Thin film packaging method for organic light-emitting device

Abstract

The invention provides an organic light-emitting device thin film packaging method, and relates to the technical field of organic light-emitting device thin film packaging, and the method comprises the steps: judging whether a substrate is a high-activity substrate or a low-activity substrate; cleaning the substrate by using an ion cleaning machine; putting the cleaned substrate into an ALD reaction cavity, and forming a thin film on the substrate; performing quality evaluation on a thin film formed by thermal atom deposition; and selecting two substrates which are evaluated to be qualified as a thin film substrate I and a thin film substrate II respectively, packaging, and checking the sealing quality. The packaging thickness of the organic light-emitting device is greatly reduced by adopting thin film packaging, meanwhile, quality inspection is performed on the thin film before packaging, the water vapor barrier strength and reliability of packaging are further ensured, meanwhile, the shapes of the first thin film substrate and the second thin film substrate are matched with each other, and the reliability of the organic light-emitting device is improved. Therefore, dislocation of the first thin film substrate and the second thin film substrate in the packaging process can be avoided, and meanwhile a better sealing effect can be achieved due to shape matching.

Description

Technical Field

[0001] The invention belongs to the technical field of thin film packaging of organic electroluminescent devices, and in particular relates to a thin film packaging method of an organic electroluminescent device. Background Art

[0002] Organic electroluminescent devices are an electroluminescent technology based on organic materials. They have the advantages of high brightness, high contrast, wide viewing angle and low power consumption. Therefore, they are widely used in the fields of display and lighting. Encapsulation is a very important step in organic electroluminescent devices, which aims to provide a protective, stable and reliable environment while maintaining the performance and life of the device. The packaging of organic electroluminescent devices includes packaging a cover plate on the organic electroluminescent device and packaging with a polymer packaging cover coated with a barrier layer. The organic electroluminescent devices packaged by the two methods are relatively thick and cannot meet the requirements of light and thin use. If thin film packaging is adopted, the existing thin film packaging method lacks the detection of film quality, and only performs an overall inspection after packaging (the organic electroluminescent device is packaged and then inspected). It is easy to have a situation where the film is unqualified but the test result after packaging is qualified. The water vapor barrier strength and reliability of this type of product will decrease rapidly after leaving the factory. At the same time, in the existing thin film packaging method, the films on the upper and lower sides of the organic electroluminescent device adopt a planar structure, which is easy to be misaligned during the packaging process, and the packaging effect is not ideal. Summary of the invention

[0003] The present invention provides a thin film packaging method for an organic electroluminescent device, which is used to solve at least one of the above-mentioned technical problems.

[0004] In order to solve the above technical problems, the present invention discloses a thin film packaging method for an organic electroluminescent device, comprising the following steps: S1. Evaluate the activity of the substrate material to determine whether the substrate is a high-activity substrate or a low-activity substrate; S2. Use an ion cleaning machine to clean the substrate to remove dust and organic pollution on the surface of the substrate; S3, placing the cleaned substrate into the ALD reaction chamber, selecting a high-activity substrate thin film deposition method or a low-activity substrate thin film deposition method for thermal atomic deposition based on the substrate activity judgment result, forming a thin film on the substrate, and repeating step S3 based on a preset film thickness; S4, evaluating the quality of the thin film formed by thermal atomic deposition, if the evaluation is qualified, proceed to step S5, otherwise return to step S1; S5. Select two qualified substrates as thin film substrate one and thin film substrate two respectively. The shapes of thin film substrate one and thin film substrate two match each other. Install thin film substrate one on the base with sealant, place the organic electroluminescent device on the upper surface of thin film substrate one, and then seal thin film substrate two on thin film substrate one with sealant, and check the sealing quality.

[0005] Preferably, the method for depositing a highly active substrate thin film comprises: S6, introducing precursor A, and waiting for precursor A to be completely adsorbed and saturated; S61, introducing an inert gas to purge excess precursor A and reaction by-products; S62, introducing precursor B to react chemically with precursor A to form a thin film; S63, introducing inert gas to purge excess precursor B and reaction by-products.

[0006] Preferably, the active low substrate thin film deposition method: S7, activating the substrate surface material with an activator; S71, introducing precursor A, and waiting for precursor A to be completely adsorbed and saturated; S72, introducing an inert gas to purge excess precursor A and reaction by-products; S73, introducing precursor B to react chemically with precursor A to form a thin film; S74, introducing inert gas to purge excess precursor B and reaction by-products.

