Spin light emitting diode based on low-dimensional material and heterostructure and manufacturing method thereof

Abstract

The invention discloses a structure of a spin light emitting diode (SPIN LED) based on a chromium triiodide (CrI3) and fluorinated yttrium carbide (Y2CF2) heterostructure and a manufacturing method of the SPIN LED. The spin light emitting diode is composed of a heterostructure made of CrI3 and Y2CF2 materials and a substrate of the heterostructure, the substrate of the CrI3 is indium (In) or gold (Au), and the substrate of the Y2CF2 is silicon dioxide (SiO2). According to the invention, a low-dimensional material and a heterostructure thereof are adopted, and the light-emitting frequency interval of the Spin LED can be effectively adjusted, so that the application range of the Spin LED in the fields of optical communication, quantum calculation, display technology and the like is expanded. Compared with the prior art, the device has the remarkable advantages of low power consumption, high luminous efficiency, adjustable spectral response range, long service life and the like.

Description

Technical Field

[0001] The invention belongs to the field of optoelectronic devices, and in particular relates to a spin electronic device based on low-dimensional materials and heterostructures. Background Art

[0002] A light-emitting diode (LED) is a semiconductor device that, when a forward voltage is applied to it, electrons and holes recombine, releasing energy and emitting light in the form of photons. The color of the light is determined by the band gap of the semiconductor material. The birth of light-emitting diodes has promoted the innovation of lighting, display and electronic technologies, and promoted the development of energy conservation and environmental protection.

[0003] The working principle of spin light emitting diode (Spin LED) is based on spin electronics, which injects spin-polarized electrons or holes into the light-emitting area of ​​the semiconductor. When these spin-carrying carriers recombine with the electrons or holes in the light-emitting area, according to the optical selection rule, circularly polarized light with a specific polarization state (left-handed or right-handed) is emitted.

[0004] Spin LED controls the polarization state of light by adjusting the spin polarization rate, and can combine low-dimensional materials and heterostructures to regulate the luminescence properties, expanding its application in optical communications, spin electronics and quantum computing. Compared with traditional LEDs, it is more diversified in functionality and application areas.

[0005] However, existing spin light-emitting diodes mainly rely on traditional three-dimensional materials, which have certain limitations in adjusting the luminescence frequency and improving device performance. The band structure of three-dimensional materials is relatively fixed and difficult to effectively regulate through external conditions, resulting in limited luminescence efficiency of the device in a specific frequency band. Low-dimensional materials (such as two-dimensional materials, quantum dots, etc.) have significant advantages over three-dimensional materials due to their special band structure. The band gap of low-dimensional materials can be finely regulated by a variety of factors, such as changes in the number of layers, the type of material, the application of stress, and the influence of external electric or magnetic fields. This regulatory characteristic makes low-dimensional materials particularly suitable for designing tunable light-emitting devices in the optoelectronic field. The luminescence frequency is directly related to the energy released when electron-hole pairs recombine (i.e., the band gap). Therefore, by adjusting the energy band of low-dimensional materials, effective control of the luminescence frequency can be achieved and the application band of the device can be expanded. Summary of the invention

[0006] In view of this, the present invention aims to propose a spin light emitting diode (SPIN LED) structure based on a heterostructure of chromium triiodide (CrI3) and fluorinated yttrium carbide (Y2CF2), which combines the unique properties of low-dimensional materials and can improve the efficiency and performance of optoelectronic devices. The SPIN LED of the present invention is mainly composed of a heterostructure composed of CrI3 and Y2CF2 materials, and utilizes the band regulation characteristics of CrI3 and Y2CF2 as low-dimensional materials to effectively broaden the adjustable range of luminous frequency.

[0007] In order to solve the above technical problems, the present invention provides the following technical solutions.

[0008] The present invention provides a spin light-emitting diode structure based on a heterostructure of chromium triiodide (CrI3) and fluorinated yttrium carbide (Y2CF2), comprising a heterojunction upper material layer (1), a heterojunction lower material layer (2), a substrate (3) carrying the heterojunction upper material layer, and a substrate (4) carrying the heterojunction lower material layer.

[0009] Specifically, the spin light emitting diode includes a heterojunction composed of chromium triiodide (CrI3) and fluorinated yttrium carbide (Y2CF2), wherein the substrate material of the chromium triiodide is indium (In) or gold (Au), and the substrate material of the fluorinated yttrium carbide is silicon dioxide (SiO2).

