IGBT chip capable of automatically monitoring junction temperature and preparation method thereof

Abstract

The invention belongs to the technical field of power semiconductor devices, and provides an IGBT (Insulated Gate Bipolar Translator) chip capable of automatically monitoring junction temperature and a preparation method thereof. A junction temperature detection area is arranged on an IGBT chip by adopting a material (hereinafter referred to as a force-electricity material) which generates an electric signal under stress: if pressure is applied to the force-electricity material, a potential difference is generated, otherwise, mechanical stress is generated by applying voltage, namely, the force-electricity material can convert the force into the electric signal; wherein the source of the pressure is as follows: when the IGBT chip works, the temperature can rise, thermal expansion can cause the force-electric material to be stressed due to different thermal expansion coefficients among materials of the IGBT chip, a potential difference is further generated at two poles of the force-electric material, and finally, the temperature monitoring of the IGBT chip is realized. The force-electric material in the junction temperature detection area can sense temperature change generated by force interaction of the whole IGBT chip, and compared with an existing heat conduction mode, the detection result is more accurate.

Description

Technical Field

[0001] The present invention relates to the technical field of power semiconductor devices, and in particular to an IGBT chip capable of automatically monitoring junction temperature and a preparation method thereof. Background Art

[0002] In current chip technology, when the chip is packaged, the junction temperature of the chip is generally detected through optical measurement methods (such as infrared thermal imaging) and physical contact methods (such as thermocouple method). Whether it is thermal infrared imaging or thermocouple method, it is necessary to destroy the package. At the same time, the thermocouple method also has the problem of slow response. After the package is destroyed, the chip cannot be used subsequently. It is of great significance to study how to realize real-time monitoring of chip junction temperature during the use of the chip.

[0003] The related prior art introduces a temperature sensing area into the IGBT chip, but the temperature sensing area is implemented based on heat conduction. There is still a temperature difference between the edge and the center of the chip, resulting in inaccurate temperature monitoring. Summary of the invention

[0004] In view of this, the object of the present invention is to provide an IGBT chip capable of automatically monitoring junction temperature and a method for preparing the same. The IGBT chip of the present invention is provided with a junction temperature detection area, and the junction temperature detection area has a more accurate temperature detection result.

[0005] In order to achieve the above-mentioned object of the invention, the present invention provides the following technical solutions:

[0006] The present invention provides an IGBT chip capable of automatically monitoring junction temperature, comprising a collector metal, a P+ collector region, a buffer layer and a semiconductor layer stacked in sequence;

[0007] The semiconductor layer is divided into a plurality of cell regions, a plurality of terminal regions and a junction temperature detection region;

[0008] The junction temperature detection area includes, from bottom to top, a semiconductor layer base layer, a force-electric signal conversion layer, a dielectric layer and a metal layer, or includes, from bottom to top, a semiconductor layer base layer, a dielectric layer, a force-electric signal conversion layer and a metal layer;

[0009] The metal layer includes a first voltage monitoring metal and a second voltage monitoring metal;

[0010] The first voltage monitoring metal and the second voltage monitoring metal are used to obtain the potential difference generated by the power-electricity signal conversion layer.

[0011] Preferably, the material of the electromechanical signal conversion layer is aluminum nitride, quartz crystal, lithium gallate, lithium germanate or titanium germanate.

[0012] Preferably, the electromechanical signal conversion layer has a thickness of 0.5 to 1 mm.

[0013] Preferably, the dielectric layer is made of one or more of borophosphosilicate glass, phosphosilicate glass and silicate glass.

[0014] Preferably, the thickness of the dielectric layer is 0.5-3 mm.

[0015] Preferably, the material of the first voltage monitoring metal is aluminum, copper, gold or silver, and the thickness of the first voltage monitoring metal is 5 to 10 μm; the material of the second voltage monitoring metal is aluminum, copper, gold or silver, and the thickness of the second voltage monitoring metal is 5 to 10 μm.

[0016] Preferably, in the vertical structure, the junction temperature detection area is located between two cell areas, or between the cell area and the terminal area;

[0017] In the lateral structure, the junction temperature detection area is located in the middle or edge of the layout of the IGBT chip capable of automatically monitoring the junction temperature.

