Gas showerhead, vapor deposition apparatus, and method of use thereof

Abstract

This invention discloses a gas spray head, a vapor deposition apparatus, and a method of using the same. The gas spray head includes: a gas distribution plate with alternating and concentrically arranged first and second conveying channels; a first gas connecting channel on the cover plate spanning the second conveying channel and connecting two adjacent first conveying channels; a second gas connecting channel spanning the first conveying channel and connecting two adjacent second conveying channels; a first inlet end of the first conveying channel for conveying a first gas; a first low-pressure source for providing low pressure to a first outlet end; a second inlet end for conveying a second gas; a second low-pressure source for providing low pressure to a second outlet end; and vents below the first and second conveying channels. The gas spray head provided by this invention can be rapidly ventilated, preventing the two reactive gases from mixing in the gas spray head, and can also provide a uniform reactive gas to the substrate.

Description

Technical Field

[0001] This invention relates to the field of semiconductor equipment technology, and in particular to a gas spray head, a vapor deposition apparatus, and a method of using the same. Background Technology

[0002] Under vacuum conditions, growing thin films on substrate surfaces using vapor deposition technology is an important approach to obtaining thin film materials with excellent mechanical properties and special physical / chemical properties, and it is a research hotspot in the fields of materials science and physical science today.

[0003] Atomic Layer Deposition (ALD) is one of the most widely used thin film growth technologies. Essentially a type of Chemical Vapor Deposition (CVD), it involves alternately pulsed gaseous precursors into a reactor, where they are adsorbed onto the substrate and react with atoms through chemical interactions to form a deposited film. Compared to other thin film preparation methods such as CVD and Physical Vapor Deposition (PVD), ALD offers significant advantages in terms of film shape preservation and uniformity due to its unique reaction mechanism.

[0004] During atomic layer deposition (ALD), different vapor precursors are alternately introduced into the processing chamber containing the substrate through gas spray nozzles in the vapor deposition equipment; and a uniform reaction gas supply is required to the substrate. Furthermore, in order to achieve rapid switching of vapor precursors and prevent mixing of different vapor precursors within the gas spray nozzle, it is necessary to quickly remove residual vapor precursors. However, in the prior art, due to the complex gas channel structure within the gas spray nozzle, the flow of residual vapor precursors within the gas spray nozzle is slow, making it difficult to quickly remove residual vapor precursors, resulting in deposits forming on the surface of the gas spray nozzle or in the spray holes. Summary of the Invention

[0005] The purpose of this invention is to provide a gas spray head, a vapor deposition apparatus, and a method of using the same, so as to achieve rapid switching of vapor precursors while avoiding mixing of different precursors in the gas spray head, and to provide a uniform gas supply source to the substrate.

[0006] To achieve the above objectives, the present invention is implemented through the following technical solution:

[0007] A gas spray head, characterized in that it comprises: a gas distribution plate, wherein the gas distribution plate is provided with a gas conveying channel, the gas conveying channel including a plurality of first conveying channels and a plurality of second conveying channels, the plurality of first conveying channels and the plurality of second conveying channels being alternately arranged and concentrically configured; a cover plate, which covers the gas distribution plate, the cover plate being provided with a gas connecting channel, the gas connecting channel including a plurality of first gas connecting channels and a plurality of second gas connecting channels; the first gas connecting channel crossing the second conveying channel and connecting two adjacent first conveying channels; the second gas connecting channel crossing the first conveying channel and connecting two adjacent second conveying channels; a first inlet end connected to the first conveying channel for conveying a first gas into the first conveying channel; a first low-pressure source connected to the first outlet end of the first conveying channel for providing low pressure to the first outlet end; a second inlet end connected to the second conveying channel for conveying a second gas into the second conveying channel; a second low-pressure source connected to the second outlet end of the second conveying channel for providing low pressure to the second outlet end; and a plurality of air holes provided below the first conveying channel and the second conveying channel, the air holes being used to supply reactive gas to the surface of the substrate to be treated.

[0008] Optionally, a circular groove is provided at the center of the top surface of the gas distribution plate, and a plurality of annular grooves are provided around the circular groove, and the cover plate covers the top surface of the gas distribution plate.

[0009] Optionally, the first gas communication channel and the second gas communication channel are arranged radially along the cover plate.

[0010] Optionally, the first gas communication channel and the second gas communication channel are arranged perpendicular to each other.

[0011] Optionally, each of the gas delivery channels includes an inlet and an outlet; the outlet of one of two adjacent first delivery channels is connected to the inlet of the other; the outlet of one of two adjacent second delivery channels is connected to the inlet of the other.

[0012] Optionally, it further includes: each of the annular grooves is provided with an inclined partition wall, the partition wall dividing the corresponding annular groove into two non-communicating parts.

