Grinding head and chemical mechanical grinding equipment

Abstract

The invention discloses a grinding head and chemical mechanical grinding equipment, and the grinding head comprises M pressure chambers which define a circular area, M is a positive integer greater than 1, and each pressure chamber is used for applying pressure to opposite areas on a wafer to be ground; the M pressure chambers comprise N first pressure chambers and M-N second pressure chambers, and N is a positive integer smaller than M; the first pressure chamber is communicated with an external pressure control system through a first communication device in an on-off manner; and the second pressure chamber is communicated with the first pressure chamber through a second communication device in an on-off manner. The number of partitions and the partition range are dynamically adjusted by controlling opening or closing of the second communication device, so that dynamic partition is achieved, the number of pressure control systems is reduced, different partition modes are adopted, different wafer grinding requirements are met, and the yield and reliability of grinding products are guaranteed.

Description

Technical Field

[0001] The present application relates to the field of semiconductors, and more specifically to a polishing head and a chemical mechanical polishing device. Background Art

[0002] In the field of chemical mechanical polishing (CMP), according to Preston's law, the material removal rate (MRR) during polishing is usually proportional to the polishing pressure, which requires precise control of the polishing pressure (i.e., the normal stress of the polishing pad contacting the wafer surface) to achieve precise chemical mechanical polishing. Therefore, the design of the wafer bearing mechanism becomes one of the important factors in regulating the distribution of polishing pressure.

[0003] Although many wafer bearing structures have been proposed so far, the airbag compression fixture with a retaining ring is still the mainstream structure in the semiconductor CMP field today. In this structure, the back of the wafer is squeezed by a safety airbag composed of a soft film, so that the grinding pressure is evenly distributed, and the multi-zone airbag can be used to appropriately adjust the grinding pressure distribution of different partitions.

[0004] However, the existing wafer supporting structure has a fixed and unique partitioning scheme, and it is difficult to adjust the partitioning scheme. Summary of the invention

[0005] The present application is proposed to solve the above-mentioned problems. According to one aspect of the present application, a grinding head is provided, which includes: M pressure chambers enclosing a circular area, M is a positive integer greater than 1, and each pressure chamber is used to apply pressure to relatively located areas on a wafer to be ground; the M pressure chambers include N first pressure chambers and MN second pressure chambers, N is a positive integer less than M; the first pressure chamber is connected to an external pressure control system through a first connecting device in a switchable manner; the second pressure chamber is connected to the first pressure chamber through a second connecting device in a switchable manner.

[0006] The above embodiment has the following beneficial effects: the first pressure chamber in the pressure chamber is connected to the external pressure control system through the first connecting device, and the second pressure chamber is connected to the first pressure chamber through the second connecting device. When used, the second connecting device can be turned off, so that the first pressure chamber and the second pressure chamber are used as different partitions, and the first pressure chamber and the second pressure chamber are respectively adjusted to the pressure applied to the wafer to be ground. The second connecting device can also be opened to connect the first pressure chamber and the second pressure chamber, and the pressure applied to the wafer to be ground by the first pressure chamber and the second pressure chamber is adjusted together through the pressure control system, so that the first pressure chamber and the second pressure chamber are used as a partition to achieve the merging of the partitions. That is, on the basis of not changing the logic of the partition setting of the original M pressure chambers, the first pressure chamber and the second pressure chamber can be merged into one partition by controlling the opening or closing of the second connecting device, or the first pressure chamber and the second pressure chamber are independently controlled to dynamically adjust the number of partitions and the range of partitions, thereby achieving dynamic partitioning. Since only N first pressure chambers need to be connected to a pressure control system, and MN second pressure chambers do not need to be equipped with a corresponding pressure control system, the number of pressure control systems is reduced, and additional pressure control systems are effectively avoided, reducing production costs. In addition, different partitioning methods can be used to match different wafer grinding requirements while taking into account the grinding flatness of chemical mechanical grinding, thereby ensuring the yield and reliability of the grinding products.

[0007] In some embodiments of the present application, the number of the first pressure chambers is at least two, and two adjacent first pressure chambers are separated by a second pressure chamber.

[0008] The above embodiment has the following beneficial effects: by separating two adjacent first pressure chambers by a second pressure chamber, the second pressure chamber located between the two first pressure chambers can be merged with one of the two first pressure chambers, or can be merged with the other first pressure chamber, thereby forming different partitioning schemes and improving the flexibility and diversity of dynamic partitioning.

