Substrate mounting table, substrate processing apparatus, and substrate processing method

Abstract

The invention provides a substrate carrying table, a substrate processing apparatus and a substrate processing method which can be used in a high-temperature process. A substrate mounting table for mounting a substrate, the substrate mounting table being provided inside a processing container for processing a substrate, the substrate mounting table comprising: an electrostatic chuck including a base material provided with a dielectric layer having a built-in adsorption electrode on a mounting surface on which the substrate is mounted; the heating plate is connected with the lower part of the electrostatic chuck and is made of aluminum or aluminum alloy; and a cooling plate which is connected below the heating plate and is made of aluminum or an aluminum alloy, the surface of the heating plate facing the cooling plate is a first surface, the surface of the cooling plate facing the heating plate is a second surface, and a gap space extending in the direction along the first surface and the second surface is formed between the heating plate and the cooling plate. At least one or both of the first surface exposed to the interstitial space and the second surface exposed to the interstitial space is provided with an aluminum oxide film.

Description

Technical Field

[0001] The invention relates to a substrate mounting table, a substrate processing device and a substrate processing method. Background Art

[0002] Patent document 1 states the following: a substrate holder is composed of a heat exchange jacket in which a heating medium circulates, a heat spreader for alleviating uneven temperature distribution on the flat heat exchange surface of the heat exchange jacket, and an electrostatic suction cup in which an adsorption electrode is buried in an insulating material. In the substrate holder, a fluorinated carbon-based heat medium heated to approximately 170°C is transported to the heat exchange jacket, and the electrostatic suction cup is uniformly heated via the heat spreader.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Laid-Open No. 05-29300 Summary of the invention

[0006] Technical problem to be solved by the invention

[0007] In one aspect, the present invention provides a substrate mounting table, a substrate processing apparatus, and a substrate processing method that can be used in a high temperature process.

[0008] Technical solutions for solving technical problems

[0009] In order to solve the technical problem, according to one embodiment, a substrate mounting table is provided, which is arranged inside a processing container for processing the substrate, and is used to mount the substrate, the substrate mounting table comprising: an electrostatic suction cup including a substrate, wherein the substrate is provided with a dielectric layer with a built-in adsorption electrode on a mounting surface for mounting the substrate; a heating plate, which is connected to the bottom of the electrostatic suction cup and is composed of aluminum or an aluminum alloy; and a cooling plate, which is connected to the bottom of the heating plate and is composed of aluminum or an aluminum alloy, the surface of the heating plate opposite to the cooling plate is a first surface, and the surface of the cooling plate opposite to the heating plate is a second surface, there is a gap space extending in the direction along the first surface and the second surface between the heating plate and the cooling plate, and at least one or both of the first surface exposed in the gap space and the second surface exposed in the gap space have an aluminum oxide coating.

[0010] Effects of the Invention

[0011] According to one aspect, the present invention can provide a substrate mounting table, a substrate processing apparatus, and a substrate processing method that can be used for high temperature processing. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1 This is a longitudinal sectional view showing an example of a plasma processing apparatus.

[0013] Figure 2 This is an example of a schematic cross-sectional view of the substrate mounting table according to the first embodiment.

[0014] Figure 3 This is an example of a partially enlarged schematic cross-sectional view of the substrate mounting table according to the first embodiment.

[0015] Figure 4 This is an example of a table showing the relationship between anodizing treatment and emissivity.

[0016] Figure 5 This is an example of a schematic cross-sectional view of a substrate mounting table of a reference example.

[0017] Figure 6 This is an example of a schematic cross-sectional view of a substrate mounting table according to the second embodiment.

[0018] Description of Reference Numerals

[0019] G substrate

[0020] 20 Processing Container

[0021] 70 substrate mounting table

[0022] 71 Electrostatic chuck

[0023] 711 Base Material

[0024] 711a substrate upper surface

[0025] 712 Dielectric layer

[0026] 713 Adsorption Electrode

[0027] 714 Ni plating

[0028] 72 Heating Plate

[0029] 72a Heating element

[0030] 721 Alumina coating

[0031] 73 Cooling Plate

[0032] 73a Heat medium flow path

[0033] 73b Feeding pipe

[0034] 73c Return piping

[0035] 731 Alumina coating

[0036] 74 Supporting parts

[0037] 75 Interstitial Space

[0038] 76a~76c, 77 sealing member

[0039] 78 Pedestal

[0040] 79 Focus ring

[0041] 89a Gas passage

[0042] 89b1 on-off valve

[0043] 89b2 On / Off Valve

[0044] 89c pressure sensor

[0045] 89d1 Gas supply source

[0046] 89d2 exhaust system

[0047] S1 first side

[0048] S2 Side 2

[0049] 90 Control Department

[0050] 100 Plasma treatment apparatus. DETAILED DESCRIPTION

[0051] Hereinafter, the mode for implementing the present invention will be described with reference to the accompanying drawings. In each of the drawings, the same components are denoted by the same reference numerals, and duplicate descriptions may be omitted.

[0052] [Plasma processing device]

[0053] use Figure 1 , a plasma processing apparatus 100 (substrate processing apparatus) is described. Figure 1 1 is a longitudinal sectional view showing an example of the plasma processing apparatus 100 .