[0007] Preferably, the high-activity substrate thin film deposition method and the low-activity substrate thin film deposition method both comprise: The precursor A with inert gas as carrier gas is introduced into the ALD reaction chamber. , precursor A Chemical adsorption occurs with ALOH on the substrate surface to generate and by-products Then, an inert gas is introduced into the ALD reaction chamber to react with the unreacted precursor A. and by-products After purging, the precursor B with inert gas as carrier gas is introduced into the ALD reaction chamber. , precursor B and Chemical adsorption occurs, generating ALOH and by-products Then, an inert gas is introduced into the ALD reaction chamber to remove the unreacted precursor B. and by-products Perform the purge to complete one cycle.

[0008] Preferably, the substrate comprises PEN, PI, PET and glass, and the thin film deposition temperature is set to 60°C.

[0009] Preferably, step S1 of evaluating the activity of the substrate material can be achieved by using surface analysis technology, gas adsorption test, chemical reaction test or device performance test; Surface analysis techniques include the use of X-ray photoelectron spectroscopy, scanning electron microscopy and transmission electron microscopy to analyze the elemental composition, morphology and crystal structure characteristics of the substrate surface to determine the activity of the substrate material; Gas adsorption testing includes evaluating the pore structure and specific surface area of ​​the substrate material through surface area measurement and pore size distribution analysis to obtain the activity of the substrate material; Chemical reaction testing is to evaluate the activity of substrate materials by conducting known chemical reactions on them, observing the reaction process and reaction products; Device performance testing evaluates the activity of substrate materials by preparing relevant devices and testing their performance.

[0010] Preferably, matching grooves and matching protrusions are provided at the corresponding substrate edges of film substrate one and film substrate two, the matching grooves and matching protrusions of film substrate one and film substrate two match each other, and the matching grooves and matching protrusions are bonded by sealant.

[0011] Preferably, the quality assessment of the thin film formed by thermal atomic deposition includes: S41, selecting several areas of the substrate on which the thin film is deposited as test areas; S42, measuring the film thickness and refractive index of several regions of the substrate by using a spectral ellipsometer; S43, detecting the surface roughness of several regions of the substrate by using an atomic force microscope; S44, detecting residual stress in several regions of the substrate by Raman spectroscopy; S45, inputting the test results of film thickness, refractive index, surface roughness and residual stress of several regions into the trained barrier performance evaluation model, optical performance evaluation model, interface quality evaluation model and anti-peeling cracking performance evaluation model respectively, to obtain barrier performance evaluation values, optical performance evaluation values, interface quality evaluation values ​​and anti-peeling cracking performance evaluation values ​​of several regions; S46, constructing a film quality evaluation matrix based on the test results of film thickness, refractive index, surface roughness and residual stress of several regions and the barrier performance evaluation values, optical performance evaluation values, interface quality evaluation values ​​and anti-peeling cracking performance evaluation values ​​of several regions; S47. Evaluate the film quality based on the film quality evaluation matrix.

[0012] Preferably, based on the test results of film thickness, refractive index, surface roughness and residual stress of several regions and the barrier performance evaluation values, optical performance evaluation values, interface quality evaluation values ​​and anti-peeling cracking performance evaluation values ​​of several regions, a film quality evaluation matrix is ​​constructed: (1); among which, is the quality assessment matrix of the film, is the film thickness detection value of the first test area, is the film thickness detection value of the second test area, is the film thickness detection value of the nth test area, is the refractive index detection value of the first test area, is the refractive index detection value of the second test area, is the refractive index detection value of the nth test area, is the surface roughness test value of the first test area, is the surface roughness test value of the second test area, is the surface roughness test value of the nth test area, is the residual stress detection value of the first test area, is the residual stress detection value of the second test area, is the residual stress detection value of the nth test area, is the barrier performance evaluation value of the first test area, is the barrier performance evaluation value of the second test area, is the barrier performance evaluation value of the nth test area, is the optical performance evaluation value of the first test area, is the optical performance evaluation value of the second test area, is the optical performance evaluation value of the nth test area, is the interface quality evaluation value of the first test area, is the interface quality evaluation value of the second test area, is the interface quality evaluation value of the nth test area, is the anti-peeling cracking performance evaluation value of the first test area, is the anti-peeling cracking performance evaluation value of the second test area, is the anti-peeling cracking performance evaluation value of the nth test area.

