Method for preparing two-dimensional film layer structure and two-dimensional film layer structure
By preparing a two-dimensional film structure in an atomic layer deposition reaction chamber and performing in-situ high-temperature crystallization, the problem of poor crystallization performance under low temperature conditions is solved, efficient crystallization performance improvement and pollution avoidance are achieved, and it is suitable for a variety of materials Growth of two-dimensional film layers.
Patent Information
- Application Number
- CN202310914684.5
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2023-07-24
- Publication Date
- 2025-01-24
AI Technical Summary
In the prior art, when preparing two-dimensional film layer structures, the film prepared by the atomic layer deposition method under low temperature conditions has poor crystallinity performance, and the high-temperature annealing process is cumbersome and easily leads to wafer surface contamination.
The two-dimensional film structure is prepared in an atomic layer deposition reaction chamber, and after completion, in-situ high-temperature crystallization is performed, or the growth and crystallization processes are interleaved until the required number of cycles is reached.
The crystallization performance of each layer of the two -dimensional membrane structure is improved, and pollution caused by the transfers of the substrate transfers before the high temperature crystallization is avoided.
Smart Images
Figure CN119351990A_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the field of semiconductor devices and two-dimensional material technology, and in particular to a method for preparing a two-dimensional film layer structure and the two-dimensional film layer structure. Background Art
[0002] With the continuous development of integrated circuits, the chip size continues to shrink, and traditional silicon-based transistor devices can no longer meet the further development of Moore's Law. Two-dimensional materials with atomic-level thickness have the advantages of high mobility, smooth surface without dangling bonds, strong gate control ability, low power consumption, and effective high integration, which have gradually attracted people's attention. Two-dimensional materials include graphene, carbides, nitrides, transition metal sulfides, oxides, etc., and their properties range from superconductors, metals, semimetals, semiconductors to insulators. They are widely used in field effect transistors, optoelectronic devices, logic devices and other fields. The preparation technology of two-dimensional materials mainly includes mechanical exfoliation, hydrothermal method, chemical vapor deposition, metal organic chemical vapor epitaxy and atomic layer deposition. It is difficult to obtain large-area single-layer two-dimensional materials by mechanical exfoliation, so it cannot be applied on a large scale; chemical vapor deposition cannot accurately control the thickness of the two-dimensional material film, and the grown film often coexists with single layers and multiple layers, and the uniformity of large-area growth is poor. Metal organic chemical vapor epitaxy equipment is expensive and complicated to operate, and it does not have obvious advantages for preparing uniform and controllable two-dimensional materials. Atomic layer deposition uses alternating pulses to pass precursors through a self-limiting chemical reaction on the substrate surface. It has large-area uniformity and conformality, and can achieve effective control of the number of layers. Therefore, atomic layer deposition has obvious advantages in preparing single-layer and few-layer two-dimensional material films with controllable number of layers at the wafer level. However, atomic layer deposition reacts at low temperatures of less than 400°C, and the prepared films have poor crystallization properties. It is usually necessary to use high-temperature annealing again on the two-dimensional materials grown by atomic layer deposition to improve the crystallization properties of the film. Not only is the operation cumbersome, but it is also easy to contaminate the wafer surface during the transfer between the two devices. Summary of the invention
[0003] The purpose of the present invention is to provide a method for preparing a two-dimensional film layer structure and a two-dimensional film layer structure, so as to provide a technical solution that can improve the crystallization performance of each film layer in the two-dimensional film layer structure.
[0004] In a first aspect, the present invention discloses a method for preparing a two-dimensional film layer structure, which comprises the following steps: preparing at least one two-dimensional film layer in an atomic layer deposition reaction chamber to obtain the two-dimensional film layer structure; wherein the at least one two-dimensional film layer is made of the same material; and performing in-situ crystallization at least after the two-dimensional film layer structure is prepared.
