A semiconductor power device with a hot melt component

Abstract

The present invention relates to a semiconductor power device with a hot melt assembly for use in the field of semiconductor power devices, comprising: a transparent cover, wherein a reflective plate is provided inside the transparent cover; a sealing assembly, wherein the sealing assembly is integrally formed with the transparent cover; a base assembly, wherein the sealing assembly is fixed to the base assembly by plastic sealing; a reflective assembly; and a pin assembly. The reflective assembly includes a substrate provided inside the transparent cover, wherein the top of the substrate is covered with an N-type semiconductor. By using the hot melt assembly, the driving assembly, and the pin assembly, the entire power device has a safety protection structure, which can automatically disconnect the circuit in the event of a continuous overheating of the internal temperature of the power device, thereby avoiding the occurrence of a short circuit and self-ignition of the high-power semiconductor power device due to a continuous high temperature. The use of the sealing assembly and the base assembly ensures the overall sealing and stability of the high-power semiconductor power device.

Description

Technical Field

[0001] The present invention relates to a semiconductor power device, and in particular to a semiconductor power device with a hot melt component applied in the field of semiconductor power devices. Background Art

[0002] Packaged semiconductor power devices are the shells used to install semiconductor power devices. They play the role of placing, fixing, sealing, protecting devices and enhancing electrothermal performance. They are also the bridge that communicates the internal world of the device with the external circuit. The contacts on the device are connected to the pins of the package shell with wires. These pins are connected to other devices through wires on the printed circuit board. Therefore, packaging plays an important role in semiconductor power devices. There are many types of semiconductor power devices, and diodes are one of the most common semiconductor power devices.

[0003] Since high-power diodes generate a large amount of heat during use, it is not convenient to perform efficient heat dissipation treatment on the high-power diodes.

[0004] The specification of Chinese patent CN218867087U discloses a high-power diode, which is intended to solve the technical problem that it is inconvenient to perform efficient heat dissipation treatment on high-power diodes under the existing technology; an epoxy resin seal is fixedly installed on the upper end of the mounting plate, a cooling assembly is provided on the inner side of the mounting plate, a threaded joint is fixedly installed on the upper end of the mounting plate, a heat dissipation assembly is provided on the outer side of the threaded joint, the heat dissipation assembly is located above the mounting plate, a chip is provided on the inner side of the epoxy resin seal, a negative pin is provided at the bottom end of the chip, a metal wire is provided at the bottom end of the chip, and a positive pin is provided at the bottom end of the metal wire.

[0005] Based on the above search and in combination with existing technologies, it was found that existing semiconductor power devices can only dissipate heat efficiently. However, when the internal temperature of the device is too high, the continued operation of the semiconductor power device may cause fire, posing a high safety hazard. Therefore, a semiconductor power device with a hot melt assembly is proposed to improve the above problem. Summary of the Invention

[0006] In view of the above-mentioned existing technologies, the technical problem to be solved by the present invention is that existing semiconductor power devices can only dissipate heat efficiently, but when the internal temperature of the device is too high, the continued operation of the semiconductor power device will cause a short circuit or even a fire, posing a high safety hazard.

[0007] To solve the above problems, the present invention provides a semiconductor power device with a hot melt assembly, comprising:

[0008] A transparent cover, wherein a reflective plate is provided inside the transparent cover;

[0009] A sealing assembly, wherein the sealing assembly is integrally formed with the transparent cover;

[0010] A base assembly, wherein the sealing assembly is fixed to the base assembly by plastic sealing;

[0011] Reflective components;

[0012] Pin assembly;

[0013] Drive components;

[0014] The heat dissipation device is a heat dissipation device, and the heat dissipation device is a heat dissipation device. The heat dissipation device is a heat dissipation device, and a heat dissipation device is used to dissipate heat from the bottom of the heat dissipation device. The heat dissipation device is a heat dissipation device, and a heat dissipation device is used to dissipate heat from the bottom of the heat dissipation device.

[0015] The entire power device has a safety protection structure, which can automatically cut off the circuit when the internal temperature of the power device continues to overheat, avoiding the situation where the high-power semiconductor power device continues to be overheated and causes short circuit and spontaneous combustion.