[0013] Preferably, evaluating the film quality based on the film quality evaluation matrix includes: S471, deleting all film thickness detection values ​​and barrier performance evaluation values ​​in the quality evaluation matrix of the film to obtain a classification matrix 1; S472, deleting all refractive index detection values ​​and optical performance evaluation values ​​in the quality evaluation matrix of the film to obtain a classification matrix 2; S473, deleting all surface roughness detection values ​​and interface quality evaluation values ​​in the quality evaluation matrix of the film to obtain classification matrix three; S474, deleting all residual stress detection values ​​and anti-peeling cracking performance evaluation values ​​in the quality evaluation matrix of the film to obtain a classification matrix 4; S475, comparing the rank of classification matrix one, the rank of classification matrix two, the rank of classification matrix three and the rank of classification matrix four with the corresponding performance evaluation values ​​respectively, if the rank of classification matrix one, the rank of classification matrix two, the rank of classification matrix three and the rank of classification matrix four are greater than the corresponding performance evaluation values, then setting the corresponding performance as important performance, otherwise setting it as secondary performance; S476. Calculate the comprehensive evaluation value of film quality: (2); among which, is the comprehensive evaluation value of film quality, is the weight of the evaluation value corresponding to the important performance, is the weight of the evaluation value corresponding to the secondary performance, is the average value of the evaluation value corresponding to the ith important performance, X is the total number of important performances, is the average value of the evaluation value corresponding to the jth secondary performance; If the film quality comprehensive evaluation value is higher than the film quality preset comprehensive evaluation value, the film is qualified, otherwise it is unqualified.

[0014] Compared with the prior art, the present invention has the following beneficial effects: The present invention adopts thin film packaging to greatly reduce the packaging thickness of the organic electroluminescent device. At the same time, the film is quality inspected before packaging, which further ensures the water vapor barrier strength and reliability of the packaging. At the same time, the shapes of the thin film substrate 1 and the thin film substrate 2 are matched with each other, which can avoid the misalignment of the thin film substrate 1 and the thin film substrate 2 during the packaging process. At the same time, the matching of the shapes can also play a better sealing role. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] The accompanying drawings are used to provide a further understanding of the present invention and constitute a part of the specification. Together with the embodiments of the present invention, they are used to explain the present invention and do not constitute a limitation of the present invention. In the accompanying drawings: Figure 1 It is a schematic diagram of the thin film packaging structure of the organic electroluminescent device of the present invention.

[0016] Figure 2 It is a schematic diagram of the structure of thin film substrate 1 and thin film substrate 2 of the present invention.

[0017] In the figure: 1, substrate; 100, thin film substrate 1; 101, thin film substrate 2; 102, matching groove; 103, matching protrusion; 2, organic electroluminescent device; 3, base. DETAILED DESCRIPTION

[0018] The preferred embodiments of the present invention are described below in conjunction with the accompanying drawings. It should be understood that the preferred embodiments described herein are only used to illustrate and explain the present invention, and are not used to limit the present invention.

[0019] In addition, in the present invention, the descriptions of "first", "second", etc. are only used for descriptive purposes, and do not specifically refer to the order or sequence, nor are they used to limit the present invention. They are only used to distinguish components or operations described with the same technical terms, and cannot be understood as indicating or implying their relative importance or implicitly indicating the number of technical features indicated. Therefore, the features defined as "first" and "second" may explicitly or implicitly include at least one of the features. In addition, the technical solutions and technical features between the various embodiments can be combined with each other, but they must be based on the ability of ordinary technicians in the field to implement them. When the combination of technical solutions is contradictory or cannot be implemented, it should be considered that such a combination of technical solutions does not exist and is not within the scope of protection required by the present invention.

