Semiconductor light emitting device and display device

Abstract

A semiconductor light emitting device includes: a light emitting layer; a first electrode on a lower side of the light emitting layer; a second electrode on an upper side of the light emitting layer; an insulating layer on a side portion of the light emitting layer and overlapping with at least a portion of the first electrode and overlapping with at least a portion of the second electrode; and a plurality of metal layers spaced apart from each other in the insulating layer, the plurality of metal layers including a first metal layer including a reflective layer and a second metal layer including a magnetic layer.

Description

Technical Field

[0001] Embodiments relate to a semiconductor light emitting device and a display apparatus. Background Art

[0002] A large area display includes a liquid crystal display (LCD), an organic light emitting diode (OLED) display, and a micro light emitting diode display. A micro light emitting diode display is a display that uses a micro light emitting diode (i.e., a semiconductor light emitting device with a diameter or cross-sectional area of ​​100 μm or less) as a display element.

[0003] Since the micro-LED display uses micro-light-emitting diodes (e.g., micro-LEDs) as display elements, it has excellent performance in many characteristics (e.g., contrast, response speed, color gamut, viewing angle, brightness, resolution, life, lighting efficiency, brightness, etc.). In particular, since the screen can be separated or combined in a modular manner, the micro-LED display has the advantage of being able to freely adjust the size and resolution and achieve flexible display. However, since large-scale micro-LED displays require more than millions of micro-LEDs, there is a technical problem that it is difficult to quickly and accurately transfer the micro-LEDs to the display panel.

[0004] Recently developed transfer technologies include pick-and-place process, laser lift-off method or self-assembly method. Among these transfer technologies, the self-assembly method is a method in which a semiconductor light-emitting device automatically moves to its assembly position in a fluid, which is beneficial for the manufacture of large-screen display devices. However, the technology of manufacturing displays by self-assembling micro-light-emitting diodes is still insufficient.

[0005] In the self-assembly method, many micro-LEDs must be moved to the desired position in the fluid accurately and quickly, and assembled at the desired position on the substrate accurately and quickly. To this end, the self-assembly method uses a magnetic field and an electric field. That is, a magnet that generates a magnetic field is used to move the micro-LEDs to the desired position in the fluid, and the corresponding micro-LEDs are assembled on the substrate by an electric field. The electric field is generated by a voltage applied to the assembly wiring provided on the substrate.

[0006] In order to move the micro LED by the magnet, the micro LED is provided with a magnetic layer. The magnetic layer is provided on the lower side of the micro LED. Figure 1As shown, when the magnetic layer is disposed on the lower side of the micro-light emitting diodes (1, 2), an agglomeration phenomenon (agglomeration phenomenon) occurs, in which adjacent micro-light emitting diodes 1 and 2 whose magnetic layers face each other adhere to each other. The agglomeration phenomenon refers to the phenomenon in which a plurality of micro-light emitting diodes 1 and 2 adhere to each other (e.g., are magnetically attracted / magnetically attached to each other). The smaller the size of the micro-light emitting diode, the larger the contact area of ​​the magnetic layers of adjacent micro-light emitting diodes 1 and 2, and the stronger the bonding force between the micro-light emitting diodes, which is undesirable because it can cause the interconnected micro-light emitting diodes 1 and 2 to be improperly assembled or unable to be assembled. Many micro-light emitting diodes 1 and 2 are attracted by the magnet, so that the distance between the micro-light emitting diodes becomes smaller. Therefore, due to the magnetic layer of each adjacent micro-light emitting diode 1 and 2, the micro-light emitting diodes 1 and 2 adhere to each other, and an agglomeration phenomenon occurs.

[0007] The aggregation phenomenon reduces the assembly speed, assembly yield, luminous efficiency and other factors. The problem with the combination of multiple micro-light emitting diodes 1 and 2 attached to each other is that the assembly speed on the substrate is reduced due to the increase in weight, which reduces the moving speed. In addition, even if a combination of several connected micro-light emitting diodes 1 and 2 is assembled in the assembly hole on the substrate, there is a problem of assembly defects due to separation from the assembly hole. In addition, even if the combination of several connected micro-light emitting diodes 1 and 2 assembled in the assembly hole on the substrate does not fall off (for example, it is not disassembled), when the electrical connection is made in the subsequent process, the problem of luminous defects will occur due to electrical connection defects. Therefore, in order to increase the assembly speed and improve the assembly yield or luminous efficiency, the most urgent solution of the present invention is to prevent the aggregation phenomenon that occurs when the micro-light emitting diodes 1 and 2 move in the fluid. Summary of the invention

[0008] An object of an embodiment is to solve the above and other problems. Another object of an embodiment is to provide a semiconductor light emitting device capable of preventing agglomeration. Furthermore, another object of an embodiment is to provide a semiconductor light emitting device capable of increasing assembly speed. Furthermore, another object of an embodiment is to provide a semiconductor light emitting device capable of increasing assembly yield or luminous efficiency. Furthermore, another object of an embodiment is to provide a semiconductor light emitting device and a display device capable of increasing brightness. The technical problems of the embodiments are not limited to the technical problems described in this section, and include technical problems that can be understood through the description of the present invention.

[0009] According to one aspect of the embodiment, in order to achieve the above or other purposes, a semiconductor light emitting device includes: a light emitting layer; a first electrode located at the lower side of the light emitting layer; a second electrode located at the upper side of the light emitting layer; an insulating layer located on the side portion of the light emitting layer; and a plurality of metal layers spaced apart from each other in the insulating layer. The light emitting layer may include at least one or more first conductive type semiconductor layers, an active layer on the first conductive type semiconductor layer, and at least one or more second conductive type semiconductor layers on the active layer.

[0010] The plurality of metal layers may include at least one or more first metal layers, and at least one or more second metal layers spaced outwardly from the first metal layers. The insulating layer may include a first insulating layer between the light emitting layer and the first metal layer, a second insulating layer between the first metal layer and the second metal layer, and a third insulating layer on an outer surface of the second metal layer.

[0011] A portion of the third insulating layer may overlap with the upper side of the light emitting layer in a vertical direction. The plurality of metal layers may include at least one or more third metal layers spaced outwardly from the second metal layer. The first metal layer may include a reflective layer, the second metal layer may include a magnetic layer, and the third metal layer may include a reflective layer. The upper side of at least one or more of the first metal layer, the second metal layer, and the third metal layer may be flush with the upper surface of the second electrode.

[0012] The upper side of at least one or more of the first metal layer, the second metal layer and the third metal layer may be higher than the upper surface of the second conductive semiconductor layer. The upper side of at least one or more of the first metal layer, the second metal layer and the third metal layer may contact the third insulating layer.

[0013] The insulating layer may include a fourth insulating layer between the second metal layer and the third metal layer. The upper side of at least one or more layers of the first insulating layer, the second insulating layer, and the fourth insulating layer may be in contact with the third insulating layer. The edge region of the first electrode may be separated from the first metal layer, the second metal layer, and the third metal layer by a space, and a space may be formed between the lower sides of at least two or more layers of the first insulating layer, the second insulating layer, the third insulating layer, and the fourth insulating layer.

[0014] The edge region of the first electrode may be separated from the first metal layer by a first insulating layer therebetween. The plurality of metal layers may include at least one or more fourth metal layers spaced inwardly from the first metal layer. The fourth metal layer may be disposed between the light emitting layer and the first insulating layer. The fourth metal layer may include an ohmic layer. The upper side of the fourth metal layer may be lower than the active layer.

[0015] The edge region of the first electrode may be electrically connected to at least one or more of the first metal layer, the second metal layer, the third metal layer, and the fourth metal layer. The plurality of metal layers may each have a columnar structure.

[0016] According to another aspect of the embodiment, a display device includes: a substrate, including a plurality of sub-pixels constituting a pixel; and a plurality of semiconductor light-emitting devices, located in the plurality of sub-pixels, wherein the semiconductor light-emitting device includes a light-emitting layer, a first electrode located at the lower side of the light-emitting layer, a second electrode located at the upper side of the light-emitting layer, an insulating layer on a side portion of the light-emitting layer, and a plurality of metal layers spaced apart from each other in the insulating layer.

[0017] This embodiment can prevent the aggregation phenomenon. Figure 8 , Fig.13 , Fig.15 , Fig.17 and Fig.18 As shown, a plurality of metal layers 156-1 to 156-4 may be disposed on a side portion of the light emitting layer 150a, and one of the plurality of metal layers 156-1 to 156-4 may include a magnetic layer 156-2. In addition, the side surface of the light emitting layer 150a may have a rounded surface. The insulating layer 157 disposed on the side portion of the light emitting layer 150a may also have a rounded surface. Therefore, since the semiconductor light emitting devices 150A to 150E are not bonded to each other, an aggregation phenomenon can be prevented. Even if the semiconductor light emitting devices 150A to 150E are bonded by the magnetic layer 156-2 disposed on the side portion of the light emitting layer 150a, the side surface of the insulating layer 157 also has a rounded surface, so the bonded semiconductor light emitting devices 150A to 150E can be immediately separated.

[0018] This embodiment can speed up the assembly speed. As described above, since the semiconductor light emitting devices 150A to 150E are not bonded together, the semiconductor light emitting devices 150A to 150E can be individually moved to the desired position on the substrate together with the magnet. Therefore, when the semiconductor light emitting devices 150A to 150E are aggregated, the problem of slowing down the moving speed due to the increase in the weight of the semiconductor light emitting devices 150A to 150E formed by the aggregation or slowing down the assembly speed due to the magnet not moving fast or not moving at all can be solved.

[0019] This embodiment can improve the assembly yield or light output. Figures 19 to 22As shown, only one semiconductor light emitting device 150A to 150E can be assembled in the assembly hole 340H on the substrate 310. Therefore, since the semiconductor light emitting devices 150A to 150E are assembled in all the assembly holes 340H on the substrate 310 (for example, each of the semiconductor light emitting devices 150A to 150E is assembled in a corresponding one of the assembly holes 340H), the assembly yield can be improved. In addition, since only one semiconductor light emitting device 150A to 150E is assembled in each assembly hole 340H, electrical connection defects such as disconnection will not occur during the electrical connection process in the subsequent process, thereby improving the light emitting efficiency.

[0020] This embodiment can improve brightness. The reflective layer 154-1 may be included in the first electrode 154 disposed at the lower side of the light emitting layer 150a, and one of the plurality of metal layers 156-1 to 156-4 disposed at the side portion of the light emitting layer 150a may include the reflective layer 156-1. Therefore, light generated inside the light emitting layer 150a can be more easily extracted to the outside, thereby improving brightness.

[0021] The further applicable scope of the present embodiment will become apparent from the following detailed description. However, since those skilled in the art can clearly understand various changes and modifications within the spirit and scope of the embodiments, it should be understood that the detailed description and specific embodiments (such as preferred embodiments) are given as examples only. BRIEF DESCRIPTION OF THE DRAWINGS

[0022] The present invention will be more fully understood from the detailed description given below and the accompanying drawings, which are given by way of example only and thus do not limit the present invention.

[0023] Figure 1 Shown is the peeling of reflective metal from a micro-LED.

[0024] Figure 2 The living room of a house in which the display device according to the embodiment is placed is schematically shown.

[0025] Figure 3 is a block diagram schematically showing a display device according to an embodiment.

[0026] Figure 4 It is shown Figure 3 A circuit diagram of an example of a pixel.

[0027] Figure 5 yes Figure 3 An enlarged view of a first panel area in a display device.

[0028] Figure 6 yes Figure 5 Magnified view of area A2.

[0029] Figure 7 is a view showing an example in which the light emitting device according to the embodiment is assembled to a substrate through a self-assembly method.

[0030] Figure 8 is a cross-sectional view showing a semiconductor light emitting device according to a first embodiment.

[0031] Fig. 9 is a bottom view showing the semiconductor light emitting device according to the first embodiment after the first electrode is removed.

[0032] Fig.10 A state in which adjacent semiconductor light emitting devices in each of the comparative example and the embodiment are bonded together is shown.

[0033] Fig.11 The magnetic field of a magnet applied to the pillar-shaped structure of the second metal layer is shown.

[0034] Fig. 12A (a) to (d) and Fig. 12B (e) to (g) show a manufacturing process of the semiconductor light emitting device according to the first embodiment.

[0035] Fig.13 is a cross-sectional view showing a semiconductor light emitting device according to a second embodiment.

[0036] Fig.14 is a bottom view showing the semiconductor light emitting device according to the second embodiment after the first electrode is removed.

[0037] Fig.15 is a cross-sectional view showing a semiconductor light emitting device according to a third embodiment.

[0038] Fig.16 A manufacturing process of the semiconductor light emitting device according to the third embodiment is shown.

[0039] Fig.17 is a cross-sectional view showing a semiconductor light emitting device according to a fourth embodiment.

[0040] Fig.18 is a cross-sectional view showing a semiconductor light emitting device according to a fifth embodiment.

[0041] Fig.19 is a cross-sectional view showing a display device according to a first embodiment.

[0042] Fig. 20 is a cross-sectional view showing a backplane substrate according to the first embodiment.

[0043] Fig.21 is a cross-sectional view showing a display device according to a second embodiment.

[0044] Fig. 22 is a cross-sectional view showing a backplane substrate according to a second embodiment.

[0045] Fig.23 The luminance of the semiconductor light emitting devices in the display apparatuses according to the comparative example and the embodiment is shown.

[0046] The size, shape, dimensions, etc. of the elements shown in the drawings may be different from the actual ones. In addition, even if the same element is shown in different sizes, shapes, dimensions, etc. in different drawings, this is only an example of the drawings, and the same elements between the drawings should have the same size, shape, dimensions, etc. DETAILED DESCRIPTION

[0047] The present invention will now be described with reference to the drawings, wherein like reference numerals are used throughout the several views to identify the same or similar elements.

[0048] Hereinafter, the embodiments disclosed in this specification will be described in detail with reference to the accompanying drawings, but regardless of the figure numerals, the same or similar elements are given the same figure numerals, and their redundant descriptions will be omitted. In view of the convenience of writing the specification, the suffixes "module" and "unit" of the elements used in the following description are given or used interchangeably, and they themselves do not have different meanings or functions from each other. In addition, the accompanying drawings are for easy understanding of the embodiments disclosed in this specification, and the technical ideas disclosed in this specification are not limited by the accompanying drawings. In addition, when an element such as a layer, a region or a substrate is referred to as "on another element", this means that it can be directly on another element or there can be other intermediate elements between them.

