Electron beam apparatus for surface treatment

Abstract

The present description relates to an electron beam apparatus (100) comprising:-a processing chamber (130) having a longitudinal direction (Z); -at least one electron beam source (110), each source being adapted to emit an electron beam in a beam plane (PF) substantially transverse to the longitudinal direction, in order to induce a plasma or evaporation point in the processing chamber for processing a surface of the component (106), said at least one electron beam source being external to the processing chamber; -a pumping chamber (120) connected to a first vacuum pump (126), the processing chamber and at least one electron beam source, the pumping chamber being positioned between the processing chamber and the at least one electron beam source and being adapted to perform differential vacuum pumping of the processing chamber; -at least one first aperture (122) for passing the electron beam between the processing chamber and the pumping chamber; and-at least one second aperture (124) for passing the electron beam between the pumping chamber and the at least one electron beam source.

Description

Technical Field

[0001] The present disclosure generally relates to an electron beam apparatus for treating a surface, for example for deposition of a thin layer on the surface, cleaning, layer densification and / or surface etching. Background Art

[0002] The treatment of a surface (e.g. a substrate surface, or more generally a component surface) generally corresponds to a mechanical, chemical, electrochemical and / or physical operation which results in a change in the appearance or function of the surface in order to adapt it to given conditions of use. By extension, in the following disclosure, etching techniques are also included in the surface treatment.

[0003] Surface treatment includes techniques for coating surfaces, such as metal coating techniques, and in particular techniques for the deposition of thin films on surfaces.

[0004] There are different techniques for performing thin film deposition on a surface, such as a substrate surface, in particular physical vapor deposition (PVD) techniques.

[0005] Among these techniques, electron beam physical vapor deposition (EBPVD) is a physical vapor deposition technique in which a target under high vacuum is bombarded by an electron beam, usually emitted by a tungsten filament. The electron beam converts atoms or molecules from the target into the gas phase. At least a portion of these atoms or molecules are then precipitated in solid form on the surface to be treated, covering the surface with a thin film of these precipitated atoms or molecules. A disadvantage of this technique is the degradation of the filament, which can, for example, lead to uneven evaporation rates. In addition, the limitation is to have a high vacuum, sometimes below 10 -4 millibar.

[0006] The sputtering technique involves directing a plasma containing relatively heavy charged particles (e.g., argon ions (Ar+) derived from at least partially ionized argon (Ar)) toward a target to sputter particles of one or more materials forming the target. At least a portion of these sputtered particles are deposited on a surface (e.g., the surface of a substrate) to form a thin film of (one or more) materials thereon. The plasma can be formed, for example, by applying electromagnetic radiation to the gas to be ionized at low pressure. A limitation of this technique is to avoid contamination between the plasma source and the particle sputtering area on the surface, and another limitation is to manage a relatively high vacuum, for example, less than or equal to 10 -2 millibar.

[0007] Furthermore, these various techniques, as well as other techniques not described but known to those skilled in the art, are implemented by dedicated equipment that is typically not universal, that is, is typically not transferable from one technology to another. Summary of the invention

[0008] There is a need for an apparatus suitable for surface treatment which is able to implement different techniques (universal surface treatment apparatus) such as being able to implement different thin film deposition techniques and also being able to clean the surface, densify a surface layer and / or perform etching from the surface.

[0009] In particular, it would be desirable to have an electron beam apparatus for treating surfaces, wherein the electron beam can be formed without any filament.

[0010] Embodiments overcome all or part of the disadvantages of known surface treatment equipment, especially known thin film deposition equipment.

[0011] An embodiment provides an electron beam device, the device comprising:

[0012] - a process chamber having a longitudinal direction;

[0013] - at least one electron beam source, each source being suitable for emitting an electron beam in a beam plane substantially transverse to the longitudinal direction so as to induce a plasma or an evaporation point in a treatment chamber for treating a surface of a component; - at least one first orifice for the electron beam to pass through the treatment chamber, the diameter of the smallest circle inscribed in the first orifice being less than or equal to one eighth, for example less than or equal to one tenth, of the smallest dimension of a cross section of the treatment chamber taken in the beam plane.

[0014] According to an embodiment, a processing chamber includes a target.

[0015] According to an embodiment, a processing chamber includes a first support base adapted to support a target.

[0016] According to an embodiment, the first supporting base is movable.

[0017] According to an embodiment, the first supporting base comprises or consists of a crucible, for example a cooling crucible.

[0018] According to an embodiment, the processing chamber comprises a second supporting base adapted to support a component to be processed.

[0019] According to an embodiment, the second supporting base is movable.

[0020] According to an embodiment, at least one electron beam source is external to the process chamber.

[0021] According to an embodiment, the apparatus comprises a deflection device, such as an electromagnet or a permanent magnet, adapted to deflect the electron beam in the process chamber.

[0022] According to an embodiment, the deflection device is movable.

