Management apparatus, management method, and wafer manufacturing system

Abstract

The management device (20) is provided with a control unit (22) that manages the plurality of wafer processing devices (1). The control unit (22) determines, from among the plurality of wafer processing devices (1), a wafer processing device (1) assigned to the processing of a predetermined type of wafer, on the basis of the distance between the post-processing characteristics of the wafers processed by the respective wafer processing devices (1) and the center value of the specification of the predetermined type of wafer.

Description

Technical Field

[0001] The present disclosure relates to a management device and a management method for managing a wafer processing device, and a wafer manufacturing system including the wafer processing device. Background Art

[0002] Conventionally, there is known a method for polishing both sides of a wafer that can suppress the batch-to-batch variation in GBIR value of polished wafers in a semiconductor wafer polishing apparatus (see, for example, Patent Document 1).

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Publication No. 2019-114708 Summary of the invention

[0006] Problems to be solved by the invention

[0007] In recent years, as the design rules in semiconductor devices have become increasingly refined, the requirements for semiconductor wafer specifications have become stricter. As a result, in terms of promoting the improvement of wafer processing yield, the difference in yield between devices depending on the required specifications has become a problem.

[0008] Therefore, an object of the present disclosure is to provide a management device, a management method, and a wafer manufacturing system that can improve the processing yield of wafers.

[0009] Means used to solve problems

[0010] One embodiment of the present disclosure that solves the above-mentioned problems is as follows.

[0011] [1] A management device comprising a control unit for managing a plurality of wafer processing devices; the control unit determines a wafer processing device to be assigned to process a wafer of a specified type from among the plurality of wafer processing devices based on the distance between the post-processing characteristics of the wafers processed by each of the wafer processing devices and a center value of a specification of the wafer of a specified type.

[0012] [2] In the management device described in [1] above, the control unit calculates the post-processing characteristics closest to the center value of the specification of the wafer of the specified variety as the optimal characteristics for each of the wafer processing devices, and determines the wafer processing device assigned to process the wafer of the specified variety in order of the distance between the optimal characteristics and the center value of the specification of the wafer of the specified variety from short to long.

[0013] [3] In the management device described in [2] above, the control unit selects, from among the post-processing characteristics when the processing conditions of the above-mentioned wafer processing devices are changed, a post-processing characteristic that is closest to the center value of the specification of the above-mentioned specified variety of wafers as the above-mentioned optimal characteristic.

[0014] [4] In the management device described in [3] above, the processing conditions are determined by endpoint detection performed by each of the wafer processing devices.

[0015] [5] In a management device as described in any one of [1] to [4] above, the control unit plots points representing the post-processing characteristics of the aforementioned chip in a graph with the center value of the specification of the aforementioned specified variety of chip as the origin, and calculates the distance between the plotted points and the origin of the aforementioned graph.

[0016] [6] A management method for managing a plurality of wafer processing devices, comprising the following steps: determining a wafer processing device assigned to process the aforementioned specified type of wafer from among the aforementioned plurality of wafer processing devices based on the distance between the post-processing characteristics of the wafer processed by the aforementioned each wafer processing device and the center value of the specification of the aforementioned specified type of wafer.

[0017] [7] A wafer manufacturing system comprising the management device described in any one of [1] to [5] above, and a wafer processing device managed by the management device.

[0018] Effects of the Invention

[0019] According to the management device, management method and wafer manufacturing system disclosed herein, the wafer processing yield can be improved. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] Figure 1 This is a block diagram showing a configuration example of a wafer manufacturing system according to one embodiment of the present disclosure.

[0021] Figure 2 It is a top view of a double-side polishing device of a wafer as a wafer processing device according to one embodiment of the present disclosure.

[0022] Figure 3 yes Figure 2 AA section view in.

[0023] Figure 4 This is a diagram showing an example of the relationship between the shape of the wafer front surface, the amount of irregularities, and the peripheral flatness.

[0024] Figure 5 This is a graph showing an example of post-processing characteristics of a wafer processing apparatus.

[0025] Figure 6This is a graph showing an example of the relationship between the post-processing characteristics and specifications of a wafer processed by a wafer processing apparatus.

[0026] Figure 7 This is an example of a map showing the allocation of wafer processing equipment.

[0027] Figure 8 This is a flowchart showing a procedure example of a management method according to one embodiment of the present disclosure. DETAILED DESCRIPTION

[0028] Hereinafter, a wafer manufacturing system 100 according to an embodiment of the present disclosure will be described with reference to the accompanying drawings. Figure 1 As shown, the wafer manufacturing system 100 includes a wafer processing apparatus 1 and a management apparatus 20. The management apparatus 20 manages the wafer processing apparatus 1. The management apparatus 20 can allocate processing steps to the wafer processing apparatus 1. The management apparatus 20 can determine processing conditions in the wafer processing apparatus 1.

[0029] In this embodiment, the wafer processing device 1 is described as a double-side polishing device for a wafer. The wafer processing device 1 is not limited to a polishing device, and may be other processing devices such as a wire saw device.

[0030] (Configuration Example of Wafer Processing Apparatus 1)

[0031] Figure 2 It is a top view of the wafer processing apparatus 1 according to one embodiment of the present disclosure. Figure 3 yes Figure 2 AA section view in. Figure 2 and Figure 3 As shown, the wafer processing device 1 comprises: a rotating platform 4 having an upper platform 2 and a lower platform 3 opposite thereto; a sun gear 5 disposed at the rotation center of the rotating platform 4; and an internal gear 6 disposed in an annular shape at the outer periphery of the rotating platform 4. Figure 3 As shown, polishing pads 7 are attached to the opposing surfaces of the upper and lower rotating platforms 4 , that is, the lower surface side of the upper platform 2 as the polishing surface and the upper surface side of the lower platform 3 as the polishing surface.

[0032] The wafer processing apparatus 1 includes a plurality of carrier plates 9, which are disposed between the upper platform 2 and the lower platform 3 and have one or more holes 8 for holding a workpiece W (wafer) to be processed. Figure 2 FIG. 8 shows only one of the plurality of carrier plates 9 . The number of the holes 8 may be one or more, and may be three, for example. The workpiece W may be held in the hole 8 .

[0033] Assume that the wafer processing device 1 is a two-side polishing device of a planetary gear type that can make the carrier plate 9 perform planetary motion including revolution and rotation by rotating the sun gear 5 and the internal gear 6. The wafer processing device 1 can grind both sides of the workpiece W simultaneously by making the carrier plate 9 perform planetary motion while supplying polishing slurry and rotating the upper platform 2 and the lower platform 3 relative to the carrier plate 9, so that the polishing pad 7 attached to the upper and lower rotating platforms 4 and the two sides of the workpiece W held in the hole 8 of the carrier plate 9 slide.