[0018] Preferably, each cell region includes, from bottom to top, a semiconductor layer base layer, an oxidized shielding oxygen layer, a dielectric layer and a metal layer; the metal layer includes an emitter metal and a gate metal;

[0019] The semiconductor layer base layer includes an N-drift region, a cell body region and a source region, a P+ region is arranged in the source region; the source region is led out from the emitter metal through the P+ region and a metal hole, and the metal hole is in corresponding contact with the P+ region; a plurality of grooves are also arranged in the source region, a gate structure is arranged inside each groove, and the gate structure is led out from the gate metal through the metal hole.

[0020] Preferably, each terminal region comprises, from bottom to top, a semiconductor layer base layer, an oxidized shielding oxygen layer, a dielectric layer and a metal layer; the metal layer comprises a terminal metal;

[0021] The semiconductor layer base layer includes an N-drift region, a cut-off region and a plurality of terminal ring regions, wherein the cut-off region and the terminal ring region are not connected; and the terminal ring region is led out from the terminal metal through a metal hole.

[0022] The present invention also provides a method for preparing an IGBT chip capable of automatically monitoring junction temperature as described in the above technical solution, comprising the following steps:

[0023] (1) depositing a force-electric signal conversion layer on one side of the semiconductor layer;

[0024] (2) etching the electromechanical signal conversion layer to etch out a cell area window and a terminal area window;

[0025] (3) performing a first boron implantation and a second boron implantation on the cell region window and the terminal region window respectively, to form a terminal ring region of the terminal region and a cell body region of the cell region;

[0026] (4) respectively implanting phosphorus into the terminal ring region and the cell body region to form a cutoff region of the terminal region and a source region of the cell region;

[0027] (5) After the cell area window and the terminal area window are oxidized and shielded from oxygen, the source area is trench etched and gate oxide is oxidized;

[0028] (6) Deposition and reflow of dielectric layer over the entire area;

[0029] (7) Performing metal hole etching on the required area to form a metal hole, and then performing high-concentration boron implantation on the metal hole in the window area of ​​the cell area to form a P+ area; finally, performing metal layer deposition on the entire area;

[0030] (8) sequentially preparing a buffer layer, a P+ collector region and a collector metal on the other side of the semiconductor layer to obtain the IGBT chip capable of automatically monitoring the junction temperature;

[0031] or,

[0032] (1) dividing a junction temperature detection area window, a cell area window, and a terminal area window on one side of the semiconductor layer;

[0033] (2) performing a first boron implantation and a second boron implantation on the cell region window and the terminal region window respectively, to form a terminal ring region of the terminal region and a cell body region of the cell region;

[0034] (3) respectively implanting phosphorus into the terminal ring region and the cell body region to form a cutoff region of the terminal region and a source region of the cell region;

[0035] (4) After the cell area window and the terminal area window are oxidized and shielded from oxygen, the source area is trenched and gate oxide is oxidized;

[0036] (5) Deposition and reflow of dielectric layer over the entire area;

[0037] (6) depositing a force-electric signal conversion layer in the junction temperature detection area window;

[0038] (7) Performing metal hole etching on the required area to form a metal hole, and then performing high-concentration boron implantation on the metal hole in the window area of ​​the cell area to form a P+ area; finally, performing metal layer deposition on the entire area;

[0039] (8) A buffer layer, a P+ collector region and a collector metal are sequentially prepared on the other side of the semiconductor layer to obtain the IGBT chip capable of automatically monitoring the junction temperature.

[0040] The invention provides an IGBT chip capable of automatically monitoring junction temperature.

[0041] The present invention sets a junction temperature detection area based on the piezoelectric effect of the material that generates electrical signals when subjected to force: if pressure is applied to the material that generates electrical signals when subjected to force, it will generate a potential difference, and vice versa, mechanical stress will be generated, that is, the material that generates electrical signals when subjected to force can convert force into electrical signals; wherein, the source of pressure: when the IGBT chip is working, the temperature will rise. Due to the different thermal expansion coefficients between the materials of the IGBT chip, thermal expansion will cause the material that generates electrical signals when subjected to force to be subjected to force, and then a potential difference will be generated between the two poles of the material that generates electrical signals when subjected to force, and finally the temperature monitoring of the IGBT chip will be realized. The material that generates electrical signals when subjected to force in the junction temperature detection area of ​​the present invention can sense the temperature changes caused by the interaction of forces of the entire IGBT chip, and the detection results are more accurate than the existing heat conduction method. At the same time, the heat in the IGBT chip will directly cause pressure changes, and the mechanical to electrochemical conversion can be realized directly through the material that generates electrical signals when subjected to force in the junction temperature detection area, avoiding the temperature hysteresis of the existing heat conduction method. BRIEF DESCRIPTION OF THE DRAWINGS