[0010] As a preferred solution, the heterojunction upper material layer (1) and the heterojunction lower material layer (2) are combined into a group of heterostructures, which mainly serve as the carrier recombination light-emitting region (active region) of the spin light-emitting diode.

[0011] As a preferred solution, through etching and other processes, slots for placing the heterostructure are respectively reserved on the substrates carrying the upper and lower materials of the heterojunction. A layer of the low-dimensional material is respectively deposited on the slots of the substrate (3) (4) by chemical vapor deposition or mechanical stripping to form the heterojunction.

[0012] One or more technical solutions provided in the present invention have at least the following technical effects or advantages.

[0013] The present invention can adjust different luminous frequencies by adjusting the number of layers, stress, electric field and other physical parameters of chromium triiodide (CrI3) and fluorinated yttrium carbide (Y2CF2), thereby expanding the application range of spin light-emitting diodes in different optical applications.

[0014] Due to the high-efficiency electron-hole recombination characteristics and good spin injection efficiency of the low-dimensional material, the spin light-emitting diode of the present invention has higher photoelectric conversion efficiency.

[0015] The low-dimensional heterostructure of chromium triiodide (CrI3) and fluorinated yttrium carbide (Y2CF2) materials proposed in the present invention exhibits lower energy loss in the device, thereby effectively reducing the power consumption of the device and extending its service life.

[0016] The spin light-emitting diode proposed in the present invention can utilize advanced microelectronic process technology, integrate spin electronic devices and optoelectronic devices, and develop new optical devices; and ultimately can be applied to multiple advanced fields such as optical communication, quantum information processing, and display technology.

[0017] In order to fully understand the purpose, features and effects of the present invention, the concept, specific structure and technical effects of the present invention will be further described below with reference to the accompanying drawings. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] The accompanying drawings are used to provide further understanding of the present invention and constitute a part of the specification. They are used to explain the present invention together with the embodiments of the present invention and do not constitute a limitation of the present invention.

[0019] Figure 1 Schematic diagram of the structure of chromium triiodide (CrI3) on the heterojunction material layer in an embodiment of the present invention.

[0020] Figure 2 It is a schematic diagram of the structure of fluorinated yttrium carbide (Y2CF2) in the heterojunction lower material layer in an embodiment of the present invention.

[0021] Figure 3 It is a schematic diagram of the CrI3 / Y2CF2 heterostructure in an embodiment of the present invention.

[0022] Figure 4 Schematic diagram of the structure of a spin light emitting diode device in an embodiment of the present invention.

[0023] Numbers in the figure: 1. Chromium triiodide (CrI3) material layer on the heterojunction; 2. Fluorinated yttrium carbide (Y2CF2) material layer on the heterojunction; 3. Indium (In) / gold (Au) substrate; 4. Silicon dioxide (SiO2) substrate. DETAILED DESCRIPTION

[0024] In order to make the purpose, technical solution and advantages of the present invention more clearly understood, the present invention is further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not used to limit the present invention.

[0025] Example:

[0026] See also Figure 2, through the first principles method, the intrinsic structural properties of electronic crystal materials were studied, and the rationality and stability of their structure were verified through other methods such as phonon mapping.

[0027] See also Figure 3 , explored the structural stability of the electronic crystal material / chromium triiodide heterojunction, and found that the electronic crystal material / chromium triiodide heterojunction can exist stably. In this way, the transfer of electrons from the electronic crystal material to chromium triiodide can be completed.

[0028] See also Figure 4 A spin light-emitting diode provided by an embodiment of the present invention comprises a heterojunction upper material layer (1), a heterojunction lower material layer (2), a substrate (3) carrying the heterojunction upper material layer, and a substrate (4) carrying the heterojunction lower material layer. The substrates (3) and (4) carrying the heterojunction material layers are mainly used as substrates of the spin light-emitting diode. Then, through etching and other processes, a slot for placing the heterojunction is reserved on the substrate. Subsequently, the heterojunctions composed of (1) and (2) are respectively deposited on the substrate (3) (4) and the formed slot by chemical vapor deposition or mechanical stripping, and then the electronic crystal material of a specific size is retained by etching and other processes.

