Film chip developing method

Abstract

The invention relates to the technical field of semiconductors, and particularly discloses a thin film chip developing method which comprises the following steps: S1, putting an exposed thin film chip into a first developing tank, soaking until the surface of the chip shows an obvious pattern outline and accompanies with a ghost image, controlling the thin film chip to be reversed and inclined for multiple times at any two ends inside and outside a developing solution, and then taking out the thin film chip; an obvious pattern appears on the surface of the thin film chip; s2, transferring the chip after the step S1 into a second developing tank for at least two times of static soaking, controlling any two ends of the chip inside and outside the developing solution to be reversed and inclined for multiple times after each time of soaking so as to enable the dissolved photoresist to flow out from the surface of the chip, washing the surface of the chip while the chip is inclined, and circulating the whole process until the development is completed by 90% or more; and S3, transferring the thin film chip subjected to the step S2 into a third developing tank for static soaking, and then carrying out global flushing until the thin film chip is completely developed. The scheme is used for providing a developing technology which is low in photoresist threshold, higher in production efficiency and lower in cost.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor technology, and in particular to a thin film chip developing method. Background Art

[0002] The development method of thin film chips plays an important role in the field of science and technology, especially in the fields of microelectronics, materials science and precision measurement. By developing the thin film chip after photolithography, multiple tiny electronic components can be accurately produced on the thin film chip at one time. For example, multiple platinum resistance patterns can be produced on the thin film chip by the development method, thereby realizing the batch molding of platinum resistance temperature sensors. This technology has a wide range of applications in the fields of microelectronics, materials science and precision measurement.

[0003] Existing thin film chip development methods often have some limitations and have high requirements for the quality of photoresists. Many companies still choose lower-priced ordinary quality photoresists for production. However, using existing development technology to develop ordinary quality photoresists is more likely to cause component circuit deformation, line contour loss, line breakage, etc., which inevitably leads to low production efficiency and low product qualification rate. In order to solve such problems, the research and development of a development technology with a low threshold for photoresists, higher production efficiency and lower cost has important research significance and value.

[0004] The following are the main existing development methods:

[0005] The first method adopts a method of spraying / dripping developer while rotating (such as the development method of the photolithography process with patent announcement number CN102385262A), and realizes rapid development by controlling parameters such as rotation speed, developer concentration and dripping speed. The advantage of this method is that the development speed is fast, but the disadvantages are also very obvious. It has extremely high requirements on the quality of photoresist, and also has high requirements on the control of flow rate, rotation speed and dripping speed. In addition, for thin-film chips, because the chip line width is relatively thin, the rotation operation and dripping of developer will cause deformation of component lines on the chip, missing line contours, and line disconnection.

[0006] The second method is to use a rotation method to first spray the developer on the wafer surface, then soak it, and then use rotation to throw out the developer on the wafer surface under centrifugal force. According to the development effect, the spray rotation-immersion-rotation throwing is repeated (such as the "A burr-free lithography method" with patent publication number CN107664926A and the "A secondary development method" with patent publication number CN102621828A). In this method, for components with narrow line width, problems such as line deformation still exist after the finished product is made.

[0007] At present, there is still a method of immersion development followed by direct cleaning (such as patent announcement number CN111863348A transparent conductor processing method, processing device, transparent conductor and touch screen). In this way, the amplitude and probability of circuit deformation are reduced, but in the narrow line width development of thin film chips, the consistency of the line width after development is still difficult to guarantee, and the development speed is slow, which is not conducive to production. Summary of the invention

[0008] The present invention is intended to provide a thin film chip development method, so as to provide a development technology with low threshold for photoresist, higher production efficiency and lower cost.

[0009] In order to achieve the above object, the present invention adopts the following technical scheme:

[0010] A thin film chip development method comprises the following steps:

[0011] S1, placing the exposed thin film chip into a first developing tank and soaking it until a clear pattern outline appears on the chip surface accompanied by a virtual image, and controlling the thin film chip to be turned upside down at least twice at either end inside or outside the developer until a clear pattern appears on the thin film chip surface;

[0012] S2, transferring the thin film chip after S1 to the second developing tank for at least two static soakings, and after each soaking, controlling the chip to be turned upside down at least twice at either end inside or outside the developer to allow the dissolved photoresist to flow out from the chip surface, and gently rinsing the surface of the thin film chip with the developer while the chip is tilted, and the whole process is repeated until the development is completed by 90% or more;

[0013] S3, transferring the thin film chip completed in S2 to the third developing tank for static immersion, and then performing full-area rinsing until it is completely developed.