[0009] In some embodiments of the present application, a second pressure chamber adjacent to a first pressure chamber is connected to the adjacent first pressure chamber in an on-off manner via a second connecting device.

[0010] The above-mentioned embodiment has the following beneficial effects: by enabling the second pressure chamber adjacent to the first pressure chamber to be connected to the adjacent first pressure chamber in an on-off manner through the second connecting device, direct connection between the second pressure chamber and the first pressure chamber is achieved, thereby simplifying the difficulty of merging partitions and also simplifying the wiring complexity of the second connecting device.

[0011] In some embodiments of the present application, a second pressure chamber that is not adjacent to the first pressure chamber is connected to the first pressure chamber in an on-off manner through a second connecting device and other second pressure chambers.

[0012] The above-mentioned embodiment has the following beneficial effects: by enabling the second pressure chamber that is not adjacent to the first pressure chamber to be connected to the first pressure chamber in a switchable manner through the second connecting device and other second pressure chambers, indirect connection between the second pressure chamber and the first pressure chamber is achieved, thereby simplifying the wiring complexity of the second connecting device.

[0013] In some embodiments of the present application, the second connecting device includes: a second connecting pipe and a second valve arranged on the second connecting pipe, the first end of the second connecting pipe is connected to the second pressure chamber, and the second end of the second connecting pipe is connected to the first pressure chamber or the other second pressure chamber.

[0014] The above embodiment has the following beneficial effects: a second connecting device is formed by adopting a second connecting pipe and a second valve, and the first end of the second connecting pipe is connected to the second pressure chamber, and the second end of the second connecting pipe is connected to the first pressure chamber or other second pressure chambers, thereby facilitating direct connection between the first pressure chamber and the second pressure chamber, and also facilitating indirect connection between the second pressure chamber and the first pressure chamber through other second pressure chambers, thereby simplifying the wiring complexity of the second connecting device.

[0015] In some embodiments of the present application, the pressure chamber has a first surface and a second surface opposite to each other; wherein the first surface is used to abut against the wafer to be ground, and the second connecting tube is disposed on the second surface.

[0016] The above embodiment has the following beneficial effects: by arranging the second connecting pipe on the side of the pressure chamber away from the wafer to be ground, the second connecting pipe does not interfere with the pressure chamber applying pressure to the wafer to be ground, and does not occupy the setting space of the pressure chamber.

[0017] In some embodiments of the present application, the M pressure chambers include a circular pressure chamber and M-1 annular pressure chambers; wherein the circular pressure chamber and all the annular pressure chambers are concentrically arranged to enclose a circular area.

[0018] The above embodiment has the following beneficial effects: by adopting a zoning division scheme in which a circular pressure chamber and an annular pressure chamber are enclosed to form a circular area, the setting method of the zoning is simplified.

[0019] In some embodiments of the present application, the circular pressure chamber is connected to the adjacent annular pressure chamber in an on-off manner via a second connecting device; and the two adjacent annular pressure chambers are connected to each other in an on-off manner via a second connecting device.

[0020] The above embodiment has the following beneficial effects: by connecting two adjacent pressure chambers in sequence along the radial direction of the circular area, direct or indirect connection between the second pressure chamber and the first pressure chamber is facilitated.

[0021] In some embodiments of the present application, the first pressure chamber is a partial annular pressure chamber among the M-1 annular pressure chambers; the other annular pressure chambers and circular pressure chambers among the M-1 annular pressure chambers are all second pressure chambers.

[0022] The above embodiment has the following beneficial effects: by using part of the annular pressure chamber as the first pressure chamber directly connected to the external pressure control system, while the other annular pressure chambers and the circular pressure chambers are used as the second pressure chambers, which are directly or indirectly connected to the first pressure chamber, it is convenient to control the opening or closing of different second connecting devices and realize different partitioning schemes, so that dynamic partitioning can be performed according to needs to match different wafer grinding requirements and ensure the yield and reliability of the grinding products.

[0023] According to the second aspect of the present application, a chemical mechanical polishing device is also provided, which includes: a polishing pad, a polishing liquid supplier, a pressure control system, and any one of the above-mentioned polishing heads; the polishing liquid supplier is used to spray the polishing liquid onto the polishing pad; and the first pressure chamber is connected to the pressure control system in a way that can be turned on and off.

