Radio frequency front-end module

Abstract

The invention relates to the technical field of integrated circuits, in particular to a radio frequency front-end module, which comprises a carrier comprising a first metal layer; the inductor comprises a first inductor wire wound on the first metal layer; and the first bonding wire is respectively connected with any two nodes on the first inductor routing wire. According to the invention, on the premise of reducing the number of design iterations, the impedance point of the radio frequency front-end module can be flexibly adjusted, so that the impedance point falls at the position of the most matched impedance point, and the radio frequency performance of the radio frequency front-end module is improved.

Description

Technical Field

[0001] The present application relates to the field of integrated circuit technology, and in particular to a radio frequency front-end module. Background Art

[0002] In related technologies, the RF front-end module includes chips such as power amplifiers, switches, low-noise amplifiers, filters, etc. In order to achieve impedance matching, it is necessary to add multiple components to the RF front-end module, which results in the RF front-end module being too large in area and too costly. Therefore, how to balance area, cost and performance has become a technical problem that needs to be solved urgently. Summary of the invention

[0003] In view of the above problems, an embodiment of the present application provides a radio frequency front-end module to solve the above technical problems.

[0004] The present application provides a radio frequency front-end module, including:

[0005] A carrier including a first metal layer;

[0006] an inductor, comprising a first inductor trace wound on the first metal layer; and

[0007] A first bonding wire, wherein the first bonding wire is respectively connected to any two nodes on the first inductor wiring.

[0008] Optionally, a first pad and a second pad are provided on the first inductor trace, a first end of the first bonding wire is connected to the first pad, and a second end of the first bonding wire is connected to the second pad.

[0009] Optionally, a distance between the first pad and the second pad is 100um-500um.

[0010] Optionally, the first inductor trace includes a plurality of edges connected in sequence, an angle is formed between two connected edges, and the first pad and the second pad are respectively arranged on the two edges of the first inductor trace connected to the same angle.

[0011] Optionally, at least two first bonding wires are connected between two sides of the same angle.

[0012] Optionally, the carrier further includes a second metal layer, and the first metal layer and the second metal layer are arranged in sequence along a first direction perpendicular to the carrier;

[0013] The inductor further includes a second inductor trace wound on the second metal layer, and the second inductor trace is connected to the first inductor trace through a metal through hole between the first metal layer and the second metal layer.

[0014] Optionally, it further includes a second bonding wire, wherein the second bonding wire is connected between the inductor and a working circuit disposed on the carrier;

[0015] The second bonding wire includes a first wire segment and a second wire segment connected together, one end of the first wire segment is connected to the working circuit, the other end of the first wire segment extends along a first direction perpendicular to the carrier and is connected to one end of the second wire segment, and the other end of the second wire segment extends obliquely relative to the first direction and is connected to the inductor.

[0016] Optionally, the height of the first line segment in the first direction is 2mi l-10mi l.

[0017] Optionally, the second bonding wire further includes a third line segment, the first line segment and the second line segment are connected as a whole through the third line segment, and the third line segment is perpendicular to the first line segment.

[0018] Optionally, the inductor is a first inductor, and / or the inductor is a second inductor;

[0019] The RF front-end module further includes an output matching module, and the output matching module includes the first inductor and / or the second inductor;

[0020] The first inductor is connected in series on a first connection path between the output end and the signal output end of the power amplifier module, one end of the second inductor is connected to the first connection path, and the other end of the second inductor is grounded.

[0021] Optionally, the carrier is a substrate;

[0022] The inductor is a third inductor;

[0023] The RF front-end module also includes a RF power amplifier chip disposed on the carrier, and the RF power amplifier chip includes a multi-stage power amplifier module;

[0024] The RF front-end module also includes an inter-stage matching module connected between two adjacent stages of the power amplification modules, and the inter-stage matching module includes the third inductor.