[0029] The working principle of the spin light emitting diode proposed by the present invention is as follows:

[0030] Through the spin injection device, spin-polarized electrons or holes are injected into the active area of ​​the light-emitting diode. The electrons and holes recombine in the active area, and according to the optical selection rule, left-handed or right-handed circularly polarized light is generated. The polarizability of the circularly polarized light is directly related to the polarizability of the injected spin-polarized carriers, so that the polarization characteristics of the circularly polarized light can be precisely controlled. By adjusting the number of material layers of CrI3 and Y2CF2, stress, and external conditions such as an applied electric field or magnetic field, the energy band gap of the device can be effectively regulated, thereby adjusting the emission frequency.

[0031] Although the preferred embodiments of the present invention have been described, those skilled in the art may make other changes and modifications to these embodiments once they have learned the basic creative concept. Therefore, the appended claims are intended to be interpreted as including the preferred embodiments and all changes and modifications that fall within the scope of the present invention.

[0032] The above descriptions are merely embodiments of the present invention and are not intended to limit the patent scope of the present invention. Any equivalent structure or equivalent process transformation made using the contents of the present invention specification and drawings, or directly or indirectly applied in other related technical fields, are also included in the patent protection scope of the present invention.

Claims

1. A spin light emitting diode based on a heterostructure of chromium triiodide (CrI3) and fluorinated yttrium carbide (Y2CF2), characterized in that: The invention comprises the following components: an upper heterojunction material layer, which is composed of chromium triiodide (CrI3); a lower heterojunction material layer, which is composed of fluorinated yttrium carbide (Y2CF2); a substrate carrying the upper heterojunction material layer, which is made of indium (In) or gold (Au); a substrate carrying the lower heterojunction material layer, which is made of silicon dioxide (SiO2); the heterostructure is a carrier recombination luminescent zone, which generates left-handed or right-handed circularly polarized light by injecting spin-polarized electrons or holes.

2. The spin light emitting diode according to claim 1, characterized in that: The adjustment of the number of layers, stress, electric field or magnetic field of CrI3 and Y2CF2 can regulate the energy band gap of the device, thereby adjusting the light emission frequency of the spin light-emitting diode.

3. The spin light emitting diode according to claim 1, characterized in that: A card groove is formed on the substrate through an etching process, and the heterogeneous structure is deposited in the card groove through a chemical vapor deposition or mechanical stripping method.

4. The spin light emitting diode according to any one of claims 1 to 3, characterized in that: Spin-polarized electrons or holes are injected into the active region by a spin injection device, and the polarization characteristics of the emitted circularly polarized light are controlled by an optical selection rule.

5. A method for manufacturing a spin light emitting diode based on a CrI3 and Y2CF2 heterostructure, characterized in that: CrI3 material is deposited on an indium (In) or gold (Au) substrate to form a heterojunction upper material layer.

6. A method for manufacturing a spin light emitting diode based on a CrI3 and Y2CF2 heterostructure, characterized in that: Y2CF2 material is deposited on a silicon dioxide (SiO2) substrate to form a heterojunction lower material layer.

7. A method for manufacturing a spin light emitting diode based on a CrI3 and Y2CF2 heterostructure, characterized in that: Using a spin injection device, spin-polarized carriers are injected into the carrier recombination luminescent region composed of CrI3 and Y2CF2 to generate circularly polarized light.

8. The manufacturing method according to claim 5, characterized in that: By adjusting the number of layers, stress and external electric or magnetic field of CrI3 and Y2CF2, the luminous frequency and photoelectric conversion efficiency of the spin light-emitting diode can be controlled.

9. The spin light emitting diode according to claim 1, characterized in that: By adjusting the number of layers, stress, electric field and other physical parameters of CrI3 and Y2CF2, the different luminous frequencies of the light-emitting diode can be adjusted, expanding the scope of application of spin light-emitting diodes in different optical applications.

10. The spin light emitting diode according to claim 1, characterized in that: The low-dimensional heterostructure of chromium triiodide (CrI3) and fluorinated yttrium carbide (Y2CF2) materials proposed in the present invention exhibits lower energy loss in the device, thereby effectively reducing the power consumption of the device and extending its service life.

11. The spin light emitting diode according to claim 1, characterized in that: Due to the efficient electron-hole recombination characteristics and good spin injection efficiency of low-dimensional materials, the spin light-emitting diode has higher photoelectric conversion efficiency.

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