[0024] The above embodiment has the following beneficial effects: in the grinding head of the chemical mechanical grinding equipment shown above, without changing the logic of the original partition setting of the M pressure chambers, the first pressure chamber and the second pressure chamber can be combined into one partition by controlling the opening or closing of the second connecting device, or the first pressure chamber and the second pressure chamber are independently controlled to dynamically adjust the number of partitions and the partition range, thereby realizing dynamic partitioning. Since only the N first pressure chambers need to be connected to the pressure control system, and the MN second pressure chambers do not need to be provided with corresponding pressure control systems, the number of pressure control systems is reduced, and additional pressure control systems are effectively avoided, thereby reducing production costs. And on the basis of taking into account the grinding flatness of chemical mechanical grinding, different partitioning methods can be adopted to match different wafer grinding requirements to ensure the yield and reliability of the grinding products. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying any creative labor.

[0026] Figure 1 A schematic top view of the structure of the pressure chamber distribution shown in one embodiment of the present application; Figure 2 for Figure 1 A schematic structural cross-sectional view of a PP cross section showing the pressure chamber distribution; Figure 3 for Figure 1 A schematic cross-sectional view of the structure of the QQ section of the pressure chamber distribution is shown; Figure 4 This is a schematic structural perspective diagram of a connecting device according to an embodiment of the present application; Figure 5 A schematic diagram of the structure of the pressure chamber distribution shown in one embodiment of the present application; Figure 6 and Figure 7 A schematic diagram of pressure zones when the connecting device is in one state, shown in one embodiment of the present application; Figure 8 and Fig. 9 A schematic diagram of pressure zones when the connecting device is in another state according to an embodiment of the present invention.

[0027] Reference numerals: 11- first pressure chamber 12- second pressure chamber 21-first connecting device 22-second connecting device DETAILED DESCRIPTION

[0028] In order to make the purpose, technical solutions and advantages of the present application more obvious, the example embodiments according to the present application will be described in detail with reference to the accompanying drawings. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all the embodiments of the present application, and it should be understood that the present application is not limited to the example embodiments described herein. Based on the embodiments of the present application described in the present application, all other embodiments obtained by those skilled in the art without creative work should fall within the scope of protection of the present application.

[0029] In the following description, a large number of specific details are provided to provide a more thorough understanding of the present application. However, it is apparent to those skilled in the art that the present application can be implemented without one or more of these details. In other examples, in order to avoid confusion with the present application, some technical features well known in the art are not described.

[0030] It should be understood that the present application can be implemented in different forms and should not be interpreted as being limited to the embodiments set forth herein. On the contrary, providing these embodiments will make the disclosure thorough and complete, and will fully convey the scope of the present application to those skilled in the art.

[0031] The purpose of the terms used herein is only to describe specific embodiments and is not intended to be limiting of the present application. When used herein, the singular forms "one", "an" and "said / the" are also intended to include plural forms, unless the context clearly indicates another way. It should also be understood that the terms "consisting of" and / or "comprising", when used in this specification, confirm the presence of the features, integers, steps, operations, elements and / or parts, but do not exclude the presence or addition of one or more other features, integers, steps, operations, elements, parts and / or groups. When used herein, the term "and / or" includes any and all combinations of the relevant listed items.

[0032] In order to thoroughly understand the present application, a detailed structure will be proposed in the following description to illustrate the technical solution proposed by the present application. The optional embodiments of the present application are described in detail as follows, but in addition to these detailed descriptions, the present application may also have other implementation methods.

[0033] In conjunction with the accompanying drawings, some embodiments of the present application are described in detail below. In the absence of conflict, the following embodiments and features in the embodiments can be combined with each other.

[0034] First, the application scenario of the grinding head shown in the example of this application is introduced. The grinding head is a device used to adsorb, move and clamp the wafer when chemical mechanical grinding is performed on the wafer to be ground.

[0035] refer to Figure 1 , Figure 2 and Figure 3 The embodiment of the present application provides a grinding head including: M pressure chambers enclosing a circular area, M is a positive integer greater than 1, and each pressure chamber is used to apply pressure to relatively located areas on a wafer to be ground; the M pressure chambers include N first pressure chambers 11 and MN second pressure chambers 12, N is a positive integer less than M; the first pressure chamber 11 is connected to an external pressure control system via a first connecting device 21 in a switchable manner; the second pressure chamber 12 is connected to the first pressure chamber 11 via a second connecting device 22 in a switchable manner.