[0042] Figure 1 A cross-sectional view of an IGBT chip capable of automatically monitoring junction temperature provided by the present invention;

[0043] Figure 2 A cross-sectional view of an IGBT chip capable of automatically monitoring junction temperature provided by the present invention;

[0044] Figure 3 The relative setting position of the junction temperature detection area in the IGBT chip capable of automatically monitoring the junction temperature provided by the present invention;

[0045] Figure 4 It is the top view of the cell area;

[0046] Figure 5 This is a top view of the terminal area;

[0047] Figure 6 A flow chart of the preparation of an IGBT chip capable of automatically monitoring junction temperature provided by the present invention. DETAILED DESCRIPTION

[0048] In the present invention, N- represents a low concentration of phosphorus, N+ represents a high concentration of phosphorus, and P+ represents a high concentration of boron.

[0049] Figure 1 A cross-sectional view of an IGBT chip capable of automatically monitoring junction temperature provided by the present invention, Figure 2 The cross-sectional view of the IGBT chip capable of automatically monitoring the junction temperature provided by the present invention. Figure 1 and Figure 2The structure of the IGBT chip capable of automatically monitoring the junction temperature of the present invention is described in detail.

[0050] The present invention provides an IGBT chip capable of automatically monitoring junction temperature, comprising a collector metal, a P+ collector region, a buffer layer and a semiconductor layer stacked in sequence;

[0051] The semiconductor layer is divided into a plurality of cell regions, a plurality of terminal regions and a junction temperature detection region;

[0052] The junction temperature detection area includes, from bottom to top, a semiconductor layer base layer, a force-electric signal conversion layer, a dielectric layer and a metal layer, or includes, from bottom to top, a semiconductor layer base layer, a dielectric layer, a force-electric signal conversion layer and a metal layer;

[0053] The metal layer includes a first voltage monitoring metal and a second voltage monitoring metal;

[0054] The first voltage monitoring metal and the second voltage monitoring metal are used to obtain the potential difference generated by the power-electricity signal conversion layer.

[0055] In the present invention, unless otherwise specified, the raw materials used in the present invention are preferably commercially available products.

[0056] The IGBT chip capable of automatically monitoring junction temperature provided by the present invention includes a collector metal, and the material of the collector metal is preferably a first composite metal layer or a second composite metal layer; the first composite metal layer includes a nickel layer, a palladium layer and a gold layer stacked in sequence, the thickness of the nickel layer is 1 μm, the thickness of the palladium layer is 3 μm, the thickness of the gold layer is 8 μm, and the nickel layer is in contact with the semiconductor layer; the second composite metal layer includes an aluminum layer, a titanium layer, a nickel layer and a silver layer stacked in sequence, the thickness of the aluminum layer is 1 μm, the thickness of the titanium layer is 1 μm, the thickness of the nickel layer is 4 μm, the thickness of the silver layer is 8 μm, and the aluminum layer is in contact with the semiconductor layer.

[0057] The IGBT chip capable of automatically monitoring junction temperature provided by the present invention comprises a P+ collector region, and the thickness of the P+ collector region is preferably 5-10 μm.

[0058] The IGBT chip capable of automatically monitoring junction temperature provided by the present invention comprises a buffer layer, wherein the buffer layer is a silicon semiconductor layer, and the silicon semiconductor layer is a hydrogen-implanted silicon semiconductor layer or a phosphorus-implanted silicon semiconductor layer. The thickness of the hydrogen implanted in the hydrogen-implanted silicon semiconductor layer is preferably 30 μm; the thickness of the phosphorus implanted in the phosphorus-implanted silicon semiconductor layer is preferably 8 μm.

[0059] The IGBT chip capable of automatically monitoring junction temperature provided by the present invention comprises a semiconductor layer.

[0060] In the present invention, the semiconductor layer is divided into a plurality of cell regions, a plurality of terminal regions and a junction temperature detection region.

