Semiconductor integrated circuit device, electrical apparatus, and vehicle

By introducing memory and controller into semiconductor integrated circuit devices and adjusting internal parameters according to external instructions, the problem of inappropriate parameters of existing power supply devices when product release is solved, and the maximum current consumption after updating processor functions is achieved. Response efficiently.

CN119315833APending Publication Date: 2025-01-14ROHM CO LTD
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Patent Information

Application Number
CN202410898845.0
Authority / Receiving Office
CN · China
Patent Type
Applications(China)
Current Assignee / Owner
Priority Date
2023-07-11
Filing Date
2024-07-05
Publication Date
2025-01-14

AI Technical Summary

Technical Problem

The existing power supply devices that supply power voltage to the processor are not in the best state when the product is released, and cannot effectively deal with the increase in maximum current consumption after the processor function is updated.

Method used

A semiconductor integrated circuit device is designed, including memory, receiver and controller, and one of a variety of settings is selected and enabled through external instructions, and internal parameters are adjusted to optimize power conversion efficiency, including switching frequency, phase compensation circuit constant, switch Component size and voltage-dividing ratio, etc.

Benefits of technology

By dynamically adjusting internal parameters, the power efficiency of the power device is improved, adapting to the maximum current consumption changes after the processor function is updated, and ensuring that the power device operates in the best state.

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Abstract

The invention provides a semiconductor integrated circuit device, an electrical apparatus, and a vehicle. A semiconductor integrated circuit device forms at least part of a power supply device configured to convert an input voltage into an output voltage. The semiconductor integrated circuit device includes: a memory configured to store a plurality of settings with respect to a plurality of types of internal parameters; a receiver configured to receive an instruction transmitted from outside the semiconductor integrated circuit device; and a controller configured to select and enable one of the plurality of settings based on the instruction.
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Description

Technical Field

[0001] The present invention relates to a semiconductor integrated circuit device, an electric appliance and a vehicle. Background Art

[0002] Conventionally, various power supply devices that supply a power supply voltage to a processor have been developed (for example, refer to Japanese Patent Application Laid-Open No. 2016-24561). Summary of the invention

[0003] The functionality of a processor is occasionally enhanced by updating the processor software. As the functionality of a processor is enhanced, the maximum current consumption of the processor may increase.

[0004] Typically, the internal parameters of such a power supply device that supplies the power supply voltage to the processor are designed to have sufficient margin at the time of product release to anticipate future software updates of the processor. In other words, it can be said that, typically, the internal parameters of the power supply device that supplies the power supply voltage to the processor are not in an optimal state at the time of product release.

[0005] The semiconductor integrated circuit device disclosed herein forms at least a part of a power supply device configured to convert an input voltage into an output voltage. The semiconductor integrated circuit device includes: a memory configured to store a plurality of settings regarding a plurality of types of internal parameters; a receiver configured to receive an instruction sent from outside the semiconductor integrated circuit device; and a controller configured to select one of the plurality of settings based on the instruction and enable the selected setting.

[0006] The electrical device disclosed herein includes: a power supply device; and a processor configured to execute software using an output voltage of the power supply device as a power supply voltage. The power supply device includes a semiconductor integrated circuit device having the above configuration. The processor is configured to enable software to be updated through communication.

[0007] The vehicle disclosed herein includes the electric device having the above-mentioned configuration. BRIEF DESCRIPTION OF THE DRAWINGS

[0008] Figure 1 is a schematic diagram illustrating a schematic configuration of an electric device according to the embodiment.

[0009] Figure 2 is a schematic diagram illustrating examples of a plurality of types of setting values ​​respectively corresponding to a plurality of set internal parameters.

[0010] Figure 3 is a diagram conceptually illustrating an example of a data table illustrating a relationship between settings and states of the settings.

[0011] Figure 4 is a diagram conceptually illustrating another example of a data table illustrating the relationship between settings and states of the settings.

[0012] Figure 5 is a diagram illustrating power efficiency characteristics in each setting.

[0013] Figure 6 is a diagram conceptually illustrating an example of a data table illustrating a relationship between a maximum load current range and each setting.

[0014] Figure 7 is an exterior view of the vehicle. DETAILED DESCRIPTION

[0015] <Electrical Equipment>

[0016] Figure 1 1 is a schematic diagram illustrating a schematic configuration of an electric device according to an embodiment. The electric device 1 includes a power supply device 2 and a processor 3.

