Method and apparatus for manufacturing semiconductor laser device

Abstract

The method includes the steps of: preparing a semiconductor substrate including a first substrate and a plurality of strip-shaped semiconductor parts crystal-grown on the first substrate; dividing a plurality of structures, each of which includes a plurality of semiconductor parts, on the first substrate so that end surfaces parallel to the short-side direction appear in each of the structures, thereby obtaining individual groups; transferring a plurality of individuals included in the individual group to a second substrate; and dividing the second substrate to obtain a plurality of element substrates each including one or more elements.

Description

Technical Field

[0001] The present disclosure relates to a method for manufacturing a semiconductor laser device, etc. Background Art

[0002] Patent Document 1 discloses a method of bonding an element structure wafer having a laser element structure formed on a growth substrate to a support substrate, and singulating the bonded wafer to obtain a laser element with a support substrate having a light emitting end face and a light reflecting end face.

[0003] Prior Art Literature

[0004] Patent Literature

[0005] Patent document 1: JP Patent Publication No. 2019-46868 Summary of the invention

[0006] The manufacturing method of the semiconductor laser device involved in the present disclosure includes the following steps: preparing a semiconductor substrate having a first substrate and a plurality of strip-shaped semiconductor parts crystallized and grown on the first substrate; dividing a plurality of structures respectively including the plurality of semiconductor parts on the first substrate into end faces parallel to the short side direction appearing in each structure, thereby obtaining an individual group; transferring a plurality of individuals contained in the individual group to a second substrate; and dividing the second substrate to obtain a plurality of element substrates each including one or more individuals. BRIEF DESCRIPTION OF THE DRAWINGS

[0007] Figure 1 It is a perspective view showing a method for manufacturing a semiconductor laser device according to an embodiment.

[0008] Figure 2 This is a flowchart showing a method for manufacturing a semiconductor laser device according to an embodiment.

[0009] Figure 3 It is a block diagram showing a semiconductor device manufacturing apparatus according to an embodiment.

[0010] Figure 4 This is a flowchart showing a method for manufacturing a semiconductor laser device according to an embodiment.

[0011] Figure 5 It is a plan view showing a method for manufacturing a semiconductor laser device according to an embodiment.

[0012] Figure 6 It is a cross-sectional view showing a method for manufacturing a semiconductor laser device according to an embodiment.

[0013] Figure 7 It is a perspective view showing the individual arrangement on the second substrate involved in the embodiment.

[0014] Fig. 8A It is a cross-sectional view perpendicular to the cavity length direction, showing a structural example of a unit (laser body) according to the embodiment.

[0015] Figure 8B It is a cross-sectional view parallel to the cavity length direction, showing a structural example of a unit (laser body) according to the embodiment.

[0016] Fig. 9 It is a perspective view showing the structure of an element substrate and a laser element according to the embodiment.

[0017] Fig.10 It is a plan view showing a method for manufacturing a semiconductor laser device according to an embodiment.

[0018] Fig.11 It is a plan view showing a method for manufacturing a semiconductor laser device according to an embodiment.

[0019] Fig.12 It is a plan view showing a method for manufacturing a semiconductor laser device according to an embodiment.

[0020] Fig.13 It is a cross-sectional view showing a structural example of a base substrate included in the first substrate.

[0021] Fig.14 It is a cross-sectional view showing a method for manufacturing a semiconductor substrate according to an embodiment.

[0022] Fig.15 It is a plan view showing a method for manufacturing a semiconductor laser device according to an embodiment.

[0023] Fig.16 It is a cross-sectional view showing a method for manufacturing a semiconductor laser device according to an embodiment.

[0024] Fig.17 It is a cross-sectional view showing a method for manufacturing a semiconductor laser device according to an embodiment.

[0025] Fig.18 It is a cross-sectional view showing a method for manufacturing a semiconductor laser device according to an embodiment.

[0026] Fig.19 It is a cross-sectional view showing a method for manufacturing a semiconductor laser device according to an embodiment.

[0027] Fig. 20 It is a perspective view showing a method for manufacturing a semiconductor laser device according to an embodiment.

[0028] Fig.21It is a cross-sectional view showing a method for manufacturing a semiconductor laser device according to an embodiment.

[0029] Fig. 22 It is a cross-sectional view showing a method for manufacturing a semiconductor laser device according to an embodiment.

[0030] Fig.23 It is a perspective view showing a method for manufacturing a semiconductor laser device according to an embodiment.

[0031] Fig.24 It is a cross-sectional view showing a method for manufacturing a semiconductor laser device according to an embodiment. DETAILED DESCRIPTION

[0032] (Method for manufacturing semiconductor laser device)

[0033] Figure 1 It is a perspective view showing a method for manufacturing a semiconductor laser device according to an embodiment. Figure 2 This is a flowchart showing a method for manufacturing a semiconductor laser device according to an embodiment.

[0034] Figure 1 as well as Figure 2 The recorded method for manufacturing a semiconductor laser device includes: a step (S10) of preparing a semiconductor substrate 10 having a first substrate FK and a plurality of strip-shaped semiconductor portions 8 crystal-grown on the first substrate FK; a step (S20) of dividing a plurality of structures JT each including a plurality of semiconductor portions 8 on the first substrate FK into end faces CF parallel to the short side direction (X direction) formed in each structure JT to obtain an individual group LA; a step (S30) of transferring a plurality of individuals LT contained in the individual group LA to a second substrate SK; and a step (S40) of dividing the second substrate SK to obtain a plurality of element substrates 30 each including one or more individuals LT.

[0035] The so-called individual group LA refers to, for example, more than 4 individuals. After the semiconductor substrate 10 is divided into a plurality of single-piece substrates 10D, the plurality of individuals LT of the single-piece substrate 10D may be transferred to the second substrate SK. In the semiconductor substrate 10, the direction from the first substrate FK to the semiconductor portion 8 is set to "upward". Sometimes, the situation of viewing an object with a line of sight parallel to the normal direction of the semiconductor substrate 10 (including perspective) is called "top view". The so-called semiconductor substrate refers to a substrate including a semiconductor portion, and the first substrate FK (sometimes referred to as a template substrate) may also include a non-semiconductor (such as an insulator).

[0036] In the method for manufacturing a semiconductor laser device according to the present embodiment, a plurality of individuals LT are transferred to the second substrate SK from the individual group LA obtained by dividing the plurality of structures JT, and then the second substrate SK is divided, so that the manufacturing yield of the semiconductor laser device (for example, the element substrate 30) can be improved. Since the plurality of structures JT in the stripe shape along the crystal orientation of the semiconductor portion 8 are divided on the first substrate FK without being transferred, the end face CF of the plurality of structures JT can be formed into a desired shape and at a desired position.