[0034] In the wafer processing device 1 related to the present embodiment, the upper platform 2 has one or more holes 10 that pass through from the upper surface of the upper platform 2 to the lower surface that serves as the grinding surface. That is, the hole 10 is provided on the upper platform 2. One hole 10 is arranged at a position near the center of the workpiece W. The number of holes 10 is not limited to one, and can be two or more. The hole 10 is not limited to the upper platform 2, and can also be provided on the lower platform 3. At least one hole 10 can be provided on at least one of the upper platform 2 and the lower platform 3. In addition, the hole 10 can also be provided on the circumference of the upper platform 2 ( Figure 2 In addition, if Figure 3 As shown, the hole 10 can penetrate to the polishing pad 7 attached to the upper platform 2. That is, the hole 10 can penetrate from the upper surface of the upper platform 2 to the lower surface of the polishing pad 7.

[0035] The wafer processing apparatus 1 may be configured to measure the thickness of the workpiece W in real time from one or more holes 10 during the grinding of both sides of the workpiece W. Specifically, the wafer processing apparatus 1 may include a workpiece thickness measuring device 11 at a position corresponding to the hole 10. Figure 3 In the example, the workpiece thickness gauge 11 is arranged above the upper platform 2. In the present embodiment, it is assumed that the workpiece thickness gauge 11 is a wavelength-variable infrared laser device. The workpiece thickness gauge 11 may, for example, include an optical unit for irradiating a laser to the workpiece W, a detection unit for detecting the laser reflected from the workpiece W, and a calculation unit for calculating the thickness of the workpiece W based on the detected laser. The illustrated workpiece thickness gauge 11 can calculate the thickness of the workpiece W based on the difference in optical path length between the reflected light reflected by the front side of the workpiece W and the reflected light reflected by the back side of the workpiece W of the laser incident on the workpiece W. In addition, the workpiece thickness gauge 11 can be any device that can measure the thickness of the workpiece W in real time, and is not limited to a device using the illustrated infrared laser.

[0036] The wafer processing apparatus 1 according to the present embodiment includes a control unit 12. The control unit 12 is connected to the upper surface plate 2, the lower surface plate 3, the sun gear 5, the internal gear 6, and the work thickness measuring device 11. The control unit 12 controls each component of the wafer processing apparatus 1.

[0037] The wafer processing device 1 may perform only one process of processing the workpiece W, or may perform two or more processes. The process of processing the workpiece W is also called a processing process. The wafer processing device 1 controls the processing amount of the wafer in each processing process by setting values ​​in one or more setting items in each processing process. In other words, the values ​​set in each setting item executed by the wafer processing device 1 determine the processing action of the wafer processing device 1. The values ​​set in the setting items are also called setting values. That is, the processing amount of the wafer in each processing process is controlled by changing the setting values ​​of each setting item.

[0038] The setting items in the processing steps performed by the wafer processing apparatus 1 may include, for example, the grinding time of the workpiece W or the pressure of grinding the workpiece W. In addition, the setting items may include various items such as the rotation speed of the upper platform 2 or the rotation speed or rotation speed of the carrier 9.

[0039] The wafer processing apparatus 1 processes the wafer, whereby the characteristics of the wafer change. The characteristics of the wafer are determined by the flatness of the front or back surface of the wafer, the thickness of the wafer, etc. The characteristics of the wafer processed by the wafer processing apparatus 1 are also referred to as post-processing characteristics.

[0040] When the wafer processing device 1 performs one processing step, a plurality of setting items in the processing step may be interrelated and affect the characteristics of the wafer after processing. In addition, when the wafer processing device 1 performs a plurality of processing steps, the setting items of each processing step may be interrelated and affect the characteristics of the wafer after processing. In addition, in the wafer manufacturing system 100, the setting items of the processing steps performed by the plurality of wafer processing devices 1 may be interrelated and affect the characteristics of the wafer after processing.

[0041] The wafer processing device 1 of the present embodiment may also be provided with a calculation unit 13 for determining the time point at which the grinding of both sides of the workpiece W is completed during the grinding of both sides of the workpiece W. The calculation unit 13 is connected to the control unit 12. The calculation unit 13 obtains the workpiece thickness data measured by the workpiece thickness gauge 11 and determines the time point at which the grinding of both sides of the workpiece W is completed. The control unit 12 may also terminate the processing action of the workpiece W performed by the wafer processing device 1 at the time point determined by the calculation unit 13. The determination of the time point at which the grinding of both sides of the workpiece W is completed is also called end point detection. The calculation unit 13 may determine the time point at which the grinding of both sides of the workpiece W is completed based on the thickness of the workpiece W as described above, or may determine it as the time point at which a specified time has passed since the thickness of the workpiece W meets the specified conditions. By setting the time for continuing grinding from the time point at which the end point is detected as a processing condition of the wafer processing device 1, the post-processing characteristics of the wafer processed by the wafer processing device 1 can be adjusted.

[0042] (Configuration Example of Management Device 20)

[0043] The management device 20 includes a control unit 22. The control unit 22 determines the parameters for determining the processing conditions of the wafer processing device 1 and outputs them to the wafer processing device 1. The control unit 22 is configured to be able to communicate with the control unit 12 of the wafer processing device 1. The control unit 22 may include at least one processor. The processor is capable of executing programs that implement various functions of the control unit 22. The processor may be implemented as a single integrated circuit. An integrated circuit is also referred to as an IC (Integrated Circuit). The processor may be implemented as a plurality of integrated circuits and discrete circuits that can be connected in a communicative manner. The processor may be implemented based on various other known technologies.

[0044] The management device 20 may further include a storage unit 24. The storage unit 24 stores, for example, measurement results of wafer characteristics measured by an external wafer measurement device. The storage unit 24 may include an electromagnetic storage medium such as a magnetic disk, or a memory such as a semiconductor memory or a magnetic memory. The storage unit 24 may include a non-temporary computer-readable medium. The storage unit 24 stores various information and programs executed by the control unit 22. The storage unit 24 may function as a workpiece storage of the control unit 22. At least a portion of the storage unit 24 may also be configured separately from the control unit 22.

[0045] The management device 20 may also include a communication unit 26 for sending and receiving data between the wafer processing device 1 or an external device. The communication unit 26 can be connected to other devices via a network so as to be able to communicate. The communication unit 26 can be connected to other devices so as to be able to communicate by wire or wirelessly. The communication unit 26 may include a communication module connected to a network or other devices. The communication module may include a communication interface such as a LAN (Local Area Network). The communication module may also include a communication interface for contactless communication such as infrared communication or NFC (Near Field communication). The communication module may also implement communication through various communication methods such as 4G or 5G. The communication method performed by the communication unit 26 is not limited to the above-mentioned examples, but may also include various other methods.

[0046] (Operation Example of Management Device 20)

[0047] The wafer processing device 1 processes the wafer (workpiece W). The post-processing characteristics of the wafer are determined by the processing conditions applied to the wafer. In the case where the wafer manufacturing system 100 includes a plurality of wafer processing devices 1 that perform the same processing, the wafer is processed by a certain wafer processing device 1. That is, the processing conditions applied to the wafer include information on selecting the wafer processing device 1 to be used in the processing of the wafer from among the plurality of wafer processing devices 1. In addition, the processing conditions applied to the wafer include setting items when the selected wafer processing device 1 processes the wafer.