[0017] The power supply device 2 includes a semiconductor integrated circuit device 20, an inductor L1, and an output capacitor C0. In the present embodiment, the power supply device 2 is a step-down switching power supply device configured to convert an input voltage VIN into an output voltage VOUT lower than the input voltage VIN, but may be a power supply device other than the step-down switching power supply device. As a power supply device other than the step-down switching power supply device, for example, a linear power supply device, a step-up switching power supply device, a step-down / step-up switching power supply device, etc. may be listed.

[0018] The semiconductor integrated circuit device 20 includes a controller 21 , a read only memory (ROM) 22 , a multi-time programmable (MTP) memory 23 , a wired communicator 24 , and an analog circuit 25 .

[0019] The analog circuit 25 includes a reference voltage source 250, an error amplifier 251, a ramp circuit 252, a pulse width modulation (PWM) comparator 253, a clock circuit 254, resistors R1, R2 and Rpc, a capacitor Cpc, drivers D1 to D2, a P-channel metal oxide semiconductor (PMOS) transistor Q1 and an N-channel metal oxide semiconductor (NMOS) transistor Q2.

[0020] The input voltage VIN is applied to the source of the PMOS transistor Q1. The source of the NMOS transistor Q2 is connected to the ground potential. Through the complementary switching operation of the PMOS transistor Q1 and the NMOS transistor Q2, a pulse switching voltage is generated at each drain of the PMOS transistor Q1 and the NMOS transistor Q2.

[0021] The drain of the PMOS transistor Q1 and the drain of the NMOS transistor Q2 are connected to a first end of the inductor L1. The second end of the inductor L1 is connected to a first end of the output capacitor C0. The second end of the output capacitor C0 is connected to the ground potential. The inductor L1 and the output capacitor C0 generate an output voltage VOUT obtained by smoothing the pulse switching voltage.

[0022] The resistors R1 and R2 divide the output voltage VOUT. The error amplifier 251 outputs an error signal according to the difference between the divided voltage of the output voltage VOUT and the reference voltage output from the reference voltage source 250. The capacitor Cpc and the resistor Rpc compensate the phase of the error amplifier 251.

[0023] The PWM comparator 253 compares the error signal output from the error amplifier 251 with the ramp voltage output from the ramp circuit 252, and outputs a set signal as a comparison result. The set signal output from the PWM comparator 253 is a PWM signal having a duty ratio according to the output voltage VOUT. The clock circuit 254 outputs a reset signal as a clock signal.

[0024] The controller 21 complementarily switches the PMOS transistor Q1 and the NMOS transistor Q2 based on the set signal and the reset signal. The driving signal for the PMOS transistor Q1 output from the controller 21 is power-amplified by the driver D1 and then supplied to the gate of the PMOS transistor Q1. The driving signal for the NMOS transistor Q2 output from the controller 21 is power-amplified by the driver D2 and then supplied to the gate of the NMOS transistor Q2.

[0025] The ROM 22 stores a plurality of types of setting values ​​respectively corresponding to a plurality of set internal parameters. Figure 2 2 is a schematic diagram illustrating examples of multiple types of setting values ​​corresponding to internal parameters of multiple settings, respectively. Figure 2 The setting value shown.

[0026] ROM 22 stores switching frequency A1, circuit constant A2 of phase compensation circuit, switching element size A3 and voltage divider ratio A4 as setting values ​​of internal parameters in setting A. Similarly, ROM 22 stores switching frequency B1, circuit constant B2 of phase compensation circuit, switching element size B3 and voltage divider ratio B4 as setting values ​​of internal parameters in setting B. Similarly, ROM 22 stores switching frequency C1, circuit constant C2 of phase compensation circuit, switching element size C3 and voltage divider ratio C4 as setting values ​​of internal parameters in setting C. Note that switching frequency, circuit constant of phase compensation circuit, switching element size and voltage divider ratio are merely examples of internal parameters. Internal parameters may include (one or more) setting values ​​in addition to switching frequency, circuit constant of phase compensation circuit, switching element size and voltage divider ratio. In addition to switching frequency, circuit constant of phase compensation circuit, switching element size and voltage divider ratio, internal parameters include, for example, an overcurrent detection threshold for overcurrent protection function, an overvoltage detection threshold for overvoltage protection function, etc.

[0027] The multi-time programmable memory 23 stores a plurality of settings regarding various types of internal parameters. In addition, the multi-time programmable memory 23 stores which of the plurality of settings is enabled. Figure 3 is a diagram conceptually illustrating an example of a data table illustrating the relationship between settings and states of the settings. Figure 3 , the number of settings is three, namely, setting A, setting B, and setting C, but the number is not limited to three and may be two or four or more.