[0037] The semiconductor portion 8 may be a semiconductor layer containing a nitride semiconductor (e.g., a nitride semiconductor crystal). The nitride semiconductor may be characterized, for example, as AlxGayInzN (0≤x≤1; 0≤y≤1; 0≤z≤1; x+y+z=1). Specific examples include GaN-based semiconductors, AlN (aluminum nitride), InAlN (indium aluminum nitride), and InN (indium nitride). The so-called GaN-based semiconductor is a semiconductor containing gallium atoms (Ga) and nitrogen atoms (N). Typical examples include GaN, AlGaN, AlGaInN, and InGaN. The semiconductor portion 8 may be a doped type (e.g., an n-type containing a donor) or an undoped type.

[0038] The division of the plurality of strip-shaped structures JT may be performed by cleavage or by etching (dry or wet etching). The end faces CF formed by the division of the structures JT include the cavity end faces of the individual LT (laser bodies).

[0039] In step S30, selective transfer can be performed such that the number of transferred individuals per unit area to the second substrate SK is less than the number of individuals per unit area in the individual group LA. For example, the interval in the Y direction of the plurality of individuals LT can be greater than the size (resonator length) in the Y direction of each individual LT (laser body). In step S40, the second substrate SK can be divided so that no individual LT is divided. In this way, the contamination of the end face of the individual LT (resonator end face of the laser body) associated with the division of the second substrate SK can be reduced.

[0040] (Semiconductor laser device manufacturing apparatus)

[0041] Figure 3 It is a block diagram showing a semiconductor device manufacturing apparatus according to an embodiment. Figure 3 The semiconductor device manufacturing device 50 includes: a device A10 for performing the process S10; a device A20 for performing the process S20; a device A30 for performing the process S30; a device A40 for performing the process S40; and a device A50 for controlling the devices A10, A20, A30 and A40.

[0042] (Example)

[0043] Figure 4 This is a flowchart showing a method for manufacturing a semiconductor laser device according to an embodiment. Figure 5 It is a plan view showing a method for manufacturing a semiconductor laser device according to an embodiment. Figure 6 It is a cross-sectional view showing a method for manufacturing a semiconductor laser device according to an embodiment. Figure 7 It is a perspective view showing the individual arrangement on the second substrate involved in the embodiment. Fig. 8A It is a cross-sectional view perpendicular to the cavity length direction, showing a structural example of a unit (laser body) according to the embodiment. Figure 8B It is a cross-sectional view parallel to the cavity length direction, showing a structural example of a unit (laser body) according to the embodiment. Fig. 9 It is a perspective view showing the structure of an element substrate and a laser element according to the embodiment.

[0044] Figures 4 to 6 The described method for manufacturing a semiconductor laser device includes the following steps: preparing a semiconductor substrate 10, wherein the semiconductor substrate 10 includes a first substrate FK including a mask pattern 6 including a mask portion 5 and an opening portion K, and a plurality of semiconductor portions 8 in the form of strips crystallized and grown on the first substrate FK; dividing a plurality of structures JT each including a plurality of semiconductor portions 8 on the first substrate FK into end faces CF parallel to the short side direction (X direction) formed on each structure JT, thereby obtaining an individual group LA; removing the mask pattern 6; transferring a plurality of individuals LT contained in the individual group LA to a second substrate SK, thereby obtaining an element substrate 20 (semiconductor device) in which a plurality of individuals LT are arranged in a matrix; dividing the second substrate SK to obtain a plurality of element substrates 30 (semiconductor devices) each including two or more individuals LT arranged in a row; forming a dielectric film (reflector film) RF on the end faces CF of each individual LT on the element substrate 30; and dividing the element substrate 30 to obtain a plurality of laser elements 40 (semiconductor devices) each including one or more individuals. Here, the mask pattern 6 is removed before transfer, but the transfer may be performed without removing the mask pattern 6 .

[0045] The first substrate FK (template substrate) may include a base substrate BS, and a mask pattern 6 may be formed on the base substrate BS. The semiconductor portion 8 may be formed using an ELO (Epitaxial Lateral Overgrowth) method starting from a region (seed region of the first substrate FK) where the base substrate BS is exposed through the opening K. The ELO method may employ vapor phase growth such as organic metal vapor phase growth, hydride vapor phase growth, and molecular beam vapor phase growth.

[0046] The mask portion 5 may be a selective growth mask (growth suppression region of the first substrate FK) for causing the semiconductor portion 8 to grow laterally. The thickness direction of the semiconductor portion 8 may be the c-axis direction ( <0001> The opening K may be oriented in the long-side direction, and its width direction may be, for example, the a-axis direction (<11-20> direction) of the semiconductor portion 8 which is a nitride semiconductor crystal, and its long-side direction may be the m-axis direction. In the mask pattern 6, a plurality of openings K may be arranged side by side in the a-axis direction (X direction) of the semiconductor portion 8.

[0047] In the ELO method of this embodiment, a plurality of stripe-shaped semiconductor portions 8 can be formed by stopping the growth of crystals growing in opposite directions (a-axis direction) on the mask portion 5 before they meet. The mask portion 5 is provided below the gap G between adjacent semiconductor portions 8 .

[0048] like Figure 5 as well as Figure 6 As shown, the structure JT may include a semiconductor portion 8 and an upper portion 9 located on the semiconductor portion 8. The upper portion 9 may include a functional semiconductor layer 9S, an insulating film 9Z, and electrodes 9A and 9C, wherein the functional semiconductor layer 9S includes a nitride semiconductor. Since there is a mask portion 5 under the gap G between adjacent semiconductor portions 8, the functional semiconductor layer 9S (for example, a nitride semiconductor crystal) selectively grows on the semiconductor portion 8 and is hardly formed (filmed) on the mask portion 5 facing the gap G and on the side surface of the semiconductor portion 8 in the X direction. Therefore, the plurality of structures JT become stripe shapes along the crystal orientation (for example, the m-axis orientation) of the semiconductor portion 8. The functional semiconductor layer 9S may include a ridge RJ (a convex current narrowing portion). In the semiconductor portion 8 formed by the ELO method, since the portion on the mask portion 5 becomes a low defect (described later), the ridge RJ may be set to a long side shape with the m-axis direction as the long side direction so that it overlaps with the mask portion 5 when viewed from above.