[0005] In the case of adopting the above technical scheme, the method for preparing a two-dimensional film layer structure provided by the present invention can not only realize the in-situ high-temperature crystallization of the two-dimensional film layer structure after the completion of atomic layer deposition, but also combine the two-dimensional film layer deposition process and the crystallization process, and cross-cycle until the growth reaches the required number of cycles, which can be applicable to the growth of two-dimensional film layers of various materials. It should be understood that the present invention can improve the crystallization performance of each two-dimensional film layer of the two-dimensional film layer structure by cross-growing the film layer and the crystallization process. Each two-dimensional film layer grows epitaxially according to the lattice of the previous two-dimensional film layer, so that the crystallization performance of the entire two-dimensional film layer structure is improved, and the performance of the prepared device is more excellent. And the present invention can realize the high-temperature crystallization of the two-dimensional film layer in situ after atomic layer deposition, which is simple to operate and effectively avoids contamination in the process of transferring the substrate before high-temperature crystallization. And the method of the present invention can realize the precise control of the number of layers of two-dimensional materials, improve the crystallinity of two-dimensional materials, and make the performance of the prepared device more excellent.
[0006] Furthermore, the step of preparing at least one two-dimensional film layer in an atomic layer deposition reaction chamber to obtain the two-dimensional film layer structure includes:
[0007] The atomic layer deposition reaction chamber is subjected to a vacuum treatment; wherein a substrate is placed in the atomic layer deposition reaction chamber;
[0008] A first reaction gas is introduced into the atomic layer deposition reaction chamber, and the first reaction gas is deposited on the substrate to obtain a first reaction film layer;
[0009] Introducing a second reaction gas into the atomic layer deposition reaction chamber, where the second reaction gas is deposited on the first reaction film layer and reacts with the first reaction film layer to obtain the two-dimensional film layer;
[0010] Repeat the above steps at least once to obtain the two-dimensional film layer structure.
[0011] Furthermore, after the atomic layer deposition reaction chamber is evacuated and before the first reaction gas is introduced into the atomic layer deposition reaction chamber, the method for preparing the two-dimensional film structure further includes:
[0012] The atomic layer deposition reaction chamber, the first reaction gas supply source, and the second reaction gas supply source are preheated.
[0013] Furthermore, after a first reaction gas is introduced into the atomic layer deposition reaction chamber and the first reaction gas is deposited on the substrate to obtain a first reaction film layer, and before a second reaction gas is introduced into the atomic layer deposition reaction chamber, the method for preparing a two-dimensional film layer structure further includes:
[0014] The atomic layer deposition reaction chamber is purged with an inert gas so that the inert gas fills the atomic layer deposition reaction chamber.
[0015] Further, at least after the two-dimensional film layer structure is prepared, in-situ crystallization is performed, which includes:
[0016] After each two-dimensional film layer is deposited, in-situ crystallization is performed.
[0017] Further, at least after the two-dimensional film layer structure is prepared, in-situ crystallization is performed, which includes:
[0018] After each deposition of a preset layer of the two-dimensional film layer, in-situ crystallization is performed, wherein the preset layer is determined according to the required performance of the two-dimensional film layer structure.
[0019] Further, at least after the two-dimensional film layer structure is prepared, in-situ crystallization is performed, which includes:
[0020] After the two-dimensional film layer structure is prepared, the two-dimensional film layer structure is in-situ crystallized.
[0021] Furthermore, the material of the two-dimensional film layer includes one of a superconducting material, a metal material, a semi-metal material, a semiconductor material and an insulator material, and / or the material of the substrate includes one of silicon, silicon dioxide, sapphire and quartz.
[0022] Furthermore, the temperature range of the in-situ crystallization includes room temperature-1200°C.
[0023] In a second aspect, the present invention further provides a two-dimensional film layer structure, which is prepared by the above-mentioned method for preparing a two-dimensional film layer structure.
[0024] Compared with the prior art, the beneficial effects of the second aspect of the present invention are the same as the beneficial effects of the method for preparing a two-dimensional film layer structure according to the above technical solution, and will not be elaborated here. BRIEF DESCRIPTION OF THE DRAWINGS
[0025] The drawings described herein are used to provide a further understanding of the present invention and constitute a part of the present invention. The exemplary embodiments of the present invention and their descriptions are used to explain the present invention and do not constitute an improper limitation of the present invention. In the drawings:
[0026] Figure 1 A flow chart showing the steps of a method for preparing a two-dimensional film layer structure provided by an embodiment of the present invention is shown;
[0027] Figure 2 A tungsten diselenide growth process flow chart provided by an embodiment of the present invention is shown. DETAILED DESCRIPTION
[0028] Hereinafter, embodiments of the present disclosure will be described with reference to the accompanying drawings. However, it should be understood that these descriptions are exemplary only and are not intended to limit the scope of the present disclosure. In addition, in the following description, descriptions of well-known structures and technologies are omitted to avoid unnecessary confusion of the concepts of the present disclosure.
