Wafer-level CVD (chemical vapor deposition) film growth system

Abstract

The invention provides a wafer-level CVD (Chemical Vapor Deposition) film growth system. The thin film growth system comprises at least three air inlet pipelines, at least three exhaust pipelines, a thin film thickness testing device and a main control device, for any gas inlet pipeline, the first end of the gas inlet pipeline is used for being communicated with a gas source, the first end of the gas inlet pipeline is further communicated with the gas inlet end of the exhaust pipeline corresponding to the gas inlet pipeline, and the second end of the gas inlet pipeline is communicated with a gas inlet of the process chamber; the gas outlet end of each gas exhaust pipeline is communicated with the tail gas treatment device; and the main control device controls the conduction state of each air inlet pipeline and each exhaust pipeline and the type of the air source according to the thickness of the deposited film on the substrate detected by the film thickness testing device after primary deposition, and adjusts the thickness of the deposited film. The thickness of the deposited film is detected after primary deposition, secondary deposition or etching is carried out on the partial area of the substrate by controlling the conduction state of the air inlet pipeline and the exhaust pipeline, the thickness of the deposited film in each area on the substrate is adjusted, and deposition is more uniform.

Description

Technical Field

[0001] The invention relates to the technical field of semiconductor device production, and in particular to a wafer-level CVD thin film growth system. Background Art

[0002] Chemical vapor deposition (CVD) is a widely used thin film growth process. This technology mainly uses one or more gas phase compounds or single substances containing thin film elements to chemically react on the surface of the substrate to generate a thin film.

[0003] Film thickness is one of the important technical indicators of CVD film growth, which is related to the subsequent use scenarios of film materials. The CVD film growth rate can be affected by adjusting the reaction temperature, reaction pressure, reaction gas composition and total gas flow rate, thereby further affecting the thickness of the CVD-grown film.

[0004] In the prior art, deposition is usually performed on the wafer as a whole. However, due to the influence of the wafer surface shape, wafer surface morphology, reaction chamber temperature field and airflow field non-uniformity, there are certain differences in the thickness of the thin film grown by CVD within a single wafer, resulting in poor uniformity of the deposition thickness within the single wafer, which in turn leads to obvious deviations in the physical properties of various regions on the wafer, affecting the product quality of the wafer. Summary of the invention

[0005] The embodiment of the present invention provides a wafer-level CVD thin film growth system to solve the problem in the prior art that the thickness of the thin film grown by CVD has certain differences and is uneven, resulting in deviations in the physical properties of various regions on the wafer.

[0006] In a first aspect, an embodiment of the present invention provides a wafer-level CVD thin film growth system, comprising: at least three air intake pipelines, at least three exhaust pipelines, a film thickness testing device, and a main control device; wherein each air intake pipeline corresponds to each exhaust pipeline one by one;

[0007] For any one of the air inlet pipelines, the first end of the air inlet pipeline is used to communicate with the gas source, the first end of the air inlet pipeline is also connected to the air inlet end of the exhaust pipeline corresponding to the air inlet pipeline, and the second end of the air inlet pipeline is connected to the air inlet of the process chamber;

[0008] The gas outlet end of each exhaust pipeline is connected to the exhaust gas treatment device for discharging gas to the exhaust gas treatment device;

[0009] The film thickness testing device is used to detect the thickness of the deposited film on the substrate after one deposition;

[0010] The main control device is used to control the conduction state of each air inlet pipeline and each exhaust pipeline and the type of gas source according to the detected deposited film thickness, so as to adjust the deposited film thickness on the substrate.