[0036] The above embodiment has the following beneficial effects: the first pressure chamber 11 in the pressure chamber is connected to the external pressure control system through the first connecting device 21 in a switchable manner, and the second pressure chamber 12 is connected to the first pressure chamber 11 in a switchable manner through the second connecting device 22. When used, the second connecting device 22 can be turned off, so that the first pressure chamber 11 and the second pressure chamber 12 are used as different partitions, and the first pressure chamber 11 and the second pressure chamber 12 can adjust the pressure applied to the wafer to be ground respectively. It is also possible to open the second connecting device 22 to connect the first pressure chamber 11 and the second pressure chamber 12, and adjust the pressure applied to the wafer to be ground by the first pressure chamber 11 and the second pressure chamber 12 together through the pressure control system, so that the first pressure chamber 11 and the second pressure chamber 12 are used as a partition, and the partitions are merged.

[0037] The pressure adjustment partitions of the grinding head in the related art are not adjustable. The same grinding head has a fixed and unique pressure adjustment partition scheme, and it is difficult to dynamically adjust the number and range of pressure adjustment partitions. In addition, the multiple pressure adjustment partitions of the grinding head in the related art can only give the same pressure in the same area, and cannot adjust the different pressure distributions in the same area. In addition, the number of pressure control systems must correspond to the number of pressure partitions in the related art, resulting in a large number of pressure control systems.

[0038] The grinding head shown in the above embodiment of the present application can control the opening or closing of the second connecting device 22 to merge the first pressure chamber 11 and the second pressure chamber 12 into one partition without changing the logic of the partition setting of the original M pressure chambers, or the first pressure chamber 11 and the second pressure chamber 12 are independently controlled to dynamically adjust the number of partitions and the range of partitions, thereby realizing dynamic partitioning, and then realizing different pressure distribution adjustments in the same area. Specifically, a certain area can be decomposed into partitions corresponding to multiple pressure chambers, some of which are the first pressure chambers 11, and some of which are the second pressure chambers 12. The number of partitions and the range of partitions are dynamically adjusted by opening or closing the second connecting device 22. In addition, in the present application, only N first pressure chambers 11 need to be connected to the pressure control system, and MN second pressure chambers 12 do not need to be set up with corresponding pressure control systems, thereby reducing the number of pressure control systems.

[0039] It can be seen that the above-mentioned embodiments of the present application effectively avoid an additional pressure control system and reduce production costs. It is also possible to adopt different partitioning methods to match different wafer grinding requirements on the basis of taking into account the grinding flatness of chemical mechanical grinding, thereby ensuring the yield and reliability of the grinding products. Moreover, the partitions corresponding to the designed first pressure chamber 11 and the second pressure chamber 12 can be merged or independently controlled, and the control means are adjustable and can be adapted to the grinding requirements of different situations.

[0040] The above structures are described in detail below in conjunction with the accompanying drawings.

[0041] Exemplarily, the grinding head may include an adsorption film for contacting the wafer to be ground, and the M pressure chambers may be arranged on the adsorption film, and the adsorption film constitutes the wall of each pressure chamber facing the side of the wafer to be ground. The adsorption film may be an elastic material, so that each pressure chamber forms an airbag structure, and the pressure applied to the wafer is adjusted by controlling the pressure inside the airbag structure.

[0042] Exemplarily, the pressure control system can control the pressure in the pressure chamber by means of compressible or incompressible fluids such as, but not limited to, gas, liquid, etc., thereby controlling the pressure applied by the pressure chamber to the wafer to be ground. The pressure control system can directly adjust the pressure in the first pressure chamber 11, and can also directly adjust the pressure of the second pressure chamber 12 connected to the first pressure chamber 11, thereby realizing the merger of the first pressure chamber 11 and the second pressure chamber 12.

[0043] Exemplarily, the above-mentioned M can be any integer value greater than 2, for example, M can be equal to 6, 8, 10, 12, 50, 60, 80, etc. The M pressure chambers enclose a circular area, and the pressure control area of ​​the grinding head is divided into M partitions and covered with the grinding head to grind the wafer to be ground.

[0044] Where N is a positive integer less than M. M is the maximum number of partitions, that is, the maximum number of partitions achieved by opening or closing the second connecting device 22 of the M pressure chambers is M. Wherein, when all the first pressure chambers 11 are connected to the pressure control system, N is the minimum number of partitions. The opening and closing of the second connecting device 22 can be controlled according to the maximum and minimum partition sizes required for the wafer to be polished, so as to dynamically adjust the number and range of pressure partitions on the polishing head.

[0045] When setting the placement position of the second pressure chamber 12, the placement positions of the MN second pressure chambers 12 should be placed around the position of the directly controlled first pressure chamber 11, and the placement method depends on the maximum and minimum number of partitions required for the wafer to be ground.