[0025] The RF front-end module provided in the embodiment of the present application includes a carrier, including a first metal layer; an inductor, including a first inductor trace wound on the first metal layer; and a first bonding wire, the first bonding wire being respectively connected to any two nodes on the first inductor trace; when the inductance value of the inductor is relatively large, the first bonding wire can be connected in parallel with the first inductor trace in the above manner, and the parasitic resistance of the inductor after parallel connection is reduced and the Q value (quality factor) is improved, thereby effectively reducing the overall insertion loss, and the first bonding wire and the first inductor trace being connected in parallel can adjust the impedance point of the RF front-end module within a certain range, so that it falls at the most matching impedance point position, thereby realizing flexible adjustment of the impedance point of the RF front-end module without adding additional components and occupying area, thereby improving the RF performance of the RF front-end module and reducing iteration time.

[0026] The embodiment of the present application provides a radio frequency front-end module, including: a substrate, and an inductor and a first chip arranged on the substrate;

[0027] The signal transmission port of the first chip is connected to the inductor through a second bonding wire;

[0028] The second bonding wire includes a first wire segment and a second wire segment connected together, one end of the first wire segment is connected to the signal transmission port of the first chip, the other end of the first wire segment extends along a first direction and is connected to one end of the second wire segment, the other end of the second wire segment extends obliquely relative to the first direction and is connected to the inductor, and the first direction is perpendicular to the substrate.

[0029] Optionally, the height of the first line segment in the first direction is 2mi l-10mi l.

[0030] Optionally, the second bonding wire further includes a third line segment, the first line segment and the second line segment are connected as a whole through the third line segment, and the third line segment is perpendicular to the first line segment.

[0031] Optionally, the first chip is a radio frequency power amplifier chip.

[0032] The RF front-end module provided in the embodiment of the present application includes a substrate, an inductor and a first chip arranged on the substrate; the signal transmission port of the first chip is connected to the inductor through a second bonding wire; the second bonding wire includes a first line segment and a second line segment connected together, one end of the first line segment is connected to the signal transmission port of the first chip, the other end of the first line segment extends along a first direction and is connected to one end of the second line segment, and the other end of the second line segment extends obliquely relative to the first direction and is connected to the inductor; the second bonding wire can be regarded as a part of the inductor, when the inductance value of the inductor is relatively small, the inductance value of the inductor can be increased by increasing the length of the second bonding wire, and by adjusting the length of the second bonding wire, the impedance point of the RF front-end module can be adjusted within a certain range so that it falls at the most matching impedance point position, so that the impedance point of the RF front-end module can be flexibly adjusted without adding additional components and occupying area, thereby improving the RF performance of the RF front-end module and reducing iteration time.

[0033] The embodiment of the present application provides a radio frequency front-end module, including: a substrate, and an inductor and a first component arranged on the substrate;

[0034] One end of the first component is connected to the inductor via a second bonding wire;

[0035] The second bonding wire includes a first wire segment and a second wire segment connected together, one end of the first wire segment is connected to one end of the first component, the other end of the first wire segment extends along the first direction and is connected to one end of the second wire segment, the other end of the second wire segment extends obliquely relative to the first direction and is connected to the inductor, and the first direction is perpendicular to the substrate.

[0036] Optionally, the height of the first line segment in the first direction is 2mi l-10mi l.

[0037] Optionally, the second bonding wire further includes a third line segment, the first line segment and the second line segment are connected as a whole through the third line segment, and the third line segment is perpendicular to the first line segment.

[0038] Optionally, the first component is a transistor.

[0039] The RF front-end module provided in the embodiment of the present application includes a substrate, an inductor and a first component arranged on the substrate; one end of the first component is connected to the inductor through a second bonding wire; the second bonding wire includes a first line segment and a second line segment connected together, one end of the first line segment is connected to one end of the first component, the other end of the first line segment extends along a first direction and is connected to one end of the second line segment, and the other end of the second line segment extends obliquely relative to the first direction and is connected to the inductor; the second bonding wire can be regarded as a part of the inductor, when the inductance value of the inductor is relatively small, the inductance value of the inductor can be increased by increasing the length of the second bonding wire, and by adjusting the length of the second bonding wire, the impedance point of the RF front-end module can be adjusted within a certain range so that it falls at the most matching impedance point position, so that the impedance point of the RF front-end module can be flexibly adjusted without adding additional components and occupying area, thereby improving the RF performance of the RF front-end module and reducing iteration time.