[0011] Optionally, controlling the conduction state of each air inlet pipeline and each exhaust pipeline according to the detected deposited film thickness to adjust the deposited film thickness on the substrate includes:

[0012] Determine the secondary deposition area and the etching area according to the thickness of the deposited film obtained by detection;

[0013] Determine the air intake pipeline corresponding to the secondary deposition area as the first target pipeline; determine the air intake pipeline corresponding to the etching area as the second target pipeline;

[0014] Simultaneously, the first target pipeline is controlled to be connected, other intake pipelines except the first target pipeline are controlled to be disconnected, the exhaust pipeline connected to the first target pipeline is controlled to be disconnected, and the exhaust pipeline connected to other intake pipelines except the first target pipeline is controlled to be connected, and deposition gas is introduced into the first end of each intake pipeline to perform secondary deposition on the secondary deposition area;

[0015] At the same time, the second target pipeline is controlled to be connected, the other intake pipelines except the second target pipeline are controlled to be disconnected, the exhaust pipeline connected to the second target pipeline is controlled to be disconnected, and the exhaust pipeline connected to other intake pipelines except the second target pipeline is controlled to be connected, and etching gas is introduced into the first end of each intake pipeline to etch the etching area.

[0016] Optionally, each air inlet pipeline corresponds to a different area on the substrate, and the area on the substrate corresponding to each air inlet pipeline covers the entire substrate; and determining the secondary deposition area and the etching area according to the thickness of the deposited film obtained by detection includes:

[0017] For each air intake pipeline, determine the average value of the deposited film thickness of the area on the substrate corresponding to the air intake pipeline; subtract the target deposition thickness from the average value to obtain the thickness difference; if the thickness difference is greater than 0, determine that the area on the substrate corresponding to the air intake pipeline is a secondary deposition area; if the thickness difference is less than 0, determine that the area on the substrate corresponding to the air intake pipeline is an etching area.

[0018] Optionally, controlling the conduction state of each air inlet pipeline and each exhaust pipeline according to the detected deposited film thickness, and adjusting the deposited film thickness on the substrate further includes:

[0019] Determine the gas flow rate and reaction time when performing secondary deposition on the secondary deposition area according to the thickness difference corresponding to the secondary deposition area;

[0020] The gas flow rate and reaction time when etching the etched area are determined according to the thickness difference corresponding to the etched area.

[0021] Optionally, the deposition gas is TCS and C2H4, and the etching gas is HCl.

[0022] Optionally, a deposition includes:

[0023] At the same time, each air intake pipeline is controlled to be turned on and each air exhaust pipeline is controlled to be turned off, and a carrier gas is introduced into the first end of each air intake pipeline;

[0024] Adjusting the temperature and pressure in the process chamber and introducing deposition gas into the first end of each gas inlet pipeline;

[0025] Control the disconnection of each intake pipeline and control the conduction of each exhaust pipeline.

[0026] Optionally, the wafer-level CVD thin film growth system further includes: at least three inlet valves and at least three exhaust valves; each inlet valve corresponds to each inlet pipeline one-to-one, and each exhaust valve corresponds to each exhaust pipeline one-to-one;

[0027] Each intake valve is respectively arranged in each intake pipeline, and each exhaust valve is respectively arranged in each exhaust pipeline;

[0028] The control of the conduction state of each intake pipeline and each exhaust pipeline is achieved by controlling the opening state of each intake valve and each exhaust valve.

[0029] Optionally, the wafer-level CVD thin film growth system further includes: at least three flow meters; each flow meter corresponds to each air inlet pipeline one by one;

[0030] Each flow meter is respectively arranged in each intake pipeline to detect the air flow in each intake pipeline.

[0031] Optionally, the substrate is formed of any one of Si, SiC, GaN, Ga2O3, and SiO2.

[0032] Optionally, the number of intake pipes is 3 to 9.