[0046] Exemplary, reference Figure 1~Figure 5 The number of the first pressure chambers 11 is at least two, and two adjacent first pressure chambers 11 are separated by a second pressure chamber 12. That is, MN second pressure chambers 12 are inserted between N first pressure chambers 11, so that each first pressure chamber 11 has a second pressure chamber 12 adjacent thereto.

[0047] The above embodiment has the following beneficial effects: by separating two adjacent first pressure chambers 11 by the second pressure chamber 12, the second pressure chamber 12 located between the two first pressure chambers 11 can be merged with one of the two first pressure chambers 11, or can be merged with the other first pressure chamber 11, thereby forming different partitioning schemes and improving the flexibility and diversity of dynamic partitioning.

[0048] It should be noted that the number of the second pressure chambers 12 between two adjacent first pressure chambers 11 may be one, or two or more. Some of the second pressure chambers 12 may be adjacent to the first pressure chambers 11, while some of the second pressure chambers 12 may not be adjacent to the first pressure chambers 11, that is, some of the second pressure chambers 12 may be separated from the first pressure chambers 11 by other second pressure chambers 12.

[0049] For different second pressure chambers 12, different ways of connecting and disconnecting the second pressure chambers 12 and the first pressure chambers 11 can be adopted. Some ways are exemplarily introduced as follows.

[0050] Exemplary, reference Figure 1~Figure 5 The second pressure chamber 12 adjacent to the first pressure chamber 11 is connected to the adjacent first pressure chamber 11 in an on-off manner through a second connecting device 22 .

[0051] The above-mentioned embodiment has the following beneficial effects: by enabling the second pressure chamber 12 adjacent to the first pressure chamber 11 to be connected and disconnected with the adjacent first pressure chamber 11 through the second connecting device 22, direct connection between the second pressure chamber 12 and the first pressure chamber 11 is achieved, the difficulty of merging partitions is simplified, and the wiring complexity of the second connecting device 22 is also simplified.

[0052] Exemplary, reference Figure 1~Figure 5 The second pressure chamber 12 which is not adjacent to the first pressure chamber 11 is connected to the first pressure chamber 11 in an on-off manner through the second connecting device 22 and other second pressure chambers 12 .

[0053] The above-mentioned embodiment has the following beneficial effects: by enabling the second pressure chamber 12 that is not adjacent to the first pressure chamber 11 to be connected to the first pressure chamber 11 in a switchable manner through the second connecting device 22 and other second pressure chambers 12, indirect connection between the second pressure chamber 12 and the first pressure chamber 11 is achieved, thereby simplifying the wiring complexity of the second connecting device 22.

[0054] When setting the first connecting device 21, various methods may be adopted, some of which are introduced in the following embodiments.

[0055] Exemplary, reference Figure 2and Figure 4 The first connecting device 21 includes: a first connecting pipe, and a first valve disposed on the first connecting pipe. The first end of the first connecting pipe is connected to the first pressure chamber 11, and the second end of the first connecting pipe is connected to the pressure control system. By closing and opening the first valve, the closing and connection between the pressure control system and the first pressure chamber 11 are controlled, so that the pressure control system controls the pressure in the first pressure chamber 11 to adjust the pressure applied by the first pressure chamber 11 to the partitions located relatively on the wafer to be polished.

[0056] The type of the first valve can be various, such as but not limited to a physical valve, an electromagnetic valve, etc., which can control the connection or disconnection of the connecting pipe. The control method of the first valve can be manual control or electric control.

[0057] Regarding the configuration of the second connecting device 22, various methods may be adopted, and some methods are exemplarily introduced as follows.

[0058] Exemplary, reference Figure 1 , Figure 3 and Figure 4 The second connecting device 22 includes: a second connecting pipe, and a second valve arranged on the second connecting pipe, the first end of the second connecting pipe is connected to the second pressure chamber 12, and the second end of the second connecting pipe is connected to the first pressure chamber 11 or other second pressure chambers 12.

[0059] The above embodiment has the following beneficial effects: the second connecting device 22 is formed by adopting the second connecting pipe and the second valve, and the first end of the second connecting pipe is connected to the second pressure chamber 12, and the second end of the second connecting pipe is connected to the first pressure chamber 11 or other second pressure chambers 12, so as to facilitate the direct connection between the first pressure chamber 11 and the second pressure chamber 12, and also facilitate the indirect connection between the second pressure chamber 12 and the first pressure chamber 11 through other second pressure chambers 12, thereby simplifying the wiring complexity of the second connecting device 22. Specifically, the second connecting pipe can be actively controlled to be opened or closed by the second valve, so as to control the partitioning, merging or independence of the two pressure chambers connected by the second connecting pipe.