[0023] According to an embodiment, the apparatus comprises a pumping chamber coupled to a first vacuum pump and to a process chamber, the pumping chamber being adapted to perform differential vacuum pumping of the process chamber.

[0024] According to an embodiment, the process chamber is delimited by walls forming a cylindrical or parallelepiped body, and the pumping chamber is positioned against the side walls of the body, either inside or outside said body.

[0025] According to an embodiment, the pumping chamber is coaxial with the process chamber.

[0026] According to an embodiment, the at least one first aperture is between the pumping chamber and the process chamber, and the device comprises at least one second aperture for the electron beam to pass between the pumping chamber and the at least one electron beam source.

[0027] According to an embodiment, the diameter of the smallest circle inscribed in the at least one second aperture is smaller than or equal to one eighth, such as smaller than or equal to one tenth, of the smallest dimension of the cross section of the process chamber taken in the beam plane.

[0028] According to an embodiment, at least one electron beam source comprises an electron generation chamber and a tube between the electron generation chamber and the process chamber.

[0029] According to an embodiment, the tube is coupled to the electron generation chamber and the pumping chamber, and the at least one second aperture is between the pumping chamber and the tube.

[0030] According to an embodiment, at least one electron beam source comprises a focusing device, such as an electromagnet, adapted to focus the electron beam and, for example, direct it towards the process chamber.

[0031] According to an embodiment, the apparatus comprises: a second vacuum pump coupled to the process chamber and / or a third vacuum pump coupled to the at least one electron beam source.

[0032] According to an embodiment, the apparatus comprises: a plurality of electron beam sources external to the process chamber.

[0033] According to a particular embodiment, at least two of the electron beam sources are adapted to emit electrons along two mutually parallel beam planes.

[0034] According to an embodiment, the at least one first aperture corresponds to an aperture of a diaphragm and, in some cases, the at least one second aperture corresponds to an aperture of the diaphragm.

[0035] According to an embodiment, the device comprises:

[0036] - a source for biasing the target to a voltage ranging from 0 to 10 kV, preferably from 2 kV to 5 kV;

[0037] and / or

[0038] - Elements for cooling the target.

[0039] An embodiment provides an electron beam device, comprising:

[0040] - a process chamber having a longitudinal direction;

[0041] - at least one electron beam source, each source being adapted to emit an electron beam in a beam plane substantially transverse to the longitudinal direction so as to induce a plasma or vaporization spot in the treatment chamber for treating a surface of the component;

[0042] The at least one electron beam source is external to the processing chamber;

[0043] a pumping chamber coupled to the first vacuum pump, the process chamber and at least one electron beam source, the pumping chamber being positioned between the process chamber and the at least one electron beam source and being adapted to perform the process

[0044] Differential vacuum pumping of the processing chamber;

[0045] - at least one first aperture for passage of the electron beam between the process chamber and the pumping chamber; and

[0046] - at least one second aperture for the passage of the electron beam between the pumping chamber and the at least one electron beam source.

[0047] According to an embodiment,

[0048] - the diameter of the smallest circle inscribed in the at least one first orifice is less than or equal to one eighth, for example less than or equal to one tenth, of the smallest dimension of the cross section of the process chamber taken in the beam plane; and / or

[0049] The diameter of the smallest circle inscribed in the at least one second orifice is smaller than or equal to one eighth, for example smaller than or equal to one tenth, of the smallest dimension of the cross section of the process chamber taken in the beam plane.

[0050] According to an embodiment, the at least one first aperture is positioned in a side wall of the process chamber such that the electron beam emitted by the at least one electron beam source can enter the process chamber through the at least one first aperture.

[0051] According to an embodiment, the at least one second aperture is positioned in a side wall of the pumping chamber such that the electron beam emitted by the at least one electron beam source can enter the pumping chamber through the at least one second aperture.

[0052] According to an embodiment, the at least one electron beam source, the process chamber and the pumping chamber constitute a closed assembly.

[0053] According to an embodiment, the processing chamber comprises a target adapted to emit particles towards the component under the action of an electron beam or plasma so as to induce a thin film deposition process on the component by a sputtering technique or an electron beam vapor deposition technique.

[0054] According to an embodiment, the process chamber comprises a first support base adapted to support the target, the first support base being, for example, movable.

[0055] According to an embodiment, the first supporting base comprises or consists of a crucible, for example a cooling crucible.

[0056] According to an embodiment, the device further comprises:

[0057] - a source for biasing the target to a voltage ranging from 0 to 10 kV, preferably from 2 kV to 5 kV;

[0058] and / or

[0059] - Elements for cooling the target.

[0060] According to an embodiment, the process chamber comprises a second support base adapted to support the component to be processed, the second support base being for example movable.

[0061] According to an embodiment, the apparatus comprises a deflection device, such as an electromagnet or a permanent magnet, adapted to deflect the electron beam in the process chamber, the deflection device being for example movable.