[0033] The embodiment of the present invention provides a wafer-level CVD thin film growth system. The above-mentioned wafer-level CVD thin film growth system includes: at least 3 air intake pipelines, at least three exhaust pipelines, a film thickness test device and a main control device; wherein each air intake pipeline corresponds to each exhaust pipeline one by one; for any air intake pipeline, the first end of the air intake pipeline is used to communicate with the gas source, the first end of the air intake pipeline is also connected to the air intake end of the exhaust pipeline corresponding to the air intake pipeline, and the second end of the air intake pipeline is connected to the air inlet of the process chamber; the outlet end of each exhaust pipeline is connected to the exhaust gas treatment device, which is used to discharge gas to the exhaust gas treatment device; the film thickness test device is used to detect the thickness of the deposited film on the substrate after one deposition; the main control device controls the conduction state of each air intake pipeline and each exhaust pipeline and the type of gas source according to the detected thickness of the deposited film, and adjusts the thickness of the deposited film on the substrate. In the embodiment of the present invention, a plurality of air inlet pipelines and a plurality of exhaust pipelines are provided, and each air inlet pipeline corresponds to a different area on the substrate; the thickness of the deposited film is detected after one deposition, and when there is an abnormality in the thickness of the deposited film, the air inlet pipeline corresponding to the abnormal area can be turned on to perform secondary deposition or etching on the abnormal area, thereby locally adjusting the thickness of the deposited film in the abnormal area, so that the thickness of the deposited film in each area on the entire substrate is more uniform, thereby reducing the deviation of the physical properties of each area on the wafer, and improving the product quality of the wafer. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] In order to more clearly illustrate the technical solutions in the embodiments of the present invention, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative labor.

[0035] Figure 1 It is a schematic diagram of the structure of a wafer-level CVD thin film growth system provided by an embodiment of the present invention. ;

[0036] Figure 2 is a graph of the thickness of a deposited film after a single deposition provided by an embodiment of the present invention;

[0037] Figure 3 This is a graph of the deposited film thickness after adjustment provided by an embodiment of the present invention. DETAILED DESCRIPTION

[0038] In order to enable people in the technical field to better understand the present solution, the technical solution in the embodiment of the present solution will be clearly described below in conjunction with the drawings in the embodiment of the present solution. Obviously, the described embodiment is an embodiment of a part of the present solution, not all of the embodiments. Based on the embodiments in the present solution, all other embodiments obtained by ordinary technicians in the field without creative work should fall within the scope of protection of the present solution.

[0039] The term "including" and any other variations in the specification and claims of this solution and the above drawings mean "including but not limited to", and is intended to cover non-exclusive inclusions and is not limited to the examples listed in the text. In addition, the terms "first" and "second" are used to distinguish different objects, not to describe a specific order.

[0040] The following is a detailed description of the implementation of the present invention in conjunction with the specific drawings:

[0041] Figure 1 A schematic diagram of the structure of a wafer-level CVD thin film growth system provided by an embodiment of the present invention. Figure 1 The wafer-level CVD thin film growth system comprises: at least three air intake pipelines 1, at least three exhaust pipelines 2, a film thickness test device and a main control device; wherein each air intake pipeline 1 corresponds to each exhaust pipeline 2 one by one;

[0042] For any one of the air inlet pipelines 1, the first end of the air inlet pipeline 1 is used to communicate with the gas source, the first end of the air inlet pipeline 1 is also connected to the air inlet end of the exhaust pipeline 2 corresponding to the air inlet pipeline 1, and the second end of the air inlet pipeline 1 is connected to the air inlet of the process chamber 3;

[0043] The gas outlet end of each exhaust pipeline 2 is connected to the exhaust gas treatment device 4, and is used to discharge gas to the exhaust gas treatment device 4;

[0044] The film thickness testing device is used to detect the thickness of the deposited film on the substrate after one deposition;

[0045] The main control device is used to control the conduction state of each air inlet pipeline 1 and each exhaust pipeline 2 and the type of gas source according to the detected deposited film thickness, so as to adjust the deposited film thickness on the substrate.

[0046] In the embodiment of the present invention, multiple air intake pipelines 1 and multiple exhaust pipelines 2 are provided, and the air intake pipelines 1 correspond to the exhaust pipelines 2 one by one. The air intake pipelines 1 are used to transport carrier gas or reaction gas (deposition gas or etching gas) into the process chamber 3, and the exhaust pipelines 2 are used to exhaust the gas.

