Radio frequency switch chip and radio frequency front-end module

Abstract

The invention discloses a radio frequency switch chip and a radio frequency front-end module. The radio frequency switch chip comprises a protection module, the protection module comprises an input port and an output port, when the protection module is in a working state, the input port is configured to receive a first signal, and the output port is configured to output a second signal to a switch circuit in the radio frequency switch chip; the protection module comprises a protection circuit, a first end of the protection circuit is connected with the input port, a second end of the protection circuit is grounded, and when the protection module is in a non-working state, the protection circuit is configured to release an electrostatic signal of the input port to the ground. According to the technical scheme provided by the embodiment of the invention, when the protection module is in the non-working state, if the electrostatic signal exists in the input port of the protection module, the electrostatic signal can be released to the ground through the protection circuit; even if the input port of the protection circuit is electrified before the power supply, the electric leakage phenomenon does not occur.

Description

Technical Field

[0001] The present application relates to the field of radio frequency technology, and in particular to a radio frequency switch chip and a radio frequency front-end module. Background Art

[0002] RF switch chips play a key role in RF front-end modules. Their insertion loss, return loss, isolation, harmonic suppression and power capacity have a significant impact on RF front-end modules. In related technologies, RF switch chips are easily affected by electrostatic discharge damage, which damages the circuits and electronic components in the RF switch chips, thereby affecting the normal operation of the RF switch chips. Therefore, how to protect the circuits and electronic components in the RF switch chips from electrostatic discharge damage has become a technical problem that needs to be solved urgently. Summary of the invention

[0003] The present application proposes a radio frequency switch chip and a radio frequency front-end module.

[0004] In a first aspect, an embodiment of the present application provides a radio frequency switch chip, comprising: a protection module, the protection module comprising an input port and an output port, when the protection module is in a working state, the input port is configured to receive a first signal, and the output port is configured to output a second signal to a switch circuit in the radio frequency switch chip; the protection module comprises a protection circuit, a first end of the protection circuit is connected to the input port, and a second end of the protection circuit is grounded, when the protection module is in a non-working state, the protection circuit is configured to release the electrostatic signal of the input port to the ground.

[0005] Among them, the protection circuit includes a first protection branch, the first end of the first protection branch is connected to the input port, the second end of the first protection branch is grounded, the on-voltage of the first protection branch is greater than the voltage of the first signal, and the first protection branch is configured to release the positive pulse signal in the electrostatic signal to the ground.

[0006] The protection circuit further includes a second protection branch, a first end of the second protection branch is connected to the input port, a second end of the second protection branch is grounded, and the second protection branch is configured to release the negative pulse signal in the electrostatic signal to the ground.

[0007] Among them, the first protection branch includes M first diodes connected in series, the anode of the first diode at the head end of the M first diodes is connected to the input port, the cathode of the first diode at the end of the M first diodes is grounded, and M is a positive integer; the second protection branch includes N second diodes connected in series, the cathode of the second diode at the head end of the N second diodes is connected to the input port, the anode of the second diode at the end of the N second diodes is grounded, and N is a positive integer less than M.

[0008] Among them, the protection circuit also includes a first capacitor and a first resistor; the first end of the first resistor is connected to the input port, the second end of the first resistor is connected to the first end of the first capacitor, the second end of the first capacitor is grounded, and the common end of the first resistor and the first capacitor is connected to the output port.

[0009] The protection module further includes an embedding circuit, a first end of the embedding circuit is connected to the power supply end, and a second end of the embedding circuit and a second end of the protection circuit are commonly grounded.

[0010] Among them, when the protection module is in a non-working state, the ground terminal of the protection circuit is suspended, the power supply terminal is grounded, and the protection circuit is configured to transmit the electrostatic signal to the power supply terminal through the embedded circuit, and the power supply terminal releases the electrostatic signal.

[0011] When the protection module is in operation, the power supply terminal supplies power to the protection circuit through the embedded circuit.

[0012] Among them, the embedded circuit includes a second resistor, a second capacitor, an inverter and an NMOS tube; the first end of the second capacitor is grounded, and the second end of the second capacitor is connected to the first end of the second resistor; the second end of the second resistor is connected to the power supply end and the drain of the NMOS tube; the common end of the second capacitor and the second resistor is connected to the input end of the inverter; the output end of the inverter is connected to the gate of the NMOS tube; the source of the NMOS tube is grounded.

[0013] The protection module further includes a first decoupling circuit, one end of which is connected to the power supply end, the other end of which is grounded, and the first decoupling circuit is located between the embedding circuit and the protection circuit and is arranged close to the embedding circuit.

[0014] Among them, the protection module also includes a second decoupling circuit and a third decoupling circuit; one end of the second decoupling circuit is connected to the input port, and the other end of the second decoupling circuit is grounded; the second decoupling capacitor is located between the embedded circuit and the protection circuit and is arranged close to the protection circuit; one end of the third decoupling circuit is connected to the power supply end, and the other end of the third decoupling circuit is grounded, and the third decoupling circuit is located on the side of the protection circuit away from the embedded circuit.

[0015] Wherein, the first decoupling circuit includes at least one first MOS capacitor, the gate of each first MOS capacitor is connected to the power supply end, and the source and drain of each first MOS capacitor are connected and then grounded; or / and, the second decoupling circuit includes at least one group of second MOS capacitor units, each group of second MOS capacitor units includes a second MOS capacitor and a third MOS capacitor, the gate of the second MOS capacitor is grounded, the source and drain of the second MOS capacitor are connected and then connected to the gate of the third MOS capacitor, the gate of the third MOS capacitor is connected to the input port, and the source and drain of the third MOS capacitor are connected and then grounded; or / and, the third decoupling circuit includes at least one group of third MOS capacitor units, each group of third MOS capacitor units includes a fourth MOS capacitor and a fifth MOS capacitor, the gate of the fourth MOS capacitor is grounded, the source and drain of the fourth MOS capacitor are connected and then grounded, the gate of the fifth MOS capacitor is connected to the power supply end, and the source and drain of the fifth MOS capacitor are connected and then grounded.

[0016] Among them, the RF switch chip also includes a level conversion circuit, a first end of the level conversion circuit is connected to the power supply end, a second end of the level conversion circuit is grounded, a third end of the level conversion circuit is connected to the output port, and a fourth end of the level conversion circuit is connected to the drive circuit in the RF switch chip; the level conversion circuit is configured to convert the level of the second signal into a level suitable for inputting the decoding drive circuit in the RF switch chip.