[0049] The display devices described in this specification may include televisions, signboards, mobile terminals (such as handheld phones and smart phones, etc.), computer displays (such as laptops and desktop computers, etc.), car head-up displays (HUDs), backlight units of displays, XR (extended reality) such as AR, VR, MR (mixed reality), etc. However, even if new product types are developed in the future, the configurations according to the embodiments described in this specification may also be applied to these display-enabled devices.

[0050] Figure 2 1 shows a living room of a house, in which a display device according to an embodiment is arranged. Figure 2 The display device 100 of the embodiment can display the status of various electronic products (such as a washing machine 101, a robot vacuum cleaner 102, and an air purifier 103), communicate with each electronic product based on the Internet of Things, and control each electronic product based on the user's setting data.

[0051] The display device 100 according to the embodiment may include a flexible display manufactured on a thin and flexible substrate. The flexible display may be bent or rolled like paper while maintaining the characteristics of an existing flat panel display.

[0052] In a flexible display, visual information can be realized by independently controlling the light emission of unit pixels arranged in a matrix form. A unit pixel refers to the smallest unit for realizing a color. The unit pixel of a flexible display can be realized by a light-emitting device. In the present embodiment, the light-emitting device can be a micro light-emitting diode or a nano light-emitting diode (Nano-LED, such as electroluminescent quantum dots (EL-QD)), but is not limited thereto.

[0053] Figure 3 is a block diagram schematically showing a display device according to an embodiment. Figure 4 It is shown Figure 3 A circuit diagram of an example of a pixel. Figure 3 and Figure 4 , the display device according to the embodiment may include a display panel 10 , a driving circuit 20 , a scan driving circuit 30 , and a power supply circuit 50 .

[0054] The display device 100 of the present embodiment may drive the light emitting device in an active matrix (AM) scheme or a passive matrix (PM) scheme. The driving circuit 20 may include a data driving circuit 21 and a timing controller 22. The display panel 10 may be rectangular, but is not limited thereto. That is, the display panel 10 may be formed in a circular or elliptical shape. At least one side of the display panel 10 may be formed to be curved with a predetermined curvature. The display panel may include a display area DA. The display area DA is an area where pixels PX are formed to display an image. The display panel may include a non-display area (NDA). The non-display area NDA may be an area other than the display area DA.

[0055] As an example, the display area DA and the non-display area NDA may be defined on the same surface. For example, the non-display area NDA may surround the display area DA on the same side as the display area DA, but is not limited thereto. As another example, the display area DA and the non-display area NDA may be defined on different surfaces. For example, the display area DA may be defined on the upper surface of the substrate, and the non-display area NDA may be defined on the lower surface of the substrate. For example, the non-display area NDA may be defined on the entire or partial area of ​​the lower surface of the substrate.

[0056] For example, although the display area DA and the non-display area NDA are shown in the figure, they may not be divided into the display area DA and the non-display area NDA. That is, only the display area DA may exist on the upper surface of the substrate, and the non-display area NDA may not exist. In other words, the entire upper surface of the substrate may be the display area DA that displays an image, and the frame area as the non-display area NDA may not exist.

[0057] like Figure 4 As shown, the display panel 10 may include data lines (D1 to Dm, where m is an integer greater than or equal to 2), scan lines (S1 to Sn, where n is an integer greater than or equal to 2) crossing the data lines (D1 to Dm), a high potential voltage line VDDL providing a high potential voltage, a low potential voltage line VSSL providing a low potential voltage, and pixels PX connected to the data lines D1 to Dm and the scan lines S1 to Sn.

[0058] Each pixel PX may include a first sub-pixel PX1, a second sub-pixel PX2, and a third sub-pixel PX3. The first sub-pixel PX1 may emit a first color light having a first dominant wavelength, the second sub-pixel PX2 may emit a second color light having a second dominant wavelength, and the third sub-pixel PX3 may emit a third color light having a third dominant wavelength. That is, the first sub-pixel PX1, the second sub-pixel PX2, and the third sub-pixel PX3 may each emit a different color. The first color light may be red light, the second color light may be green light, and the third color light may be blue light, but are not limited thereto. In addition, in Figure 5 In FIG. 1 , it is shown that each pixel PX includes three sub-pixels, but it is not limited thereto. That is, each pixel PX may include four or more sub-pixels.

[0059] The first subpixel PX1, the second subpixel PX2, and the third subpixel PX3 may each be connected to at least one of the data lines D1 to Dm, at least one of the scan lines S1 to Sn, and the high potential voltage line VDDL. Figure 4 As shown, the first subpixel PX1 may include a light emitting device LD, a plurality of transistors for supplying current to the plurality of light emitting devices LD, and at least one capacitor Cst.

[0060] Each of the first subpixel PX1, the second subpixel PX2, and the third subpixel PX3 may include only one light emitting device LD and at least one capacitor Cst. Each light emitting device LD may be a semiconductor light emitting diode including a first electrode, a plurality of conductive semiconductor layers, and a second electrode. In this article, the first electrode may be an anode electrode, and the second electrode may be a cathode electrode, but is not limited thereto. The light emitting device LD may be one of a lateral light emitting device, a flip chip light emitting device, and a vertical light emitting device.

[0061] The plurality of transistors may include a driving transistor DT for supplying current to the light emitting device LD and a scanning transistor ST for supplying a data voltage to a gate electrode of the driving transistor DT. Figure 6 As shown. The driving transistor DT has a gate electrode connected to the source electrode of the scanning transistor ST, a source electrode connected to the high potential voltage line VDDL to which a high potential voltage is applied, and a drain electrode connected to the first electrode of the light emitting device LD. The scanning transistor ST has a gate electrode connected to the scanning line (Sk, k is an integer satisfying 1≤k≤n), a source electrode connected to the gate electrode of the driving transistor DT, and a drain electrode connected to the data line (Dj, j is an integer satisfying 1≤j≤m).

[0062] A capacitor Cst is formed between the gate electrode and the source electrode of the driving transistor DT. The storage capacitor Cst stores a differential voltage between a gate electrode voltage and a source electrode voltage of the driving transistor DT.

[0063] The driving transistor DT and the scanning transistor ST may be formed of thin film transistors. Figure 4 In the embodiment, the driving transistor DT and the scanning transistor ST have been mainly described as being formed by a plurality of P-type MOSFETs (metal oxide semiconductor field effect transistors), but are not limited thereto. The driving transistor DT and the scanning transistor ST may be formed by a plurality of N-type MOSFETs. In this case, the positions of the source electrode and the drain electrode of each driving transistor DT and the scanning transistor ST may be changed.

[0064] In addition, Figure 4 , it is shown that the first subpixel PX1, the second subpixel PX2, and the third subpixel PX3 each include 2T1C (2 transistors-1 capacitor), and the 2T1C has one driving transistor DT, one scanning transistor ST, and one capacitor Cst, but is not limited thereto. The first subpixel PX1, the second subpixel PX2, and the third subpixel PX3 may each include a plurality of scanning transistors ST and a plurality of capacitors Cst.

[0065] Since the second and third subpixels PX2 and PX3 may be represented by substantially the same circuit diagram as the first subpixel PX1 , a detailed description will be omitted.

[0066] The driving circuit 20 outputs signals and voltages for driving the display panel 10. The driving circuit 20 may include a data driving circuit 21 and a timing controller 22. The data driving circuit 21 receives digital video data DATA and a source control signal DCS from the timing controller 22. The data driving circuit 21 converts the digital video data DATA into analog data voltages according to the source control signal DCS and supplies them to the data lines D1 to Dm of the display panel 10.

[0067] The timing controller 22 receives digital video data DATA and timing signals from the host system. The timing signals may include a vertical synchronization signal, a horizontal synchronization signal, a data enable signal, and a dot clock. The host system may be an application processor of a smart phone or tablet computer, a system on a chip of a monitor or TV, etc.

[0068] The timing controller 22 generates control signals for controlling the operation timing of the data driving circuit 21 and the scan driving circuit 30. The control signals may include a source control signal DCS for controlling the operation timing of the data driving circuit 21 and a scan control signal SCS for controlling the operation timing of the scan driving circuit 30.

[0069] The driving circuit 20 may be disposed in a non-display area NDA provided on one side of the display panel 10. The driving circuit 20 may be formed of an integrated circuit (IC) and mounted on the display panel 10 using a chip on glass (COG) scheme, a chip on plastic (COP) scheme, or an ultrasonic bonding scheme, but is not limited thereto. For example, the driving circuit 20 may be mounted on a circuit board instead of the display panel 10.

[0070] The data driving circuit 21 may be mounted on the display panel 10 using a chip on glass (COG) scheme, a chip on plastic (COP) scheme, or an ultrasonic bonding scheme, and the timing controller 22 may be mounted on a circuit board, but is not limited thereto.

[0071] The scan driving circuit 30 receives the scan control signal SCS from the timing controller 22. The scan driving circuit 30 generates scan signals according to the scan control signal SCS and supplies them to the scan lines S1 to Sn of the display panel 10. The scan driving circuit 30 may include a plurality of transistors and be formed in the non-display area NDA of the display panel 10. Alternatively, the scan driving circuit 30 may be formed as an integrated circuit and, in this case, may be mounted on a gate flexible film attached to the other side of the display panel 10.

[0072] The power circuit 50 can generate a voltage required to drive the display panel 10 from the main power source provided by the system board, and provide the voltage to the display panel 10. For example, the power circuit 50 generates a high potential voltage VDD and a low potential voltage VSS for driving the light emitting device LD of the display panel 10 from the main power source, and provides them to the high potential voltage line VDDL and the low potential voltage line VSSL. In addition, the power circuit 50 can generate and provide a driving voltage for driving the driving circuit 20 and the scanning driving circuit 30 from the main power source.

[0073] Figure 5 yes Figure 3 An enlarged view of a first panel area in a display device.

[0074] Reference Figure 5 The display device 100 of this embodiment can be manufactured by mechanically and electrically connecting a plurality of panel regions (such as the first panel region A1) in a tiling manner. The first panel region A1 may include a plurality of unit pixels ( Figure 3 A plurality of light emitting devices 150 are arranged in PX).

[0075] Figure 6 yes Figure 5 A magnified view of area A2. Figure 6 The display device 100 according to the embodiment may include a substrate 200, assembly wirings 201 and 202, an insulating layer 206, and a plurality of semiconductor light emitting devices 150. The display device 100 may include more components.

[0076] The assembly wiring may include a first assembly wiring 201 and a second assembly wiring 202 that are spaced apart from each other. The first assembly wiring 201 and the second assembly wiring 202 may be provided to generate a dielectrophoresis (DEP) force so that the semiconductor light emitting device 150 may be assembled. For example, the semiconductor light emitting device 150 may be one of a lateral semiconductor light emitting device, a flip-chip semiconductor light emitting device, and a vertical semiconductor light emitting device, but is not limited thereto.

[0077] The semiconductor light emitting device 150 may include a red semiconductor light emitting device 150R, a green semiconductor light emitting device 150G, and a blue semiconductor light emitting device 150B to form sub-pixels, but is not limited thereto. In other words, red and green may be realized by providing red phosphor and green phosphor.

[0078] The substrate 200 may be a supporting member for supporting components disposed on the substrate 200 , or a protecting member for protecting the components.

[0079] The substrate 200 may be a rigid substrate or a flexible substrate (e.g., a substantially flexible substrate). The substrate 200 may be formed of sapphire, glass, silicon, or polyimide. In addition, the substrate 200 may include a flexible material such as polyethylene naphthalate (PEN) or polyethylene terephthalate (PET). In addition, the substrate 200 may be a transparent material, but is not limited thereto. The substrate 200 may be used as a supporting substrate in a display panel, and may also be used as a substrate for assembly when a self-assembled light-emitting device is assembled.

[0080] The substrate 200 may be provided with Figure 3 and Figure 4The backplane of the circuits in the sub-pixels PX1, PX2 and PX3 shown, such as transistors ST and DT, capacitor Cst, signal lines, etc., but not limited thereto. The insulating layer 206 may include an insulating and flexible organic material, such as polyimide, polyaluminum chloride (PAC), PEN, PET, polymers, etc. The insulating layer 206 may include an inorganic material, such as silicon oxide (SiO2) or silicon nitride series (SiN x ). The insulating layer 206 may be formed integrally with the substrate 200 to form one substrate.

[0081] The insulating layer 206 may be a conductive adhesive layer having viscosity and conductivity. The conductive adhesive layer may have ductility so that the display device can achieve flexible functions. For example, the insulating layer 206 may be an anisotropic conductive film (ACF). For example, the insulating layer 206 may be a conductive adhesive layer, such as an anisotropic conductive medium or a solution containing conductive particles. The conductive adhesive layer may be a layer that is conductive in a direction perpendicular to the thickness but electrically insulated in a direction horizontal to the thickness.

[0082] The insulating layer 206 may include an assembly hole 203 into which the semiconductor light emitting device 150 is inserted. Therefore, during self-assembly, the semiconductor light emitting device 150 may be easily inserted into the assembly hole 203 of the insulating layer 206. The assembly hole 203 may be referred to as an insertion hole, a fixing hole, an alignment hole, or the like.

[0083] The assembly hole 203 may be referred to as a hole, a dent, a groove, a recess, a hole, etc. The assembly hole 203 may be different according to the shape of the semiconductor light emitting device 150. For example, the red semiconductor light emitting device, the green semiconductor light emitting device, and the blue semiconductor light emitting device may all have different shapes, and an assembly hole 203 having a shape corresponding to each of the shapes of these semiconductor light emitting devices may be provided. For example, the assembly hole 203 may include a first assembly hole for assembling a red semiconductor light emitting device, a second assembly hole for assembling a green semiconductor light emitting device, and a third assembly hole for assembling a blue semiconductor light emitting device. For example, the red semiconductor light emitting device is circular, the green semiconductor light emitting device is a first ellipse having a first short axis and a second long axis, and the blue semiconductor light emitting device is a second ellipse having a second short axis and a second long axis, but is not limited thereto. The second long axis of the ellipse of the blue semiconductor light emitting device may be greater than the second long axis of the ellipse of the green semiconductor light emitting device, and the second short axis of the ellipse of the blue semiconductor light emitting device may be less than the first short axis of the ellipse of the green semiconductor light emitting device.