[0014] The principle and advantage of this scheme are as follows: in step S1, the chip is immersed in the developer in a horizontal or nearly horizontal manner, so that the pattern is displayed by the first immersion. The displayed pattern is displayed during the static immersion process, which is equivalent to realizing the finalization of the pattern by static immersion, so there will be no line deformation, contour loss, etc. caused by the centrifugal force swinging or developer shaking in the prior art. In step S2, at least two static immersions are still performed to ensure that the pattern is continuously and clearly displayed under finalization. After each immersion, the chip is tilted to make the dissolved photoresist flow out. At the same time, the chip surface is rinsed with developer when the chip is tilted. Before rinsing the surface of the thin film chip, the degree of development completion of each area on the chip surface is judged according to the color change of the glue layer observed by visual recognition when the chip is tilted and suspended, and then the thicker glue layer area on the chip surface is rinsed in a targeted manner. This process ensures the consistency of the development rate of the chip surface in the whole area. Finally, in step S3, static immersion is still performed first, and then the whole area is rinsed. The purpose of the whole area rinse is to rinse off the residual photoresist and small particles on the chip surface, so as to promote the uniformity and qualified rate of all components on the chip surface.

[0015] During conventional development operations, blank areas will flow out at the edge of the chip, and no components will be arranged in such blank areas. Because the probability of defective products is higher when components are arranged in the edge areas of the chip, the edge areas are often left blank in the prior art to ensure a higher yield rate of components provided to subsequent processes. However, blank treatment also brings waste. In addition, in actual component production, there is a problem that even if the edges are blank, the yield rate still reaches a certain qualified rate and cannot be improved any further.

[0016] To this end, the inventors continued to study and statistically summarize the development process. After the inventors adopted the method of static immersion and then full-area cleaning, the chip line width was still difficult to be consistent. After the inventors adjusted and verified the developer concentration and the immersion time, the problem could not be solved. After summarizing and concluding, it was found that the different line widths on the chip were related to the location of the components. Therefore, the inventors divided the chip into an outer ring area, a middle ring area and an inner ring area according to the different line widths, and conducted a joint analysis of the previous and next processes on the partitions. It was found that the outer ring area was the thickest, the inner ring area was the second thickest, and the middle ring area was the thinnest. During the development process, the color of the outer ring area was the darkest, and the color of the middle ring was similar to that of the inner ring. Regarding the thickness of the photoresist, it is speculated that the possible reason why the outer ring is the thickest is that the centrifugal effect during photoresist leveling causes more photoresist to accumulate on the outer ring, while the inner ring is thicker because the chip is flat and the middle part is relatively concave. It is also possible that the photoresist first covers the inner ring during photoresist leveling, and the last photoresist added is also added from the inner ring. The centrifugal force of the inner ring is smaller, and the photoresist retained in the inner ring is relatively more than that in the middle ring, so the thickness is also relatively thick. The difference in thickness may also be related to the viscosity of the photoresist.

[0017] In light of the above findings, the inventors adjusted the developing method, dividing the developing process into three stages, allowing step S1 to first finalize the developing pattern, allowing step S2 to ensure the speed and efficiency of the developing, and observing the developing situation in S2 and focusing on flushing the outer ring and the inner ring with the developer to ensure that the line width and thickness of the chip components on the entire board tend to be consistent after flushing the outer ring, middle ring and inner ring, thereby ensuring the consistency of component quality in various areas on the chip, especially flushing the components in the inner ring area which is most easily overlooked, to ensure that the line width and line quality of the components in the inner ring area and the outer ring area are basically consistent with those in the middle ring area.

[0018] This solution breaks the existing development method using a rotary coating method and changes it to a step-by-step development method, ensuring that the thin film chip is gradually developed. The entire operation method is simple and controllable, which helps to reduce production costs and helps to improve production efficiency through assembly line production. In addition, since the development process needs to judge the degree of development completion of different areas based on the color change differences in different areas when the chip is immersed and the color change differences of the glue layer displayed when the chip is tilted and suspended in the air, different flushing times are controlled for different degrees of completion, thereby ensuring that this method can be used regardless of whether high-end quality photoresist or ordinary quality photoresist is used, which greatly reduces the quality requirements for photoresist, helps to reduce production costs, and solves the problems of component line deformation, line contour loss, line breakage, and low component qualification rate during the development process of photoresist.