[0017] Among them, the RF switch chip also includes an oscillation circuit, a first end of the oscillation circuit is connected to the power supply end, a second end of the oscillation circuit is grounded, a third end of the oscillation circuit is configured to receive an enable signal, and a fourth end of the oscillation circuit is configured to output a clock signal; the oscillation circuit is configured to convert a DC signal into an AC signal.

[0018] Among them, the RF switch chip also includes a charge pump, a first end of the charge pump is connected to the power supply end, a second end of the charge pump is grounded, a third end of the charge pump is configured to receive a clock signal, and a fourth end of the charge pump is connected to the negative pressure detection circuit in the RF switch chip; the charge pump is configured to generate negative pressure.

[0019] The RF switch chip also includes a negative pressure detection circuit, a first end of the negative pressure detection circuit is connected to the power supply end, a second end of the negative pressure detection circuit is grounded, a third end of the negative pressure detection circuit is configured to receive an enable signal, a fourth end of the negative pressure detection circuit is connected to the charge pump in the RF switch chip, and a fifth end of the negative pressure detection circuit is connected to the decoding drive circuit in the RF switch chip; the negative pressure detection circuit is configured to prevent negative pressure lock.

[0020] Among them, the RF switch chip also includes a decoding drive circuit, a first end of the decoding drive circuit is connected to the power supply end, a second end of the decoding drive circuit is grounded, a third end of the decoding drive circuit is connected to the level conversion circuit in the RF switch chip, a fourth end of the decoding drive circuit is connected to the negative pressure detection circuit in the RF switch chip, a fifth end of the decoding drive circuit is connected to the charge pump in the RF switch chip, and a sixth end of the decoding drive circuit is connected to the switch circuit in the RF switch chip; the decoding drive circuit is configured to drive the switch circuit in the RF switch chip.

[0021] In a second aspect, an embodiment of the present application provides a radio frequency switch chip, including: a protection module, the protection module including an input port and an output port, when the protection module is in a working state, the input port is configured to receive a first signal, and the output port is configured to output a second signal to a switch circuit in the radio frequency switch chip; the protection module includes a protection circuit, a first end of the protection circuit is connected to the input port, a second end of the protection circuit is grounded, and the protection circuit includes a first protection branch and a second protection branch connected in parallel; the first protection branch includes M first diodes connected in series, an anode of a head-end first diode among the M first diodes is connected to the input port, a cathode of a terminal first diode among the M first diodes is grounded, M is a positive integer, and a conduction voltage of the first protection branch is greater than a voltage of the first signal; the second protection branch includes N second diodes connected in series, a cathode of a head-end second diode among the N second diodes is connected to the input port, anode of a terminal second diode among the N second diodes is grounded, and N is a positive integer less than M.

[0022] Among them, when the protection module is in a non-working state, the first protection branch is configured to release the positive pulse signal in the electrostatic signal of the input port to the ground, and the second protection branch is configured to release the negative pulse signal in the electrostatic signal of the input port to the ground.

[0023] In a third aspect, an embodiment of the present application provides a radio frequency front-end module, comprising a radio frequency switch chip as described in the first aspect or the second aspect.

[0024] Compared with the RF switch chip provided by the related art, the RF switch chip provided in the embodiment of the present application has a protection circuit in the protection module, and there is no direct connection between the input port of the protection circuit and the power supply. When the protection module is not working, if there is an electrostatic signal at the input port of the protection module, the electrostatic signal can be released to the ground through the protection circuit. When in the working state, there is no need to consider the power-on sequence of the input port and the power supply. There is no low-resistance path between the input port of the protection circuit and the power supply. Therefore, no leakage will occur between the input port of the protection circuit and the power supply, even when the input port of the protection circuit is powered on before the power supply. No leakage will occur, thereby not only avoiding damage to components and circuits in the RF switch chip caused by electrostatic signals, but also avoiding leakage between the input port of the protection circuit and the power supply, thereby improving the reliability of the RF switch chip. BRIEF DESCRIPTION OF THE DRAWINGS

[0025] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For those skilled in the art, other drawings can be obtained based on these drawings without creative work.

[0026] Figure 1 This is a circuit structure diagram of a radio frequency switch chip provided in one embodiment of the present application.

[0027] Figure 2 It is a circuit structure diagram of a protection module provided in another embodiment of the present application.

[0028] Figure 3 It is a circuit structure diagram of a protection module provided in another embodiment of the present application.

[0029] Figure 4 This is a circuit structure diagram of a radio frequency switch chip provided in another embodiment of the present application.

[0030] Figure 5 Schematic diagram of a level conversion circuit provided by an embodiment of the present application.

[0031] Figure 6 It is a schematic diagram of an oscillation circuit provided in one embodiment of the present application.

[0032] Figure 7 Schematic diagram of a charge pump provided in one embodiment of the present application.

[0033] Figure 8 is a schematic diagram of a negative pressure detection circuit provided in one embodiment of the present application.

[0034] Fig. 9It is a schematic diagram of a decoding driving circuit provided in one embodiment of the present application.

[0035] Fig.10 This is a circuit structure diagram of a radio frequency switch chip provided in another embodiment of the present application.

[0036] Fig.11 It is a schematic diagram of a radio frequency front-end module provided in one embodiment of the present application. DETAILED DESCRIPTION

[0037] The embodiments of the present application are described in detail below, and examples of the embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present application, and cannot be understood as limiting the present application.

[0038] In order to enable those skilled in the art to better understand the solutions of the present application, the technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without making creative work are within the scope of protection of the present application.

[0039] Please refer to Figure 1 , which shows a circuit structure diagram of a radio frequency switch chip 100 shown in an embodiment of the present application. Radio frequency switch chip 100. The radio frequency switch chip 100 is applied in a radio frequency front-end module, and its main function is to realize the switching, selection, distribution and protection of radio frequency signals.

[0040] In this embodiment, the RF switch chip 100 includes a protection module 10 , which is configured to control the switching state of the switch circuit in the RF switch chip 100 and to achieve communication and data exchange with other modules.