[0020] The present invention provides the following embodiments Example 1 The embodiment of the present invention provides a thin film packaging method for an organic electroluminescent device, such as Figure 1 and 2 As shown, the following steps are included: S1, evaluating the activity of the substrate material to determine whether the substrate 1 is a high-activity substrate or a low-activity substrate; S2, using an ion cleaning machine to clean the substrate to remove dust and organic pollution on the surface of the substrate 1; S3, placing the cleaned substrate 1 into the ALD reaction chamber, selecting a high-activity substrate thin film deposition method or a low-activity substrate thin film deposition method for thermal atomic deposition based on the substrate activity judgment result, forming a thin film on the substrate 1, and repeating step S3 based on a preset film thickness; S4, evaluating the quality of the thin film formed by thermal atomic deposition, if the evaluation is qualified, proceed to step S5, otherwise return to step S1; S5. Select two qualified substrates 1 as thin film substrate 100 and thin film substrate 2 101 respectively. The shapes of thin film substrate 100 and thin film substrate 2 101 match each other. Thin film substrate 100 is installed on base 3 by sealant. The organic electroluminescent device 2 is placed on the upper surface of thin film substrate 100. Then, thin film substrate 2 101 is sealed on thin film substrate 100 by sealant, and the sealing quality is checked.

[0021] Preferably, the substrate 1 comprises PEN, PI, PET and glass, and the thin film deposition temperature is set to 60°C.

[0022] The working principle and beneficial effects of the above technical solution are as follows: the present invention first evaluates the activity of the substrate material to determine whether the substrate is a high-activity substrate or a low-activity substrate, then cleans the substrate with an ion cleaner to remove dust and organic pollution on the surface, then places the cleaned substrate into an ALD reaction chamber, selects different thin film packaging methods for thermal atomic deposition according to the judgment result of the substrate activity, forms a thin film, and performs a quality evaluation on the formed thin film. If the evaluation is qualified, proceed to the next step, otherwise the substrate activity is re-evaluated, and finally, two substrates that have been evaluated to be qualified are selected as thin film substrate 1 100 and thin film substrate 2 101, an organic electroluminescent device is placed on the upper surface of thin film substrate 1 100, and then thin film substrate 2 101 is sealed on thin film substrate 1 100 by a sealant, and the sealing quality is checked; By evaluating the activity of the substrate material, we can select a suitable thin film encapsulation method to improve the encapsulation effect. By cleaning the substrate with an ion cleaner, we can remove dust and organic pollution on the surface and provide a clean surface for the deposition of the thin film. The thin film formed by thermal atomic deposition can provide barrier and protection functions. We can evaluate the quality of the thin film to ensure that the quality and performance of the film meet the requirements. By evaluating the activity of the substrate, cleaning the substrate, thin film deposition, quality evaluation and sealant encapsulation, we can achieve effective encapsulation of organic electroluminescent devices and provide good encapsulation effects and material compatibility. The present invention adopts thin film packaging to greatly reduce the packaging thickness of the organic electroluminescent device. At the same time, the film is quality inspected before packaging, which further ensures the water vapor barrier strength and reliability of the packaging. At the same time, the shapes of the thin film substrate 100 and the thin film substrate 2 101 are matched with each other, which can avoid the film substrate 100 and the thin film substrate 2 101 from being misaligned during the packaging process. At the same time, the shape matching can also play a better sealing role.

[0023] Example 2 Based on Example 1, the method for depositing a highly active substrate thin film includes: S6, introducing precursor A, and waiting for precursor A to be completely adsorbed and saturated; S61, introducing an inert gas to purge excess precursor A and reaction by-products; S62, introducing precursor B to react chemically with precursor A to form a thin film; S63, introducing an inert gas to purge excess precursor B and reaction by-products; Active low substrate thin film deposition method: S7, activating the surface material of the substrate 1 with an activator; S71, introducing precursor A, and waiting for precursor A to be completely adsorbed and saturated; S72, introducing an inert gas to purge excess precursor A and reaction by-products; S73, introducing precursor B to react chemically with precursor A to form a thin film; S74, introducing inert gas to purge excess precursor B and reaction by-products.

[0024] The working principle and beneficial effects of the above technical solution are: the purging of inert gas and the selection of different deposition methods based on the activity of the substrate can significantly improve the quality of the deposited film.

[0025] Example 3 On the basis of Example 1, the high-activity substrate thin film deposition method and the low-activity substrate thin film deposition method both include: The precursor A with inert gas as carrier gas is introduced into the ALD reaction chamber. , precursor A Chemical adsorption occurs with ALOH on the surface of substrate 1 to generate and by-products Then, an inert gas is introduced into the ALD reaction chamber to react with the unreacted precursor A. and by-products After purging, the precursor B with inert gas as carrier gas is introduced into the ALD reaction chamber. , precursor B and Chemical adsorption occurs, generating ALOH and by-products Then, an inert gas is introduced into the ALD reaction chamber to remove the unreacted precursor B. and by-products Perform the purge to complete one cycle.