[0060] Specifically, when the first end of the second connecting tube is connected to the second pressure chamber 12, and the second end of the second connecting tube is connected to the first pressure chamber 11, direct communication between the second pressure chamber 12 and the first pressure chamber 11 is achieved. The connection method at this time can be applied to the arrangement method in which the second pressure chamber 12 is adjacent to the first pressure chamber 11. Of course, the connection method can also be applied to the arrangement method in which the second pressure chamber 12 is not adjacent to the first pressure chamber 11, that is, when the second pressure chamber 12 is not adjacent to the first pressure chamber 11, a direct on-off communication method between the two can also be adopted.

[0061] When the first end of the second connecting tube is connected to the second pressure chamber 12, and the second end of the second connecting tube is connected to other second pressure chambers 12, at this time, the other second pressure chambers 12 can be connected to the first pressure chamber 11 through another second connecting tube, so as to realize indirect connection between the second pressure chamber 12 and the first pressure chamber 11 through other second pressure chambers 12. This connection mode can be applicable to the arrangement mode in which the second pressure chamber 12 has no adjacent first pressure chamber 11, and of course, based on some other purposes, it can also be applicable to the arrangement mode in which the second pressure chamber 12 is adjacent to the first pressure chamber 11.

[0062] The type of the second valve can be various, such as but not limited to a physical valve, an electromagnetic valve, etc., which can control the connection or disconnection of the connecting pipe. The control method of the second valve can be manual control or electric control.

[0063] It should be noted that, with regard to the setting method of the second connecting device 22, it is necessary to ensure that each second pressure chamber 12 can be directly or indirectly connected to at least one first pressure chamber 11, so as to realize the external pressure control system to control the pressure of the second pressure chamber 12 through the first pressure chamber 11 and the corresponding second connecting device 22, so as to adjust the pressure applied by the second pressure chamber 12 to the wafer to be ground.

[0064] Exemplary, reference Figure 2 , Figure 3 , Figure 4 and Figure 5 The pressure chamber has a first surface and a second surface relative to each other; wherein the first surface is used to abut against the wafer to be ground, and the second connecting tube is arranged on the second surface.

[0065] The above embodiment has the following beneficial effects: by arranging the second connecting pipe on the side of the pressure chamber away from the wafer to be ground, the second connecting pipe does not interfere with the pressure chamber applying pressure to the wafer to be ground, and does not occupy the setting space of the pressure chamber.

[0066] It should be understood that the second connecting device 22 is not limited to the above-mentioned method, and other methods may be used. For example, the second connecting device 22 may be arranged on a side wall shared by two adjacent pressure chambers to achieve a disconnectable connection between the two pressure chambers.

[0067] Exemplary, reference Figure 2 , Figure 3 , Figure 4 and Figure 5 The interface between the first connecting tube and the first pressure chamber 11 can also be set on the second surface, so that the first connecting tube does not interfere with the pressure chamber applying pressure to the wafer to be ground, and does not occupy the setting space of the pressure chamber.

[0068] Exemplary, reference Figure 1~Figure 5 , the M pressure chambers include a circular pressure chamber and M-1 annular pressure chambers; wherein the circular pressure chamber and all the annular pressure chambers are concentrically arranged to enclose a circular area. At this time, the first pressure chamber 11 can be a circular pressure chamber or an annular pressure chamber; the second pressure chamber 12 can be a circular pressure chamber or an annular pressure chamber.

[0069] The above embodiment has the following beneficial effects: by adopting a zoning division scheme in which a circular pressure chamber and an annular pressure chamber are enclosed to form a circular area, the setting method of the zoning is simplified.

[0070] It should be understood that the method of enclosing the circular area by the M pressure chambers is not limited to the above-mentioned method of enclosing by the circular + annular shape. In addition, other enclosing methods can also be used. For example, some of the pressure chambers can be fan-shaped chambers, and some of the pressure chambers can be fan-shaped chambers to enclose a circular area. For example, a block-shaped pressure chamber can be used to enclose a circular area.

[0071] Exemplary, reference Figure 1 The circular pressure chamber is connected to the adjacent annular pressure chamber in an on-off manner through a second connecting device 22 ; the two adjacent annular pressure chambers are connected to each other in an on-off manner through the second connecting device 22 .