[0041] The protection module 10 includes an input port 110 and an output port 120. The input port 110 is an enable port in the RF switch chip 100, which is used to control the on and off of the switch circuit in the RF switch chip 100. The number of input ports 110 can be determined according to the number of switch circuits included in the switch chip 100. For example, the switch circuit in the RF switch chip 100 includes three switch branches. At this time, the protection module 10 includes two input ports 110, namely the PA_C0 port and the PA_C1 port. When the signal input to the input port 110 is 01, 10, and 11, it indicates that the first switch branch, the second switch branch, and the third switch branch in the RF switch chip 100 are turned on respectively. When the signal input to the input port 110 is 00, it indicates that all the switch branches included in the switch circuit in the RF switch chip 100 are turned off. The output port 120 is used to output the signal processed by the protection module 10. In some embodiments, the number of output ports 120 is equal to the number of input ports 110. The signal input from the input port 110 is processed and then output from the output port 120 to the switch circuit to control the on and off of the switch circuit. As an example, the output port 120 outputs a first control signal to control the on of the switch circuit and outputs a second control signal to control the off of the switch circuit.

[0042] Specifically in this embodiment, when the protection module 10 is in working state, the input port 110 is configured to receive a first signal, and the output port 120 is configured to output a second signal to the switch circuit in the RF switch chip 10. In actual application, the first signal input by the input port 110 and the second signal output by the output port 120 are essentially the same signal.

[0043] The protection module 10 includes a protection circuit 130. A first end 1310 of the protection circuit 130 is connected to the input port 110, and a second end 1320 of the protection circuit 130 is grounded. When the protection module 10 is in a non-working state, the protection circuit 130 is configured to release the electrostatic signal of the input port 110 to the ground. When the protection module 10 is in a non-working state, the power supply terminal in the RF switch chip 100 is not powered on. When there is an electrostatic signal at the input port 110, the protection circuit 130 can release the electrostatic signal to the ground, and when in a working state, the power-on sequence of the input port and the power supply does not need to be considered. There is no low-resistance path between the input port of the protection circuit and the power supply, so there is no leakage between the input port of the protection circuit and the power supply, even when the input port of the protection circuit is powered on before the power supply, there is no leakage, so that not only can the electrostatic signal be prevented from damaging the components and circuits in the RF switch chip, but also leakage between the input port of the protection circuit and the power supply can be prevented, thereby improving the reliability of the RF switch chip.

[0044] The RF switch chip 100 provided in the embodiment of the present application has a protection module 10 in which a protection circuit 130 is provided. The protection circuit 130 is connected between the input port 110 and the output port 120 of the protection module 10. When the protection module 10 is in a working state, the power-on sequence of the input port and the power supply does not need to be considered. There is no low-resistance path between the input port of the protection circuit and the power supply. Therefore, when the protection module 10 is in a working state, no leakage will occur between the input port of the protection circuit and the power supply. When the protection module 10 is in a non-working state, when there is an electrostatic signal at the input port 110, the protection circuit 130 can release the electrostatic signal to the ground to prevent the electrostatic signal from damaging the components and circuits in the RF switch chip.

[0045] Combine the following Figure 2 The circuit structure of the protection circuit 130 is described.

[0046] In some embodiments, the protection circuit 130 includes a first protection branch 1310. A first end of the first protection branch 1310 is connected to the input port 110, and a second end of the first protection branch 1310 is grounded. The on-voltage of the first protection branch 1310 is greater than the voltage of the first signal. In this way, when the protection module 10 is in working state, the first signal will not be released to the ground via the first protection branch 1310, thereby ensuring the normal operation of the protection module 10.

[0047] The first protection branch 1310 is configured to release the positive pulse signal in the electrostatic signal to the ground. When the protection module 10 is in a non-working state, there may be an electrostatic signal at the input port 110. When the electrostatic signal accumulates to a certain extent, the positive pulse signal included therein is greater than the conduction voltage of the first protection branch 1310. At this time, the first protection branch 1310 is turned on, and the positive pulse signal in the electrostatic signal is released to the ground via the first protection branch 1310, thereby preventing the positive pulse signal in the electrostatic signal from damaging the components and circuits in the RF switch chip.

[0048] Optionally, the first protection branch 1310 includes M first diodes 1311 connected in series, the anode of the head first diode among the M first diodes 1311 is connected to the input port 110, the cathode of the terminal first diode among the M first diodes 1311 is grounded, and M is a positive integer.

[0049] The number of M can be determined according to the voltage of the first signal and the conduction voltage of the first diode 1311. Specifically, the voltage of the first signal should be less than the product of the conduction voltage of the first diode 1311 and M. Exemplarily, the voltage of the first signal is 1.8V, the conduction voltage of the first diode 1311 is 0.7V, and M is greater than or equal to 3. Specifically in this embodiment, M is equal to 3, that is, the first protection branch 1310 includes three first diodes 1311 connected in series.

[0050] In some embodiments, the protection circuit 130 further includes a second protection branch 1320, a first end of the second protection branch 1320 is connected to the input port 110, a second end of the second protection branch 1320 is grounded, and the second protection branch 1320 is configured to release the negative pulse signal in the electrostatic signal to the ground. When the protection module 10 is in a non-working state, there may be an electrostatic signal at the input port 110, and the electrostatic signal accumulates to a certain extent, and the negative pulse signal included therein is greater than the conduction voltage of the second protection branch 1320. At this time, the second protection branch 1320 is turned on, and the negative pulse signal in the electrostatic signal is released to the ground via the second protection branch 1320, thereby preventing the positive pulse signal in the electrostatic signal from damaging the components and circuits in the RF switch chip.

[0051] Optionally, the second protection branch 1320 includes N second diodes 1321 connected in series, the cathode of the first second diode among the N second diodes 1321 is connected to the input port 110, and the anode of the terminal second diode of the N second diodes 1321 is grounded, and N is a positive integer less than M. When M is 3, the value of N can be 1 or 2. Specifically in this embodiment, the second protection branch 1320 includes one second diode 1321.

[0052] In some embodiments, the protection circuit 130 further includes a first capacitor 1330 and a first resistor 1340. The first capacitor 1330 is configured to implement a decoupling function. The first resistor 1330 is configured to prevent electrostatic discharge (ESD) charge from leaking to the switch circuit in the RF switch chip 100. The first end of the first resistor 1340 is connected to the input port 110, the second end of the first resistor 1340 is connected to the first end of the first capacitor 1330, the second end of the first capacitor 1330 is grounded, and the common end of the first resistor 1340 and the first capacitor 1330 is connected to the output port 120.

