A device for detecting performance of metal-containing extreme ultraviolet photoresist

Abstract

The present invention relates to the field of extreme ultraviolet lithography technology, and a metal-containing extreme ultraviolet photoresist performance detection device comprises: a photoresist film preparation module, a pre-baking module, an extreme ultraviolet light source module, a photoresist exposure module, an atmosphere module, a chemical change detection module, a developing module, a hard-baking module, a photoresist pattern characterization module, an air pressure regulating module, a vacuum module and a vibration isolation module. Photoresist films of different thicknesses and good film-forming properties are prepared, and pre-baked, and then the above-mentioned photoresist films are exposed by extreme ultraviolet interference lithography, and the chemical changes of the photoresist after extreme ultraviolet irradiation, especially the changes of chemical bonds in organic ligands, are studied, and then developed, hard-baked, and the photoresist pattern is characterized. It can be used to study the influence of different atmospheres such as oxygen, nitrogen, hydrogen, carbon dioxide, ammonia and water vapor on the photoresist lithography performance. This device can be used for the research and development of new extreme ultraviolet photoresists.

Description

Technical Field

[0001] The present invention relates to the field of extreme ultraviolet lithography, and in particular to a device for detecting the performance of metal-containing extreme ultraviolet photoresist, which can be used for the research and development of new extreme ultraviolet photoresist. Background Art

[0002] With the improvement of light sources and innovation of processes, photolithography machines continue to develop. In order to obtain smaller feature sizes, extreme ultraviolet lithography (EUVL) technology was introduced. The lithography wavelength has been reduced from 193 nm deep ultraviolet to 13.5 nm extreme ultraviolet. The sharp reduction of EUVL wavelength has brought new challenges to photoresist materials.

[0003] Photoresist is a radiation-sensitive material that is patterned through a mask. Depending on the layout of the mask, certain parts of the photoresist are exposed to irradiated light, which causes chemical changes in the photoresist in the exposed areas. Photoresist chemistry aims to convert the spatial energy distribution into a spatial distribution of photoresist solubility. Ultimately, the dissolution process transforms the continuous energy distribution of the projected spatial image into a binary photoresist image: the photoresist is either dissolved or remains on the wafer. Therefore, photochemically induced solubility changes are an important aspect of photoresist research and development.

[0004] As photolithography technology has developed, photoresists have also evolved, and different types of photoresists have been designed for different exposure wavelengths. Limited by the brightness of the EUV light source and the reflectivity of the Mo / Si multilayer film mirror, new requirements have been put forward for the sensitivity of the photoresist. The high-resolution graphic characteristics of the EUV require photoresist materials to have smaller component sizes, as few components as possible, and higher etching resistance. For polymer photoresists, including chemically amplified photoresists, the inherent large molecular weight of the polymer has disadvantages in improving the resolution and line edges of future technology nodes. The molecules that make up the photoresist need to be miniaturized, and a different photoresist chemistry than chemical enhancement needs to be used.

[0005] The absorption of EUV radiation by a photoresist depends largely on its atomic composition. The main challenge faced by traditional organic photoresists (mainly composed of C, H and O) is their low EUV absorption. The introduction of elements with high photon absorption cross-sections (especially metals) can improve sensitivity and reduce stochastic effects. Compared with traditional organic chemical amplification photoresists, metal-containing EUV photoresists have improved pattern fidelity due to reduced diffusion-based image blur; simplified processing schemes through the formation of a solid refractory metal oxide etching barrier on the pattern; and reduced pattern collapse due to relaxed thickness requirements. Metal-containing EUV photoresists are an important direction for the research and development of EUV photoresists.

[0006] Metal-containing EUV photoresists have received extensive attention. Organotin compounds provide high-resolution and high-sensitivity performance. The excellent properties of these materials are derived from the high EUV absorbance of tin, the radiation sensitivity of the tin-carbon bond, the regulated thermal response after exposure, and the high etching resistance. Metal oxide nanoparticle photoresists, such as HfO2-based nanoclusters, are capped with organic ligands, in which the inorganic core provides high etching resistance and high mechanical strength, while the organic shell is used to improve solubility and induce solubility conversion before and after exposure, while increasing photochemical sensitivity. Metal-organic frameworks have created a rich variety of metal-containing structures, such as zinc-based metal-organic clusters. Among them, the chemical changes of the photoresist after UV irradiation, especially the changes in the chemical bonds in the organic ligands (such as carbon-carbon double bonds and carboxyl groups, etc.), have an important influence on the change in photoresist solubility. In addition to Sn, Hf and Zn elements, elements such as Zr, Sb, Pd and Ag are also used to design EUV photoresists. The development of efficient metal-containing EUVL has promoted the development of EUVL. Therefore, it is urgent to test the performance (such as film forming properties and sensitivity) and chemical changes after irradiation of newly developed metal-containing EUV photoresists.