[0062] According to an embodiment, the process chamber is delimited by the walls of a cylindrical or parallelepiped body and the pumping chamber is positioned against the side walls of the body, inside or outside the body; the pumping chamber is for example coaxial with the process chamber.

[0063] According to an embodiment, at least one electron beam source comprises an electron generation chamber and tubes between the electron generation chamber and the process chamber; each tube is coupled to a pumping chamber; and at least one second aperture is between the pumping chamber and the tubes of the at least one electron beam source.

[0064] According to an embodiment, at least one electron beam source comprises a focusing device, such as an electromagnet, adapted to focus the electron beam and, for example, direct it towards the process chamber.

[0065] According to an embodiment, the apparatus comprises: a second vacuum pump coupled to the process chamber and / or a third vacuum pump coupled to the at least one electron beam source.

[0066] According to an embodiment, the apparatus comprises: a plurality of electron beam sources external to the process chamber.

[0067] According to an embodiment, at least two of the electron beam sources are adapted to emit electrons along the same beam plane or along two mutually parallel beam planes.

[0068] According to an embodiment, the at least one first aperture and / or the at least one second aperture corresponds to an aperture of the membrane.

[0069] According to an embodiment, the device is adapted to implement the following:

[0070] - Thin film deposition by sputtering;

[0071] - Thin film deposition by electron beam vapor deposition;

[0072] - cleaning with the aid of plasma;

[0073] - layer densification by means of plasma; and / or

[0074] -Plasma etching. BRIEF DESCRIPTION OF THE DRAWINGS

[0075] The foregoing features and advantages, as well as other features and advantages, will be described in detail in the following disclosure of specific embodiments, which are given by way of illustration and not limitation, with reference to the accompanying drawings, in which:

[0076] Figure 1 is a simplified cross-sectional view of an electron beam apparatus according to a first embodiment;

[0077] Figure 2 is a simplified cross-sectional view of an electron beam apparatus according to a second embodiment;

[0078] Figure 3 is with Figure 2 A top view of an electron beam device similar to the device of FIG.

[0079] Figure 4 is a top view of an electron beam apparatus according to a third embodiment. DETAILED DESCRIPTION

[0080] In the various figures, the same features are indicated by the same reference numerals. In particular, common structural and / or functional features in various embodiments may have the same reference numerals, and may be provided with exactly the same structure, dimensions, and material properties.

[0081] For the sake of clarity, only those steps and elements useful for understanding the described embodiments are shown and described in detail. In particular, current or voltage supply systems, gas supply systems, systems for possibly biasing the target and / or the surface to be processed are not described in detail, unless otherwise specified, the described embodiments are compatible with conventional systems. Similarly, the current intensity, the supply voltage or the level of the bias voltage are not described in detail.

[0082] Unless otherwise indicated, when referring to two elements being connected together, this means a direct connection without any intermediate elements except conductors, and when referring to two elements being coupled together, this means the two elements may be connected or they may be coupled via one or more other elements.

[0083] In the following description, when referring to absolute position qualifiers, such as "front", "back", "top", "bottom", "left", "right", etc., or relative position qualifiers, such as "top", "bottom", "upper part", "lower part", etc., or orientation qualifiers, such as "horizontal", "vertical", etc., unless otherwise specified, it refers to the orientation of the drawing or the orientation of the electron beam device in its normal use position.

[0084] In the following description, when referring to an electron beam plane (or beam plane), it refers to a plane in which one or more electron beams are emitted by one or more electron beam sources. When there are multiple electron beam sources, they can be configured to emit electron beams along the same beam plane or along multiple beam planes that are substantially parallel to each other. When referring to the longitudinal direction, it refers to a direction perpendicular to the (one or more) beam planes. The cross section of the processing chamber corresponds to a cross section of the processing chamber along a plane (transverse plane) perpendicular to the longitudinal direction. When the transverse plane corresponds to the beam plane, it is referred to as a cross section taken in the beam plane.

[0085] Unless otherwise specified, the expressions “about”, “approximately”, “substantially” and “in the order of magnitude of” mean plus or minus 10%, preferably plus or minus 5%.

[0086] Figure 1 is a simplified cross-sectional view of an electron beam apparatus 100 according to the first embodiment.

[0087] The apparatus 100 comprises three separate chambers:

[0088] - an electron generation chamber 112 having a first volume V1;

[0089] - a pumping chamber 120 having a second volume V2; and

[0090] A process chamber 130 having a third volume V3.

[0091] The electron generating chamber 112 constitutes a part of an electron beam source 110 (or electron source) which is adapted to emit at least one electron beam F in the direction of a beam plane PF.

[0092] The electron beam source 110, the processing chamber 130 and the pumping chamber 120 constitute a closed assembly, preferably a sealed assembly.