[0054] Figure 1The plasma processing device 100 shown is an inductively coupled plasma (ICP) processing device that performs various substrate processing methods on a substrate G (hereinafter referred to as "substrate") that is rectangular when viewed from above for a flat panel display (Flat Panel Display, hereinafter referred to as "FPD"). As the material of the substrate, glass is mainly used, and sometimes transparent synthetic resins are used depending on the different uses. Here, the substrate processing includes film forming processing using CVD (Chemical Vapor Deposition) method, etching processing, etc. As FPD, liquid crystal display (Liquid Crystal Display: LCD), electroluminescence (Electro Luminescence: EL), plasma display panel (Plasma Display Panel: PDP), etc. are exemplified. In addition to the method of patterning the circuit on its surface, the substrate also includes a supporting substrate. In addition, the plane size of the FPD substrate has been increasing with the generation, and the plane size of the substrate G processed by the plasma processing apparatus 100 includes, for example, at least a size of about 1500 mm×1800 mm in the sixth generation to a size of about 3000 mm×3400 mm in the 10.5th generation. In addition, the thickness of the substrate G is about 0.2 mm to several mm.

[0055] Figure 1 The plasma processing apparatus 100 shown includes: a processing container 20 having a rectangular parallelepiped box shape; a substrate mounting table (mounting table) 70, which is arranged in the processing container 20 and can mount a substrate G and has a rectangular outer shape when viewed from above; and a control unit 90. In addition, the processing container may also be a cylindrical box shape, an elliptical cylindrical box shape, etc. In this embodiment, the substrate mounting table is also circular or elliptical, and the substrate mounted on the substrate mounting table is also circular.

[0056] The processing container 20 is divided into two spaces, upper and lower, by the metal window 30. The antenna room A as the upper space is formed by the upper chamber 13, and the processing chamber S as the lower space is formed by the lower chamber 17. In the processing container 20, a rectangular ring-shaped support frame 14 is arranged at a position that becomes a boundary between the upper chamber 13 and the lower chamber 17 so as to protrude toward the inner side of the processing container 20, and the metal window 30 is installed on the support frame 14.

[0057] The upper chamber 13 forming the antenna chamber A is formed by the side wall 11 and the top plate 12, and is formed entirely of metal such as aluminum or aluminum alloy.

[0058] The lower chamber 17 having the processing chamber S therein is formed by the side wall 15 and the bottom plate 16 , and is formed as a whole of a metal such as aluminum or an aluminum alloy. The side wall 15 is grounded via a grounding wire 21 .

[0059] The support frame 14 is formed of conductive metal such as aluminum or aluminum alloy, and may also be called a metal frame.

[0060] A rectangular annular (endless) sealing groove 22 is formed at the upper end of the side wall 15 of the lower chamber 17, and a sealing component 23 such as an O-ring is embedded in the sealing groove 22. The abutting surface of the support frame 14 holds the sealing component 23, thereby forming a sealing structure between the lower chamber 17 and the support frame 14.

[0061] A delivery port 15a for delivering the substrate G to and from the lower chamber 17 is provided on the side wall 15 of the lower chamber 17, and the delivery port 15a is configured to be openable and closable by a gate 24. A conveying chamber (not shown) having a conveying mechanism built therein is adjacent to the lower chamber 17, and the gate 24 is controlled to be opened and closed, and the substrate G is delivered through the delivery port 15a by the conveying mechanism.

[0062] In addition, a plurality of exhaust ports 16a are provided on the bottom plate 16 of the lower chamber 17. The side wall 15 of the processing container 20 that accommodates the substrate stage 70 in the lower chamber 17 is formed into a square cylindrical shape. In other words, the processing container 20 has a horizontal cross-section that is formed into a rectangular shape at least at the position of the lower chamber 17 that accommodates the substrate stage 70. In addition, when viewed from above, the substrate stage 70 is formed into a rectangular shape. In other words, the horizontal cross-section of the substrate stage 70 is formed into a rectangular shape. A plurality of exhaust ports 16a are arranged on the bottom plate 16 of the processing container 20 in a manner that surrounds the substrate stage 70. In other words, the exhaust ports 16a are arranged at a position that is outside the substrate stage 70 and inside the side wall 15 of the processing container 20 (lower chamber 17) when viewed from above.

[0063] Each exhaust port 16a is connected to an exhaust device 300. In addition, a pressure gauge (not shown) is provided at an appropriate position of the lower chamber 17, and monitoring information of the pressure gauge is sent to the control unit 90.

[0064] The substrate mounting table 70 includes an electrostatic chuck 71 , a heating plate 72 , and a cooling plate 73 . The electrostatic chuck 71 has a mounting surface for holding the substrate G on its upper surface, and includes a base material 711 , a dielectric layer 712 , and an adsorption electrode 713 .

[0065] The top view shape of the substrate 711 is rectangular, and includes a plane size of the same degree as the substrate G placed on the substrate mounting table 70. The length of the long side of the substrate 711 can be set to about 1800 mm to 3400 mm, and the length of the short side can be set to about 1500 mm to 3000 mm. With respect to the plane size, the thickness of the substrate 711 can be, for example, about 50 mm to 100 mm.

[0066] The heating plate 72 is disposed below the substrate 711 of the electrostatic chuck 71 . The cooling plate 73 is disposed below the heating plate 72 .

[0067] A box-shaped susceptor 78 made of an insulating material and having a step portion inside is fixed to the bottom plate 16 of the lower chamber 17 , and the substrate mounting table 70 is mounted on the step portion of the susceptor 78 .

[0068] On the upper surface of the substrate 711, i.e., the upper surface 711a of the substrate, there are: a dielectric coating formed by spraying ceramics such as aluminum oxide and yttrium oxide, i.e., a dielectric layer 712 (for example, a ceramic sprayed coating); and an adsorption electrode 713 (conductive layer) formed by tungsten, molybdenum, etc., which is buried inside the dielectric layer 712 and has an electrostatic adsorption function.