[0084] The method of mounting the semiconductor light emitting device 150 on the substrate 200 may include, for example, a self-assembly method ( Figure 7 ) and transfer methods. Figure 7An example of assembling the light emitting device according to the embodiment to the substrate by a self-assembly method is shown. Figure 7 An example of assembling the semiconductor light emitting device according to the embodiment to a display panel by a self-assembly method using an electromagnetic field is described.

[0085] The assembly substrate 200 described below may also be used as a panel substrate in a display device after assembling the light emitting device, but the embodiment is not limited thereto. Figure 7 , the semiconductor light emitting device 150 can be placed in the chamber 1300 filled with the fluid 1200, and the semiconductor light emitting device 150 can be moved to the assembly substrate 200 under the action of the magnetic field generated by the assembly device 1100. The light emitting device 150 adjacent to the assembly hole 207H of the assembly substrate 200 can be assembled into the assembly hole 207H by the DEP force generated by the electric field of the assembly wiring. The fluid 1200 can be water, such as deionized water, but is not limited thereto. The chamber 1300 can also be called a water bath, a container, a vessel, etc.

[0086] After the semiconductor light emitting device 150 is placed in the chamber 1300, the assembly substrate 200 may be disposed on the chamber 1300. According to the present embodiment, the assembly substrate 200 may be placed in the chamber 1300.

[0087] The electric field may be formed in response to the application of the AC voltage, and the semiconductor light emitting device 150 injected into the assembly hole 207H may be fixed by the DEP force caused by the electric field. The distance between the first assembly wiring 201 and the second assembly wiring 202 may be smaller than the width of the semiconductor light emitting device 150 or the width of the assembly hole 207H. Therefore, the assembly position of the semiconductor light emitting device 150 using the electric field may be fixed more accurately.

[0088] An insulating layer may be formed on the first assembled wiring 201 and the second assembled wiring 202. Thus, the first assembled wiring 201 and the second assembled wiring 202 are protected from the fluid 1200, and leakage of current flowing through the first assembled wiring 201 and the second assembled wiring 202 may be prevented. For example, the insulating layer may be formed of a single layer or multiple layers of an inorganic insulator (e.g., silicon dioxide or aluminum oxide, an organic insulator, etc.). The insulating layer may have a minimum thickness to prevent damage to the first assembled wiring 201 and the second assembled wiring 202 when assembling the semiconductor light emitting device 150. The insulating layer may have a maximum thickness for stably assembling the semiconductor light emitting device 150.

[0089] Isolation ribs may be formed on the upper side of the insulating layer. The isolation ribs may be Figure 5 The insulating layer 206 is shown, but is not limited thereto. A portion of the isolation rib may be located on the upper side of the first assembly wiring 201 and the second assembly wiring 202 , and the remaining portion may be located on the upper side of the assembly substrate 200 .

[0090] When manufacturing the assembly substrate 200 , a portion of the barrier rib formed on the upper side of the insulating layer may be removed. Therefore, an assembly hole 207h through which each semiconductor light emitting device 150 is coupled and assembled to the assembly substrate 200 may be formed.

[0091] An assembly hole 207H to which the semiconductor light emitting device 150 is coupled is formed in the assembly substrate 200, and a surface on which the assembly hole 207H is formed may contact the fluid 1200. The assembly hole 207H may guide a precise assembly position of the semiconductor light emitting device 150.

[0092] The shape and size of the assembly hole 207H may correspond to the shape and size of the semiconductor light emitting device 150 to be assembled at the corresponding position. Therefore, it is possible to prevent other semiconductor light emitting devices or a plurality of semiconductor light emitting devices from being assembled in the assembly hole 207H.

[0093] Return to reference Figure 7 , after the assembly substrate 200 is disposed in the chamber, the assembly device 1100 applying a magnetic field may move along the assembly substrate 200. The assembly device 1100 may be a permanent magnet or an electromagnet.

[0094] The assembly device 1100 may move while in contact with the assembly substrate 200 so as to maximize the area of ​​influence of the magnetic field on the fluid 1200. According to the present embodiment, the assembly device 1100 may include a plurality of magnets or may include a magnet having a size corresponding to that of the assembly substrate 200. In this case, the moving distance of the assembly device 1100 may be limited within a predetermined range.

[0095] The semiconductor light emitting device 150 in the chamber 1300 may move toward the assembly device 1100 and the assembly substrate 200 under the effect of the magnetic field generated by the assembly device 1100 .

[0096] The semiconductor light emitting device 150 may enter the assembly hole 207H and be fixed in the assembly hole 207H by the DEP force when moving toward the assembly device 1100. The DEP force may be formed by the electric field between the assembly wirings 201 and 202 (see Figure 6 ). Since the self-assembly method using the above electric / magnetic field can significantly shorten the time required to assemble each semiconductor light-emitting device onto a substrate, large-area high-pixel displays can be manufactured faster and more economically.

[0097] In the following, reference will be made to Figures 8 to 23 Various embodiments for solving the above problems are described. The following omitted description can be obtained from the above Figures 2 to 7 The description and the corresponding drawings are easy to understand.

[0098] The size of the semiconductor light emitting device described below may be micrometers or less. In addition, the semiconductor light emitting device described below may be a vertical type semiconductor light emitting device in which current flows in a vertical direction, but is not limited thereto.

[0099] [First embodiment]

[0100] Figure 8 is a cross-sectional view showing a semiconductor light emitting device according to a first embodiment. Fig. 9 is a bottom view showing the semiconductor light emitting device according to the first embodiment after the first electrode is removed.

[0101] Reference Figure 8 , the semiconductor light emitting device 150A according to the first embodiment may include a light emitting layer 150a, a first electrode 154, a second electrode 155, an insulating layer 157, and a plurality of metal layers 156-1 and 156-2. The semiconductor light emitting device 150A according to the first embodiment may include more components than those described above. Each side surface of the light emitting layer 150a, the insulating layer 157, and the metal layers 156-1 and 156-2 may have a circular surface with a predetermined curvature. The curvatures of each side surface of the light emitting layer 150a, the insulating layer 157, and the metal layers 156-1 and 156-2 may be the same, but are not limited thereto.

[0102] The light emitting layer 150a may emit light of a specific color. The light of the specific color may be determined by the semiconductor material of the light emitting layer 150a. The light of the specific color may be, for example, red light, green light, or blue light.

[0103] The light emitting layer 150a may include a plurality of semiconductor layers. For example, the light emitting layer 150a may include at least one first conductive type semiconductor layer 151, an active layer 152, and at least one second conductive type semiconductor layer 153. The active layer 152 may be disposed on the first conductive type semiconductor layer 151, and the second conductive type semiconductor layer 153 may be disposed on the active layer 152. The first conductive type semiconductor layer 151 may include an n-type dopant, and the second conductive type semiconductor layer 153 may include a p-type dopant, but is not limited thereto.

[0104] The first electrode 154 may be disposed under the light emitting layer 150 a. The first electrode 154 may be disposed on a lower side of the light emitting layer 150 a. The first electrode 154 may be disposed on a lower side of the first conductive type semiconductor layer 151 .

[0105] The first electrode 154 may be a cathode electrode and may have a multi-layer structure including a plurality of layers. For example, the first electrode 154 may include a reflective layer 154-1, an electrode layer 154-2, and the like.

[0106] The reflective layer 154-1 may be disposed below the light emitting layer 150a. The reflective layer 154-1 may be disposed on the lower side of the light emitting layer 150a. The reflective layer 154-1 may be disposed on the lower side of the first conductive type semiconductor layer 151. The reflective layer 154-1 may be a metal having excellent (e.g., high) reflectivity, and may include aluminum (Al), silver (Ag), gold (Ag)-palladium (Pd)-copper (Cu) alloy (APC), etc.

[0107] An ohmic contact layer may be disposed below the first conductive semiconductor layer 151. In this case, the reflective layer 154-1 may contact the first conductive semiconductor layer 151 through the ohmic contact layer, but is not limited thereto. The ohmic contact layer may be disposed on the top (eg, exposed) surface of the reflective layer 154-1.

[0108] The electrode layer 154-2 may be made of a metal having excellent electrical conductivity. The electrode layer 154-2 may include a solder metal. The solder metal may include tin (Sn)-lead (Pb), tin-lead-bismuth (Bi), tin-gold (Au), tin-antimony, lead-silver, etc. The isolation rib 340 may be provided on the first insulating layer 330 to guide the installation of the light emitting device 150A, which will be described in more detail.

[0109] When the semiconductor light emitting device 150A according to the first embodiment is assembled in the assembly hole 340H ( Fig. 20 After that, a hot pressing process may be performed to electrically connect the first electrode 154 directly to the second assembly wiring 322. After that, the isolation rib 340 may be removed and the second insulating layer 157-2 and the electrode wiring 360 may be formed, so that the display device ( Fig.19 of 300).

[0110] The electrode layer 154-2 may be made of a metal having excellent conductivity other than solder metal. In this case, the semiconductor light emitting device 150A according to the first embodiment may be assembled on a backplane substrate ( Fig. 22 301A in the assembly hole 340H, and the isolation rib 340 can be removed, so that at least two or more of the second insulating layer 157-2 and the electrode wiring 360 can be formed. Therefore, the display device ( Fig.21 The display device 301 according to the second embodiment can solve the problem that occurs during the thermal pressing process when manufacturing the semiconductor light emitting device 150A according to the first embodiment.

[0111] The second electrode 155 may be disposed on the light emitting layer 150a. The second electrode 155 may be an anode electrode and may have a multilayer structure including one or more layers. The second electrode 155 may be disposed on the upper side of the second conductive semiconductor layer 153 of the light emitting layer 150a. The second electrode 155 may contact the upper surface of the second conductive semiconductor layer 153 of the light emitting layer 150a, but is not limited thereto. The size of the second electrode 155 may be smaller than the size of the light emitting layer 150a. The second electrode 155 may be a transparent conductor so that the light of the active layer 152 can be emitted forward, and may include ITO, IZO, etc.

[0112] The plurality of metal layers 156 - 1 and 156 - 2 may be disposed to be spaced apart from each other. That is, the plurality of metal layers 156 - 1 and 156 - 2 may not contact each other.

[0113] The plurality of metal layers 156 - 1 and 156 - 2 may include at least one or more first metal layers 156 - 1 and at least one or more second metal layers 156 - 2 .

[0114] The first metal layer 156-1 may be provided to increase reflection efficiency. That is, the first metal layer 156-1 may include a reflective layer. For example, the first metal layer 156-1 may be a metal having excellent reflectivity and may include Al, Ag, APC (Ag-Pd-Cu alloy), etc.

[0115] The first metal layer 156-1 may be disposed adjacent to a side portion (e.g., a lateral portion) of the light emitting layer 150a. The first metal layer 156-1 may be disposed closer to a side portion of the light emitting layer 150a than the second metal layer 156-2. The first metal layer 156-1 may be disposed along the periphery of the side portion of the light emitting layer 150a. The upper side of the first metal layer 156-1 may be flush with the upper surface of the second electrode 155. That is, the upper side of the first metal layer 156-1 and the upper surface of the second electrode 155 may be located on the same horizontal line. The upper side of the first metal layer 156-1 may be higher than the upper surface of the second conductive semiconductor layer 153. Therefore, light propagating laterally in the active layer 152 may be reflected forward by the first metal layer 156-1, thereby improving light output efficiency and increasing brightness.

[0116] The second metal layer 156-2 may be used to assist the movement of the semiconductor light emitting device 150A during self-assembly. The second metal layer 156-2 may include a magnetic layer. For example, the second metal layer 156-2 may be a material with excellent magnetization ability and may include Ni, Co, Fe, etc. The magnetization strength of the magnetic layer may be determined by the area or thickness of the magnetic layer.

[0117] The second metal layer 156-2 may be disposed to be spaced apart outwardly from the first metal layer 156-1. The second metal layer 156-2 may be disposed along a periphery of a side portion of the light emitting layer 150a. The second metal layer 156-2 may be disposed along a periphery of a side portion of the first metal layer 156-1.

[0118] The upper side of the second metal layer 156-2 may be flush with the upper surface of the second electrode 155. That is, the upper side of the second metal layer 156-2 and the upper surface of the second electrode 155 may be located on the same horizontal line. The upper side of the second metal layer 156-2 may be higher than the upper surface of the second conductive semiconductor layer 153. Therefore, the area of ​​the second metal layer 156-2 may be expanded as much as possible, thereby increasing the magnetizing force during the self-assembly process and increasing the moving speed of the semiconductor light emitting device 150A. Therefore, the assembly speed may be increased.

[0119] The upper side of the second metal layer 156-2 may be flush with the upper side of the first metal layer 156-1. That is, the upper side of the first metal layer 156-1 and the upper side of the second metal layer 156-2 may be located on the same horizontal line. As will be explained later, the first metal layer 156-1 and the second metal layer 156-2 may be formed using the same photosensitive film, so that the manufacturing process may be simplified and the manufacturing process time may be shortened.

[0120] At least one or more of the plurality of metal layers 156-1 and 156-2 may be in contact with the first electrode 154. As an example, the first metal layer 156-1 may be in contact with the first electrode 154. The first metal layer 156-1 may be in contact with the reflective layer 154-1 of the first electrode 154. The lower side of the first metal layer 156-1 may be in contact with the upper surface of the reflective layer 154-1 of the first electrode 154. Since the first metal layer 156-1 includes a reflective layer, and the first metal layer 156-1 and the reflective layer 154-1 of the first electrode 154 are in contact with each other, light generated inside the light emitting layer 150a is not transmitted between the first metal layer 156-1 and the reflective layer 154-1 of the first electrode 154. This arrangement can increase the reflection efficiency as much as possible and increase the brightness.

[0121] As another example, the second metal layer 156-2 may be in contact with the first electrode 154. The second metal layer 156-2 may be in contact with the electrode layer 154-2 of the first electrode 154. The lower side of the second metal layer 156-2 may be in contact with the upper surface of the reflective layer 154-1 of the first electrode 154. The insulating layer 157 may be in contact with the first electrode 154. At least one or more of the first insulating layer 157-1, the second insulating layer 157-2, and the third insulating layer 157-3 may be in contact with the first electrode 154.

[0122] As an example, the first insulating layer 157-1 may be in contact with the reflective layer 154-1 of the first electrode 154. The lower side of the first insulating layer 157-1 may be in contact with the upper surface of the reflective layer 154-1 of the first electrode 154. As another example, the second insulating layer 157-2 may be in contact with the reflective layer 154-1 of the first electrode 154. The lower side of the second insulating layer 157-2 may be in contact with the upper surface of the reflective layer 154-1 of the first electrode 154. As another example, the third insulating layer 157-3 may be in contact with the reflective layer 154-1 of the first electrode 154. The lower side of the third insulating layer 157-3 may be in contact with the upper surface of the reflective layer 154-1 of the first electrode 154.