[0026] The working principle and beneficial effects of the above technical solution are as follows: this method can achieve high-precision thin film deposition by precisely controlling the introduction, adsorption and purging processes of the precursors, and can achieve thin film thickness control at the nanometer level. Through multiple chemical adsorption and purging steps, unreacted precursors and by-products can be effectively removed, thereby improving the uniformity and quality of the thin film, reducing defects, and improving the performance of the packaging material. Through precise chemical reaction control and optimization processes, the deposition quality of the thin film is improved, the packaging effect is enhanced, and good adaptability and scalability are provided, meeting the production needs of organic electroluminescent devices.

[0027] Example 4 Based on Example 1, step S1 of evaluating the activity of the substrate material can be implemented by using surface analysis technology, gas adsorption test, chemical reaction test or device performance test; Surface analysis techniques include using X-ray photoelectron spectroscopy, scanning electron microscopy and transmission electron microscopy to analyze the elemental composition, morphology and crystal structure characteristics of the surface of the substrate 1 to obtain the activity of the substrate material; Gas adsorption testing includes evaluating the pore structure and specific surface area of ​​the substrate material through surface area measurement and pore size distribution analysis to obtain the activity of the substrate material; Chemical reaction testing is to evaluate the activity of substrate materials by conducting known chemical reactions on substrate materials, observing the reaction process and reaction products (for example, surface acid-base testing can check the acid-base properties of substrate materials); Device performance testing evaluates the activity of substrate materials by preparing relevant devices and testing their performance (for example, for optoelectronic devices, the activity of substrate materials can be evaluated by preparing devices and measuring their photoelectric conversion efficiency).

[0028] The working principle and beneficial effects of the above technical solution are as follows: by evaluating the activity of the substrate 1, selecting different thin film deposition methods can effectively improve the film quality and deposition success rate.

[0029] Example 5 On the basis of Example 1, matching grooves 102 and matching protrusions 103 are provided at the corresponding substrate edges of thin film substrate 1 100 and thin film substrate 2 101, and the matching grooves 102 and matching protrusions 103 of thin film substrate 1 100 and thin film substrate 2 101 match each other, and the matching grooves 102 and matching protrusions 103 are bonded by sealant.

[0030] The working principle and beneficial effects of the above technical solution are as follows: the mating groove 102 and the mating protrusion 103 engage with each other during use, which can improve the mechanical strength and stability of the package, while ensuring that the relative position relationship between the film substrate 1 100 and the film substrate 2 101 is fixed, which helps to improve the packaging quality.

[0031] Example 6 Based on Example 1, the quality assessment of the thin film formed by thermal atomic deposition includes: S41, selecting several areas of the substrate 1 on which the thin film is deposited as test areas; S42, measuring the film thickness and refractive index of several regions of the substrate 1 by using a spectral ellipsometer; S43, detecting the surface roughness of several regions of the substrate 1 by using an atomic force microscope; S44, detecting residual stress in several regions of the substrate 1 by Raman spectroscopy; S45, inputting the test results of film thickness, refractive index, surface roughness and residual stress of several regions into the trained barrier performance evaluation model, optical performance evaluation model, interface quality evaluation model and anti-peeling cracking performance evaluation model respectively, to obtain barrier performance evaluation values, optical performance evaluation values, interface quality evaluation values ​​and anti-peeling cracking performance evaluation values ​​of several regions; S46, constructing a film quality evaluation matrix based on the test results of film thickness, refractive index, surface roughness and residual stress of several regions and the barrier performance evaluation values, optical performance evaluation values, interface quality evaluation values ​​and anti-peeling cracking performance evaluation values ​​of several regions; S47. Evaluate the film quality based on the film quality evaluation matrix.

[0032] The working principle and beneficial effects of the above technical solution are as follows: selecting several test areas for testing ensures the accuracy of the final evaluation results from the source; selecting film thickness, refractive index, surface roughness and residual stress as evaluation parameters; selecting barrier performance evaluation value, optical performance evaluation value, interface quality evaluation value and anti-peeling cracking performance evaluation value as corresponding evaluation values; evaluating the film from multiple dimensions to ensure the reliability of the evaluation results; constructing a film quality evaluation matrix can improve the efficiency of the evaluation; and the data can accurately and quickly evaluate the performance and quality of the film, providing guidance and optimization for the film encapsulation process.