[0047] Exemplarily, when the air inlet line 1 is turned on, the corresponding exhaust line 2 is turned off, and the gas source inputs carrier gas or reaction gas into the process chamber 3; when the air inlet line 1 is turned off, the corresponding exhaust line 2 is turned on, and the carrier gas or reaction gas is discharged through the exhaust line 2 and does not enter the process chamber 3. Each air inlet line 1 corresponds to a different area on the substrate. After one deposition, the thickness of the deposited film is detected. When the thickness of the deposited film is abnormal, the main control device can control the air inlet line 1 corresponding to the abnormal area to be turned on, and perform secondary deposition (thinner part) or etching (thicker part) on the abnormal area, so as to locally adjust the thickness of the deposited film in the abnormal area, realize the precise control of the thickness trend and uniformity within the wafer, make the thickness of the deposited film in each area on the entire wafer more uniform, reduce the deviation of the physical properties of each area on the wafer, and improve the product quality of the wafer.

[0048] In the embodiment of the present invention, a deposition is first performed on the substrate. Specifically, in a possible implementation manner, the deposition includes:

[0049] 1. Simultaneously control the connection of each air inlet pipeline 1 and the disconnection of each air exhaust pipeline 2, and introduce carrier gas into the first end of each air inlet pipeline 1;

[0050] 2. Adjust the temperature and pressure of the process chamber 3 and introduce deposition gas into the first end of each gas inlet pipeline 1;

[0051] 3. Control the disconnection of each intake pipeline 1 and control the connection of each exhaust pipeline 2.

[0052] The robot takes the substrate out of the cassette and transfers it to the rotating base, which starts to rotate. Each air inlet pipeline 1 is turned on, each exhaust pipeline 2 is disconnected, and the gas source is carrier gas, which enters the process chamber 3 through each air inlet pipeline 1; then the deposition gas is introduced for a period of time; after the deposition is completed, each air inlet pipeline 1 is disconnected, each exhaust pipeline 2 is opened, the gas is discharged, and the rotating base stops rotating at the same time, and one deposition is completed. Among them, the structure in the process chamber 3 is a conventional technical means, which will not be repeated here.

[0053] Since the substrate is rotated during deposition, the deposition thickness corresponding to circles with the same radius on the substrate is basically the same, and it is only necessary to detect the deposition thickness on the diameter of the substrate. Figure 2 shows the thickness of the deposited film on the substrate diameter after one deposition, Figure 2 It can be seen that the deposited film at the center of the substrate is thicker, and the deposited film at the edges of the two sides is thinner. In order to improve the uniformity of the deposited film thickness, it is necessary to etch the thicker middle area and perform secondary deposition on the thinner edge area.

[0054] Exemplarily, the carrier gas may be H2.

[0055] In a possible implementation, controlling the conduction state of each intake pipe 1 and each exhaust pipe 2 according to the detected deposited film thickness, and adjusting the deposited film thickness on the substrate may include:

[0056] S101: determining a secondary deposition area and an etching area according to the thickness of the deposited film obtained by detection;

[0057] S102: determining the air inlet pipeline 1 corresponding to the secondary deposition area as the first target pipeline; determining the air inlet pipeline 1 corresponding to the etching area as the second target pipeline;

[0058] S103: simultaneously controlling the first target pipeline to be connected, controlling the other intake pipelines 1 except the first target pipeline to be disconnected, controlling the exhaust pipeline 2 connected to the first target pipeline to be disconnected, and controlling the exhaust pipeline 2 connected to the other intake pipelines 1 except the first target pipeline to be connected, and introducing deposition gas into the first end of each intake pipeline 1 to perform secondary deposition on the secondary deposition area;

[0059] S104: Simultaneously control the connection of the second target pipeline, control the disconnection of other intake pipelines 1 except the second target pipeline, control the disconnection of the exhaust pipeline 2 connected to the second target pipeline, and control the connection of the exhaust pipeline 2 connected to other intake pipelines 1 except the second target pipeline, and introduce etching gas into the first end of each intake pipeline 1 to etch the etching area.

[0060] refer to Figure 2 According to the thickness of the deposited film, it is determined which areas have thicker deposited films and need to be etched, and which areas have thinner deposited films and need secondary deposition. For the thinner areas, the air inlet pipeline 1 corresponding to the area is controlled to be turned on, and the deposition gas is introduced for secondary deposition, and the thickness of the deposited film increases; while the air inlet pipeline 1 corresponding to other areas is disconnected, and the deposition gas is discharged through the corresponding exhaust pipeline 2 and will not enter the process chamber 3, and the thickness of the deposited film in the corresponding area will not increase.