[0007] For chemically amplified photoresists, post-baking is an important step in the chemical reaction that forms the solubility difference between the exposed and unexposed parts. For this type of photoresist, exposure generates a small amount of strong acid, which itself does not change the solubility of the photoresist. During the post-baking process, the photogenerated acid catalyzes a reaction that changes the solubility of the polymer resin in the photoresist. This step is unnecessary for metal-based photoresists with different pattern formation mechanisms. Therefore, compared with chemically amplified photoresists, the process parameters of metal-containing EUV photoresists are also different, and the size of their metal nanoclusters needs to be detected.

[0008] With the development of new metal-containing extreme ultraviolet photoresists, it is urgent to study their performance (such as film forming properties and sensitivity) and process parameters (such as optimal pre-baking temperature and time, developing temperature and time, and hard-baking temperature and time). And give the chemical changes of photoresists after ultraviolet irradiation, especially the changes in chemical bonds in organic ligands. In addition, when the photoresist is exposed, the atmosphere (such as oxygen, nitrogen, hydrogen, carbon dioxide, ammonia and water vapor) in which it is located will also affect the photoresist lithography performance. Considering the complexity of the environment, it is necessary to study the impact of multiple atmospheres on the photoresist lithography performance. Therefore, it is necessary to design a multifunctional metal-containing extreme ultraviolet photoresist performance detection device to study the photoresist performance and process parameters; the chemical changes of photoresists after ultraviolet irradiation, especially the changes in chemical bonds in organic ligands; and the impact of multiple atmospheres on the photoresist lithography performance. Summary of the invention

[0009] In order to overcome the shortcomings of the above-mentioned prior art, the present invention provides a metal-containing extreme ultraviolet photoresist performance detection device, which solves the research on metal-containing extreme ultraviolet lithography performance and process parameters mentioned in the above background technology, the chemical changes of the photoresist after ultraviolet irradiation, especially the change research of chemical bonds in organic ligands, and the research on the influence of multiple atmospheres on the lithography performance of the photoresist.

[0010] The technical solution adopted by the present invention to achieve the above-mentioned purpose is as follows:

[0011] A metal-containing extreme ultraviolet photoresist performance detection device comprises: a photoresist film preparation module, a pre-baking module, an extreme ultraviolet light source module, a photoresist exposure module, an atmosphere module, a chemical change detection module, a developing module, a hard baking module, a photoresist pattern characterization module, an air pressure adjustment module, a vacuum module and a vibration isolation module.

[0012] The photoresist film preparation module is used to prepare photoresist film samples with different thicknesses and good film-forming properties. Photoresist films of different thicknesses are prepared by spin coating, with a spin coating speed range of 2000-5000 rpm and a spin coating time range of 10-60 s. The thickness of the photoresist film is characterized by atomic force microscopy; the film-forming properties of photoresists in different solvents and concentrations are studied, and the optimal film-forming conditions are selected; the size of metal nanoclusters in the film is characterized by scanning electron microscopy or transmission electron microscopy;

[0013] Pre-baking module, using a hot stage to pre-bake the photoresist film at different temperatures and for different times to remove excess solvent, and to study the effects of different pre-baking conditions on the stability of the film in subsequent photolithography processing. The pre-baking temperature range is 30-90°C, and the pre-baking time range is 10-600 s. The thickness of the photoresist film after pre-baking is measured using an atomic force microscope;

[0014] An extreme ultraviolet light source module, including an extreme ultraviolet light source, an irradiation time control electronic shutter and a transmission grating. The wavelength range of the extreme ultraviolet light source is 10-25 nm, the irradiation time control electronic shutter is used to control the irradiation time of the extreme ultraviolet light on the photoresist film, and the transmission grating is used to generate an interference beam. The module is placed in the first vacuum chamber;

[0015] A photoresist exposure module, comprising a zirconium disilicide film, a photoresist film sample, a photoresist film sample fixing table and an electric motion control system for the photoresist film sample fixing table. The module is connected to the extreme ultraviolet light source module via the zirconium disilicide film, and the zirconium disilicide film is used to prevent contamination of the light source module during photoresist exposure. The interference light beam passes through the zirconium disilicide film to reach the photoresist film sample and interferes therein, transferring the interference pattern to the photoresist film, and can expose different positions of the photoresist film sample. The module is placed in a second vacuum chamber;

[0016] The atmosphere module is used to study the effects of oxygen, nitrogen, hydrogen, carbon dioxide, ammonia and water vapor on the photoresist lithography performance, and its atmosphere pressure range is 0-100 Pa. The effects of single atmosphere or multiple atmospheres on the photoresist lithography performance can be studied. The atmosphere module is connected to the photoresist exposure module through a switch, and the atmosphere entering the photoresist exposure module is controlled by the switch.