[0033] Example 7 On the basis of Example 6, based on the test results of film thickness, refractive index, surface roughness and residual stress in several regions and the barrier performance evaluation values, optical performance evaluation values, interface quality evaluation values ​​and anti-peeling cracking performance evaluation values ​​in several regions, a film quality evaluation matrix was constructed: (1); among which, is the quality assessment matrix of the film, is the film thickness detection value of the first test area, is the film thickness detection value of the second test area, is the film thickness detection value of the nth test area, is the refractive index detection value of the first test area, is the refractive index detection value of the second test area, is the refractive index detection value of the nth test area, is the surface roughness test value of the first test area, is the surface roughness test value of the second test area, is the surface roughness test value of the nth test area, is the residual stress detection value of the first test area, is the residual stress detection value of the second test area, is the residual stress detection value of the nth test area, is the barrier performance evaluation value of the first test area, is the barrier performance evaluation value of the second test area, is the barrier performance evaluation value of the nth test area, is the optical performance evaluation value of the first test area, is the optical performance evaluation value of the second test area, is the optical performance evaluation value of the nth test area, is the interface quality evaluation value of the first test area, is the interface quality evaluation value of the second test area, is the interface quality evaluation value of the nth test area, is the anti-peeling cracking performance evaluation value of the first test area, is the anti-peeling cracking performance evaluation value of the second test area, is the anti-peeling cracking performance evaluation value of the nth test area.

[0034] The working principle and beneficial effects of the above technical solution are as follows: by integrating multiple test results and performance evaluation values ​​into a matrix, the quality of the film can be systematically evaluated, the comprehensiveness of the evaluation is improved, and all relevant characteristics are ensured to be taken into account. At the same time, the use of the evaluation matrix can make decisions based on a data-driven approach, helping researchers or engineers to more easily identify the key factors affecting the performance of the film, so as to make targeted improvements, discover potential production problems and improvement points, thereby optimizing the production process and improving the consistency and quality of the product.

[0035] Example 8 On the basis of Example 7, evaluating the film quality based on the film quality evaluation matrix includes: S471, deleting all film thickness detection values ​​and barrier performance evaluation values ​​in the quality evaluation matrix of the film to obtain a classification matrix 1; S472, deleting all refractive index detection values ​​and optical performance evaluation values ​​in the quality evaluation matrix of the film to obtain a classification matrix 2; S473, deleting all surface roughness detection values ​​and interface quality evaluation values ​​in the quality evaluation matrix of the film to obtain classification matrix three; S474, deleting all residual stress detection values ​​and anti-peeling cracking performance evaluation values ​​in the quality evaluation matrix of the film to obtain a classification matrix 4; S475, comparing the rank of classification matrix one, the rank of classification matrix two, the rank of classification matrix three and the rank of classification matrix four with the corresponding performance evaluation values ​​respectively, if the rank of classification matrix one, the rank of classification matrix two, the rank of classification matrix three and the rank of classification matrix four are greater than the corresponding performance evaluation values, then setting the corresponding performance as important performance, otherwise setting it as secondary performance; S476. Calculate the comprehensive evaluation value of film quality: (2); among which, is the comprehensive evaluation value of film quality, is the weight of the evaluation value corresponding to the important performance, is the weight of the evaluation value corresponding to the secondary performance, is the average value of the evaluation value corresponding to the ith important performance, X is the total number of important performances, is the average value of the evaluation value corresponding to the jth secondary performance; If the film quality comprehensive evaluation value is higher than the film quality preset comprehensive evaluation value, the film is qualified, otherwise it is unqualified.

[0036] The working principle and beneficial effects of the above technical solution are as follows: by comparing the rank of classification matrix one, the rank of classification matrix two, the rank of classification matrix three and the rank of classification matrix four with the corresponding performance evaluation values, the importance of each performance indicator can be analyzed more deeply to ensure that key performance is highlighted in the evaluation. The calculation of the comprehensive evaluation value of film quality provides a systematic quality control means, which enables unqualified products to be discovered and adjusted in time during the production process. By setting a preset comprehensive evaluation value of film quality, a clear qualification standard is constructed, which helps to improve the traceability and compliance of the production process.

[0037] Obviously, those skilled in the art can make various changes and modifications to the present invention without departing from the spirit and scope of the present invention. Thus, if these modifications and variations of the present invention fall within the scope of the claims of the present invention and their equivalents, the present invention is also intended to include these modifications and variations.

