Resistor layout structure

Abstract

The invention provides a resistor layout structure. The resistor layout structure comprises a film resistor, the film resistor comprises a resistor body and protruding parts located at the two ends of the resistor body, the resistor body extends in the first direction, the protruding parts are located at the two ends of the resistor body in the first direction, in the second direction, the width of the protruding parts is larger than that of the resistor body, and the width of the protruding parts is larger than that of the resistor body. An included angle is formed between the second direction and the first direction so as to uniformize the resistance value of the thin-film resistor; and the contact structure is positioned in the protruding part. According to the technical scheme, the two ends of the thin-film resistor are enlarged, the thin-film resistor is designed to be in a bone shape, the non-uniform current error of the thin-film resistor is reduced, the non-uniform effect of the current is weakened, compared with a common thin-film resistor, the thin-film resistor of the resistor layout structure is higher in charging speed and larger in current, and the charging speed is improved by about 10% on the whole.

Description

Technical Field

[0001] The present invention relates to the field of semiconductors, and in particular to a resistor pattern structure. Background Art

[0002] The general thin film resistor layout includes a rectangular resistor and a contact structure located inside the rectangular resistor. The low-resistance contact structure material can short-circuit it with the material below to form a whole, so that the current flows out from the edge of the contact structure to one side of the rectangular resistor area. As the size of semiconductors continues to shrink, the contact structure cannot be smoothly placed inside the resistor when the width of the rectangular resistor is very small.

[0003] Therefore, how to improve the thin-film resistor layout so that the contact structure can be smoothly placed inside the resistor is a problem that needs to be solved at present. Summary of the invention

[0004] The technical problem to be solved by the present invention is how to improve the thin film resistor layout so that the contact structure can be smoothly placed inside the resistor, and provide a resistor layout structure.

[0005] In order to solve the above problems, the present invention provides a resistor pattern structure, including: a thin film resistor, including a resistor body and protrusions located at both ends of the resistor body, the resistor body extends along a first direction, the protrusions are located at both ends of the resistor body along the first direction, and in the second direction, the width of the protrusions is greater than the width of the resistor body to uniformly distribute the resistance of the thin film resistor, and the second direction forms an angle with the first direction; a contact structure is located in the protrusion.

[0006] In some embodiments, there are a plurality of thin film resistors, and the plurality of thin film resistors are arranged along the second direction.

[0007] In some embodiments, the plurality of thin film resistors are arranged in a staggered manner along the second direction.

[0008] In some embodiments, the resistor body and the protrusion form a bone shape.

[0009] In some embodiments, in the first direction, the length of the resistor body is greater than the length of the protrusion.

[0010] In some embodiments, the resistor body is rectangular in shape.

[0011] In some embodiments, the contact structure and the protrusion are both rectangular in shape, or the contact structure and the protrusion are both circular in shape.

[0012] In some embodiments, a substrate is further included, and the thin film resistor and the contact structure are located on a surface of the substrate.

[0013] In some embodiments, the material of the contact structure is tungsten.

[0014] In some embodiments, the thickness of the thin film resistor is less than or equal to 40 nm.

[0015] The above technical solution increases the ends of the resistor by designing the two ends of the resistor into a dog bone shape, thereby reducing the non-uniform current error of the resistor and weakening the non-uniform effect of the current. It can also further optimize the design into a staggered matching layout composition to save layout space. The thin film resistor with a resistor layout structure provided by the present invention can charge faster and with a larger current than ordinary thin film resistors, which is an overall improvement of about 10%. Based on this, for the passive device of the thin film resistor, the non-uniform effect of the current can be better reduced, the non-uniform current error of the resistor can be reduced, the application range of the thin film resistor can be increased, and the desired thin film resistor finally obtained is less affected by the process during the manufacturing process, thereby improving the accuracy and reliability of the thin film resistor.

[0016] It should be understood that the above general description and the detailed description below are exemplary and explanatory only and cannot limit the present invention. The techniques, methods and devices known to ordinary technicians in the relevant field may not be discussed in detail, but where appropriate, the techniques, methods and devices should be considered as part of the authorization specification. BRIEF DESCRIPTION OF THE DRAWINGS

[0017] In order to more clearly illustrate the technical solutions in the specific embodiments of the present invention, the following is a brief introduction to the drawings required for the description of the specific embodiments. Obviously, the drawings described below are only some specific embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without creative work.

[0018] Figure 1 The figure is a schematic diagram of the structure of a thin film resistor layout in the prior art.

[0019] Figure 2 It is a structural schematic diagram of the first embodiment of the resistor pattern structure of the present invention.