[0029] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include one or more of the features. In the description of the present invention, the meaning of "multiple" is two or more, unless otherwise clearly and specifically defined. The meaning of "several" is one or more, unless otherwise clearly and specifically defined.
[0030] With the continuous development of integrated circuits, the chip size continues to shrink, and traditional silicon-based transistor devices can no longer meet the further development of Moore's Law. Two-dimensional materials with atomic-level thickness have the advantages of high mobility, smooth surface without dangling bonds, strong gate control ability, low power consumption, and effective high integration, which have gradually attracted people's attention. Two-dimensional materials include graphene, carbides, nitrides, transition metal sulfides, oxides, etc., and their properties range from superconductors, metals, semimetals, semiconductors to insulators. They are widely used in field effect transistors, optoelectronic devices, logic devices and other fields. The preparation technology of two-dimensional materials mainly includes mechanical exfoliation, hydrothermal method, chemical vapor deposition, metal organic chemical vapor epitaxy and atomic layer deposition. It is difficult to obtain large-area single-layer two-dimensional materials by mechanical exfoliation, so it cannot be applied on a large scale; chemical vapor deposition cannot accurately control the thickness of the two-dimensional material film, and the grown film often coexists with single layers and multiple layers, and the uniformity of large-area growth is poor. Metal organic chemical vapor epitaxy equipment is expensive and complicated to operate, and it does not have obvious advantages for preparing uniform and controllable two-dimensional materials. Atomic layer deposition uses alternating pulses to pass precursors through a self-limiting chemical reaction on the substrate surface. It has large-area uniformity and conformality, and can effectively control the number of layers. Therefore, atomic layer deposition has obvious advantages in preparing single-layer and few-layer two-dimensional material films with controllable number of layers at the wafer level. However, atomic layer deposition reacts at low temperatures of less than 400°C, and the prepared films have poor crystallization properties. It is usually necessary to use high-temperature annealing again on the two-dimensional materials grown by atomic layer deposition to improve the crystallization properties of the film. Not only is the operation cumbersome, but it is also easy to contaminate the wafer surface during the transfer between the two devices.
[0031] First, refer to Figure 1 , an embodiment of the present invention provides a method for preparing a two-dimensional film layer structure, the method for preparing a two-dimensional film layer structure comprising the following steps:
[0032] S100, preparing at least one two-dimensional film layer in an atomic layer deposition reaction chamber to obtain the two-dimensional film layer structure; wherein the at least one two-dimensional film layer is made of the same material.
[0033] Specifically, the step includes: performing a vacuum treatment on the atomic layer deposition reaction chamber; wherein a substrate is placed in the atomic layer deposition reaction chamber. The vacuum treatment can be performed by an external vacuum device. It should be understood that before depositing the film layer, the vacuum treatment is performed to prevent the material of the deposited film layer from reacting with the substance present in the atomic layer deposition reaction chamber, thereby ensuring the quality of the deposited film layer.
[0034] The material of the substrate includes at least one of silicon, silicon dioxide, sapphire and quartz. That is, the substrate can be a silicon substrate, a silicon dioxide substrate, a sapphire substrate, a quartz substrate, or a substrate formed of multiple materials among silicon, silicon dioxide, sapphire and quartz.
[0035] A first reaction gas is introduced into the atomic layer deposition reaction chamber, and the first reaction gas is deposited on the substrate to obtain a first reaction film layer.
[0036] In practice, before the first reaction gas is introduced into the atomic layer deposition reaction chamber, the method for preparing a two-dimensional film structure provided by the embodiment of the present invention further includes: preheating the atomic layer deposition reaction chamber, the first reaction gas supply source, and the second reaction gas supply source. It is also necessary to preheat the delivery pipelines of the first reaction gas and the second reaction gas, based on which the stability of the delivery process of the first reaction gas and the delivery process of the second reaction gas can be guaranteed.