[0028] When the multi-time programmable memory 23 stores Figure 3 When the data table is shown, setting A is enabled, and setting B and setting C are disabled. When setting A is enabled, the controller 21 controls the analog circuit 25 so that the analog circuit 25 is based on setting A.

[0029] Specifically, when the setting A is enabled, the controller 21 controls the frequency of the ramp voltage output from the ramp circuit 252 and the clock frequency of the clock circuit 254 so that the switching frequency is set to A1.

[0030] In addition, when setting A is enabled, the controller 21 controls the capacitor Cpc and the resistor Rpc so that the circuit constant of the phase compensation circuit configured with the capacitor Cpc and the resistor Rpc is set to A2. The capacitor Cpc has, for example, a configuration in which a plurality of series circuits of capacitors and switches are connected in parallel to each other. The electrostatic capacitance value of the capacitor Cpc is changed by controlling each switch by the controller 21. A configuration in which a plurality of series circuits of resistors and switches are connected in parallel to each other. The resistor Rpc has, for example, a configuration in which a plurality of series circuits of resistors and switches are connected in parallel to each other. The resistance value of the resistor Rpc is changed by controlling each switch by the controller 21.

[0031] In addition, when setting A is enabled, the controller 21 controls the PMOS transistor Q1 and the NMOS transistor Q2 so that each size of the PMOS transistor Q1 and the NMOS transistor Q2 as the switching element is set to A3. The PMOS transistor Q1 has a configuration in which, for example, a plurality of series circuits of a PMOS transistor and a switch are connected in parallel to each other. The size of the PMOS transistor Q1 is changed by controlling each switch by the controller 21. The NMOS transistor Q2 has a configuration in which, for example, a plurality of series circuits of an NMOS transistor and a switch are connected in parallel to each other. The size of the NMOS transistor Q2 is changed by controlling each switch by the controller 21.

[0032] In addition, when setting A is enabled, the controller 21 controls the resistor R1 so that the voltage division ratio of the resistors R1 and R2 is set to A4. The resistor R1 has a configuration in which, for example, a plurality of series circuits of resistors and switches are connected in parallel to each other. The resistance value of the resistor R1 is changed by controlling each switch by the controller 21.

[0033] The wired communicator 24 performs wired communication with the wired communicator 32 in the processor 3. The wired communication between the wired communicator 24 and the wired communicator 32 may be, for example, inter-integrated circuit (I2C) communication or serial peripheral interface (SPI) communication, or may be wired communication other than I2C communication or SPI communication.

[0034] The wired communicator 24 receives the instruction transmitted from the wired communicator 32 in the processor 3. The controller 21 selects one of the plurality of settings based on the instruction received by the wired communicator 24, and enables the selected setting.

[0035] For example, when storing in the multi-time programmable memory 23 Figure 3 When the instruction to enable setting B is sent from the wired communicator 32 in the processor 3 to the wired communicator 24, the controller 21 changes the contents stored in the multi-time programmable memory 23 from Figure 3 The contents of the data table shown are rewritten as Figure 4When the multi-time programmable memory 23 stores Figure 4 As shown in the data sheet, Setting B is enabled and Setting A and Setting C are disabled.

[0036] The processor 3 may be, for example, a system on chip (SoC), a microcontroller unit (MCU), etc. The processor 3 includes a wireless communicator 30, a multi-time programmable memory 31, and a wired communicator 32. The processor 3 executes software stored in the multi-time programmable memory 31 using the output voltage VOUT from the power supply device 2 as a power supply voltage.

[0037] In the processor 3, the software can be updated by the over-the-air (OTA) technology. In other words, in the processor 3, the software can be updated by the wireless communication with the software update information provider (e.g., server) performed by the wireless communicator 30. It should be noted that in the processor 3, instead of the wireless communication performed by the wireless communicator 30, or in addition to the wireless communication performed by the wireless communicator 30, the software can be updated by the wired communication with the software update information provider (e.g., a personal computer wired to the electrical device 1) performed by the wired communicator 32.

[0038] The processor 3 sends an instruction to the semiconductor integrated circuit device 20 in response to the update of the software. More specifically, the wired communicator 32 in the processor 3 sends an instruction to the wired communicator 24 in the semiconductor integrated circuit device 20 in response to the update of the software. Therefore, the semiconductor integrated circuit device 20 can change the setting at an appropriate timing.