[0049] In the embodiment, the plurality of structures JT may be divided by cleavage. The semiconductor portion 8 includes a nitride semiconductor, and the end face CF as a cleavage face may be parallel to the m-plane of the nitride semiconductor (crystal).

[0050] Each structure JT may be scribed to start cleavage. The semiconductor portion 8 includes a GaN-based semiconductor, and the first substrate FK may include a wafer (e.g., a silicon substrate) containing a material having a smaller thermal expansion coefficient than the GaN-based semiconductor. In this case, since the internal stress of the semiconductor substrate 10 is released by scribing the semiconductor crystals of each structure JT, cleavage can proceed naturally. By scribing the side surface of the structure JT close to the ridge RJ, the flatness of the resonator end face (cross section of the ridge RJ) included in the end face CF can be improved.

[0051] The first substrate FK and the second substrate SK may each include a silicon substrate, and the first substrate FK and the second substrate SK may each include a silicon carbide substrate. If the materials of the two substrates are the same, the bonding accuracy can be improved.

[0052] Therefore, the process of transferring the plurality of individual LT to the second substrate SK by bonding the plurality of individual LT on the first substrate FK to the heated second substrate SK becomes easy. When the plurality of individual LT is transferred to the second substrate SK, the connection crystal portion 8U between the individual LT and the first substrate FK can be broken naturally. Of course, the connection crystal portion 8U can also be broken by external force before the plurality of individual LT is transferred to the second substrate SK.

[0053] It is also possible to transfer the plurality of units LT to the second substrate SK and electrically connect each unit LT to the electrode pads (P1, P2) of the second substrate SK. For example, the electrodes of each unit LT can be electrically connected to each other via solder H (see Fig. 9 ) are connected to electrode pads (P1, P2).

[0054] like Figure 5 As shown, for the transfer of multiple individuals LT, a thinning-type selective transfer can be performed in which the number of individuals NS transferred per unit area to the second substrate SK is less than the number of individuals NA per unit area in the individual group LA. NS / NA can be set to 1 / 4, 1 / 8, 1 / 12, etc. The thinning-out number in the first direction (X direction) can also be made greater than the thinning-out number in the second direction (Y direction). The direction corresponding to the short side direction of the multiple semiconductor parts LT in the second substrate SK is set as the first direction (X direction), and the direction corresponding to the long side direction is set as the second direction (Y direction), and the multiple individuals LT transferred to the second substrate SK can be arranged in a matrix in the X direction and the Y direction. The interval d1 in the Y direction of the multiple individuals LT can be greater than the size (resonator length) of each individual LT (laser body) in the Y direction. The interval d1 in the Y direction of the multiple individuals LT can be a natural number multiple of the size (resonator length) of each individual LT in the Y direction. In this case, the separation of the second substrate SK becomes easy. For example, even without using techniques such as stealth dicing, it is possible to reduce end-face contamination of individual LTs.

[0055] In this embodiment, since the distance d2 between the end face CF and the cut surface CL can be ensured even when the resonator length L (dimension in the Y direction) of the individual LT is a short resonator length of 200 μm or less, there is an advantage that the end face is difficult to be contaminated. The distance d2 between the end face CF and the (substrate) cut surface CL can be set to be more than 1 / 2 of the resonator length L. In addition, the second substrate SK can be divided by stealth dicing to obtain a plurality of element substrates 30. In this way, the end face contamination of the individual LT can be further reduced.

[0056] like Figure 5 as well as Figure 7 As shown in FIG. 1 , the second substrate SK may have a plurality of recesses UB arranged in a matrix in the first direction (X direction) and the second direction (Y direction). Figure 5 as well as Fig. 9 As shown in FIG. 1 , the end face CF parallel to the short side direction (X direction) of each of the plurality of bodies LT transferred to the second substrate SK may be located above one of the plurality of recesses UB of the second substrate KS. In this case, there are advantages such as easy formation of the dielectric film on the end face CF and difficulty for the laser from the body LT to find the second substrate SK.

[0057] The cross section (substrate cross section) formed by cutting the second substrate SK may include at least one of the plurality of recesses UB. Since the recess UB has a small thickness, the substrate can be easily cut.

[0058] like Figure 5 as well as Fig. 9 As shown, in each of the plurality of element substrates 30, two or more individuals LT can be arranged in a row in the first direction (X direction). By arranging the plurality of individuals LT in a row, it becomes easy to form a dielectric film RF toward the end face CF. In addition, since the end faces of the plurality of individuals LT are arranged side by side in a row, the element substrate 30 itself can function as a semiconductor laser device. The dielectric film RF can be a light reflector containing at least one of Al2O3, AlN, MgF2, MgO, Nb2O5, SiO2, Si3N4, TiO2, Ta2O5, Y2O3, ZnO, and ZrO2.

[0059] like Fig. 8A As shown, the laser body LT comprises: a semiconductor portion 8; a functional semiconductor layer 9S (n-type semiconductor layer 9N, active layer 9K, p-type semiconductor layer 9P) located above the semiconductor portion 8; an electrode 9A (anode) connected to the p-type semiconductor layer 9P of the ridge RJ; an electrode 9C (cathode) connected to the n-type semiconductor layer 9N; and an insulating film 9Z located on the side of the ridge RJ.

[0060] A photoconductive layer located on the inner side (active layer 9K side) and a cladding layer located on the outer side may be provided respectively in the n-type semiconductor layer 9N and the p-type semiconductor layer 9P sandwiching the active layer 9K. The active layer 9K may be provided with a quantum well structure, for example, and light is generated by re-coupling holes supplied from the electrode 9A and electrons supplied from the electrode 9C in the active layer 9K.

[0061] like Fig. 8A , Figure 8BAs shown, the light generated in the active layer 9K is confined by two cladding layers (n-type and p-type) with a small refractive index, and is amplified by inductive emission during the process of reciprocating between the end face (resonator end face) RE of the resonator RK, and is emitted from one of the resonator end faces RE as laser light. The end face CF of the individual LT (laser body) may include the resonator end face RE, and the resonator end face RE may be covered with a dielectric film RF as a reflector film.

[0062] The semiconductor portion 8 may include: a first region A1 that overlaps with the ridge RJ in a plan view; and a second region A2 that does not overlap with the ridge RJ in a plan view and has a threading dislocation density greater than that of the first region A1. Fig. 8A As shown in FIG. 1 , the lower surface (back side) of the semiconductor portion 8 may include a region 8C (a rough surface region where the surface is rougher than the surrounding surface) where the surface roughness is locally increased. The region 8C may have at least one of a protrusion and a depression. For example, a plurality of protrusions of random shapes and a plurality of depressions of random shapes may be formed. The region 8C may be formed on the lower surface of the second region A2. The region 8C may be formed so as not to overlap with the ridge RJ when viewed from above. The heat dissipation may be improved by the region 8C. A protective film of the same material as the dielectric film RF may be formed on at least a portion of the region 8C.