[0048] When a certain type of wafer is manufactured by the wafer processing device 1, the characteristics of the wafer after processing need to meet the specifications of the type. In the wafer manufacturing system 100 related to the present embodiment, the control unit 22 of the management device 20 determines the processing conditions applied to the wafer so that the characteristics of the wafer after processing meet the specifications of the specified type. The control unit 22 outputs the processing conditions to the wafer processing device 1 selected as the processing conditions. The wafer processing device 1 processes the wafer based on the processing conditions.

[0049] <Indicators showing wafer characteristics>

[0050] The index indicating the post-processing characteristics of the wafer may include, for example, an index indicating the flatness of the wafer. The index indicating the flatness of the wafer is also referred to as a flatness index.

[0051] The flatness index of the wafer may include, for example, the amount of unevenness. The amount of unevenness is an index indicating the degree of unevenness in the overall shape of the wafer. The amount of unevenness is obtained by calculating the difference between the value of the even function at the center of the wafer and the value of the even function at the periphery of the wafer on the basis of approximating the relationship between the thickness of the wafer and the radial position of the wafer on the wafer with an even function. At this time, if the calculated value is a positive value, the wafer is defined as convex. If the calculated value is a negative value, the wafer is defined as concave. Moreover, the magnitude of the absolute value of the calculated value indicates the degree of unevenness. The flatness index of the wafer may include, for example, peripheral flatness. Peripheral flatness is an index indicating the flatness of the peripheral portion of the wafer. Peripheral flatness can be represented, for example, by ESFQD (EdgeSite flatness Front reference least sQuare Deviation; edge portion flatness front reference least squares deviation). ESFQD is an index for evaluating the distance between the reference plane in each portion and the front face of the wafer on the basis of dividing the peripheral portion of the wafer into multiple portions. The smaller the maximum value of the absolute value of ESFQD, the higher the flatness of the wafer.

[0052] In the wafer manufacturing system 100 related to the present embodiment, it is assumed that the indicators representing the post-processing characteristics of the wafer include the amount of unevenness and the peripheral flatness. The amount of unevenness is also referred to as the first indicator. The peripheral flatness is also referred to as the second indicator. As described above, the amount of unevenness represents the unevenness of the front surface of the wafer. The peripheral flatness represents the flatness of the peripheral portion of the wafer. Figure 4 As shown in the example, the unevenness of the front surface of the polished wafer is related to the shape of the peripheral edge of the wafer. Figure 4 4 wafer front shapes (A) to (D) are shown in FIG. Figure 4 In FIG. 1 , the dotted line indicates the position of the front side of the wafer when it becomes flat (reference plane). The solid line indicates the cross-sectional shape of the front side of the wafer. Figure 4 The left side of the dotted line indicating the reference plane is located at the center of the wafer, and the right side is located at the outer periphery of the wafer.

[0053] Figure 4 (A) and (B) show a shape in which the front surface of the wafer is lower than the reference surface (the front surface shape becomes a concave shape) and the peripheral edge of the wafer is higher than the reference surface. Figure 4 In the comparison between (A) and (B), the concave shape of the front side of the wafer is deeper in (A) than in (B). In addition, the shape of the peripheral edge of the wafer is higher in (A) than in (B). That is, the deeper the concave shape of the front side of the wafer, the higher the peripheral edge of the wafer. The state in which the peripheral edge of the wafer is high is also called RollUp.

[0054] Assume that when the shape of the front side of the wafer is Figure 4 When the shape is concave as shown in (A) and (B), the concave-convex amount is a negative value. Figure 4 When the shape is higher than the reference surface as shown in (A) and (B), the outer peripheral flatness is a positive value. Figure 4 In the comparison between (A) and (B), the concavo-convex amount is smaller in (A) than in (B). The absolute value of the concavo-convex amount is larger in (A) than in (B). The peripheral flatness is larger in (A) than in (B). That is, there is a relationship that the smaller the concavo-convex amount, the larger the peripheral flatness.

[0055] Figure 4 (C) and (D) show a shape where the front surface of the wafer is higher than the reference surface (the front surface shape is convex) and the peripheral edge of the wafer is lower than the reference surface. Figure 4 In the comparison between (C) and (D), the convex shape of the front side of the wafer is higher in (D) than in (C). In addition, the peripheral edge of the wafer is lower in (D) than in (C). That is, the higher the convex shape of the front side of the wafer, the lower the peripheral edge of the wafer. The state in which the peripheral edge of the wafer is low is also called RollOff.

[0056] Assume that when the shape of the front side of the wafer is Figure 4 When the shape is convex as shown in (C) and (D), the concavo-convex amount is a positive value. Figure 4 When the shape is lower than the reference surface as shown in (C) and (D), the outer peripheral flatness is a negative value. Figure 4 In the comparison between (C) and (D), the amount of unevenness is larger in (D) than in (C). The peripheral flatness is smaller in (D) than in (C). The absolute value of the peripheral flatness is larger in (D) than in (C). That is, there is a relationship that the larger the amount of unevenness is, the smaller the peripheral flatness is.

[0057] If we refer to the above Figure 4To summarize, in a wafer processed by the wafer processing apparatus 1 of this embodiment, the shape of the concavo-convex shape on the front surface of the wafer is related to the height of the wafer peripheral edge. In addition, the amount of concavo-convexity is related to the peripheral flatness. Figure 4 On the right side of each waveform from (A) to (D), there are arrows indicating the tendency of changes in the values ​​of the concavo-convex amount and the peripheral flatness. The value of the concavo-convex amount and the value of the peripheral flatness tend to change inversely. In this embodiment, it is assumed that the longer the polishing time performed by the wafer processing device 1 is, the greater the value of the concavo-convex amount and the smaller the value of the peripheral flatness.

[0058] The flatness index of the wafer is not limited to the above examples, and may also include GBIR (Global Backside Ideal Range), ESFQR (Edge flatness metric, Sector based, Front surface referenced, least squares fit reference plane, Range of the data within sector) or Bump and other various indicators. The indicators representing the post-processing characteristics of the wafer are not limited to the flatness index, and may also include various other indicators such as the index representing the thickness of the wafer.

[0059] <Determination of Wafer Processing Apparatus 1 to be Used in Processing>

[0060] As described above, the control unit 22 of the management device 20 determines the processing conditions so that the post-processing characteristics of the wafer meet the specifications of the specified variety. In this embodiment, the control unit 22 determines the processing conditions so that the concavo-convex amount and the peripheral flatness among the indicators representing the post-processing characteristics of the wafer meet the specifications.

