Preparation method and application of one-dimensional and two-dimensional transition metal disulfide hybrid array structure

Abstract

The invention relates to the field of semiconductor materials, in particular to a preparation method and application of a one-dimensional and two-dimensional transition metal disulfide hybrid array structure. The method comprises the following steps: providing a substrate, and carrying out preset pattern array processing on the substrate by adopting a photoetching process to obtain a substrate comprising a pattern array structure with a first size and a second size; forming a transition metal oxide thin film to obtain a substrate comprising a transition metal oxide thin film array structure with a first size and a second size; and reacting with sulfur / selenium / tellurium steam to obtain a one-dimensional and two-dimensional transition metal disulfide mixed array structure with a first size and a second size. The controllable preparation of the one-dimensional and two-dimensional transition metal disulfide hybrid array structure is realized by combining a photoetching process with a thin film deposition process, and the method is a one-step growth method, is simple to operate, avoids multiple thermal growth processes, ensures the high quality of the hybrid array structure, and has a wide application prospect in integrated circuits.

Description

Technical Field

[0001] The present invention relates to the field of semiconductor materials, and in particular to a preparation method and application of a one-dimensional and two-dimensional transition metal dichalcogenide mixed array structure. Background Art

[0002] Transition metal dichalcogenides are very promising semiconductor materials that can be used in the field of electronic and optoelectronic devices. Transition metal dichalcogenides have two main forms, one is the common two-dimensional form, and the other is the one-dimensional nanoribbon form. Compared with the two-dimensional form, the one-dimensional nanoribbon form of transition metal dichalcogenides has some unique electronic and optoelectronic properties, such as quantum Coulomb oscillation effect and chiral polarization effect.

[0003] It is now possible to prepare high-quality one-dimensional or two-dimensional transition metal dichalcogenides by chemical vapor phase method. For one-dimensional transition metal dichalcogenides, for example, it has been reported that MoS2 one-dimensional nanoribbons (Nickel particle-enabled width-controlled growth of bilayer molybdenum disulfide nanoribbons; DOI: 10.1126 / sciadv.abk1892) are grown by using nickel nanoparticles as catalysts and MoO2 and S as reaction sources, or by using nanoparticles such as Na2Mo2O7 as transition metal sources to react with sulfur vapor to grow MoS2 and WS2 one-dimensional nanoribbons (Vapour-liquid-solid growth of monolayer MoS2 nanoribbons; Nature Materials, 2018, 17, 535-542; DOI: 10.1038 / s41563-018-0055-z and WS2 ribbon arrays with defined chirality and coherent polarity;Science,2024,384,1100-1104;DOI:10.1126 / science.adn9476). For two-dimensional transition metal dichalcogenides, for example, it has been reported that two-dimensional MoS2 is grown by sulfurization of MoO3 thin film (Chemical synthesis of two-dimensional atomic crystals, heterostructures and superlattices;Chem.Soc.Rev.,2018,47,3129-3151;DOI:10.1039 / c7cs00887b). The above traditional methods all achieve the preparation of monolayers of one-dimensional or two-dimensional transition metal dichalcogenides, and do not involve array structures.

[0004] Traditional methods make it difficult to simultaneously achieve controllable mixed growth of one-dimensional and two-dimensional transition metal dichalcogenides on the same substrate. Therefore, the existing technology still needs to be improved and developed. Summary of the invention

[0005] In view of the above-mentioned deficiencies in the prior art, the object of the present invention is to provide a method for preparing a one-dimensional and two-dimensional transition metal dichalcogenide mixed array structure and its application, aiming to solve the problem that the existing methods are difficult to simultaneously achieve the controllable mixed growth of one-dimensional and two-dimensional transition metal dichalcogenides on the same substrate.

[0006] The technical solution of the present invention is as follows:

[0007] A first aspect of the present invention provides a method for preparing a one-dimensional and two-dimensional transition metal dichalcogenide mixed array structure, comprising:

[0008] Step 1, providing a substrate, and performing a preset pattern array processing on the substrate by using a photolithography process to obtain a substrate including a pattern array structure of a first size and a second size, wherein the first size is 10nm-100nm, and the second size is 10μm-100cm;

[0009] Step 2: forming a transition metal oxide thin film on the substrate processed in step 1 to obtain a substrate including a transition metal oxide thin film array structure of a first size and a second size;

[0010] Step 3: Under an inert atmosphere carrier, sulfur vapor or selenium vapor or tellurium vapor is reacted with a transition metal oxide film to obtain a one-dimensional and two-dimensional transition metal dichalcogenide mixed array structure, wherein the one-dimensional and two-dimensional transition metal dichalcogenides have a first size and a second size, respectively.