[0013] Optionally, each of the gas delivery channels includes an inlet and an outlet located on both sides of the partition wall; the outlet of one of the two adjacent first delivery channels is connected to the inlet of the other through the first gas communication channel, so that the first gas diffuses in a spiral shape toward the first outlet end; the outlet of one of the two adjacent second delivery channels is connected to the inlet of the other through the second gas communication channel, so that the second gas diffuses in a spiral shape toward the second outlet end.

[0014] Optionally, the tangent at the connection point between the partition wall and the outer wall of the corresponding annular groove forms an angle with the partition wall, the angle being in the range of 15° to 45°.

[0015] Optionally, the partition walls in the first conveying channel are arranged in a spiral pattern; the partition walls in the second conveying channel are also arranged in a spiral pattern.

[0016] Optionally, the plurality of first gas communication channels are arranged in a spiral pattern on the cover plate; the plurality of second gas communication channels are arranged in a spiral pattern on the cover plate.

[0017] Optionally, the gas communication channel includes an inlet and an outlet, the inlet being connected to the outlet of the corresponding gas delivery channel, and the outlet being connected to the inlet of the corresponding gas delivery channel.

[0018] Optionally, the inlet and outlet extend circumferentially along the corresponding gas delivery channels.

[0019] Optionally, the circumferential length of the inlet of the gas communication channel is not less than the radial width of the outlet of the corresponding gas delivery channel; the circumferential length of the outlet of the gas communication channel is not less than the radial width of the inlet of the corresponding gas delivery channel.

[0020] Optionally, the inlet of the outermost first conveying channel is one of the first inlet end and the first outlet end, and the outlet of the innermost first conveying channel is the other of the first inlet end and the first outlet end; the inlet of the outermost second conveying channel is one of the second inlet end and the second outlet end, and the outlet of the innermost second conveying channel is the other of the second inlet end and the second outlet end.

[0021] Optionally, both the first low-pressure source and the second low-pressure source include a valve for controlling the suction force of the low-pressure source.

[0022] Optionally, each groove is provided with an annular seal around its perimeter.

[0023] On the other hand, the present invention provides a vapor deposition apparatus, comprising: a reaction chamber; a base disposed at the bottom of the interior of the reaction chamber for supporting a substrate; and a gas spray head as described above, disposed at the top of the reaction chamber and opposite to the base for providing reactive gas to the surface of the substrate.

[0024] Furthermore, the present invention also provides a method for using the vapor deposition apparatus as described above, comprising: step a, introducing a first reactive gas into the first delivery channel, with the second low-pressure source in a closed state; step b, stopping the introduction of the first reactive gas, introducing a purge gas into the first delivery channel, with the first low-pressure source in a closed state; step c, turning off the first low-pressure source, introducing a second reactive gas into the second delivery channel; step d, stopping the introduction of the second reactive gas, introducing a purge gas into the second delivery channel, with the second low-pressure source in a closed state; repeating steps a to d.

[0025] Optionally, it further includes: turning on a first low-voltage source while performing step a; and turning on a second low-voltage source while performing step c.

[0026] Optionally, it further includes: introducing purge gas into the second conveying channel while performing step a; and introducing purge gas into the first conveying channel while performing step c.

[0027] Optionally, when performing step b, the opening degree of the gas valve of the first low-pressure source is gradually increased from small; when performing step d, the opening degree of the gas valve of the second low-pressure source is gradually increased from small.

[0028] This invention has at least one of the following advantages:

[0029] The present invention provides a gas spray head that prevents different precursors from mixing inside the gas spray head through a first conveying channel and a second conveying channel. A low-pressure source is provided to quickly degas the inside of the gas spray head. After the reaction gas enters the first conveying channel or the second conveying channel, it diffuses to both sides of the first conveying channel or the second conveying channel. It has the characteristics of low flow resistance, low pressure drop and uniform gas distribution.

[0030] The first gas communication channel and the second gas communication channel provided by the present invention are arranged perpendicularly to each other, which reduces the difficulty of manufacturing process.

[0031] The inlet and outlet of the first / second gas communication channel provided by this invention extend circumferentially along the corresponding first / second conveying channel. Preferably, the circumferential length of the inlet of the first / second gas communication channel is not less than the radial width of the outlet of the corresponding first / second conveying channel; the circumferential length of the outlet of the first / second gas communication channel is not less than the radial width of the inlet of the corresponding first / second conveying channel. This further reduces the flow resistance of the gas at the inlet and outlet, achieving a smooth transition of the gas within the gas communication channel.

[0032] When the gas spray head provided by the present invention includes multiple partition walls, the tangent at the connection point between the partition wall and the outer wall of the corresponding annular groove forms an angle with the partition wall. Preferably, the angle ranges from 15° to 45°, thereby further reducing the flow resistance of the gas at the inlet and outlet holes and achieving a smooth transition of the gas in the gas communication channel.