[0123] The first metal layer 156-1 and / or the second metal layer 156-2 have poor bonding properties with the first electrode 154. Therefore, since not only the first metal layer 156-1 and the second metal layer 156-2 but also at least one or more of the first insulating layer 157-1, the second insulating layer 157-2, and the third insulating layer 157-3 may be in contact with the first electrode 154, the bonding properties between the first electrode 154 and the plurality of metal layers 156-1 and 156-2 may be enhanced to prevent product defects such as separation of the first electrode 154.

[0124] The reflective layer 154-1 in the first electrode 154 may contact the first metal layer 156-1 on the side portion of the light emitting layer 150a, but may not contact the second metal layer 156-2. Figure 8 Differently, the size of the reflective layer 154-1 of the first electrode 154 may be reduced to the size of the first metal layer 156-1 on the side portion of the light emitting layer 150a. In this case, the edge region 154b of the electrode layer 154-2 of the first electrode 154 may be in contact with the second metal layer 156-2. Therefore, the lower side of the reflective layer may be in contact with the upper surface of the reflective layer 154-1 of the first electrode 154, and the lower side of the second metal layer 156-2 may be in contact with the upper surface of the electrode layer 154-2 of the first electrode 154. In addition, the lower side of the first insulating layer 157-1 may be in contact with the upper surface of the reflective layer 154-1 of the first electrode 154. The lower side of the second insulating layer 157-2 and / or the lower side of the third insulating layer 157-3 may be in contact with the electrode layer 154-2 of the first electrode 154.

[0125] The bonding performance between the first metal layer 156-1 and the light emitting layer 150a and between the first metal layer 156-1 and the second metal layer 156-2 is poor. According to the embodiment, the first metal layer 156-1 may be spaced apart from the light emitting layer 150a. That is, the first insulating layer 157-1 may be disposed between the light emitting layer 150a and the first metal layer 156-1. The first insulating layer 157-1 may enhance the bonding performance of the first metal layer 156-1 and the light emitting layer 150a. In addition, the second insulating layer 157-2 may be disposed between the first metal layer 156-1 and the second metal layer 156-2. The second insulating layer 157-2 may enhance the bonding performance of the second metal layer 156-2 and the first metal layer 156-1. Therefore, the first metal layer 156-1 will not be peeled off from the light emitting layer 150a, or the second metal layer 156-2 will not be peeled off from the first metal layer 156-1, thereby preventing product defects and improving reliability.

[0126] The shapes of the plurality of metal layers 156-1 and 156-2 may correspond to each other. When viewed from a three-dimensional perspective, the plurality of metal layers 156-1 and 156-2 may have a columnar structure, but are not limited thereto. For example, Fig.11 As shown, the second metal layer 156 - 2 may have a columnar structure. Similarly, the first metal layer 156 - 1 may also have a columnar structure.

[0127] like Fig. 9 As shown, when viewed from the bottom, the plurality of metal layers 156-1 and 156-2 may be in a ring shape, but are not limited thereto. For example, the first metal layer 156-1 may be in a ring shape. For example, the second metal layer 156-2 may be in a ring shape.

[0128] The thickness of the first metal layer 156-1 and the second metal layer 156-2 may be different. The thickness of the second metal layer 156-2 may be thinner than the thickness of the first metal layer 156-1. For example, the thickness of the first metal layer 156-1 may be 50nm to 300nm. If the thickness of the first metal layer 156-1 is less than 50nm, light can be transmitted and the reflection efficiency will be reduced. When the thickness of the second metal layer 156-2 exceeds 300nm, the size of the semiconductor light emitting device 150A may increase. For example, the thickness of the second metal layer 156-2 may be 20nm to 50nm. When the thickness of the second metal layer 156-2 is less than 20nm, the magnetization intensity of the second metal layer 156-2 will become weak, and the mobility of the semiconductor light emitting device 150A will be reduced, thereby reducing the assembly speed. When the thickness of the second metal layer 156-2 exceeds 50nm, the magnetization force of the second metal layer 156-2 may be very strong. Therefore, during the self-assembly, the semiconductor light emitting device 150A may not be assembled on the substrate, or the semiconductor light emitting device 150A assembled on the substrate may be separated from the substrate and moved toward the magnet. Therefore, the assembly yield may be reduced.

[0129] The insulating layer 157 may be made of a material with excellent insulating properties, thereby protecting the light emitting layer 150a and preventing leakage current from flowing through both sides of the light emitting layer 150a. In addition, the insulating layer 157 may act as a repulsive force against the DEP force during self-assembly, so that the first electrode 154 of the semiconductor light emitting device 150A may be properly assembled by facing the bottom surface of the assembly hole 340H on the backplane substrate ( Fig. 20 300A, Fig. 22 301A).

[0130] The insulating layer 157 may be disposed on a side portion of the light emitting layer 150a. The insulating layer 157 may surround the side portion of the light emitting layer 150a. The insulating layer 157 may be disposed along the periphery of the side portion of the light emitting layer 150a. A portion of the insulating layer 157 may be disposed on an upper side of the second electrode 155. For example, a portion of the insulating layer 157 may overlap with an edge region 154b of the second electrode 155 in a vertical direction.

[0131] The insulating layer 157 may not be disposed on the lower side of the first electrode 154. As will be explained later, the insulating layer 157 and the first electrode 154 can be affected by the DEP force. For example, with respect to the DEP force, a pulling force can be applied to the first electrode 154, and a pushing force can be applied to the insulating layer 157.

[0132] A DEP force may be formed in the assembly hole 340H of the backplane substrates 300A and 301A, and the semiconductor light emitting device 150A may be located in the assembly hole 340H. In this case, the first electrode 154 of the semiconductor light emitting device 150A may be pulled by the DEP force formed in the assembly hole 340H and the insulating layer 157 may be pushed by the DEP force formed in the assembly hole 340H, so that the first electrode 154 of the semiconductor light emitting device 150A may be assembled facing the bottom surface of the assembly hole 340H.

[0133] The insulating layer 157 may be separated by a plurality of metal layers 156-1 and 156-2. The insulating layer 157 may include a first insulating layer 157-1, a second insulating layer 157-2, and a third insulating layer 157-3.

[0134] The first insulating layer 157-1 may surround the side portion of the light emitting layer 150a. The first insulating layer 157-1 may be disposed along the periphery of the side portion of the light emitting layer 150a. The first insulating layer 157-1 may be disposed between the light emitting layer 150a and the first metal layer 156-1, and the first metal layer 156-1 may be separated from the light emitting layer 150a by the light emitting layer 157-1. The first insulating layer 157-1 may be disposed between the side portion of the light emitting layer 150a and the side portion of the first metal layer 156-1. The first metal layer 156-1 may be disposed to be spaced apart from the side portion of the light emitting layer 150a. The first metal layer 156-1 may be spaced apart from the side portion of the light emitting layer 150a by the thickness of the first insulating layer 157-1.

[0135] The second insulating layer 157-2 may surround the side portion of the first metal layer 156-1. The second insulating layer 157-2 may be disposed along the periphery of the side portion of the first metal layer 156-1. The second insulating layer 157-2 may be disposed between the first metal layer 156-1 and the second metal layer 156-2, and the second insulating layer 157-2 may separate the second metal layer 156-2 from the first metal layer 156-1. The second insulating layer 157-2 may be disposed between the side portion of the first metal layer 156-1 and the side portion of the second metal layer 156-2. The second metal layer 156-2 may be disposed to be spaced apart from the first metal layer 156-1. The second metal layer 156-2 may be spaced apart from the side portion of the first metal layer 156-1 by the thickness of the second insulating layer 157-2.

[0136] The third insulating layer 157-3 may surround a side portion of the second metal layer 156-2. The third insulating layer 157-3 may be disposed along a periphery of a side portion of the second metal layer 156-2. The third insulating layer 157-3 may be disposed on an outer side of the second metal layer 156-2. The third insulating layer 157-3 may be disposed on an outer side surface of the second metal layer 156-2.

[0137] A portion of the third insulating layer 157-3 may overlap with the upper side of the light emitting layer 150a in the vertical direction. A portion of the third insulating layer 157-3 may overlap with the edge region 154b of the upper side of the light emitting layer 150a in the vertical direction. A portion of the third insulating layer 157-3 may be disposed along the edge region 154b of the upper side of the light emitting layer 150a.

[0138] The first metal layer 156-1 and the second metal layer 156-2 may pass through the third insulating layer 157-3 without being exposed. That is, the third insulating layer 157-3 may be disposed on the upper side of the first metal layer 156-1. The third insulating layer 157-3 may be disposed on the upper side of the second metal layer 156-2. Therefore, the upper side of the first metal layer 156-1 and / or the upper side of the second metal layer 156-2 may be in contact with the third insulating layer 157-3. A portion of the third insulating layer 157-3 may be disposed on the edge region 154b of the upper side of the light emitting layer 150a via the upper side of the second metal layer 156-2 and the upper side of the first metal layer 156-1 from the side portion of the second metal layer 156-2.

[0139] The third insulating layer 157-3 may be in contact with the first insulating layer 157-1 and the second insulating layer 157-2. The third insulating layer 157-3 may be in contact with the upper side of the first insulating layer 157-1. The third insulating layer 157-3 may be in contact with the upper side of the second insulating layer 157-2. The upper sides of the first metal layer 156-1, the second metal layer 156-2, the first insulating layer 157-1 and the second insulating layer 157-2 may be positioned the same as each other. That is, the upper sides of the first metal layer 156-1, the second metal layer 156-2, the first insulating layer 157-1 and the second insulating layer 157-2 are located on the same horizontal line.

[0140] The first insulating layer 157-1, the second insulating layer 157-2, and the third insulating layer 157-3 may be formed of the same insulating material. For example, the first insulating layer 157-1, the second insulating layer 157-2, and the third insulating layer 157-3 may be formed of SiO2 or SiN2.

[0141] The first insulating layer 157 - 1 , the second insulating layer 157 - 2 , and the third insulating layer 157 - 3 may be formed of different insulating materials.

[0142] For example, the dielectric constant of the first insulating layer 157-1 may be greater than that of the second insulating layer 157-2 or the third insulating layer 157-3. The DEP force formed on the substrate by the first insulating layer 157-1 becomes greater, so that the semiconductor light emitting device 150A can be assembled into the assembly hole faster, or the fixation of the semiconductor light emitting device 150A assembled in the assembly hole can be strengthened.

[0143] The second insulating layer 157 - 2 may be formed of an insulating material having excellent bonding properties with adjacent metal layers (eg, the first metal layer 156 - 1 and / or the second metal layer 156 - 2 ).

[0144] The third insulating layer 157-3 may be made of an insulating material having excellent insulating properties and durability. Leakage current of the light emitting layer 150a may be blocked by the third insulating layer 157-3, and the light emitting layer 150a may be physically or electrically protected from external influences.

[0145] The semiconductor light emitting device 150A may have a multi-level structure. For example, a multi-level structure may be formed in a first conductive type semiconductor light emitting device. For example, a multi-level structure may be formed by having different areas or widths in the first conductive type semiconductor layer 151. For example, the widths of the lower side and the upper side of the first conductive type semiconductor layer 151 may be different. In this case, a step may appear between the upper side of the first conductive type semiconductor layer 151 and the lower side of the first conductive type semiconductor layer 151. That is, the upper surface of the edge region 154b of the lower side of the first conductive type semiconductor layer 151 does not overlap with the upper side of the first conductive type semiconductor layer 151, so it may be exposed.

[0146] Due to the multi-level structure of the semiconductor light emitting device 150A, assembly defects can be prevented during self-assembly. That is, due to the multi-level structure of the semiconductor light emitting device 150A, during self-assembly, the semiconductor light emitting device 150A can be moved to the correct position without significantly shaking up and down or turning over, thereby preventing assembly defects. Because assembly defects are prevented, light emission defects can also be prevented.

[0147] Fig.10 A state in which adjacent semiconductor light emitting devices in each of the comparative example and the embodiment are bonded together is shown.

[0148] like Fig.10 As shown in (a), in the comparative example, a magnetic layer is provided on the lower side of the light-emitting layer 150a. When the magnet moves during self-assembly, the semiconductor light-emitting devices 1 and 2 in the fluid can move toward the magnet. Since the magnetic layer is provided on the lower side of each semiconductor light-emitting device 1 and 2, and its lower surfaces 1a and 2a have flat surfaces, the semiconductor light-emitting devices 1 and 2 are bonded to each other. That is, the magnetic layer on the lower side of each semiconductor light-emitting device 1 and 2 is in surface contact with the lower surfaces 1a and 2a of the semiconductor light-emitting devices 1 and 2, so that the semiconductor light-emitting devices 1 and 2 after bonding will not separate from each other. The surrounding semiconductor light-emitting devices are bonded to the semiconductor light-emitting devices 1 and 2, resulting in an aggregation phenomenon in the form of clumps. In this case, there is a problem that not only the assembly speed is reduced, but also the assembly yield and the luminous efficiency are reduced.

[0149] However, if Fig.10 As shown in (b), in an embodiment, the magnetic layer may not be disposed on the lower side of the light emitting layer 150a. In an embodiment, the magnetic layer may be disposed on the side surfaces 150-1a and 150-2a of the light emitting layer 150a. Therefore, during self-assembly, the side surfaces 150-1a and 150-2a of the semiconductor light emitting devices 150-1 and 150-2 moved by the magnet will adhere to each other. However, since each side surface of the light emitting layer 150a, the insulating layer 157, and the metal layers 156-1 and 156-2 has a circular surface with a predetermined curvature, the side surfaces 150-1a and 150-2a of adjacent semiconductor light emitting devices 150-1 and 150-2 may be in line contact with each other.

[0150] Therefore, the bonded semiconductor light emitting devices 150-1 and 150-2 can be immediately removed and quickly and accurately moved to the desired position on the substrate by the magnet. Therefore, the assembly speed of the semiconductor light emitting devices 150-1 and 150-2 can be increased, and the assembly yield and luminous efficiency can be improved. That is, the aggregation phenomenon in the form of clumps does not occur, so that one semiconductor light emitting device 150-1 and 150-2 can be correctly assembled in each assembly hole on the substrate, and the correctly assembled semiconductor light emitting devices 150-1 and 150-2 will not have electrical connection defects. Therefore, the assembly yield and luminous efficiency can be improved.