[0016] In the above, the reflective component includes a substrate arranged inside the transparent cover, the top of the substrate is covered with an N-type semiconductor, the top of the N-type semiconductor is covered with a P-type semiconductor, the top of the N-type semiconductor and the P-type semiconductor are both welded with wires, and the ends of the two groups of wires away from the N-type semiconductor and the P-type semiconductor are welded and fixed to the pin assembly, and a reflector is arranged outside the N-type semiconductor, the P-type semiconductor and the substrate, and the reflector is trumpet-shaped. The bottom of the reflector is filled with resin to form a transparent resin cover, and the transparent resin cover wraps the N-type semiconductor, the P-type semiconductor and the substrate.

[0017] As a further supplement to the present application, when the operating temperature of the power device is too high, the heat can be quickly transferred to the heat conducting plate through the copper plate. The multi-layer structure of the heat conducting plate can transfer the heat to the first heat conducting block and the second heat conducting block. Since the cross-sections of the first heat conducting block and the second heat conducting block are both semicircular, and the inner diameter of the first heat conducting block is larger than the diameter of the second heat conducting block, the heat generated by the power device can be concentrated at the bottom of the second heat conducting block. At the same time, the second heat conducting block and the fixing seat are in close contact, and the heat absorbed by the second heat conducting block will be transferred to the encapsulating wax located inside the thermoplastic tube. The encapsulating wax will gradually melt when encountering continuous heat. When the encapsulating wax melts, it loses its fixing and limiting effect on the second spring.

[0018] As another improvement of the present application, the drive assembly includes a sliding column inserted into the inside of the fixed seat, the end of the second spring away from the top inner wall of the mounting groove is fixedly connected to the top outer wall of the sliding column, the bottom of the sliding column is fixedly connected to a rotating seat, one side of the rotating seat is rotatably connected to a push rod, and the end of the push rod away from the rotating seat is fixedly connected to the push column.

[0019] As another improvement supplement to the present application, during the process of the sliding column popping out from the inside of the fixed seat, the horizontal angle between the two sets of push rods connected to the bottom of the sliding column and the sliding column will become smaller, thereby driving the push column at one end of the push rod to push the metal sheet out from the inside of the contact groove.

[0020] As another improvement of the present application, the top outer wall of the sealing seat is fixedly connected to a fixing cover, and the circumferential outer wall of the fixing cover is provided with a limiting groove, one end of the push rod passes through the inside of the limiting groove, and the pin assembly includes an upper pin and a lower pin, the lower pin is fixedly connected to the sealing seat, the upper pin is fixedly connected to the transparent cover, a contact groove is provided on the top of the lower pin, the bottom end of the upper pin is rotatably connected to a rotating shaft, and the upper pin is rotatably connected to a metal sheet via the rotating shaft, a first spring is fixedly connected to the outer wall of one side of the metal sheet, and an end of the first spring away from the metal sheet is fixedly connected to the outer wall of one side of the upper pin, one side of the push column is in contact with the metal sheet, and the metal sheet is located inside the contact groove.

[0021] As another improved supplement to the present application, the upper pin and the lower pin are disconnected, thereby avoiding short circuit and fire of the entire high-power semiconductor power device when working in a high-temperature environment for a long time, and improving safety.

[0022] As another improvement of the present application, the sealing assembly includes an extended ring plate arranged on the circumferential outer wall of the transparent cover, the top of the extended ring plate is provided with a packaging groove, the bottom of the packaging groove is provided with card holes distributed in a circular shape at equal distances, the bottom of the extended ring plate is fixedly connected with a card ring plate, the base assembly includes a sealing seat arranged below the extended ring plate, the top of the sealing seat is provided with a card ring groove, the card ring plate is clamped with the card ring groove, the top of the sealing seat is fixedly connected with card columns distributed in a circular shape at equal distances, one end of the card column passes through the inside of the card hole, and a guide groove is provided on one side of the extended ring plate and the sealing seat, and the guide groove is connected with the card ring groove.