[0020] Figure 3 It is a structural schematic diagram of the second embodiment of the resistor pattern structure of the present invention.

[0021] Figure 4 It is a structural schematic diagram of the third embodiment of the resistor pattern structure of the present invention.

[0022] Figure 5 A resistance-capacitance circuit simulation curve diagram of an embodiment of the resistance pattern structure of the present invention. DETAILED DESCRIPTION

[0023] The technical solutions in the embodiments of the present invention will be described clearly and completely below in conjunction with the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without creative work are within the scope of protection of the present invention.

[0024] See also Figure 1 , which is a schematic diagram of the structure of a thin film resistor layout in the prior art. Figure 1 As shown, the thin film resistor layout includes a plurality of rectangular resistors 11 extending along a first direction D1 and arranged along a second direction D2, and two contact structures 12 located in each of the rectangular resistors 11, and the two contact structures 12 in each of the rectangular resistors 11 are respectively located at two edges of the rectangular resistor 11 along the first direction D1. The first direction D1 is perpendicular to the second direction D2.

[0025] The current flows out from the inner edge of the contact structure 12 toward one side of the rectangular resistor 11. The approximate resistance value can be obtained by the following formula:

[0026] R=R s (L / W)

[0027] Where R is the resistance value, R s is the sheet resistance (resistivity*thickness), L is the length of the rectangular resistor, and W is the width of the rectangular resistor. However, there are many factors affecting the actual resistance value, such as photolithography, corrosion, etc. causing the oxide layer window to shrink or expand, lateral diffusion causing the resistor to become wider, resulting in a decrease in resistance value, and the current non-uniformity near the contact structure 12 causing the resistance value to increase. Under these factors, the above formula cannot be used for calculation.

[0028] Therefore, the resistance formula is corrected based on the factors related to the width. The resistance formula can be rewritten as follows

[0029] R=R s (L1 / (W1+W2))

[0030] Where R is the resistance value, R s is the sheet resistance (resistivity*thickness), L1 is the length of the rectangular resistor, W1 is the width of the rectangular resistor, and W2 is the difference between the width of the rectangular resistor and the effective width. For a given diffusion, W2 can be obtained by experimental measurement. However, for a very small resistor width, the contact structure cannot be smoothly placed inside the resistor without violating the design rules.

[0031] To solve the above problems, the present invention provides a resistor layout structure, which reduces the current unevenness effect by increasing the two ends of the resistor, and solves the problem that the resistor width is small and the contact structure cannot be smoothly placed inside the resistor.

[0032] See also Figure 2 to Figure 4 ,in, Figure 2 It is a structural schematic diagram of a first embodiment of the resistor pattern structure of the present invention; Figure 3 It is a structural schematic diagram of a second embodiment of the resistor pattern structure of the present invention; Figure 4 FIG. 1 is a schematic diagram of the structure of the third embodiment of the resistor pattern structure of the present invention. Figure 2 As shown, the resistor layout structure includes: a thin film resistor 21 and a contact structure 22. The thin film resistor 21 includes a resistor body 211 and protrusions 212 located at both ends of the resistor body 211. The resistor body 211 extends along a first direction D1. The protrusions 212 are located at both ends of the resistor body 211 along the first direction D1. In the second direction D2, the width W2 of the protrusion 212 is greater than the width W1 of the resistor body 211 to uniformly increase the resistance of the thin film resistor 21. The second direction D2 forms an angle with the first direction D1. The contact structure 22 is located in the protrusion 212.

[0033] The above technical solution enlarges the two ends of the thin film resistor and designs the thin film resistor into a bone shape (Dog-Bone), so as to reduce the non-uniform current error of the thin film resistor and weaken the non-uniform effect of the current. The thin film resistor with the resistor pattern structure described in the present invention can charge faster and with a larger current than ordinary thin film resistors, which is an overall improvement of about 10%.

[0034] In this embodiment, the second direction D2 is perpendicular to the first direction D1.

[0035] In some embodiments, there are a plurality of thin film resistors 21 , and the plurality of thin film resistors 21 are arranged along the second direction D2 .

[0036] Figure 2 The thin film resistors 21 shown in the figure are evenly arranged along the second direction D2, and the protrusions 212 of the thin film resistors 21 are also evenly arranged along the second direction D2. Since the ends of the thin film resistors 21 of the resistor layout structure of the present invention are wider than those of conventional thin film resistors, the evenly arranged thin film resistors 21 will occupy a larger layout space, resulting in space waste. Therefore, the present invention also provides a second embodiment of the resistor layout structure, as shown in FIG. Figure 3As shown, the plurality of thin film resistors 31 are arranged in a staggered manner along the second direction D2. The protrusions 312 of two adjacent thin film resistors 31 are arranged in a staggered manner along the second direction D2, and the design is further optimized to form a mismatched layout to save space.

