Vacuum insulation heating reactor structure

Abstract

A sidewall assembly of a substrate processing chamber has a composite structure including an inner layer composed of a first material and including an inward facing chamber surface, an outer layer composed of a second material and surrounding the inner layer, and an intermediate layer disposed between the inner layer and the outer layer and around the inner layer, where the intermediate layer thermally insulates the outer layer from the inner layer.

Description

CROSS-REFERENCE TO RELATED APPLICATIONS

[0001] This application claims the benefit of U.S. Provisional Application No. 63 / 349,967, filed on June 7, 2022. The entire disclosure of the above application is incorporated herein by reference. Technical Field

[0002] The present disclosure relates to substrate processing systems and, more particularly, to the construction of chamber walls of substrate processing systems or reactors. Background Art

[0003] The background description provided here is for the purpose of generally presenting the background of the present disclosure. The work of the currently designated inventors within the scope described in this background section and aspects of the specification that were not determined to be prior art at the time of filing the application are neither explicitly nor implicitly admitted to be prior art against the present disclosure.

[0004] Substrate processing systems typically include multiple processing chambers (also referred to as processing modules) to perform deposition, etching, and other processes on substrates such as semiconductor wafers. Examples of processes that can be performed on a substrate include chemical vapor deposition (CVD), plasma enhanced CVD (PECVD), chemical enhanced plasma vapor deposition (CEPVD), atomic layer deposition (ALD), and plasma enhanced ALD (PEALD). Additional examples of processes that can be performed on a substrate include etching (e.g., chemical etching, plasma etching, reactive ion etching, etc.) and cleaning processes.

[0005] During processing, the substrate is placed on a substrate support, such as a pedestal, electrostatic chuck (ESC), or susceptor in a processing chamber of a substrate processing system. In some processes, during deposition, a gas mixture containing one or more precursors is introduced into the processing chamber, and a plasma is ignited to activate a chemical reaction. In other processes, during etching, a gas mixture containing an etching gas is introduced into the processing chamber, and a plasma is ignited to activate a chemical reaction. A computer-controlled robot is used to transfer substrates from one processing chamber to another in the order in which the substrates are to be processed.

[0006] Certain processes are performed in heated processing chambers. For example, the substrate support, the upper electrode or showerhead, and / or other components of the processing chamber may be actively heated. Summary of the invention

[0007] A sidewall assembly of a substrate processing chamber has a composite structure, which includes: an inner layer composed of a first material and including an inwardly facing chamber surface; an outer layer composed of a second material and surrounding the inner layer; and an intermediate layer arranged between the inner layer and the outer layer and around the inner layer, wherein the intermediate layer thermally insulates the outer layer from the inner layer.

[0008] In other features, the inner layer is composed of a first material having a first thermal conductivity, and the inward-facing chamber surface absorbs and diffuses heat generated within the substrate processing chamber; the outer layer is composed of a second material having a second thermal conductivity less than the first thermal conductivity; and the middle layer is composed of a third material having a third thermal conductivity less than the first thermal conductivity to thermally insulate the outer layer from the inner layer.

[0009] In other features, the inner layer is composed of aluminum. The outer layer is composed of aluminum. The outer layer is composed of a polymer. The middle layer is composed of a discontinuous heat capture structure. The discontinuous heat capture structure defines a plurality of interconnected cells within the middle layer. The heat capture structure is composed of one of a honeycomb structure, a structural expanded metal, a mesh structure, or a porous structure. The heat capture structure is a honeycomb structure composed of one or more of a synthetic polymer or copolymer. The honeycomb structure is composed of one or more of an aromatic polyamide, a cellulose fiber, a rayon, and a polyacrylonitrile.

[0010] In other features, a vacuum is formed in the plurality of interconnected cells of the middle layer. At least one of the inner-facing surface of the outer layer and the outer-facing surface of the inner layer comprises a super-reflective infrared coating. The coating is a barium sulfate coating. The sidewall assembly further comprises an adhesive film disposed (i) between the inner layer and the middle layer, (ii) between the middle layer and the outer layer, or (iii) between the inner layer and the middle layer and between the middle layer and the outer layer. The sidewall assembly further comprises at least one of a bottom wall and a top wall of the substrate processing chamber.