[0017] Chemical change detection module, using UV-visible absorption spectrometer and infrared spectrometer to study the chemical changes of photoresist after extreme ultraviolet irradiation, especially the changes of chemical bonds in organic ligands, such as carbon-carbon double bonds and carboxylates;

[0018] The developing module takes the photoresist film sample out of the photoresist exposure module after exposure and performs developing. Different developing liquids, developing time and developing temperature can be selected, and the developing temperature range is 25-30°C;

[0019] The hard bake module hard bakes the photoresist film after development at a temperature range of 100–500°C.

[0020] The photoresist pattern characterization module uses a scanning electron microscope to characterize the photoresist pattern, including the line width and line edge roughness of the pattern. It also studies the relationship between different exposure doses and patterning, and gives the sensitivity of the photoresist. It gives the effects of different process parameters and different atmospheres on the pattern. Based on this, it gives the optimal pre-bake temperature and time, development temperature and time, and hard-bake temperature and time.

[0021] The air pressure regulating module, when the atmosphere module is not used, the pressure of the extreme ultraviolet light source module and the photoresist exposure module are equal; when the atmosphere module is used, in order to maintain the mechanical stability of the above-mentioned zirconium disilicide film, the pressure of the extreme ultraviolet light source module needs to be adjusted, and the first vacuum chamber is filled with hydrogen to prevent the zirconium disilicide film from being damaged.

[0022] Compared with the prior art, the present invention has the following beneficial effects:

[0023] 1) It integrates multiple functional modules such as photoresist film preparation, pre-baking, EUV exposure, atmosphere simulation, chemical change detection, development, hard-baking and pattern characterization, and can comprehensively and systematically evaluate the performance of photoresists in EUV lithography. It can provide the sensitivity and process parameters of metal-containing EUV photoresists (such as the optimal pre-baking temperature and time, development temperature and time, and hard-baking temperature and time); and for metal EUV photoresists, the present invention includes the detection of the size of metal nanoclusters;

[0024] After extreme ultraviolet radiation, chemical changes in metal-containing extreme ultraviolet photoresists, especially changes in chemical bonds in organic ligands (such as carbon-carbon double bonds and carboxyl groups, etc.), have an important influence on the change in photoresist solubility. In view of this, the present invention includes detection of chemical changes in photoresists after extreme ultraviolet exposure, especially changes in chemical bonds in organic ligands;

[0025] By using multiple chambers with different atmospheres, the effects of single or multiple atmospheres on the lithography performance of metal-containing EUV photoresists can be studied efficiently and flexibly.

[0026] 2) Through spin coating, pre-baking, exposure and development control, as well as characterization methods (such as atomic force microscopy, UV-visible absorption spectrometer, infrared spectrometer, scanning electron microscope, etc.), it is possible to accurately measure key parameters such as photoresist film thickness, chemical changes, pattern line width and line edge roughness. At the same time, the device is flexible in design and can adjust various parameters (such as spin coating speed, pre-baking temperature, exposure dose, atmosphere type, etc.) according to experimental requirements to meet the needs of different photoresist performance evaluations.

[0027] 3) By equipping the atmosphere module and the air pressure adjustment module, it is possible to simulate different atmosphere environments and pressure conditions to study the effect of atmosphere on the photoresist lithography performance. This environmental simulation capability helps to deeply understand the behavior of photoresist under different process conditions and provide a scientific basis for the improvement and adaptive design of photoresist. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] Figure 1 Schematic diagram of a device for detecting performance of metal-containing extreme ultraviolet photoresist according to an embodiment of the present invention;

[0029] Figure 2 It is a schematic diagram of an extreme ultraviolet light source module, a photoresist exposure module and an atmosphere module in the present invention;