[0040] These and other aspects of the present application will become more clearly understood in the description of the following embodiments. BRIEF DESCRIPTION OF THE DRAWINGS

[0041] Figure 1 A schematic diagram of the top view of the structure of the RF front-end module provided in the first embodiment of the present application is shown.

[0042] Figure 2 A schematic diagram of the top view of the structure of the RF front-end module provided in the first embodiment of the present application is shown.

[0043] Figure 3 A schematic diagram of the top view of the structure of the RF front-end module provided in the first embodiment of the present application is shown.

[0044] Figure 4 A partial structural cross-sectional view of the RF front-end module provided in the first embodiment of the present application is shown.

[0045] Figure 5 A schematic diagram of the top view of the structure of the RF front-end module provided in the first embodiment of the present application is shown.

[0046] Figure 6 A front view structural schematic diagram of the radio frequency front end module provided in Example 1 of the present application is shown.

[0047] Figure 7 A front view structural schematic diagram of the radio frequency front end module provided in Example 1 of the present application is shown.

[0048] Figure 8 A schematic diagram of the top view of the structure of the RF front-end module provided in the first embodiment of the present application is shown.

[0049] Fig. 9A schematic diagram of a partial circuit of a radio frequency front-end module provided in Example 1 of the present application is shown.

[0050] Fig.10 A schematic diagram of the top view of the structure of the RF front-end module provided in the first embodiment of the present application is shown.

[0051] Fig.11 A block diagram showing the connection between the power amplifier module and the inter-stage matching module in the RF front-end module provided in the first embodiment of the present application is shown.

[0052] Fig.12 A schematic diagram of the top view of the structure of the RF front-end module provided in the first embodiment of the present application is shown.

[0053] Fig.13 A schematic diagram of the top view of the structure of the RF front-end module provided in the second embodiment of the present application is shown.

[0054] Fig.14 A front view structural schematic diagram of the radio frequency front end module provided in the second embodiment of the present application is shown.

[0055] Fig.15 A front view structural schematic diagram of the radio frequency front end module provided in the second embodiment of the present application is shown.

[0056] Fig.16 A schematic diagram of the top view of the structure of the RF front-end module provided in the third embodiment of the present application is shown.

[0057] Fig.17 A front view structural schematic diagram of the radio frequency front end module provided in Example 3 of the present application is shown.

[0058] Fig.18 A front view structural schematic diagram of the radio frequency front end module provided in Example 3 of the present application is shown. DETAILED DESCRIPTION

[0059] The embodiments of the present application are described in detail below, and examples of the embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals throughout represent the same or similar elements or elements having the same or similar functions. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain the present application, and cannot be understood as limiting the present application.

[0060] In order to enable those skilled in the art to better understand the solutions of the present application, the technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, rather than all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without making creative work are within the scope of protection of the present application.

[0061] In the embodiments of the present application, it should be noted that, in this article, relational terms such as first and second, etc. are merely used to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any actual relationship or order between these entities or operations.

[0062] Moreover, the terms "comprises," "comprising," or any other variation thereof are intended to encompass non-exclusive inclusion, such that a process, method, article, or apparatus that includes a list of elements includes not only those elements, but also other elements not explicitly listed, or elements inherent to such process, method, article, or apparatus. In the absence of further limitations, an element defined by the phrase "comprising a ..." does not exclude the presence of additional identical elements in the process, method, article, or apparatus that includes the element.

[0063] In the description of the embodiments of the present application, words such as "example" or "for example" are used to indicate examples, illustrations or descriptions. Any embodiment or design described as "example" or "for example" in the embodiments of the present application is not to be interpreted as being more preferred or having more advantages than another embodiment or design. The use of words such as "example" or "for example" is intended to present relative concepts in a clear manner.

[0064] In addition, the "plurality" in the embodiments of the present application refers to two or more than two. In view of this, in the embodiments of the present application, "plurality" can also be understood as "at least two". "At least one" can be understood as one or more, for example, one, two or more. For example, including at least one means including one, two or more, and there is no limit on which ones are included. For example, including at least one of A, B and C, then A, B, C, A and B, A and C, B and C, or A, B and C can be included.