[0019] In addition, after the technical scheme of step-by-step development is implemented, the manufactured thin film chip has the advantages of good uniformity of key dimensions of component patterns, overall uniformity of circuits, and high line integrity. Because the darkest color area occurs in the outer ring during the development process, if the outer ring is not rinsed separately, there is a problem of high defective rate of components produced in the outer ring, which increases the scrapping of materials; and if the inner ring is not rinsed separately, there is a problem of low consistency in the quality of components in the inner and middle rings. In this scheme, local rinsing is added according to the depth of color, so that the entire chip surface can be evenly developed, which helps to improve the yield rate of components, product consistency and improve chip utilization.

[0020] In addition, the development of this scheme is immersion development, and the developer is all in the developer tank during the immersion process, so there is no waste of developer, which improves the utilization rate of the developer; and the multiple tilting after immersion in the developer not only uses simple tilting to achieve the natural falling of the dissolved photoresist from the thin film chip, but also uses multiple tilting to form stirring of the developer, making the developer more uniform, which not only helps to improve the development efficiency but also helps to improve the utilization rate of the developer.

[0021] Preferably, as an improvement, during the tilting of S1 and S2, it is ensured that the thin film chip is repeatedly tilted at any two ends and the chip needs to be switched between outside the developer and inside the developer during the tilting to ensure that the dissolved photoresist falls off the thin film chip as quickly as possible, and when switching between inside and outside the liquid, stirring of the developer is achieved by tilting.

[0022] Preferably, as an improvement, steps S1, S2 and S3 are developed in different developing tanks respectively. By setting different developing tanks, it is convenient to control the developer concentration in each step, to reuse the developer, and to control the development quality.

[0023] Preferably, as an improvement, the concentration of the developer used for immersion in all steps may be the same or different. When the concentrations are different, the developer concentration in the second developing tank is the highest, so as to increase the speed of development and improve production efficiency.

[0024] Preferably, as an improvement, the thin film chip is immersed in S2 for at least two static times, the immersion time in step S2 is the longest, and the immersion time in step S3 is the shortest.

[0025] Preferably, as an improvement, in step S2, before each flushing of the thin film chip surface, the degree of development completion of different areas is judged based on the difference in color change of different areas when the chip is immersed and the difference in color change of the glue layer when the chip is tilted and suspended in the air. The darker the color, the lower the degree of development completion and the longer the flushing time required.

[0026] Preferably, as an improvement, in step S2, flushing of the chip surface focuses on flushing the inner and outer rings of the chip surface, and the flushing time of the outer ring is longer than the flushing time of the inner ring.

[0027] Preferably, as an improvement, it also includes a visual system, which includes an image acquisition module, a standard image database and a control module. Different standard images are stored in the standard image database, and each standard image has a corresponding cleaning time, cleaning flow rate and flow rate. When the image acquisition module is used in step S2, the real-time image data of the chip after immersion is first acquired, and the real-time image data is transmitted to the control module and the standard image is compared with the real-time image data to determine the closest standard image, and the dark-colored area is rinsed according to the cleaning time, cleaning flow rate and cleaning flow rate corresponding to the closest standard image.

[0028] Preferably, as an improvement, the control module divides the real-time image into regions according to the different colors on the chip, then searches for corresponding standard images in the standard image database according to the different regions, and flushes the dark-colored regions according to the cleaning time, cleaning flow rate, and cleaning flow rate corresponding to the standard images.

[0029] This solution improves the automatic recognition capability of the entire development process through the setting of the visual system, greatly reduces the experience and skill requirements for operators, and can ensure the quality consistency of components on the chip through the visual system.

[0030] In addition, after the chip is divided into regions, the required number of standard images in the standard image database is reduced. It is not necessary to enter standard images for each product of different specifications, which reduces the requirements for the standard image database and improves the practicality of the production of chips of different specifications, greatly reducing the acquisition and verification costs of test standard images.

[0031] Preferably, as an improvement, in step S3, after the immersed thin film chip is taken out from the developer, the entire thin film chip is rinsed with the developer. When the entire area is gently rinsed, the thin film chip needs to be completely exposed to clean off the residual photoresist and small particles between the chip surface components, graphics, and lines.

[0032] Preferably, as an improvement, the thin film chip is tilted at an angle ranging from 0 to 85°, and the average thickness of the photoresist layer before development is 0.8 to 25 μm.