[0053] In summary, the RF switch chip 100 provided in the embodiment of the present application, the protection circuit 130 included in the protection module 10 is provided with a first protection branch 1310 and a second protection branch 1320, the first protection branch 1310 can release the positive pulse signal in the electrostatic signal to the ground, and the second protection branch 1320 can release the negative pulse signal in the electrostatic signal to the ground, thereby preventing the electrostatic signal from leaking to other circuits of the RF switch chip 100, and preventing the electrostatic signal from damaging the components and circuits in the RF switch chip, thereby protecting the components and circuits in the RF switch chip. In addition, the conduction voltage of the first protection branch 1310 is greater than the voltage of the first signal, so that when the protection module 10 is in a working state, the first signal will not be released to the ground through the first protection branch 1310, thereby ensuring the normal operation of the protection module 10. In addition, the protection circuit 130 is also provided with a first capacitor 1330, which can realize the decoupling function. In addition, the protection circuit 130 is also provided with a first resistor 1340, which can prevent the ESD charge from leaking to the switch circuit in the RF switch chip 100.

[0054] Please refer to Figure 3 The protection module 10 further includes a clamping circuit 140 , which is used to adjust the voltage output of the power supply terminal 20 to ensure the safe and stable operation of the RF switch chip 100 .

[0055] The first end of the clamping circuit 140 is connected to the power supply terminal 20, and the second end of the clamping circuit 140 is grounded together with the second end 1320 of the protection circuit 130. When the protection module 10 is in a non-working state, the grounding end of the protection circuit 130 is suspended, and the power supply terminal 20 is grounded. The protection circuit 130 is configured to transmit the electrostatic signal to the power supply terminal 20 through the clamping circuit 140, and the power supply terminal 20 releases the electrostatic signal. The clamping circuit 140 can adjust the voltage of the electrostatic signal to prevent the voltage of the electrostatic signal from being too large to damage the power supply terminal 20.

[0056] When the protection module 10 is in operation, the power supply terminal 20 supplies power to the protection circuit 130 through the clamping circuit 140. The clamping circuit 140 can adjust the output voltage of the power supply terminal 20, thereby achieving stable power supply to the protection circuit 130.

[0057] Optionally, the clamping circuit 140 includes a second resistor 1410, a second capacitor 1420, an inverter 1430, and an NMOS tube 1440; the first end of the second capacitor 1420 is grounded, and the second end of the second capacitor 1420 is connected to the first end of the second resistor 1410; the second end of the second resistor 1420 is connected to the power supply terminal 20 and the drain of the NMOS tube 1440; the common end of the second capacitor 1420 and the second resistor 1410 is connected to the input end of the inverter 1430; the output end of the inverter 1430 is connected to the gate of the NMOS tube 1440; and the source of the NMOS tube 1440 is grounded. Due to the transient characteristics of the capacitor, when the electrostatic signal is applied to the clamping circuit 140, due to the transient characteristics of the capacitor, the voltage on the second capacitor 1420 cannot change suddenly, so during the charging process of the second capacitor 1420, the clamping circuit 140 releases a large electrostatic charge to the ground.

[0058] In summary, the RF switch chip 100 provided in the embodiment of the present application includes a protection module 10 which is also provided with an embedding circuit 140. The second end of the embedding circuit 140 and the second end 1320 of the protection circuit 130 are grounded together. When the protection module 10 is in a non-working state, the ground end of the protection circuit 130 is suspended and the power supply terminal 20 is grounded. At this time, the protection circuit 130 can transmit the electrostatic signal to the power supply terminal 20 through the embedding circuit 140, so that the power supply terminal 20 releases the electrostatic signal. In this process, the embedding circuit 140 can adjust the voltage of the electrostatic signal to avoid the voltage of the electrostatic signal from being too large to damage the power supply terminal 20; in addition, when the protection module 10 is in operation, the embedding circuit 140 can adjust the output voltage of the power supply terminal 20, thereby achieving stable power supply to the protection circuit 130.

[0059] Please refer again Figure 3 , the protection module 20 further includes a first decoupling circuit 150. One end of the first decoupling circuit 150 is connected to the power supply terminal 20, the other end of the first decoupling circuit 150 is grounded, and the first decoupling circuit 150 is located between the clamping circuit 140 and the protection circuit 130 and is arranged close to the clamping circuit 140. In this way, the first decoupling circuit 150 can remove high-frequency noise and fluctuations on the power line close to the clamping circuit 140.

[0060] Optionally, the first decoupling circuit 150 includes at least one first MOS capacitor 1510, the gate of each first MOS capacitor 1510 is connected to the power supply terminal 20, and the source and drain of each first MOS capacitor 1550 are connected and then grounded. The number of first MOS capacitors can be determined according to the high-frequency noise on the power line close to the clamping circuit 140. Specifically, in this embodiment, the first decoupling circuit 150 includes three first MOS capacitors 1510. The first MOS capacitor 1510 can absorb and release charges, thereby removing the high-frequency noise on the power line close to the clamping circuit 140, thereby stabilizing the voltage on the power line close to the clamping circuit 140.

[0061] Please refer again Figure 3 , the protection module 20 further includes a second decoupling circuit 160 and a third decoupling circuit 170 .

[0062] One end of the second decoupling circuit 160 is connected to the input port 110, and the other end of the second decoupling circuit 160 is grounded; the second decoupling circuit 160 is located between the clamping circuit 140 and the protection circuit 130 and is disposed close to the protection circuit 130. In this way, the second decoupling circuit 160 can remove high-frequency noise and fluctuations on the power line close to the protection circuit 130.

[0063] Optionally, the second decoupling circuit 160 includes at least one group of second MOS capacitor units 1610, each group of second MOS capacitor units 1610 includes a second MOS capacitor 1611 and a third MOS capacitor 1612, the gate of the second MOS capacitor 1611 is grounded, the source and drain of the second MOS capacitor 1612 are connected and then connected to the gate of the third MOS capacitor 1612, the gate of the third MOS capacitor 1612 is connected to the input port, and the source and drain of the third MOS capacitor 1612 are connected and then grounded. The number of the second MOS capacitor units 1610 can be determined according to the high-frequency noise on the power line close to the side of the protection circuit 130. Specifically in this embodiment, the second decoupling circuit 160 includes three groups of second MOS capacitor units 1610. The second MOS capacitor unit 1610 can absorb and release charges, thereby removing the high-frequency noise on the power line close to the side of the protection circuit 130, thereby stabilizing the voltage on the power line close to the side of the protection circuit 130.

