Heating substrate for atomic cluster low-temperature welding

Abstract

The invention relates to a heating substrate for atomic cluster low-temperature welding. The heating substrate comprises a red copper body, a heating rod is installed on one side of the red copper body, a clamping groove used for fixing a silicon wafer sample is formed in the reverse side of the heating rod, threaded holes are formed in the peripheral side of the clamping groove, and supporting column holes are formed in the bottom of the red copper body; one end of the connecting supporting column is inserted into the supporting column hole, and a base is installed at the bottom of the connecting supporting column; the connecting piece is mounted on the base, and a lamp holder is mounted at the top of the connecting piece. Good heat conduction performance is provided through the red copper body, the highest temperature can reach 500 DEG C through heating, heating can be conducted in vacuum, heat dissipation and heat insulation can be well achieved through the heat dissipation holes of the supporting columns, heat conducted by the red copper body at the high temperature is prevented from being conducted, temperature rising and cooling are rapid, and the service life is long. The deposited sample can be directly subjected to high-temperature heating treatment, and the process of taking out the sample and then carrying out secondary heating operation is omitted.

Description

Technical Field

[0001] The invention relates to the technical field of heating substrates, and in particular to a heating substrate for low-temperature welding of atomic clusters. Background Art

[0002] In recent years, with the rapid development of atomic manufacturing, the demand for new materials and new devices such as atomic clusters, single-atom and single-molecule devices has been increasing. The preparation of atomic clusters through beam sources has become the main means to meet the demand for atomic manufacturing materials. For example, we can sputter out atomic cluster atomic gas by magnetron sputtering, condense the atomic gas into clusters through gas phase condensation, and then focus the atomic clusters into a beam through ultrasonic expansion and ion optical systems. Atomic clusters suitable for processing are deposited during the flight. However, it is not convenient to directly perform high-temperature heating treatment on the deposited samples in the existing technology. It is usually necessary to take out the samples and heat them again, which reduces work efficiency. Summary of the invention

[0003] The purpose of the present invention is to provide a heating substrate for low-temperature welding of atomic clusters, which solves the problem of inconvenience in directly performing high-temperature heating treatment on deposited samples. The substrate can be heated to 500 degrees in a vacuum, and the temperature can be raised and lowered quickly. The deposited samples can be directly subjected to high-temperature heating treatment, eliminating the problem of taking out the samples and then performing a secondary heating operation.

[0004] In order to solve the above technical problems, the present invention provides a heating substrate for low temperature welding of atomic clusters, comprising:

[0005] A copper body, a heating rod is installed on one side of the copper body, a slot for fixing a silicon wafer sample is provided on the reverse side of the heating rod, threaded holes are provided on the peripheral side of the slot, and a support hole is provided on the bottom of the copper body;

[0006] A connecting pillar, one end of which is inserted into the pillar hole, and a base is installed at the bottom of the connecting pillar;

[0007] A connecting piece is installed on the base, and a lamp holder is installed on the top of the connecting piece.

[0008] Furthermore, a plurality of reserved holes are provided on one side of the copper body, and one end of the heating rod is installed in the reserved hole.

[0009] Furthermore, the outer wall of the connecting pillar is provided with front and rear heat dissipation holes, and four heat dissipation holes are provided on both sides of the connecting pillar, and the cross-sectional dimensions of each heat dissipation hole are 2mm in depth, 7mm in circular diameter, and 3mm in bottom;

[0010] The connecting support is made of 304 stainless steel, has a length of 50 mm, an outer diameter of 8 mm, an inner diameter of 6 mm, and a wall thickness of 1 mm.

[0011] Furthermore, two through holes are provided in the middle of the top of the lamp holder, and the diameter of the through holes is 2 mm.

[0012] Furthermore, the lamp holder is made of polytetrafluoroethylene, the bottom of the lamp holder is 30 mm long, 12 mm wide, 4 mm high, and a 4 mm notch is cut on both sides.

[0013] Furthermore, the connecting piece is in a stepped shape, the inner connecting piece is made of stainless steel, and the lamp holder is fixed on the top of the connecting piece.

[0014] The beneficial effects of the present invention are that the copper body of the heating substrate for low-temperature welding of atomic clusters provides good thermal conductivity, and the maximum temperature can be heated to 500 degrees. It can be heated in a vacuum, and the heat dissipation holes of the support columns can be used to effectively dissipate heat and insulate heat, preventing the heat conducted by the high-temperature copper body from being conducted. The temperature rises and falls quickly, and the deposited sample can be directly subjected to high-temperature heating treatment, eliminating the process of taking out the sample and then heating it again. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] The present invention is further described below in conjunction with the accompanying drawings and embodiments.

[0016] Figure 1 is a perspective view of a preferred embodiment of the present invention;

[0017] Figure 2 is a perspective view of a preferred embodiment of a connecting support of the present invention;

[0018] Figure 3 is a three-dimensional diagram of a preferred embodiment of a lamp holder of the present invention;

[0019] Figure 4 is a stereogram of a preferred embodiment of a copper body of the present invention;

[0020] Figure 5 It is a side view of a preferred embodiment of the copper body of the present invention.

[0021] In the figure:

[0022] 1. Copper body; 11. Heating rod; 12. Slot; 13. Threaded hole; 14. Support hole; 15. Reserved hole; 16. Thermocouple;

[0023] 2. Connecting pillars; 21. Base; 22. Heat dissipation holes;

[0024] 3. Connecting piece; 31. Lamp holder; 32. Through hole. DETAILED DESCRIPTION

[0025] The present invention will now be described in further detail with reference to the accompanying drawings. These drawings are simplified schematic diagrams, which only illustrate the basic structure of the present invention in a schematic manner, and therefore only show the components related to the present invention.