[0061] Similarly, for thicker areas, the air inlet pipeline 1 corresponding to the area is controlled to be turned on, and the etching gas is introduced for etching, so that the thickness of the deposited film is reduced; while the air inlet pipeline 1 corresponding to other areas is disconnected, and the etching gas is directly discharged through the corresponding exhaust pipeline 2 and will not enter the process chamber 3, and the thickness of the deposited film in the corresponding area will not be affected.

[0062] Therefore, by controlling the on and off of each pipeline and the type of gas introduced, the thickness of the deposited film in the local area of ​​the wafer can be adjusted, so that the thickness of the deposited film on the entire wafer is relatively uniform, thereby achieving precise control of the thickness of the deposited film on the wafer.

[0063] In a possible implementation manner, each air inlet pipeline 1 corresponds to a different area on the substrate, and the area on the substrate corresponding to each air inlet pipeline 1 covers the entire substrate; S101 may include:

[0064] S1011: For each air intake pipe 1, determine the average value of the deposited film thickness of the area on the substrate corresponding to the air intake pipe 1; subtract the target deposition thickness from the average value to obtain the thickness difference; if the thickness difference is greater than 0, determine that the area on the substrate corresponding to the air intake pipe 1 is a secondary deposition area; if the thickness difference is less than 0, determine that the area on the substrate corresponding to the air intake pipe 1 is an etching area.

[0065] refer to Figure 2 When the deposited film thickness is greater than the target deposition thickness, etching is required; when the deposited thickness is less than the target deposition thickness, secondary deposition is required. Based on this, in the embodiment of the present invention, the average of the deposition thickness in the region is calculated, and the thickness difference between the average and the target deposition thickness is calculated to determine whether the region needs secondary deposition or etching.

[0066] In a possible implementation manner, controlling the conduction state of each intake pipeline 1 and each exhaust pipeline 2 according to the detected deposited film thickness, and adjusting the deposited film thickness on the substrate may also include:

[0067] S105: determining the gas flow rate and reaction time when performing secondary deposition on the secondary deposition area according to the thickness difference corresponding to the secondary deposition area;

[0068] S106: Determine the gas flow rate and reaction time when etching the etching area according to the thickness difference corresponding to the etching area.

[0069] The gas flow rate and reaction time determine the thickness of the deposition or etching. Therefore, in the embodiment of the present invention, the reaction parameters of the secondary deposition or etching are determined according to the thickness difference, so that after the secondary deposition or etching, the deposition thickness can reach the target deposition thickness.

[0070] In a possible implementation, the deposition gas may be TCS and C2H4, and the etching gas may be HCl.

[0071] Specifically, the types of deposition gas and etching gas are not limited to the above, and can be set according to actual application requirements.

[0072] In one possible implementation, reference Figure 1 The wafer-level CVD thin film growth system may further include: at least three inlet valves (K1, K2, K3) and at least three exhaust valves (K4, K5, K6); each inlet valve corresponds to each inlet pipeline 1 one by one, and each exhaust valve corresponds to each exhaust pipeline 2 one by one;

[0073] Each intake valve is respectively arranged in each intake pipeline 1, and each exhaust valve is respectively arranged in each exhaust pipeline 2;

[0074] The control of the conduction state of each intake pipe 1 and each exhaust pipe 2 is achieved by controlling the opening state of each intake valve and each exhaust valve.

[0075] refer to Figure 1 Intake valves (K1, K2, K3) can be set in each intake pipeline 1 to control the on-off of the intake pipeline 1; at the same time, exhaust valves (K4, K5, K6) can be set in each exhaust pipeline 2 to control the on-off of the exhaust pipeline 2.

[0076] Exemplarily, each intake valve and each exhaust valve may be a pneumatic valve.

[0077] In one possible implementation, reference Figure 1 The wafer-level CVD thin film growth system may further include: at least three flow meters 5; each flow meter 5 corresponds to each air inlet pipeline 1 one by one;

[0078] Each flow meter 5 is disposed in each intake pipeline 1 , and is used to detect the air flow rate in each intake pipeline 1 .