[0069] The adsorption electrode 713 is connected to the DC power supply 85 via the power supply line 84. When the switch (not shown) inserted in the power supply line 84 is turned on by the control unit 90, a DC voltage is applied to the adsorption electrode 713 from the DC power supply 85, thereby generating a Coulomb force. By this Coulomb force, the substrate G is electrostatically adsorbed on the upper surface of the electrostatic chuck 71, and is held in a state of being placed on the substrate upper surface 711a through the dielectric layer 712. The upper surface of the substrate 711, that is, the substrate upper surface 711a, is a mounting surface for the electrostatic chuck 71 to mount the substrate G, and is also a mounting surface for the substrate mounting table 70 to mount the substrate G.

[0070] A heat medium flow path 73a is provided on the cooling plate 73 constituting the substrate mounting table 70 so as to meander over the entire area of ​​the rectangular plane. A supply pipe 73b for supplying heat medium to the heat medium flow path 73a and a return pipe 73c for discharging the heat medium having been heated by flowing through the heat medium flow path 73a are connected at both ends of the heat medium flow path 73a.

[0071] like Figure 1 As shown in FIG. 1 , the feed flow path 87 and the return flow path 88 are connected to the feed pipe 73b and the return pipe 73c, respectively, and the feed flow path 87 and the return flow path 88 are connected to the cooler 86. The cooler 86 includes a main body for controlling the temperature of the heat medium and the release flow rate, and a pump for pressurizing the heat medium (both are not shown). In addition, a refrigerant is used as the heat medium, and the refrigerant is Galden (registered trademark), Fluorinert (registered trademark), etc.

[0072] In addition, the heating plate 72 is provided with a heating element 72a (see the following description). Figure 2 The heating element 72a is, for example, a heater as a resistor, and can be formed of tungsten, molybdenum, or a compound of any of these metals and aluminum oxide, titanium, or the like.

[0073] A temperature sensor such as a thermocouple (not shown) is disposed on the substrate 711, and monitoring information of the temperature sensor is sent to the control unit 90 at any time. Based on the sent monitoring information, the control unit 90 performs temperature control of the substrate 711 and the substrate G. More specifically, the control unit 90 adjusts the electric power supplied to the heating element 72a, and the temperature and flow rate of the heat medium supplied from the cooler 86 to the feed flow path 87. In addition, the heating amount of the heating element 72a is adjusted, and the heat medium with temperature and flow rate adjusted is circulated in the heat medium flow path 73a, thereby performing temperature control of the substrate mounting table 70.

[0074] A step portion is formed by the outer periphery of the electrostatic chuck 71 and the upper surface of the base 78, and a rectangular frame-shaped focus ring 79 is placed on the step portion. When the focus ring 79 is provided on the step portion, the upper surface of the focus ring 79 is set slightly lower than the upper surface of the electrostatic chuck 71. The focus ring 79 is formed of ceramics such as alumina or quartz. In addition, since the upper surface of the electrostatic chuck 71 is made slightly smaller than the substrate G, the peripheral edge of the substrate G slightly extends from the peripheral edge of the electrostatic chuck 71 and reaches the inner edge of the focus ring 79, and is separated from the upper surface of the focus ring 79 to form a small gap.

[0075] The power supply component 80 is connected to the lower surface of the heating plate 72 through an opening that passes through from the lower surface to the upper surface of the cooling plate 73. In addition, the base material 711 of the electrostatic chuck 71, the heating plate 72 and the cooling plate 73 are arranged in an electrically conductive manner. A power supply line 81 is connected to the lower end of the power supply component 80, and the power supply line 81 is connected to a high-frequency power supply 83 as a bias power supply via a matching device 82 for impedance matching. By applying a high-frequency electric power of, for example, 3.2MHz to the substrate mounting table 70 from the high-frequency power supply 83, an RF bias is generated, and ions generated by the high-frequency power supply 56, which is a generating source for plasma generation described below, are attracted to the substrate G, and, for example, a film forming process can be performed on the substrate G. In this way, the substrate mounting table 70 forms a bias electrode for generating an RF bias on which the substrate G is mounted. At this time, the portion of the lower chamber 17 that becomes the ground potential functions as a counter electrode of the bias electrode, forming a return circuit for the high-frequency electric power. In addition, the metal window 30 can also be configured as a part of the return circuit for the high-frequency electric power. The metal window 30 is formed of a plurality of divided metal windows 31. The number of divided metal windows 31 forming the metal window 30 can be set to various numbers such as 12 or 24.

[0076] The divided metal window 31 has a conductor plate 32 and a shower plate 34. The divided metal window 31 also serves as a processing gas release portion for releasing processing gas into the interior of the processing chamber S. The conductor plate 32 and the shower plate 34 are both formed of a non-magnetic and conductive metal that is also corrosion-resistant or a metal that has been subjected to a corrosion-resistant surface treatment, i.e., aluminum, aluminum alloy, stainless steel, etc. The corrosion-resistant surface treatment is, for example, anodizing treatment, ceramic spraying, etc. In addition, a plasma-resistant coating achieved by anodizing treatment or ceramic spraying may be applied to the exposed surface 34a of the shower plate 34 facing the processing chamber S.

[0077] Each divided metal window 31 constituting the metal window 30 is suspended on the ceiling 12 of the upper chamber 13 by a plurality of suspension members (not shown). A spacer (not shown) formed by an insulating member is arranged above each divided metal window 31, and a high-frequency antenna (inductive coupling antenna) 51 is arranged at a distance from the conductor plate 32 by means of the spacer. The high-frequency antenna 51 contributes to the generation of plasma, and is formed by winding an antenna wire formed by a metal with good conductivity such as copper into a ring or spiral shape. For example, a ring-shaped antenna wire may also be arranged in multiples. The high-frequency antenna 51 is arranged on the upper surface of the divided metal window 31, and is therefore suspended from the ceiling 12 via the divided metal window 31. The high-frequency antenna 51 is arranged in the upper part of the processing container 20, the antenna chamber A of the upper chamber 13.