[0093] The pumping chamber 120 is coupled to and positioned between the process chamber 130 and the electron beam source 110. For example, one common wall separates the pumping chamber 120 and the process chamber 130, and another common wall separates the pumping chamber 120 and the electron beam source 110.

[0094] The electron beam source 110 preferably does not comprise a filament. The electron beam source 110 may comprise or consist of, for example, a plasma source, wherein the plasma is obtained by the interaction between high frequency electromagnetic radiation and a low pressure gas, such as the plasma source described in patent application FR 3 0 6 2 7 7 0 A 1. Thus, the plasma source generating the electrons and thus forming the electron source may be placed in a vacuum different from that of the process chamber, thereby providing freedom in the choice of pressure and / or gas properties for both the process chamber and the plasma source.

[0095] exist Figure 1 In the embodiment of FIG. 1 , the processing chamber 130 is located between the cylinder 10 (cylindrical body) and the pumping chamber 120 .

[0096] The processing chamber 130 is closed by a bottom wall 131 corresponding to the central part of the lower bottom of the cylinder 10, a top wall 133 corresponding to the upper bottom of the cylinder 10, and a side wall 132, which has a first part shared with the upper part of the side wall of the cylinder 10 (coupling the lower bottom and the upper bottom of the cylinder), a second part shared with the top wall 128 of the pumping chamber 120, and a third part shared with the first side wall 121 (inner wall) of the pumping chamber 120.

[0097] In the present embodiment, the pumping chamber 120 is positioned within the cylindrical body 10 and has an annular shape coaxial with the cylindrical body.

[0098] The pumping chamber 120 is enclosed by a second side wall 123 (outer side wall) shared with the lower portion of the side wall of the cylindrical body 10, an inner side wall 121, a top wall 128, and a bottom wall 129, the top and bottom walls of which couple the inner and outer side walls of the pumping chamber. The inner side wall 121 and the top wall 128 of the pumping chamber 120 are shared with the side wall 132 of the processing chamber 130. The bottom wall 129 of the pumping chamber 120 corresponds to the peripheral portion of the lower bottom of the cylindrical body 10.

[0099] Thus, the process chamber 130 is defined by the space between the cylindrical body 10 and the pumping chamber 120. In other words, the volume V3 of the process chamber 130 substantially corresponds to the volume of the cylindrical body 10 minus the volume V2 of the pumping chamber 120.

[0100] The top wall 128 of the pumping chamber 120 is shown to be inclined relative to the beam plane PF. As a variation, the top wall 128 of the pumping chamber 120 may be substantially parallel to the beam plane PF. According to another variation, the top wall 128 of the pumping chamber 120 may correspond to a portion of the upper base of the cylinder 10, that is, the inner wall 121 of the pumping chamber 120 may extend all the way to the upper base of the cylinder 10.

[0101] The cylinder 10 is shown as a straight circular cylinder, as may also be described below. Figure 3 In this mode, the longitudinal direction Z (or axial direction) of the process chamber 130 corresponds to the axis of the cylinder 10. The minimum cross-sectional diameter (minor diameter) of the portion of the process chamber 130 surrounded by the pumping chamber is represented by D3, and the cross-sectional diameter (major diameter) of the portion of the process chamber 130 not surrounded by the pumping chamber is represented by D4. D3 is smaller than D4.

[0102] Other shapes and configurations of the process chamber and pumping chamber are possible. For example, the body may be cylindrical and non-circular, or it may be parallelepipedal, as described, for example, below. Figure 4 As shown, or may have any other suitable shape. The pumping chamber may be positioned inside or outside the cylindrical or parallelepiped body. For example, the pumping chamber may be positioned outside the body, against the side wall of the body, which then corresponds to the side wall of the processing chamber.

[0103] The pumping chamber 120 is coupled to a first vacuum pump 126. Using a pumping chamber separate from the process chamber allows for differential pumping.

[0104] Furthermore, the fact that the pumping chamber 120 is positioned between the processing chamber 130 and the electron beam source 110 forms an intermediate pumping chamber 120 between the electron generation chamber 112 and the processing chamber 130. For example, the pressure P2 of the pumping chamber 120 is between the pressure P1 in the electron generation chamber 112 and the pressure P3 in the processing chamber 130. This makes it possible to set the pressure in the electron generation chamber 112 (for the generation of electrons) and the pressure in the processing chamber 130 (for the processing of the substrate 106) differently, as explained below, and thus optimize the operating pressures in the electron generation chamber 112 and the processing chamber 130.

[0105] The process chamber 130 includes a process gas inlet 138 coupled to a process gas supply (not shown). Examples of process gases are rare gases such as He, Ne, Ar, Kr or Xe or reactive gases such as O2, N2, F2, CH4, SF6.