[0064] One end of the third decoupling circuit 170 is connected to the power supply terminal 20, the other end of the third decoupling circuit 170 is grounded, and the third decoupling circuit 170 is located on a side of the protection circuit 130 away from the clamping circuit 140. In this way, the third decoupling circuit 170 can remove high-frequency noise and fluctuations on the power line on the side of the protection circuit 130 away from the clamping circuit 140.

[0065] Optionally, the third decoupling circuit 170 includes at least one group of third MOS capacitor units 1710, each group of third MOS capacitor units 1710 includes a fourth MOS capacitor 1711 and a fifth MOS capacitor 1712, the gate of the fourth MOS capacitor 1711 is grounded, the source and drain of the fourth MOS capacitor 1711 are connected to the ground, the gate of the fifth MOS capacitor 1712 is connected to the power supply terminal 20, and the source and drain of the fifth MOS capacitor 1712 are connected to the ground. The number of third MOS capacitor units 1710 can be determined according to the high-frequency noise on the power line of the protection circuit 130 away from the clamping circuit 140. Specifically, in this embodiment, the third decoupling circuit 170 includes three groups of third MOS capacitor units 1710. The third MOS capacitor unit 1710 can absorb and release charges, thereby removing the high-frequency noise on the power line of the protection circuit 130 away from the clamping circuit 140, thereby stabilizing the voltage on the power line of the protection circuit 130 away from the clamping circuit 140.

[0066] In summary, the RF switch chip 100 provided in the embodiment of the present application further includes a first decoupling circuit 150 , a second decoupling circuit 160 and a third decoupling circuit 170 in the protection module 10 , which can remove high-frequency noise and fluctuations on the power line in the RF switch chip 100 .

[0067] Please refer to Figure 4 , which shows a circuit structure diagram of another RF switch chip 100 provided in an embodiment of the present application. Figure 4 In the embodiment, the RF switch chip 100 includes a protection module 10 , a power supply terminal 20 , a level conversion circuit 30 , an oscillation circuit 40 , a charge pump 50 , a negative voltage detection circuit 60 , a decoding drive circuit 70 and a switch circuit 80 .

[0068] Among them, the protection module 10 is connected to the power supply terminal 20. The protection module 10 includes an input port 110, an output port 120 and a protection circuit 130. The level conversion circuit 30 is connected to the output port 120, the power supply terminal 20, and the decoding drive module 70 respectively. The oscillation circuit 40 is connected to the power supply terminal 20. The charge pump 50 is connected to the power supply terminal 20, the negative voltage detection circuit 60, and the decoding drive circuit 70 respectively. The negative voltage detection circuit 60 is connected to the power supply terminal 20, the charge pump 50, and the decoding drive circuit 70 respectively. The decoding drive circuit 70 is connected to the power supply terminal 20, the level conversion circuit 30, the charge pump 50, the negative voltage detection circuit 60, and the switch circuit 80 respectively. The specific connection method between the above-mentioned circuits will be combined with Figure 5-Figure 9 The embodiments are described.

[0069] The level conversion circuit 30 is configured to convert the level of the second signal into a level suitable for inputting into the decoding driving circuit in the RF switch chip 100. Exemplarily, the level conversion circuit 30 can convert a 1.8V voltage into a 2.6V voltage.

[0070] Please refer to Figure 5 , the first end 310 of the level conversion circuit 30 is connected to the power supply terminal 20, and the first end 310 of the level conversion circuit 30 is a VDD pin, which is connected to the power supply terminal 20 to realize power supply to the level conversion circuit 30. The second end 320 of the level conversion circuit 30 is grounded. The second end 320 of the level conversion circuit 30 is a GND pin, which is used to connect the ground wire inside the level conversion circuit 30 with the ground wire of the external circuit. The third end 330 of the level conversion circuit 30 is connected to the output port 120. The third end 330 of the level conversion circuit 30 is an input pin, which is used to receive the second signal output by the output port 120. The fourth end 340 of the level conversion circuit 30 is connected to the decoding drive circuit 70 in the RF switch chip 100. The fourth end 340 of the level conversion circuit 30 is an output pin, which is used to output the second signal after level conversion. The level conversion circuit 30 may also include other pins, which are not limited in the embodiment of the present application.

[0071] The oscillator circuit 40 is configured to convert a DC signal into a clock signal. In the RF switch chip 100, the oscillator circuit 40 can generate a stable frequency and a specific waveform. The oscillator circuit 40 can be a cross-coupled oscillator or a three-point oscillator.

[0072] Please refer to Figure 6 , the first end 410 of the oscillation circuit 40 is connected to the power supply terminal 20. Specifically in the present embodiment, the first end 410 of the oscillation circuit 40 is a VDD pin, which is connected to the power supply terminal 20 to realize power supply to the oscillation circuit 40. The second end 420 of the oscillation circuit 40 is grounded. Specifically in the present embodiment, the second end 420 of the oscillation circuit 40 is a GND pin, which is used to connect the ground wire inside the oscillation circuit 40 with the ground wire of the external circuit. The third end 430 of the oscillation circuit 40 is connected to the module for sending an enable signal in the RF switch chip 100, and is used to receive an enable signal. Specifically in the present embodiment, the third end 430 of the oscillation circuit 40 is an enable (EN) pin, which is used to control the opening or closing of the oscillation circuit 40. Specifically, when the enable pin receives a specific level signal (such as a high level), the oscillation circuit 40 starts to work, and when the enable pin receives other level signals (such as a low level), the oscillation circuit 40 is closed. The fourth terminal 440 of the oscillating circuit 40 is connected to the charge pump 50 in the RF switch chip 100, and is used to output a clock signal to the charge pump 50. Specifically in this embodiment, the fourth terminal 440 of the oscillating circuit 40 is a CLK_EM pin.

[0073] The charge pump 50 is configured to generate a negative voltage signal. After the negative voltage signal is input into the decoding driving circuit 70, the decoding driving circuit 70 drives the corresponding switch circuit 80 to turn off based on the negative voltage signal. Figure 7 , the first end 510 of the charge pump 50 is connected to the power supply terminal 20. Specifically in the present embodiment, the first end 510 of the charge pump 50 is a VDD pin, which is connected to the power supply terminal 20 to realize power supply to the charge pump 50. The second end 520 of the charge pump 50 is grounded. Specifically in the present embodiment, the second end 520 of the charge pump 50 is a GND pin, which is used to connect the ground wire inside the charge pump 50 with the ground wire of the external circuit. The third end 530 of the charge pump 50 is connected to the oscillation circuit 40 in the RF switch chip 100, and is used to receive the clock signal output by the oscillation circuit 40. Specifically in the present embodiment, the third end 530 of the charge pump 50 is a CLK_IN pin. The fourth end 540 of the charge pump 50 is connected to the negative voltage detection circuit 60 in the RF switch chip 100. Specifically in the present embodiment, the fourth end 540 of the charge pump 50 is a VNEG pin, and the VNEG pin is used to output a negative voltage.