[0061] Here, when the wafer manufacturing system 100 includes a plurality of wafer processing devices 1, even if the same processing conditions are set for each wafer processing device 1 to process the wafer, the processed characteristics of the wafer may vary. The control unit 22 needs to consider the post-processing characteristic deviation of the wafer processed by each wafer processing device 1 and adjust the processing conditions for each wafer processing device 1 so that the post-processing characteristics of the wafer processed by each wafer processing device 1 meet the specifications of the specified variety. However, there are cases where other indicators change due to adjusting the processing conditions so that the concavo-convex amount and the peripheral flatness meet the specifications.

[0062] The control unit 22 can select a wafer processing device 1 from among a plurality of wafer processing devices 1, the post-processing characteristics of the wafer satisfying the specifications of a specified variety even without adjusting the processing conditions. The control unit 22 can apply the selected wafer processing device 1 to the processing of the wafer. The post-processing characteristics of the wafer processed by the selected wafer processing device 1 easily satisfy the specifications of a specified variety. In addition, the control unit 22 can determine for each wafer processing device 1 whether the post-processing characteristics of the wafer satisfy the specifications of a specified variety even without adjusting the processing conditions. The control unit 22 can apply the wafer processing device 1 determined to satisfy the specifications to the processing of the wafer. The post-processing characteristics of the wafer processed by the wafer processing device 1 determined to satisfy the specifications of the specified variety even without adjusting the processing conditions easily satisfy the specifications of the specified variety. By making it easy for the post-processing characteristics of the wafer to satisfy the specifications of the specified variety, the processing yield of the wafer is improved.

[0063] In other words, the control unit 22 can evaluate the ease of satisfying the specifications of the processing by the wafer processing device 1. The control unit 22 can apply the wafer processing device 1 evaluated as high to the processing of the wafer. By doing so, the characteristics of the wafer after processing are also easy to meet the specifications of the specified variety. As a result, the processing yield of the wafer is improved.

[0064] Specifically, the control unit 22 selects a wafer processing device 1 whose post-processing characteristics satisfy the specifications of a specified variety even without adjusting the processing conditions, based on the performance data of the post-processing characteristics of the wafer processed by each wafer processing device 1. In addition, the control unit 22 determines whether the post-processing characteristics of the wafer satisfy the specifications of a specified variety even without adjusting the processing conditions, based on the performance data of the post-processing characteristics of the wafer processed by each wafer processing device 1. The control unit 22 can evaluate the probability that the post-processing characteristics of the wafer processed by each wafer processing device 1 satisfy the specifications, based on the performance data of the post-processing characteristics of the wafer processed by each wafer processing device 1. The control unit 22 can determine the wafer processing device 1 to be used in the processing of a specified variety of wafers by selection, judgment, or evaluation.

[0065] The control unit 22 can use the actual performance data of the post-processing characteristics of the wafer as the actual performance data of the post-processing characteristics of the wafer. Figure 5 The data showing the relationship between the concavo-convex amount and the peripheral flatness as shown above determines the wafer processing device 1 used in processing a predetermined type of wafer. Figure 5 In the graph, the horizontal axis corresponds to the concavo-convex amount. It is assumed that the sign of the concavo-convex amount value is positive (+) on the right side and negative (-) on the left side. The vertical axis corresponds to the peripheral flatness. It is assumed that the sign of the peripheral flatness value is positive (+) on the upper side and negative (-) on the lower side. It is assumed that the concavo-convex amount and the peripheral flatness value are 0 at the intersection of the horizontal axis and the vertical axis.

[0066] exist Figure 5 In the graph of , the point 30 represented by a solid (black) circular mark represents the average value of the unevenness and peripheral flatness of multiple wafers processed under the specified processing conditions in each wafer processing device 1. The area 40 represented by the ellipse surrounding the point 30 as the boundary represents the range of deviation of the unevenness and peripheral flatness of multiple wafers processed by each wafer processing device 1. The area 40 is calculated based on the standard deviation of the unevenness and peripheral flatness values ​​of multiple wafers processed under the specified processing conditions in each wafer processing device 1. Since there is a tendency that the more the unevenness becomes +, the more the peripheral flatness becomes -, the area 40 has a shape with a long axis in the direction from the upper left to the lower right of the graph.

[0067] When manufacturing a wafer of a predetermined type, it is required that the post-processing characteristics of the wafer processed by the wafer processing apparatus 1 meet the specifications. Assume that the post-processing characteristics of the wafer of the predetermined type should meet the specifications, for example, Figure 6 The specification for determining the amount of unevenness and the flatness of the outer periphery is shown in the graph. Figure 6 In the figure, the horizontal axis represents the amount of unevenness. The vertical axis represents the peripheral flatness. In addition, the two dotted lines along the vertical axis represent the upper and lower limits of the specification of the amount of unevenness. The two dotted lines along the horizontal axis represent the upper and lower limits of the specification of the peripheral flatness. In other words, the specification of the post-processing characteristics of the wafer that the specified variety should meet is represented as a rectangular range surrounded by two dotted lines in the vertical and horizontal directions.

[0068] As described above, the post-processing characteristics of a wafer are represented by an average value and a range of deviation. Here, it is assumed that the average value of the post-processing characteristics of a wafer processed by a certain wafer processing device 1 is represented by point 312, and the range of deviation is represented by region 412. It is assumed that the wafer processing device 1 is called a first processing device. Since the post-processing characteristics of the wafer processed by the first processing device extend beyond the upper limit of the specification of the peripheral flatness in region 412, there is a case where the peripheral flatness deviates in the positive direction and does not meet the specification.

[0069] Furthermore, it is assumed that the average value of the processed characteristics of the wafer processed by a certain wafer processing device 1 is represented by a point 322, and the range of the deviation is represented by a region 422. It is assumed that the wafer processing device 1 is called a second processing device. Since the processed characteristics of the wafer processed by the second processing device are within the specification due to the region 422, the specification can be satisfied even if the deviation of the unevenness amount and the peripheral flatness is taken into account.

[0070] Here, it is assumed that the deviations of the processed characteristics of the wafers processed by each wafer processing apparatus 1 are the same. In this case, the closer the average value of the processed characteristics of the wafers processed by a certain wafer processing apparatus 1 is to the center of the specification, the easier it is for the processed characteristics of the wafers processed by the wafer processing apparatus 1 to meet the specification even if the deviations are taken into account. As an indicator indicating that the average value of the processed characteristics of the wafers is close to the center of the specification, Figure 6 In the graph, the distance between the point representing the average value of the characteristics of the wafer after processing and the origin O representing the center value of the specification can be calculated. If the distance between the point representing the average value of the characteristics of the wafer after processing and the origin O representing the center value of the specification is short, it means that the average value of the characteristics of the wafer after processing is close to the center value of the specification.

[0071] Assume that Figure 6 In the graph, the scale of the horizontal axis representing the concavo-convex amount and the scale of the vertical axis representing the peripheral flatness are each normalized so that the width of the specification of the concavo-convex amount is equal to the width of the specification of the peripheral flatness. In this case, the distance is calculated as the square root of the sum of the square of the concavo-convex amount and the square of the peripheral flatness. In other words, the distance can be calculated as the length of a two-dimensional vector whose elements are the values ​​of the concavo-convex amount and the peripheral flatness representing the post-processing characteristics in a two-dimensional space where the point representing the center value of the specification is located at the origin.