[0106] A second vacuum pump 142 may be coupled to the process chamber 130, for example to control the ultimate vacuum in the process chamber, particularly in evaporation mode. Deposition of thin films by evaporation sometimes requires a very high vacuum (typically less than 10 -5 mbar), which may require the presence of enhanced pumping dedicated to the process chamber.

[0107] The process chamber 130 is adapted to support the target 104, for example by means of a first support base 134 assembled inside the process chamber. The first support base 134 may be movable along the longitudinal direction Z, for example by means of a first motor 135. This may enable a first distance Z1 between the target 104 and the beam plane PF to be varied in the longitudinal direction. More generally, the target may be movable in translation and / or rotation, for example to control the position and shape of a wear area of ​​the target. A single target is shown, but the process chamber may contain multiple targets, for example multiple targets on the first support base.

[0108] The target 104 may be placed in a crucible, which may constitute or be part of the first support pedestal 134, especially if it is used in an evaporative deposition technique.

[0109] The process chamber 130 is suitable for supporting a component having at least one surface to be processed, such as a substrate 106. A second support base 136 may be assembled inside the process chamber to support the substrate 106. The second support base 136 may be movable in the longitudinal direction Z, for example by means of a second motor 137. This may enable a second distance Z2 between the substrate 106 and the beam plane PF to be varied in the longitudinal direction. More generally, the component to be processed may be movable in a translational and / or rotational manner.

[0110] The pumping chamber 120 is in communication with the processing chamber 130 via a first orifice 122 and is in communication with the electron beam source 110 via a second orifice 124. The first orifice and the second orifice are preferably in the electron beam emission direction ( Figure 1 Therefore, the electron beam emitted by the electron beam source 110 in the direction X passes through the first orifice 122 and the second orifice 124 via the pumping chamber 120 into the processing chamber 130.

[0111] In the case where there are multiple electron beam emission directions in the beam plane PF, multiple first orifices and second orifices are then preferably arranged, each first orifice preferably being aligned with a second orifice along one of the emission directions, so that each electron beam emitted in a given emission direction can pass through the pumping chamber into the processing chamber through the first orifice and the second orifice aligned in said emission direction.

[0112] The first orifice 122 may be located in the inner sidewall 121 of the pumping chamber 120, that is, in the sidewall 132 of the process chamber 130, and the second orifice 124 may be located in the outer sidewall 123 of the pumping chamber 120. The inner and outer sidewalls of the pumping chamber are opposite in the emission direction X of the electron beam.

[0113] There may be a plurality of first and second apertures, particularly if there are a plurality of electron beam sources, such as in combination with Figure 2 shown.

[0114] In the case where there are a plurality of first and second orifices, the first orifices may be positioned along a first circumference of the inner sidewall 121 of the pumping chamber 120, corresponding to a first circumference of the sidewall 132 of the process chamber 130, and the second orifices may be positioned along a second circumference of the outer sidewall 123 of the pumping chamber 120. For example, the first circumference and the second circumference are concentric.

[0115] More generally, for example in a variant where the pumping chamber is outside the cylindrical or parallelepiped body, each first orifice may be positioned in a wall common to the process chamber and the pumping chamber, and each second orifice may be positioned in another wall common to the pumping chamber and the electron beam source.

[0116] As a variant, each first orifice may be an orifice of a first diaphragm assembled to the inner side wall of the pumping chamber (that is to say, the side wall of the process chamber), and / or each second orifice may be an orifice of a second diaphragm assembled to the outer side wall of the pumping chamber. The inner side wall may then comprise an opening larger than the first orifice to integrate the first diaphragm, and / or the outer side wall may then comprise an opening larger than the second orifice to integrate the second diaphragm. This variant makes it possible in particular to provide a variable orifice size according to the target application, for example to adjust the fluid conductance of the orifice.

[0117] The circle with the smallest diameter inscribed in each first orifice 122 is adapted to the size of the process chamber 130 , preferably to the size of a cross section of the process chamber taken in the beam plane. The same conditions may apply to the circle with the smallest diameter inscribed in the second orifice 124 .

[0118] The orifice may have a circular shape. In this case, the diameter of the circle is considered the orifice size.

[0119] Preferably, the diameter of the smallest circle inscribed in the first orifice 122 is less than or equal to 1 / 8, such as less than or equal to 1 / 10, such as less than or equal to 1 / 12, of the smallest dimension of the cross section of the process chamber 130 taken in the beam plane PF. In the example shown, this corresponds to the minor diameter D3 of the process chamber 130. The same condition may apply to the diameter of the smallest circle inscribed in the second orifice 124.

[0120] Such ratios for the aperture enable providing a differential vacuum between the electron beam source 110 and the processing chamber 130, and in particular between the electron generation chamber 112 and the processing chamber 130, while minimizing process chamber contamination of the electron generation chamber 112. A compromise can be found between the number of electrons injected into a beam of a given diameter after focusing and the maximum size of the aperture, which itself controls the differential pumping.