[0033] Each of the annular grooves provided by the present invention is provided with a sealing element around its periphery. Thus, the sealing element can prevent the gases in the first conveying channel and the second conveying channel from mutually penetrating and mixing. The annular groove reduces the process difficulty of setting the sealing element.

[0034] The method of using the vapor deposition equipment provided by this invention, by simultaneously introducing purge gas into the delivery channel and drawing a vacuum, can quickly remove residual reactive gases in the delivery channel and prevent the two reactive gases from reacting. Simultaneous vacuuming while introducing reactive gases into the delivery channel helps the reactive gases to diffuse rapidly and uniformly within the delivery channel. Attached Figure Description

[0035] Figure 1 This is a schematic diagram of a vapor deposition apparatus according to an embodiment of the present invention;

[0036] Figure 2 This is a schematic diagram of the first gas flow path in the first conveying channel of a gas distribution plate according to an embodiment of the present invention;

[0037] Figure 3 This is a schematic diagram of the second gas flow path in the second conveying channel of a gas distribution plate provided in an embodiment of the present invention;

[0038] Figure 4 This is a top view of a gas distribution plate provided in an embodiment of the present invention;

[0039] Figure 5 This is a bottom view of a gas distribution plate provided in an embodiment of the present invention;

[0040] Figure 6 A bottom view of a cover plate provided in an embodiment of the present invention;

[0041] Figure 7 This is a three-dimensional structural diagram of a gas spray head provided in an embodiment of the present invention;

[0042] Figure 8 An embodiment of the present invention provides an edge Figure 7 A schematic diagram of the cross-sectional structure of the gas spray head in the XX direction is shown.

[0043] Figure 9 An embodiment of the present invention provides an edge Figure 7 A schematic diagram of the cross-sectional structure of the gas spray head in the YY direction is shown.

[0044] Figure 10 This is a top view of a gas distribution plate provided in another embodiment of the present invention. Detailed Implementation

[0045] The following detailed description, in conjunction with the accompanying drawings and specific embodiments, further illustrates the gas spray head, vapor deposition equipment, and their usage method proposed in this invention. The advantages and features of this invention will become clearer from the following description. It should be noted that the drawings are in a very simplified form and use non-precise proportions, intended only to facilitate and clearly illustrate the embodiments of this invention. Please refer to the drawings to make the objectives, features, and advantages of this invention more apparent and understandable. It should be understood that the structures, proportions, sizes, etc., depicted in the accompanying drawings are only for illustrative purposes to aid those skilled in the art and are not intended to limit the implementation conditions of this invention. Therefore, they have no substantial technical significance. Any modifications to the structure, changes in proportions, or adjustments to the size, without affecting the effects and objectives achieved by this invention, should still fall within the scope of the technical content disclosed in this invention.

[0046] like Figure 1 As shown, this embodiment provides a vapor deposition apparatus, including: a reaction chamber 100; a base 400 disposed at the bottom of the reaction chamber 100 for supporting a substrate 500; and a gas spray head 300 disposed at the top of the reaction chamber 100, opposite to the base 400, for supplying reactive gas to the surface of the substrate 500. In this embodiment, the vapor deposition apparatus includes, but is not limited to, an atomic layer deposition apparatus. The reactive gas forms a deposited material layer on the surface of the substrate 500. A vacuum pump 200 is disposed around the gas spray head 300 to maintain the vacuum level of the reaction chamber 100. The gas spray head of the vapor deposition apparatus provided in this embodiment can achieve rapid precursor switching while avoiding mixing of different precursors in the gas spray head, and provides a uniform gas supply source to the substrate.

[0047] In this embodiment, as Figure 2 and Figure 3 As shown, the gas spray head 300 includes a gas distribution plate 301, on which a first conveying channel 320 and a second conveying channel 340 are provided; the first conveying channel 320 and the second conveying channel 340 are arranged alternately and concentrically. For details, please refer to [link / reference]. Figure 2 As shown, it illustrates the transport path of the first gas within the first transport channel 320 (see...). Figure 2 (The direction indicated by the middle arrow); please continue to refer to... Figure 3 The diagram illustrates the transport path of the second gas within the second transport channel 340 (see [reference]). Figure 3 (The direction indicated by the middle arrow).

[0048] like Figure 6 and Figure 7 As shown, the gas spray head 300 further includes: a cover plate 302, which covers the gas distribution plate 301. The cover plate 302 is provided with a plurality of first gas communication channels 312 and second gas communication channels 341. The first gas communication channels 312 are used to cross the second conveying channels 340 to connect two adjacent first conveying channels 320. The second gas communication channels 341 are used to cross the first conveying channels 320 to connect two adjacent second conveying channels 340. A first inlet end 310 connected to the first conveying channel 320 is used to convey a first gas into the first conveying channel 320. In this embodiment, the first gas is a first reaction gas or a purge gas. First low-pressure source ( Figure 7 (Not shown in the image), connected to the first outlet end 311 of the first conveying channel 320, for providing low pressure to the first outlet end 311 of the first conveying channel 320.