[0072] The method of calculating the distance is not limited to this example. A graph showing the post-processing characteristics of a wafer may also be as follows: Figure 6 As shown in the example, there is a coordinate system that is normalized so that the widths of the two specifications are equal, but there may also be a coordinate system with different widths of the two specifications. Regardless of the ratio of the widths of the specifications in the chart, the distance can be calculated by weighting the difference between the amount of concavity and the center value of the specification and the difference between the peripheral flatness and the center value of the specification. In addition, when the post-processing characteristics are represented by only one indicator, the distance can be calculated as the absolute value of the difference between the center of the specification of the indicator and the value of the indicator. When n is a natural number greater than 2 and the post-processing characteristics are represented by n indicators, the distance can be calculated in an n-dimensional space where the point representing the center of the specification is located at the origin as the length of an n-dimensional vector whose elements are the values ​​of each of the n indicators representing the post-processing characteristics.

[0073] When the processed characteristics are represented by n indicators, the graph has axes corresponding to the n indicators. For example, when the number of indicators determining the processed characteristics is n, the graph has n axes. The control unit 22 may actually generate and display the graph, or may virtually generate the graph as an internal process.

[0074] The point 312 indicating the average value of the post-processing characteristics of the wafer processed by the first processing device is located on a single-point dashed circle whose center is located at the origin O and whose radius is R3. That is, the distance from the origin O indicating the center value of the specification of the wafer of the specified variety to the point 312 indicating the average value of the post-processing characteristics of the wafer processed by the first processing device is represented by R3. In addition, the point 322 indicating the average value of the post-processing characteristics of the wafer processed by the second processing device is located on a single-point dashed circle whose center is located at the origin O and whose radius is R2. That is, the distance from the origin O indicating the center value of the specification of the wafer of the specified variety to the point 322 indicating the average value of the post-processing characteristics of the wafer processed by the second processing device is represented by R2.

[0075] exist Figure 6 In this case, the distance from the origin O to the point 322 representing the average value of the post-processing characteristics of the wafer processed by the second processing device is shorter than the distance from the origin O to the point 312 representing the average value of the post-processing characteristics of the wafer processed by the first processing device.

[0076] Under the assumption that the processing conditions of the first processing device and the second processing device are unchanged, both the average value of the post-processing characteristics of the wafer processed by the first processing device and the average value of the post-processing characteristics of the wafer processed by the second processing device do not change. Therefore, when the candidates of the wafer processing device 1 for processing a predetermined type of wafer are only the first processing device and the second processing device, under the assumption that the processing conditions are unchanged, the control unit 22 determines that the post-processing characteristics of the wafer processed by the second processing device are more likely to meet the specifications than the post-processing characteristics of the wafer processed by the first processing device, and determines the second processing device as the wafer processing device 1 for processing the predetermined type of wafer.

[0077] However, the processing conditions of the first processing device or the second processing device can be changed. For example, the processing time can be changed as a processing condition. The processing conditions can be changed manually. In the case where the wafer processing device 1 is equipped with a computing unit 13, the processing conditions can also be automatically changed by performing endpoint detection by the computing unit 13. By changing the processing conditions, the average value of the post-processing characteristics of the wafers processed by each device can be adjusted.

[0078] When the processing conditions of the wafer processing apparatus 1 are changed to various conditions, a set of points representing the post-processing characteristics of the wafer processed by the wafer processing apparatus 1 can form a predetermined trajectory in a graph representing the post-processing characteristics. The post-processing characteristics of the wafer processed by changing the processing conditions to various conditions can be obtained by measuring the post-processing characteristics of the wafer processed by actually setting the processing conditions to various conditions in the wafer processing apparatus 1 and processing under each condition. The post-processing characteristics of the wafer processed by changing the processing conditions to various conditions can also be obtained by calculating the post-processing characteristics of the wafer processed by virtually setting the processing conditions to various conditions in the wafer processing apparatus 1 and processing under each condition by simulation.

[0079] The prescribed trajectory of the first processing device is Figure 6 The trajectory 31T is represented by a double-dashed line in the graph of FIG. The trajectory 31T includes a point 312. The average value of the post-processing characteristics of the wafer processed by the first processing device can be adjusted to the value represented by the point located on the trajectory 31T by adjusting the processing conditions. In addition, the predetermined trajectory of the second processing device is Figure 6 The trajectory 32T is represented by a double-dashed line in the graph of FIG. The trajectory 32T includes a point 322. The average value of the post-processing characteristics of the wafer processed by the second processing apparatus can be adjusted to a value represented by the point located on the trajectory 32T by adjusting the processing conditions.

[0080] By changing the processing conditions, the point representing the average value of the post-processing characteristics of the wafer processed by the wafer processing device 1 can be brought close to the origin O. The processing conditions of the first processing device can be adjusted so that the average value of the post-processing characteristics of the wafer processed by the first processing device becomes the value represented by the point 311 closest to the origin O among the points on the trajectory 31T. The range of the deviation of the post-processing characteristics of the wafer processed by the first processing device with the processing conditions adjusted is represented by the area 411. In addition, the processing conditions of the second processing device can be adjusted so that the average value of the post-processing characteristics of the wafer processed by the second processing device becomes the value represented by the point 321 closest to the origin O among the points on the trajectory 32T. The range of the deviation of the post-processing characteristics of the wafer processed by the second processing device with the processing conditions adjusted is represented by the area 421.

[0081] Point 311 indicating the average value of the post-processing characteristics of the wafer processed by the first processing device with the processing conditions adjusted is located on a single-point dashed line circle with the center located at the origin O and the radius R1. That is, the distance from the origin O indicating the center value of the specification of the wafer of the specified variety to point 311 indicating the average value of the post-processing characteristics of the wafer processed by the first processing device with the processing conditions adjusted is represented by R1. In addition, point 321 indicating the average value of the post-processing characteristics of the wafer processed by the second processing device with the processing conditions adjusted is located outside the single-point dashed line circle with the center located at the origin O and the radius R1. That is, the distance from the origin O indicating the center value of the specification of the wafer of the specified variety to point 311 indicating the average value of the post-processing characteristics of the wafer processed by the second processing device with the processing conditions adjusted is a value greater than R1. In this case, the distance from the origin O to point 321 is shorter than the distance from the origin O to point 311. Therefore, when the only candidates for the wafer processing apparatus 1 for processing a specified type of wafer are the first processing apparatus and the second processing apparatus, the control unit 22 determines that, even taking into account the deviation of the post-processing characteristics, the post-processing characteristics of the wafer processed by the first processing apparatus with adjusted processing conditions are more likely to meet the specifications than the post-processing characteristics of the wafer processed by the second processing apparatus, and determines the first processing apparatus as the wafer processing apparatus 1 for processing the specified type of wafer.