[0023] As another improvement supplement of the present application, the overall sealing and stability of the entire high-power semiconductor power device are guaranteed. During the cooperation between the extension ring plate and the sealing seat, one end of the clamping column can be passed through the inside of the clamping hole first. At the same time, the clamping ring plate located at the bottom of the extension ring plate will be clamped in the inside of the clamping ring groove, and then the packaging glue is injected through the packaging groove to ensure the sealing and stability between the sealing assembly and the base assembly. During the injection of the packaging glue, due to the setting of the guide groove, the packaging glue can be tightly fixed to the sealing seat, clamping column, clamping ring plate and extension ring plate, further improving the stability of the entire power device.

[0024] In summary, after adopting the above structure, the present invention has the following advantages compared with the prior art:

[0025] 1. The use of the above-mentioned hot melt assembly, drive assembly and pin assembly provides a safety protection structure inside the entire power device, which can automatically cut off the circuit when the internal temperature of the power device continues to overheat, thereby avoiding the occurrence of short circuit and spontaneous combustion of high-power semiconductor power devices due to continuous high temperature. When the power device is operating normally, the packaging wax inside the thermoplastic tube can ensure the stability of the second spring, so that the second spring is always in a compressed state inside the thermoplastic tube. When the operating temperature of the power device is too high, the copper plate can quickly transfer heat to the heat conducting sheet. The multi-layer structure of the heat conducting sheet can transfer heat to the first heat conducting block and the second heat conducting block. Since the cross-sections of the first heat conducting block and the second heat conducting block are both semicircular, and the inner diameter of the first heat conducting block is larger than the diameter of the second heat conducting block, the heat generated by the power device can be concentrated at the bottom of the second heat conducting block.

[0026] At the same time, the second heat-conducting block and the fixing seat are in close contact, and the heat absorbed by the second heat-conducting block will be transferred to the packaging wax inside the thermoplastic tube. The packaging wax will gradually melt when encountering continuous heat. When the packaging wax melts, it loses its fixing and limiting effect on the second spring. At this time, the second spring will quickly recover its deformation and pop out the sliding column below it. In the process of the sliding column popping out from the fixing seat, the two sets of push rods connected to the bottom of the sliding column will rotate and the horizontal angle between them will become smaller, thereby driving the push column at one end of the push rod to push the metal sheet out of the contact groove, realizing the disconnection of the upper pin and the lower pin, avoiding the short circuit and fire of the entire high-power semiconductor power device when working in a high-temperature environment for a long time, and improving safety.

[0027] 2. The above-mentioned sealing assembly and base assembly are used to ensure the overall sealing and stability of the entire high-power semiconductor power device. During the cooperation between the extension ring plate and the sealing seat, one end of the clamping column can be passed through the inside of the clamping hole first. At the same time, the clamping ring plate located at the bottom of the extension ring plate will be clamped in the inside of the clamping ring groove, and then the packaging glue is injected through the packaging groove to ensure the sealing and stability between the sealing assembly and the base assembly. During the injection of the packaging glue, due to the setting of the guide groove, the packaging glue can be tightly fixed to the sealing seat, clamping column, clamping ring plate and extension ring plate, further improving the stability of the entire power device. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] Figure 1 This is a schematic diagram of the overall half-section structure of the first embodiment of the present application;

[0029] Figure 2 This is a schematic diagram of the three-dimensional structure of the first embodiment of the present application;

[0030] Figure 3 This is the first implementation method of this application Figure 1 Schematic diagram of the enlarged structure at A in the middle;

[0031] Figure 4 This is the first implementation method of this application Figure 1 Schematic diagram of the enlarged structure at B in the middle;

[0032] Figure 5 This is the second implementation method of this application Figure 1 Schematic diagram of the enlarged structure at C in the middle;

[0033] Figure 6 This is a schematic diagram of the internal structure of the transparent cover according to the first embodiment of the present application;

[0034] Figure 7 This is the first implementation method of this application Figure 6 The enlarged structural diagram at D in the middle;

[0035] Figure 8This is a schematic diagram of the metal sheet movement process in the first embodiment of the present application;

[0036] Figure 9 This is a schematic diagram of the movement of two groups of push rods in the first embodiment of the present application;

[0037] Figure 10 This is a schematic diagram of the hot melt assembly structure of the first embodiment of this application;

[0038] Figure 11 This is the first implementation method of this application Figure 10 Schematic diagram of the enlarged structure at E in the middle.