[0063] Fig.10 9 is a top view showing a method for manufacturing a semiconductor laser device according to an embodiment. Each structure JT includes a ridge RJ, electrodes 9A, 9C, and an insulating film 9Z. Since the portion on the mask portion 5 becomes a low defect in the semiconductor portion 8 formed by the ELO method, the ridge RJ is set to a long side shape with the m-axis direction as the long side direction so that it overlaps with the mask portion 5 when viewed from above. The ridge RJ as a part of the functional semiconductor layer 9S can be included in the end face CF, and the cross section of the ridge RJ (parallel to the a-axis) functions as a resonator end face. That is, the structure JT can be cut orthogonally to the extension direction of the ridge RJ.

[0064] Fig.11 FIG. 1 is a top view showing a method for manufacturing a semiconductor laser device according to an embodiment. Figure 5 In the embodiment, the structure JT is divided by cleavage, but the present invention is not limited to this. Fig.11 As shown, the structure JT can be divided by etching, and the end faces (including the resonator end faces) of the individual LT can be made into etched mirrors. In this case, dry etching such as inductively coupled plasma reactive ion etching, wet etching using solutions such as KOH, etc. can be used. In the embodiment, since the multiple structures JT are formed along the crystal orientation (m-axis orientation, Y direction), high-quality etched mirrors can be obtained.

[0065] Fig.12FIG. 1 is a top view showing a method for manufacturing a semiconductor laser device according to an embodiment. Figure 5 In the present invention, in the element substrate where two or more individual LTs are arranged in a row, the end surface coating (dielectric film formation) of the individual LTs is performed, but the present invention is not limited to this. Fig.12 As shown, the dielectric film RF can also be formed on the end faces CF of the plurality of individual LT arranged in a matrix on the second substrate SK. By performing selective transfer to the second substrate SK, the end face interval becomes wider than before the transfer, so the dielectric film RF can be formed even when the plurality of individual LT is arranged in a matrix.

[0066] Fig.13 It is a cross-sectional view showing a structural example of a base substrate contained in the first substrate. The base substrate BS may have a main substrate 1 as a heterogeneous substrate having a lattice constant different from that of the semiconductor portion 8. The semiconductor portion 8 may also include a GaN-based semiconductor, and the main substrate 1 as a heterogeneous substrate may be a silicon substrate. As heterogeneous substrates, in addition to silicon substrates, sapphire (Al2O3) substrates, silicon carbide (SiC) substrates, etc. may also be cited. The surface orientation of the main substrate 1 is, for example, the (111) surface of a silicon substrate, the (0001) surface of a sapphire substrate, and the 6H-SiC (0001) surface of a SiC substrate. These are examples, and any substrate and surface orientation may be used as long as the semiconductor portion 8 can be grown by the ELO method.

[0067] The base substrate BS includes a main substrate 1 and a base portion 4 on the main substrate 1, and the semiconductor portion 8 can be grown from the upper surface (seed crystal region) of the base portion 4 exposed in the opening portion K. The base portion 4 can include a nitride semiconductor. The base portion 4 can include at least one of a buffer portion and a seed crystal portion. That is, the base portion 4 can be composed of a seed crystal portion, and the base portion 4 can also be composed of a buffer portion (main substrate side) and a seed crystal portion (semiconductor portion side). As a buffer portion, GaN-based semiconductors, AlN, SiC, etc. can be used. As a seed crystal portion, a nitride semiconductor (for example, a GaN-based semiconductor) can be used. The base substrate BS is composed of a self-supporting single crystal substrate (for example, a wafer cut from a bulk crystal) of GaN, SiC, etc., and a mask pattern 6 can be configured on the single crystal substrate.

[0068] Fig.14 is a cross-sectional view showing a method for manufacturing a semiconductor substrate according to an embodiment. Fig.14In the embodiment, a mask pattern 6 including a plurality of mask portions 5 in strip shape is provided on a base substrate BS. The mask portion 5 is composed of, for example, a laminated insulating film (SiOx / SiNx) having a width of 52 μm, and the m-axis direction of the semiconductor portion 8 is set as the long side direction. The strip spacing of the mask portion 5 is set to 55 μm. On the mask pattern 6, for example, the semiconductor portion 8 (nitride semiconductor portion) is grown by organic metal vapor deposition (MOCVD) using trimethylgallium (TMG) and ammonia (NH3) (ELO method).

[0069] The initial growth portion 8p becomes the starting point of the lateral growth of the semiconductor portion 8. The initial growth portion 8p is formed to a thickness of, for example, 30nm to 1000nm, 50nm to 400nm, or 70nm to 350nm. By causing the initial growth portion 8p to grow laterally from a state in which it slightly protrudes from the mask portion 5, the growth of the semiconductor portion 8 in the c-axis direction (thickness direction) can be suppressed, and the semiconductor portion 8 can be grown laterally at high speed and with high crystallinity, and the consumption of raw materials can be reduced. As a result, the low-defect semiconductor portion 8 (a crystal of a nitride semiconductor such as GaN) can be made thin and large, and can be formed at low cost.

[0070] The semiconductor portions 8 that grow laterally from two adjacent openings K in opposite directions do not contact (join) each other on the mask portion 5, and a gap (gap) G is provided, so that the internal stress of the semiconductor portion 8 can be reduced. As a result, cracks and defects (dislocations) generated in the semiconductor portion 8 can be reduced. This effect is particularly effective when the main substrate 1 is a heterogeneous substrate. The width of the gap G can be set to, for example, 10 μm or less, 5 μm or less, 3 μm or less, or 2 μm or less.

[0071] The portion of the semiconductor portion 8 located on the initial growth portion 8p becomes a dislocation inheritance portion with a large number of threading dislocations, and the portion on the mask portion 5 (wing portion) becomes a low defect portion YS (first region A1 in FIG8 ) having a threading dislocation density of 1 / 10 or less compared to the dislocation inheritance portion. The threading dislocation is a dislocation in the semiconductor portion 8 in the direction of its c-axis ( <0001> The threading dislocation density of the low defect portion YS can be set to, for example, 5×10 6 〔pcs / cm 2 As described above, when the active layer 9K including the light emitting portion is formed above the semiconductor portion 8, the light emitting portion can be arranged above the low defect portion YS (overlapping with the low defect portion YS in a plan view).