[0065] It should be noted that, in the embodiments of the present application, "and / or" describes the association relationship of the associated objects, indicating that three relationships may exist. For example, A and / or B may represent: A exists alone, A and B exist at the same time, and B exists alone. In addition, the character " / ", unless otherwise specified, generally indicates that the associated objects before and after are in an "or" relationship.

[0066] It should be noted that in the embodiments of the present application, "connection" can be understood as electrical connection, and the connection between two electrical components can be a direct or indirect connection between the two electrical components. For example, the connection between A and B can be either a direct connection between A and B or an indirect connection between A and B through one or more other electrical components.

[0067] (Example 1)

[0068] An embodiment of the present application provides a radio frequency front-end module 100, including a carrier 110, an inductor 120 and a first bonding wire 130. Please refer to Figure 1 The carrier 110 includes a first metal layer 111, the inductor 120 includes a first inductor trace 121, the first inductor trace 121 is wound on the first metal layer 111, and the first bonding wire 130 is respectively connected to any two nodes on the first inductor trace 121. The carrier 110 may be a chip or a substrate.

[0069] In this embodiment, the first metal layer 111 is preferably the top metal layer of the carrier 110, that is, the first inductor trace 121 is the exposed part of the inductor 120. The first bonding wire 130 is respectively connected to any two nodes on the first inductor trace 121, that is, the first bonding wire 130 is connected in parallel with the first inductor trace 121, which can effectively reduce the inductance of the inductor 120. And the parasitic resistance of the inductor 120 after parallel connection is also reduced, and the Q value (quality factor) is improved, which effectively reduces the overall insertion loss. Moreover, the first bonding wire 130 and the first inductor trace 121 are connected in parallel to adjust the impedance point of the RF front-end module 100 within a certain range, so that it falls at the most matching impedance point position, so that the impedance point of the RF front-end module 100 can be flexibly adjusted without adding additional components and occupying area, thereby improving the RF performance of the RF front-end module 100 and reducing the iteration time.

[0070] In some embodiments, the inductor 120 may be any inductor element such as a matching inductor, a power supply inductor, etc. in the RF front-end module 100 .

[0071] In some embodiments, please refer to Figure 2 As shown, in order to facilitate the connection of the first bonding wire 130 , a first pad 141 and a second pad 142 are provided on the first inductor trace 121 , the first end of the first bonding wire 130 is connected to the first pad 141 , and the second end of the first bonding wire 130 is connected to the second pad 142 .

[0072] In some embodiments, please refer to Figure 2 As shown, the distance between the first pad 141 and the second pad 142 is 100um-500um. In this embodiment, by limiting the distance between the first pad 141 and the second pad 142 to 100um-500um, the length of the first bonding wire 130 is increased, thereby effectively reducing the inductance and overall insertion loss of the inductor 120.

[0073] As an example, the distance between the first pad 141 and the second pad 142 may be 100 um, 142 um, 200 um, 300 um, 350 um, or 500 um, etc.

[0074] It can be understood that, since the first bonding wire 130 is connected between the first pad 141 and the second pad 142, the length of the first bonding wire 130 is approximately equal to the distance between the first pad 141 and the second pad 142. The larger the distance between the first pad 141 and the second pad 142, the longer the length of the first bonding wire 130 can be, the larger the equivalent inductance value of the first bonding wire 130 is, the greater the reduction in the inductance value of the inductor 120 is, the smaller the distance between the first pad 141 and the second pad 142 is, the shorter the length of the first bonding wire 130 is, the smaller the equivalent inductance value of the first bonding wire 130 is, the smaller the reduction in the inductance value of the inductor 120 is, and the distance between the first pad 141 and the second pad 142 can be set according to actual conditions, which will not be elaborated here.

[0075] In some embodiments, please refer to Figure 2 As shown, the first inductor trace 121 includes a plurality of sides 1211, and the plurality of sides 1211 are connected in sequence, and an angle is formed between two connected sides 1211, and the first pad 141 and the second pad 142 are respectively arranged on the two sides 1211 of the first inductor trace 121 connected to the same angle. In the case where the length of the portion of the first inductor trace 121 connected in parallel with the first bonding wire 130 is the same, compared with arranging the first pad 141 and the second pad 142 on the same side 1211, arranging the first pad 141 and the second pad 142 on the two sides 1211 of the first inductor trace 121 connected to the same angle can not only effectively reduce the inductance value of the first inductor trace 121, but also avoid the non-compact layout caused by the excessive length of the bonding wire, so that the layout of the RF front-end module 100 is more neat and compact.