[0074] In some embodiments, the RF switch chip 100 further includes a third capacitor (not shown in the figure), one end of the third capacitor is grounded, and the other end is connected to the fourth end 540 of the charge pump 50 .

[0075] Negative pressure detection circuit 60 is configured to prevent negative pressure lock. Figure 8, the first end 610 of the negative voltage detection circuit 60 is connected to the power supply terminal 20. Specifically in the present embodiment, the first end 610 of the negative voltage detection circuit 60 is a VDD pin, which is connected to the power supply terminal 20 to realize power supply to the negative voltage detection circuit 60. The second end 620 of the negative voltage detection circuit 60 is grounded. Specifically in the present embodiment, the second end 620 of the negative voltage detection circuit 60 is a GND pin, which is used to connect the ground wire inside the negative voltage detection circuit 60 to the ground wire of the external circuit. The third end 630 of the negative voltage detection circuit 60 is connected to the module for sending an enable signal in the RF switch chip 100, and is used to receive an enable signal. Specifically in the present embodiment, the third end 630 of the negative voltage detection circuit 60 is an EN pin, and the EN pin is used to control the opening or closing of the negative voltage detection circuit 60. Specifically, when the EN pin receives a specific level signal (such as a high level), the negative voltage detection circuit 60 starts to work, and when the EN pin receives other level signals (such as a low level), the negative voltage detection circuit 60 is closed. In the embodiment of the present application, the oscillation circuit 40 and the negative voltage detection circuit 60 receive the same enable signal. The fourth terminal 640 of the negative voltage detection circuit 60 is connected to the charge pump 50 in the RF switch chip 100. Specifically in the present embodiment, the fourth terminal 640 of the negative voltage detection circuit 60 is a VNEG pin, which is used to receive the negative voltage signal output by the charge pump 50. The fifth terminal 650 of the negative voltage detection circuit 60 is connected to the decoding drive circuit in the RF switch chip 100. Specifically in the present embodiment, the fifth terminal 650 of the negative voltage detection circuit 50 is a VTL pin, which is used to output a voltage signal to the decoding drive circuit 70.

[0076] The decoding driving circuit 70 is configured to drive the switch circuit 80 in the RF switch chip 100. Specifically, when the driving voltage received by the decoding driving circuit 70 is a positive voltage signal, it is used to drive the corresponding switch circuit 80 to turn on; when the driving voltage received by the decoding driving circuit 70 is a negative voltage signal, it is used to drive the corresponding switch circuit 80 to turn off.

[0077] Please refer to Fig. 9, the first end 710 of the decoding drive circuit 70 is connected to the power supply terminal 20. Specifically in the present embodiment, the first end 710 of the decoding drive circuit 70 is a VDD pin, which is connected to the power supply terminal 20 to realize power supply to the decoding drive circuit 70. The second end 720 of the decoding drive circuit 70 is grounded. Specifically in the present embodiment, the second end 620 of the negative voltage detection circuit 60 is a GND pin, which is used to connect the ground wire inside the decoding drive circuit 70 to the ground wire of the external circuit. The third end 730 of the decoding drive circuit 70 is connected to the level conversion circuit 30 in the RF switch chip 100. Optionally, the third end 730 of the decoding drive circuit 70 includes a plurality of input pins, and different input pins are used to receive the driving voltages of different switch branches output by the voltage conversion circuit 30. Specifically in this embodiment, the third end 730 of the decoding drive circuit 70 includes three input pins, namely, a V1 pin, a V2 pin, and a V3 pin, wherein the V1 pin is used to receive the driving voltage of the first switch branch, the V2 pin is used to receive the driving voltage of the first switch branch, and the V3 pin is used to receive the driving voltage of the first switch branch. The fourth end 740 of the decoding drive circuit 70 is connected to the negative voltage detection circuit 60 in the RF switch chip 100. Specifically in this embodiment, the fourth end 740 of the decoding drive circuit 70 is a VL pin, which is used to receive the voltage signal output by the negative voltage detection circuit 60. The fifth end 750 of the decoding drive circuit 70 is connected to the charge pump 50 in the RF switch chip 100. Specifically in this embodiment, the fifth end 750 of the decoding drive circuit 70 is a VNEG voltage, which is used to receive the negative voltage signal output by the charge pump 50. The sixth end 760 of the decoding drive circuit 70 is connected to the switch circuit 80 in the RF switch chip 100, and is used to output a drive signal to the switch circuit 80. Specifically in this embodiment, the sixth terminal 760 of the decoding driving circuit 70 includes 16 pins, namely VG_SE_RF1 pin, VG_SE_RF2 pin, ..., VG_SE_RF8 pin, VG_SH_RF1 pin, VG_SH_RF2 pin, ..., VG_SH_RF8 pin.

[0078] Please refer to Fig.10 The embodiment of the present application further provides a radio frequency switch chip 100. The radio frequency switch chip 100 includes a protection module 10. The protection module 10 includes an input port 110 and an output port 120. When the protection module 10 is in a working state, the input port 110 is configured to receive a first signal, and the output port 120 is configured to output a second signal to a switch circuit in the radio frequency switch chip.

[0079] The protection module 10 includes a protection circuit 130 , a first end of the protection circuit 130 is connected to the input port 110 , a second end of the protection circuit 130 is grounded, and the protection circuit 130 includes a first protection branch 1310 and a second protection branch 1320 connected in parallel.

[0080] The first protection branch 1310 includes M first diodes 1311 connected in series, the anode of the first diode at the head end of the M first diodes 1311 is connected to the input port 110, the cathode of the first diode at the end of the M first diodes 1311 is grounded, M is a positive integer, and the conduction voltage of the first protection branch 1310 is greater than the voltage of the first signal. Optionally, when the protection module 10 is in a non-working state, the first protection branch 1310 is configured to release the positive pulse signal in the electrostatic signal of the input port 110 to the ground,

[0081] The second protection branch 1320 includes N second diodes 1321 connected in series, the cathode of the first second diode among the N second diodes 1321 is connected to the input port 110, and the anode of the last second diode of the N second diodes 1321 is grounded, where N is a positive integer less than M. Optionally, when the protection module 10 is in a non-working state, the second protection branch 1320 is configured to release the negative pulse signal in the electrostatic signal of the input port 110 to the ground.