[0030] In the figure: 201-extreme ultraviolet light source; 202-irradiation time controlled electronic shutter; 203-transmission grating; 204-zirconium disilicide film; 205-photoresist film sample; 206-photoresist film sample fixing table; 207-electric motion control system; 208-first vacuum chamber; 209-second vacuum chamber; 210-air pressure regulating module; 211-connection switch; 212-first atmosphere chamber; 213-second atmosphere chamber; 214-third atmosphere chamber; 215-fourth atmosphere chamber; 216-fifth atmosphere chamber; 217-sixth atmosphere chamber; 218-atmosphere mixing chamber. DETAILED DESCRIPTION

[0031] In order to facilitate the understanding of the present invention, the present invention is further described below in conjunction with the embodiments and drawings, wherein preferred embodiments of the present invention are given in the drawings. However, the present application can be implemented in many different forms, which should not limit the scope of protection of the present invention.

[0032] Unless otherwise defined, all technical and scientific terms used in this specification have the same meaning as those commonly understood by those skilled in the art of the present invention. The terms used in this specification are intended to describe specific embodiments and are not intended to limit this application.

[0033] The following are specific embodiments, which are intended to further explain the present invention in detail to help those skilled in the art further understand the present invention. The relevant technical conditions do not constitute any limitation to the present invention. Any form of modification made within the scope of the claims of the present invention is within the scope of protection of the claims of the present invention.

[0034] See also Figure 1 , Figure 1 : is a schematic diagram of a metal-containing extreme ultraviolet photoresist performance detection device according to an embodiment of the present invention. As shown, a metal-containing extreme ultraviolet photoresist performance detection device includes:

[0035] Photoresist film preparation module: used to prepare photoresist film samples with different thicknesses and good film forming properties. This embodiment is achieved by spin coating, with a spin coating speed in the range of 2000-5000 rpm and a spin coating time of 10-60s. The thickness of the photoresist film is characterized by atomic force microscopy. The film forming properties of the photoresist under different solvents and concentrations are studied, and the optimal film forming conditions are selected. The size of the metal nanoclusters in the film is characterized by a scanning electron microscope or a transmission electron microscope.

[0036] The pre-baking module uses a hot stage to pre-bake the above-mentioned photoresist film with good film forming properties to remove excess solvent. The pre-baking temperature range is 30-90°C, the pre-baking time range is 10-600 s, and the thickness of the photoresist film after pre-baking is measured using an atomic force microscope. The influence of different pre-baking conditions on the stability of the film in subsequent photolithography processing is studied.

[0037] The EUV light source module includes an EUV light source 201, an irradiation time control electronic shutter 202, and a transmission grating 203. The EUV light source has a wavelength range of 10-25 nm. The EUV light source 201 is used to generate EUV light. The irradiation time control electronic shutter 202 is used to control the irradiation time of the EUV light on the photoresist film. The transmission grating 203 is used to generate an interference beam. The module is placed in a first vacuum chamber to keep the EUV light propagating in a vacuum, such as Figure 2 shown.

[0038] The photoresist exposure module includes a zirconium disilicide film 204, a photoresist film sample 205, a photoresist film sample fixing table 206 and an electric motion control system 207. The photoresist film sample 205 is fixed on the photoresist film sample fixing table 206, and the electric motion control system 207 is used to control the position of the photoresist film sample fixing table 206, so as to achieve accurate exposure of different positions of the photoresist film by extreme ultraviolet light. The zirconium disilicide film 204 is located between the extreme ultraviolet light source and the photoresist. Its main function is to prevent pollutants generated during the photoresist exposure process from entering the light source module and to protect the cleanliness and stable operation of the light source. The interference light beam passes through the zirconium disilicide film to reach the photoresist film sample, and interferes therein, transferring the interference pattern to the photoresist film. The module is placed in a second vacuum chamber 209 to reduce the interference of the environment on the exposure process, such as Figure 2 shown.

[0039] Atmosphere module: used to study the effects of atmospheres such as oxygen, nitrogen, hydrogen, carbon dioxide, ammonia and water vapor on the photoresist lithography performance, with an atmosphere pressure range of 0-100 Pa. The atmosphere can be controlled to enter the photoresist exposure module through a switch, and the effects of a single atmosphere or multiple atmospheres on the photoresist lithography performance can be studied. It includes an air pressure regulating module 210, which is used to adjust the air pressure in the first vacuum chamber. When the atmosphere module is used, the zirconium disilicide film is protected from damage by filling it with gases such as hydrogen. The atmosphere module is connected to a switch 211, which is used to control a single or multiple atmospheres to enter the photoresist exposure module to simulate different process environments. The first atmosphere chamber 212 to the sixth atmosphere chamber 217: are used to store different gases, such as oxygen, nitrogen, hydrogen, carbon dioxide, ammonia and water vapor, respectively, to meet different experimental requirements. The atmosphere mixing chamber 218 is used to mix two or more gases to simulate a more complex process environment, as shown in Figure 2.