[0011] The second aspect of the present invention provides a one-dimensional and two-dimensional transition metal dichalcogenide mixed array structure prepared by the preparation method of the present invention.

[0012] The third aspect of the present invention provides an application of a one-dimensional and two-dimensional transition metal dichalcogenide mixed array structure prepared by the preparation method of the present invention in an integrated circuit.

[0013] Beneficial effects: The present invention utilizes a photolithography process combined with a transition metal oxide thin film deposition process to achieve controllable preparation of one-dimensional and two-dimensional transition metal dichalcogenide mixed array structures. The method of the present invention is a one-step growth method, which is simple to operate and can avoid multiple thermal growth processes, thereby ensuring the high quality of the one-dimensional and two-dimensional transition metal dichalcogenide mixed array structures and having broad application prospects in integrated circuits. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] Figure 1 The present invention provides a schematic flow chart of a method for preparing a one-dimensional and two-dimensional transition metal dichalcogenide mixed array structure.

[0015] Figure 2 The present invention provides a schematic diagram of the process flow for preparing the one-dimensional and two-dimensional transition metal dichalcogenide mixed array structures. DETAILED DESCRIPTION

[0016] The present invention provides a method for preparing a one-dimensional and two-dimensional transition metal dichalcogenide mixed array structure and its application. In order to make the purpose, technical solution and effect of the present invention clearer and more specific, the present invention is further described in detail below. It should be understood that the specific embodiments described herein are only used to explain the present invention and are not used to limit the present invention.

[0017] According to one embodiment of the present invention, a method for preparing a one-dimensional and two-dimensional transition metal dichalcogenide mixed array structure is provided, which comprises:

[0018] Step 1, providing a substrate, and performing a preset pattern array processing on the substrate by using a photolithography process to obtain a substrate including a pattern array structure of a first size and a second size, wherein the first size is 10nm-100nm, and the second size is 10μm-100cm;

[0019] Step 2: forming a transition metal oxide thin film on the substrate processed in step 1 to obtain a substrate including a transition metal oxide thin film array structure of a first size and a second size;

[0020] Step 3: Under an inert atmosphere carrier, sulfur vapor or selenium vapor or tellurium vapor is reacted with a transition metal oxide film to obtain a one-dimensional and two-dimensional transition metal dichalcogenide mixed array structure, wherein the one-dimensional and two-dimensional transition metal dichalcogenides have a first size and a second size, respectively.

[0021] The "substrate comprising a graphic array structure of a first size and a second size" in step one of the embodiment of the present invention is intended to indicate a graphic array structure comprising a first size and a second size on a substrate, where the first size represents a graphic with a width of 10nm-100nm, and the second size represents a graphic with a width of 10μm-100cm.

[0022] In the embodiment of the present invention, the "substrate comprising a transition metal oxide thin film array structure of a first size and a second size" in step 2 is intended to indicate a transition metal oxide thin film array structure comprising a first size and a second size on a substrate, where the first size represents a transition metal oxide thin film with a width of 10nm-100nm, and the second size represents a transition metal oxide thin film with a width of 10μm-100cm. After forming the "substrate comprising a pattern array structure of a first size and a second size" in step 1, a film is plated on the substrate to form a transition metal oxide thin film, and a transition metal oxide thin film with a first size is formed at a pattern with a first size, and a transition metal oxide thin film with a second size is formed at a pattern with a second size, that is, a transition metal oxide thin film array structure comprising a first size and a second size is formed on the substrate.

[0023] In the embodiment of the present invention, the "one-dimensional and two-dimensional transition metal dichalcogenides have a first size and a second size, respectively" in step 3 is intended to indicate that the one-dimensional transition metal dichalcogenide has a first size and the two-dimensional transition metal dichalcogenide has a second size, where the first size indicates a one-dimensional transition metal dichalcogenide with a width of 10nm-100nm, and the second size indicates a two-dimensional transition metal dichalcogenide with a width of 10μm-100cm. After forming the "substrate comprising a transition metal oxide thin film array structure of a first size and a second size" in step 2, sulfur vapor or selenium vapor or tellurium vapor is reacted with the transition metal oxide thin film, and a one-dimensional transition metal dichalcogenide with a first size is formed at the transition metal oxide thin film with a first size, and a two-dimensional transition metal dichalcogenide with a second size is formed at the transition metal oxide thin film with a second size, so that a mixed array structure of one-dimensional and two-dimensional transition metal dichalcogenides is obtained.