[0079] A flow meter 5 may also be provided in each air inlet pipeline 1 to monitor the gas flow in each air inlet pipeline 1, thereby accurately controlling the flow of the carrier gas and the reaction gas.

[0080] In a possible implementation, the substrate may be formed of any one of Si, SiC, GaN, Ga2O3, and SiO2.

[0081] In a possible implementation manner, the number of the air intake pipelines 1 may be 3 to 9.

[0082] In a possible implementation, the size of the substrate may be 4 inches to 12 inches.

[0083] refer to Figure 1 , the number of inlet pipe 1 and outlet pipe 2 are both 3; the above system is described in detail below in conjunction with a specific embodiment;

[0084] 1. The substrate is transferred to the rotating base, and the rotating base starts to rotate;

[0085] 2. Open K1, K2 and K3, close K4, K5 and K6, pass the carrier gas (H2) into the process chamber 3 through each gas inlet pipeline 1, and use three flow meters 5 to adjust the gas flow into the process chamber 3;

[0086] 3. The temperature of process chamber 3 is raised to 1600°C, and the gas pressure in process chamber 3 is adjusted to 100 mbar. Deposition gas (TCS and C2H4) is introduced into process chamber 3, and CVD deposition is performed on the substrate for 12 minutes.

[0087] 4. After CVD deposition is completed, close K1, K2 and K3, open K4, K5 and K6, stop the rotating base, and test the thickness of the deposited film by CVD deposition with the film thickness test device. The test results refer to Figure 2 ;

[0088] 5. Maintain the temperature and pressure of process chamber 3, turn on the rotating base, open K1, K3, and K5, close K2, K4, and K6, continue to introduce deposition gas, adjust the first flow meter and the third flow meter, and perform CVD deposition on the edge area of ​​the substrate for 20 seconds;

[0089] 6. Maintain the temperature and pressure of process chamber 3, keep the rotating base rotating, open K2, K4, K6, close K1, K3, K5, introduce HCl gas, and etch the center area of ​​the substrate for 1 minute; after completion, close K1, K2 and K3, open K4, K5 and K6, and stop the rotating base;

[0090] 7. The film thickness test device performs secondary measurement on the deposited film, and the measurement results are referenced Figure 3 .

[0091] Depend on Figure 2 and Figure 3 It can be seen that the thickness non-uniformity of the deposited film after one deposition reaches 2.11%. After adjustment, the thickness of the deposited film in each area is close to the target deposition thickness, and the thickness non-uniformity of the deposited film is reduced to 0.09%, which effectively improves the uniformity of the deposited film thickness.

[0092] The above embodiments are only used to illustrate the technical solutions of the present invention, rather than to limit the same. Although the present invention has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that the technical solutions described in the aforementioned embodiments may still be modified, or some of the technical features may be replaced by equivalents. However, these modifications or replacements do not deviate the essence of the corresponding technical solutions from the spirit and scope of the technical solutions of the embodiments of the present invention.

Claims

1. A wafer-level CVD thin film growth system, characterized in that: include: At least three air intake pipes, at least three exhaust pipes, a film thickness test device and a main control device; wherein each air intake pipe corresponds to each exhaust pipe one by one; For any one of the air inlet pipelines, the first end of the air inlet pipeline is used to communicate with the gas source, the first end of the air inlet pipeline is also connected to the air inlet end of the exhaust pipeline corresponding to the air inlet pipeline, and the second end of the air inlet pipeline is connected to the air inlet of the process chamber; The gas outlet end of each exhaust pipeline is connected to the exhaust gas treatment device for discharging gas to the exhaust gas treatment device; The thin film thickness testing device is used to detect the thickness of the deposited film on the substrate after one deposition; The main control device is used to control the conduction state of each air inlet pipeline and each exhaust pipeline and the type of the gas source according to the detected deposited film thickness, so as to adjust the deposited film thickness on the substrate.