[0072] Regarding the low defect portion YS, the ratio of the dimension W1 in the a-axis direction to the thickness d1 (W1 / d1) can be set to, for example, 2.0 or more. If the method of the embodiment is used, W1 / d1 can be set to 1.5 or more, 2.0 or more, 4.0 or more, 5.0 or more, 7.0 or more, or 10.0 or more. By setting W1 / d1 to 1.5 or more, it is easy to perform the semiconductor portion 8 segmentation process (for example, the segmentation process in which the cross section becomes the m-plane) in the subsequent process. In addition, the internal stress of the semiconductor portion 8 is reduced, and the warping of the semiconductor substrate 10 is reduced.

[0073] The aspect ratio (ratio of the dimension in the X direction to the thickness = WL / d1) of the semiconductor portion 8 can be set to 3.5 or more, 5.0 or more, 6.0 or more, 8.0 or more, 10 or more, 15 or more, 20 or more, 30 or more, or 50 or more. In addition, if the method of the embodiment is used, the ratio (WL / WK) of the dimension WL in the X direction of the semiconductor portion 8 to the width WK of the opening K can be set to 3.5 or more, 5.0 or more, 6.0 or more, 8.0 or more, 10 or more, 15 or more, 20 or more, 30 or more, or 50 or more, and the ratio of the low defect portion can be increased. Fig.14 The semiconductor portion 8 (including the initial growth portion 8p) shown can be a nitride semiconductor crystal (for example, a GaN crystal, an AlGaN crystal, an InGaN crystal, or an InAlGaN crystal).

[0074] (Other embodiments)

[0075] In the above-mentioned embodiment, a semiconductor laser device including an individual LT having a single-sided two-electrode structure in which electrodes 9A and 9C are provided on the same side relative to the semiconductor portion 8 is described. However, in other embodiments, the individual LT may also have a structure having an electrode 9C on the side opposite to the side provided with the electrode 9A (a double-sided electrode structure). For example, after the individual LT is transferred to the second substrate SK, the electrode 9C electrically connected to the semiconductor portion 8 may be formed on the surface of the individual LT on the side opposite to the side provided with the electrode 9A.

[0076] The dislocation inheritance portion can be removed by etching, etc. In this case, the structure JT can be formed using the low defect portion YS. By increasing the width of the low defect portion YS (i.e., increasing the dimension WL), an individual LT with a single-sided two-electrode structure can be formed from the structure JT formed using the low defect portion YS.

[0077] Fig.15 FIG. 1 is a top view showing a method for manufacturing a semiconductor laser device according to an embodiment of the present invention. Fig.15As shown in FIG. 1 , the crystals grown in opposite directions (a-axis direction) on the mask portion 5 may be joined to form a planar semiconductor layer PS, and the joined portion (high defect region in the long side direction) of the planar semiconductor layer PS may be removed to form a plurality of strip-shaped semiconductor portions 8. In the method for manufacturing a semiconductor laser device in one embodiment of the present disclosure, a semiconductor substrate 10 having a first substrate FK and a plurality of strip-shaped semiconductor portions 8 crystal-grown on the first substrate FK may be prepared, and the specific method is not particularly limited.

[0078] Alternatively, the end faces CF may be formed by cleaving after the structure JT is divided by etching or the like. The semiconductor substrate 10 may be divided into a plurality of individual substrates 10D so that cross sections are formed at the portions of the grooves formed by etching or the like.

[0079] In the known technology of Patent Document 1, it is necessary to cleave the element structure wafer and the support substrate together after the easy-cleavage surfaces of the element structure wafer and the support substrate are accurately aligned. In addition, the support substrate is required to have an easy-cleavage surface. Furthermore, it is also necessary to remove the support substrate after the light emitting end face is formed and the wafer is singulated.

[0080] On the other hand, according to the aforementioned embodiment, since the laser end face (resonator end face) is formed on the first substrate FK (growth substrate), there is no need for a precise alignment process as in the known technology, and it is difficult to produce the problem of poor cleavage. In addition, since the second substrate SK is transferred after the laser end face is formed, the second substrate SK does not need to have an easy-to-cleave surface, and precise alignment (for the formation of the laser end face) is not required during transfer. Furthermore, since the removal of the first substrate FK is in the form of transfer to the second substrate SK (heat sink substrate), it is carried out in the wafer state before singulation, so the manufacturing process is simple and suitable for mass production. In this way, according to the aforementioned embodiment, the manufacturing yield of semiconductor laser devices is improved.

[0081] Figure 16 to Figure 18 1 is a cross-sectional view showing a method for manufacturing a semiconductor laser device according to an embodiment. Fig.16 In the embodiment, the first body LT as one of the multiple bodies to be transferred includes an anode 9A, and the second substrate SK has a first protrusion T1 corresponding to the first body LT. During the transfer, at least a portion of the first protrusion T1 ( Fig.16 The second substrate SK has a second protrusion T2 corresponding to the first body LT. During transfer, the second protrusion T2 is located outside the anode 9A (away from the center of the first body LT). The anode 9A can be bonded to the electrode pad P1 of the second substrate SK via solder H. Fig.16In the embodiment, at least one of the first protrusion T1 and the second protrusion T2 functions as a shielding wall for the solder H.

[0082] exist Fig.17 In the embodiment, the first body LT as one of the multiple bodies to be transferred includes an anode 9A, and the second substrate SK has a first groove G1 corresponding to the first body LT. During the transfer, at least a portion of the first groove G1 ( Fig.17 The second substrate SK has a second groove G2 corresponding to the first body LT. During transfer, the second groove G2 is located outside the anode 9A (away from the center of the first body LT). The anode 9A can be bonded to the electrode pad P1 of the second substrate SK via solder H. Fig.17 In the embodiment, at least one of the first groove G1 and the second groove G2 can function as a capture groove for the solder H. At least one of the first groove G1 and the second groove G2 can have a side wall containing metal. At least one of the first groove G1 and the second groove G2 can be tapered (e.g., a shape that becomes thinner toward the bottom). In a top view, the second groove G2 and the anode 9A can be parallel in the Y direction.

[0083] Fig.18 The second substrate SK has a first groove G1 (at least a portion of which is located further inside than the anode 9A during transfer) and a second protrusion T2 (at least a portion of which is located further outside than the anode 9A during transfer). The first groove G1 may have a side wall MF containing metal. The first groove G1 may be in a forward tapered shape (a shape that becomes thinner toward the bottom).