[0082] Assume that the average value of the post-processing characteristics of the wafer processed by a certain wafer processing device 1 is represented by a point 332 and the range of the deviation is represented by an area 432. Assume that the wafer processing device 1 is called a third processing device. The point 332 representing the average value of the post-processing characteristics of the wafer processed by the third processing device is located on a single-point dashed line circle whose center is located at the origin O and whose radius is R3. That is, the distance from the origin O representing the center value of the specification of the wafer of a predetermined variety to the point 312 representing the average value of the post-processing characteristics of the wafer processed by the third processing device is represented by R3.

[0083] The distance between the point 332 indicating the average value of the post-processing characteristics of the wafer processed by the third processing apparatus and the origin O is the same as the distance between the point 312 indicating the average value of the post-processing characteristics of the wafer processed by the first processing apparatus and the origin O. Therefore, when the processing conditions of the first processing apparatus and the third processing apparatus are not changed, the control unit 22 regards the first processing apparatus and the third processing apparatus as the wafer processing apparatus 1 that processes a predetermined type of wafer as apparatuses having equivalent performance.

[0084] Here, the prescribed trajectory of the third processing device is Figure 6The trajectory 33T is represented by a double-dashed line in the graph of . The trajectory 33T includes a point 332. By adjusting the processing conditions, the average value of the post-processing characteristics of the wafer processed by the third processing device can be adjusted to a value represented by a point located on the trajectory 33T. The range of the deviation of the post-processing characteristics of the wafer processed by the third processing device with the processing conditions adjusted is represented by an area 431. The point 331 representing the average value of the post-processing characteristics of the wafer processed by the third processing device with the processing conditions adjusted is located outside the circle of the single-dashed line whose center is located at the origin O and whose radius is R1. That is, the distance from the origin O representing the center value of the specification of the wafer of the specified variety to the point 331 representing the average value of the post-processing characteristics of the wafer processed by the third processing device with the processing conditions adjusted is a value greater than R1. In this case, the distance from the origin O to the point 311 is shorter than the distance from the origin O to the point 331. Therefore, the control unit 22 determines that, even taking into account the deviation of the post-processing characteristics, the post-processing characteristics of the chip processed by the first processing device with adjusted processing conditions are easier to meet the specifications than the post-processing characteristics of the chip processed by the third processing device, and determines the first processing device as the chip processing device 1 for processing the specified type of chips.

[0085] Tracks 31T and 32T Figure 6 In the figure, the track 31T and the track 32T are shown as straight lines, but they can also be shown as curves. Figure 6 The center extends to the upper left and lower right, but is not limited to Figure 6 For example, the tracks 31T and 32T may extend toward the lower left and the upper right, or may extend in the left-right direction or the up-down direction. The tracks 31T and 32T may be straight lines extending in different directions, or may be different curves.

[0086] The processing conditions of each wafer processing device 1 when processing a wafer of a specified variety can be adjusted so that the point representing the post-processing characteristics of the wafer is closest to the origin O. The control unit 22 calculates the shortest distance between the point representing the post-processing characteristics of the wafer and the origin O that can be achieved when setting various processing conditions and processing a wafer of a specified variety for each wafer processing device 1. The shorter the shortest distance calculated by the wafer processing device 1 when processing a wafer of a specified variety, the more suitable the wafer processing device 1 is for processing the wafer of the specified variety. That is, the calculated shortest distance represents the suitability of the wafer processing device 1 for processing the wafer of the specified variety. The minimum distance that can be achieved when the wafer processing device 1 processes the wafer of the specified variety is also called the suitability of the wafer processing device 1 for the specified variety.

[0087] The post-processing characteristics of the wafer adjusted to be closest to the origin O are the best post-processing characteristics when each wafer processing device 1 processes a wafer of a specified type, and are also called the optimal characteristics. The control unit 22 can select the post-processing characteristics closest to the center value of the specification of the wafer of the specified type from the post-processing characteristics when the processing conditions of each wafer processing device 1 are changed as the optimal characteristics. The point indicating the optimal characteristics when each wafer processing device 1 processes a wafer of a specified type is at Figure 6 In other words, the line 30S indicating the optimal characteristics is drawn as a collection of points indicating the optimal characteristics when each wafer processing apparatus 1 processes a wafer of a predetermined type. The line 30S indicating the optimal characteristics is located on the line 30S indicated by the dotted line in the graph of FIG. Figure 6 Although it is represented as straight lines extending toward the lower left and the upper right in the figure, it is not limited to this. It may be represented as straight lines extending toward various directions or as curved lines.

[0088] The control unit 22 adjusts the processing conditions for each wafer processing device 1 so that the point representing the post-processing characteristics of the wafer is closest to the origin O, thereby obtaining the optimal characteristics when processing a predetermined type of wafer. Figure 6 In such a graph, points representing the optimal characteristics when each wafer processing device 1 processes a wafer of a specified type are plotted, and a line 30S representing the optimal characteristics is generated. The control unit 22 may assign a rank to each point on the line 30S representing the optimal characteristics in order from near to far from the origin O. It is assumed that the control unit 22 assigns a higher rank to a point closer to the origin O. The control unit 22 determines that the wafer processing device 1 corresponding to the point to which the high rank is assigned has a high suitability for processing the wafer of the specified type.

[0089] Specifically, in Figure 6 In the example of , point 311 represents the optimal characteristic when the first processing device processes a wafer of a specified type. In addition, point 321 represents the optimal characteristic when the second processing device processes a wafer of a specified type. Point 311 is closer to the origin O than point 321. Therefore, the control unit 22 assigns a higher priority to point 311 than to point 321. As a result, the control unit 22 determines that the first processing device corresponding to point 311 has a higher suitability for processing the wafer of the specified type than the second processing device corresponding to point 321.

[0090] In addition, point 331 represents the optimal characteristic when the third processing device processes a wafer of a predetermined type. Point 331 is farther from the origin O than point 311 and point 321. Therefore, the control unit 22 assigns a lower rank to point 331 than to point 311 and point 321. As a result, it is determined that the third processing device corresponding to point 331 is not suitable for processing the wafer of the predetermined type compared to the first processing device corresponding to point 311 and the second processing device corresponding to point 321.

[0091] The control unit 22 may set the first processing device to be the first, the second processing device to be the second, and the third processing device to be the third in terms of suitability for processing a specified type of wafer. When the required number of wafer processing devices 1 for processing a specified type of wafer is determined, the control unit 22 may select the required number of wafer processing devices 1 in sequence from the wafer processing devices 1 corresponding to the points assigned a high rank. The control unit 22 may determine the selected required number of wafer processing devices 1 as the wafer processing devices 1 for processing the specified type of wafer. Figure 6 In the example of , when the required number is one, the control unit 22 determines only the first processing device whose suitability for processing a predetermined type of wafer is ranked first as the wafer processing device 1 for processing the predetermined type of wafer. When the required number is two, the control unit 22 determines the first processing device whose suitability for processing a predetermined type of wafer is ranked first and the second processing device whose suitability for processing a predetermined type of wafer is ranked second as the wafer processing device 1 for processing the predetermined type of wafer.