[0033] The thin film chip development method proposed by the present invention optimizes the development operation mode, making the development process simpler, faster and less damaging to the thin film chip. At the same time, the method has a low threshold for photoresist, high production efficiency, low cost, and can realize rapid and large-scale development of thin film chips. The manufactured thin film chips have the advantages of good uniformity of key dimensions of component patterns, good overall uniformity of circuits, and high line integrity. BRIEF DESCRIPTION OF THE DRAWINGS

[0034] Figure 1 Schematic diagram of a thin film chip development method according to Embodiment 1 of the present invention. DETAILED DESCRIPTION

[0035] The following is further described in detail through specific implementation methods:

[0036] Embodiment 1

[0037] A thin film chip development method, the preparation method is referred to Figure 1 , the developing method comprises the following steps:

[0038] (1) First, the chip layer coated with photoresist is shaken to a specified average thickness, baked, and then exposed;

[0039] (2) Prepare the developer in a specific ratio and pour it into three developing tanks respectively;

[0040] (3) placing the exposed thin film chip into a first developing tank and soaking it until a clear pattern outline appears on the chip surface accompanied by a virtual image, and controlling the thin film chip to tilt upside down multiple times at either end inside or outside the developer until a clear pattern appears on the thin film chip surface;

[0041] (4) The chip in the first developing tank is transferred to the second developing tank for at least two static immersions. After each immersion, the chip is controlled to be tilted upside down and tilted multiple times at any two ends inside and outside the developer to allow the dissolved photoresist to flow out from the chip surface. While the chip is tilted, the surface of the thin film chip is gently rinsed with the developer. The whole process is repeated until the development is completed by 90%-95%. In this step, before rinsing the surface of the thin film chip each time, the degree of development completion of different areas is judged based on the color change difference of different areas when the chip is immersed and the color change difference of the glue layer visually observed when the chip is tilted and suspended in the air, so as to determine the rinsing time required for each area, and then the area with thicker glue layer on the chip surface is rinsed in a targeted manner. When rinsing the chip surface, the inner and outer ring areas of the thin film chip surface are rinsed with emphasis. The darker the color, the thicker the glue layer and the longer the rinsing time required, so as to ensure that the components in different areas can be developed consistently even if the photoresist thickness is different after this step.

[0042] (5) The chip in the second developing tank is transferred to the third developing tank for the final step of developing and soaking. After the developing and soaking, the chip is taken out above the liquid surface and fully rinsed with fresh developer or the developer in the third developing tank until the chip development is completed.

[0043] When the chip is washed, the thin film chip needs to be completely exposed; the tilt angle of the thin film chip ranges from 0 to 85°, and the average thickness of the photoresist layer before development is 0.8 to 25 μm.

[0044] The present invention is further described below in conjunction with embodiments.

[0045] Test Example 1

[0046] Prepare thin film chips with a minimum line width of 25μm.

[0047] (1) After the average thickness of the chip coated with photoresist is shaken to 20μm, it is baked on a heating table for 14 minutes. After baking, the chip is exposed for 8 seconds.

[0048] (2) Prepare the developer in a ratio of 13% (developer / pure water), and then pour it into three developer tanks respectively. The temperature of the prepared developer is 21°C.

[0049] (3) The chip is placed in the first developing tank for the first developing operation. First, the chip is immersed in the developer for 35 seconds until a clear graphic outline and a virtual shadow appear on the chip surface. Then, the chip is controlled to tilt in any direction in the developer for 4 times. During the tilting process, the developer is allowed to naturally wash away the dissolved photoresist.

[0050] (4) The chip that has been processed in the first developing tank is transferred to the second developing tank for the second step of developing operation, and the step (3) method is repeated twice, wherein the first immersion time of the chip in the developer is 25 seconds, and the second immersion time is 35 seconds. After the two immersions, the chip is controlled to tilt in any direction in the developer for 4 times respectively so that the developer naturally washes away the dissolved photoresist. After the above operation is completed, the chip is controlled to be above the developer liquid surface, and then the developer is sucked by the washing device to gently wash the inner ring area and the edge area (i.e., the outer ring area) of the chip surface. During the washing process, the chip is repeatedly tilted at any two ends until the development is completed by 97%. Before flushing the thin film chip surface in this step, the degree of development completion of different areas is judged based on the difference in color change of different areas when the chip is immersed and the difference in color change of the glue layer when it is tilted and suspended in the air, and the required flushing time for each area is determined. Then, the areas with thicker glue layers on the chip surface are flushed in a targeted manner. When flushing the chip surface, the inner and outer ring areas of the thin film chip surface are flushed in particular; the darker the color, the thicker the glue layer, and the longer the flushing time required, to ensure that after this step, even if the photoresist thickness of components in different areas is different, the development consistency can be guaranteed.