[0078] A gas diffusion groove 33 is formed on the lower surface of the conductor plate 32, and a through hole 32b is provided to connect the gas diffusion groove 33 with the upper surface 32a of the conductor plate. At least a portion of the gas introduction pipe 52 is buried in the through hole 32b. A plurality of gas release holes 35 are provided in the shower plate 34 to connect the gas diffusion groove 33 of the conductor plate 32 and the processing chamber S. The shower plate 34 is fastened to the lower surface of the area outside the gas diffusion groove 33 of the conductor plate 32 by metal screws (not shown). In addition, the gas diffusion groove may also be provided on the upper surface of the shower plate. In addition, the shape of the recessed portion constituting the gas diffusion groove 33 is not limited to the so-called long strip shape, and may also be a recessed portion extending in a planar shape, and the shape of the recessed portion is not limited as long as a space for gas diffusion is formed.

[0079] Each divided metal window 31 is electrically insulated from the support frame 14 and adjacent divided metal windows 31 by an insulating member 37. Here, the insulating member 37 is formed of a fluororesin such as PTFE (Polytetrafluoroethylene). The end surface 37a of the insulating member 37 facing the processing chamber S is coplanar with the exposed surface 34a of the shower plate 34 facing the processing chamber S, and the insulating covering member 38 covers the end surface 37a of the insulating member 37 and is arranged across the exposed surface 34a of the adjacent shower plate 34. The covering member 38 is formed of ceramics such as alumina.

[0080] The insulating member 37 is formed of a resin such as PTFE which has high insulating properties and is lightweight, but the plasma resistance of the resin is not high compared to ceramics such as alumina. In addition, it is difficult to perform a plasma-resistant coating on the surface of the resin by anodizing or ceramic spraying. Therefore, in the plasma processing apparatus 100, the end surface 37a of the insulating member 37 on the processing chamber S side is covered with a covering member 38 made of, for example, ceramic, so as to protect the insulating member 37 from the influence of plasma. Each insulating member 37 which insulates the support frame 14 from the split metal window 31 and the adjacent split metal windows 31 from each other is covered by the covering member 38.

[0081] A power supply member 53 extending upward from the upper chamber 13 is connected to the high frequency antenna 51 . A power supply line 54 is connected to the upper end of the power supply member 53 . The power supply line 54 is connected to a high frequency power source 56 via a matching device 55 for impedance matching.

[0082] By applying high frequency electric power of, for example, 13.56 MHz to the high frequency antenna 51 from the high frequency power supply 56, an induced electric field is formed in the lower chamber 17. The induced electric field converts the processing gas supplied from the shower plate 34 to the processing chamber S into plasma to generate inductively coupled plasma, and ions in the plasma are supplied to the substrate G.

[0083] The high frequency power source 56 is a generation source for generating plasma, and the high frequency power source 83 connected to the substrate mounting table 70 becomes a bias source for attracting the generated ions. In this way, by using two high frequency power sources to generate plasma and control ion energy, plasma generation and ion energy control can be performed independently, which can improve the degree of freedom of the process.

[0084] like Figure 1 As shown, the gas introduction pipes 52 of the divided metal windows 31 are gathered at one point in the antenna chamber A, and the gas introduction pipes 52 extending upward pass through the supply port 12a opened in the top plate 12 of the upper chamber 13. In addition, the gas introduction pipes 52 are connected to the processing gas supply source 64 via the gas supply pipe 61 airtightly connected thereto.

[0085] An on-off valve 62 and a flow controller 63 such as a mass flow controller are inserted in the middle of the gas supply pipe 61. The gas supply pipe 61, the on-off valve 62, the flow controller 63 and the process gas supply source 64 form a process gas supply unit 60. In addition, the gas supply pipe 61 is branched in the middle, and each branch pipe is connected to the on-off valve and the flow controller, and the process gas supply source corresponding to the type of the process gas (not shown).

[0086] During the plasma treatment, the process gas supplied from the process gas supply unit 60 is supplied to the gas diffusion grooves 33 of the conductor plate 32 of each divided metal window 31 via the gas supply pipe 61 and the gas introduction pipe 52. Then, the gas is released from each gas diffusion groove 33 into the process chamber S via the gas release holes 35 of each shower plate 34.

[0087] Thus, the plasma processing apparatus 100 includes a plasma generating unit for generating a processing plasma in order to perform substrate processing (film forming processing, etching processing, etc.) on the substrate G. The plasma generating unit includes at least a metal window 30 and a high-frequency antenna 51. A high-frequency power supply 56 supplies high-frequency electric power to the high-frequency antenna 51, and a processing gas supply unit 60 supplies a processing gas to the processing chamber S via the divided metal window 31 (processing gas release unit). The plasma generating unit forms an induced electric field in the processing chamber S, and generates plasma of the processing gas supplied to the processing chamber S using the induced electric field.

[0088] The control unit 90 controls the operation of each component of the plasma processing device 100, such as the cooler 86, the high-frequency power supply 56, the high-frequency power supply 83, the processing gas supply unit 60, and the exhaust device 300 based on the monitoring information sent from the pressure gauge. The control unit 90 includes a CPU (Central Processing Unit), a ROM (Read Only Memory), and a RAM (Random Access Memory). The CPU performs a predetermined process according to a plan (process plan) stored in a storage area in the RAM and the ROM. The control information of the plasma processing device 100 for the process conditions is set in the plan. The control information includes, for example, a gas flow rate, a pressure in the processing container 20, a temperature in the processing container 20, a temperature of the substrate 711, a processing time, and the like.