[0037] After the temperatures of the atomic layer deposition reaction chamber, the first reaction gas supply source, the second reaction gas supply source, and the first reaction gas and the second reaction gas delivery pipeline reach the required temperatures, the first reaction gas is introduced into the atomic layer deposition reaction chamber. At this time, since the temperature of the atomic layer deposition reaction chamber has reached the required deposition temperature, the first reaction gas can be deposited on the substrate to obtain a first reaction film layer.
[0038] Exemplarily, when the first reaction gas delivery pipeline and the first reaction gas supply source are heated and stabilized at a specific temperature, the first reaction gas is introduced into the atomic layer deposition reaction chamber for 0.01-3 s.
[0039] A second reaction gas is introduced into the atomic layer deposition reaction chamber, and the second reaction gas is deposited on the first reaction film layer and reacts with the first reaction film layer to obtain the two-dimensional film layer.
[0040] It should be understood that in order to ensure that the first reaction gas does not exist in the atomic layer deposition reaction chamber before the second reaction gas is introduced, an embodiment of the present invention introduces the first reaction gas into the atomic layer deposition reaction chamber, and after the first reaction gas is deposited on the substrate to obtain a first reaction film layer, before the second reaction gas is introduced into the atomic layer deposition reaction chamber, the method for preparing a two-dimensional film layer structure also includes: purging the atomic layer deposition reaction chamber with an inert gas to fill the atomic layer deposition reaction chamber with the inert gas, thereby taking the first reaction gas in the atomic layer deposition reaction chamber away from the atomic layer deposition reaction chamber, ensuring that the first reaction gas does not exist in the atomic layer deposition reaction chamber.
[0041] Based on the above description, a two-dimensional film layer is formed on the substrate.
[0042] In order to obtain a multi-layer two-dimensional film layer, the embodiment of the present invention repeats the above steps at least once to obtain the two-dimensional film layer structure.
[0043] S200, performing in-situ crystallization at least after the two-dimensional film layer structure is prepared.
[0044] As a possible implementation method, the embodiment of the present invention can be that each layer of the two-dimensional film is deposited and in-situ crystallized. Based on this, the deposited two-dimensional film layer can be crystallized layer by layer at high temperature, that is, each two-dimensional film layer has achieved high-temperature crystallization, which is beneficial to improve the crystallization performance of wafer-level two-dimensional materials, reduce defects, and avoid transferring the substrate before crystallization to generate more pollution; therefore, the two-dimensional material film prepared by the method of the embodiment of the present invention has good crystallization performance, and the film thickness has the advantages of precise controllability, good uniformity, and good conformality at the single atomic layer level.
[0045] As another possible implementation, an embodiment of the present invention may be to perform in-situ crystallization after each preset layer of the two-dimensional film layer is deposited, wherein the preset layer is determined according to the required performance of the two-dimensional film layer structure. It should be understood that although high-temperature crystallization can obtain a high-performance two-dimensional film layer structure after each deposition of a two-dimensional film layer, it will not only consume energy but also be more time-consuming. Therefore, the timing of in-situ crystallization can be determined according to the function and performance requirements of the two-dimensional film layer structure to be prepared. Exemplarily, in-situ crystallization may be performed once after each two-dimensional film layer is deposited, or in-situ crystallization may be performed once after each three-dimensional film layers are deposited.
[0046] As a possible implementation, an embodiment of the present invention may be to perform in-situ crystallization on the two-dimensional film layer structure after the two-dimensional film layer structure is prepared. It should be understood that in practice, according to demand, only performing in-situ crystallization on the two-dimensional film layer structure after the two-dimensional film layer structure is prepared can meet actual needs.
[0047] Based on the above description, the embodiment of the present invention can realize in-situ high-temperature annealing of the two-dimensional film structure after the completion of atomic layer deposition, and can also combine growth and annealing and perform them crosswise until the required number of growth cycles is reached. The crystallization performance of each layer in the two-dimensional film layer can also be improved. Each layer is epitaxially grown according to the lattice of the previous layer, so that the crystallization performance of the entire film is improved, and the performance of the device made of the two-dimensional material film grown based on this method is better.