[0049] Preferably, in this embodiment or other embodiments, the first low-pressure source includes a gas valve for controlling the suction force of the low-pressure source.

[0050] A second inlet end 343, connected to the second conveying channel 340, is used to convey a second gas into the second conveying channel 340; in this embodiment, the second gas is a second reactant gas or a purge gas. Second low-pressure source ( Figure 7 (Not shown in the image), connected to the second outlet end 344 of the second conveying channel 340, for providing low pressure to the second outlet end 344 of the second conveying channel 340.

[0051] Preferably, in this embodiment or other embodiments, the second low-pressure source includes a valve for controlling the suction force of the low-pressure source.

[0052] like Figure 4 , 5As shown in Figures 8 and 9, a plurality of air holes 342 are provided below the first conveying channel 320 and the second conveying channel 340. The air holes 342 are used to supply reaction gas to the surface of the substrate 500 to be processed.

[0053] In this embodiment, the first conveying channel 320 and the second conveying channel 340 prevent different precursors from mixing within the gas spray head 300 (i.e., the first and second conveying channels are not interconnected and independently introduce the corresponding gases into the substrate). The first and second low-pressure sources enable rapid degassing of the gas spray head 300. After the reaction gas enters the first conveying channel 320 or the second conveying channel 340, it diffuses to both sides of the first conveying channel 320 or the second conveying channel 340. Thus, the first and second conveying channels provided in this embodiment have the effects of low flow resistance, low pressure drop, and uniform gas distribution.

[0054] Please continue to refer to this. Figure 4 As shown, in this embodiment, a circular groove 330 is provided at the center of the top surface of the gas distribution plate 301, and a plurality of annular grooves 331 are provided around the circular groove 330. After the cover plate 302 is placed on the top surface of the gas distribution plate 301, the bottom surface of the cover plate 302, the circular groove 330, and the plurality of annular grooves 331 define the first conveying channel 320 and the second conveying channel 340. Figure 3 As shown, the circular groove 330 is part of the second conveying channel 340. The first conveying channel 320 is composed of annular grooves 331, but the present invention is not limited thereto.

[0055] like Figure 6 As shown, multiple first gas communication channels 312 and second gas communication channels 341 are arranged radially along the cover plate 302, and the first gas communication channels 312 and second gas communication channels 341 are not connected to each other. Optionally, the arrangement directions of the first gas communication channels 312 and the second gas communication channels 341 are perpendicular to each other, which is beneficial for the arrangement of pipes and low-pressure sources at the top of the cover plate 302.

[0056] Please continue to refer to this. Figure 2 As shown, each of the first conveying channels 320 includes an inlet and an outlet (the inlet and outlet can be found in the appendix). Figure 2 The dashed arrow in the diagram indicates the location of the outlet (the tail of the dashed arrow indicates the location of the inlet). The line connecting the inlet and the outlet passes through the center of the first conveying channel 320. The outlet of one of the two adjacent first conveying channels 320 is connected to the inlet of the other first conveying channel 320.

[0057] Please continue to refer to this. Figure 3 As shown, each of the second conveying channels 340 includes an inlet and an outlet, the inlet and outlet of which can be found in the appendix. Figure 3 The dashed arrow in the diagram indicates the location of the outlet (the tail of the dashed arrow indicates the location of the inlet). The line connecting the inlet and the outlet passes through the center of the second conveying channel 340. The outlet of one of the two adjacent second conveying channels 340 is connected to the inlet of the other second conveying channel 340.

[0058] Please continue to refer to this. Figure 2 As shown, the first gas communication channel 312 includes an inlet 3120 and an outlet 3121. The inlet 3120 is connected to the outlet of the corresponding first conveying channel 320, and the outlet 3121 is connected to the inlet of the corresponding first conveying channel 320.

[0059] Please continue to refer to this. Figure 3 As shown, the second gas communication channel 340 includes an inlet 3410 and an outlet 3411. The inlet 3410 is connected to the outlet of the corresponding second conveying channel 340, and the outlet 3411 is connected to the inlet of the corresponding second conveying channel 340.