[0039] It should be noted that for each update of the software, the processor 3 does not always need to send instructions to the semiconductor integrated circuit device 20. When the function of the processor 3 is enhanced by updating the software and thus the setting of the semiconductor integrated circuit device 20 needs to be changed, the processor 3 may send instructions to the semiconductor integrated circuit device 20 in response to the update of the software.

[0040] As described above, the semiconductor integrated circuit device 20 changes the settings regarding the various types of internal parameters based on instructions from outside the semiconductor integrated circuit device 20 (in the present embodiment, the processor 3). On the other hand, even by instructions from outside the semiconductor integrated circuit device 20 (in the present embodiment, the processor 3), the setting values ​​of the internal parameters cannot be changed freely and individually. In other words, for the outside of the semiconductor integrated circuit device 20 (in the present embodiment, the processor 3), the internal structure of the semiconductor integrated circuit device 20 is a black box, and there is no other way to select one of the multiple settings (in the present embodiment, setting A, setting B, and setting C) stored in the multi-time programmable memory 23 in the semiconductor integrated circuit device 20. Therefore, the semiconductor integrated circuit device 20 can appropriately change the settings regarding the various types of internal parameters.

[0041] The manufacturer of the semiconductor integrated circuit device 20 discloses the plurality of settings (setting A, setting B, and setting C in this embodiment) stored in the multi-time programmable memory 23 and the power efficiency characteristics of each setting to the manufacturer of the electric equipment 1 . Figure 5 is a diagram illustrating power efficiency characteristics in each setting. Figure 5 The horizontal axis in represents the load current of the power supply device 2 (the power consumption of the processor 3 ). Figure 5 The vertical axis in represents the power efficiency of the power supply device 2 . Figure 5 The power efficiency characteristic TA in the setting A, the power efficiency characteristic TB in the setting B, and the power efficiency characteristic TC in the setting C are depicted.

[0042] For example, when the product is released, the maximum load current of the electrical device 1 (the maximum current consumption of the processor 3) is Figure 5 When the current I0 is shown, the semiconductor integrated circuit device 20 at the time of product release of the electric device 1 is set to setting A. Then, in response to software update, based on an instruction from outside the semiconductor integrated circuit device 20, the setting of the semiconductor integrated circuit device 20 is changed from setting A to setting B or setting C.

[0043] In the above-described embodiment, the instruction from outside the semiconductor integrated circuit device 20 includes the content directly instructing to select any one of the setting A, the setting B, and the setting C as the setting of the semiconductor integrated circuit device 20 .

[0044] The instruction from outside the semiconductor integrated circuit device 20 may include information on the maximum load current of the power supply device 2 instead of including content directly instructing to select any one of the setting A, setting B, and setting C as the setting of the semiconductor integrated circuit device 20 .

[0045] When an instruction from outside the semiconductor integrated circuit device 20 includes a specification of such information on the maximum load current of the power supply device 2 is adopted into the electric equipment 1, the ROM 22 may be configured to store, for example Figure 6 Data sheet shown. Figure 6 2 is a diagram conceptually illustrating an example of a data table illustrating a relationship between the maximum load current range of the power supply device 2 and each setting. The controller 21 can be based only on instructions from outside the semiconductor integrated circuit device 20 and Figure 6 The data table shown is used to rewrite the contents stored in the multi-time programmable memory 23.

[0046] <Application Examples>

[0047] The electrical device 1 is installed in, for example, Figure 7 The vehicle 4 is shown. That is, the vehicle 4 includes an electric device 1. Examples of the electric device 1 mounted on the vehicle 4 include an infotainment electric device, an advanced driver assistance system (ADAS) electric device, an autonomous driving electric device, and the like.

[0048] It should be noted that the above-mentioned electric device 1 is not limited to such a vehicle-mounted electric device. The above-mentioned electric device 1 can also be installed in, for example, home electronic products and the like.

[0049] <Others>

[0050] In addition to the above-described embodiments, the configuration disclosed herein may be modified in various ways without departing from the gist of the present disclosure. The above-described embodiments are illustrative and not restrictive in all respects. The technical scope disclosed herein is defined by the appended claims rather than by the description of the above-described embodiments, and therefore all modifications falling within the boundaries and limits of the claims or the equivalents of these boundaries and limits are intended to be covered by the claims.

[0051] <Notes>

[0052] The following are supplementary notes to the present disclosure, and specific configuration examples thereof are described in the embodiments.