[0151] Fig.11 The magnetic field of a magnet applied to the pillar-shaped structure of the second metal layer is shown.

[0152] like Fig.11 As shown, the second metal layer 156-2 including the magnetic layer may have a columnar structure. During self-assembly, the magnet 220 may be located on the second metal layer 156-2. The magnet 220 may include Figure 7 In the assembled device 1100 shown, a plurality of magnets 220 may be provided. In this case, the magnetic field generated by the magnet 220 may be applied to the columnar structure of the second metal layer 156-2, thereby magnetizing the second metal layer 156-2. In this case, since the columnar structure of the second metal layer 156-2 is magnetized, when the magnet 220 moves in a direction parallel to the substrate surface, the semiconductor light emitting device 150A including the second metal layer 156-2 may be stably and balancedly moved to a desired position on the substrate.

[0153] The magnet 220 may be located below the second metal layer 156 - 2 .

[0154] According to an embodiment, the semiconductor light emitting device will not agglomerate in the fluid during self-assembly. A plurality of metal layers 156-1 and 156-2 may be disposed on the side portion of the light emitting layer 150a, and one of the plurality of metal layers 156-1 and 156-2 may include a magnetic layer. The side surface of the magnetic layer disposed on the side portion of the light emitting layer 150a may have a rounded surface. The semiconductor light emitting devices 150-1 and 150-2 may be moved in the fluid by the magnet 220, and the semiconductor light emitting devices 150-1 and 150-2 may be attached to each other by the corresponding magnetic layers of the semiconductor light emitting devices 150-1 and 150-2. However, since the semiconductor light emitting devices 150-1 and 150-2 are in line contact through the side portion provided with the magnetic layer, the semiconductor light emitting devices 150-1 and 150-2 after bonding may fall off immediately, and the semiconductor light emitting devices 150-1 and 150-2 after bonding may fall off immediately and no aggregation phenomenon occurs. Therefore, the semiconductor light emitting devices 150 - 1 and 150 - 2 are not agglomerated and move individually within the fluid, so that the assembly speed of the semiconductor light emitting devices 150 - 1 and 150 - 2 can be increased, and the assembly yield and light emission yield can be improved.

[0155] According to the embodiment, since one of the plurality of metal layers 156 - 1 and 156 - 2 disposed on the side portion of the light emitting layer 150 a includes a reflective layer, the reflective layer 156 - 1 may improve light output efficiency, thereby improving brightness.

[0156]

Manufacturing process of semiconductor light-emitting devices

[0157] Fig. 12A (a) to (d) and Fig. 12B (e) to (g) show a manufacturing process of the semiconductor light emitting device according to the first embodiment.

[0158] like Fig. 12A As shown in (a), the light emitting layer 150a may be deposited on the growth substrate 230. The growth substrate 230 may be formed of sapphire, GaN, glass, silicon, ceramic, etc. The light emitting layer 150a may include at least one or more first conductive type semiconductor layers 151, an active layer 152, and at least one or more second conductive type semiconductor layers 153. The first conductive type semiconductor layer 151 may include an n-type dopant, and the second conductive type semiconductor layer 153 may include a p-type dopant.

[0159] The second electrode 155 may be formed on the light emitting layer 150a, that is, on the second conductive type semiconductor layer 153. Since the light of the active layer 152 must be emitted forward, the second electrode 155 may be made of a transparent conductive material such as ITO, IZO, etc. A photosensitive film may be formed on the second electrode 155 and patterned to form a photosensitive pattern 240. That is, the photosensitive pattern 240 may be formed by removing the remaining photosensitive film except for the area to be mesa patterned.

[0160] like Fig. 12A As shown in (b), an etching process may be performed using the photosensitive pattern 240 as a mask to remove the second electrode 155 and the light emitting layer 150a. Since the photosensitive pattern 240 is used as a mask, a mesa patterned light emitting layer 150a having a size corresponding to the photosensitive pattern 240 may be formed. The mesa patterned light emitting layer 150a may be referred to as a chip. The etching process may be a dry etching process, and the mesa patterned light emitting layer 150a may be formed by etching obliquely rather than vertically. The photosensitive pattern 240 may be removed.

[0161] like Fig. 12A As shown in (c), after the first insulating layer 157-1, the first metal layer 156-1, the second insulating layer 157-2 and the second metal layer 156-2 are sequentially formed, a photosensitive film 250 may be formed on the second metal layer 156-2.

[0162] For example, the first metal layer 156-1 may include a reflective layer. For example, the second metal layer 156-2 may include a magnetic layer. The first insulating layer 157-1 and the second insulating layer 157-2 may be made of different insulating materials. For example, the dielectric constant of the first insulating layer 157-1 may be greater than that of the second insulating layer 157-2. The second insulating layer 157-2 may be made of an insulating material having excellent bonding properties.

[0163] like Fig. 12A As shown in (d), an ashing process may be performed to form the photosensitive pattern 250a. The ashing process may be performed until the upper surface of the photosensitive pattern 250a matches the upper surface of the second electrode 155. Therefore, after the ashing process is performed, the upper surface of the photosensitive pattern 250a may match the upper surface of the second electrode 155. The second metal layer 156-2 may be exposed.

[0164] A first etching process may be performed to remove the exposed second metal layer 156-2. By removing the second metal layer 156-2, the second insulating layer 157-2 may be exposed. A second etching process may be performed to remove the exposed second insulating layer 157-2. By removing the second insulating layer 157-2, the first metal layer 156-1 may be exposed. A third etching process may be performed to remove the exposed first metal layer 156-1. By removing the first metal layer 156-1, the first insulating layer 157-1 may be exposed. A fourth etching process may be performed to remove the exposed first insulating layer 157-1. By removing the first insulating layer 157-1, the upper surface of the second electrode 155 may be exposed. The first etching process and the third etching process may be etching processes for removing metal, and the second etching process and the fourth etching process may be etching processes for removing inorganic insulating materials.

[0165] like Fig. 12B As shown in (e), the third insulating layer 157-3 may be formed on the exposed second metal layer 156-2, the second insulating layer 157-2, the first metal layer 156-1, and the first insulating layer 157-1. The third insulating layer 157-3 may be formed on the second electrode 155. The insulating layer 157 may be composed of the first insulating layer 157-1, the second insulating layer 157-2, and the third insulating layer 157-3. The upper side of the first metal layer 156-1 and / or the second metal layer 156-2 may be in contact with the third insulating layer 157-3. The upper side of the first insulating layer 157-1 and / or the second insulating layer 157-2 may be in contact with the third insulating layer 157-3.

[0166] like Fig. 12B As shown in (f), an etching process may be performed to remove a portion of the third insulating layer 157-3 on the second electrode 155. Thus, an opening 158 through which the second electrode 155 corresponding to the removed portion of the third insulating layer 157-3 is exposed may be formed.

[0167] The process of forming the opening 158 on the second electrode 155 may be omitted. As an example, when the semiconductor light emitting device 150A is assembled on the backplane substrate ( Fig. 20 300A, Fig. 22 After the semiconductor light emitting device 150A is assembled on the backplane substrate (301A), a process of forming an opening 158 on the second electrode 155 of the semiconductor light emitting device 150A may be performed. As another example, after the semiconductor light emitting device 150A is assembled on the backplane substrate ( Fig. 20 300A, Fig. 22 301A) and forming a second insulating layer ( Fig.19 350 of them Fig.21After forming the contact hole for forming the electrode wiring 360 in the second insulating layer 157-2, the third insulating layer 157-3 of the semiconductor light emitting device 150A may be removed and the opening 158 may be formed together. That is, the contact hole and the opening 158 may be formed by the same etching process.

[0168] Afterwards, the growth substrate 230 may be attached to the temporary substrate 260 using an adhesive layer 270. The adhesive layer 270 may be formed of an organic insulating material, but is not limited thereto. The adhesive layer 270 may be formed of a metal such as aluminum (Al). A sacrificial layer may be formed on the adhesive layer 270 using a metal such as aluminum (Al). In this case, the adhesive layer 270 may contact the third insulating layer 157-3 and the second electrode 155, and the sacrificial layer may contact the temporary substrate 260.

[0169] Afterwards, a laser lift-off (LLO) process may be performed to remove the growth substrate 230. After the growth substrate 230 is removed, a cleaning process, a polishing process, a drying process, etc. may be performed to remove impurities. In addition, when the undoped layer is formed as a portion of the light emitting layer 150a in contact with the growth substrate 230, the undoped layer may be removed by an etching process.

[0170] The mesa-patterned light emitting layer 150a located between the chips, namely the first insulating layer 157-1, the first metal layer 156-1, the second insulating layer 157-2, the second metal layer 156-2 and the third insulating layer 157-3, may be removed by removing the growth substrate 230. In addition, the first insulating layer 157-1, the first metal layer 156-1, the second insulating layer 157-2, the second metal layer 156-2 and the third insulating layer 157-3 may remain on the side portion of the light emitting layer 150a.

[0171] Afterwards, the first electrode 154 may be formed on the lower surface of the light emitting layer 150a exposed by removing the growth substrate 230. The first electrode 154 may have a multilayer structure including a plurality of layers. For example, the first electrode 154 may include a reflective layer 154-1, an electrode layer 154-2, and the like.

[0172] Afterwards, if Fig. 12B As shown in (g), the adhesive layer 270 can be removed, so that the temporary substrate 260 can be separated and the semiconductor light emitting device 150A according to the first embodiment can be manufactured. Therefore, the semiconductor light emitting device 150A according to the first embodiment may include a light emitting layer 150a, a first electrode 154, a second electrode 155, an insulating layer 157, and a plurality of metal layers 156-1 and 156-2.

[0173] [Second embodiment]

[0174] Fig.13is a cross-sectional view showing a semiconductor light emitting device according to a second embodiment. Fig.14 is a bottom view showing the semiconductor light emitting device according to the second embodiment after the first electrode is removed.

[0175] The second embodiment is the same as the first embodiment except for the third metal layer 156-3 and the fourth insulating layer 157-4. In the second embodiment, components having the same structure, shape and / or function as the first embodiment are given the same reference numerals and detailed description is omitted.

[0176] Reference Fig.13 The semiconductor light emitting device 150B according to the second embodiment may include a light emitting layer 150a, a first electrode 154, a second electrode 155, an insulating layer 157, and a plurality of metal layers 156-1 to 156-3. The semiconductor light emitting device 150B according to the second embodiment may include more components than these.

[0177] The first electrode 154 may be disposed on a lower side of the light emitting layer 150 a , and the second electrode 155 may be disposed on an upper side of the light emitting layer 150 a .

[0178] A plurality of metal layers 156-1 to 156-3 may surround the light emitting layer 150a. The plurality of metal layers 156-1 to 156-3 may be arranged to be spaced apart from each other. That is, the plurality of metal layers 156-1 to 156-3 may not contact each other. The plurality of metal layers 156-1 to 156-3 may have corresponding shapes. When viewed from a three-dimensional perspective, the plurality of metal layers 156-1 to 156-3 may have a columnar structure. When viewed from the bottom, the plurality of metal layers 156-1 to 156-3 may be annular.

[0179] The plurality of metal layers 156 - 1 to 156 - 3 may include at least one or more first metal layers 156 - 1 , at least one or more second metal layers 156 - 2 , and at least one or more third metal layers 156 - 3 .

[0180] The first metal layer 156-1 may be disposed closer to the light emitting layer 150a than the second metal layer 156-2 or the third metal layer 156-3. The first metal layer 156-1 may include a reflective layer.

[0181] The second metal layer 156 - 2 may be disposed to be spaced apart outwardly from the first metal layer 156 - 1 .

[0182] The third metal layer 156-3 may be disposed to be spaced apart outwardly from the second metal layer 156-2. The third metal layer 156-3 may include a reflective layer.

[0183] like Fig.14As shown, the first metal layer 156-1, the second metal layer 156-2, and the third metal layer 156-3 may have shapes corresponding to each other. For example, when viewed from the bottom, the first metal layer 156-1, the second metal layer 156-2, and the third metal layer 156-3 may be annular, but are not limited thereto. The second metal layer 156-2 may be disposed between the first metal layer 156-1 and the third metal layer 156-3. The second metal layer 156-2 may surround the first metal layer 156-1. The third metal layer 156-3 may surround the second metal layer 156-2.

[0184] The first metal layer 156-1 can improve light output efficiency by more easily extracting light generated inside the light emitting layer 150a to the outside. The third metal layer 156-3 can be used to extract light incident from the outside to the inside of the display device ( Fig.19 and Fig.21 ) is reflected back to the outside.

[0185] In the drawings, the first metal layer 156 - 1 and the third metal layer 156 - 3 are illustrated to have the same acute angle with respect to the lower surface of the light emitting layer 150 a , but the first metal layer 156 - 1 and the third metal layer 156 - 3 may be inclined at different angles.

[0186] As an example, the upper side of at least one or more layers of the first metal layer 156-1, the second metal layer 156-2, and the third metal layer 156-3 may be flush with the upper surface of the second electrode 155. As another example, the upper side of at least one or more layers of the first metal layer 156-1, the second metal layer 156-2, and the third metal layer 156-3 may be located higher than the upper surface of the second conductive semiconductor layer 153 of the light emitting layer 150a.

[0187] The insulating layer 157 may surround the light emitting layer 150 a . The plurality of metal layers 156 - 1 to 156 - 3 may be separated by the insulating layer 157 .

[0188] The insulating layer 157 may include a first insulating layer 157-1, a second insulating layer 157-2, a third insulating layer 157-3, and a fourth insulating layer 157-4. The first insulating layer 157-1 may be disposed between the light emitting layer 150a and the first metal layer 156-1. The second insulating layer 157-2 may be disposed between the first metal layer 156-1 and the second metal layer 156-2. The third insulating layer 157-3 may be disposed on the outer surface of the third metal layer 156-3. The fourth insulating layer 157-4 may be disposed between the second metal layer 156-2 and the third metal layer 156-3.

[0189] A portion of the third insulating layer 157-3 may be disposed on the edge region 154b of the second metal layer 156-2. For example, a portion of the third insulating layer 157-3 may overlap with the edge region 154b of the second metal layer 156-2 in the vertical direction. For example, a portion of the third insulating layer 157-3 may be disposed on the edge region 154b of the second metal layer 156-2 via the third metal layer 156-3, the fourth insulating layer 157-4, the second metal layer 156-2, the second insulating layer 157-2, the first metal layer 156-1, and the first insulating layer 157-1 on the outer surface of the third metal layer 156-3.