[0039] Description of the numbers in the figure:

[0040] 1. Transparent cover; 2. Sealing assembly; 2001. Extension ring plate; 2002. Packaging groove; 2003. Snap ring plate; 2004. Guide groove; 3. Base assembly; 3001. Sealing seat; 3002. Snap column; 3003. Snap ring groove; 4. Pin assembly; 4001. Upper pin; 4002. Lower pin; 4003. Rotating shaft; 4004. First spring; 4005. Metal sheet; 4006. Contact groove; 5. Reflector; 6. Reflective assembly; 6001. Wire; 6002. Substrate; 6003. N-type semiconductor Body; 6004, P-type semiconductor; 6005, transparent resin cover; 6006, reflector; 7, drive assembly; 7001, sliding column; 7002, rotating seat; 7003, push rod; 7004, fixed cover; 7005, limit groove; 7006, push column; 8, hot melt assembly; 8001, first heat conducting block; 8002, second heat conducting block; 8003, fixed seat; 8004, heat absorbing groove; 8005, thermoplastic tube; 8006, packaging wax; 8007, second spring; 8008, copper plate; 8009, thermal pad. DETAILED DESCRIPTION

[0041] The following describes two implementation methods of the present application in detail with reference to the accompanying drawings.

[0042] The first implementation method:

[0043] The present invention provides a semiconductor power device with a hot melt component, see Figures 1-11 ,include:

[0044] A transparent cover 1, wherein a reflective plate 5 is provided inside the transparent cover 1;

[0045] The sealing component 2 is integrally formed with the transparent cover 1;

[0046] The base component 3, the sealing component 2 and the base component 3 are fixed by plastic sealing;

[0047] Reflective component 6;

[0048] Pin assembly 4;

[0049] The reflective assembly 6 includes a substrate 6002 disposed within the transparent cover 1. The top of the substrate 6002 is covered with an N-type semiconductor 6003, and the top of the N-type semiconductor 6003 is covered with a P-type semiconductor 6004. Wires 6001 are welded to the tops of the N-type semiconductor 6003 and the P-type semiconductor 6004. The ends of the two sets of wires 6001 away from the N-type semiconductor 6003 and the P-type semiconductor 6004 are welded and fixed to the pin assembly 4. A reflector 6006 is disposed outside the N-type semiconductor 6003, the P-type semiconductor 6004, and the substrate 6002. The reflector 6006 is trumpet-shaped, and the bottom of the reflector 6006 is filled with resin to form a transparent resin cover 6005. The transparent resin cover 6005 encloses the N-type semiconductor 6003, the P-type semiconductor 6004, and the substrate 6002.

[0050] Drive assembly 7;

[0051] Hot melt assembly 8, such as Figure 1 As shown, the entire power device has a safety protection structure, which can automatically cut off the circuit when the internal temperature of the power device continues to overheat, avoiding the situation where the high-power semiconductor power device continues to be overheated and causes short circuit and self-ignition.

[0052] In the present invention, the hot melt assembly 8 includes a copper plate 8008 arranged at the bottom of the reflector 6006, the bottom outer wall of the copper plate 8008 is fixedly connected to a heat conducting sheet 8009, the bottom of the heat conducting sheet 8009 is fixedly connected to a first heat conducting block 8001, the bottom of the first heat conducting block 8001 is provided with a second heat conducting block 8002, the cross-sections of the first heat conducting block 8001 and the second heat conducting block 8002 are both semicircular, the inner diameter of the first heat conducting block 8001 is larger than the diameter of the second heat conducting block 8002, a fixing seat 8003 is provided below the second heat conducting block 8002, and a heat absorbing groove is provided on the top of the fixing seat 8003 8004, an arc groove is provided at the bottom of the heat absorption groove 8004, and the arc groove cooperates with the second heat conducting block 8002. A mounting groove is provided inside the fixing seat 8003, and a thermoplastic tube 8005 is provided inside the mounting groove. The interior of the thermoplastic tube 8005 is filled with packaging wax 8006, and a second spring 8007 is provided inside the thermoplastic tube 8005. The top end of the second spring 8007 is fixedly connected to the top inner wall of the mounting groove. The second spring 8007 is fixed to the interior of the thermoplastic tube 8005 through the packaging wax 8006. The second spring 8007 is in a compressed state inside the thermoplastic tube 8005. Figure 1 、 3As shown in Figure 4, when the operating temperature of the power device is too high, the heat can be quickly transferred to the heat conducting sheet 8009 through the copper plate 8008. The multi-layer structure of the heat conducting sheet 8009 can transfer the heat to the first heat conducting block 8001 and the second heat conducting block 8002. Since the cross-sections of the first heat conducting block 8001 and the second heat conducting block 8002 are both semicircular, and the inner diameter of the first heat conducting block 8001 is larger than the diameter of the second heat conducting block 8002, the heat generated by the power device can be concentrated at the bottom of the second heat conducting block 8002. At the same time, the second heat conducting block 8002 and the fixing seat 8003 are in close contact, and the heat absorbed by the second heat conducting block 8002 will be transferred to the packaging wax 8006 located inside the thermoplastic tube 8005. The packaging wax 8006 will gradually melt when encountering continuous heat. When the packaging wax 8006 melts, it loses its fixing and limiting effect on the second spring 8007.