[0011] A processing chamber for a substrate processing system has a composite structure, the structure comprising: a sidewall component surrounding a reactor volume, and a susceptor disposed within the reactor volume, the susceptor comprising a heating element to heat a substrate supported on the susceptor, wherein the sidewall component comprises: an inner layer having an inwardly facing surface toward the reactor volume to absorb and diffuse heat generated within the reactor volume; an outer layer surrounding the inner layer to define a gap between the inner layer and the outer layer, and an intermediate layer disposed in the gap defined between the inner layer and the outer layer and around the inner layer, wherein the intermediate layer is composed of a discontinuous heat capture structure to thermally insulate the outer layer from the inner layer.

[0012] In other features, the inner layer is composed of aluminum, the outer layer is composed of one of a polymer and aluminum, and the middle layer is composed of a honeycomb structure, the honeycomb structure defining a plurality of interconnected cells in the middle layer. The honeycomb structure is composed of one or more of aromatic polyamide, cellulose fiber, rayon, polyacrylonitrile. The honeycomb structure is composed of expanded metal. A vacuum is formed in the gap.

[0013] Further scope of applicability of the present disclosure will become apparent from the detailed description, claims and drawings.The detailed description and specific examples are intended for purposes of illustration only and are not intended to limit the scope of the disclosure. BRIEF DESCRIPTION OF THE DRAWINGS

[0014] The present disclosure will be more fully understood from the detailed description and accompanying drawings, in which:

[0015] Figure 1 An exemplary substrate processing system according to the present disclosure is shown.

[0016] Figure 2A shows a cross-sectional side view of an exemplary processing chamber according to the present disclosure;

[0017] Figure 2B shows a top (plan) view of an exemplary processing chamber according to the present disclosure;

[0018] Figure 2C shows a cross-sectional side view of another exemplary processing chamber according to the present disclosure;

[0019] Figure 2D Show more details Figure 2A A cross-sectional view of an exemplary processing chamber of

[0020] Figure 3 An exemplary structural diagram showing a processing chamber sidewall according to the present disclosure; and

[0021] Figure 4 Steps of an exemplary method of assembling a processing chamber according to the present disclosure are described.

[0022] Among the drawings, reference numerals may be repeated to identify similar and / or identical elements. DETAILED DESCRIPTION

[0023] Typically, a resistive heating pedestal or susceptor is used to heat a substrate during semiconductor substrate processing, such as in deposition applications. The pedestal contains a heat conductor, typically made of a metal such as aluminum, and integrally houses a heater element that heats the heat conductor. The heat conductor diffuses the heat flux during the process to heat the substrate disposed on the pedestal. A combination of gas conduction and radiation between the substrate and the heated pedestal thermally couples the substrate to the pedestal. Other components, such as an upper electrode or showerhead, may also be heated to improve process uniformity.

[0024] Processing chambers (e.g., reactors) are typically made from aluminum plate stock and / or stainless steel. In one example, the processing chamber is made from aluminum plate stock using subtractive machining. In another example, the processing chamber is made by welding plates or cylindrical shells of stainless steel or aluminum to form the side walls of the processing chamber. Fabricating the processing chamber in this manner enables a high degree of geometric control of precise reactor features and relatively high temperature uniformity. However, the materials used in these processing chambers absorb a large amount of heat from the system used to heat the substrate. For example, while resistive heating technology may be 100% effective in converting electrical energy to thermal energy, only 25% of the converted thermal energy is actually used to heat the substrate support, showerhead, and substrate, while the remaining 75% is lost by being absorbed by other components (e.g., the side walls of the processing chamber).

[0025] A processing chamber according to the present disclosure includes a composite insulating (e.g., vacuum insulating) sidewall. The sidewall is composed of an inner layer facing the chamber (e.g., having a chamber-facing surface facing the interior volume of the processing chamber), an outer layer, and a vacuum insulating intermediate layer defined between the inner layer and the outer layer. For example, the inner layer is composed of high-purity aluminum to provide precise geometric features, high heat absorption to promote temperature uniformity, and minimize particle generation and minimize interference with process chemicals. The outer layer is composed of a polymer or low-cost (i.e., relative to the inner layer) aluminum. The outer layer is a layer facing the environment and is not exposed to the interior of the processing chamber. In some examples, the outer surface of the inner layer facing outward and / or the inner surface of the outer layer facing inward may have a super-reflective infrared coating, such as a barium sulfate coating.