[0190] As an example, the upper side of at least one or more layers of the first metal layer 156-1, the second metal layer 156-2, and the third metal layer 156-3 may be in contact with the third insulating layer 157-3. As another example, the upper side of at least one or more layers of the first insulating layer 157-1, the second insulating layer 157-2, and the fourth insulating layer 157-4 may be in contact with the third insulating layer 157-3.

[0191] At least one or more layers of the plurality of metal layers 156 - 1 to 156 - 3 may be in contact with the first electrode 154 .

[0192] As an example, the lower side of the first metal layer 156-1 may be in contact with the upper surface of the reflective layer 154-1 of the first electrode 154. The first metal layer 156-1 may include a reflective layer, and since the first metal layer 156-1 and the reflective layer 154-1 of the first electrode 154 may be in contact with each other, light generated inside the light emitting layer 150a does not pass through between the first metal layer 156-1 and the reflective layer 154-1 of the first electrode 154. This arrangement may increase reflection efficiency as much as possible and increase brightness.

[0193] As another example, a lower side of the second metal layer 156-2 may contact an upper surface of the reflective layer 154-1 of the first electrode 154. As another example, a lower side of the third metal layer 156-3 may contact an upper surface of the reflective layer 154-1 of the first electrode 154.

[0194] The insulating layer 157 may be in contact with the first electrode 154. At least one or more layers of the first insulating layer 157-1, the second insulating layer 157-2, and the third insulating layer 157-3 may be in contact with the first electrode 154.

[0195] As an example, a lower side of the first insulating layer 157-1 may be in contact with an upper surface of the reflective layer 154-1 of the first electrode 154. As another example, a lower side of the second insulating layer 157-2 may be in contact with an upper surface of the reflective layer 154-1 of the first electrode 154. As another example, a lower side of the third insulating layer 157-3 may be in contact with an upper surface of the reflective layer 154-1 of the first electrode 154.

[0196] The first metal layer 156-1, the second metal layer 156-2, and / or the third metal layer 156-3 have poor bonding properties with the first electrode 154. Therefore, not only the first metal layer 156-1, the second metal layer 156-2, and the third metal layer 156-3, but also at least one or more of the first insulating layer 157-1, the second insulating layer 157-2, and the third insulating layer 157-3 may contact the first electrode 154, so that the bonding properties between the first electrode 154 and the plurality of metal layers 156-1 to 156-3 may be enhanced, and product defects such as separation of the first electrode 154 may be reduced.

[0197] The reflective layer 154-1 in the first electrode 154 may contact the first metal layer 156-1 on the side portion of the light emitting layer 150a, but may not contact the second metal layer 156-2 and / or the third metal layer 156-3. Figure 8 Differently, the size of the reflective layer 154-1 of the first electrode 154 can be reduced to the size of the first metal layer 156-1 on the side portion of the light emitting layer 150a. In this case, the edge region 154b of the electrode layer 154-2 of the first electrode 154 can be in contact with the second metal layer 156-2 and / or the third metal layer 156-3. Therefore, the lower side of the first metal layer 156-1 can be in contact with the upper surface of the reflective layer 154-1 of the first electrode 154, and the lower side of the second metal layer 156-2 and / or the lower side of the third metal layer 156-3 can be in contact with the upper surface of the reflective layer 154-1 of the first electrode 154. The electrode 154 can be in contact with the upper surface of the electrode layer 154-2. In addition, the lower side of the first insulating layer 157-1 can be in contact with the upper surface of the reflective layer 154-1 of the first electrode 154. A lower side of the second insulating layer 157 - 2 and / or a lower side of the third insulating layer 157 - 3 may make contact with the electrode layer 154 - 2 of the first electrode 154 .

[0198] According to the embodiment, the second metal layer 156-2 is provided to prevent the aggregation phenomenon between the semiconductor light emitting devices 150B during self-assembly. Therefore, the assembly speed can be increased, and the assembly yield and the light emitting efficiency can be improved.

[0199] According to the embodiment, the first metal layer 156 - 1 may be provided so that light inside the semiconductor light emitting device 150B may be easily extracted to the outside, thereby improving light output efficiency and increasing brightness.

[0200] According to the embodiment, a third metal layer 156-3 may be provided so that light incident from the outside to the inside of the display device may be reflected back to the outside, thereby further increasing the brightness. Since the third metal layer 156-3 is provided in the semiconductor light emitting device 150B, there is no need to provide a separate reflective layer in the display device, thereby simplifying the structure and reducing manufacturing costs.

[0201] [Third embodiment]

[0202] Fig.15 is a cross-sectional view showing a semiconductor light emitting device according to a third embodiment.

[0203] The third embodiment is the same as the first embodiment except that the plurality of metal layers 156-1 and 156-2 are not in contact with the first electrode 154. The third embodiment is also applicable to the second embodiment. In the third embodiment, components having the same structure, shape and / or function as those in the first embodiment are given the same reference numerals, and detailed description is omitted.

[0204] refer to Fig.15 The semiconductor light emitting device 150C according to the third embodiment may include a light emitting layer 150a, a first electrode 154, a second electrode 155, an insulating layer 157, and a plurality of metal layers 156-1 and 156-2. The semiconductor light emitting device 150C according to the third embodiment may include more components than these.

[0205] A plurality of metal layers 156-1 and 156-2 may be disposed on a side portion of the light emitting layer 150a. A plurality of metal layers 156-1 and 156-2 may be disposed along a periphery of a side portion of the light emitting layer 150a. For example, a first metal layer 156-1 and a second metal layer 156-2 may be disposed along a periphery of a side portion of the light emitting layer 150a.

[0206] The insulating layer 157 may be disposed on a side portion of the light emitting layer 150a. The insulating layer 157 may be disposed along a periphery of a side portion of the light emitting layer 150a. A plurality of metal layers 156-1 and 156-2 may be disposed on the insulating layer 157. A portion of the insulating layer 157 may be disposed on an edge region 154b of the second electrode 155 via the plurality of metal layers 156-1 and 156-2.

[0207] For example, the first metal layer 156-1 and the second metal layer 156-2 may be disposed to be spaced apart from each other in the insulating layer 157. The first metal layer 156-1 and the second metal layer 156-2 may be separated from each other by the first insulating layer 157-1, the second insulating layer 157-2, and the third insulating layer 157-3. The first metal layer 156-1 may be disposed between the first insulating layer 157-1 and the second insulating layer 157-2, and the second metal layer 156-2 may be disposed between the second insulating layer 157-2 and the third insulating layer 157-3. The first insulating layer 157-1 may be disposed closer to a side portion of the light emitting layer 150a than the second insulating layer 157-2 or the third insulating layer 157-3.

[0208] The upper side of at least one or more layers of the plurality of metal layers 156-1 and 156-2 may be flush with the upper side of the insulating layer 157, but the lower side of at least one or more layers of the plurality of metal layers 156-1 and 156-2 may not be flush with the upper side of the insulating layer 157. That is, the lower side of at least one or more layers of the plurality of metal layers 156-1 and 156-2 may be located higher than the lower side of the insulating layer 157. In other words, the width of at least one or more layers of the plurality of metal layers 156-1 and 156-2 may be smaller than the width of the insulating layer 157.

[0209] For example, the lower side of the first metal layer 156-1 may be higher than the lower side of the first insulating layer 157-1 and / or the lower side of the second insulating layer 157-2. Therefore, a space 156-1a may be formed between the lower side of the first insulating layer 157-1 and the lower side of the second insulating layer 157-2. For example, the lower side of the second metal layer 156-2 may be higher than the lower side of the second insulating layer 157-2 and / or the lower side of the third insulating layer 157-3. Therefore, a space 156-2a may be formed between the lower side of the second insulating layer 157-2 and the lower side of the third insulating layer 157-3. Air may be filled in the corresponding spaces 156-1a and 156-2a, but is not limited thereto.

[0210] In this case, the first electrode 154 may not contact the first metal layer 156-1 and / or the second metal layer 156-2. That is, the first electrode 154 may be spaced apart from the first metal layer 156-1 and / or the second metal layer 156-2 by the spaces 156-1a and 156-2a.

[0211] For example, the reflective layer 154-1 of the first electrode 154 may be spaced apart from the first metal layer 156-1 by the space 156-1a. For example, the reflective layer 154-1 of the first electrode 154 may be spaced apart from the second metal layer 156-2 by the space 156-2a.

[0212] According to the embodiment, since the first electrode 154 is not in contact with the plurality of metal layers 156-1 and 156-2, the first electrode 154 may not be electrically connected to the plurality of metal layers 156-1 and 156-2. Therefore, by preventing the current flowing from the light emitting layer 150a to the first electrode 154 from unnecessarily flowing into the plurality of metal layers 156-1 and 156-2, electrical and optical characteristics may be improved.

[0213] According to the embodiment, in the direction from the side portion of the light emitting layer 150a to the outside, the first insulating layer 157-1, the space 156-1a formed by the first metal layer 156-1, the second insulating layer 157-2, the space 156-2a formed by the second metal layer 156-2, and the third insulating layer 157-3 may be provided. Therefore, the refractive indexes of the first insulating layer 157-1, the space 156-1a, the second insulating layer 157-2, the space 156-2a, and the third insulating layer 157-3 are different, so that the reflection efficiency of the light generated inside the light emitting layer 150a can be further improved, and high brightness can be achieved.

[0214] The lower surface of at least one or more of the first metal layer 156-1, the second metal layer 156-2, the first insulating layer 157-1, the second insulating layer 157-2, and the third insulating layer 157-3 may be inclined relative to the lower surface of the light emitting layer 150a. The lower surfaces of the first metal layer 156-1, the second metal layer 156-2, the first insulating layer 157-1, the second insulating layer 157-2, and the third insulating layer 157-3 may be inclined at the same angle relative to the lower surface of the light emitting layer 150a, but are not limited thereto.

[0215] The shape of the edge region 154b of the first electrode 154 may correspond to the shape of the lower side of the plurality of metal layers 156-1 and 156-2 and the insulating layer 157 disposed on the side portion of the light emitting layer 150a. The edge region 154b of the first electrode 154 may also be inclined with respect to the lower surface of the light emitting layer 150a. The edge region 154b of the first electrode 154 may have an obtuse angle with respect to the lower surface of the light emitting layer 150a.

[0216] Therefore, since the central region 154a of the first electrode 154 has a flat surface and the edge region 154b of the first electrode 154 has an inclined surface, the size of the first electrode 154 can be increased compared to the first and second embodiments. The increase in the size of the first electrode 154 can lead to an increase in the DEP force during self-assembly, thereby improving assembly yield and light emission efficiency.

[0217] Fig.16 A manufacturing process of the semiconductor light emitting device according to the third embodiment is shown.

[0218] Fig.16 (a) and Fig. 12B Therefore, from Fig. 12A (a) to Fig. 12B The manufacturing process of (e) can be easily understood Fig.16 The manufacturing process before (a) is described below, and the detailed description is omitted.

[0219] like Fig.16 As shown in (a), the growth substrate 230 may be removed using an LLO process.

[0220] Therefore, if Fig.16 As shown in (b), lower sides of the plurality of metal layers 156-1 and 156-2 and the insulating layer 157 disposed on the side portion of the light emitting layer 150a may be inclined toward the lower surface of the light emitting layer 150a.

[0221] By irradiating laser between the growth substrate 230 and the lower surface of the light emitting layer 150a using the LLO process, the light emitting layer 150a can be separated from the growth substrate 230. Since the laser is not irradiated between the insulating layer 157 (i.e., the lower surface of the first insulating layer 157-1) and the growth substrate 230, the insulating layer 157 is not separated from the growth substrate 230. Therefore, although the light emitting layer 150a is easily separated from the growth substrate 230, the insulating layer 157 on the side portion of the light emitting layer 150a is not separated from the growth substrate 230. The insulating layer 157 on the light emitting layer 150a can be separated from the growth substrate 230 together with the light emitting layer 150a, and the insulating layer 157 on the side portion of the light emitting layer 150a can remain on the growth substrate 230 as it is. Therefore, it can be obtained as Fig.16 The structure shown in (b).

[0222] like Fig.16 As shown in (c), an etching process may be performed to partially remove the lower side of the first metal layer 156-1 and / or the second metal layer 156-2, thereby forming spaces 156-1a and 156-2a.

[0223] like Fig.16 As shown in (d), the first electrode 154 can be formed on the lower side of the light emitting layer 150a, the lower side of the insulating layer 157, and the lower sides of the plurality of metal layers 156-1 and 156-2, so that the semiconductor light emitting device 150C according to the third embodiment can be manufactured.

[0224] [Fourth embodiment]

[0225] Fig.17 is a cross-sectional view showing a semiconductor light emitting device according to a fourth embodiment.

[0226] The fourth embodiment is the same as the first embodiment except that the plurality of metal layers 156-1 and 156-2 are not in contact with the first electrode 154. The fourth embodiment is also applicable to the second embodiment. In the fourth embodiment, components having the same structure, shape and / or function as the first embodiment are given the same reference numerals, and detailed description is omitted.

[0227] refer to Fig.17 The semiconductor light emitting device 150D according to the fourth embodiment may include a light emitting layer 150a, a first electrode 154, a second electrode 155, an insulating layer 157, and a plurality of metal layers 156-1 and 156-2. The semiconductor light emitting device 150D according to the fourth embodiment may include more components than these.

[0228] A plurality of metal layers 156-1 and 156-2 may be disposed on a side portion of the light emitting layer 150a. A plurality of metal layers 156-1 and 156-2 may be disposed along a periphery of a side portion of the light emitting layer 150a. For example, a first metal layer 156-1 and a second metal layer 156-2 may be disposed along a periphery of a side portion of the light emitting layer 150a.

[0229] The plurality of metal layers 156-1 and 156-2 may have a bent structure. The insulating layer 157 may have a bent structure. The plurality of metal layers 156-1 and 156-2 may have shapes corresponding to each other. The plurality of metal layers 156-1 and 156-2 and the insulating layer 157 may have shapes corresponding to each other.

[0230] The plurality of metal layers 156-1 and 156-2 may be disposed in parallel on the side portion of the light emitting layer 150a and may be bent from the lower side of the light emitting layer 150a toward an outward direction. The plurality of metal layers 156-1 and 156-2 may be bent from the lower side of the light emitting layer 150a toward an outward direction and may be disposed in parallel to the first electrode 154. The insulating layer 157 may be disposed in parallel to the side portion of the light emitting layer 150a and may be bent from the lower side of the light emitting layer 150a toward an outward direction. The insulating layer 157 may be bent from the lower side of the light emitting layer 150a toward an outward direction and may be disposed in parallel to the first electrode 154.