[0051] (5) The chip that has been processed in the second developing tank is transferred to the third developing tank for the final developing step. First, the chip is immersed in the developer for 10 seconds. Then, the chip is controlled to be suspended above the developer after being exposed to the developer liquid surface. At this time, the developer is sucked by the flushing device to gently flush the entire surface of the chip for 6 seconds.

[0052] The chip pattern prepared in this embodiment is clear as a whole, the circuit is uniform as a whole, and the line integrity is high.

[0053] Test Example 2

[0054] Prepare thin film chips with a minimum line width of 5μm.

[0055] (1) After the average thickness of the chip coated with photoresist is shaken to 14μm, it is baked on a heating table for 12 minutes. After baking, the chip is exposed for 5 seconds.

[0056] (2) Prepare the developer in a ratio of 13% to 10%, then pour the developer with a concentration of 10% into the first developing tank and the third developing tank, and pour the developer with a concentration of 13% into the second developing tank; the temperature of the prepared developer is 21°C.

[0057] (3) Place the chip in the first developing tank for the first developing operation. First, soak the chip in the developer for 30 seconds. Then, control the chip to tilt in any direction in the developer four times. During the tilting process, the developer is allowed to naturally wash away the dissolved photoresist.

[0058] (4) The chip that has been processed in the first developing tank is transferred to the second developing tank for the second developing operation, and the step (3) method is repeated twice, wherein the first immersion time of the chip in the developer is 20 seconds, and the second immersion time is 30 seconds. After the two immersions, the chip is controlled to tilt in any direction in the developer for 3 times respectively so that the developer naturally washes away the dissolved photoresist. After the above operation is completed, the chip is controlled to be above the developer liquid surface, and then the developer is sucked by the washing device to gently wash the inner ring area and edge area of ​​the chip surface. During the washing process, the chip is repeatedly tilted at any two ends until the development is completed by 95%. Before flushing the surface of the thin film chip in this step, the degree of development completion of different areas is judged based on the difference in color change of different areas when the chip is immersed and the difference in color change of the glue layer when it is tilted and suspended in the air, and the flushing time required for each area is determined. Then, the areas with thicker glue layers on the chip surface are flushed in a targeted manner. When flushing the chip surface, the inner and outer ring areas of the thin film chip surface are flushed in particular; the darker the color, the thicker the glue layer, and the longer the flushing time required, to ensure that after this step, even if the photoresist thickness of components in different areas is different, the development consistency can be guaranteed.

[0059] (5) The chip that has been processed in the second developing tank is transferred to the third developing tank for the final developing step. First, the chip is immersed in the developer for 10 seconds. Then, the chip is controlled to be suspended above the developer after being exposed to the developer liquid surface. At this time, the developer is sucked by the flushing device to gently flush the entire surface of the chip for 6 seconds.

[0060] The chip pattern prepared in this embodiment is clear as a whole, the circuit is uniform as a whole, and the line integrity is high.

[0061] Embodiment 2

[0062] The second embodiment is further improved on the basis of the first embodiment, and the details are as follows:

[0063] It also includes a visual system, which includes an image acquisition module, an image recognition module, a standard image database and a control module. The standard image database stores standard images with different color codes. The standard image database is divided into multiple sub-standard image databases according to the different colors of the middle ring area. Each sub-standard image database contains multiple standard images for comparison of the outer ring area and the inner ring area. Each standard image corresponds to a cleaning time, cleaning flow rate, and flow rate.

[0064] When the image acquisition module is used in step S2, the real-time image data of the immersed chip is first collected, the real-time image data is transmitted to the control module and the standard image is compared with the real-time image data to determine the closest standard image, and the dark-colored area is rinsed according to the cleaning time, cleaning flow rate, and cleaning flow corresponding to the closest standard image.

[0065] In order to reduce the cost of collecting standard images and improve the accuracy of flushing, the control module first pre-processes the real-time image, which includes denoising to eliminate noise; the controller divides the area according to the color, and then finds the corresponding sub-standard image database according to the color of the middle ring in the implementation image, matches the standard image with the highest adaptability for different areas in the corresponding sub-standard image database, and flushes the dark-colored areas according to the cleaning time, cleaning flow rate, and cleaning flow corresponding to the standard image.