[0084] Fig.19 1 is a cross-sectional view showing a method for manufacturing a semiconductor laser device according to an embodiment. Fig.17 In the embodiment, the second groove portion G2 extending in the Y direction (parallel to the length direction of the resonator) is formed outside in the X direction, but it may also be formed as follows. Fig.19 In this way, the second groove portion G2 extending in the X direction (perpendicular to the resonator longitudinal direction) is formed on the outer side in the Y direction.

[0085] Fig. 20 It is a perspective view showing a method for manufacturing a semiconductor laser device according to an embodiment. Fig.21 1 is a cross-sectional view showing a method for manufacturing a semiconductor laser device according to an embodiment. Fig. 20 as well as Fig.21As shown in FIG. 1 , the inner wall MF located under the first body LT among the plurality of inner walls formed by the recess UB (second groove G2) may include metal. The anode 9A may be bonded to the electrode pad P1 of the second substrate SK via the solder H. In addition, the inner wall MF may be a tapered surface. Fig. 20 as well as Fig.21 The shape can reduce the undesirable situation that the solder H flows out to unexpected areas during transfer.

[0086] Fig. 22 It is a cross-sectional view showing a method for manufacturing a semiconductor laser device according to an embodiment. Fig.23 1 is a perspective view showing a method for manufacturing a semiconductor laser device according to an embodiment. Fig. 22 as well as Fig.23 In the embodiment, the second substrate SK has a hill Q corresponding to the first individual LT, which is one of the multiple individuals to be transferred, and during the transfer, the first individual LT is arranged above the hill Q. During the transfer, the non-selected individuals LN in the individual group may not contact the second substrate SK. The second substrate SK includes an electrode pad P1, and at least a portion of the electrode pad P1 may be located at the hill Q. The first individual LT includes an anode 9A, and the anode 9A and the electrode pad P1 may contact each other. Fig.24 1 is a cross-sectional view showing a method for manufacturing a semiconductor laser device according to an embodiment. Fig.24 In this way, the electrode pad P1 may include: a thick film portion PD located at the hill portion Q; and a thin film portion PF having a film thickness smaller than the thick film portion PD. Since the second substrate SK has the hill portion Q, when a plurality of individuals are selectively transferred to the second substrate SK by a bonding method that does not use solder, such as Au (gold)-Au (gold) bonding, the possibility that individuals that are not the transfer target are transferred to the second substrate SK is reduced.

[0087] [Additional Notes]

[0088] The present disclosure is not limited to the above-mentioned embodiments and examples. The forms obtained by appropriately combining the means of the techniques respectively described in the embodiments and examples are also included in the scope of the present disclosure. It is hoped that it will be noted that as long as one is skilled in the art, it is easy to make various modifications or corrections based on the present disclosure, and the forms obtained by these modifications or corrections are also included in the scope of the present disclosure.

[0089] 〔Summary〕

[0090] The manufacturing method of the semiconductor laser device in mode 1 of the present disclosure includes the following steps: preparing a semiconductor substrate having a first substrate and a plurality of strip-shaped semiconductor parts crystallized and grown on the first substrate; dividing a plurality of structures respectively including the plurality of semiconductor parts on the first substrate into end faces parallel to the short side directions appearing in each structure, thereby obtaining an individual group; transferring the plurality of individuals contained in the individual group to a second substrate; and dividing the second substrate to obtain a plurality of element substrates each including one or more individuals.

[0091] The manufacturing method of the semiconductor laser device in the method 2 of the present disclosure is based on the method 1, and the end face functions as a resonator end face, and selective transfer is performed such that the number of transferred individuals per unit area to the second substrate is smaller than the number of individuals per unit area in the individual group, and the second substrate is divided so that no individual is divided.

[0092] The manufacturing method of the semiconductor laser device in the method 3 of the present disclosure is based on the method 2, wherein the direction corresponding to the short side direction of the multiple semiconductor parts in the second substrate is set as the first direction, and the direction corresponding to the long side direction is set as the second direction, and the multiple individuals transferred to the second substrate are arranged in a matrix in the first direction and the second direction.

[0093] A method for manufacturing a semiconductor laser device according to a fourth aspect of the present disclosure is based on the third aspect, wherein the interval between the plurality of entities in the second direction is equal to or larger than a dimension of each entity in the second direction.

[0094] A method for manufacturing a semiconductor laser device according to a fifth aspect of the present disclosure is based on the fourth aspect, wherein the intervals between the plurality of units in the second direction are a natural number multiple of the size.

[0095] A method for manufacturing a semiconductor laser device according to a sixth aspect of the present disclosure is based on any one of the third to fifth aspects, wherein the second substrate has a plurality of recesses arranged in a matrix in the first and second directions.

[0096] A method for manufacturing a semiconductor laser device according to a seventh aspect of the present disclosure is based on the sixth aspect, wherein an end surface parallel to the short-side direction of each body transferred to the second substrate is located above one of the plurality of recessed portions.

[0097] A method for manufacturing a semiconductor laser device according to an eighth aspect of the present disclosure is based on the sixth or seventh aspect, wherein a cross section formed by cutting the second substrate includes at least one of the plurality of recessed portions.

[0098] A method for manufacturing a semiconductor laser device according to a ninth aspect of the present disclosure is according to any one of the third to eighth aspects, wherein two or more of the plurality of element substrates are arranged in a row in the first direction.

[0099] A method for manufacturing a semiconductor laser device in a tenth aspect of the present disclosure is the method according to the ninth aspect, wherein a dielectric film is formed on the end faces of two or more elements arranged in a row in each element substrate.

[0100] A method for manufacturing a semiconductor laser device in aspect 11 of the present disclosure is based on the aspect 4 or 5, wherein a dielectric film is formed on the end faces of each of the plurality of units arranged in a matrix on the second substrate before the step of obtaining the plurality of element substrates.

[0101] A method for manufacturing a semiconductor laser device according to a twelfth aspect of the present disclosure is any one of the above-described aspects 1 to 11, wherein the cavity length of each unit is 200 μm or less.

[0102] A method for manufacturing a semiconductor laser device according to a thirteenth aspect of the present disclosure is characterized in that, in any one of the first to twelfth aspects, the plurality of base bodies are obtained by stealth dicing the second substrate.

[0103] A method for manufacturing a semiconductor laser device according to a fourteenth aspect of the present disclosure is according to any one of the first to thirteenth aspects, wherein the end face is formed by cleavage or etching.