[0061] In the present invention, the junction temperature detection area includes a semiconductor layer base layer, a force and electric signal conversion layer, a dielectric layer and a metal layer from bottom to top, or includes a semiconductor layer base layer, a dielectric layer, a force and electric signal conversion layer and a metal layer from bottom to top. In the present invention, the material of the force and electric signal conversion layer is preferably aluminum nitride (AlN), quartz crystal, lithium gallate, lithium germanate or titanium germanate, and the thickness of the force and electric signal conversion layer is preferably 0.5 to 1 mm, specifically 0.5 mm, 0.6 mm, 0.7 mm, 0.8 mm, 0.9 mm or 1 mm. In the present invention, the material of the dielectric layer is preferably one or more of borophosphosilicate glass (BPSG), phosphosilicate glass (PSG) and silicon glass (USG). In the present invention, the thickness of the dielectric layer is preferably 0.5 to 3 mm, specifically 0.5 mm, 1.0 mm, 1.5 mm, 2.0 mm, 2.5 mm or 3.0 mm. In the present invention, the metal layer includes a first voltage monitoring metal and a second voltage monitoring metal; the first voltage monitoring metal and the second voltage monitoring metal are used to obtain the potential difference generated by the force-electricity signal conversion layer. In the present invention, the material of the first voltage monitoring metal is preferably aluminum, copper, gold or silver, and the thickness of the first voltage monitoring metal is preferably 5 to 10 μm; the material of the second voltage monitoring metal is preferably aluminum, copper, gold or silver, and the thickness of the second voltage monitoring metal is preferably 5 to 10 μm. In the present invention, the first voltage monitoring metal and the second voltage monitoring metal are preferably electrically connected to the force-electricity signal conversion layer through metal holes. In the present invention, the semiconductor layer base layer is also referred to as an N-drift layer, and is preferably a single crystal silicon layer.

[0062] In the present invention, in the vertical structure, the junction temperature detection area is preferably located between two cell areas, or preferably located between the cell area and the terminal area, specifically as follows Figure 1 and Figure 2 In the horizontal structure, the junction temperature detection area is preferably located in the middle or edge of the layout of the IGBT chip capable of automatically monitoring the junction temperature, as shown in FIG. Figure 3 shown.

[0063] In the present invention, each cell region preferably includes a semiconductor layer base layer, an oxidized shielding oxygen layer, a dielectric layer and a metal layer from bottom to top. In the present invention, the metal layer preferably includes an emitter metal and a gate metal. In the present invention, the semiconductor layer base layer preferably includes an N-drift region, a cell body region and a source region. In the present invention, the depth of the N-drift region is preferably 65 to 100 μm, the depth of the cell body region is preferably 3 to 4 μm, and the depth of the source region is preferably 1 to 2 μm. In the present invention, the cell body region is preferably a cell P body region. In the present invention, the source region is preferably an N+ source region, and a P+ region is preferably arranged in the region of the source region. The P+ region is to increase the hole concentration near the connecting electrode and reduce the on-resistance; the source region is preferably led out from the emitter metal through the P+ region and a metal hole (referred to as the first metal hole), and the first metal hole is in contact with the P+ region; the emitter metal is preferably aluminum, copper, gold or silver; the thickness of the emitter metal is preferably 5 to 10 μm. In the present invention, a plurality of grooves are preferably arranged in the source region, the depth of the grooves is preferably 5 to 6 μm, and the width is preferably 0.6 to 2.4 μm; a gate structure is preferably arranged inside each groove, and the gate structure is preferably led out from the gate metal through a metal hole, and the gate metal is preferably aluminum, copper, gold or silver, and the thickness of the gate metal is preferably 5 to 10 μm. Figure 4 It is a top view of the cell area. In the figure, the area covered entirely in black at the bottom is the source area, orange represents the groove, and blue represents the metal connection position. In the present invention, the material and thickness of the dielectric layer are preferably consistent with the material and thickness of the junction temperature detection area, which will not be repeated here.

[0064] In the present invention, each terminal region includes a semiconductor layer base layer, an oxidized shielding oxygen layer, a dielectric layer and a metal layer from bottom to top; the metal layer includes a terminal metal. In the present invention, each terminal region preferably includes an N-drift region, a cut-off region and a plurality of terminal ring regions. In the present invention, the cut-off region and the terminal ring region are not connected. In the present invention, the depth of the cut-off region is preferably 5 to 15 μm. In the present invention, the terminal ring region is preferably a terminal ring P region. In the present invention, the depth of the terminal ring region is preferably 5 to 10 μm. In the present invention, the terminal ring region is preferably led out by the terminal metal through a metal hole, and the terminal metal is preferably aluminum, copper, gold or silver; the thickness of the terminal metal is preferably 5 to 10 μm. Figure 5 This is a top view of the terminal area. In the figure, the black area represents the terminal ring area, the entire gray-black area represents the terminal area, and the blue line to the left edge is the cut-off area.