[0048] In an embodiment of the present invention, the material of the two-dimensional film layer includes one of a superconducting material, a metal material, a semi-metal material, a semiconductor material and an insulator material. The temperature range of the in-situ crystallization includes room temperature-1200°C.
[0049] The method for preparing a two-dimensional film layer structure provided by an embodiment of the present invention is to add an in-situ high-temperature crystallization process during the atomic layer deposition process to improve the crystallization performance of the two-dimensional film layer structure. Specifically, it includes: firstly placing a substrate in an atomic layer deposition reaction chamber, evacuating the atomic layer deposition reaction chamber, and performing an atomic layer deposition process after the pipeline, cavity, substrate, etc. reach the required thermal equilibrium. The number of layers of the two-dimensional film layer structure is set by the number of atomic layer deposition cycles; during the process cycle of the two-dimensional film layer, an in-situ high-temperature crystallization process is added to improve the crystallization performance of the two-dimensional material. The crystallization process can be within any process cycle, and the crystallization temperature is 250°C-1100°C. After the deposition is completed, wait for the chamber to cool to room temperature, fill it with inert gas, open the cavity and remove the substrate; a single-layer or few-layer two-dimensional film layer structure is obtained. The method for preparing a two-dimensional film layer structure provided by an embodiment of the present invention is simple to operate, and can realize in-situ high-temperature annealing of the two-dimensional film after the completion of atomic layer deposition, and can also combine growth and annealing and perform them crosswise until the required number of growth cycles is cycled. Therefore, the crystallization performance of each layer in the two-dimensional film layer structure can be improved at the same time, and each layer is epitaxially grown according to the lattice of the previous layer, so that the crystallization performance of the entire film is improved. In short, the method for preparing a two-dimensional film layer structure provided by an embodiment of the present invention combines the high-precision control of the number of layers of the two-dimensional film layer structure by atomic layer deposition, high conformality, large-area uniform deposition and high crystallization performance, which is conducive to the wide application of two-dimensional film layer structures in field effect transistors, optoelectronic devices, flexible electronic devices, gas sensors, etc. and other fields requiring high crystallization performance of two-dimensional materials.
[0050] As a specific embodiment, the method for preparing a two-dimensional film layer structure provided in an embodiment of the present invention includes: placing silicon / silicon oxide and sapphire substrates in an atomic layer deposition reaction chamber, evacuating the reaction chamber and starting to heat the pipeline, reaction source, etc.; the heating temperature of the reaction source is determined according to the saturated vapor pressure of the substance combined with the peak pressure on the equipment. When the film layer in the two-dimensional film layer structure is a molybdenum disulfide film, hexacarbonyl molybdenum can be used as the molybdenum source, the heating temperature is 0-100°C, and the optimal temperature is 45°C, and diethyl disulfide is used as the sulfur source, and the heating temperature is 0-120°C, and the optimal temperature is 50°C. When the reaction gas pipeline and the reaction source of the reaction gas are heated and stabilized at a specific temperature and the vacuum degree is stable, the edited process program is started. The specific process steps are as follows: pulse molybdenum hexacarbonyl into the reaction chamber, the pulse time is 0.01-1s, and the optimal time is 0.2s; perform argon purge for 5-180s, and the optimal time is 40s; pulse diethyl disulfide into the reaction chamber for 0.01-1s, and the optimal time is 0.015s; perform argon purge for 5-180s, and the optimal time is 60s; wherein the carrier gas flow rate of molybdenum hexacarbonyl and diethyl disulfide can be 10-150sccm, and the optimal time is 20sccm. Grow 150 cycles of the above ALD cycle. Anneal the molybdenum sulfide film, and the annealing temperature can be 400-1000℃, and the optimal time is 900℃. Obtain a molybdenum disulfide film with good crystallization quality.