[0040] The chemical change detection module uses a UV-visible absorption spectrometer and an infrared spectrometer to study the chemical changes of the photoresist after extreme ultraviolet irradiation, especially the changes in chemical bonds in organic ligands, such as carbon-carbon double bonds and carboxyl groups. After the photoresist film sample is exposed to extreme ultraviolet light, the photoresist film sample is taken out from the above-mentioned photoresist exposure module, and the chemical changes of the photoresist after extreme ultraviolet irradiation are studied using a UV-visible absorption spectrometer and an infrared spectrometer, especially the changes in chemical bonds in organic ligands, such as carbon-carbon double bonds and carboxyl groups.

[0041] The developing module develops the irradiated photoresist film sample. Different developing solutions, developing times and developing temperatures can be selected. The developing temperature range is 25-30°C.

[0042] The hard bake module hard bakes the photoresist film after development at a temperature range of 100–500°C.

[0043] The photoresist pattern characterization module uses a scanning electron microscope to characterize the photoresist pattern, including the line width and line edge roughness of the pattern. It also studies the relationship between different exposure doses and patterning, and gives the sensitivity of the photoresist. It gives the effects of different process parameters and different atmospheres on the pattern. Based on this, it gives the optimal pre-bake temperature and time, development temperature and time, and hard-bake temperature and time.

[0044] The pressure regulating module, when using the atmosphere module, needs to regulate the pressure of the extreme ultraviolet light source module to maintain the mechanical stability of the zirconium disilicide film. The first vacuum chamber is filled with hydrogen to prevent the zirconium disilicide film from being damaged.

[0045] The vacuum module and the vibration isolation module keep the extreme ultraviolet light source module and the photoresist exposure module running in a vacuum environment. The entire device is placed in a vibration isolation system to reduce the impact of external vibration on the photolithography accuracy.

[0046] The working process of this device:

[0047] The extreme ultraviolet light source reaches the transmission grating through the irradiation time controlled electronic shutter and generates an interference beam, which reaches the photoresist film sample through the zirconium disilicide film and interferes therein, transferring the interference pattern to the photoresist film. The position of the photoresist film sample fixing table is controlled by the photoresist film sample fixing table electric motion control system, so that the extreme ultraviolet light is exposed at different positions of the photoresist film. The extreme ultraviolet light propagates in the vacuum chamber. The above device is placed in a vibration isolation system.

[0048] The present embodiment provides a metal-containing extreme ultraviolet photoresist performance detection device. It is used to study the performance and process parameters of the photoresist; it is used to study the chemical changes of the photoresist after extreme ultraviolet irradiation, especially the changes in chemical bonds in organic ligands; it can quickly and efficiently select a single or multiple atmospheres (such as oxygen, nitrogen, hydrogen, carbon dioxide, ammonia and water vapor) to study their effects on the photoresist lithography performance. The photoresist exposure module is connected to the extreme ultraviolet light source module through a zirconium disilicide film, and the zirconium disilicide film is used to prevent the contamination of the light source module during the exposure of the photoresist, especially in atmosphere research, to prevent the contamination of the light source module by the atmosphere. The metal-containing extreme ultraviolet photoresist performance detection system of the present invention includes but is not limited to the above structure, which includes all combinations that can produce the same light path.