[0089] The recipe and the program used by the control unit 90 may be stored in a hard disk, an optical disk, a magneto-optical disk, etc. In addition, the recipe and the like may be stored in a portable computer-readable storage medium such as a CD-ROM, a DVD, a memory card, etc. and set in the control unit 90 and read out. The control unit 90 also includes input devices such as a keyboard and a mouse for inputting commands, display devices such as a display for visually displaying the operating status of the plasma processing device 100, and output devices such as a printer, etc., which are user interfaces.

[0090] Here, use Figure 2 and Figure 3 , further illustrating the substrate mounting table 70. Figure 2 This is an example of a schematic cross-sectional view of the substrate mounting table 70 according to the first embodiment.

[0091] The substrate mounting table 70 includes an electrostatic chuck 71 , a heating plate 72 , and a cooling plate 73 .

[0092] The electrostatic chuck 71 has a mounting surface for the substrate G on its upper surface, and includes a base material 711, a dielectric layer 712, and an adsorption electrode 713 (see Figure 1 .exist Figure 2 (not shown in the figure) A dielectric layer 712 is formed on the upper surface of the substrate 711, and an adsorption electrode 713 is provided inside the dielectric layer 712. The dielectric layer 712 carries and holds the substrate G on its upper surface.

[0093] The substrate 711 is conductive and is electrically connected to the power supply member 80 (see Figure 1 ) high-frequency electric power is applied via the heating plate 72. In addition, the substrate 711 is preferably made of a material with a small thermal expansion difference with the dielectric layer 712 at the process temperature (for example, 250°C). The substrate 711 is made of, for example, stainless steel. As a result, the thermal expansion difference between the substrate 711 and the dielectric layer 712 is reduced, and in a high-temperature process (for example, 250°C), the dielectric layer 712 is prevented from peeling off from the substrate 711 due to the thermal expansion difference between the substrate 711 and the dielectric layer 712. In other words, the generation of contaminants such as particles, insulation breakdown, and abnormal discharge caused by fragments of the peeled dielectric layer 712 is prevented. In addition, the surface of the substrate 711 made of stainless steel is preferably covered with a Ni plating layer 714 for preventing the substrate 711 from being corroded by plasma, processing gas, etc.

[0094] The heating plate 72 is preferably made of a material having good electrical conductivity and thermal conductivity. The heating plate 72 is made of, for example, aluminum or an aluminum alloy. In addition, the heating plate 72 has a heating element 72a inside. The heating element 72a generates heat by supplying electric power from an external power supply (not shown), thereby heating the heating plate 72. The upper surface of the heating plate 72 abuts against the lower surface of the substrate 711, and the heating element 72a generates heat, thereby transferring heat from the heating plate 72 to the electrostatic chuck 71, and heating the substrate G placed on the electrostatic chuck 71. In addition, when the heat of the plasma generated in the processing chamber S is input to the substrate G, it is transferred to the heating plate 72 via the electrostatic chuck 71.

[0095] The cooling plate 73 is preferably made of a material having good electrical conductivity and thermal conductivity. The cooling plate 73 is made of, for example, aluminum or an aluminum alloy. In addition, the cooling plate 73 has a heat medium flow path 73a inside. Figure 1 ) The heat medium whose temperature is adjusted to a predetermined temperature (e.g., 100° C.) is supplied to the heat medium flow path 73a via the supply pipe 73b. The heat medium discharged from the heat medium flow path 73a is returned to the cooler 86 (see Figure 1 )cycle.

[0096] Figure 3This is an example of a partially enlarged schematic cross-sectional view of the substrate mounting table 70 according to the first embodiment.

[0097] Here, a support member 74 is arranged between the heating plate 72 and the cooling plate 73. The heating plate 72 is supported on the cooling plate 73 via the support member 74. The support member 74 may be arranged, for example, in a manner such that a recess is formed on the upper surface of the cooling plate 73. The support member 74 is preferably made of a material having electrical conductivity and lower thermal conductivity than the heating plate 72 and the cooling plate 73. The support member 74 is made of, for example, stainless steel. A plurality of support members 74 are provided continuously or at intervals in the circumferential direction on the outer peripheral side of the heating plate 72 and the cooling plate 73, so that the heating plate 72 and the cooling plate 73 are not in direct contact. On the other hand, in the portion where the heating plate 72 and the cooling plate 73 are in indirect contact via the support member 74, the thermal conductivity of the support member 74 is low, so the amount of heat transfer is reduced. Thus, the heat transfer between the heating plate 72 and the cooling plate 73 via the support member 74 is suppressed. As a result, the amount of heat transfer between the heating plate 72 and the cooling plate 73 can be suppressed to be small, and the heating plate 72 can be reliably supported by the cooling plate 73.

[0098] A gap space 75 is formed between the cooling plate 73 and the heating plate 72. In addition, a sealing member 76a (second sealing member) is disposed between the cooling plate 73 and the heating plate 72 at the outer periphery surrounding the gap space 75. The gap space 75 is sealed between the cooling plate 73 and the heating plate 72 and the processing chamber S by the sealing member 76a. The cooling plate 73 and the heating plate 72 sandwich the sealing member 76a, but do not directly contact. As with the support member 74, the sealing member 76a is indirectly contacted via the sealing member 76a. The sealing member 76a may also be disposed on the outside of the support member 74, for example.

[0099] In addition, the gap space 75 can also be provided with a power supply member 80 (see Figure 1 ) is inserted through the opening of the cooling plate 73, and is connected to the space below the cooling plate 73 (the space surrounded by the lower surface of the cooling plate 73, the inner peripheral surface of the base 78, and the upper surface of the bottom plate 16). In addition, a sealing member (not shown) may be arranged between the gap space 75 and the space below the cooling plate 73 to seal the gap space 75.