[0231] The first metal layer 156-1 may be disposed in parallel to the side portion of the light emitting layer 150a, and may be disposed in parallel to the first electrode 154 at the lower side of the light emitting layer 150a. In this case, the first metal layer 156-1 may include a 1-1 metal layer disposed in parallel to the side portion of the light emitting layer 150a and a 1-2 metal layer bent in an outward direction from the bottom of the 1-1 metal layer and disposed in parallel to the first electrode 154. The 1-2 metal layer may be spaced apart from the first electrode 154 by the first insulating layer 157-1. The first insulating layer 157-1 may be disposed between the 1-2 metal layer of the first electrode 154 and the reflective layer 154-1. Therefore, the first electrode 154 may be spaced apart from the first metal layer 156-1 without contacting the first metal layer 156-1.

[0232] The shapes of the second insulating layer 157 - 2 , the second metal layer 156 - 2 , and the third insulating layer 157 - 3 may each correspond to the shape of the first metal layer 156 - 1 .

[0233] According to the embodiment, since the first electrode 154 is not in contact with the plurality of metal layers 156-1 and 156-2, the first electrode 154 may not be electrically connected to the plurality of metal layers 156-1 and 156-2. Therefore, by preventing the current flowing from the light emitting layer 150a to the first electrode 154 from unnecessarily flowing into the plurality of metal layers 156-1 and 156-2, electrical and optical characteristics may be improved.

[0234] [Fifth embodiment]

[0235] Fig.18 1 is a cross-sectional view showing a semiconductor light emitting device according to a fifth embodiment. The fifth embodiment is the same as the first embodiment except for the fourth metal layer 156-4. The fifth embodiment is also applicable to the second to fourth embodiments. In the fifth embodiment, components having the same structure, shape and / or function as the first embodiment are given the same reference numerals, and detailed description is omitted.

[0236] refer to Fig.18 The semiconductor light emitting device 150D according to the fourth embodiment may include at least two or more of a light emitting layer 150a, a first electrode 154, a second electrode 155, an insulating layer 157, and a plurality of metal layers 156-1, 156-2, and 156-4. The semiconductor light emitting device 150D according to the fourth embodiment may include more components than these.

[0237] A plurality of metal layers 156-1, 156-2, and 156-4 may be disposed on a side portion of the light emitting layer 150a. A plurality of metal layers 156-1, 156-2, and 156-4 may be disposed along a periphery of a side portion of the light emitting layer 150a. For example, a first metal layer 156-1 and a second metal layer 156-2 may be disposed along a periphery of a side portion of the light emitting layer 150a.

[0238] The plurality of metal layers 156-1, 156-2, and 156-4 may include a first metal layer 156-1, a second metal layer 156-2, and a fourth metal layer 156-4. Since the first metal layer 156-1 and the second metal layer 156-2 have been previously described, a detailed description is omitted.

[0239] The fourth metal layer 156-4 may contact the side surface of the light emitting layer 150a. The fourth metal layer 156-4 may contact the side surface of the first conductive type semiconductor layer 151 of the light emitting layer 150a. The fourth metal layer 156-4 may be disposed between the light emitting layer 150a and the first insulating layer 157-1 of the insulating layer 157.

[0240] The fourth metal layer 156-4 can be used to improve the electrical characteristics between the metal and the semiconductor layer. For example, the fourth metal layer 156-4 may include an ohmic layer with excellent ohmic characteristics. The fourth metal layer 156-4 allows current to flow smoothly from the light emitting layer 150a to the first electrode 154 without loss, thereby improving the electrical characteristics. Optionally, the fourth metal layer 156-4 may include a reflective layer, an electrode layer, an adhesive layer, etc.

[0241] The upper side of the fourth metal layer 156-4 may be disposed lower than the active layer 152. That is, when the fourth metal layer 156-4 is disposed higher than the active layer 152, an electrical short circuit may occur between the first conductive type semiconductor layer 151 and the second conductive type semiconductor layer 153 due to the second metal layer 156-2. Therefore, the upper side of the fourth metal layer 156-4 may be disposed lower than the active layer 152, so that the electrical short circuit may be prevented.

[0242] The first metal layer 156-1 and the second metal layer 156-2 may be bent according to the thickness of the fourth metal layer 156-4. Similarly, the first insulating layer 157-1, the second insulating layer 157-2 and the third insulating layer 157-3 included in the insulating layer 157 may also be bent. According to an embodiment, the electrical characteristics may be improved by providing the fourth metal layer 156-4.

[0243]

Display device

[0244] Fig.19 is a cross-sectional view showing a display device according to a first embodiment. Fig. 20 is a cross-sectional view showing a backplane substrate according to the first embodiment.

[0245] refer to Fig.19 The display device 300 according to the first embodiment may include a substrate 310, a first assembly wiring 321, a second assembly wiring 322, a first insulating layer 330, a semiconductor light emitting device 150A, a second insulating layer 350, and an electrode wiring 360. The display device 300 according to the first embodiment may include more components than these.

[0246] The semiconductor light emitting device may be the semiconductor light emitting device 150A according to the first embodiment, but the semiconductor light emitting devices 150B to 150E according to the second to fifth embodiments may also be similarly applied to the display device 300 according to the first embodiment.

[0247] The display device 300 according to the first embodiment can be used Fig. 20 The display device 300 according to the first embodiment can be manufactured by using the back panel substrate 300A shown. That is, the semiconductor light emitting device 150A can be assembled into the assembly hole 340H of the back panel substrate 300A using a self-assembly process. Then, after removing the isolation ribs 340 on the back panel substrate 300A, the second insulating layer 350 and the electrode wiring 360 can be formed by subsequent processes, so that the display device 300 according to the first embodiment can be manufactured. Although the accompanying drawings show the display device 300 with the isolation ribs 340 removed, a display device 300 without removing the isolation ribs 340 can be provided. In this case, the second insulating layer 350 can be omitted.

[0248] The backplane substrate 300A may include a substrate 310 , a first assembled wiring 321 , a second assembled wiring 322 , a first insulating layer 330 , and an isolation rib 340 .

[0249] The substrate 310 may be a supporting substrate for supporting the components of the display device 300 according to the first embodiment (i.e., the semiconductor light emitting device 150A, the second insulating layer 350, the electrode wiring 360, etc.), and may be referred to as a lower substrate or a display substrate. The upper substrate may be disposed on the electrode wiring 360, but is not limited thereto.

[0250] The first assembly wiring 321 may be disposed on the substrate 310. The second assembly wiring 322 may be disposed on the substrate 310. For example, the first assembly wiring 321 and the second assembly wiring 322 may be disposed on different layers. For example, the first assembly wiring 321 may be disposed on the lower side of the first insulating layer 330, and the second assembly wiring 322 may be disposed on the upper side of the first insulating layer 330. The first assembly wiring 321 and the second assembly wiring 322 may both be used to assemble the semiconductor light emitting device 150A into the assembly hole 340H using a self-assembly method. That is, the semiconductor light emitting device 150A may be moved by assembling the device ( Figure 71100) is assembled in the assembly hole 340H during self-assembly using the DEP force formed by the voltage supplied to the first assembly wiring 321 and the second assembly wiring 322. The diameter of the assembly hole 340H may be greater than the diameter of the semiconductor light emitting device 150A.

[0251] The first assembled wiring 321 and the second assembled wiring 322 may each include a plurality of metal layers. The first assembled wiring 321 and the second assembled wiring 322 may include a main wiring and an auxiliary electrode, respectively. The main wiring of each of the first assembled wiring 321 and the second assembled wiring 322 may be arranged longer along one direction of the substrate 310. The auxiliary electrode of each of the first assembled wiring 321 and the second assembled wiring 322 may extend from the main wiring to the assembly hole 340H. The auxiliary electrode may be electrically connected to the main wiring. The main wiring may be arranged on the auxiliary wiring, and the lower surface of the main wiring may contact the upper surface of the auxiliary wiring, but is not limited thereto.

[0252] The first insulating layer 330 may be disposed on the first assembly wiring 321 and the second assembly wiring 322. For example, the first insulating layer 330 may be made of an inorganic material or an organic material. For example, the first insulating layer 330 may be made of a material having a dielectric constant related to the DEP force. For example, as the dielectric constant of the first insulating layer 330 increases, the DEP force may increase, but is not limited thereto. The first insulating layer 330 may prevent the fluid from directly contacting the first assembly wiring 321 or the second assembly wiring 322 and from causing corrosion during self-assembly due to the assembly hole 340H of the isolation rib 340 formed subsequently.

[0253] The isolation rib 340 may be disposed on the first insulating layer 330. The first insulating layer 330 may have an assembly hole 340H. The assembly hole 340H may be formed in each of the plurality of sub-pixels PX1, PX2, and PX3 of each pixel of the plurality of pixels PX. That is, each of the sub-pixels PX1, PX2, and PX3 may be formed in one assembly hole 340H, but is not limited thereto. For example, the first insulating layer 330 may be exposed within the assembly hole 340H. For example, the bottom surface 158-2 of the assembly hole 340H may be the upper surface of the first insulating layer 330. The height (or thickness) of the isolation rib 340 may be determined by considering the thickness of the semiconductor light emitting device 150A.

[0254] A self-assembly process may be performed on the backplane substrate 300A configured as described above, so that the plurality of semiconductor light emitting devices 150A may be assembled into the plurality of sub-pixels PX1 , PX2 , and PX3 of each of the plurality of pixels PX on the substrate 310 .

[0255] As an example, each of the plurality of red semiconductor light emitting devices 150A, the plurality of green semiconductor light emitting devices 150A, and the plurality of blue semiconductor light emitting devices 150A may be sequentially assembled into the plurality of sub-pixels PX1 , PX2 , and PX3 of the respective plurality of pixels PX on the substrate 310 .

[0256] As another example, a plurality of red semiconductor light emitting devices, a plurality of green semiconductor light emitting devices, and a plurality of blue semiconductor light emitting devices may be simultaneously assembled in a plurality of sub-pixels PX1, PX2, and PX3 of each pixel of a plurality of pixels PX on the substrate 310. A plurality of red semiconductor light emitting devices, a plurality of green semiconductor light emitting devices, and a plurality of blue semiconductor light emitting devices may fall into the fluid of the chamber and mix. Subsequently, the same self-assembly process is performed so that a plurality of red semiconductor light emitting devices, a plurality of green semiconductor light emitting devices, and a plurality of blue semiconductor light emitting devices may be simultaneously assembled in a plurality of sub-pixels PX1, PX2, and PX3 of each pixel of a plurality of pixels PX on the substrate 310.

[0257] For simultaneous self-assembly, the red semiconductor light emitting device, the green semiconductor light emitting device, and the blue semiconductor light emitting device may be exclusive of each other. That is, the shapes and sizes of the red semiconductor light emitting device, the green semiconductor light emitting device, and the blue semiconductor light emitting device may be different. For example, the red semiconductor light emitting device may be circular, the green semiconductor light emitting device may be a first elliptical shape having a first short axis and a first long axis, and the blue semiconductor light emitting device may be a second elliptical shape. The second elliptical shape may have a second short axis smaller than the first short axis and a second long axis larger than the first long axis.

[0258] After assembling the semiconductor light emitting device, a fixing member may be disposed between the semiconductor light emitting device within the assembly hole 340H and the first insulating layer 330 so that the semiconductor light emitting device may be fixed to the first insulating layer 330 by the fixing member. The fixing member may include an organic material such as PAC or a photosensitive material, but is not limited thereto.

[0259] Afterwards, a hot pressing process may be performed so that the first electrode 154 of the semiconductor light emitting device 150A may be electrically connected to the second assembly wiring 322. The electrode layer 154-2 of the first electrode 154 may include a solder metal. The electrode layer 154-2 of the first electrode 154 may be melted and cooled by the hot pressing process so that the first electrode 154 of the semiconductor light emitting device 150A may be physically and electrically connected to the second assembly wiring 322.

[0260] Afterwards, an etching process may be performed to remove the isolation rib 340. Afterwards, a subsequent process may be used to electrically connect with the semiconductor light emitting device 150A. That is, a subsequent process may be used to form the second insulating layer 350 and the electrode wiring 360.

[0261] The second insulating layer 350 may be disposed on the first insulating layer 330. The second insulating layer 350 may be disposed on the semiconductor light emitting device 150A as well as the first insulating layer 330. In addition, the second insulating layer 350 may be disposed along the periphery of the side portion of the semiconductor light emitting device 150A. The semiconductor light emitting device 150A may be firmly fixed by the second insulating layer 350.

[0262] The second insulating layer 350 may not be disposed on the upper side of the semiconductor light emitting device 150A. The second insulating layer 350 may be a planarization layer to easily form the electrode wiring 360 or other layers. Therefore, the upper surface of the second insulating layer 350 may be a flat surface, but is not limited thereto. The first insulating layer 330 and the second insulating layer 350 may each include an organic material or an inorganic material. For example, the first insulating layer 330 may include an inorganic material, and the second insulating layer 350 may include an organic material.

[0263] The electrode wiring 360 may be disposed on the second insulating layer 350. The electrode wiring 360 may extend on the second insulating layer 350 and be electrically connected to the upper side (i.e., the second electrode 155) of the semiconductor light emitting device 150A. The upper surface of the second electrode 155 of the semiconductor light emitting device 150A may be located on the same horizontal line as the upper surface of the second insulating layer 350. In this case, the electrode wiring 360 may be deposited on the substrate 310 and patterned so that the electrode wiring 360 may have a straight line pattern and may be disposed on the second insulating layer 350 and the second electrode 155 of the semiconductor light emitting device 150A.

[0264] By completing this electrical connection, the semiconductor light emitting device 150A can emit light by a voltage (or current) supplied to the electrode wiring 360 , the first assembly wiring 321 , and / or the second assembly wiring 322 .

[0265] Fig.23 1 shows the brightness of the semiconductor light emitting device in the display device according to the comparative example and the embodiment. The comparative example is a case where no reflective layer is provided around the light emitting layer 150a, and the embodiment is a case where a reflective layer is provided around the light emitting layer 150a. It can be seen that compared with the comparative example ( Fig.23 Compared with (a)), in Example ( Fig.23 The brightness obtained in (b) is much higher.