[0026] The middle layer may comprise a honeycomb or other discontinuous structure, such as a structural expanded metal (e.g., aluminum), a grid, or a porous structure. As an example, the middle layer is composed of a honeycomb or a porous belt. Thus, the middle layer defines a plurality of interconnected cells (i.e., volumes or pores) in the gap between the inner layer and the outer layer. The gap may be evacuated or evacuated to form a vacuum between the inner layer and the outer layer. The vacuum may be formed during manufacturing. In other examples, the gap may be evacuated to a vacuum by a substrate handling system.

[0027] In this manner, the middle layer captures radiant heat emanating from the inner layer, while the vacuum defined in the gap provides thermal insulation between the inner and outer layers.

[0028] Figure 1 An example of a substrate processing system (hereinafter referred to as system 100) is shown. The system 100 as shown can be used to process a substrate using a chemical vapor deposition (CVD), plasma enhanced CVD (PECVD), chemical enhanced plasma vapor deposition (CEPVD), atomic layer deposition (ALD), or plasma enhanced ALD (PEALD) process. In other examples, the system 100 can be used to perform an etching process, a deposition process, an etching process, and the like.

[0029] The system 100 includes a processing chamber (e.g., a reactor) 101 and a gas distribution system 102. The gas distribution system 102 includes a plurality of gas sources 104, a plurality of valves 106 connected to the gas sources 104, and a plurality of mass flow controllers (MFCs) 108 connected to the valves 106. The gas sources 104 supply a plurality of gases, including process gases, precursors, purge gases, inert gases, cleaning gases, etc. The MFCs 108 control the mass flow of the gases.

[0030] In some applications, the gas distribution system 102 also includes a vapor delivery system 110 to supply one or more vaporized precursors through one or more valves 112. One or more gases from the MFC 108 and one or more vaporized precursors (when used) are supplied to a mixing manifold 114. The gas or gas mixture from the mixing manifold 114 is supplied to the processing chamber 101 through a valve assembly (e.g., a pulse valve manifold or PVM assembly) 116.

[0031] The processing chamber 101 includes a showerhead 120 and a substrate support such as a pedestal 130. The showerhead 120 is attached to the ceiling of the processing chamber 101. The showerhead 120 receives a gas or a gas mixture from the mixing manifold 114 through the valve assembly 116. The showerhead 120 includes a base 122 and a stem 124. The stem 124 extends from the center of the base 122 and is attached to the ceiling of the processing chamber 101. The base 122 is cylindrical and includes a plurality of through holes (not shown) through which the gas or the gas mixture is supplied into the processing chamber 101.

[0032] The pedestal 130 includes a base 132 and a stem 134. The stem 134 is generally cylindrical or may be Y-shaped, with a tapered portion (i.e., the top of the Y) attached to the bottom of the base 132. The stem 134 extends from the base 132 and is attached to the bottom of the processing chamber 101. The base 132 is also cylindrical. During processing, the substrate 140 is arranged on the top surface of the base 132 of the pedestal 130. The base 132 includes a heating element (e.g., an array of resistive heating elements) 150 to heat the substrate 140. In some examples, the showerhead 120 is heated (e.g., using one or more resistive heating elements).

[0033] Although not shown, the base 132 of the pedestal 130 may include lift pins to maintain, lower, and raise the substrate 140 relative to the base 132 of the pedestal 130. Alternatively, a shaft (shown and described below) extending through the shaft 132 and base 132 of the pedestal 130 may be used to maintain, lower, and raise the substrate 140 relative to the base 132 of the pedestal 130. The lift pins and shaft may be used in combination to maintain, lower, and raise the substrate 140 relative to the base 132 of the pedestal 130.

[0034] In some applications, plasma can be used to process substrate 140. System 100 includes a radio frequency (RF) system 142 for generating plasma in processing chamber 101. RF system 142 includes RF generator 144 and matching circuit 146. When pedestal 130 is grounded, RF system 142 provides RF power to showerhead 120. Alternatively, although not shown, RF power can be supplied to pedestal 130 while showerhead 120 is grounded. The RF power activates a gas or gas mixture supplied via showerhead 120 and generates plasma between showerhead 120 and substrate 140 disposed on pedestal 130.