[0024] In the embodiment of the present invention, a preset pattern array structure is first formed on a substrate by using a photolithography process, and a transition metal oxide thin film array structure including a first size and a second size is formed on the substrate in combination with a transition metal oxide thin film deposition process, and then a one-dimensional and two-dimensional transition metal dichalcogenide mixed array structure is obtained by reacting with sulfur vapor or selenium vapor or tellurium vapor. Since the size, position, shape and type of the transition metal oxide can be precisely controlled by the photolithography process and the thin film deposition process, the size, position, shape and type of the grown one-dimensional and two-dimensional transition metal dichalcogenide can be precisely controlled, thereby realizing the controllable preparation of the one-dimensional and two-dimensional transition metal dichalcogenide mixed array structure.

[0025] The key innovation points of the embodiments of the present invention are at least: (1) utilizing the size effect of transition metal oxide sources to simultaneously prepare one-dimensional and two-dimensional transition metal dichalcogenide mixed structures; utilizing a transition metal oxide source of 10nm-100nm (first size) to react with sulfur / selenium / tellurium vapor to prepare one-dimensional transition metal dichalcogenide; utilizing a transition metal oxide source of 10μm-100cm (second size) to react with sulfur / selenium / tellurium vapor to prepare two-dimensional transition metal dichalcogenide. (2) utilizing a patterning process such as photoresist and photolithography combined with transition metal oxide thin film deposition to define a transition metal oxide array structure of controllable size, shape, position and type on a substrate to achieve controllable growth of one-dimensional and two-dimensional transition metal dichalcogenide mixed structures.

[0026] The one-dimensional transition metal dichalcogenide in the embodiment of the present invention has a quantum Coulomb oscillation effect and a chiral polarization effect, and the two-dimensional transition metal dichalcogenide has a high mobility. Therefore, the unique electronic and optoelectronic properties of one-dimensional and two-dimensional transition metal dichalcogenides can be utilized simultaneously to realize integrated circuits with more complex functions.

[0027] The embodiments of the present invention simultaneously realize the controllable preparation of one-dimensional and two-dimensional transition metal dichalcogenide mixed array structures on a substrate. Compared with the prior art that forms a two-dimensional sulfide / selenide array structure on a substrate alone, it can form a complex one-dimensional and two-dimensional network structure, and at the same time utilize the unique electronic and optoelectronic properties of one-dimensional and two-dimensional transition metal dichalcogenides to realize integrated circuits with more complex functions.

[0028] The one-dimensional and two-dimensional transition metal dichalcogenide mixed array structures in the embodiments of the present invention can be designed according to specific needs. First, the substrate is processed into a preset pattern array using a photolithography process, and then combined with a transition metal oxide thin film deposition process, a transition metal oxide thin film with a pattern array of different sizes, positions, shapes, types, etc. is defined according to needs. Finally, it is reacted in situ with sulfur vapor or selenium vapor or tellurium vapor to obtain the target one-dimensional and two-dimensional transition metal dichalcogenide mixed array structure.

[0029] In the embodiment of the present invention, the material (such as sapphire or silicon oxide substrate) and shape of the substrate are conventional substrates in the prior art and are not limited here.

[0030] In an embodiment of the present invention, a preset graphic array structure can be prepared on a substrate using photoresist (PMMA or Su8, etc.) and a photolithography process according to specific needs. The specific size, position, shape, etc. of the photolithography pattern can be set according to actual needs, and are not limited here. After the transition metal oxide film is deposited, the photoresist on the substrate needs to be removed to form a target transition metal oxide film array structure including a first size and a second size. The use of photoresist and photolithography process to perform graphic array processing on the substrate, and the subsequent removal of the photoresist are both conventional techniques in the art and are not limited here.

[0031] According to one embodiment of the present invention, the first size is 50nm-100nm, for example, it can be 50nm, 60nm, 70nm, 80nm, 90nm, 100nm, etc.

[0032] According to one embodiment of the present invention, the second size is 10 μm-1 cm, for example, it may be 10 μm, 100 μm, 500 μm, 1000 μm, 1500 μm, 2000 μm, 5000 μm, 1 cm, etc.