[0060] In this embodiment, the line connecting the inlet and outlet of each of the first conveying channels 320 passes through the center of the first conveying channel 320. The outlet of one of the two adjacent first conveying channels 320 is connected to the inlet of the other first conveying channel 320. This allows the first gas to diffuse from the inlet of one first conveying channel 320 to both sides, then converge at the outlet of this first conveying channel 320, and flow into the inlet of another first conveying channel 320 through the corresponding first gas connecting channel. Then, it diffuses from the inlet of the other first conveying channel 320 to both sides, repeating this process until the first gas diffuses to the outlet of the last first conveying channel 320, i.e., the first outlet end. Thus, this gas transmission method has the effects of low flow resistance, low pressure drop, and uniform gas distribution.

[0061] Please continue to refer to this. Figure 2 and Figure 6 As shown, the inlet 3120 and the outlet 3121 of the first gas communication channel 312 extend circumferentially along the corresponding first conveying channel 320.

[0062] Preferably, the circumferential length of the inlet 3120 is not less than the radial width of the outlet of the corresponding first conveying channel 320; the circumferential length of the outlet 3121 is not less than the radial width of the inlet of the corresponding first conveying channel 320. This allows the first gas to enter the corresponding first gas communication channel more easily, helping to further reduce the pressure drop at the connection point. The flow resistance of the first gas at the inlet and outlet is further reduced, achieving a smooth transition of the first gas between the first conveying channel 320 and the first gas communication channel 312.

[0063] Please continue to refer to this. Figure 3 and Figure 6 As shown, the inlet 3410 and the outlet 3411 of the second gas communication channel 341 extend circumferentially along the corresponding second conveying channel 340.

[0064] Preferably, the circumferential length of the inlet 3410 is not less than the radial width of the outlet of the corresponding second conveying channel 340; the circumferential length of the outlet 3411 is not less than the radial width of the inlet of the corresponding second conveying channel 340. This allows the second gas to enter the corresponding second gas communication channel more easily, helping to further reduce the pressure drop at the connection point, further reducing the flow resistance of the second gas at the inlet and outlet, and achieving a smooth transition of the second gas between the second conveying channel 340 and the second gas communication channel 341.

[0065] like Figures 7 to 9 As shown, in this embodiment, preferably, the inlet of the first conveying channel 320 located in the outer ring region is designated as the first inlet end 310; the outlet of the first conveying channel 320 located in the central region is designated as the first outlet end 311. The gas spray head 300 further includes a first inlet pipe 353 and a first outlet pipe 351, one end of the first inlet pipe 353 being connected to the first inlet end 310, and the other end being connected to a first gas source ( Figure 7 (Not shown in the image) is connected, and the first gas source can supply the first reaction gas and the purge gas. One end of the first outlet pipe 351 is connected to the first outlet end 311, and the other end is connected to the first low-pressure source (…). Figure 7 (The connection is not shown in the image).

[0066] The entrance of the second conveying channel 340 located in the outer ring area is designated as the second entrance end 343; the exit of the second conveying channel 340 located in the central area is designated as the second exit end 344.

[0067] The gas spray head 300 further includes a second inlet pipe 354 and a second outlet pipe 352. One end of the second inlet pipe 354 is connected to the second inlet end 343, and the other end is connected to the second gas source ( Figure 7 (Not shown in the image) is connected, and the second gas source can supply the second reaction gas and the purge gas. One end of the second outlet pipe 352 is connected to the second outlet end 344, and the other end is connected to the second low-pressure source (…). Figure 7 (Not shown in the image) Connection. It can be seen that the circumference of the first conveying channel 320 and the second conveying channel 340 gradually decreases from the outermost region to the innermost region. The circumference of the first conveying channel 320 in the outermost region is relatively long, so the gas takes a long time to diffuse from the first gas source to both sides until it converges at the outlet. As the circumference of the first conveying channel 320 decreases, the time it takes for the gas to diffuse from the inlet of the corresponding first conveying channel 320 to the outlet also decreases. Therefore, connecting the first gas source and the second gas source to the first conveying channel 320 and the second conveying channel 340 located in the outermost region respectively makes it easier to achieve a uniform gas distribution in the first conveying channel 320 and the second conveying channel 340, but the present invention is not limited thereto.

[0068] Alternatively, in other embodiments, the inlet of the first conveying channel 320 located in the outer ring region serves as the first outlet end; the outlet of the first conveying channel 320 located in the central region serves as the first inlet end; the inlet of the second conveying channel 340 located in the outer ring region serves as the second outlet end; and the outlet of the second conveying channel 340 located in the central region serves as the second inlet end.

[0069] Alternatively, in some other embodiments, the inlet of the first conveying channel 320 located in the outer ring region is the first inlet end; the outlet of the first conveying channel 320 located in the central region is the first outlet end; the inlet of the second conveying channel 340 located in the outer ring region is the second outlet end; and the outlet of the second conveying channel 340 located in the central region is the second inlet end.