[0035] The showerhead 120 and the pedestal 130 include temperature sensors 126, 136 to sense the temperature of the showerhead 120 and the pedestal 130. The showerhead 120 and the pedestal 130 may include cooling channels (not shown). A coolant circulates through the cooling channels to control the temperature of the showerhead 120 and the pedestal 130. A coolant supply source 160 may supply coolant to the cooling channels in the showerhead 120 and the pedestal 130 via valves 162, 164.

[0036] A vacuum pump 170 is connected to the bottom of the process chamber 101 through a valve 172. The vacuum pump 170 is used to maintain a vacuum in the process chamber 101 and to exhaust reactants and process byproducts from the process chamber 101. In addition, when vacuum chucking is used, the vacuum pump 170 is connected to the stem 134 of the pedestal 130 through a valve 174. The vacuum pump 170 maintains a vacuum in an annular volume (shown and described below) around the axis in the stem 134 of the pedestal 130 to chuck the substrate 140 to the pedestal 130.

[0037] The controller 180 controls various components of the system 100 (e.g., the gas distribution system 102, valves, the RF system 142, the heating element 150, the coolant supply 160, the vacuum pump 170, etc.) The controller 180 receives data from the temperature sensors 126, 136 and controls the temperature of the showerhead 120 and the pedestal 130 by controlling the heating element 150 and the coolant supply 160.

[0038] The processing chamber 101 according to the present disclosure includes a composite (e.g., composite, vacuum-insulated) side wall 190. As described in more detail below, the side wall 190 is composed of an inner layer facing the chamber, an outer layer, and a vacuum-insulated (i.e., heat-resistant) intermediate layer defined between the inner layer and the outer layer. The intermediate layer is configured to provide thermal insulation to minimize heat transfer from the inner layer to the outer layer, and to capture radiant heat emitted from the inner layer. In some examples, the intermediate layer includes a discontinuous (e.g., honeycomb, structural expansion, grid, porous, etc.) heat capture structure that captures radiant heat. Therefore, the intermediate layer includes a plurality of interconnected units (e.g., which are defined within the heat capture structure), which can be evacuated to provide thermal insulation. The intermediate layer provides a combination of structural rigidity between the inner layer and the outer layer, low thermal conductivity from the inner layer to the outer layer, and minimal heat loss caused by convection, conduction, and radiation heat transfer.

[0039] Although described with respect to the sidewall 190, the bottom wall or surface, the upper wall or surface (eg, the lid), and / or other structures of the process chamber 101 may also be comprised of the vacuum insulating sidewalls described below.

[0040] Figure 2A In cross-sectional side view, Figure 2B An exemplary processing chamber (e.g., a sidewall assembly for a substrate processing chamber including a composite sidewall) 200 according to the present disclosure is shown in a top (plan) view. Although shown as being generally cylindrical, the processing chamber 200 can have other shapes. The processing chamber 200 encloses a processing (e.g., reactor) volume 202.

[0041] The sidewall assembly comprising the sidewall 204 of the processing chamber 200 has a composite insulation construction as discussed above and described in more detail below. The sidewall 204 is composed of an inner layer 208, an outer layer 212, and an insulating intermediate layer 216 defined between the inner layer 208 and the outer layer 212. The inner layer 208 is composed of two sides or surfaces. The first surface of the inner layer 208 is the chamber-facing surface (i.e., the surface facing the interior volume of the processing chamber 200). The second surface opposite the first surface is facing the intermediate layer 216.

[0042] For example, the inner layer 208 is composed of aluminum, a forged aluminum alloy, stainless steel or a stainless steel alloy, a nickel-chromium alloy, etc. The outer layer 212 can be composed of a metal (e.g., a steel alloy, stainless steel, aluminum or an aluminum alloy, etc.) or a polymer. The inner layer 208 has a greater thermal conductivity than the middle layer 216 and the outer layer 212. For example, the inner layer 208 is composed of a material having a first thermal conductivity, the outer layer 212 is composed of a material having a second thermal conductivity less than the first thermal conductivity, and the middle layer 216 is composed of a third material having a third thermal conductivity less than the first thermal conductivity. In some examples, the third thermal conductivity is less than the second thermal conductivity.