Claims

1. A thin film encapsulation method for an organic electroluminescent device, characterized in that: The following steps are involved: S1. Evaluate the activity of the substrate material to determine whether the substrate (1) is a high-activity substrate or a low-activity substrate; S2. Cleaning the substrate with an ion cleaning machine to remove dust and organic contamination on the surface of the substrate (1); S3, placing the cleaned substrate (1) into the ALD reaction chamber, selecting a high-activity substrate thin film deposition method or a low-activity substrate thin film deposition method for thermal atomic deposition based on the substrate activity judgment result, forming a thin film on the substrate (1), and repeating step S3 based on a preset film thickness; S4, evaluating the quality of the thin film formed by thermal atomic deposition, if the evaluation is qualified, proceed to step S5, otherwise return to step S1; S5. Select two substrates (1) that have passed the evaluation as thin film substrate one (100) and thin film substrate two (101), respectively. The shapes of thin film substrate one (100) and thin film substrate two (101) match each other. Install thin film substrate one (100) on the base (3) by means of sealant. Place the organic electroluminescent device (2) on the upper surface of thin film substrate one (100). Then, seal thin film substrate two (101) on thin film substrate one (100) by means of sealant, and check the sealing quality.

2. The method for thin film encapsulation of an organic electroluminescent device according to claim 1, characterized in that: Methods for depositing thin films on active substrates include: S6, introducing precursor A, and waiting for precursor A to be completely adsorbed and saturated; S61, introducing an inert gas to purge excess precursor A and reaction by-products; S62, introducing precursor B to react chemically with precursor A to form a thin film; S63, introducing inert gas to purge excess precursor B and reaction by-products.

3. The method for thin film encapsulation of an organic electroluminescent device according to claim 1, characterized in that: Active low substrate thin film deposition method: S7, activating the surface material of the substrate (1) with an activating agent; S71, introducing precursor A, and waiting for precursor A to be completely adsorbed and saturated; S72, introducing an inert gas to purge excess precursor A and reaction by-products; S73, introducing precursor B to react chemically with precursor A to form a thin film; S74, introducing inert gas to purge excess precursor B and reaction by-products.

4. The method for thin film encapsulation of an organic electroluminescent device according to claim 1, characterized in that: The high-activity substrate thin film deposition method and the low-activity substrate thin film deposition method both include: The precursor A with inert gas as carrier gas is introduced into the ALD reaction chamber. , precursor A Chemical adsorption occurs with ALOH on the surface of the substrate (1) to generate and by-products Then, an inert gas is introduced into the ALD reaction chamber to react with the unreacted precursor A. and by-products After purging, the precursor B with inert gas as carrier gas is introduced into the ALD reaction chamber. , precursor B and Chemical adsorption occurs, generating ALOH and by-products Then, an inert gas is introduced into the ALD reaction chamber to remove the unreacted precursor B. and by-products Perform the purge to complete one cycle.

5. The method for thin film encapsulation of an organic electroluminescent device according to claim 1, characterized in that: The substrate (1) includes PEN, PI, PET and glass, and the thin film deposition temperature is set to 60°C.

6. The method for thin film encapsulation of an organic electroluminescent device according to claim 1, characterized in that: Step S1: evaluating the activity of the substrate material can be achieved by using surface analysis technology, gas adsorption test, chemical reaction test or device performance test; Surface analysis techniques include the use of X-ray photoelectron spectroscopy, scanning electron microscopy and transmission electron microscopy to analyze the elemental composition, morphology and crystal structure characteristics of the substrate (1) surface to determine the activity of the substrate material; Gas adsorption testing includes evaluating the pore structure and specific surface area of ​​the substrate material through surface area measurement and pore size distribution analysis to obtain the activity of the substrate material; Chemical reaction testing is to evaluate the activity of substrate materials by conducting known chemical reactions on them, observing the reaction process and reaction products; Device performance testing evaluates the activity of substrate materials by preparing relevant devices and testing their performance.

7. The method for thin film encapsulation of an organic electroluminescent device according to claim 1, characterized in that: Matching grooves (102) and matching protrusions (103) are provided at the corresponding substrate edges of the thin film substrate 1 (100) and the thin film substrate 2 (101); the matching grooves (102) and matching protrusions (103) of the thin film substrate 1 (100) and the thin film substrate 2 (101) match each other, and the matching grooves (102) and matching protrusions (103) are bonded together by means of a sealant.