[0082] In summary, the RF switch chip 100 provided in the embodiment of the present application and the protection module 10 include a protection circuit 130 provided with a first protection branch 1310 and a second protection branch 1320. The first protection branch 1310 can release the positive pulse signal in the electrostatic signal to the ground, and the second protection branch 1320 can release the negative pulse signal in the electrostatic signal to the ground, thereby preventing the electrostatic signal from leaking to other circuits of the RF switch chip 100, and preventing the electrostatic signal from damaging the circuits and components in the RF switch chip 100, thereby protecting the circuits and components in the RF switch chip 100. In addition, the conduction voltage of the first protection branch 1310 is greater than the voltage of the first signal, so that when the protection module 10 is in working state, the first signal will not be released to the ground through the first protection branch 1310, thereby ensuring the normal operation of the protection module 10.

[0083] Please refer to Fig.11 , which shows a radio frequency front-end module 200 provided in one embodiment of the present application. The radio frequency front-end module 200 is a module integrated with two or more discrete devices such as a radio frequency switch chip 100, a low noise amplifier, a filter, a duplexer, and a power amplifier. In this embodiment, the radio frequency front-end module 200 may include Figure 1 , Figure 4 The RF switch chip 100 shown in any one of the items may also include Fig.10 The RF switch chip 100 is shown.

[0084] The RF front-end module 200 provided in the embodiment of the present application includes a RF switch chip 100. The protection module 10 in the RF switch chip 100 is provided with a protection circuit 130. The protection circuit 130 is connected between the input port 110 and the output port 120 of the protection module 10. When in a working state, the power-on sequence of the input port and the power supply does not need to be considered. There is no low-resistance path between the input port of the protection circuit and the power supply. Therefore, when the protection module 10 is in a working state, no leakage will occur between the input port of the protection circuit and the power supply; and when the protection module 10 is in a working state, when there is an electrostatic signal at the input port 110, the protection circuit 130 can release the electrostatic signal to the ground to prevent the electrostatic signal from damaging the components and circuits in the RF switch chip.

[0085] In the specification of this application, certain words are used to refer to specific components in the specification and claims. Those skilled in the art should understand that hardware manufacturers may use different terms to refer to the same component. The specification and claims do not use the difference in name as a way to distinguish components, but use the difference in function of the components as the criterion for distinction. For example, "including" mentioned throughout the specification and claims is an open term, so it should be interpreted as "including but not limited to"; "substantially" means that those skilled in the art can solve technical problems within a certain error range and basically achieve technical effects.

[0086] In the description of the present application, it should be understood that terms such as "upper", "lower", "front", "back", "left", "right", and "inside" indicating directions or positional relationships are based on the directions or positional relationships shown in the accompanying drawings, and are merely simplified descriptions for the convenience of describing the present application. They do not indicate or imply that the device or element referred to must have a specific direction, be constructed and operated in a specific direction, and therefore should not be understood as a limitation on the present application.

[0087] In this application, unless otherwise clearly specified or limited, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, it can be internal communication between two elements, or it can be only surface contact. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to specific circumstances.

[0088] In the description of this specification, the description with reference to the terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" etc. means that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present application. In this specification, the schematic representations of the above terms do not necessarily refer to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described may be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art may combine and combine the different embodiments or examples described in this specification and the features of the different embodiments or examples, without contradiction.

[0089] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Therefore, the features defined as "first" and "second" may explicitly or implicitly include at least one of the features. In the description of this application, the meaning of "plurality" is at least two, such as two, three, etc., unless otherwise clearly and specifically defined.

[0090] Finally, it should be noted that the above embodiments are only used to illustrate the technical solutions of the present application, rather than to limit it. Although the present application has been described in detail with reference to the aforementioned embodiments, those skilled in the art should understand that they can still modify the technical solutions described in the aforementioned embodiments, or make equivalent replacements for some of the technical features therein. However, these modifications or replacements do not cause the essence of the corresponding technical solutions to deviate from the spirit and scope of the technical solutions of the embodiments of the present application.

Claims

1. A radio frequency switch chip, characterized in that: include: A protection module, the protection module comprising an input port and an output port, when the protection module is in a working state, the input port is configured to receive a first signal, and the output port is configured to output a second signal to a switch circuit in the RF switch chip; The protection module comprises a protection circuit, a first end of the protection circuit is connected to the input port, a second end of the protection circuit is grounded, and when the protection module is in a non-working state, the protection circuit is configured to release the electrostatic signal of the input port to the ground.

2. The radio frequency switch chip according to claim 1, characterized in that: The protection circuit includes a first protection branch, a first end of the first protection branch is connected to the input port, a second end of the first protection branch is grounded, a turn-on voltage of the first protection branch is greater than a voltage of the first signal, and the first protection branch is configured to release a positive pulse signal in the electrostatic signal to the ground.

3. The radio frequency switch chip according to claim 2, characterized in that: The protection circuit also includes a second protection branch, a first end of the second protection branch is connected to the input port, a second end of the second protection branch is grounded, and the second protection branch is configured to release a negative pulse signal in the electrostatic signal to the ground.

4. The radio frequency switch chip according to claim 3, characterized in that: The first protection branch comprises M first diodes connected in series, the anode of the first diode at the head end of the M first diodes is connected to the input port, the cathode of the first diode at the end of the M first diodes is grounded, and M is a positive integer; The second protection branch includes N second diodes connected in series, the cathode of the first second diode among the N second diodes is connected to the input port, the anode of the last second diode of the N second diodes is grounded, and N is a positive integer less than M.

5. The radio frequency switch chip according to claim 4, characterized in that: The protection circuit also includes a first capacitor and a first resistor; the first end of the first resistor is connected to the input port, the second end of the first resistor is connected to the first end of the first capacitor, the second end of the first capacitor is grounded, and the common end of the first resistor and the first capacitor is connected to the output port.

6. The radio frequency switch chip according to claim 1, characterized in that: The protection module further comprises a clamping circuit, a first end of the clamping circuit is connected to a power supply end, and a second end of the clamping circuit and a second end of the protection circuit are commonly grounded.