[0026] like Figure 1-5 As shown, a heating substrate for low-temperature welding of atomic clusters of the present invention comprises: a copper body 1, a heating rod 11 is installed on one side of the copper body 1, a slot 12 for fixing a silicon wafer sample is provided on the reverse side of the heating rod 11, a threaded hole 13 is provided on the peripheral side of the slot 12, a support hole 14 is provided at the bottom of the copper body 1; a connecting support 2, one end of the connecting support 2 is inserted into the support hole 14, and a base 21 is installed at the bottom of the connecting support 2; the base 21 is circular and is used to connect a lamp holder 31. The lamp holder 31 is made of polytetrafluoroethylene. The entire device can reach a maximum temperature of 500 degrees at a controllable temperature, and can be well insulated and dissipated from the cavity wall or other devices through the heat dissipation and heat insulation support column, so as to achieve the accuracy and safety of the results.

[0027] The connecting member 3 is installed on the base 21 , and a lamp holder 31 is installed on the top of the connecting member 3 .

[0028] The circuit passes through the lamp holder 31 and then turns out of the cavity. The copper body 1 provides good thermal conductivity, while the support column provides good heat dissipation and heat insulation performance. The polytetrafluoroethylene lamp holder 31 provides good insulation and heat insulation.

[0029] The copper body 1 is heated to 500 degrees, and the silicon wafer sample is heated. After the atomic beam deposition is completed, the sample can be directly heated in a vacuum by heating the substrate, thereby meeting the experimental requirements, and the temperature is controllable. A thermocouple 16 is installed under the copper device to detect the temperature of the copper device in real time. The temperature difference between the substrate and the actual temperature is within ±5 degrees.

[0030] A plurality of reserved holes 15 are formed on one side of the copper body 1 , and one end of the heating rod 11 is installed in the reserved hole 15 .

[0031] The outer wall of the connecting pillar 2 is provided with front and rear supporting heat dissipation holes 22, and four are provided on both sides of the connecting pillar 2. The cross-sectional dimensions of each heat dissipation hole 22 are 2mm in depth, 7mm in circular diameter, and 3mm in bottom. The connecting pillar 2 is made of 304 stainless steel, with a length of 50mm, an outer diameter of 8mm, an inner diameter of 6mm, and a wall thickness of 1mm.

[0032] Two through holes 32 are provided in the middle of the top of the lamp holder 31. The diameter of the through holes 32 is 2 mm. The through holes 32 are used for connecting the outgoing circuits.

[0033] The lamp holder 31 is made of polytetrafluoroethylene, and the bottom length of the lamp holder 31 is 30 mm, the width is 12 mm, the height is 4 mm, and a 4 mm notch is cut on both sides.

[0034] The connecting member 3 is in a stepped shape and is made of stainless steel. The lamp holder 31 is fixed on the top of the connecting member 3 .

[0035] Based on the above ideal embodiments of the present invention, the relevant staff can make various changes and modifications without departing from the technical concept of the present invention through the above description. The technical scope of the present invention is not limited to the contents of the specification, and its technical scope must be determined according to the scope of the claims.

Claims

1. A heating substrate for low temperature welding of atomic clusters, characterized in that: include: A copper body (1), a heating rod (11) is installed on one side of the copper body (1), a slot (12) for fixing a silicon wafer sample is provided on the reverse side of the heating rod (11), a threaded hole (13) is provided on the peripheral side of the slot (12), and a support hole (14) is provided on the bottom of the copper body (1); A connecting pillar (2), one end of the connecting pillar (2) is inserted into the pillar hole (14), and a base (21) is installed at the bottom of the connecting pillar (2); A connecting piece (3), the connecting piece (3) being mounted on the base (21), and a lamp holder (31) being mounted on the top of the connecting piece (3).

2. A heating substrate for low temperature welding of atomic clusters as claimed in claim 1, characterized in that: A plurality of reserved holes (15) are provided on one side of the copper body (1), and one end of the heating rod (11) is installed in the reserved hole (15).

3. A heating substrate for low temperature welding of atomic clusters as claimed in claim 2, characterized in that: The outer wall of the connecting pillar (2) is provided with front and rear supporting heat dissipation holes (22), and four heat dissipation holes are respectively provided on both sides of the connecting pillar (2), and the cross-sectional dimensions of each heat dissipation hole (22) are 2 mm in depth, 7 mm in circular diameter, and 3 mm in bottom; The connecting support (2) is made of 304 stainless steel, has a length of 50 mm, an outer diameter of 8 mm, an inner diameter of 6 mm, and a wall thickness of 1 mm.

4. A heating substrate for low temperature welding of atomic clusters as claimed in claim 3, characterized in that: Two through holes (32) are provided in the middle of the top of the lamp holder (31), and the diameter of the through holes (32) is 2 mm.

5. A heating substrate for low temperature welding of atomic clusters as claimed in claim 4, characterized in that: The lamp holder (31) is made of polytetrafluoroethylene, the bottom length of the lamp holder (31) is 30 mm, the width is 12 mm, the height is 4 mm, and a 4 mm notch is cut on both sides.

6. A heating substrate for low temperature welding of atomic clusters as claimed in claim 5, characterized in that: The connecting piece (3) is in a stepped shape and is made of stainless steel. The lamp holder (31) is fixed on the top of the connecting piece (3).

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