[0070] Alternatively, in some other embodiments, the inlet of the first conveying channel 320 located in the outer ring region serves as the first outlet end; the outlet of the first conveying channel 320 located in the central region serves as the first inlet end; the inlet of the second conveying channel 340 located in the outer ring region serves as the second inlet end; and the outlet of the second conveying channel 340 located in the central region serves as the second outlet end.

[0071] In this embodiment, the first low-pressure source and the second low-pressure source are both vacuum pumps. A seal is provided around each of the annular grooves. The seal provided in this embodiment can prevent the gases in the first delivery channel 320 and the second delivery channel 340 from permeating and mixing with each other. Also in this embodiment, since the first delivery channel 320 and the second delivery channel 340 are respectively complete circular rings, the seal used to seal the first delivery channel 320 and the second delivery channel 340 can also be a complete circular ring, thereby reducing the process difficulty of manufacturing the gas shower head.

[0072] Please continue to refer to Figure 8 As shown, the cross-sectional shape of the first gas communication channel 312 is in the shape of an arch bridge. Please continue to refer to Figure 9 As shown, the cross-sectional shape of the second gas communication channel 341 is in the shape of an arch bridge. The first gas communication channel 312 and the second gas communication channel 341 with a cross-sectional shape in the shape of an arch bridge are more conducive to reducing the pressure drop compared to a channel structure with a right-angle turn (such as a "冂" shape), can further reduce the gas flow resistance, and can supply gas to the substrate more evenly.

[0073] In some other embodiments, as Figure 10 shown, the difference between this embodiment and the above embodiment is only that the connection manner between two adjacent gas delivery channels (the first delivery channel 320 and the second delivery channel 340) is different. In this embodiment, the gas distribution plate 301 further includes: a plurality of partition walls 36, each of the partition walls 36 is inclined and arranged in the corresponding annular groove (the annular groove here can refer to the position of the first delivery channel 320), and both ends of the partition wall 36 are respectively connected to the two inner walls of the annular groove, so as to achieve the isolation of the delivery channels.

[0074] Please continue to refer to Figure 10 As shown, the structures of the first delivery channel 320 and the second delivery channel 340 are the same (the partition wall in the second delivery channel is not shown). Each of the first delivery channels 320 includes an inlet and an outlet, and the inlet and the outlet are respectively located on both sides of the partition wall 36; the outlet of one of the adjacent first delivery channels 320 is connected to the inlet of the other first delivery channel 320 through the first gas communication channel 312, so that the first gas diffuses in a spiral shape towards the first outlet end 311. In this embodiment, the inlet of the first delivery channel 320 located in the outermost circle serves as the first inlet end 310 and is connected to the first gas source.

[0075] Please continue to refer to Figure 10As shown, the tangent at the connection point between the partition wall 36 and the outer wall of the corresponding first conveying channel 320 forms an angle with the partition wall 36, the angle ranging from 15° to 45°. This embodiment is similar to the one described above. Figures 1-9 Compared to the illustrated embodiment, this embodiment, through the partition wall 36, allows the first or second gas to travel at a smaller angle into the corresponding gas communication channel at the partition wall 36. Therefore, the pressure drop generated at the position where it meets the gas communication channel is smaller, and the flow resistance of the gas at the inlet and outlet is further reduced, thereby achieving a smooth transition of the gas between the gas communication channels, reducing the pressure drop, and improving the uniformity of gas distribution.

[0076] Please continue to refer to this. Figure 10 As shown, the partition walls 36 located in the first conveying channel 320 are arranged in a spiral pattern; the partition walls 36 located in the second conveying channel 340 are also arranged in a spiral pattern.

[0077] Multiple first gas communication channels 312 are arranged in a spiral pattern on the cover plate; multiple second gas communication channels are also arranged in a spiral pattern on the cover plate. This achieves a bridge-like connection of the conveying channels. This connection method still ensures that the seal located on the groove wall of the annular groove remains a complete annular shape, thereby reducing the complexity of the manufacturing process.

[0078] Furthermore, this embodiment also provides a method of using the vapor deposition apparatus as described above, including:

[0079] Step a: Introduce the first reaction gas into the first delivery channel 320, while the second low-pressure source is in a closed state; the first reaction gas diffuses to the surface of the substrate 500 to be processed through the corresponding vent 342. Optionally, the first low-pressure source is turned on simultaneously; at this time, the opening degree of the first low-pressure source is relatively small, which is more conducive to the diffusion of the first reaction gas than turning off the first low-pressure source.

[0080] Optionally, in this embodiment or some other embodiments, purge gas may be introduced into the second conveying channel 340. In this case, by introducing a small amount of purge gas into the second conveying channel 340, the first reaction gas flowing out of the vent 342 below the first conveying channel 320 can be prevented from entering the second conveying channel 340 due to the pressure difference.