[0043] In addition, despite the Figure 2A200 is shown as not including a bottom wall or surface or a top wall or surface (e.g., a lid), but a processing chamber 200 according to the present disclosure may also include a top wall and / or a bottom wall constructed in the same or similar manner as the side walls (i.e., having the same composite structure as the side walls). For example, Figure 2C An example of a processing chamber 200 (eg, a sidewall assembly) is shown including a top surface and a bottom surface, each having a composite insulation structure consisting of an inner layer 208 , an outer layer 212 , and an intermediate layer 216 .

[0044] The relative thickness of the inner layer 208, the outer layer 212, and the middle layer 216 can vary based on the application, or the overall size of the processing chamber 200, etc. For example only, each layer can have a thickness ranging from 1.0 mm to 100 mm. In one example, the inner layer 208 is thinner than the outer layer 212 and the middle layer 216.

[0045] The intermediate layer 216 is disposed within the gap 220 defined between the inner layer 208 and the outer layer 212. In one example, the intermediate layer 216 is composed of a discontinuous heat capture structure defining a plurality of interconnected cells. For example, the heat capture structure is a honeycomb structure, and the gap 220 is evacuated (e.g., evacuated) during manufacturing / assembly, so that a vacuum is formed between the inner layer 208 and the outer layer 212. In other words, a vacuum is formed in the cells defined within the honeycomb structure. In other examples, the intermediate layer 216 is composed of a continuous insulating layer, a gap that is evacuated without a honeycomb or any other structure, etc.

[0046] Figure 2D A close-up view of the construction of the side wall 204 is shown. For example, the inner layer 208, the outer layer 212 and the middle layer 216 are shown at the upper end 224 of the side wall 204. As shown, the middle layer 216 is a discontinuous heat capture structure. More specifically, the middle layer 216 is a honeycomb structure that defines a plurality of interconnected cells 228. The honeycomb structure can be composed of metal or one or more polymers and / or combinations of polymers (e.g., aromatic polyamides, cellulose fibers, rayon, polyacrylonitrile and / or other synthetic polymers or copolymers). In one example, the honeycomb structure is composed of structural expanded metal, such as structural expanded aluminum, steel or steel alloy, etc. In another example, the honeycomb structure is composed of ceramic materials (alumina, quartz, etc.).

[0047] In some examples, the outer-facing surface 232 of the inner layer 208 and / or the inner-facing surface 236 of the outer layer 212 can have a super-reflective infrared coating 240, such as a barium sulfate coating. As shown, the outer-facing surface 232 of the inner layer 208 includes the coating 240 to reflect heat from the inner layer 208 back to the interior of the processing chamber 200. Therefore, the coating 240 further reduces the heat transfer from the inner layer 208 to the intermediate layer 216.

[0048] In some examples, the middle layer 216 is attached to the inner layer 208 using a tape or adhesive film 244. For example, the adhesive film 244 is composed of a high temperature polymer. The adhesive film 244 is disposed on the outer surface 232 of the inner layer 208. The middle layer 216 is disposed on the adhesive film 244 to adhere the middle layer 216 to the inner layer 208. Although not shown, the adhesive film 244 can also be used to adhere the outer layer 212 to the middle layer 216. For example, the adhesive film 244 is disposed between the middle layer 216 and the outer layer 212.

[0049] As shown, the upper end of the inner layer 208 includes an annular edge, flange or lip 248 extending radially outward toward the outer layer 212 (i.e., at the upper end 224 of the sidewall 204). In other words, the edge 248 overlaps the outer layer 212. Conversely, a similar edge can extend radially outward from the lower end of the inner layer 208. In this way, the assembly including the inner layer 208 and the outer layer 212 defines the gap 220 and encloses the middle layer 216 within the gap 220. In other examples, the outer layer 212 may include an edge extending radially inward. In other examples, the inner layer 208 and the outer layer 212 both include complementary edges extending toward each other above and below the middle layer 216. Other suitable configurations can be used.