[0065] The present invention also provides a first method for preparing an IGBT chip capable of automatically monitoring junction temperature as described in the above technical solution, comprising the following steps:

[0066] (1) depositing a force-electric signal conversion layer on one side of the semiconductor layer;

[0067] (2) etching the electromechanical signal conversion layer to etch out a cell area window and a terminal area window;

[0068] (3) performing a first boron implantation and a second boron implantation on the cell region window and the terminal region window respectively, to form a terminal ring region of the terminal region and a cell body region of the cell region;

[0069] (4) respectively implanting phosphorus into the terminal ring region and the cell body region to form a cutoff region of the terminal region and a source region of the cell region;

[0070] (5) After the cell area window and the terminal area window are oxidized and shielded from oxygen, the source area is trench etched and gate oxide is oxidized;

[0071] (6) Deposition and reflow of dielectric layer over the entire area;

[0072] (7) Performing metal hole etching on the required area to form a metal hole, and then performing high-concentration boron implantation on the metal hole in the window area of ​​the cell area to form a P+ area; finally, performing metal layer deposition on the entire area;

[0073] (8) A buffer layer, a P+ collector region and a collector metal are sequentially prepared on the other side of the semiconductor layer to obtain the IGBT chip capable of automatically monitoring the junction temperature.

[0074] Figure 6 The first preparation method flow chart of the IGBT chip capable of automatically monitoring the junction temperature provided by the present invention is as follows: Figure 6 A first method for preparing an IGBT chip capable of automatically monitoring junction temperature is described in detail.

[0075] The invention deposits a force-electricity signal conversion layer on one side of the semiconductor layer.

[0076] In the present invention, the deposition method is preferably MOCVD. The present invention does not specifically limit the specific parameters of the MOCVD, as long as a force-electricity signal conversion layer of corresponding thickness can be prepared.

[0077] After depositing the force-electricity signal conversion layer, the present invention etches the force-electricity signal conversion layer to etch out the cell area window and the terminal area window.

[0078] The present invention does not specifically limit the etching parameters, and any etching method well known to those skilled in the art may be used.

[0079] After etching the cell region window and the terminal region window, the present invention performs a first boron implantation and a second boron implantation on the cell region window and the terminal region window respectively to form a terminal ring region of the terminal region and a cell body region of the cell region.

[0080] The present invention does not specifically limit the parameters of the first boron implantation and the second boron implantation, and operations well known to those skilled in the art may be adopted.

[0081] After forming the terminal ring region and the cell body region, the present invention performs phosphorus implantation on the terminal ring region and the cell body region respectively to form a terminal cutoff region of the terminal region and a source region of the cell region.

[0082] The present invention does not specifically limit the method and parameters of the phosphorus implantation, and operations familiar to those skilled in the art may be adopted.

[0083] After forming the source region of the cell region, the present invention performs oxidation shielding of oxygen on the cell region window and the terminal region window, and then performs trench etching and gate oxide oxidation on the source region.

[0084] The present invention does not specifically limit the parameters of the oxidation shielding oxygen, trench etching and gate oxide oxidation.

[0085] After the gate oxide is oxidized, the present invention performs dielectric layer deposition and reflow on the entire area.

[0086] The present invention does not specifically limit the deposition and reflow methods, and operations familiar to those skilled in the art may be used.

[0087] After reflow, the present invention performs metal hole etching on the required area to form metal holes, and then performs high-concentration boron injection on the metal holes in the window area of ​​the cell area to form a P+ area; finally, a metal layer is deposited on the entire area.

[0088] The present invention does not specifically limit the parameters of the metal hole etching, high concentration boron implantation and metal layer deposition.

[0089] After the metal layer is deposited, the present invention sequentially prepares a buffer layer, a P+ collector region and a collector metal on the other side of the semiconductor layer to obtain the IGBT chip capable of automatically monitoring the junction temperature.