[0100] In addition, if Figure 3 As shown, the surface of the heating plate 72 that faces the cooling plate 73 is set as the first surface S1. The surface of the cooling plate 73 that faces the heating plate 72 is set as the second surface S2. There is a gap space 75 extending in the direction along the first surface S1 and the second surface S2 between the cooling plate 73 and the heating plate 72. The distance between the first surface S1 and the second surface S2 is greater than 2 mm and less than 10 mm.

[0101] In addition, Figure 3In the description, the case where a recess is formed on the upper surface (second surface S2) of the cooling plate 73 to form a gap space 75 between the cooling plate 73 and the heating plate 72 is taken as an example, but the invention is not limited thereto. Alternatively, a structure where a recess is formed on the lower surface (first surface S1) of the heating plate 72 to form a gap space 75 between the cooling plate 73 and the heating plate 72 may be employed. Alternatively, a structure where a recess is formed on both the upper surface (first surface S1) of the cooling plate 73 and the lower surface (second surface S2) of the heating plate 72 to form a gap space 75 between the cooling plate 73 and the heating plate 72 may be employed.

[0102] The heating plate 72 is anodized on the first surface S1 exposed to the gap space 75, and has an aluminum oxide coating 721. In other words, the heating plate 72 has an aluminum oxide coating 721 at least on the wall surface exposed to the gap space 75. Figure 2 and Figure 3 As shown, the aluminum oxide film 721 can also be seen on the entire surface of the heating plate 72.

[0103] The cooling plate 73 is anodized on the second surface S2 exposed in the gap space 75, and has an aluminum oxide coating 731. In other words, the cooling plate 73 has an aluminum oxide coating 731 at least on the wall surface exposed in the gap space 75. Figure 2 and Figure 3 As shown, the cooling plate 73 may have an aluminum oxide coating 731 on the entire surface.

[0104] In addition, the substrate mounting table 70 is described as an example in which the aluminum oxide coating is provided on both the first surface S1 of the heating plate 72 and the second surface S2 of the cooling plate 73, but the invention is not limited thereto. The substrate mounting table 70 may also be configured such that the aluminum oxide coating is provided on at least one of the first surface S1 of the cooling plate 73 and the second surface of the heating plate 72.

[0105] The cooling plate 73 is supported by a base 78. A sealing member 76b is disposed between the cooling plate 73 and the base 78. In addition, a sealing member 76c is disposed between the base 78 and the bottom plate 16. The space under the cooling plate 73 is sealed between the cooling plate 73 and the processing chamber S by the sealing members 76b and 76c. In addition, the space under the cooling plate 73 may also be connected to the outside of the processing container 20 to form an atmospheric atmosphere.

[0106] In addition, sealing members 77 (first sealing members) are provided at various connection parts of the supply pipe 73b and the return pipe 73c through which the heat supply medium flows. That is, the sealing member 77 is a member for preventing the heat supply medium from leaking to the outside, and is in contact with the heat supply medium and is cooled to a temperature equivalent to that of the heat supply medium.

[0107] The gap space 75 may be filled with a vacuum atmosphere. Alternatively, the gap space 75 may be filled with an air atmosphere. Alternatively, the gap space 75 may be filled with a heat transfer gas (eg, He gas).

[0108] Here, an example of processing of the substrate G by the plasma processing apparatus 100 will be described.

[0109] First, the substrate G is placed on the substrate placement table 70 and electrostatically attracted by the electrostatic chuck 71 .

[0110] Next, a step of heating the electrostatic chuck 71 using the heating plate 72 is performed. Here, the control unit 90 controls a power source (not shown) that supplies electric power to the heating element 72a based on the detected temperature of a temperature sensor (not shown) such as a thermocouple provided on the substrate 711. As a result, the temperatures of the heating plate 72, the electrostatic chuck 71 including the substrate 711, and the substrate G placed on the electrostatic chuck 71 are adjusted to the desired temperatures (e.g., 250°C). On the other hand, a heat medium having a temperature lower than the desired temperature (e.g., 100°C) flows through the heat medium flow path 73a of the cooling plate 73, and the temperature of the cooling plate 73 also becomes a low temperature (e.g., 100°C).

[0111] Next, a step of dissipating heat from the electrostatic chuck 71 by using the cooling plate 73 through heat exchange via the gap space 75 is performed. Here, the control unit 90 controls the plasma processing device 100 to perform film-forming plasma processing on the substrate G. When the plasma processing is performed on the substrate G, plasma is generated in the processing chamber S, and heat from the plasma is input to the substrate G and the substrate mounting table 70. The heat from the plasma is transferred to the heating plate 72 via the substrate G and the electrostatic chuck 71. On the other hand, the heating plate 72 itself also generates heat using the heating element 72a. The heat input from the plasma and the heat generated by the heat generated by the heating plate 72 are thermally radiated from the first surface S1 of the heating plate 72 to the gap space 75. In addition, the radiant heat radiated from the heating plate 72 to the gap space 75 is thermally absorbed by the second surface S2 of the cooling plate 73. At this time, the alumina coating covering the first surface S1 and the second surface S2 has a high heat radiation rate and absorptivity as described later. That is, by forming the aluminum oxide film 721 on the first surface S1, heat can be efficiently dissipated, and by forming the aluminum oxide film 731 on the second surface S2, heat can be efficiently absorbed. Therefore, in the gap space 75, heat is transferred by efficient heat radiation from the first surface S1 to the second surface S2. Thus, heat is dissipated in the cooling plate 73 to the heat medium flowing in the heat medium flow path 73a. In this way, the substrate G and the electrostatic chuck 71 are heat-dissipated by the cooling plate 73 through heat exchange via the gap space 75.