[0266] Fig.21 is a cross-sectional view showing a display device according to a second embodiment. Fig. 22is a cross-sectional view showing a backplane substrate according to a second embodiment. The second embodiment is the same as the first embodiment except for the side connection of the semiconductor light emitting device 150A. In the second embodiment, components having the same structure, shape and / or function as the first embodiment are given the same figure marks, and detailed description is omitted.

[0267] refer to Fig.21 The display device 301 according to the second embodiment may include a substrate 310, a first assembly wiring 321, a second assembly wiring 322, a first insulating layer 330 and a semiconductor light emitting device 150A, a connecting electrode 370, a second insulating layer 350, and an electrode wiring 360. The display device 301 according to the second embodiment may include more components than these.

[0268] The semiconductor light emitting device may be the semiconductor light emitting device 150A according to the first embodiment, but the semiconductor light emitting devices 150B to 150E according to the second to fifth embodiments may also be similarly applied to the display device 301 according to the second embodiment.

[0269] Can be used Fig. 22 The display device 301 according to the second embodiment is manufactured by using the back panel substrate 301A shown. That is, the semiconductor light emitting device 150A can be assembled into the assembly hole 340H of the back panel substrate 301A using a self-assembly process. Afterwards, after removing the isolation ribs 340 on the back panel substrate 301A, the connecting electrode 370, the second insulating layer 350 and the electrode wiring 360 can be formed by subsequent processes, so that the display device 301 according to the second embodiment can be manufactured.

[0270] The connection electrode 370 may be formed along the periphery of the semiconductor light emitting device 150A. Since the isolation rib 340 is removed, a space margin for forming the connection electrode 370 increases, and thus the connection electrode 370 may be easily formed without electrical disconnection.

[0271] The connection electrode 370 may electrically connect the semiconductor light emitting device 150A to the first assembly wiring 321 and / or the second assembly wiring 322 .

[0272] The insulating layer 157 (i.e., the lower side of the third insulating layer 157-3) of the semiconductor light emitting device 150A can be removed to expose the second metal layer 156-2. Afterwards, the first insulating layer 330 can be removed along the periphery of the semiconductor light emitting device 150A in the assembly hole 340H, so that the first assembly wiring 321 and / or the second assembly wiring 322 can be exposed. Afterwards, the connecting electrode 370 can be formed along the periphery of the semiconductor light emitting device 150A, so that the first electrode 154 of the semiconductor light emitting device 150A can be connected to the first assembly wiring 321 and / or the second assembly wiring 322 through the connecting electrode 370. For example, since the connecting electrode 370 is electrically connected to the second metal layer 156-2 and the first electrode 154, the electrical area (electrical area) of the connecting electrode 370 can be increased. Therefore, the electrical characteristics or optical characteristics of the semiconductor light emitting device 150A can be improved. That is, it can be driven at a low voltage, and the lighting efficiency and optical brightness can be improved.

[0273] The connection electrode 370 may be formed by electroplating or sputtering. The display device may be a display panel. That is, in this embodiment, the display device and the display panel may be understood as having the same meaning. In this embodiment, the display device in a practical sense may include a display panel and a controller (or processor) capable of controlling the display panel to display an image.

[0274] This embodiment can be used in the display field for displaying images or information. This embodiment can be used in the display field for displaying images or information using semiconductor light emitting devices. The semiconductor light emitting device can be a micron-scale semiconductor light emitting device or a nano-scale semiconductor light emitting device.

[0275] For example, the present embodiment can be used in televisions, signboards, mobile terminals (such as handheld phones and smart phones), displays (such as laptops and desktop computers), head-up displays (HUDs) for cars, backlight units for displays, XR (extended reality) (such as AR, VR, MR (mixed reality)), etc.

[0276] Various embodiments described herein can be implemented in a computer-readable medium using, for example, software, hardware, or some combination of the above. For example, the embodiments described herein can be implemented in one or more of an application-specific integrated circuit (ASIC), a digital signal processor (DSP), a digital signal processing device (DSPD), a programmable logic device (PLD), a field programmable gate array (FPGA), a processor, a controller, a microcontroller, a microprocessor, other electronic units designed to perform the functions described herein, or a selective combination of the above. In some cases, these embodiments are implemented by a controller. That is, the controller is a hardware embedded processor that executes an appropriate algorithm (e.g., a flow chart) to perform the functions, and therefore has sufficient structure. In addition, embodiments such as programs and functions can be implemented with separate software modules, each of which performs at least one of the functions and operations. The software code can be implemented with a software application written in any suitable programming language. In addition, the software code can be stored in a memory and executed by a controller, so that the controller becomes a dedicated controller specially configured to perform the functions and algorithms. Therefore, the structure of the components shown in the accompanying drawings is sufficient to implement appropriate algorithms to perform the functions.

[0277] To this end, the present disclosure proposes the following solutions:

[0278] Solution 1. A semiconductor light emitting device, comprising:

[0279] Luminescent layer;

[0280] A first electrode, located at the lower side of the light-emitting layer;

[0281] A second electrode is located on the upper side of the light-emitting layer;

[0282] an insulating layer located on a side portion of the light emitting layer, overlapping at least a portion of the first electrode, and overlapping at least a portion of the second electrode; and

[0283] A plurality of metal layers are spaced apart from each other in the insulating layer, the plurality of metal layers comprising:

[0284] A first metal layer including a reflective layer; and

[0285] The second metal layer includes a magnetic layer.

[0286] Solution 2. The semiconductor light-emitting device according to Solution 1, wherein the light-emitting layer comprises:

[0287] a first conductive type semiconductor layer;

[0288] an active layer, located on the first conductive type semiconductor layer; and

[0289] The second conductive type semiconductor layer is located on the active layer.

[0290] Solution 3. The semiconductor light emitting device according to Solution 2,

[0291] The second metal layer is spaced apart from the first metal layer outwardly.

[0292] Solution 4. The semiconductor light emitting device according to Solution 3, wherein the insulating layer comprises:

[0293] A first insulating layer, located between the light-emitting layer and the first metal layer;

[0294] a second insulating layer, located between the first metal layer and the second metal layer; and

[0295] The third insulating layer is located on the outer surface of the second metal layer.

[0296] Solution 5. The semiconductor light emitting device according to Solution 4, wherein the plurality of metal layers further comprises:

[0297] The third metal layer is spaced apart from the second metal layer.

[0298] Solution 6. The semiconductor light-emitting device according to Solution 5, wherein:

[0299] The third metal layer includes a reflective layer.

[0300] Option 7. The semiconductor light-emitting device according to Option 5, wherein the upper side of at least one or more of the first metal layer, the second metal layer and the third metal layer is flush with the upper surface of the second electrode.

[0301] Option 8. The semiconductor light-emitting device according to Option 5, wherein the upper side of at least one or more of the first metal layer, the second metal layer and the third metal layer is higher than the upper surface of the second conductive semiconductor layer.

[0302] Option 9. The semiconductor light-emitting device according to Option 5, wherein an upper side of at least one or more of the first metal layer, the second metal layer and the third metal layer is in contact with the third insulating layer.

[0303] Solution 10. The semiconductor light emitting device according to Solution 5, wherein the insulating layer further comprises:

[0304] The fourth insulating layer is located between the second metal layer and the third metal layer.

[0305] Embodiment 11. The semiconductor light-emitting device according to Embodiment 10, wherein an upper side of at least one or more of the first insulating layer, the second insulating layer, and the fourth insulating layer is in contact with the third insulating layer.

[0306] Solution 12. The semiconductor light emitting device according to Solution 10, wherein an edge region of the first electrode is spaced apart from the first metal layer, the second metal layer, and the third metal layer, and

[0307] A space is formed between lower sides of at least two or more of the first insulating layer, the second insulating layer, the third insulating layer, and the fourth insulating layer.

[0308] Option 13. The semiconductor light-emitting device according to Option 4, wherein an edge region of the first electrode is separated from the first metal layer by the first insulating layer therebetween.

[0309] Solution 14. The semiconductor light emitting device according to Solution 5, wherein the plurality of metal layers further comprises:

[0310] The fourth metal layer is spaced apart from the first metal layer.

[0311] Option 15. The semiconductor light-emitting device according to Option 14, wherein the fourth metal layer is disposed between the light-emitting layer and the first insulating layer.

[0312] Option 16. A semiconductor light-emitting device according to Option 14, wherein the fourth metal layer includes an ohmic layer.

[0313] Option 17. A semiconductor light-emitting device according to Option 14, wherein an upper side of the fourth metal layer is lower than the active layer.

[0314] Option 18. A semiconductor light-emitting device according to Option 14, wherein an edge region of the first electrode is electrically connected to at least one or more of the first metal layer, the second metal layer, the third metal layer and the fourth metal layer.

[0315] Option 19. A semiconductor light-emitting device according to Option 1, wherein each of the multiple metal layers has a columnar structure.

[0316] Solution 20. A display device comprising:

[0317] a substrate including a plurality of sub-pixels constituting a pixel; and

[0318] A plurality of semiconductor light emitting devices are located in the plurality of sub-pixels, each of the semiconductor light emitting devices comprising:

[0319] Luminescent layer;

[0320] a first electrode, located on the lower side of the light-emitting layer;

[0321] a second electrode, located on the upper side of the light-emitting layer;

[0322] an insulating layer located on a side portion of the light emitting layer, the insulating layer overlapping at least a portion of the first electrode and overlapping at least a portion of the second electrode; and

[0323] a plurality of metal layers spaced apart from each other in the insulating layer,

[0324] The plurality of metal layers include:

[0325] a first metal layer including a reflective layer;

[0326] a second metal layer including a magnetic layer; and

[0327] The third metal layer includes a reflective layer.

[0328] Solution 21. The display device according to Solution 20, wherein the insulating layer comprises:

[0329] A first insulating layer, located between the light-emitting layer and the first metal layer;

[0330] a second insulating layer, located between the first metal layer and the second metal layer; and

[0331] The third insulating layer is located on the outer surface of the second metal layer.

[0332] Solution 22. The display device according to Solution 21, wherein the insulating layer comprises:

[0333] A first insulating layer, located between the light-emitting layer and the first metal layer;

[0334] a second insulating layer, located between the first metal layer and the second metal layer; and

[0335] The third insulating layer is located on the outer surface of the second metal layer.

[0336] Solution 23. A method for mounting a semiconductor light emitting device on a substrate, comprising:

[0337] placing a plurality of semiconductor light emitting devices in a chamber filled with a fluid;

[0338] Disposing a substrate above the chamber, the substrate comprising a plurality of assembly holes corresponding to the plurality of semiconductor light emitting devices;

[0339] The plurality of semiconductor light emitting devices are moved to the plurality of assembly holes by generating a magnetic field or generating an electric field.

[0340] The present invention includes various modifications to each example and embodiment discussed herein. According to the present invention, one or more features in one embodiment or example described above may be applied to another embodiment or example described above. The features of one or more embodiments or examples described above may be combined into each of the embodiments or examples described above. Any combination of all or part of one or more embodiments or examples of the present invention is also a part of the present invention.

[0341] Since the present invention can be implemented in several forms without departing from its spirit or essential characteristics, it should also be understood that, unless otherwise specified, the above-mentioned embodiments are not limited to any details described above, but should be broadly interpreted within the spirit and scope defined by the appended claims. Therefore, all changes and modifications within the scope of the claims or the scope of equivalence should be covered by the appended claims.

[0342] The above detailed description should not be considered to be restrictive in all aspects, but should be considered to be illustrative. The scope of the present embodiment should be determined by reasonable interpretation of the appended claims, and all changes within the equivalent scope of the embodiment are included in the scope of the embodiment.

Claims

1. A semiconductor light emitting device, comprising: Luminescent layer; A first electrode, located at the lower side of the light-emitting layer; A second electrode is located on the upper side of the light-emitting layer; an insulating layer, located on a side portion of the light emitting layer, overlapping at least a portion of the first electrode, and overlapping at least a portion of the second electrode; as well as A plurality of metal layers are spaced apart from each other in the insulating layer, the plurality of metal layers comprising: a first metal layer including a reflective layer; as well as The second metal layer includes a magnetic layer.

2. The semiconductor light emitting device according to claim 1, wherein: The light-emitting layer comprises: a first conductive type semiconductor layer; an active layer, located on the first conductive type semiconductor layer; and The second conductive type semiconductor layer is located on the active layer.

3. The semiconductor light emitting device according to claim 2, in, The second metal layer is spaced outwardly from the first metal layer.

4. The semiconductor light emitting device according to claim 3, wherein: The insulating layer comprises: A first insulating layer, located between the light-emitting layer and the first metal layer; a second insulating layer, located between the first metal layer and the second metal layer; and The third insulating layer is located on the outer surface of the second metal layer.

5. The semiconductor light emitting device according to claim 4, wherein: The plurality of metal layers further comprises: The third metal layer is spaced apart from the second metal layer.

6. The semiconductor light emitting device according to claim 5, wherein: The third metal layer includes a reflective layer.

7. The semiconductor light emitting device according to claim 5, wherein: The insulating layer also includes: The fourth insulating layer is located between the second metal layer and the third metal layer.

8. A display device, comprising: A substrate including a plurality of sub-pixels constituting a pixel; as well as A plurality of semiconductor light emitting devices are located in the plurality of sub-pixels, each of the semiconductor light emitting devices comprising: Luminescent layer; a first electrode, located on the lower side of the light-emitting layer; a second electrode, located on the upper side of the light-emitting layer; an insulating layer located on a side portion of the light emitting layer, the insulating layer overlapping at least a portion of the first electrode and overlapping at least a portion of the second electrode; and a plurality of metal layers spaced apart from each other in the insulating layer, The plurality of metal layers include: a first metal layer including a reflective layer; a second metal layer including a magnetic layer; and The third metal layer includes a reflective layer.

9. The display device according to claim 8, wherein: The insulating layer comprises: A first insulating layer, located between the light-emitting layer and the first metal layer; a second insulating layer, located between the first metal layer and the second metal layer; and The third insulating layer is located on the outer surface of the second metal layer.

10. A method for mounting a semiconductor light emitting device on a substrate, comprising: placing a plurality of semiconductor light emitting devices in a chamber filled with a fluid; Disposing a substrate above the chamber, the substrate comprising a plurality of assembly holes corresponding to the plurality of semiconductor light emitting devices; The plurality of semiconductor light emitting devices are moved to the plurality of assembly holes by generating a magnetic field or generating an electric field.

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