[0066] This solution improves the automatic recognition capability of the entire development process through the setting of the visual system, greatly reduces the experience and skill requirements for operators, and can ensure the quality consistency of components on the chip through the visual system.

[0067] In addition, after the chip is divided into regions, the required number of standard images in the standard image database is reduced. It is not necessary to enter standard images for each product of different specifications, which reduces the requirements for the standard image database and improves the practicality of the production of chips of different specifications, greatly reducing the acquisition and verification costs of test standard images.

[0068] The above is only an embodiment of the present invention, and the common knowledge such as the known specific technical solutions and / or characteristics in the solution is not described in detail here. It should be pointed out that for those skilled in the art, without departing from the technical solution of the present invention, several modifications and improvements can be made, which should also be regarded as the protection scope of the present invention, and these will not affect the effect of the implementation of the present invention and the practicality of the patent. The scope of protection required by this application shall be based on the content of its claims, and the specific implementation methods and other records in the specification can be used to interpret the content of the claims.

Claims

1. A thin film chip development method, characterized in that: The steps include: S1, placing the exposed thin film chip into a first developing tank and soaking it until a clear pattern outline appears on the chip surface accompanied by a virtual image, and controlling the thin film chip to be turned upside down at least twice at either end inside or outside the developer until a clear pattern appears on the thin film chip surface; S2, transferring the thin film chip after S1 to the second developing tank for at least two static soakings, and after each soaking, controlling the chip to be turned upside down at least twice at either end inside or outside the developer to allow the dissolved photoresist to flow out from the chip surface, and gently rinsing the surface of the thin film chip with the developer while the chip is tilted, and the whole process is repeated until the development is completed by 90% or more; S3, transferring the thin film chip completed in S2 to the third developing tank for static immersion, and then performing full-area rinsing until it is completely developed.

2. A thin film chip development method according to claim 1, characterized in that: During the tilting of S1 and S2, ensure that the thin film chip is repeatedly tilted at any two ends and the chip needs to be switched between outside the developer and inside the developer during the tilting; when the chip surface is rinsed, the thin film chip needs to be completely exposed.

3. A thin film chip development method according to claim 1, characterized in that: The concentrations of the developer used for immersion in all steps may be the same or different. When the concentrations are different, the concentration of the developer in the second developing tank is the highest.

4. A thin film chip development method according to claim 1, characterized in that: The thin film chip is immersed in at least two static steps in step S2, wherein the immersion time required in step S2 is the longest and the immersion time required in step S3 is the shortest.

5. A thin film chip development method according to claim 1, characterized in that: In step S2, before each flushing of the thin film chip surface, the degree of development completion of different areas is judged based on the color change difference of different areas when the chip is immersed and the color change difference of the glue layer when the chip is tilted and suspended. The darker the color, the lower the degree of development completion and the longer the flushing time required.

6. A thin film chip development method according to claim 5, characterized in that: In step S2, the flushing of the chip surface focuses on flushing the inner and outer rings of the chip surface, and the flushing time of the outer ring is longer than the flushing time of the inner ring.

7. A thin film chip development method according to claim 5, characterized in that: It also includes a visual system, which includes an image acquisition module, a standard image database and a control module. Different standard images are stored in the standard image database, and each standard image has a corresponding cleaning time, cleaning flow rate and flow rate. When the image acquisition module is used in step S2, the real-time image data of the chip after immersion is first acquired, and the real-time image data is transmitted to the control module and the standard image is compared with the real-time image data to determine the closest standard image, and the dark-colored area is rinsed according to the cleaning time, cleaning flow rate and cleaning flow rate corresponding to the closest standard image.

8. A thin film chip development method according to claim 7, characterized in that: The control module divides the real-time image into regions according to the different colors on the chip, then searches for corresponding standard images in the standard image database according to the different regions, and rinses the dark-colored regions according to the cleaning time, cleaning flow rate, and cleaning flow rate corresponding to the standard images.

9. A thin film chip developing method according to claim 1, characterized in that: In step S3, after the immersed thin film chip is taken out from the developer, the thin film chip is fully rinsed with the developer. When the thin film chip is gently rinsed, it is required that the thin film chip is completely exposed.

10. A thin film chip developing method according to any one of claims 1 to 9, characterized in that: The tilt angle of the thin film chip ranges from 0 to 85 degrees, and the average thickness of the photoresist layer before development is from 0.8 to 25 μm.

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