[0050] In this manner, the inner layer 208 and the outer layer 212 isolate the gap 220 from the atmosphere. For example, a vacuum is formed in the gap 220 during the manufacture / assembly of the processing chamber 200. The inner layer 208 and the outer layer 212 are fixedly attached together to maintain the vacuum within the gap 220. In one example, the inner layer 208 and the outer layer 212 are welded or brazed together. In another example, the outer layer 212 is attached to the inner layer 208 using a thermally insulating adhesive (e.g., thermal epoxy).

[0051] In other examples, the gap 220 can be evacuated during processing. For example, the gap 220 can have a port or valve (not shown) that selectively fluidly communicates with the vacuum pump 170. In this way, the gap 220 can be evacuated periodically (e.g., before performing a process or process step).

[0052] Figure 3 An exemplary intermediate layer 300 of one of the sidewalls 204 is shown. In this example, the intermediate layer 300 is composed of a honeycomb structure 304. In other words, the intermediate layer 300 is composed of a discontinuous heat capture structure that defines a plurality of interconnected cells 308. The intermediate layer 300 is coupled to the inner layer 312 using an adhesive film 316. The outer layer 320 is disposed on the intermediate layer 300. The intermediate layer 300 is thus enclosed within a vacuum-tight gap 324 defined between the inner layer 312 and the outer layer 320.

[0053] Thus, the honeycomb structure 304 provides structural rigidity to the sidewall 204 and, in particular, to the inner layer 312. For example, the honeycomb structure 304 is in contact with the inner layer 312, either directly or indirectly (i.e., via the membrane 316). The honeycomb structure 304 is composed of a material (e.g., aluminum) selected to absorb radiant heat emitted from the inner layer 312. In addition, the pores defined within the interconnected cells 308 further reduce heat transfer from the inner layer 312 to the outer layer 320. In examples where a vacuum is formed within the gap 324 (and the cells 308), heat transfer is even further reduced.

[0054] Figure 4 The steps of an example method 400 for assembling a process chamber assembly according to the present disclosure are shown. At step 404, an inner layer (e.g., inner layer 208) facing the chamber is formed. As an example, the inner layer is stamped from an aluminum sheet, then formed (e.g., rolled) into a cylinder, and the ends of the aluminum sheet are welded together. In another example, the inner layer is formed using a thin-walled aluminum die casting process.

[0055] At step 408, an intermediate layer (e.g., intermediate layer 216) is disposed on the inner layer. For example, the intermediate layer is a honeycomb tape that is wrapped around and adhered to the inner layer. In one example, an adhesive tape is used to adhere the intermediate layer to the inner layer.

[0056] At step 412, an outer layer is disposed around the inner layer and the intermediate layer. In one example, the outer layer is composed of aluminum formed using the same process as the inner layer (e.g., die casting or other process). In another example, the outer layer is composed of a polymer. The outer layer can be composed of a single piece or multiple pieces fused (e.g., welded) together around the inner layer and the intermediate layer.

[0057] At step 416, a vacuum is optionally formed within the chamber assembly. For example, a vacuum is formed in the gap defined between the inner layer and the outer layer. In one example, the gap is evacuated to a vacuum through a one-way port, opening, or seam, etc., located between the inner layer and the outer layer and then sealed. In another example, the gap is evacuated to a vacuum during processing (e.g., using a vacuum pump 170). At step 420, the chamber assembly is installed in a substrate processing system.

[0058] above Figure 4 The method 400 described in is only one example method of assembling a process chamber according to the principles of the present disclosure, and other methods may be used. For example, the entire composite structure may be manufactured using an additive manufacturing method. In another example, the layers of the process chamber may be coupled together using mechanical fasteners, welding, clamps, etc. In yet another example, the layers may be coupled together using a press fit or shrink fit method.

[0059] The foregoing description is merely illustrative in nature and is by no means intended to limit the present disclosure, its application or use. The broad teachings of the present disclosure can be implemented in various forms. Therefore, although the present disclosure includes specific examples, the true scope of the present disclosure should not be so limited, because when studying the drawings, the specification and the appended claims, other modifications will become apparent. It should be understood that, without changing the principles of the present disclosure, one or more steps in the method can be performed in different orders (or simultaneously). In addition, although each embodiment is described above as having certain features, any one or more of those features described relative to any embodiment of the present disclosure can be implemented in the features of any other embodiment and / or combined with the features of any other embodiment, even if the combination is not clearly described. In other words, the described embodiments are not mutually exclusive, and the replacement of one or more embodiments with each other remains within the scope of the present disclosure.