7. The radio frequency switch chip according to claim 6, characterized in that: When the protection module is in a non-working state, the ground terminal of the protection circuit is suspended, the power supply terminal is grounded, the protection circuit is configured to transmit the electrostatic signal to the power supply terminal through the embedding circuit, and the power supply terminal releases the electrostatic signal.

8. The radio frequency switch chip according to claim 6, characterized in that: When the protection module is in operation, the power supply terminal supplies power to the protection circuit through the clamping circuit.

9. The radio frequency switch chip according to claim 6, characterized in that: The clamping circuit includes a second resistor, a second capacitor, an inverter and an NMOS tube; The first end of the second capacitor is grounded, and the second end of the second capacitor is connected to the first end of the second resistor; the second end of the second resistor is connected to the power supply end and the drain of the NMOS tube; the common end of the second capacitor and the second resistor is connected to the input end of the inverter; the output end of the inverter is connected to the gate of the NMOS tube; the source of the NMOS tube is grounded.

10. The radio frequency switch chip according to claim 1, characterized in that: The protection module also includes a first decoupling circuit, one end of which is connected to the power supply end, the other end of which is grounded, and the first decoupling circuit is located between the clamping circuit and the protection circuit and is arranged close to the clamping circuit.

11. The radio frequency switch chip according to claim 1, characterized in that: The protection module further includes a second decoupling circuit and a third decoupling circuit; one end of the second decoupling circuit is connected to the input port, and the other end of the second decoupling circuit is grounded; the second decoupling capacitor is located between the clamping circuit and the protection circuit and is arranged close to the protection circuit; One end of the third decoupling circuit is connected to the power supply end, the other end of the third decoupling circuit is grounded, and the third decoupling circuit is located on a side of the protection circuit away from the clamping circuit.

12. The radio frequency switch chip according to claim 10 or 11, characterized in that: The first decoupling circuit includes at least one first MOS capacitor, the gate of each first MOS capacitor is connected to the power supply terminal, and the source and drain of each first MOS capacitor are connected and then grounded; Or / and, the second decoupling circuit includes at least one group of second MOS capacitor units, each group of second MOS capacitor units includes a second MOS capacitor and a third MOS capacitor, the gate of the second MOS capacitor is grounded, the source and drain of the second MOS capacitor are connected and then connected to the gate of the third MOS capacitor, the gate of the third MOS capacitor is connected to the input port, and the source and drain of the third MOS capacitor are connected and then grounded; Or / and, the third decoupling circuit includes at least one group of third MOS capacitor units, each group of third MOS capacitor units includes a fourth MOS capacitor and a fifth MOS capacitor, the gate of the fourth MOS capacitor is grounded, the source and drain of the fourth MOS capacitor are connected and then grounded, the gate of the fifth MOS capacitor is connected to the power supply end, and the source and drain of the fifth MOS capacitor are connected and then grounded.

13. The radio frequency switch chip according to claim 1, characterized in that: The RF switch chip further includes a level conversion circuit, a first end of the level conversion circuit is connected to a power supply end, a second end of the level conversion circuit is grounded, a third end of the level conversion circuit is connected to the output port, and a fourth end of the level conversion circuit is connected to a driving circuit in the RF switch chip; The level conversion circuit is configured to convert the level of the second signal into a level suitable for inputting into the decoding driving circuit in the radio frequency switch chip.

14. The radio frequency switch chip according to claim 1, characterized in that: The RF switch chip also includes an oscillation circuit, a first end of the oscillation circuit is connected to a power supply end, a second end of the oscillation circuit is grounded, a third end of the oscillation circuit is configured to receive an enable signal, and a fourth end of the oscillation circuit is configured to output a clock signal; the oscillation circuit is configured to convert a DC signal into an AC signal.

15. The radio frequency switch chip according to claim 1, characterized in that: The RF switch chip also includes a charge pump, a first end of the charge pump is connected to a power supply end, a second end of the charge pump is grounded, a third end of the charge pump is configured to receive a clock signal, and a fourth end of the charge pump is connected to a negative pressure detection circuit in the RF switch chip; the charge pump is configured to generate a negative pressure.

16. The radio frequency switch chip according to claim 1, characterized in that: The RF switch chip also includes a negative voltage detection circuit, a first end of the negative voltage detection circuit is connected to the power supply end, a second end of the negative voltage detection circuit is grounded, a third end of the negative voltage detection circuit is configured to receive an enable signal, a fourth end of the negative voltage detection circuit is connected to the charge pump in the RF switch chip, and a fifth end of the negative voltage detection circuit is connected to the decoding drive circuit in the RF switch chip; the negative voltage detection circuit is configured to prevent negative pressure lock.

17. The radio frequency switch chip according to claim 1, characterized in that: The RF switch chip further comprises a decoding drive circuit, wherein a first end of the decoding drive circuit is connected to a power supply end, a second end of the decoding drive circuit is grounded, a third end of the decoding drive circuit is connected to a level conversion circuit in the RF switch chip, a fourth end of the decoding drive circuit is connected to a negative voltage detection circuit in the RF switch chip, a fifth end of the decoding drive circuit is connected to a charge pump in the RF switch chip, and a sixth end of the decoding drive circuit is connected to a switch circuit in the RF switch chip; The decoding driving circuit is configured to drive the switching circuit in the radio frequency switch chip.

18. A radio frequency switch chip, characterized in that: include: A protection module, the protection module comprising an input port and an output port, when the protection module is in a working state, the input port is configured to receive a first signal, and the output port is configured to output a second signal to a switch circuit in the RF switch chip; The protection module comprises a protection circuit, a first end of the protection circuit is connected to the input port, a second end of the protection circuit is grounded, and the protection circuit comprises a first protection branch and a second protection branch connected in parallel; The first protection branch includes M first diodes connected in series, an anode of a first diode at a head end of the M first diodes is connected to the input port, a cathode of a first diode at a terminal end of the M first diodes is grounded, M is a positive integer, and a conduction voltage of the first protection branch is greater than a voltage of the first signal; The second protection branch includes N second diodes connected in series, the cathode of the first second diode among the N second diodes is connected to the input port, the anode of the last second diode of the N second diodes is grounded, and N is a positive integer less than M.

19. The radio frequency switch chip according to claim 18, characterized in that: When the protection module is in a non-working state, the first protection branch is configured to release the positive pulse signal in the electrostatic signal of the input port to the ground, and the second protection branch is configured to release the negative pulse signal in the electrostatic signal of the input port to the ground.

20. A radio frequency front-end module, characterized in that: Comprising the radio frequency switch chip as described in any one of claims 1-19.

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