[0051] As another specific embodiment, the method for preparing a two-dimensional film structure provided in the embodiment of the present invention includes: placing a silicon / silicon oxide and a sapphire substrate in an atomic layer deposition reaction chamber, evacuating the reaction chamber and starting to heat the reaction gas pipeline, the reaction gas reaction source, etc.; the reaction source heating temperature is determined according to the saturated vapor pressure of the substance combined with the peak pressure on the device. In this embodiment, a tungsten diselenide film is grown. The tungsten diselenide growth flow chart is shown in the attached figure. Figure 2As shown, tungsten pentachloride is first used as a tungsten source, the heating temperature is 0-120°C, preferably 110°C, and hydrogen selenide is used as a selenium source, which is mixed into the Ar gas at a concentration of 9% and pulsed into the chamber. When the delivery pipeline and reaction source of the reaction gas are heated and stabilized at a specific temperature and the vacuum is stable, the edited process program is started. The specific process steps are as follows: pulse tungsten pentachloride into the reaction chamber for 0.01-1s, preferably 0.1s; purge argon for 5-180s, preferably 50s; pulse hydrogen selenide into the reaction chamber for 0.01-1s, preferably 0.2s, purge argon for 5-180s, preferably 60s; the carrier gas flow rate is 5-100sccm, preferably 25sccm. Grow 10 cycles of the above ALD cycle and anneal the tungsten diselenide film. The annealing temperature can be 400-1000°C. After the above steps are completed, argon gas is purged for 50-800s to restore the temperature to the reaction temperature, and then the above 10 cycles of ALD are performed; this process is repeated for 15 cycles to obtain a tungsten diselenide film with high crystallinity.
[0052] As another specific embodiment, a silicon / silicon oxide substrate is placed in an atomic layer deposition reaction chamber, the reaction chamber is evacuated and the pipeline, reaction source, etc. are heated; the heating temperature of the reaction source is determined according to the saturated vapor pressure of the substance combined with the peak pressure on the equipment. In this example, titanium disulfide is grown, TDMAT is used as the titanium source, heated to 50°C in the bubbler, hydrogen sulfide is used as the sulfur source, and pulsed into the chamber. When the pipeline and reaction source are heated and stabilized at a specific temperature and the vacuum degree is stable, the edited process program is started. The specific process steps are as follows: pulse TDMAT into the reaction chamber for 0.01-1s, preferably 0.15s; purge argon for 5-180s, preferably 60s; pulse hydrogen sulfide into the reaction chamber for 0.01-1s, preferably 0.08s, purge argon for 5-180s, preferably 45s; the carrier gas flow rate is 5-100sccm, preferably 25sccm. The titanium disulfide film is annealed after 30 cycles of the above ALD cycle. The annealing temperature can be 50-1000°C. After the above steps are completed, argon gas is purged for 200-800s to restore the temperature to the reaction temperature, and then the above 30 cycles of ALD cycle are performed; this process is repeated for 5 cycles to obtain a titanium disulfide film with a certain degree of crystallinity.
[0053] In summary, the embodiment of the present invention prepares a two-dimensional molybdenum disulfide film based on atomic layer deposition and simultaneously introduces in-situ high-temperature annealing. The molybdenum sulfide film prepared by the method has good conformality, and the film thickness is precisely controllable at the level of a single atomic layer, which is beneficial to improving the crystallization performance of wafer-level molybdenum disulfide and avoiding more contamination caused by substrate transfer before annealing. The method is of great significance to the advancement of molybdenum sulfide in various types of field effect transistors, optoelectronic devices, flexible electronic devices, gas sensors and other fields.
[0054] In the second aspect, the embodiment of the present invention further provides a two-dimensional film layer structure, which is prepared by the method for preparing a two-dimensional film layer structure in the first aspect. Therefore, the two-dimensional film layer structure obtained by the embodiment of the present invention can improve the crystallization performance of each two-dimensional film layer of the two-dimensional film layer structure by cross-growth film layer and crystallization process. Each two-dimensional film layer grows epitaxially according to the lattice of the previous two-dimensional film layer, so that the crystallization performance of the entire two-dimensional film layer structure is improved, and the performance of the prepared device is more excellent. In addition, the embodiment of the present invention can realize high-temperature crystallization of the two-dimensional film layer in situ after atomic layer deposition, which is simple to operate and effectively avoids contamination in the process of transferring the substrate before high-temperature crystallization.
[0055] Although the present invention is described herein in conjunction with various embodiments, in the process of implementing the claimed invention, those skilled in the art may understand and implement other variations of the disclosed embodiments by viewing the drawings, the disclosure, and the appended claims. In the claims, the word "comprising" does not exclude other components or steps, and "one" or "an" does not exclude multiple situations. A single processor or other unit may implement several functions listed in the claims. Certain measures are recorded in different dependent claims, but this does not mean that these measures cannot be combined to produce good results.