2. The wafer-level CVD thin film growth system according to claim 1, characterized in that: The method controls the conduction state of each air inlet pipeline and each exhaust pipeline according to the detected deposited film thickness, and adjusts the deposited film thickness on the substrate, including: Determine the secondary deposition area and the etching area according to the thickness of the deposited film obtained by detection; Determine the air intake pipeline corresponding to the secondary deposition area as the first target pipeline; determine the air intake pipeline corresponding to the etching area as the second target pipeline; Simultaneously, controlling the first target pipeline to be connected, controlling the other intake pipelines except the first target pipeline to be disconnected, controlling the exhaust pipeline connected to the first target pipeline to be disconnected, and controlling the exhaust pipeline connected to the other intake pipelines except the first target pipeline to be connected, and introducing deposition gas into the first end of each intake pipeline to perform secondary deposition on the secondary deposition area; At the same time, the second target pipeline is controlled to be turned on, the other intake pipelines except the second target pipeline are controlled to be disconnected, the exhaust pipeline connected to the second target pipeline is controlled to be disconnected, and the exhaust pipeline connected to the other intake pipelines except the second target pipeline is controlled to be turned on, and etching gas is introduced into the first end of each intake pipeline to etch the etching area.

3. The wafer-level CVD thin film growth system according to claim 2, characterized in that: Each air inlet pipeline corresponds to a different area on the substrate, and the area on the substrate corresponding to each air inlet pipeline covers the entire substrate; the secondary deposition area and the etching area are determined according to the thickness of the deposited film obtained by detection, including: For each air intake pipeline, determine the average value of the deposited film thickness of the area on the substrate corresponding to the air intake pipeline; subtract the target deposition thickness from the average value to obtain the thickness difference; if the thickness difference is greater than 0, determine that the area on the substrate corresponding to the air intake pipeline is the secondary deposition area; if the thickness difference is less than 0, determine that the area on the substrate corresponding to the air intake pipeline is the etching area.

4. The wafer-level CVD thin film growth system according to claim 3, characterized in that: The controlling of the conduction state of each air inlet pipeline and each exhaust pipeline according to the detected deposited film thickness, and adjusting the deposited film thickness on the substrate further comprises: Determining the gas flow rate and reaction time when performing secondary deposition on the secondary deposition area according to the thickness difference corresponding to the secondary deposition area; The gas flow rate and reaction time when etching the etching area are determined according to the thickness difference corresponding to the etching area.

5. The wafer-level CVD thin film growth system according to claim 2, characterized in that: The deposition gas is TCS and C2H4, and the etching gas is HCl.

6. The wafer-level CVD thin film growth system according to any one of claims 1 to 5, characterized in that: The primary deposition comprises: At the same time, each air intake pipeline is controlled to be turned on and each air exhaust pipeline is controlled to be turned off, and a carrier gas is introduced into the first end of each air intake pipeline; Adjusting the temperature and pressure of the process chamber and introducing deposition gas into the first end of each gas inlet pipeline; Control the disconnection of each intake pipeline and control the conduction of each exhaust pipeline.

7. The wafer-level CVD thin film growth system according to any one of claims 1 to 5, characterized in that: The wafer-level CVD thin film growth system further includes: at least three inlet valves and at least three exhaust valves; each inlet valve corresponds to each inlet pipeline one-to-one, and each exhaust valve corresponds to each exhaust pipeline one-to-one; Each intake valve is respectively arranged in each intake pipeline, and each exhaust valve is respectively arranged in each exhaust pipeline; The control of the conduction state of each intake pipeline and each exhaust pipeline is achieved by controlling the opening state of each intake valve and each exhaust valve.

8. The wafer-level CVD thin film growth system according to any one of claims 1 to 5, characterized in that: The wafer-level CVD thin film growth system further includes: at least three flow meters; each flow meter corresponds to each air inlet pipeline one by one; Each flow meter is respectively arranged in each intake pipeline to detect the air flow in each intake pipeline.

9. The wafer-level CVD thin film growth system according to any one of claims 1 to 5, characterized in that: The substrate is formed of any one of Si, SiC, GaN, Ga2O3, and SiO2.

10. The wafer-level CVD thin film growth system according to any one of claims 1 to 5, characterized in that: The number of the air intake pipelines is 3 to 9.

Images