8. The method for thin film encapsulation of an organic electroluminescent device according to claim 1, characterized in that: Quality assessment of thin films formed by thermal atomic deposition includes: S41, selecting several areas of the substrate (1) on which the thin film is deposited as test areas; S42, measuring the film thickness and refractive index of several regions of the substrate (1) using a spectral ellipsometer; S43, testing the surface roughness of several regions of the substrate (1) using an atomic force microscope; S44, detecting residual stress in several regions of the substrate (1) by Raman spectroscopy; S45, inputting the test results of film thickness, refractive index, surface roughness and residual stress of several regions into the trained barrier performance evaluation model, optical performance evaluation model, interface quality evaluation model and anti-peeling cracking performance evaluation model respectively, to obtain barrier performance evaluation values, optical performance evaluation values, interface quality evaluation values ​​and anti-peeling cracking performance evaluation values ​​of several regions; S46, constructing a film quality evaluation matrix based on the test results of film thickness, refractive index, surface roughness and residual stress of several regions and the barrier performance evaluation values, optical performance evaluation values, interface quality evaluation values ​​and anti-peeling cracking performance evaluation values ​​of several regions; S47. Evaluate the film quality based on the film quality evaluation matrix.

9. The method for thin film encapsulation of an organic electroluminescent device according to claim 8, characterized in that: Based on the test results of film thickness, refractive index, surface roughness and residual stress in several regions and the barrier performance evaluation values, optical performance evaluation values, interface quality evaluation values ​​and anti-peeling cracking performance evaluation values ​​in several regions, a film quality evaluation matrix is ​​constructed: (1); among which, is the quality assessment matrix of the film, is the film thickness detection value of the first test area, is the film thickness detection value of the second test area, is the film thickness detection value of the nth test area, is the refractive index detection value of the first test area, is the refractive index detection value of the second test area, is the refractive index detection value of the nth test area, is the surface roughness test value of the first test area, is the surface roughness test value of the second test area, is the surface roughness test value of the nth test area, is the residual stress detection value of the first test area, is the residual stress detection value of the second test area, is the residual stress detection value of the nth test area, is the barrier performance evaluation value of the first test area, is the barrier performance evaluation value of the second test area, is the barrier performance evaluation value of the nth test area, is the optical performance evaluation value of the first test area, is the optical performance evaluation value of the second test area, is the optical performance evaluation value of the nth test area, is the interface quality evaluation value of the first test area, is the interface quality evaluation value of the second test area, is the interface quality evaluation value of the nth test area, is the anti-peeling cracking performance evaluation value of the first test area, is the anti-peeling cracking performance evaluation value of the second test area, is the anti-peeling cracking performance evaluation value of the nth test area.

10. The method for thin film encapsulation of an organic electroluminescent device according to claim 9, characterized in that: Film quality assessment based on the film quality assessment matrix includes: S471, deleting all film thickness detection values ​​and barrier performance evaluation values ​​in the quality evaluation matrix of the film to obtain a classification matrix 1; S472, deleting all refractive index detection values ​​and optical performance evaluation values ​​in the quality evaluation matrix of the film to obtain a classification matrix 2; S473, deleting all surface roughness detection values ​​and interface quality evaluation values ​​in the quality evaluation matrix of the film to obtain classification matrix three; S474, deleting all residual stress detection values ​​and anti-peeling cracking performance evaluation values ​​in the quality evaluation matrix of the film to obtain a classification matrix 4; S475, comparing the rank of classification matrix one, the rank of classification matrix two, the rank of classification matrix three and the rank of classification matrix four with the corresponding performance evaluation values ​​respectively, if the rank of classification matrix one, the rank of classification matrix two, the rank of classification matrix three and the rank of classification matrix four are greater than the corresponding performance evaluation values, then setting the corresponding performance as important performance, otherwise setting it as secondary performance; S476. Calculate the comprehensive evaluation value of film quality: (2); among which, is the comprehensive evaluation value of film quality, is the weight of the evaluation value corresponding to the important performance, is the weight of the evaluation value corresponding to the secondary performance, is the average value of the evaluation value corresponding to the ith important performance, X is the total number of important performances, is the average value of the evaluation value corresponding to the jth secondary performance; If the film quality comprehensive evaluation value is higher than the film quality preset comprehensive evaluation value, the film is qualified, otherwise it is unqualified.

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