[0092] As described above, the control unit 22 can determine the wafer processing device 1 that processes a wafer of a specified variety. Specifically, the control unit 22 obtains the post-processing characteristics of the wafer processed when various processing conditions are set virtually or actually for each wafer processing device 1. The control unit 22 calculates the distance between the average value of the post-processing characteristics of the wafer processed when various processing conditions are set and the center value of the specification that the processing conditions of the wafer of a specified variety should meet for each wafer processing device 1. The control unit 22 calculates the minimum distance that can be achieved when various processing conditions are set and the wafer of a specified variety is processed for each wafer processing device 1. The shorter the minimum distance calculated for each wafer processing device 1, the more suitable each wafer processing device 1 is for processing the wafer of a specified variety. The control unit 22 uses the minimum distance calculated for each wafer processing device 1 as an indicator to assign a ranking of processing suitability for the wafer of a specified variety to each wafer processing device 1. The control unit 22 selects a wafer processing device 1 from a plurality of wafer processing devices 1 in descending order of processing suitability for a predetermined type of wafer, and determines the wafer processing device 1 to process the predetermined type of wafer. By doing so, the control unit 22 can consider individual differences among the wafer processing devices 1, and can allocate a wafer processing device 1 with high suitability according to the type of specification that the processing characteristics of the predetermined type of wafer should satisfy. As a result, the quality of the wafer can be improved.

[0093] <Allocation of Wafer Processing Equipment 1 When Manufacturing Multiple Products>

[0094] In the wafer manufacturing system 100, multiple types of wafers can be manufactured. For example, it is assumed that wafers of type 1, type 2, and type 3 are manufactured. In this case, in the wafer manufacturing system 100, each of the multiple wafer processing devices 1 is allocated for the manufacture of each type. The control unit 22 allocates each wafer processing device 1 to the processing of each type.

[0095] The change in the state of the wafer processing apparatus 1 can change the post-processing characteristics of the wafer processed by the wafer processing apparatus 1. The control unit 22 can change the allocation of each wafer processing apparatus 1 based on the change in the post-processing characteristics of the wafer processed by the wafer processing apparatus 1.

[0096] like Figure 7 As shown, it is assumed that the allocation of each wafer processing device 1 is represented as a map. The map on the left and the map on the right respectively represent the allocation of each wafer processing device 1 at different time points. The eighteen cells of the map correspond to the eighteen wafer processing devices 1 included in the wafer manufacturing system 100. The cells represented by the cross-section lines (A) of the grid correspond to the wafer processing devices 1 assigned to the manufacture of the first variety of wafers. The cells represented by the cross-section lines (B) of the right rising oblique lines correspond to the wafer processing devices 1 assigned to the manufacture of the second variety of wafers. The cells represented by the cross-section lines (C) of the oblique grid correspond to the wafer processing devices 1 assigned to the manufacture of the third variety of wafers.

[0097] The control unit 22 changes which type of wafer manufacturing each wafer processing device 1 is assigned to, based on changes in the post-processing characteristics of the wafers processed by each wafer processing device 1. Specifically, the control unit 22 can generate a graph that plots points representing the post-processing characteristics of each wafer of the first, second, and third types. It is assumed that the origin of the graph of each type represents the center value of the specification of each type of wafer. The control unit 22 can plot points representing the post-processing characteristics of the wafers processed by each wafer processing device 1 in the graph of each type. The control unit 22 can plot points representing the optimal characteristics when each wafer processing device 1 processes each type of wafer in the graph of each type. The control unit 22 can generate and represent the points in the graph of each type. Figure 6 The line 30S corresponds to the line of optimal characteristics.

[0098] The control unit 22 calculates the distance between the point indicating the optimal characteristic when each wafer processing device 1 processes each type of wafer and the origin in the graph of each type. The control unit 22 assigns a ranking to each point in the order of the distance from short to long. The ranking assigned to each point corresponds to the ranking of the suitability of each wafer processing device 1 corresponding to each point to process each type of wafer. The control unit 22 sequentially allocates the number of wafer processing devices 1 required to process each type of wafer, starting from the wafer processing device 1 with the highest suitability to process each type of wafer.

[0099] like Figure 7 As illustrated, when the wafer processing device 1 is assigned to process the first type, the second type, and the third type, the control unit 22 can assign a ranking of processing suitability to the wafer processing device 1 for each type. Figure 7 In the example, the number of wafer processing devices 1 required for processing of each variety is six. The control unit 22 may assign the wafer processing device 1 ranked first in processing suitability for the first variety to processing of the first variety, the wafer processing device 1 ranked first in processing suitability for the second variety to processing of the second variety, and the wafer processing device 1 ranked first in processing suitability for the third variety to processing of the third variety. The control unit 22 may re-assign the order of processing suitability of each variety to the remaining wafer processing devices 1, assign the wafer processing device 1 ranked first in processing suitability for the first variety to processing of the first variety, assign the wafer processing device 1 ranked first in processing suitability for the second variety to processing of the second variety, and assign the wafer processing device 1 ranked first in processing suitability for the third variety to processing of the third variety. The control unit 22 may repeatedly perform the ranking of process suitability and the allocation to each type of process until the number of wafer processing apparatuses 1 allocated to each type of process reaches six.

[0100] The control unit 22 may allocate two or more wafer processing devices 1 together for each variety in descending order of processing suitability. The control unit 22 may also allocate six wafer processing devices 1 together for processing of the first variety in descending order of processing suitability, allocate six wafer processing devices 1 together for processing of the second variety among the remaining wafer processing devices 1 in descending order of processing suitability, and allocate the remaining six wafer processing devices 1 for processing of the third variety.

[0101] As a result of the above-described operation, the control unit 22 Figure 7 The allocation represented by the mapping diagram on the left side of is changed to the allocation represented by the mapping diagram on the right side. Specifically, the control unit 22 changes one of the six wafer processing devices 1 allocated to the first variety to the allocation to the second variety, and changes one of the six wafer processing devices 1 allocated to the third variety. In addition, the control unit 22 changes one of the six wafer processing devices 1 allocated to the second variety to the allocation to the first variety, and changes one of the six wafer processing devices 1 allocated to the third variety to the allocation to the first variety. In addition, the control unit 22 changes one of the six wafer processing devices 1 allocated to the third variety to the allocation to the first variety, and changes one of the six wafer processing devices 1 allocated to the second variety to the allocation to the second variety.

[0102] <Actions based on processing results>

[0103] The wafer processing apparatus 1 is used to process a wafer to newly process a wafer. The control unit 22 of the management device 20 can obtain the post-processing characteristics of the wafer newly processed by the wafer processing apparatus 1.

[0104] The control unit 22 may also adjust the processing time of the wafer processing device 1 based on the post-processing characteristics of the wafer newly processed by the wafer processing device 1. The control unit 22 may extend the processing time of the wafer processing device 1 when the concavo-convex amount of the newly processed wafer is small or the outer peripheral flatness is large. The control unit 22 may shorten the processing time of the wafer processing device 1 when the concavo-convex amount of the newly processed wafer is large or the outer peripheral flatness is small. By doing so, the post-processing characteristics of the wafer become easier to enter the specifications. As a result, the processing yield of the wafer can be improved.