[0053] In the present invention, the driving assembly 7 includes a slide post 7001 inserted into the interior of the fixed seat 8003, the end of the second spring 8007 away from the top inner wall of the installation groove is fixedly connected to the top outer wall of the slide post 7001, the bottom of the slide post 7001 is fixedly connected to the rotating seat 7002, one side of the rotating seat 7002 is rotatably connected to the push rod 7003, and the end of the push rod 7003 away from the rotating seat 7002 is fixedly connected to the push post 7006. Figure 6-7 As shown, during the process of the sliding column 7001 popping out from the interior of the fixing seat 8003, the horizontal angle between the two sets of push rods 7003 connected to the bottom of the sliding column 7001 and the sliding column 7001 will become smaller.

[0054] In the present invention, the top outer wall of the sealing seat 3001 is fixedly connected to a fixed cover 7004, and the circumferential outer wall of the fixed cover 7004 is provided with a limiting groove 7005. One end of the push rod 7003 passes through the interior of the limiting groove 7005. The pin assembly 4 includes an upper pin 4001 and a lower pin 4002. The lower pin 4002 is fixedly connected to the sealing seat 3001, and the upper pin 4001 is fixedly connected to the transparent cover 1. The top of the lower pin 4002 is provided with a contact groove 4006. The bottom end of the upper pin 4001 is rotatably connected to a rotating shaft 4003, and the upper pin 4001 is rotatably connected to a metal sheet 4005 via the rotating shaft 4003. A first spring 4004 is fixedly connected to an outer wall of one side of the metal sheet 4005. One end of the first spring 4004 away from the metal sheet 4005 is fixedly connected to an outer wall of one side of the upper pin 4001. One side of the push column 7006 contacts the metal sheet 4005, and the metal sheet 4005 is located inside the contact groove 4006. Figure 7 As shown, the push column 7006 at one end of the push rod 7003 can be driven to push the metal sheet 4005 out from the inside of the contact groove 4006, thereby achieving the disconnection of the upper pin 4001 and the lower pin 4002, avoiding the short circuit and fire of the entire high-power semiconductor power device when working in a high-temperature environment for a long time, and improving safety.

[0055] To sum up: The working principle of the first embodiment is: when the operating temperature of the power device is too high, the heat can be quickly transferred to the heat conducting sheet 8009 through the copper plate 8008. The multi-layer structure of the heat conducting sheet 8009 can transfer the heat to the first heat conducting block 8001 and the second heat conducting block 8002. Since the cross-sections of the first heat conducting block 8001 and the second heat conducting block 8002 are both semicircular, and the inner diameter of the first heat conducting block 8001 is larger than the diameter of the second heat conducting block 8002, the heat generated by the power device can be concentrated at the bottom of the second heat conducting block 8002. At the same time, the second heat conducting block 8002 and the fixing seat 8003 are in close contact, which will transfer the heat absorbed by the second heat conducting block 8002 to the packaging wax 8006 located inside the thermoplastic tube 8005. In the process, the packaging wax 8006 will gradually melt when encountering continuous heat. When the packaging wax 8006 melts, it loses its fixing and limiting effect on the second spring 8007. At this time, the second spring 8007 will quickly recover its deformation and pop out the sliding column 7001 below it. In the process of the sliding column 7001 popping out from the inside of the fixing seat 8003, the two sets of push rods 7003 connected to the bottom of the sliding column 7001 and the horizontal angle between them will become smaller, thereby driving the push column 7006 at one end of the push rod 7003 to push the metal sheet 4005 out from the inside of the contact groove 4006, thereby realizing the disconnection of the upper pin 4001 and the lower pin 4002, avoiding the short circuit and fire of the entire high-power semiconductor power device when working in a high-temperature environment for a long time, and improving safety.