[0112] Then, the temperature of the substrate G is adjusted via the electrostatic chuck 71 . Here, the control unit 90 controls a power source (not shown) for supplying electric power to the heating element 72 a based on the detected temperature of a temperature sensor (not shown) such as a thermocouple provided on the substrate 711 .

[0113] Through these steps, the temperature of the substrate G during substrate processing is controlled to a desired temperature.

[0114] Thus, according to Figure 2 and Figure 3 The substrate mounting table 70 shown can process the substrate G by a high temperature process (for example, 250° C.) In addition, when the heat of the plasma is input to the substrate G and the substrate mounting table 70 , it can be dissipated to the heat medium.

[0115] In addition, the temperature of the heat medium flowing through the feed pipe 73b and the return pipe 73c can be set to a temperature (e.g., 100°C) lower than the temperature (e.g., 250°C) of the high-temperature process of the substrate G. Thus, the seal member 77 provided in the feed pipe 73b and the return pipe 73c can be prevented from being degraded by heat.

[0116] Here, use Figure 4 , thermal radiation and heat absorption using an aluminum oxide coating are described. Figure 4 This is an example of a table showing the relationship between various anodizing treatments and emissivity.

[0117] exist Figure 4 In the table, in No. 1 to 15, various anodizing treatments were applied to the substrate of the aluminum alloy (A5052). The anodizing treatments of No. 1 to 15 are treatments in which aluminum oxide is formed by different methods. No. 16 as the first comparative example represents an untreated (before anodizing treatment) substrate of the aluminum alloy (A5052). No. 17 to 19 as the second to fourth comparative examples, the substrate of the aluminum alloy (A5052) shown in No. 16 was subjected to sandblasting treatment to change the surface roughness (substrate surface processing quality). For No. 1 to 19, the substrate surface processing quality (arithmetic mean roughness Ra), treatment, film thickness of the aluminum oxide coating, substrate temperature when measuring the emissivity, and emissivity are respectively represented.

[0118] like Figure 4 As shown, the emissivity of the untreated substrate shown in No. 16 is 0.38. In contrast, in the various anodizing treatments and film thicknesses shown in Nos. 1 to 15, the emissivity has a high value close to 1. That is, the emissivity is improved by providing an aluminum oxide film on the surface of the substrate.

[0119] Here, in the various anodizing treatments shown in No. 1 to 15, the value of the substrate surface processing quality (arithmetic mean roughness Ra) is greater than the untreated state shown in No. 16. That is, the surface area is increased. Therefore, in No. 17 to No. 19, the surface area of ​​the substrate is increased by sandblasting.

[0120] In the various blasting processes shown in Nos. 17 to 19, no increase in the emissivity was observed.

[0121] In this way, regardless of the method of anodizing, by providing an aluminum oxide coating on the surface of the substrate, the emissivity is improved. That is, by providing an aluminum oxide coating 721 on the surface of the heating plate 72, the radiant heat from the heating plate 72 to the gap space 75 can be increased. In addition, in general, when the emissivity of heat is high, the heat absorption rate also becomes high, so an increase in heat radiation means an increase in heat absorption. Therefore, the absorption of radiant heat from the gap space 75 to the cooling plate 73 can also be increased.

[0122] Thus, the heat of plasma can be appropriately transferred from the heating plate 72 to the cooling plate 73 via the gap space 75 .

[0123] Here, a substrate mounting table 70C of a reference example will be described. Figure 5 It is an example of a schematic cross-sectional view of a substrate mounting table 70C of a reference example.

[0124] In the substrate mounting table 70C of the reference example, the heating plate 72 is not provided, and a cooling plate 73 is provided directly under the base material 711 .

[0125] Here, the case where the substrate G is processed by a high temperature process (e.g., 250° C.) in the substrate mounting table 70C of the reference example is described as an example. A high temperature heat medium (e.g., 250° C.) is circulated in the heat medium flow path 73a of the cooling plate 73. Therefore, the sealing member 77 and the sealing member 76b are also exposed to high temperature. Therefore, there is a possibility that the sealing member 77 and the sealing member 76b may deteriorate due to heat, thereby increasing the frequency of replacement.

[0126] In contrast, Figure 2 and Figure 3 In the substrate mounting table 70 shown, even when the substrate G is processed by a high temperature process (e.g., 250° C.), a heat medium having a temperature lower than the desired process temperature (e.g., 100° C.) flows through the heat medium flow path 73a of the cooling plate 73, and the cooling plate 73 can be maintained at a low temperature. Therefore, it is possible to suppress the sealing member 77 and the sealing member 76b from being deteriorated by heat.

[0127] Figure 6 This is an example of a schematic cross-sectional view of a substrate mounting table 70A according to the second embodiment.

[0128] like Figure 6 As shown, the substrate mounting table 70A includes a gas passage 89a connected to the gap space 75, opening and closing valves 89b1 and 89b2 provided in the gas passage 89a, a pressure sensor 89c provided in the gas passage 89a for detecting the pressure of the gap space 75, a gas supply source 89d1, and an exhaust device 89d2. Figure 6 The figure is omitted, but in the opening of the cooling plate 73 through which the power supply component 80 is inserted (see Figure 1 ) is arranged around the gap space 75 and the space under the cooling plate 73 is sealed. Thus, the gap space 75 is formed in such a manner that the upper surface is defined by the first surface S1, the lower surface is defined by the second surface S2, the outer peripheral side is defined by the sealing member 76a, and the inner peripheral side is defined by the sealing member (not shown).

[0129] By opening the on-off valve 89b1, the gas is filled from the gas supply source 89d1 through the gas passage 89a into the gap space 75. The gas filled in the gap space 75 may be the atmosphere or a heat transfer gas (such as He gas, Ar gas, etc.). In addition, by opening the on-off valve 89b, the gas in the gap space 75 is exhausted by the exhaust device 89d2 through the gas passage 89a.