[0060] Various terms are used to describe the spatial and functional relationships between elements (e.g., between modules, between circuit elements, between semiconductor layers, etc.), including "connected," "engaged," "coupled," "adjacent," "next to," "on top of," "above," "below," and "disposed." Unless the relationship between a first and a second element is explicitly described as "direct," when such a relationship is described in the above disclosure, the relationship can be a direct relationship, in which there are no other intervening elements between the first and second elements, but can also be an indirect relationship, in which there are one or more intervening elements (spatially or functionally) between the first and second elements. As used herein, the phrase "at least one of A, B, and C" should be interpreted to mean a logical (A or B or C), using a non-exclusive logical OR, and should not be interpreted to mean "at least one of A, at least one of B, and at least one of C."

[0061] In some implementations, the controller is part of a system, which can be part of the above examples. Such a system can include a semiconductor processing device, which includes one or more processing tools, one or more chambers, one or more platforms for processing, and / or specific processing components (wafer pedestals, gas flow systems, etc.). These systems can be integrated with electronic devices for controlling their operation before, during, and after the processing of semiconductor wafers or substrates. The electronic device can be referred to as a "controller", which can control various components or subcomponents of one or more systems. Depending on the processing requirements and / or the type of system, the controller can be programmed to control any process disclosed herein, including the delivery of process gases, temperature settings (e.g., heating and / or cooling), pressure settings, vacuum settings, power settings, radio frequency (RF) generator settings, RF matching circuit settings, frequency settings, flow rate settings, fluid delivery settings, position and operation settings, wafer transfer in and out tools and other transfer tools and / or load locks connected or docked with a specific system.

[0062] Broadly speaking, a controller can be defined as an electronic device having various integrated circuits, logic, memory, and / or software that receive instructions, issue instructions, control operations, enable cleaning operations, enable endpoint measurements, etc. The integrated circuit can include a chip in the form of firmware that stores program instructions, a digital signal processor (DSP), a chip defined as an application specific integrated circuit (ASIC), and / or one or more microprocessors or microcontrollers that execute program instructions (e.g., software). The program instructions can be instructions sent to the controller in the form of various individual settings (or program files) that define operating parameters for performing a specific process on or for a semiconductor wafer or system. In some embodiments, the operating parameters can be part of a recipe defined by a process engineer to complete one or more processing steps during the manufacture of one or more (kinds of) layers, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / or dies of a wafer.

[0063] In some implementations, the controller may be part of or coupled to a computer that is integrated with the system, coupled to the system, otherwise networked to the system, or a combination thereof. For example, the controller may be in the "cloud" or all or part of a wafer fab host system that may allow remote access to wafer processing. The computer may enable remote access to the system to monitor the current progress of a manufacturing operation, check the history of past manufacturing operations, check trends or performance criteria for multiple manufacturing operations, change parameters of a current process, set processing steps to follow the current process, or start a new process. In some examples, a remote computer (e.g., a server) may provide a process recipe to the system via a network (which may include a local network or the Internet). The remote computer may include a user interface that enables input or programming of parameters and / or settings, which are then sent from the remote computer to the system. In some examples, the controller receives instructions in the form of data that specify parameters for each processing step to be performed during one or more operations. It should be understood that the parameters may be specific to the type of process to be performed and the type of tool that the controller is configured to interface with or control. Thus, as described above, the controller may be distributed, for example, by including one or more discrete controllers networked together and working toward a common purpose, such as the processes and controls described herein. An example of a distributed controller for such a purpose is one or more integrated circuits on a chamber that communicate with one or more integrated circuits remotely (e.g., at a platform level or as part of a remote computer), which combine to control the process on the chamber.

[0064] Example systems may include, but are not limited to, plasma etch chambers or modules, deposition chambers or modules, spin rinse chambers or modules, metal plating chambers or modules, cleaning chambers or modules, chamfer edge etch chambers or modules, physical vapor deposition (PVD) chambers or modules, chemical vapor deposition (CVD) chambers or modules, atomic layer deposition (ALD) chambers or modules, atomic layer etch (ALE) chambers or modules, ion implantation chambers or modules, track chambers or modules, and any other semiconductor processing system that may be associated with or used in the manufacture and / or preparation of semiconductor wafers.

