Beta-type silicon carbide protective layer coated RB-SiC composite material and preparation method thereof
The β-type silicon carbide protective layer is deposited on the surface of RB-SiC material through chemical vapor infiltration technology, and combined with siliconized channel processing and reaction sintering technology, it solves the problem of reduced material dimensional accuracy in the existing technology and achieves an efficient and dense protective layer. Chemicalization and structural accuracy are retained, improving the material's high-temperature performance and application range.
CN119350037AActive Publication Date: 2025-01-24CHANGCHUN INST OF OPTICS FINE MECHANICS & PHYSICS CHINESE ACAD OF SCI
Patent Information
- Application Number
- CN202411573159.2
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-11-06
- Publication Date
- 2025-01-24
- Estimated Expiration
- 2044-11-06
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Figure CN119350037A_ABST
Abstract
The invention relates to the technical field of preparation of silicon carbide composite materials, in particular to a beta-type silicon carbide protective layer coated RB-SiC composite material and a preparation method. Comprising the following steps: preparing a silicon carbide preform from silicon carbide powder; carrying out high-temperature degreasing and degumming treatment on the silicon carbide preform at 600-1000 DEG C to obtain a porous silicon carbide preform; placing the porous silicon carbide preform in a cracking furnace, and carrying out chemical vapor infiltration in a flowable mixed gas atmosphere to obtain a beta-type silicon carbide protective layer; selectively processing a siliconizing channel with the depth of 50-200 microns on the non-service surface of the preform; the prefabricated body is subjected to reactive sintering densification treatment, the sintering temperature ranges from 1420 DEG C to 1700 DEG C, and the heat preservation time ranges from 3 h to 24 h; and cooling to room temperature after sintering. The method has the advantages that silicon in RB-SiC is prevented from being exposed to a service environment, and material failure is avoided; and the dimensional precision of the component structure is not reduced while the high-performance protective layer is prepared.
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Citation Information
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