[0090] The present invention does not specifically limit the preparation of the buffer layer, the P+ collector region and the collector metal.

[0091] The present invention also provides a second method for preparing the IGBT chip capable of automatically monitoring the junction temperature as described in the above technical solution, comprising the following steps:

[0092] (1) dividing a junction temperature detection area window, a cell area window, and a terminal area window on one side of the semiconductor layer;

[0093] (2) performing a first boron implantation and a second boron implantation on the cell region window and the terminal region window respectively, to form a terminal ring region of the terminal region and a cell body region of the cell region;

[0094] (3) respectively implanting phosphorus into the terminal ring region and the cell body region to form a cutoff region of the terminal region and a source region of the cell region;

[0095] (4) After the cell area window and the terminal area window are oxidized and shielded from oxygen, the source area is trenched and gate oxide is oxidized;

[0096] (5) Deposition and reflow of dielectric layer over the entire area;

[0097] (6) depositing a force-electric signal conversion layer in the junction temperature detection area window;

[0098] (7) Performing metal hole etching on the required area to form a metal hole, and then performing high-concentration boron implantation on the metal hole in the window area of ​​the cell area to form a P+ area; finally, performing metal layer deposition on the entire area;

[0099] (8) A buffer layer, a P+ collector region and a collector metal are sequentially prepared on the other side of the semiconductor layer to obtain the IGBT chip capable of automatically monitoring the junction temperature.

[0100] In the present invention, the parameters of the second preparation method are preferably the same as those of the first preparation method, which will not be described in detail herein.

[0101] The IGBT chip capable of automatically monitoring junction temperature and the preparation method thereof provided by the present invention are described in detail below in conjunction with the embodiments, but they should not be construed as limiting the protection scope of the present invention.

[0102] Example 1

[0103] 1. Selecting single crystal silicon as the semiconductor layer; cleaning the two side surfaces of the single crystal silicon semiconductor layer and setting it aside; depositing an aluminum nitride layer with a thickness of 1 to 2 μm on one side surface of the single crystal silicon semiconductor layer by MOCVD.

[0104] 2. Etch the aluminum nitride layer to obtain the cell area window and the terminal area window.

[0105] 3. Perform the first boron implantation and the second boron implantation on the cell region window and the terminal region window respectively to form the terminal ring region of the terminal region and the cell body region of the cell region.

[0106] 4. Phosphorus is implanted into the terminal ring region and the cell body region respectively to form a cutoff region of the terminal region and a source region of the cell region.

[0107] 5. After the cell area window and the terminal area window are oxidized and shielded from oxygen, the source area is trench etched and gate oxide is oxidized.

[0108] 6. Deposition and reflow of dielectric layer is performed on the entire area.

[0109] 7. Perform metal hole etching on the required area to form metal holes, and then perform high-concentration boron injection on the metal holes in the window area of ​​the cell area to form a P+ area; finally, perform metal layer deposition on the entire area;

[0110] 8. A buffer layer, a P+ collector region and a collector metal are sequentially prepared on the other side of the semiconductor layer to obtain the IGBT chip capable of automatically monitoring the junction temperature.

[0111] The above is only a preferred embodiment of the present invention. It should be pointed out that for ordinary technicians in this technical field, several improvements and modifications can be made without departing from the principle of the present invention. These improvements and modifications should also be regarded as the scope of protection of the present invention.

Claims

1. An IGBT chip capable of automatically monitoring junction temperature, comprising a collector metal, a P+ collector region, a buffer layer and a semiconductor layer stacked in sequence; The semiconductor layer is divided into a plurality of cell regions, a plurality of terminal regions and a junction temperature detection region; The junction temperature detection area includes, from bottom to top, a semiconductor layer base layer, a force-electric signal conversion layer, a dielectric layer and a metal layer, or includes, from bottom to top, a semiconductor layer base layer, a dielectric layer, a force-electric signal conversion layer and a metal layer; The metal layer includes a first voltage monitoring metal and a second voltage monitoring metal; The first voltage monitoring metal and the second voltage monitoring metal are used to obtain the potential difference generated by the power-electricity signal conversion layer.

2. The IGBT chip according to claim 1, characterized in that: The material of the electromechanical signal conversion layer is aluminum nitride, quartz crystal, lithium gallate, lithium germanate or titanium germanate.