[0037] In some embodiments, the resistor body 211 and the protrusion 212 form a bone shape. Designing the thin film resistor 21 to be bone-shaped can reduce the non-uniform current error of the thin film resistor 21 and weaken the non-uniform effect of the current.

[0038] Please continue reading Figure 2 In some embodiments, in the first direction D1, the length L1 of the resistor body 211 is greater than the length L2 of the protrusion 212 .

[0039] In some embodiments, the resistor body 211 is rectangular in shape.

[0040] In some embodiments, the contact structure 22 and the protrusion 212 are both rectangular in shape. In this embodiment, the contact structure 22 and the protrusion 212 have the same shape, and the contact structure 22 is located at the center of the protrusion 212, so that the resistance of each part of the protrusion 212 is equal, thereby improving the uniformity of the resistance value of the thin film resistor 21.

[0041] like Figure 4 As shown, in some embodiments, the contact structure 42 and the protrusion 412 are both circular in shape. In this embodiment, the contact structure 42 and the protrusion 412 have the same shape, and the contact structure 42 is located at the center of the protrusion 412, so that the resistance of each part of the protrusion 412 is equal, thereby improving the uniformity of the resistance value of the thin film resistor 41.

[0042] Please continue reading Figure 2In some embodiments, the substrate 20 is further included, and the thin film resistor 21 and the contact structure 22 are located on the surface of the substrate 20. In some embodiments, the substrate 20 can be at least one of the following materials: single crystal silicon (Si), single crystal germanium (Ge), silicon germanium (GeSi), silicon carbide (SiC), silicon germanium carbon (SiGeC), diamond, indium arsenide (InAs), gallium arsenide (GaAs), gallium nitride (GaN), indium phosphide (InP) or other III / V compound semiconductors, and also includes a multilayer structure composed of these semiconductors, or silicon on insulator (SOI), stacked silicon on insulator (SSOI), stacked silicon germanium on insulator (S-SiGeOI), silicon germanium on insulator (SiGeOI) and germanium on insulator (GeOI). An isolation structure can be formed in the substrate 20, and various doping regions and active regions configured according to actual design requirements in the field can also be included. In this embodiment, the substrate 20 is single crystal silicon.

[0043] In some embodiments, the material of the contact structure 22 is tungsten. In other embodiments, the material of the contact structure 22 may also be titanium nitride, metal silicide, copper, and copper-tungsten alloy.

[0044] In some embodiments, the material of the thin film resistor 21 may be a high-K material or silicon oxide, or a composite layer of a high-K material, or a composite layer of a high-K material and silicon oxide.

[0045] In some embodiments, the thickness of the thin film resistor 21 is less than or equal to 40 nm. In this embodiment, the thickness of the thin film resistor 21 is 40 nm. In other embodiments, the thickness of the thin film resistor 21 may also be 15 nm, 20 nm, or 30 nm.

[0046] In the present invention, based on the existing process platform, resistance-capacitance circuit (RC) simulation is performed on general thin film resistors and thin film resistors with the resistor layout structure described in the present invention. Figure 5 , which is a resistance-capacitance circuit simulation curve diagram of an embodiment of the resistance pattern structure of the present invention, wherein the horizontal axis is time t and the vertical axis is capacitor voltage V c ; Reference numeral 51 is a curve corresponding to the thin film resistor of the resistor pattern structure of the present invention, and reference numeral 52 is a curve corresponding to a general thin film resistor. By comparing and analyzing the leakage performance, it is found that the fitting of the curve graph roughly conforms to the differential equation formula of Kirchhoff's circuit law:

[0047] V c (t) = V(1-e -t / RC )

[0048] Among them, V cis the capacitor voltage, V is the charging voltage, t is the time, and RC is a constant. That is, when t is exactly equal to RC, the capacitor voltage V c =V(1-e -1 )=63.2%V. When the charging time is exactly RC seconds, the voltage across the capacitor is almost equal to 63.2% of the charging voltage V.

[0049] Comparing the RC simulation curves of general thin-film resistors and bone-shaped thin-film resistors, there is a deviation in the slope of the two, and there is a difference in the time it takes to reach a stable voltage. Based on process data and simulation, it is found that bone-shaped thin-film resistors can charge faster and with a larger current than general thin-film resistors, which is an overall improvement of about 10%. For process platforms below 40nm, the performance can be further improved to 12%-18% through layout optimization and adjustment, which can greatly expand the scope of application and bring more economic benefits.