[0104] A method for manufacturing a semiconductor laser device according to a fifteenth aspect of the present disclosure is according to any one of the first to fourteenth aspects, wherein each semiconductor portion includes a nitride semiconductor, and the end face is parallel to an m-plane of the nitride semiconductor.

[0105] A method for manufacturing a semiconductor laser device according to a sixteenth aspect of the present disclosure is any one of the first to fifteenth aspects, wherein the first and second substrates each include a silicon substrate or a silicon carbide substrate.

[0106] A method for manufacturing a semiconductor laser device according to a seventeenth aspect of the present disclosure is according to any one of the first to sixteenth aspects, wherein each of the plurality of units is electrically connected to an electrode pad of the second substrate while the plurality of units are transferred to the second substrate.

[0107] A method for manufacturing a semiconductor laser device according to an eighteenth aspect of the present disclosure is according to any one of the first to seventeenth aspects, and further includes the step of dividing the semiconductor substrate including the plurality of units into a plurality of individual pieces.

[0108] A method for manufacturing a semiconductor laser device according to a nineteenth aspect of the present disclosure, in any one of the first to eighteenth aspects, includes the step of scribing each structure.

[0109] The method for manufacturing a semiconductor laser device in mode 20 of the present disclosure is based on any one of modes 1 to 19, wherein the plurality of semiconductor portions each include a GaN-based semiconductor, and the first substrate includes a wafer containing a material having a smaller thermal expansion coefficient than the GaN-based semiconductor.

[0110] A method for manufacturing a semiconductor laser device according to a twenty-first aspect of the present disclosure is provided according to any one of the first to twenty aspects, wherein when the plurality of entities are transferred to the second substrate, a connecting crystal portion between each entity and the first substrate is broken.

[0111] A method for manufacturing a semiconductor laser device in an aspect 22 of the present disclosure is according to any one of aspects 1 to 21, wherein each structure includes a ridge made of a nitride semiconductor, an electrode, and an insulating film.

[0112] A method for manufacturing a semiconductor laser device in a twenty-third aspect of the present disclosure is based on the twenty-second aspect, wherein at least one of the electrode and the insulating film is not included in the end faces formed by dividing each structure.

[0113] A method for manufacturing a semiconductor laser device according to a twenty-fourth aspect of the present disclosure is characterized in that, in addition to the foregoing twenty-second or twenty-third aspect, the end face includes a cross section of the ridge, and the cross section functions as a cavity end face.

[0114] The manufacturing method of the semiconductor laser device in mode 25 of the present disclosure is based on the mode 1, wherein the first individual as one of the multiple individuals to be transferred includes an anode, and the second substrate has a first protrusion corresponding to the first individual, and during transfer, the first protrusion is located at a position closer to the inside than the anode.

[0115] The manufacturing method of the semiconductor laser device in mode 26 of the present disclosure is based on the mode 1, wherein the first individual as one of the multiple individuals to be transferred includes an anode, and the second substrate has a second protrusion corresponding to the first individual, and during transfer, the second protrusion is located at a position further outward than the anode.

[0116] The manufacturing method of the semiconductor laser device in mode 27 of the present disclosure is based on the mode 1, wherein the first individual as one of the multiple individuals to be transferred includes an anode, and the second substrate has a first groove portion corresponding to the first individual, and during transfer, the first groove portion is located at a position closer to the inside than the anode.

[0117] The manufacturing method of the semiconductor laser device in mode 28 of the present disclosure is based on the mode 1, in which the first individual as one of the multiple individuals to be transferred includes an anode, and the second substrate has a second groove portion corresponding to the first individual, and during transfer, the second groove portion is located at a position further outward than the anode.

[0118] A method for manufacturing a semiconductor laser device according to a twenty-ninth aspect of the present disclosure is based on the twenty-seventh aspect, wherein the first groove portion has a side wall made of metal.

[0119] A method for manufacturing a semiconductor laser device according to a 30th aspect of the present disclosure is provided in the 2nd aspect, wherein the second groove portion has a side wall made of metal.

[0120] A method for manufacturing a semiconductor laser device according to a thirty-first aspect of the present disclosure is provided according to any one of the twenty-fifth to thirtyth aspects, wherein the anode is bonded to the second substrate via solder.

[0121] The method for manufacturing a semiconductor laser device in mode 32 of the present disclosure is based on the mode 1, wherein the second substrate has a hill portion corresponding to a first body that is one of the multiple bodies to be transferred, and during transfer, the first body is arranged above the hill portion.

[0122] A method for manufacturing a semiconductor laser device in a 33rd aspect of the present disclosure is based on the 32nd aspect, wherein during transfer, non-selected individuals in the group of individuals do not come into contact with the second substrate.

[0123] A method for manufacturing a semiconductor laser device according to a 34th aspect of the present disclosure is based on the 32nd or 33rd aspect, wherein the second substrate includes an electrode pad, and at least a portion of the electrode pad is located in the hill portion.

[0124] A method for manufacturing a semiconductor laser device in a 35th aspect of the present disclosure is based on the 34th aspect, wherein the electrode pad has: a thick film portion located at the hill portion; and a thin film portion having a film thickness smaller than that of the thick film portion.

[0125] A method for manufacturing a semiconductor laser device in a 36th aspect of the present disclosure is based on the 34th or 35th aspect, wherein the first body includes an anode, and the anode is in contact with the electrode pad.

[0126] The semiconductor laser device manufacturing apparatus according to the aspect 25 of the present disclosure performs each step described in any one of the aspects 1 to 24.

[0127] Explanation of symbols

[0128] 1 Main base board

[0129] 4 Base

[0130] 5 Mask Department

[0131] 6 Mask Pattern

[0132] 8 Semiconductor Division

[0133] 10 Semiconductor substrate

[0134] 20 Component substrate (semiconductor laser device)

[0135] 30 Component substrate (semiconductor laser device)

[0136] 40 Laser components (semiconductor laser devices)

[0137] JT Construct

[0138] CF end face

[0139] LT individual (laser body)

[0140] BS Base Substrate

[0141] FK 1st base plate

[0142] SK 2nd base plate

[0143] K Opening

[0144] G Gap.

Claims

1. A method for manufacturing a semiconductor laser device, comprising: A step of preparing a semiconductor substrate including a first substrate and a plurality of semiconductor portions in a stripe shape crystal-grown on the first substrate; A step of dividing, on the first substrate, a plurality of structures each including the plurality of semiconductor portions into groups of structures having end faces parallel to the short side direction; a step of transferring a plurality of individuals included in the individual group to a second substrate; and The step of dividing the second substrate to obtain a plurality of element substrates each including one or more individuals.