[0033] According to an embodiment of the present invention, the second size is 50 μm-100 μm, for example, 50 μm, 60 μm, 70 μm, 80 μm, 90 μm, 100 μm, etc.

[0034] According to one embodiment of the present invention, the one-dimensional and two-dimensional transition metal dichalcogenides are one or more of MoS2, MoSe2, MoTe2, WS2, WSe2 and WTe2.

[0035] According to an embodiment of the present invention, the transition metal oxide film is a Na2Mo2O7 film or a Na2WO4 film. The use of the Na2Mo2O7 film or the Na2WO4 film can promote the reaction.

[0036] According to an embodiment of the present invention, the thickness of the transition metal oxide film is 50 nm-500 nm. Within this thickness range, sufficient reaction sources can be provided.

[0037] According to one embodiment of the present invention, the sulfur vapor or selenium vapor or tellurium vapor is reacted with the transition metal oxide film at a reaction temperature of 700° C.-1000° C. and a reaction time of 0.5 h-2 h. Within the reaction temperature and reaction time range, the reaction can be fully carried out.

[0038] According to one embodiment of the present invention, the sulfur vapor or selenium vapor or tellurium vapor is disposed upstream of the substrate, wherein the inert atmosphere carrier allows the transition metal oxide film to react with the sulfur vapor or selenium vapor or tellurium vapor.

[0039] In this embodiment, sulfur vapor or selenium vapor or tellurium vapor is generated by placing a corresponding sulfur source or selenium source or tellurium source upstream of the substrate. For example, a sulfur source (generally sulfur powder) is placed upstream of the substrate, the sulfur source is heated to form sulfur vapor, and then an inert atmosphere carrier is introduced to carry the sulfur vapor to the transition metal oxide film for reaction.

[0040] According to one embodiment of the present invention, the flow rate of the inert atmosphere carrier is 100 SCCM-500 SCCM. Within this flow rate range, the reaction can be fully carried out.

[0041] According to one embodiment of the present invention, the transition metal oxide film is formed by thermal evaporation technology in step 2, wherein the vacuum degree used is less than or equal to 1×10 -2 Pa.

[0042] According to one embodiment of the present invention, there is provided a one-dimensional and two-dimensional transition metal dichalcogenide mixed array structure prepared by the preparation method of the present invention.

[0043] According to one embodiment of the present invention, there is provided an application of a one-dimensional and two-dimensional transition metal dichalcogenide mixed array structure prepared by the preparation method of the present invention in an integrated circuit.

[0044] Combination Figure 1 and Figure 2 As shown, the present invention provides a method for preparing a one-dimensional and two-dimensional transition metal dichalcogenide mixed array structure, comprising:

[0045] Providing a substrate; spin-coating a photoresist such as PMMA / Su8; performing a preset pattern arraying process on the substrate by a photolithography process to obtain a substrate having a pattern array structure of a first size and a second size; depositing a transition metal oxide film; obtaining a transition metal oxide film array structure having a first size and a second size by a lift-off film stripping process; and reacting with sulfur / selenium / tellurium vapor to obtain a one-dimensional and two-dimensional transition metal dichalcogenide mixed array structure, that is, obtaining the one-dimensional and two-dimensional transition metal dichalcogenide mixed array structure of the present invention.

[0046] The present invention will be further described below by means of specific examples.

[0047] Example 1

[0048] This embodiment provides a method for preparing a one-dimensional and two-dimensional transition metal dichalcogenide MoS2 mixed array structure, which is as follows:

[0049] The SiO2 / Si (285nm SiO2) substrate was ultrasonically cleaned with acetone, anhydrous ethanol, and deionized water, respectively, and the cleaning time was 5 minutes. After drying with a nitrogen gun, the residual water and oxygen on the surface of the substrate were removed by plasma cleaning. On the substrate, a 300nm thick PMMA photoresist was applied by spin coating. The substrate was pre-baked to evaporate the solvent in the photoresist, and the film was dried and fixed. The preset array pattern was exposed on the substrate by an electron beam exposure machine, and a patterned array substrate was obtained after development, wherein the array pattern contained rectangles with a first size of 100nm and a second size of 100μm. A thermal evaporation coating machine was used in a temperature less than 10 -2 Pa, a transition metal oxide Na2Mo2O7 film with a thickness of 50nm is deposited. The photoresist is removed by a lift-off process to obtain a transition metal oxide Na2Mo2O7 film array structure on the substrate. The substrate is placed in a low-pressure chemical vapor deposition system, 30g of sulfur powder is placed upstream as a sulfur source, and the sulfur source temperature is 150°C to form sulfur vapor. Argon gas with a flow rate of 300SCCM is introduced into the system as a carrier gas to bring the sulfur vapor to the transition metal oxide film for reaction. The substrate is heated to 900°C and the reaction time is 30 minutes. After the reaction is completed, the temperature is naturally lowered, and finally a one-dimensional and two-dimensional transition metal dichalcogenide MoS2 mixed array structure is obtained on the substrate.