3. The IGBT chip according to claim 1 or 2, characterized in that: The thickness of the electromechanical signal conversion layer is 0.5-1 mm.

4. The IGBT chip according to claim 1, characterized in that: The dielectric layer is made of one or more of borophosphosilicate glass, phosphosilicate glass and silicate glass.

5. The IGBT chip according to claim 1 or 4, characterized in that: The thickness of the dielectric layer is 0.5-3 mm.

6. The IGBT chip according to claim 1, characterized in that: The material of the first voltage monitoring metal is aluminum, copper, gold or silver, and the thickness of the first voltage monitoring metal is 5 to 10 μm; the material of the second voltage monitoring metal is aluminum, copper, gold or silver, and the thickness of the second voltage monitoring metal is 5 to 10 μm.

7. The IGBT chip according to claim 1, characterized in that: In the vertical structure, the junction temperature detection area is located between two cell areas, or between the cell area and the terminal area; In the lateral structure, the junction temperature detection area is located in the middle or edge of the layout of the IGBT chip capable of automatically monitoring the junction temperature.

8. The IGBT chip according to claim 1, characterized in that: Each cell region includes, from bottom to top, a semiconductor layer base layer, an oxidized shielding oxygen layer, a dielectric layer and a metal layer; the metal layer includes an emitter metal and a gate metal; The semiconductor layer base layer includes an N-drift region, a cell body region and a source region, a P+ region is arranged in the source region; the source region is led out from the emitter metal through the P+ region and a metal hole, and the metal hole is in corresponding contact with the P+ region; a plurality of grooves are also arranged in the source region, a gate structure is arranged inside each groove, and the gate structure is led out from the gate metal through the metal hole.

9. The IGBT chip according to claim 1, characterized in that: Each terminal region includes, from bottom to top, a semiconductor layer base layer, an oxidized shielding oxygen layer, a dielectric layer and a metal layer; the metal layer includes a terminal metal; The semiconductor layer base layer includes an N-drift region, a cut-off region and a plurality of terminal ring regions, wherein the cut-off region and the terminal ring region are not connected; and the terminal ring region is led out from the terminal metal through a metal hole.

10. The method for preparing an IGBT chip capable of automatically monitoring junction temperature according to any one of claims 1 to 9, characterized in that: The following steps are involved: (1) depositing a force-electric signal conversion layer on one side of the semiconductor layer; (2) etching the electromechanical signal conversion layer to etch out a cell area window and a terminal area window; (3) performing a first boron implantation and a second boron implantation on the cell region window and the terminal region window respectively, to form a terminal ring region of the terminal region and a cell body region of the cell region; (4) respectively implanting phosphorus into the terminal ring region and the cell body region to form a cutoff region of the terminal region and a source region of the cell region; (5) After the cell area window and the terminal area window are oxidized and shielded from oxygen, the source area is trench etched and gate oxide is oxidized; (6) Deposition and reflow of dielectric layer over the entire area; (7) Performing metal hole etching on the required area to form a metal hole, and then performing high-concentration boron implantation on the metal hole in the window area of ​​the cell area to form a P+ area; finally, performing metal layer deposition on the entire area; (8) sequentially preparing a buffer layer, a P+ collector region and a collector metal on the other side of the semiconductor layer to obtain the IGBT chip capable of automatically monitoring the junction temperature; or, (1) dividing a junction temperature detection area window, a cell area window, and a terminal area window on one side of the semiconductor layer; (2) performing a first boron implantation and a second boron implantation on the cell region window and the terminal region window respectively, to form a terminal ring region of the terminal region and a cell body region of the cell region; (3) respectively implanting phosphorus into the terminal ring region and the cell body region to form a cutoff region of the terminal region and a source region of the cell region; (4) After the cell area window and the terminal area window are oxidized and shielded from oxygen, the source area is trenched and gate oxide is oxidized; (5) Deposition and reflow of dielectric layer over the entire area; (6) depositing a force-electric signal conversion layer in the junction temperature detection area window; (7) Performing metal hole etching on the required area to form a metal hole, and then performing high-concentration boron implantation on the metal hole in the window area of ​​the cell area to form a P+ area; finally, performing metal layer deposition on the entire area; (8) A buffer layer, a P+ collector region and a collector metal are sequentially prepared on the other side of the semiconductor layer to obtain the IGBT chip capable of automatically monitoring the junction temperature.

Images