[0056] Second implementation method:

[0057] This embodiment adds the following structure on the basis of embodiment 1, and is specifically configured as follows: Figure 5As shown, the sealing component 2 includes an extended ring plate 2001 arranged on the outer circumferential wall of the transparent cover 1, a packaging groove 2002 is provided on the top of the extended ring plate 2001, and clamping holes equidistantly distributed in a circle are provided at the bottom of the packaging groove 2002. The bottom of the extended ring plate 2001 is fixedly connected with a clamping plate 2003, and the base component 3 includes a sealing seat 3001 arranged below the extended ring plate 2001, a clamping ring groove 3003 is provided on the top of the sealing seat 3001, and the clamping ring plate 2003 is clamped with the clamping ring groove 3003. The top of the sealing seat 3001 is fixedly connected with a clamping column 3002 equidistantly distributed in a circle, and one end of the clamping column 3002 passes through the inside of the clamping hole. A guide groove 2004 is provided on one side of the extended ring plate 2001 and the sealing seat 3001. 2004 is connected with the retaining ring groove 3003, which ensures the overall sealing and stability of the entire high-power semiconductor power device. During the cooperation between the extended ring plate 2001 and the sealing seat 3001, one end of the clamping column 3002 can be passed through the inside of the clamping hole first. At the same time, the retaining ring plate 2003 located at the bottom of the extended ring plate 2001 will be clamped in the retaining ring groove 3003, and then the packaging glue is injected through the packaging groove 2002 to ensure the sealing and stability between the sealing component 2 and the base component 3. During the injection of the packaging glue, due to the setting of the guide groove 2004, the packaging glue can be tightly fixed to the sealing seat 3001, the clamping column 3002, the retaining ring plate 2003 and the extended ring plate 2001, further improving the stability of the entire power device.

[0058] In view of current actual needs, the protection scope of the above-mentioned implementation mode adopted in this application is not limited to this. Various changes made within the knowledge scope of technical personnel in this field without departing from the concept of this application still fall within the protection scope of the present invention.

Claims

1. A semiconductor power device having a hot melt component, characterized in that: include: A transparent cover (1), wherein a reflective plate (5) is provided inside the transparent cover (1); A sealing component (2), wherein the sealing component (2) and the transparent cover (1) are integrally formed; A base assembly (3), wherein the sealing assembly (2) and the base assembly (3) are fixed by plastic sealing; A reflective component (6); the reflective component (6) comprises a substrate (6002) disposed inside the transparent cover (1); the top of the substrate (6002) is covered with an N-type semiconductor (6003); the top of the N-type semiconductor (6003) is covered with a P-type semiconductor (6004); and a reflective cover (6006) is disposed outside the P-type semiconductor (6004) and the substrate (6002); Pin assembly (4); Drive assembly (7); A hot melt assembly (8), the hot melt assembly (8) comprising a copper plate (8008) arranged at the bottom of the reflector (6006), a heat conducting plate (8009) fixedly connected to the outer wall of the bottom of the copper plate (8008), a first heat conducting block (8001) fixedly connected to the bottom of the heat conducting plate (8009), a second heat conducting block (8002) arranged at the bottom of the first heat conducting block (8001), a fixing seat (8003) arranged below the second heat conducting block (8002), a mounting groove provided inside the fixing seat (8003), a thermoplastic tube (8005) arranged inside the mounting groove, A second spring (8007) is provided inside the thermoplastic tube (8005), and the drive assembly (7) includes a slide column (7001) inserted into the interior of the fixed seat (8003), and one end of the second spring (8007) away from the top inner wall of the installation groove is fixedly connected to the top outer wall of the slide column (7001), and the bottom of the slide column (7001) is fixedly connected to a rotating seat (7002), and one side of the rotating seat (7002) is rotatably connected to a push rod (7003), and one end of the push rod (7003) away from the rotating seat (7002) is fixedly connected to a push column (7006).