[0072] The above embodiment has the following beneficial effects: by connecting two adjacent pressure chambers in sequence along the radial direction of the circular area, direct or indirect connection between the second pressure chamber 12 and the first pressure chamber 11 is facilitated.

[0073] Exemplary, reference Figure 1The first pressure chamber 11 is a partial annular pressure chamber among the M-1 annular pressure chambers; the other annular pressure chambers and circular pressure chambers among the M-1 annular pressure chambers are all second pressure chambers 12.

[0074] The above embodiment has the following beneficial effects: by using part of the annular pressure chamber as the first pressure chamber 11 directly connected to the external pressure control system, while the other annular pressure chambers and circular pressure chambers are used as the second pressure chambers 12, which are directly or indirectly connected to the first pressure chamber 11, it is convenient to control the opening or closing of different second connecting devices 22, and realize different partitioning schemes, so that dynamic partitioning can be performed according to needs to match different wafer grinding requirements and ensure the yield and reliability of the grinding products.

[0075] As follows, Figure 1 to Figure 9 Taking a distribution mode of pressure chambers and a setting mode of the first connecting device 21 and the second connecting device 22 as an example, some dynamic adjustment schemes of pressure zones are exemplarily introduced.

[0076] refer to Figure 1~Figure 5 , the total number of pressure chambers M=10, and the 10 pressure chambers include 1 concentrically arranged circular pressure chamber and 9 annular pressure chambers. For ease of explanation, the 10 pressure chambers can be defined as partitions 1-10 from the inside to the outside. The circular pressure chamber is the second pressure chamber 12, that is, partition 1 is the second pressure chamber 12, which has no direct on / off connection with the external pressure control system. Three of the 9 annular pressure chambers are first pressure chambers 11 (partitions 3, 6 and 9 are first pressure chambers 11), and the remaining 6 annular pressure chambers are second pressure chambers 12. Two adjacent first pressure chambers 11 are separated by two second pressure chambers 12. Reference Figure 6 and Figure 8 The three first pressure chambers 11 are connected to the external pressure control system through the first connecting devices 21A, 21B and 21C respectively. The number of the second connecting devices 22 is 9, and along the radial direction, any two adjacent pressure chambers can be connected and disconnected through a second connecting device 22. Regarding the opening and closing methods of the connecting devices, different methods can be adopted to achieve different partitioning schemes.

[0077] For example, refer to Figure 6 and Figure 7, the first connecting devices 21A, 21B and 21C are all opened, the second connecting device 22 between partition 5 and partition 6 is closed, the second connecting device 22 between partition 7 and partition 8 is closed, and the other second connecting devices 22 are opened. The wafer to be ground is finally divided into three areas, namely, area A composed of A1-A3, area B composed of B1-B2, and area C composed of C1-C5. The pressure in area A, area B and area C are controlled separately.

[0078] For example, refer to Figure 8 and Fig. 9 , the first connecting devices 21A and 21C are both opened, and the first connecting device 21B is closed. The second connecting device 22 between partition 6 and partition 7 is closed, and the other second connecting devices 22 are opened. The wafer to be ground is finally divided into two areas, namely area A composed of A1-A4 and area C composed of C1-C6, and pressure control is performed on area A and area C respectively.

[0079] Of course, in other embodiments, M can also be equal to 15, and the 15 pressure chambers include 1 concentrically arranged circular pressure chamber and 14 annular pressure chambers. Named as partitions 1-15 from outside to inside. The external air pressure control system can be directly connected to partitions 2, 5, 8, 11, and 14, that is, these partitions are the first pressure chamber 11. The remaining partitions are all second pressure chambers 12. The number of second connecting devices 22 is 14, which are respectively connected to two adjacent pressure chambers. The wafer can be divided into multiple overall areas for pressure control by controlling the opening and closing of the first connecting device 21 and the second connecting device 22.

[0080] In addition, the present application also provides a chemical mechanical polishing device, referring to Figure 1 to Figure 9 The chemical mechanical polishing equipment includes: a polishing pad, a polishing liquid supplier, a pressure control system, and any one of the above-mentioned polishing heads; the polishing liquid supplier is used to spray the polishing liquid onto the polishing pad; the first pressure chamber 11 is connected to the pressure control system in an on-off manner.