[0065] As described above, depending on one or more processing steps to be performed by the tool, the controller can communicate with one or more other tool circuits or modules, other tool components, cluster tools, other tool interfaces, adjacent tools, neighboring tools, tools located throughout the factory, a host computer, another controller, or tools used in material transport to transport wafer containers to and from tool locations and / or load ports in a semiconductor manufacturing facility.

Claims

1. A sidewall assembly of a substrate processing chamber, the sidewall assembly having a composite structure, the composite structure comprising: an inner layer comprised of a first material, wherein the inner layer comprises an inwardly facing chamber surface; an outer layer composed of a second material, wherein the outer layer surrounds the inner layer; and An intermediate layer is disposed between the inner layer and the outer layer and around the inner layer, wherein the intermediate layer thermally insulates the outer layer from the inner layer.

2. The side wall assembly according to claim 1, wherein: the inner layer being composed of a first material having a first thermal conductivity, wherein the inwardly facing chamber surface absorbs and diffuses heat generated within the substrate processing chamber; The outer layer is composed of a second material having a second thermal conductivity less than the first thermal conductivity; and The middle layer is composed of a third material having a third thermal conductivity less than the first thermal conductivity to thermally insulate the outer layer from the inner layer.

3. The sidewall assembly of claim 2, wherein the inner layer is comprised of aluminum. The sidewall assembly of claim 3 , wherein the outer layer is comprised of aluminum.

5. The sidewall assembly of claim 3, wherein the outer layer is composed of a polymer.

6. The sidewall assembly of claim 1, wherein the intermediate layer is comprised of a non-continuous heat capture structure.

7. The sidewall assembly of claim 6, wherein the non-continuous heat capture structure defines a plurality of interconnected cells within the intermediate layer.

8. The sidewall assembly of claim 7, wherein the heat capture structure is comprised of one of a honeycomb structure, structural expanded metal, a lattice structure, or a porous structure.

9. The sidewall assembly of claim 7, wherein the heat capture structure is a honeycomb structure composed of one or more of a synthetic polymer or copolymer.

10. The sidewall assembly of claim 9, wherein the honeycomb structure is comprised of one or more of aromatic polyamide, cellulose fibers, rayon, and polyacrylonitrile.

11. The sidewall assembly of claim 7, wherein a vacuum is formed in the plurality of interconnected cells of the intermediate layer.

12. The sidewall assembly of claim 1, wherein at least one of the inner facing surface of the outer layer and the outer facing surface of the inner layer comprises a super reflective infrared coating.

13. The sidewall assembly of claim 12, wherein the coating is a barium sulfate coating.

14. The sidewall assembly of claim 1, further comprising an adhesive film disposed (i) between the inner layer and the middle layer, (ii) between the middle layer and the outer layer, or (iii) between the inner layer and the middle layer and between the middle layer and the outer layer.

15. The sidewall assembly of claim 1, further comprising at least one of a bottom wall and a top wall of the substrate processing chamber.

16. A processing chamber for a substrate processing system, the processing chamber having a composite structure, the structure comprising: a side wall assembly enclosing the reactor volume, and a susceptor disposed within the reactor volume, the susceptor comprising a heating element to heat a substrate supported on the susceptor, wherein the sidewall assembly comprises: an inner layer having an inwardly facing reactor volume surface to absorb and diffuse heat generated within the reactor volume; an outer layer surrounding the inner layer to define a gap between the inner layer and the outer layer, and An intermediate layer is disposed in the gap defined between the inner layer and the outer layer and around the inner layer, wherein the intermediate layer is composed of a discontinuous heat capture structure to thermally insulate the outer layer from the inner layer.

17. The process chamber of claim 16, wherein the inner layer is composed of aluminum, the outer layer is composed of one of a polymer and aluminum, and the middle layer is composed of a honeycomb structure defining a plurality of interconnected cells in the middle layer.

18. The processing chamber of claim 17, wherein the honeycomb structure is composed of one or more of aromatic polyamide, cellulose fiber, rayon, polyacrylonitrile.

19. The processing chamber of claim 17, wherein the honeycomb structure is comprised of expanded metal.

20. The processing chamber of claim 17, wherein a vacuum is formed within the gap.

Images