[0081] Step b: Stop the flow of the first reaction gas and introduce purge gas into the first delivery channel 320, with the first low-pressure source in the open state. In this step, the opening degree of the valve of the first low-pressure source is gradually increased from small to large. When the opening degree is small, the first reaction gas in the vent 342 can be forced into the reaction chamber; when the opening degree is large, rapid gas exchange can be achieved. No gas is supplied to the second delivery channel 340, and the second low-pressure source is in the closed state.

[0082] Step c: Turn off the first low-pressure source and introduce the second reaction gas into the second delivery channel 340. The second reaction gas diffuses to the surface of the substrate 500 to be processed through the corresponding vent 342. Optionally, the second low-pressure source is turned on at the same time; in this case, the opening degree of the second low-pressure source is relatively small, which is more conducive to the diffusion of the second reaction gas than turning off the second low-pressure source.

[0083] Optionally, in this embodiment or some other embodiments, purge gas may be introduced into the first conveying channel 320, while the first low-pressure source is in a closed state. This prevents the second reaction gas flowing out from the vent 342 below the second conveying channel 340 from entering the first conveying channel 320 due to the pressure difference.

[0084] Step d: Stop the flow of the second reaction gas and introduce purge gas into the second delivery channel, with the second low-pressure source in the open state. In this step, the opening degree of the gas valve of the second low-pressure source is gradually increased. When the opening degree is small, the second reaction gas in the gas port 342 can be forced into the reaction chamber; when the opening degree is large (or the second low-pressure source is turned on), rapid gas exchange can be achieved. No gas is supplied to the first delivery channel 320, and the first low-pressure source is in the closed state.

[0085] Repeat steps a through d.

[0086] Therefore, by introducing purging gas into the first or second conveying channel while simultaneously drawing a vacuum, residual reaction gas in the first / second conveying channel can be quickly removed, preventing the two reaction gases from reacting and generating deposits in the gas spray head.

[0087] It should be noted that, in this document, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitations, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element.

[0088] In the description of this invention, it should be understood that the terms "center," "height," "thickness," "upper," "lower," "vertical," "horizontal," "top," "bottom," "inner," "outer," "axial," "radial," and "circumferential," etc., indicating orientation or positional relationships, are based on the orientation or positional relationships shown in the accompanying drawings and are only for the convenience of describing the invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific orientation, or be constructed and operated in a specific orientation, and therefore should not be construed as a limitation of the invention. In the description of this invention, unless otherwise stated, "a plurality of" means two or more.

[0089] In the description of this invention, unless otherwise explicitly specified and limited, the terms "installation," "connection," "linking," and "fixing" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral part; they can refer to a mechanical connection or an electrical connection; they can refer to a direct connection or an indirect connection through an intermediate medium; they can refer to the internal communication of two components or the interaction between two components. Those skilled in the art can understand the specific meaning of the above terms in this invention based on the specific circumstances.

[0090] In this invention, unless otherwise explicitly specified and limited, "above" or "below" the second feature can include direct contact between the first and second features, or contact between the first and second features through another feature between them. Furthermore, "above," "over," and "on top" of the second feature includes the first feature directly above or diagonally above the second feature, or simply indicates that the first feature is at a higher horizontal level than the second feature. "Below," "below," and "under" the second feature includes the first feature directly below or diagonally below the second feature, or simply indicates that the first feature is at a lower horizontal level than the second feature.

[0091] Although the present invention has been described in detail through the preferred embodiments above, it should be understood that the above description should not be considered as a limitation of the present invention. Various modifications and substitutions to the present invention will be apparent to those skilled in the art after reading the above description. Therefore, the scope of protection of the present invention should be defined by the appended claims.

Claims

1. A gas spray head, characterized in that, include: A gas distribution plate is provided with a gas conveying channel, which includes a plurality of first conveying channels and a plurality of second conveying channels, which are arranged alternately and concentrically. A cover plate that covers the gas distribution plate, the cover plate having a gas communication channel, the gas communication channel including a plurality of first gas communication channels and a plurality of second gas communication channels; The first gas communication channel crosses the second delivery channel and connects two adjacent first delivery channels; The second gas communication channel crosses the first delivery channel and connects two adjacent second delivery channels; The first inlet end, which is connected to the first conveying channel, is used to convey the first gas into the first conveying channel; A first low-pressure source is connected to the first outlet end of the first conveying channel and is used to provide low pressure to the first outlet end; The second inlet end, which is connected to the second conveying channel, is used to convey the second gas into the second conveying channel; The second low-pressure source is connected to the second outlet end of the second conveying channel and is used to provide low pressure to the second outlet end; The first and second conveying channels are provided with a plurality of air holes below them, which are used to supply reactive gas to the surface of the substrate to be processed.

2. The gas spray head as described in claim 1, characterized in that, A circular groove is provided at the center of the top surface of the gas distribution plate, and multiple annular grooves are provided around the circular groove. The cover plate covers the top surface of the gas distribution plate.