Claims

1. A device for detecting the performance of metal-containing extreme ultraviolet photoresist, characterized in that: include: The photoresist film preparation module is used to prepare photoresist film samples of different thicknesses and film-forming properties, measure the thickness of the photoresist film using an atomic force microscope, and characterize the size of its metal nanoclusters using a scanning electron microscope or a transmission electron microscope; A pre-baking module, used for pre-baking the photoresist film at different temperatures and for different times to remove excess solvent, and measuring the thickness of the photoresist film after pre-baking using an atomic force microscope; An extreme ultraviolet light source module is placed in the first vacuum chamber and is used to generate a light source for detection; A photoresist exposure module is connected to the extreme ultraviolet light source module through a zirconium disilicide film and is placed in a second vacuum chamber. An interference light beam passes through the zirconium disilicide film to reach the photoresist film sample and interferes therein, and the interference pattern is transferred to the photoresist film. Extreme ultraviolet exposure is performed on different positions of the photoresist film sample. An atmosphere module, connected to the photoresist exposure module through a switch, is used to study the effects of different atmospheres on the photoresist lithography performance, the atmospheres including oxygen, nitrogen, hydrogen, carbon dioxide, ammonia and water vapor, and the atmosphere pressure range is 0-100 Pa; Chemical change detection module, used to study the chemical changes of photoresist after extreme ultraviolet irradiation, using UV-visible absorption spectrometer and infrared spectrometer for detection; The developing module is used to develop the photoresist film sample after exposure, and select different developing solutions, developing time and developing temperature, and the developing temperature range is 25-30℃; A hard baking module is used to hard bake the photoresist film after development, and the hard baking temperature ranges from 100 to 500°C; Photoresist pattern characterization module, used to characterize the photoresist pattern, including the line width and line edge roughness of the pattern, and to study the relationship between different exposure doses and patterning; A gas pressure regulating module, used to regulate the pressure of the extreme ultraviolet light source module when the atmosphere module is used, so as to maintain the mechanical stability of the zirconium disilicide film; A vacuum module, used to keep the extreme ultraviolet light source module and the photoresist exposure module operating in a vacuum environment; The vibration isolation module is used to place the entire device in a vibration isolation system to reduce the impact of external vibration on lithography accuracy.

2. The metal-containing extreme ultraviolet photoresist performance detection device according to claim 1, characterized in that: The photoresist film preparation module is also used to study the film forming properties of photoresist in different solvents and at different concentrations and select the best film forming conditions; and to measure the thickness of the photoresist film using an atomic force microscope and to characterize the size of its metal nanoclusters using a scanning electron microscope or a transmission electron microscope.

3. The metal-containing extreme ultraviolet photoresist performance detection device according to claim 1 or 2, characterized in that: The photoresist film preparation module prepares the photoresist film by spin coating, the spin coating speed ranges from 2000 to 5000 rpm, and the spin coating time ranges from 10 to 60 seconds.

4. The metal-containing extreme ultraviolet photoresist performance detection device according to claim 1, characterized in that: The photoresist exposure module exposes different positions of the photoresist film sample through the electric motion control system of the photoresist film sample fixing table.

5. The metal-containing extreme ultraviolet photoresist performance detection device according to claim 1, characterized in that: The pre-baking temperature of the pre-baking module ranges from 30 to 90° C., and the pre-baking time ranges from 10 to 600 s.

6. The metal-containing extreme ultraviolet photoresist performance detection device according to claim 1, characterized in that: The extreme ultraviolet light source module includes an extreme ultraviolet light source placed in a first vacuum chamber, an irradiation time-controlled electronic shutter, and a transmission grating, and the photoresist exposure module includes a zirconium disilicide film placed in a second vacuum chamber, a photoresist film sample, a photoresist film sample fixing table, and an electric motion control system; The extreme ultraviolet light source generates extreme ultraviolet light, which is irradiated onto the photoresist film sample through the irradiation time controlling the electronic shutter, the transmission grating and the zirconium disilicide film; The irradiation time control electronic shutter is used to control the irradiation time of the extreme ultraviolet light on the photoresist film sample; The transmission grating is used to generate an interference light beam; The photoresist film sample is placed on the photoresist film sample fixing table, and the electric motion control system controls the position of the photoresist film sample fixing table, thereby realizing the exposure of different positions of the photoresist film by extreme ultraviolet light.

7. The metal-containing extreme ultraviolet photoresist performance detection device according to claim 6, characterized in that: The atmosphere module includes multiple atmosphere chambers, each used to store different atmospheres, and an atmosphere mixing chamber, used to mix two or more atmospheres; it also includes an air pressure regulating module and a connecting switch, the air pressure regulating module regulates the pressure of the first vacuum chamber by filling hydrogen; the connecting switch is used to connect the photoresist exposure module with the atmosphere module, so as to control a single or multiple atmospheres to enter the photoresist exposure module to simulate different process environments.

8. The metal-containing extreme ultraviolet photoresist performance detection device according to claim 1, characterized in that: The invention also includes an analysis module for characterizing the sensitivity of the photoresist, which gives the sensitivity of the photoresist based on the relationship between different exposure doses and patterning, and the influence of different process parameters and atmospheres on the pattern.

9. The device for detecting the performance of metal-containing extreme ultraviolet photoresist according to any one of claims 1 to 2 and 4 to 8, characterized in that: Each module is connected through pipes, cables or control signals to achieve automatic control and data acquisition.

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