[0050] The present invention discloses a design and layout of a resistor layout structure, which increases the two ends of the resistor by designing the two ends of the resistor into a bone shape, thereby reducing the non-uniform current error of the resistor and weakening the non-uniform effect of the current, and can also further optimize the design into a staggered matching layout composition to save layout space. The thin-film resistor of the resistor layout structure provided by the present invention can charge faster and with a larger current than a general thin-film resistor, which is an overall improvement of about 10%. Based on this, for the passive device of the thin-film resistor, the non-uniform effect of the current can be better reduced, the non-uniform current error of the resistor can be reduced, the application range of the thin-film resistor can be increased, and the desired thin-film resistor finally obtained is less affected by the process during the manufacturing process, thereby improving the accuracy and reliability of the thin-film resistor.

[0051] It should be noted that references in the specification to "an embodiment", "an embodiment", "an exemplary embodiment", "some embodiments", etc. indicate that the described embodiment may include a particular feature, structure, or characteristic, but every embodiment may not necessarily include the particular feature, structure, or characteristic. Moreover, such phrases do not necessarily refer to the same embodiment. In addition, when a particular feature, structure, or characteristic is described in conjunction with an embodiment, whether or not explicitly described, it is within the knowledge of a technician in the relevant art to implement such feature, structure, or characteristic in conjunction with other embodiments.

[0052] Typically, a term can be understood at least in part from usage in context. For example, the term "one or more" as used herein depends at least in part on the context and can be used to describe any feature, structure or characteristic in a singular sense, or can be used to describe a combination of features, structures or features in a plural sense. Similarly, terms such as "one", "a" or "the" can also be understood to express singular usage or to express plural usage, depending at least in part on the context. In addition, the term "based on" can be understood to not necessarily be intended to express a set of exclusive factors, but can alternatively, also at least in part depending on the context, allow for the presence of other factors that are not necessarily explicitly described. It should also be noted in this specification that "connected / coupled" refers not only to the direct coupling of one component to another component, but also to the indirect coupling of one component to another component through an intermediate component.

[0053] It should be noted that the terms "including" and "having" and their variations involved in the documents of the present invention are intended to cover non-exclusive inclusions. The terms "first", "second", etc. are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. Unless the context clearly indicates otherwise, it should be understood that the data used in this way can be interchanged under appropriate circumstances. In addition, the embodiments of the present invention and the features in the embodiments can be combined with each other unless there is a conflict. In addition, in the above description, the description of well-known components and technologies is omitted to avoid unnecessary confusion of the concepts of the present invention. In the above embodiments, each embodiment focuses on the differences from other embodiments, and the same / similar parts between the embodiments can be referred to each other.

[0054] The above is only a preferred embodiment of the present invention. It should be pointed out that ordinary technicians in this technical field can make several improvements and modifications without departing from the principle of the present invention. These improvements and modifications should also be regarded as the scope of protection of the present invention.

Claims

1. A resistor pattern structure, characterized in that: include: A thin film resistor, comprising a resistor body and protrusions located at two ends of the resistor body, wherein the resistor body extends along a first direction, the protrusions are located at two ends of the resistor body along the first direction, and in a second direction, the width of the protrusions is greater than the width of the resistor body to make the resistance value of the thin film resistor uniform, and the second direction forms an angle with the first direction; The contact structure is located in the protrusion.

2. The resistor pattern structure according to claim 1, characterized in that: There are a plurality of thin film resistors, and the plurality of thin film resistors are arranged along the second direction.

3. The resistor pattern structure according to claim 2, characterized in that: The plurality of thin film resistors are arranged in a staggered manner along the second direction.

4. The resistor pattern structure according to claim 1, characterized in that: The resistor body and the protrusion form a bone shape.

5. The resistor pattern structure according to claim 1, characterized in that: In the first direction, the length of the resistor body is greater than the length of the protrusion.

6. The resistor pattern structure according to claim 1, characterized in that: The resistor body is in a rectangular shape.

7. The resistor pattern structure according to claim 1, characterized in that: The contact structure and the protrusion are both rectangular in shape, or the contact structure and the protrusion are both circular in shape.

8. The resistor pattern structure according to claim 1, characterized in that: It also includes a substrate, and the thin film resistor and the contact structure are located on the surface of the substrate.

9. The resistor pattern structure according to claim 1, characterized in that: The material of the contact structure is tungsten.

10. The resistor pattern structure according to claim 1, characterized in that: The thickness of the thin film resistor is less than or equal to 40 nm.

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