[0050] Example 2

[0051] This embodiment provides a method for preparing a one-dimensional and two-dimensional transition metal dichalcogenide MoSe2 mixed array structure, which is as follows:

[0052] The SiO2 / Si (285nm SiO2) substrate was ultrasonically cleaned with acetone, anhydrous ethanol, and deionized water, respectively, and the cleaning time was 5 minutes. After drying with a nitrogen gun, the residual water and oxygen on the surface of the substrate were removed by plasma cleaning. On the substrate, a 300nm thick PMMA photoresist was applied by spin coating. The substrate was pre-baked to evaporate the solvent in the photoresist, and the film was dried and fixed. The preset array pattern was exposed on the substrate by an electron beam exposure machine, and a patterned array substrate was obtained after development, wherein the array pattern contained rectangles with a first size of 100nm and a second size of 100μm. A thermal evaporation coating machine was used in a temperature less than 10 -2 Pa, a transition metal oxide Na2Mo2O7 film with a thickness of 50nm is deposited. The photoresist is removed by a lift-off process to obtain a transition metal oxide Na2Mo2O7 film array structure on the substrate. The substrate is placed in a low-pressure chemical vapor deposition system, 30g of selenium powder is placed upstream as a selenium source, and the temperature of the selenium source is 200°C to form selenium vapor. Argon gas with a flow rate of 300SCCM is introduced into the system as a carrier gas to bring the selenium vapor to the transition metal oxide film for reaction. The substrate is heated to 900°C and the reaction time is 30 minutes. After the reaction is completed, the temperature is naturally lowered, and finally a one-dimensional and two-dimensional transition metal dichalcogenide MoSe2 mixed array structure is obtained on the substrate.

[0053] Example 3

[0054] This embodiment provides a method for preparing a one-dimensional and two-dimensional transition metal dichalcogenide WS2 mixed array structure, which is as follows:

[0055] The SiO2 / Si (285nm SiO2) substrate was ultrasonically cleaned with acetone, anhydrous ethanol, and deionized water, respectively, and the cleaning time was 5 minutes. After drying with a nitrogen gun, the residual water and oxygen on the surface of the substrate were removed by plasma cleaning. On the substrate, a 300nm thick PMMA photoresist was applied by spin coating. The substrate was pre-baked to evaporate the solvent in the photoresist, and the film was dried and fixed. The preset array pattern was exposed on the substrate by an electron beam exposure machine, and a patterned array substrate was obtained after development, wherein the array pattern contained rectangles with a first size of 100nm and a second size of 100μm. A thermal evaporation coating machine was used in a temperature less than 10 -2Pa, a transition metal oxide Na2WO4 film with a thickness of 50nm is deposited. The photoresist is removed by a lift-off process to obtain a transition metal oxide Na2WO4 film array structure on the substrate. The substrate is placed in a low-pressure chemical vapor deposition system, 30g of sulfur powder is placed upstream as a sulfur source, and the sulfur source temperature is 150°C to form sulfur vapor. Argon gas with a flow rate of 300SCCM is introduced into the system as a carrier gas to bring the sulfur vapor to the transition metal oxide film for reaction. The substrate is heated to 900°C and the reaction time is 30 minutes. After the reaction is completed, the temperature is naturally lowered, and finally a one-dimensional and two-dimensional transition metal dichalcogenide WS2 mixed array structure is obtained on the substrate.