[0121] The first vacuum pump 126 enables a vacuum to be created in the pumping chamber 120 and in the processing chamber 130 via the first orifice 122 .

[0122] Thus, the first vacuum pump 126 , the injection of process gases, and in some cases the second vacuum pump 142 are able to control the pressure in the process chamber 130 .

[0123] The pressure in the process chamber 130 may be adapted according to the process technology implemented in the apparatus, for example: - for sputtering deposition, at 10 -3 mbar and 10 -1 Between millibars;

[0124] - For electron beam vapor deposition, at 10 -6 mbar and 10 -1 Between millibars.

[0125] exist Figure 1 In the embodiment shown, the electron generation chamber 112 is remote from the pumping chamber 120 and the processing chamber 130. The electron beam source 110 includes a tube 114, preferably hollow, coupling the electron generation chamber 112 and the pumping chamber 120. The second orifice 124 is then positioned between the pumping chamber 120 and the tube 114. A third passage orifice 113 is formed between the electron generation chamber 112 and the tube 114. The third orifice 113 is preferably aligned with the first orifice 122 and the second orifice 124 in the emission direction X of the electron beam.

[0126] As a variation, the electron generation chamber 112 may be adjacent to the pumping chamber 120 and / or the processing chamber 130. For example, the electron generation chamber 112 may not include a tube.

[0127] The electron beam chamber 112 also includes a source gas inlet 118 coupled to a source gas supply (not shown). Examples of source gases are rare gases He, Ne, Ar, Kr or Xe or reactive gases such as O2, N2, F2, CH4, SF6.

[0128] The electron beam source 110 also preferably includes an electron beam focusing device. It can be an electrostatic focusing device or a magnetic focusing device, such as an electromagnet 116 positioned around the tube 114 and coupled to a coil power supply (power supply not shown). The focusing device (e.g., electromagnet 116) is preferably adapted to generate a magnetic field parallel to the electron beam path in the tube 114, and can be adapted to conduct the electron beam to the processing chamber 130.

[0129] Although not shown, the electron beam source 110 may include an extraction grid and / or an acceleration grid, such as between the electron generation chamber 112 and the electromagnet 116 .

[0130] The first vacuum pump 126 may be adapted to create a vacuum in the electron generation chamber 112 via the pumping chamber 120 and the second orifice 124. The first vacuum pump 126 and the second orifice 124 may be sized depending on the desired vacuum.

[0131] As a variant or in addition, the electron beam source 110 may comprise a third vacuum pump 115 coupled to the electron generation chamber 112 and suitable for forming a higher vacuum in said chamber and / or for compensating for possible retroactive flows originating from the process chamber 130 .

[0132] In the tube 114 , the emitted electron beam F is directed in a direction X of a beam plane PF perpendicular to the longitudinal direction Z.

[0133] For some applications, the trajectory F1 of the electron beam in the processing chamber 130 can follow the same direction as the emitted electron beam, or at least not be directed in a specific direction. For example, the electron beam is not directed to the target 104. The electron beam can be suitable for generating a plasma with the aid of a process gas introduced into the processing chamber, such as a rare gas such as He, Ne, Ar, Kr or Xe or an active gas such as O2, N2, F2, CH4, SF6. The plasma can be directed to the substrate 106 to clean and / or etch it. The plasma can also be directed to the target 104 to strip particles therefrom, and the particles can be directed to the substrate 106 to perform thin film deposition by sputtering techniques.

[0134] For other applications, the trajectory F2 of the electron beam in the process chamber 130 can be deflected to follow a given direction in the process chamber. For example, the electron beam can be directed to the target 104. For example, the electron beam can be adapted to convert the target molecules into a gas phase. Then, at least a portion of these molecules are deposited in solid form on the substrate 106 to perform thin film deposition by electron beam vapor deposition techniques.

[0135] The device may comprise electron beam deflection means, such as an electromagnet or permanent magnet 140, adapted to deflect the electron beam in the process chamber 130. The deflection device may be at least partially positioned in the process chamber. As a variant, the deflection device may be positioned completely outside the process chamber.

[0136] The deflection device, such as the permanent magnet 140, may be movable along the longitudinal direction Z, for example by means of a third motor 139. More generally, the deflection device may be movable in translation and / or rotation and thus be able to control or not control the trajectory of the electron beam within a very wide energy range thereof, for example between 100 V and 50 kV.

[0137] The focusing device (eg the electromagnet 126) and the deflection device (eg the permanent magnet 140) are preferably adapted to form magnetic fields having a transverse direction, ie perpendicular with respect to each other.

[0138] The target may be made of copper, tantalum, or copper oxide or tantalum oxide, or any other solid or even liquid material (eg, metal or oxide material) capable of inducing a sputtering or evaporation process.

