Silicon solar cell hole transport film material, preparation method and solar cell

Abstract

The invention belongs to the field of solar cells, and relates to a silicon solar cell hole transport film material, a preparation method and a solar cell. A fifth subgroup metal oxide gas source and a tetravalent metal gas source serve as precursors and are deposited on a heated substrate through a deposition method, a metal ion doped fifth subgroup metal oxide thin film is obtained, and the metal ion doped fifth subgroup metal oxide thin film serves as a hole selective transmission layer of a silicon solar cell; wherein the fifth subgroup metal oxide gas source comprises a tantalum source or / and a niobium source. By introducing tetravalent metal tin, zirconium and titanium ions, generation of tetravalent reduction-state tantalum or niobium ions is promoted, oxygen vacancies in fifth subgroup metal oxide tantalum oxide and niobium oxide films can be effectively increased, the work function of the films is remarkably improved, the unique hole transport characteristic is shown, and the hole transport efficiency is improved. The thin film can be used as a selective transmission layer of a silicon heterojunction solar cell as a metal oxide thin film.

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