2. The method for manufacturing a semiconductor laser device according to claim 1, wherein: The end surface comprises a resonator end surface, performing selective transfer such that the number of transferred entities per unit area to the second substrate is smaller than the number of entities per unit area in the entity group, The second substrate is divided so that no individual part is broken.

3. The method for manufacturing a semiconductor laser device according to claim 2, wherein: A direction corresponding to the short side direction of the plurality of semiconductor portions in the second substrate is defined as a first direction, and a direction corresponding to the long side direction is defined as a second direction. The plurality of entities transferred to the second substrate are arranged in a matrix in the first direction and the second direction.

4. The method for manufacturing a semiconductor laser device according to claim 3, wherein: The intervals between the plurality of entities in the second direction are equal to or larger than the dimensions of each entity in the second direction.

5. The method for manufacturing a semiconductor laser device according to claim 4, wherein: The intervals between the plurality of entities in the second direction are a natural number multiple of the size.

6. The method for manufacturing a semiconductor laser device according to claim 3, wherein: The second substrate has a plurality of recessed portions arranged in a matrix in the first direction and the second direction.

7. The method for manufacturing a semiconductor laser device according to claim 6, wherein: An end surface parallel to the short-side direction of each body transferred to the second substrate is located above one of the plurality of recessed portions.

8. The method for manufacturing a semiconductor laser device according to claim 6, wherein: A cross section formed by cutting the second substrate includes at least one of the plurality of recessed portions.

9. The method for manufacturing a semiconductor laser device according to claim 3, wherein: In each of the plurality of element substrates, two or more are arranged in a row in the first direction.

10. The method for manufacturing a semiconductor laser device according to claim 9, wherein: A dielectric film is formed on the end faces of two or more elements arranged in a row in each element substrate.

11. The method for manufacturing a semiconductor laser device according to claim 4, wherein: Before the step of obtaining the plurality of element substrates, a dielectric film is formed on the end faces of each of the plurality of units arranged in a matrix on the second substrate.

12. The method for manufacturing a semiconductor laser device according to claim 1, wherein: The length of each individual resonator is 200 μm or less.

13. The method for manufacturing a semiconductor laser device according to claim 1, wherein: The plurality of element substrates are obtained by stealth dicing the second substrate.

14. The method for manufacturing a semiconductor laser device according to claim 1, wherein: The end face is formed by cleaving or etching.

15. The method for manufacturing a semiconductor laser device according to claim 1, wherein: Each semiconductor portion includes a nitride semiconductor, The end face is parallel to the m-plane of the nitride semiconductor.

16. The method for manufacturing a semiconductor laser device according to claim 1, wherein: The first substrate and the second substrate each include a silicon substrate or a silicon carbide substrate.

17. The method for manufacturing a semiconductor laser device according to claim 1, wherein: While the plurality of units are being transferred to the second substrate, each unit is electrically connected to an electrode pad of the second substrate.

18. The method for manufacturing a semiconductor laser device according to claim 1, wherein: The method for manufacturing the semiconductor laser device includes the step of dividing a semiconductor substrate including the plurality of units into a plurality of individual pieces.

19. The method for manufacturing a semiconductor laser device according to claim 1, wherein: The method for manufacturing the semiconductor laser device includes the following step: scribing each structure.

20. The method for manufacturing a semiconductor laser device according to claim 1, wherein: The plurality of semiconductor parts respectively include GaN-based semiconductors, The first substrate includes a wafer containing a material having a smaller thermal expansion coefficient than that of the GaN-based semiconductor.

21. The method for manufacturing a semiconductor laser device according to claim 1, wherein: When the plurality of entities are transferred to the second substrate, the connection crystal portion between each entity and the first substrate is broken.

22. The method for manufacturing a semiconductor laser device according to claim 1, wherein: Each structure includes a ridge made of a nitride semiconductor, an electrode, and an insulating film.

23. The method for manufacturing a semiconductor laser device according to claim 22, wherein: At least one of the electrode and the insulating film is not included in the end faces formed by dividing each structure.

24. The method for manufacturing a semiconductor laser device according to claim 22, wherein: The end face includes a cross section of the ridge, and the cross section functions as a resonator end face.

25. The method for manufacturing a semiconductor laser device according to claim 1, wherein: The first entity, one of the plurality of entities to be transferred, includes an anode, The second substrate has a first protrusion corresponding to the first body, During transfer, the first protrusion is located further inside than the anode.

26. The method for manufacturing a semiconductor laser device according to claim 1, wherein: The first entity, one of the plurality of entities to be transferred, includes an anode, The second substrate has a second protrusion corresponding to the first body, During transfer, the second protrusion is located outside the anode.

27. The method for manufacturing a semiconductor laser device according to claim 1, wherein: The first entity, one of the plurality of entities to be transferred, includes an anode, The second substrate has a first groove portion corresponding to the first body, During transfer, the first groove portion is located further inside than the anode.

28. The method for manufacturing a semiconductor laser device according to claim 1, wherein: The first entity, one of the plurality of entities to be transferred, includes an anode, The second substrate has a second groove portion corresponding to the first body, During transfer, the second groove portion is located outside the anode.

29. The method for manufacturing a semiconductor laser device according to claim 27, wherein: The first groove portion has a side wall made of metal.

30. The method for manufacturing a semiconductor laser device according to claim 28, wherein: The second groove portion has a side wall made of metal.

31. The method for manufacturing a semiconductor laser device according to any one of claims 25 to 30, wherein: The anode is bonded to the second substrate via solder.

32. The method for manufacturing a semiconductor laser device according to claim 1, wherein: The second substrate has a hill portion corresponding to a first object that is one of the plurality of objects to be transferred, and during transfer, the first object is arranged above the hill portion.

33. The method for manufacturing a semiconductor laser device according to claim 32, wherein: During transfer, non-selected individuals in the individual group do not come into contact with the second substrate.

34. The method for manufacturing a semiconductor laser device according to claim 32 or 33, wherein: The second substrate includes an electrode pad, At least a portion of the electrode pad is located on the hill portion.

35. The method for manufacturing a semiconductor laser device according to claim 34, wherein: The electrode pad includes: a thick film portion located at the hill portion; and a thin film portion having a film thickness smaller than that of the thick film portion.

36. The method for manufacturing a semiconductor laser device according to claim 34 or 35, wherein: The first body comprises an anode, The anode contacts the electrode pad.

37. A semiconductor laser device manufacturing apparatus, which performs the steps described in claim 1.

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