[0139] Depending on the processing technique implemented in the apparatus, the target and / or the substrate may be biased. For the substrate, the bias voltage may be typically a few tens of volts, for example in plasma cleaning or plasma layer densification mode, and / or for the target, any bias voltage enabling higher energies than the sputtering or evaporation threshold to be obtained, typically in the range from 100 V to 10 kV.

[0140] Figure 2 is a simplified cross-sectional view of an electron beam apparatus 200 according to a second embodiment. Figure 1 The device 100 is different in that it includes a plurality of electron beam sources, a first source 110 and a second source 210, such as Figure 2 As shown. The first permanent magnet 140 can be adapted to deflect the electron beam from the first source 110, and the second permanent magnet 240 can be adapted to deflect the electron beam originating from the second source 210. The permanent magnets can be positioned individually on a support, or on a common support 241, as shown, each support being movable, for example, by means of a motor 239 (common in the illustrated mode). The permanent magnets can be positioned below the target 104.

[0141] The pumping chamber 120 is positioned between the process chamber 130 and each of the first electron beam source 110 and the second electron beam source 210 .

[0142] A fourth vacuum pump 226 may be coupled to the pumping chamber 120 proximate the second source 210 , in addition to the first vacuum pump 126 , which is preferably coupled proximate the first source 110 .

[0143] The electron beam device 200 comprises at least two first apertures 122, 222 and two second apertures 124, 224. The first apertures 122, 222 are positioned in the inner side wall 121 of the pumping chamber 120, that is, in the illustrated configuration in the side wall 132 of the process chamber 130. The second apertures 124, 224 are positioned in the outer side wall 123 of the pumping chamber 120.

[0144] The first aperture 122 and the second aperture 124 associated with the first electron beam source 110 are preferably aligned in the electron beam emission direction of the first source. The first aperture 222 and the second aperture 224 associated with the second electron beam source 210 are preferably aligned in the electron beam emission direction of the second source.

[0145] Each of the first electron beam source and the second electron beam source may be Figure 1 The electron beam source 110 is similar to the electron beam source 110 , but the volume V4 of the second electron generating chamber 212 is not necessarily equal to the volume V1 of the first electron generating chamber 112 .

[0146] In the mode shown, the electron beam sources are positioned to emit electrons substantially along the same beam plane PF. As a variant, the electron beam sources may be positioned to emit electrons along different beam planes parallel to each other.

[0147] Figure 2 Other features of the device 200 may be related to Figure 1 The features of the device 100 are similar to those of the device 100. Figure 1 The described variants can also be applied to Figure 2 device 200.

[0148] There may be more than two electron beam sources and other vacuum pumps associated with other electron beam sources. A pumping chamber is then positioned between the process chamber and each of the electron beam sources. The first orifice and the second orifice associated with each electron beam source are then preferably aligned in the electron beam emission direction of the electron beam source.

[0149] For example, Figure 3 It has been shown that Figure 2 The device is similar to a top view of the device, where the third electron beam source 310 can be positioned.

[0150] At least one electron beam source can be suitable for forming electrons at low energy (typically in the range from 0.1 keV to 2 keV), suitable for plasma cleaning, plasma layer densification, plasma etching and / or sputtering, and suitable for forming high power electrons, typically in the range from 2 keV to 30 keV, with an intensity typically in the range from 10 mA to 200 mA per source, more suitable for electron beam vapor deposition.

[0151] By multiplying the electron beam sources assembled around the process chamber, the overall intensity of the resulting electrons can be multiplied accordingly.

[0152] Figure 4 is a top view of an electron beam apparatus 400 according to a third embodiment, the apparatus 400 and Figures 1 to 3 The devices 100 and 200 differ mainly in that the body 40 is parallelepipedal, not cylindrical. The treatment chamber 430 is defined by the walls of this parallelepipedal body and by the pumping chamber 420 (which also forms a parallelepipedal ring) positioned inside the parallelepipedal body. According to a variant not shown, the pumping chamber can be positioned outside the parallelepipedal body, against one or more side walls of said body.

[0153] The smallest dimension of the cross section of the process chamber 430 taken in the beam plane then corresponds to the width L3, which corresponds to the width L4 of the body minus the width of the pumping chamber.

[0154] The electron beam sources 110, 210, 310 shown can be similar to the sources described previously and can be positioned to emit electrons in multiple directions X, X', Y along a single beam plane PF or in multiple directions along multiple beam planes parallel to each other. In addition, the sources can be positioned on two different side walls of the body, such as two parallel walls and / or two perpendicular walls.

[0155] Various embodiments and variations have been described. Those skilled in the art will appreciate that certain features of these various embodiments and variations may be combined, and that other variations will occur to those skilled in the art.

[0156] Finally, the actual implementation of the described embodiments and variants is within the capabilities of a person skilled in the art based on the functional indications given above.