[0053] In a first configuration, a semiconductor integrated circuit device (20) disclosed herein forms at least a part of a power supply device (2) configured to convert an input voltage into an output voltage. The semiconductor integrated circuit device includes: a memory (23) configured to store a plurality of settings regarding a plurality of types of internal parameters; a receiver (24) configured to receive an instruction sent from outside the semiconductor integrated circuit device; and a controller (21) configured to select one of the plurality of settings based on the instruction and enable the selected setting.

[0054] The semiconductor integrated circuit device according to the above-mentioned first configuration changes the settings of various types of internal parameters based on instructions from outside the semiconductor integrated circuit device. On the other hand, even by instructions from outside the semiconductor integrated circuit device, the setting values ​​of the internal parameters cannot be changed freely and individually. In other words, for the outside of the semiconductor integrated circuit device, the internal structure of the semiconductor integrated circuit device is a black box, and there is no other way to select one of the multiple settings stored in the memory in the semiconductor integrated circuit device. Therefore, the semiconductor integrated circuit device 20 can appropriately change the settings of various types of internal parameters. Therefore, the semiconductor integrated circuit device according to the first configuration can solve the problem that the internal parameters of the general power supply device are not in the best state when the product is released.

[0055] The semiconductor integrated circuit device according to the first configuration described above may include a second configuration, wherein the memory is a multi-time programmable memory, and is configured to store which of the plurality of settings is enabled.

[0056] The semiconductor integrated circuit device including the above-mentioned first or second configuration may include a third configuration further including a read-only memory (22) configured to store setting values ​​of the plurality of types of internal parameters respectively corresponding to the plurality of settings.

[0057] The semiconductor integrated circuit device according to any one of the first to third configurations described above may include a fourth configuration, wherein the receiver is configured to receive the instruction through wired communication.

[0058] The semiconductor integrated circuit device according to any one of the first to fourth configurations described above may include a fifth configuration, wherein the instruction includes information on a maximum load current of the power supply device.

[0059] In a sixth configuration, the electrical device disclosed herein includes: a power supply device (2); and a processor (3), the processor being configured to execute software using an output voltage of the power supply device as a power supply voltage, wherein the power supply device includes a semiconductor integrated circuit device according to any one of the first to fifth configurations described above, and the processor being configured to enable the software to be updated through communication.

[0060] The electric device according to the sixth configuration described above may include a seventh configuration, wherein the updating of the software is performed through wireless communication.

[0061] The electric device according to the sixth or seventh configuration described above may include an eighth configuration, wherein the processor is configured to send the instruction to the semiconductor integrated circuit in response to the updating of the software.

[0062] In a ninth configuration, the vehicle (4) disclosed herein includes the electric device according to any one of the sixth to eighth configurations described above.

Claims

1. A semiconductor integrated circuit device, forming at least a part of a power supply device, the power supply device being configured to convert an input voltage into an output voltage, the semiconductor integrated circuit device comprising: a memory configured to store a plurality of settings regarding a plurality of types of internal parameters; a receiver configured to receive a command transmitted from outside the semiconductor integrated circuit device; as well as A controller is configured to select one of the plurality of settings based on the instruction and enable the selected setting.

2. The semiconductor integrated circuit device according to claim 1, The memory, being a multi-time programmable memory, is configured to store which of the plurality of settings is enabled.

3. The semiconductor integrated circuit device according to claim 1 or 2, further comprising: A read-only memory is configured to store setting values ​​of the plurality of types of internal parameters respectively corresponding to the plurality of settings.

4. The semiconductor integrated circuit device according to any one of claims 1 to 3, The receiver is configured to receive the instruction via wired communication.

5. The semiconductor integrated circuit device according to any one of claims 1 to 4, The instruction includes information about the maximum load current of the power supply device.

6. An electrical device comprising: Power supply unit; as well as a processor configured to execute software using the output voltage of the power supply device as a power supply voltage, wherein the power supply device comprises a semiconductor integrated circuit device according to any one of claims 1 to 5, The processor is configured to enable software to be updated through communications.

7. The electrical device according to claim 6, Wherein said updating of said software is performed via wireless communication.

8. The electrical device according to claim 6 or 7, The processor is configured to send the instruction to the semiconductor integrated circuit in response to the updating of the software.

9. A vehicle comprising: An electrical device according to any one of claims 6 to 8.

Citation Information

Patent Citations

  • Power management circuit, and electronic device using the same

    JP2016024561A