[0105] The control unit 22 can update the data indicating the relationship between at least two indicators based on the post-processing characteristics of the wafer newly processed by the wafer processing device 1. The control unit 22 can re-evaluate the processing suitability of the wafer processing device 1 based on the updated data. By doing so, the state of the wafer processing device 1 can be reflected in the evaluation result. As a result, the processing yield of the wafer can be improved.

[0106] (Example of the management procedure)

[0107] The control unit 22 of the management device 20 can execute Figure 8 The management method in the order of the flowchart illustrated is used to manage the wafer processing apparatus 1. The management method may be realized as a management program that is executed by the control unit 22.

[0108] The control unit 22 obtains performance data of post-processing characteristics of wafers processed by each wafer processing apparatus 1 (step S1). The control unit 22 obtains post-processing characteristics of wafers processed by the wafer processing apparatus 1 with the processing conditions changed to various conditions (step S2).

[0109] The control unit 22 calculates the distance between the point representing the post-processing characteristic plotted in the graph with the point representing the center value of the specification of the wafer of the specified variety as the origin and the origin of the graph (step S3). The control unit 22 sets the processing conditions for each wafer processing device 1 so that the distance between the point representing the post-processing characteristic and the origin becomes the shortest, and obtains the post-processing characteristic in which the distance between the point representing the post-processing characteristic of the wafer of the specified variety and the origin becomes the shortest as the optimal characteristic (step S4). Based on the obtained optimal characteristic, the control unit 22 ranks each wafer processing device 1 in descending order of suitability for processing the wafer of the specified variety (step S5).

[0110] The control unit 22 allocates the processing of the specified type of wafers to the wafer processing device 1 assigned a high priority in terms of processing suitability in order. That is, the control unit 22 allocates the wafer processing device 1 based on the priority of processing suitability (step S6). After the control unit 22 executes the order of step S6, the process ends. Figure 8 The control unit 22 may also return to the order of step S1 after executing the order of step S6, and allocate the wafer processing device 1 to process wafers of other types. The control unit 22 may also allocate the wafer processing device 1 to process wafers of multiple types in parallel.

[0111] As described above, in the wafer manufacturing system 100 related to the present embodiment, the control unit 22 of the management device 20 manages a plurality of wafer processing devices 1. The control unit 22 calculates the distance between the post-processing characteristics of the wafer processed by each wafer processing device 1 and the center value of the specification of the wafer of the specified variety. The control unit 22 determines the wafer processing device 1 assigned to the processing of the wafer of the specified variety from the plurality of wafer processing devices 1 based on the distance calculated for each wafer processing device 1. The control unit 22 can calculate the optimal characteristics of each wafer processing device 1 based on the performance data of the post-processing characteristics of the wafer, and assign the wafer processing devices 1 in the order of the optimal characteristics from the center value of the specification of the wafer of the specified variety from the nearest to the farthest. By doing so, the post-processing characteristics of the wafer become easy to enter the specification. In addition, even in the case where a plurality of indicators in a trade-off relationship such as the concave-convex amount and the peripheral flatness are determined as specifications, the post-processing characteristics of the wafer become easy to enter the specification. As a result, the processing yield of the wafer in the wafer manufacturing system 100 can be improved.

[0112] Although the embodiments of the present disclosure are described based on the drawings and embodiments, please note that anyone skilled in the art can make various modifications or changes based on the present disclosure. Therefore, please note that these modifications or changes are included in the scope of the present disclosure. For example, the functions included in each structural part or each step can be reconfigured in a logically non-contradictory manner, and multiple structural parts or steps can be combined into one or divided. Although the embodiments of the present disclosure are described with the device as the center, the embodiments of the present disclosure can also be implemented as a method including steps performed by each structural part of the device. The embodiments of the present disclosure can also be implemented as a method executed by a processor possessed by the device, a program, or a storage medium having a program recorded thereon. Please understand that these are also included in the scope of the present disclosure.

[0113] The diagrams and graphs included in this disclosure are schematic and the scales and the like do not necessarily correspond to the actual ones.

[0114] Industrial Applicability

[0115] According to the embodiments of the present disclosure, it is possible to improve the processing yield of wafers.

[0116] Description of Reference Numerals

[0117] 100-wafer manufacturing system

[0118] 1 Wafer processing device (2: upper platform, 3: lower platform, 4: rotating platform, 5: sun gear, 6: internal gear, 7: polishing pad, 8: hole, 9: carrier plate, 10: hole, 11: workpiece thickness measuring device, 12: control unit, 13: calculation unit, W: workpiece (wafer))

[0119] 20 Management device (22: control unit, 24: storage unit, 26: communication unit)

[0120] Points 30, 311, 312, 321, 322, 331, 332 indicate the characteristics after processing

[0121] 30S Optimal Characteristics Line

[0122] 31T, 32T, 33T tracks

[0123] Areas 40, 411, 412, 421, 422, 431, 432

[0124] R1, R2, R3 are the radii of the concentric circles centered at the origin.

Claims

1. A management device, characterized in that: A control unit is provided for managing a plurality of wafer processing devices; The control unit determines a wafer processing device assigned to process the wafer of the specified type from among the plurality of wafer processing devices based on the distance between the post-processing characteristics of the wafers processed by the respective wafer processing devices and the center value of the specification of the wafer of the specified type.

2. The management device according to claim 1, characterized in that: The control unit calculates the post-processing characteristics closest to the center value of the specification of the wafer of the specified variety as the optimal characteristics for each of the wafer processing devices, and determines the wafer processing device assigned to process the wafer of the specified variety in order of the distance between the optimal characteristics and the center value of the specification of the wafer of the specified variety from short to long.

3. The management device according to claim 2, characterized in that: The control unit selects, as the optimal characteristic, a processed characteristic closest to a center value of the specification of the wafer of the predetermined type from among the processed characteristics when the processing conditions of the respective wafer processing devices are changed.

4. The management device according to claim 3, characterized in that: The processing conditions are determined by performing endpoint detection by each of the wafer processing devices.

5. The management device according to any one of claims 1 to 4, characterized in that: The control unit plots points indicating the post-processing characteristics of the wafer on a graph having a center value of the specification of the wafer of the predetermined type as an origin, and calculates distances between the plotted points and the origin of the graph.

6. A management method for managing a plurality of wafer processing devices, characterized in that: The method comprises the following steps: determining a wafer processing device assigned to process the wafer of the specified type from among the plurality of wafer processing devices based on the distance between the post-processing characteristics of the wafer processed by each wafer processing device and the center value of the specification of the wafer of the specified type.

7. A wafer manufacturing system, characterized in that: A wafer processing device comprising the management device according to any one of claims 1 to 4 and a wafer processing device managed by the management device.

Images