Claims

1. An electron beam device (100; 200; 400), including: - a processing chamber (130; 430) having a longitudinal direction (Z); - at least one electron beam source (110, 210, 310), each source being suitable for emitting an electron beam in a beam plane (PF) substantially transverse to said longitudinal direction (Z) so as to induce a plasma or vaporization spot in said treatment chamber (130; 430) for treating a surface of a component (106); said at least one electron beam source being outside said treatment chamber; a pumping chamber (120; 420) coupled to the first vacuum pump (126), the process chamber and the at least one electron beam source, the pumping chamber being positioned between the process chamber and the at least one electron beam source and being adapted to perform differential vacuum pumping of the process chamber; - at least one first aperture (122; 222) for passage of said electron beam between said process chamber and said pumping chamber; and - at least one second aperture (124; 224) for passage of said electron beam between said pumping chamber and said at least one electron beam source.

2. The apparatus according to claim 1, wherein: - the diameter of the smallest circle inscribed in the at least one first orifice is less than or equal to one eighth, for example less than or equal to one tenth, of the smallest dimension (D3, L3) of the cross section of the process chamber (130) taken in the beam plane; and / or The diameter of the smallest circle inscribed in the at least one second orifice (124) is less than or equal to one eighth, for example less than or equal to one tenth, of the smallest dimension of the cross section of the process chamber (130) taken in the beam plane.

3. The device according to claim 1 or 2, wherein: The at least one first aperture (122; 222) is positioned in a side wall (132) of the process chamber so that an electron beam emitted by the at least one electron beam source can enter the process chamber through the at least one first aperture.

4. The device according to any one of claims 1 to 3, wherein: The at least one second aperture (124; 224) is positioned in the side wall (123) of the pumping chamber so that the electron beam emitted by the at least one electron beam source can enter the pumping chamber through the at least one second aperture.

5. The device according to any one of claims 1 to 4, wherein: The at least one electron beam source, the process chamber and the pumping chamber form a closed assembly.

6. The device according to any one of claims 1 to 5, wherein: The processing chamber (130; 430) comprises a target (104) which is suitable for emitting particles towards the component (106) under the action of the electron beam or the plasma, so as to induce a thin film deposition process on the component by sputtering technology or electron beam vapor deposition technology.

7. The device according to claim 6, wherein: The processing chamber (130; 430) comprises a first support base (134) adapted to support the target (104), the first support base being movable, for example.

8. The device according to claim 7, wherein: The first supporting base comprises or consists of a crucible, for example a cooling crucible.

9. The apparatus according to any one of claims 6 to 8, further comprising: - a source for biasing the target (104) to a voltage in the range from 0 to 10 kV, preferably from 2 kV to 5 kV; and / or - Elements for cooling the target.

10. The device according to any one of claims 1 to 9, wherein: The processing chamber (130; 430) comprises a second support base (136) suitable for supporting the component (106) to be processed, the second support base being movable, for example.

11. The apparatus according to any one of claims 1 to 10, comprising: Deflection means (140, 240), such as an electromagnet or a permanent magnet, adapted to deflect the electron beam in the process chamber (130; 430), the deflection means being for example movable.

12. The apparatus according to any one of claims 1 to 11, wherein: The process chamber (130; 430) is delimited by the walls of a cylindrical or parallelepiped body, and the pumping chamber (120; 420) is positioned against the side walls of the body, inside or outside the body; the pumping chamber is for example coaxial with the process chamber.

13. The apparatus according to any one of claims 1 to 12, wherein: The at least one electron beam source (110, 210, 310) includes an electron generation chamber (112, 212) and a tube (114, 214) between the electron generation chamber and the processing chamber (130; 430); each tube is coupled to the pumping chamber (120; 420); and the at least one second orifice (124) is between the pumping chamber and the tube of the at least one electron beam source.

14. The apparatus according to any one of claims 1 to 13, wherein: The at least one electron beam source (110, 210, 310) comprises focusing means (116, 216), such as an electromagnet, adapted to focus the electron beam and, for example, direct it towards the process chamber (130; 430).

15. The apparatus according to any one of claims 1 to 14, comprising: A second vacuum pump (142) coupled to the process chamber (130; 430) and / or a third vacuum pump (115) coupled to the at least one electron beam source (110, 210, 310).

16. The apparatus according to any one of claims 1 to 15, comprising: A plurality of electron beam sources (110, 210, 310) are provided outside the processing chamber (130; 430).

17. The device according to claim 16, wherein: At least two of the electron beam sources are adapted to emit electrons along the same beam plane or along two mutually parallel beam planes.

18. The apparatus according to any one of claims 1 to 17, wherein: The at least one first aperture and / or the at least one second aperture correspond to apertures of the diaphragm.

19. The apparatus according to any one of claims 1 to 18, wherein: The device is suitable for implementing the following: - Thin film deposition by cathode sputtering; - Thin film deposition by electron beam vapor deposition; - cleaning with the aid of plasma; - layer densification by means of plasma; and / or -Plasma etching.

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