[0081] The above embodiment has the following beneficial effects: in the grinding head of the chemical mechanical grinding equipment shown above, without changing the logic of the original partition setting of the M pressure chambers, the first pressure chamber 11 and the second pressure chamber 12 can be merged into one partition by controlling the opening or closing of the second connecting device 22, or the first pressure chamber 11 and the second pressure chamber 12 are independently controlled to dynamically adjust the number of partitions and the range of the partitions, thereby realizing dynamic partitioning. Since only the N first pressure chambers 11 need to be connected to the pressure control system, and the MN second pressure chambers 12 do not need to be provided with a corresponding pressure control system, the number of pressure control systems is reduced, and additional pressure control systems are effectively avoided, thereby reducing production costs. And on the basis of taking into account the grinding flatness of chemical mechanical grinding, different partitioning methods can be adopted to match different wafer grinding requirements to ensure the yield and reliability of the grinding products.

[0082] The grinding pad assists in grinding the wafer by physical action. The grinding liquid assists in grinding the wafer by chemical action. The chemical mechanical grinding equipment may also include a grinding pad dresser, which is used to dress the grinding pad to maintain its grinding ability. The grinding pad can be set on a grinding disk, which is used to carry the above-mentioned overall equipment. Of course, the chemical mechanical grinding equipment may also include a control device, which is used to control the movement of each device in the chemical mechanical grinding equipment and the pressure supply of the pressure supply device. Of course, in addition to the above-mentioned devices, the chemical mechanical grinding equipment may also include any other auxiliary components.

[0083] The present application has been described through the above-mentioned embodiments, but it should be understood that the above-mentioned embodiments are only for the purpose of example and illustration, and are not intended to limit the present application to the scope of the described embodiments. In addition, it can be understood by those skilled in the art that the present application is not limited to the above-mentioned embodiments, and more variations and modifications can be made according to the teachings of the present application, and these variations and modifications all fall within the scope of protection claimed by the present application. The scope of protection of the present application is defined by the attached claims and their equivalents.

Claims

1. A grinding head, characterized in that: include: M pressure chambers enclosed in a circular area, M being a positive integer greater than 1, each of the pressure chambers being used to apply pressure to an area located opposite to the wafer to be polished; The M pressure chambers include N first pressure chambers and MN second pressure chambers, where N is a positive integer less than M; The first pressure chamber is connected to an external pressure control system via a first connecting device in an on-off manner; The second pressure chamber is connected to the first pressure chamber in an on-off manner via a second connecting device.

2. The grinding head according to claim 1, characterized in that: The number of the first pressure chambers is at least two, and two adjacent first pressure chambers are separated by the second pressure chamber.

3. The grinding head according to claim 1, characterized in that: The second pressure chamber adjacent to the first pressure chamber is connected to the adjacent first pressure chamber in an on-off manner through the second connecting device.

4. The grinding head according to claim 1, characterized in that: The second pressure chamber which is not adjacent to the first pressure chamber is connected to the first pressure chamber in an on-off manner through the second connecting device and other second pressure chambers.

5. The grinding head according to claim 1, characterized in that: The second communication device comprises: a second connecting pipe, wherein a first end of the second connecting pipe is connected to the second pressure chamber, and a second end of the second connecting pipe is connected to the first pressure chamber or another second pressure chamber; A second valve is arranged on the second connecting pipe.

6. The grinding head according to claim 5, characterized in that: The pressure chamber has a first surface and a second surface that are opposed; Wherein, the first surface is used to abut against the wafer to be ground, and the second connecting tube is arranged on the second surface.

7. The grinding head according to any one of claims 1 to 6, characterized in that: The M pressure chambers include a circular pressure chamber and M-1 annular pressure chambers; Wherein, the circular pressure chamber and all the annular pressure chambers are concentrically arranged to enclose the circular area.

8. The grinding head according to claim 7, characterized in that: The circular pressure chamber is connected to the adjacent annular pressure chamber in an on-off manner through the second connecting device; The two adjacent annular pressure chambers are connected in an on-off manner via the second connecting device.

9. The grinding head according to claim 7, characterized in that: The first pressure chamber is a partial annular pressure chamber among the M-1 annular pressure chambers; The other annular pressure chambers among the M-1 annular pressure chambers and the circular pressure chamber are both the second pressure chamber.

10. A chemical mechanical polishing device, characterized in that: include: Abrasive pads; A grinding liquid supplier, used for spraying the grinding liquid onto the grinding pad; Pressure control system; as well as, According to any one of claims 1 to 9, the first pressure chamber is connected to the pressure control system in an on-off manner.

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