[0056] Example 4

[0057] This embodiment provides a method for preparing a one-dimensional and two-dimensional transition metal dichalcogenide WSe2 mixed array structure, which is as follows:

[0058] The SiO2 / Si (285nm SiO2) substrate was ultrasonically cleaned with acetone, anhydrous ethanol, and deionized water, respectively, and the cleaning time was 5 minutes. After drying with a nitrogen gun, the residual water and oxygen on the surface of the substrate were removed by plasma cleaning. On the substrate, a 300nm thick PMMA photoresist was applied by spin coating. The substrate was pre-baked to evaporate the solvent in the photoresist, and the film was dried and fixed. The preset array pattern was exposed on the substrate by an electron beam exposure machine, and a patterned array substrate was obtained after development, wherein the array pattern contained rectangles with a first size of 100nm and a second size of 100μm. A thermal evaporation coating machine was used in a temperature less than 10 -2 Pa, a transition metal oxide Na2WO4 film with a thickness of 50nm is deposited. The photoresist is removed by a lift-off process to obtain a transition metal oxide Na2WO4 film array structure on the substrate. The substrate is placed in a low-pressure chemical vapor deposition system, 30g of selenium powder is placed upstream as a selenium source, and the temperature of the selenium source is 200°C to form selenium vapor. Argon gas with a flow rate of 300SCCM is introduced into the system as a carrier gas to bring the selenium vapor to the transition metal oxide film for reaction. The substrate is heated to 900°C and the reaction time is 30 minutes. After the reaction is completed, the temperature is naturally lowered, and finally a one-dimensional and two-dimensional transition metal dichalcogenide WSe2 mixed array structure is obtained on the substrate.

[0059] It should be understood that the application of the present invention is not limited to the above examples. For ordinary technicians in this field, improvements or changes can be made based on the above description. All these improvements and changes should fall within the scope of protection of the claims attached to the present invention.

Claims

1. A method for preparing a one-dimensional and two-dimensional transition metal dichalcogenide mixed array structure, characterized in that: include: Step 1, providing a substrate, and performing a preset pattern array processing on the substrate by using a photolithography process to obtain a substrate including a pattern array structure of a first size and a second size, wherein the first size is 10nm-100nm, and the second size is 10μm-100cm; Step 2: forming a transition metal oxide thin film on the substrate processed in step 1 to obtain a substrate including a transition metal oxide thin film array structure of a first size and a second size; Step 3: Under an inert atmosphere carrier, sulfur vapor or selenium vapor or tellurium vapor is reacted with a transition metal oxide film to obtain a one-dimensional and two-dimensional transition metal dichalcogenide mixed array structure, wherein the one-dimensional and two-dimensional transition metal dichalcogenides have a first size and a second size, respectively.

2. The method for preparing a one-dimensional and two-dimensional transition metal dichalcogenide mixed array structure according to claim 1, characterized in that: The one-dimensional and two-dimensional transition metal dichalcogenides are one or more of MoS2, MoSe2, MoTe2, WS2, WSe2 and WTe2.

3. The method for preparing a one-dimensional and two-dimensional transition metal dichalcogenide mixed array structure according to claim 1, characterized in that: The transition metal oxide film is a Na2Mo2O7 film or a Na2WO4 film.

4. The method for preparing a one-dimensional and two-dimensional transition metal dichalcogenide mixed array structure according to claim 1, characterized in that: The thickness of the transition metal oxide film is 50nm-500nm.

5. The method for preparing a one-dimensional and two-dimensional transition metal dichalcogenide mixed array structure according to claim 1, characterized in that: The sulfur vapor or selenium vapor or tellurium vapor is reacted with the transition metal oxide film, wherein the reaction temperature is 700° C.-1000° C. and the reaction time is 0.5 h-5 h.

6. The method for preparing a one-dimensional and two-dimensional transition metal dichalcogenide mixed array structure according to claim 1, characterized in that: The sulfur vapor, selenium vapor, or tellurium vapor is disposed upstream of the substrate, wherein the inert atmosphere carrier allows the sulfur vapor, selenium vapor, or tellurium vapor to react with the transition metal oxide film.

7. The method for preparing a one-dimensional and two-dimensional transition metal dichalcogenide mixed array structure according to claim 6, characterized in that: The flow rate of the inert atmosphere carrier is 100 SCCM-500 SCCM.

8. The method for preparing a one-dimensional and two-dimensional transition metal dichalcogenide mixed array structure according to claim 1, characterized in that: The transition metal oxide film is formed by thermal evaporation technology in step 2, wherein the vacuum degree used is less than or equal to 1×10 -2 Pa.

9. A one-dimensional and two-dimensional transition metal dichalcogenide mixed array structure prepared by the preparation method according to any one of claims 1 to 8.

10. Application of a one-dimensional and two-dimensional transition metal dichalcogenide mixed array structure prepared by the preparation method according to any one of claims 1 to 8 in an integrated circuit.

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