2. The semiconductor power device with a hot melt assembly according to claim 1, characterized in that: The sealing assembly (2) comprises an extension ring plate (2001) arranged on the circumferential outer wall of the transparent cover (1); a packaging groove (2002) is provided on the top of the extension ring plate (2001); clamping holes distributed in a circular pattern at equal distances are provided on the bottom of the packaging groove (2002); and a clamping ring plate (2003) is fixedly connected to the bottom of the extension ring plate (2001).

3. The semiconductor power device with a hot melt assembly according to claim 2, characterized in that: The base assembly (3) comprises a sealing seat (3001) arranged below the extension ring plate (2001), a snap ring groove (3003) is provided on the top of the sealing seat (3001), the snap ring plate (2003) is snap-connected to the snap ring groove (3003), and the top of the sealing seat (3001) is fixedly connected with snap columns (3002) distributed in a circular shape at equal distances, one end of the snap columns (3002) passes through the inside of the snap hole, and a guide groove (2004) is provided on one side of the extension ring plate (2001) and the sealing seat (3001), and the guide groove (2004) is connected to the snap ring groove (3003).

4. The semiconductor power device with a hot melt assembly according to claim 1, characterized in that: Wires (6001) are welded to the tops of the N-type semiconductor (6003) and the P-type semiconductor (6004); one end of the two groups of wires (6001) away from the N-type semiconductor (6003) and the P-type semiconductor (6004) is welded and fixed to the pin assembly (4); the N-type semiconductor (6003) and the reflector (6006) are trumpet-shaped; the bottom of the reflector (6006) is filled with resin to form a transparent resin cover (6005); the transparent resin cover (6005) wraps the N-type semiconductor (6003), the P-type semiconductor (6004) and the substrate (6002).

5. The semiconductor power device with a hot melt assembly according to claim 1, characterized in that: The cross-sections of the first heat-conducting block (8001) and the second heat-conducting block (8002) are both semicircular, and the inner diameter of the first heat-conducting block (8001) is larger than the diameter of the second heat-conducting block (8002).

6. The semiconductor power device with a hot melt assembly according to claim 1, characterized in that: The top of the fixing seat (8003) is provided with a heat absorption groove (8004), the bottom of the heat absorption groove (8004) is provided with an arc groove, and the arc groove cooperates with the second heat conducting block (8002). The interior of the thermoplastic tube (8005) is filled with packaging wax (8006), and the top end of the second spring (8007) is fixedly connected to the top inner wall of the mounting groove. The second spring (8007) is fixed to the interior of the thermoplastic tube (8005) through the packaging wax (8006), and the second spring (8007) is in a compressed state inside the thermoplastic tube (8005).

7. The semiconductor power device with a hot melt assembly according to claim 3, characterized in that: A fixed cover (7004) is fixedly connected to the top outer wall of the sealing seat (3001), and a limiting groove (7005) is provided on the circumferential outer wall of the fixing cover (7004), and one end of the push rod (7003) passes through the inside of the limiting groove (7005).

8. The semiconductor power device with a hot melt assembly according to claim 7, characterized in that: The pin assembly (4) comprises an upper pin (4001) and a lower pin (4002), wherein the lower pin (4002) is fixedly connected to the sealing seat (3001), and the upper pin (4001) is fixedly connected to the transparent cover (1).

9. The semiconductor power device with a hot melt assembly according to claim 8, characterized in that: A contact groove (4006) is provided at the top of the lower pin (4002); the bottom end of the upper pin (4001) is rotatably connected to a rotating shaft (4003); the upper pin (4001) is rotatably connected to a metal sheet (4005) via the rotating shaft (4003); a first spring (4004) is fixedly connected to an outer wall of one side of the metal sheet (4005); an end of the first spring (4004) away from the metal sheet (4005) is fixedly connected to an outer wall of one side of the upper pin (4001); one side of the push column (7006) is in contact with the metal sheet (4005); and the metal sheet (4005) is located inside the contact groove (4006).

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