[0056] Although the present invention has been described in conjunction with specific features and embodiments thereof, it is apparent that various modifications and combinations may be made thereto without departing from the spirit and scope of the present invention. Accordingly, this specification and the accompanying drawings are merely exemplary illustrations of the present invention as defined by the appended claims and are deemed to cover any and all modifications, variations, combinations or equivalents within the scope of the present invention. Obviously, those skilled in the art may make various modifications and variations to the present invention without departing from the spirit and scope of the present invention. Thus, the present invention is intended to include such modifications and variations if they fall within the scope of the claims of the present invention and their equivalents.
Claims
1. A method for preparing a two-dimensional film structure, characterized in that: The method for preparing a two-dimensional film layer structure comprises the following steps: Preparing at least one two-dimensional film layer in an atomic layer deposition reaction chamber to obtain the two-dimensional film layer structure; wherein the at least one two-dimensional film layer is made of the same material; At least in-situ crystallization is performed after the two-dimensional film layer structure is prepared.
2. The method for preparing a two-dimensional film structure according to claim 1, characterized in that: The step of preparing at least one two-dimensional film layer in an atomic layer deposition reaction chamber to obtain the two-dimensional film layer structure comprises: The atomic layer deposition reaction chamber is subjected to a vacuum treatment; wherein a substrate is placed in the atomic layer deposition reaction chamber; A first reaction gas is introduced into the atomic layer deposition reaction chamber, and the first reaction gas is deposited on the substrate to obtain a first reaction film layer; Introducing a second reaction gas into the atomic layer deposition reaction chamber, where the second reaction gas is deposited on the first reaction film layer and reacts with the first reaction film layer to obtain the two-dimensional film layer; Repeat the above steps at least once to obtain the two-dimensional film layer structure.
3. The method for preparing a two-dimensional film structure according to claim 2, characterized in that: After the atomic layer deposition reaction chamber is evacuated and before the first reaction gas is introduced into the atomic layer deposition reaction chamber, the method for preparing a two-dimensional film structure further includes: The atomic layer deposition reaction chamber, the first reaction gas supply source, and the second reaction gas supply source are preheated.
4. The method for preparing a two-dimensional film structure according to claim 2, characterized in that: After a first reaction gas is introduced into the atomic layer deposition reaction chamber and the first reaction gas is deposited on the substrate to obtain a first reaction film layer, and before a second reaction gas is introduced into the atomic layer deposition reaction chamber, the method for preparing a two-dimensional film layer structure further includes: The atomic layer deposition reaction chamber is purged with an inert gas so that the inert gas fills the atomic layer deposition reaction chamber.
5. The method for preparing a two-dimensional film structure according to claim 1, characterized in that: At least after the two-dimensional film structure is prepared, in-situ crystallization is performed, which includes: After each two-dimensional film layer is deposited, in-situ crystallization is performed.
6. The method for preparing a two-dimensional film structure according to claim 1, characterized in that: At least after the two-dimensional film structure is prepared, in-situ crystallization is performed, which includes: After each deposition of a preset layer of the two-dimensional film layer, in-situ crystallization is performed, wherein the preset layer is determined according to the required performance of the two-dimensional film layer structure.
7. The method for preparing a two-dimensional film structure according to claim 1, characterized in that: At least after the two-dimensional film structure is prepared, in-situ crystallization is performed, which includes: After the two-dimensional film layer structure is prepared, the two-dimensional film layer structure is in-situ crystallized.
8. The method for preparing a two-dimensional film layer structure according to any one of claims 1 to 7, characterized in that: The material of the two-dimensional film layer includes one of a superconducting material, a metal material, a semi-metal material, a semiconductor material and an insulator material, and / or the material of the substrate includes at least one of silicon, silicon dioxide, sapphire and quartz.
9. The method for preparing a two-dimensional film structure according to any one of claims 1 to 7, characterized in that: The temperature range of the in-situ crystallization includes room temperature-1200°C.
10. A two-dimensional film structure, characterized in that: The two-dimensional film structure is prepared by the method for preparing the two-dimensional film structure according to any one of claims 1 to 9.