[0130] In this way, the substrate mounting table 70A can control the pressure (filling amount) of the gas in the gap space 75. In addition, the pressure (filling amount) of the heat transfer gas in the gap space 75 can be controlled. Thus, the heat transfer by thermal convection through the heat transfer gas can be controlled. That is, the amount of heat transferred from the heating plate 72 to the cooling plate 73 can be controlled by the heat transfer gas together with the heat transfer by radiation.

[0131] Here, an example of processing of the substrate G performed by the plasma processing apparatus 100 including the substrate mounting table 70A according to the second embodiment will be described.

[0132] First, the step of filling the gap space 75 with air or heat transfer gas is performed. That is, the heat transfer characteristics of the heating plate 72 and the cooling plate 73 are adjusted. Thus, for example, the heat transfer characteristics of the heating plate 72 and the cooling plate 73 can be adjusted according to the process of substrate processing. In addition, in a substrate processing system including a plurality of plasma processing apparatuses 100, the mechanical difference in the heat transfer characteristics of the heating plate 72 and the cooling plate 73 can be adjusted.

[0133] The plasma processing apparatus 100 is described above, but the present invention is not limited to the embodiments, etc. Various modifications and improvements can be made within the scope of the subject matter of the present invention. In addition, the film forming process is described as a substrate treatment, but it is not limited to this, and it can also be applied to the case where the substrate mounting table becomes high temperature in etching treatment, ashing treatment, etc.

Claims

1. A substrate mounting table, characterized in that: The substrate mounting table is disposed inside a processing container for processing a substrate and is used to mount the substrate, and includes: An electrostatic chuck comprising a substrate, wherein the substrate is provided with a dielectric layer having an adsorption electrode built therein on a mounting surface on which the substrate is mounted; a heating plate connected to the lower side of the electrostatic chuck and made of aluminum or an aluminum alloy; and A cooling plate, which is connected to the bottom of the heating plate and is made of aluminum or aluminum alloy, The surface of the heating plate opposite to the cooling plate is a first surface, The surface of the cooling plate opposite to the heating plate is the second surface, There is a gap space between the heating plate and the cooling plate extending in a direction along the first surface and the second surface, An aluminum oxide film is provided on at least one or both of the first surface exposed in the gap space and the second surface exposed in the gap space.

2. The substrate mounting table according to claim 1, wherein: In the gap space, a distance between the first surface and the second surface is greater than or equal to 2 mm and less than or equal to 10 mm.

3. The substrate mounting table according to claim 1, wherein: The heating plate has a heating element, The cooling plate has a heat medium flow path through which a heat medium flows.

4. The substrate mounting table according to claim 3, wherein: A first sealing member is disposed on the supply pipe and the return pipe connected to the heat medium flow path.

5. The substrate mounting table according to claim 1, wherein: The heating plate is supported on the cooling plate via a supporting member.

6. The substrate mounting table according to claim 1, wherein: A second sealing member is disposed between the heating plate and the cooling plate surrounding the gap space.

7. The substrate mounting table according to claim 6, wherein: The gap space is filled with atmospheric air or heat transfer gas.

8. A substrate processing device for processing a substrate, characterized in that: include: a processing container in which the substrate is processed; and a substrate mounting table, which is arranged inside the processing container and is used to mount the substrate, The substrate mounting platform comprises: An electrostatic chuck comprising a substrate, wherein the substrate is provided with a dielectric layer having an adsorption electrode built therein on a mounting surface on which the substrate is mounted; a heating plate connected to the lower side of the electrostatic chuck and made of aluminum or an aluminum alloy; and A cooling plate, which is connected to the bottom of the heating plate and is made of aluminum or aluminum alloy, The surface of the heating plate opposite to the cooling plate is a first surface, The surface of the cooling plate opposite to the heating plate is the second surface, There is a gap space between the heating plate and the cooling plate extending in a direction along the first surface and the second surface, An aluminum oxide film is provided on at least one or both of the first surface exposed in the gap space and the second surface exposed in the gap space.

9. The substrate processing device according to claim 8, characterized in that: The heating plate has a heating element, The cooling plate has a heat medium flow path through which the heat medium flows. A first sealing member is disposed on the supply pipe and the return pipe connected to the heat medium flow path.

10. A substrate processing method for processing a substrate in a processing container, characterized in that: A substrate mounting table for mounting the substrate is provided inside the processing container. The substrate mounting platform comprises: An electrostatic chuck comprising a substrate, wherein the substrate is provided with a dielectric layer having an adsorption electrode built therein on a mounting surface on which the substrate is mounted; a heating plate connected to the lower side of the electrostatic chuck and made of aluminum or an aluminum alloy; and A cooling plate, which is connected to the bottom of the heating plate and is made of aluminum or aluminum alloy, The surface of the heating plate opposite to the cooling plate is a first surface, and the surface of the cooling plate opposite to the heating plate is a second surface. There is a gap space extending in a direction along the first surface and the second surface between the heating plate and the cooling plate, and at least one or both of the first surface exposed in the gap space and the second surface exposed in the gap space have an aluminum oxide coating. The substrate processing method comprises: The step of heating the electrostatic chuck by using the heating plate: The step of dissipating heat from the electrostatic chuck via the heating plate using the cooling plate by heat exchange via the gap space; and The step of adjusting the temperature of the substrate via the electrostatic chuck.

11. The substrate processing method according to claim 10, characterized in that: The method comprises the step of filling the gap space with atmospheric air or a heat transfer gas.

12. The substrate processing method according to claim 10, characterized in that: The processing forms a film on the substrate.

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