3. The gas spray head as described in claim 2, characterized in that, The first gas communication channel and the second gas communication channel are respectively arranged radially along the cover plate.

4. The gas spray head as described in claim 3, characterized in that, The first gas communication channel and the second gas communication channel are arranged perpendicular to each other.

5. The gas spray head as described in claim 3, characterized in that, Each of the gas delivery channels includes an inlet and an outlet; the outlet of one of two adjacent first delivery channels is connected to the inlet of the other; the outlet of one of two adjacent second delivery channels is connected to the inlet of the other.

6. The gas spray head as described in claim 2, characterized in that, Also includes: Each of the annular grooves is also provided with an inclined partition wall, which divides the corresponding annular groove into two non-connected parts.

7. The gas spray head as described in claim 6, characterized in that, Each of the gas delivery channels includes an inlet and an outlet located on both sides of the partition wall; the outlet of one of the two adjacent first delivery channels is connected to the inlet of the other through the first gas communication channel, so that the first gas diffuses in a spiral shape toward the first outlet end; the outlet of one of the two adjacent second delivery channels is connected to the inlet of the other through the second gas communication channel, so that the second gas diffuses in a spiral shape toward the second outlet end.

8. The gas spray head as described in claim 7, characterized in that, The tangent at the connection point between the partition wall and the outer wall of the corresponding annular groove forms an angle with the partition wall, the angle being 15° to 45°.

9. The gas spray head as described in claim 8, characterized in that, The partition walls located within the first conveying channel are arranged in a spiral pattern. The partition walls located within the second conveying channel are arranged in a spiral pattern.

10. The gas spray head as described in claim 9, characterized in that, The plurality of first gas communication channels are arranged in a spiral pattern on the cover plate; The plurality of second gas communication channels are arranged in a spiral pattern on the cover plate.

11. The gas spray head as described in claim 5 or 10, characterized in that, The gas communication channel includes an inlet and an outlet. The inlet is connected to the outlet of the corresponding gas delivery channel, and the outlet is connected to the inlet of the corresponding gas delivery channel.

12. The gas spray head as described in claim 11, characterized in that, The inlet and outlet holes extend circumferentially along the corresponding gas delivery channels.

13. The gas spray head as described in claim 12, characterized in that, The circumferential length of the inlet of the gas communication channel is not less than the radial width of the outlet of the corresponding gas delivery channel; the circumferential length of the outlet of the gas communication channel is not less than the radial width of the inlet of the corresponding gas delivery channel.

14. The gas spray head as described in claim 13, characterized in that, The entrance of the first conveying channel located on the outermost side serves as either the first inlet end or the first outlet end. The outlet of the first conveying channel located at the innermost side serves as the other of the first inlet end and the first outlet end; The entrance to the outermost second conveying channel serves as one of the second inlet end and the second outlet end. The outlet of the second conveying channel located at the innermost side serves as the other of the second inlet and the second outlet.

15. The gas spray head as described in claim 1, characterized in that, Both the first low-pressure source and the second low-pressure source include a valve for controlling the suction force of the low-pressure source.

16. The gas spray head as described in claim 2, characterized in that, Each slot is surrounded by an annular seal.

17. A vapor deposition apparatus, characterized in that, include: reaction chamber; A base, located at the bottom of the interior of the reaction chamber, is used to support the substrate; The gas spray head as described in any one of claims 1 to 16, wherein the gas spray head is disposed at the top of the reaction chamber and opposite to the base, for providing reaction gas to the surface of the substrate.

18. A method of using the vapor deposition apparatus as described in claim 17, characterized in that, include: Step a: Introduce the first reaction gas into the first delivery channel, while the second low-pressure source is turned off; Step b: Stop the flow of the first reaction gas, introduce purge gas into the first delivery channel, and keep the first low-pressure source in the on state; Step c: Turn off the first low-pressure source and introduce the second reaction gas into the second delivery channel; Step d: Stop the flow of the second reaction gas, introduce purge gas into the second delivery channel, and keep the second low-pressure source in the on state; Repeat steps a to d.

19. The method of using the vapor deposition apparatus as described in claim 18, characterized in that, Also includes: While performing step a, turn on the first low-pressure source; While performing step c, turn on the second low-pressure source.

20. The method of using the vapor deposition apparatus as described in claim 18 or 19, characterized in that, Also includes: While performing step a, purge gas is introduced into the second conveying channel; while performing step c, purge gas is introduced into the first conveying channel.

21. The method of using the vapor deposition apparatus as described in claim 18, characterized in that, When performing step b, the opening degree of the gas valve of the first low-pressure source is gradually increased from small to large; when performing step d, the opening degree of the gas valve of the second low-pressure source is gradually increased from small to large.

Images