[0076] As an implementation method, the angle between the two connected edges 1211 may be 90°. Figure 2 It should be noted that, in other embodiments, the angle between the two connected side portions 1211 may also be other angles, which can be set according to actual conditions and will not be described in detail here.

[0077] As an implementation, please refer to Figure 2 As shown, at least two first bonding wires 130 are connected between two side portions 1211 of the same angle.

[0078] As an example, please refer to Figure 3, the RF front-end module 100 includes a first inductor 120a, the first inductor 120a includes a first inductor trace 121a, the first inductor trace 121a includes a first side 1211a, a second side 1211b, a third side 1211c and a fourth side 1211d connected in sequence, and an angle is formed between the two connected sides 1211. A first pad 141a is provided on the first side 1211a, a second pad 142a and a first pad 141b are provided on the second side 1211b, and a second pad 142b is provided on the third side 1211c. The RF front-end module 100 also includes a first bonding wire 130a and a first bonding wire 130b, wherein the first bonding wire 130a is connected to the first pad 141a and the second pad 142a, and the first bonding wire 130b is connected to the first pad 141b and the second pad 142b. The RF front-end module 100 further includes a second inductor 120b, which includes a first inductor trace 121b, which includes a first side 1211e, a second side 1211f, a third side 1211g, a fourth side 1211h, and a fifth side 1211i connected in sequence, and an angle is formed between the two connected sides 1211. A first pad 141c is provided on the second side 1211f, a second pad 142c and a first pad 141d are provided on the third side 1211g, a second pad 142d and a first pad 141e are provided on the fourth side 1211h, and a second pad 142e is provided on the fifth side 1211i. The RF front-end module 100 also includes a first bonding wire 130c, a first bonding wire 130d and a first bonding wire 130e, wherein the first bonding wire 130c is connected to the first pad 141c and the second pad 142c, the first bonding wire 130d is connected to the first pad 141d and the second pad 142d, and the first bonding wire 130e is connected to the first pad 141e and the second pad 142e.

[0079] In this example, multiple groups of first bonding wires 130 are respectively arranged on the first inductor trace 121a and the first inductor trace 121b, which can effectively reduce the inductance of the inductor 120 while controlling the length of the first bonding wire 130, thereby not only making the layout of the RF front-end module 100 more neat and compact, but also expanding the adjustment range of the impedance point of the RF front-end module 100, so that the impedance point of the RF front-end module 100 falls at the optimal impedance point position, thereby improving the RF performance of the RF front-end module 100.

[0080] In some embodiments, please refer to Figure 4As shown, the carrier 110 further includes a second metal layer 112, and the first metal layer 111 and the second metal layer 112 are sequentially arranged along a first direction perpendicular to the carrier 110, wherein the first metal layer 111 is a top metal layer. The inductor 120 further includes a second inductor trace 122, and the second inductor trace 122 is wound on the second metal layer 112, and the second inductor trace 122 is connected to the first inductor trace 121 through a metal through hole 113 between the first metal layer 111 and the second metal layer 112.

[0081] In this embodiment, in addition to the first inductor trace 121 located in the top metal layer, that is, the first metal layer 111, the inductor 120 also includes a second inductor trace 122 located in the second metal layer 112. This can reduce the occupied area of ​​the inductor 120 in the first metal layer 111, making it easier to arrange other components on the carrier 110, thereby making the layout of the RF front-end module 100 more compact.

[0082] In some embodiments, please refer to Figure 5 As shown, the RF front-end module 100 further includes a second bonding wire 150 , and the second bonding wire 150 is connected between the inductor 120 and a working circuit 160 disposed on the carrier 110 .

[0083] In some embodiments, please refer to Figure 5 As shown, a plurality of second bonding wires 150 are connected between the inductor 120 and the working circuit 160. In this embodiment, the second bonding wires 150 can be regarded as part of the inductor 120. Without changing the overall layout of the RF front-end module 100, the inductance of the inductor 120 can be adjusted by adjusting the number of second bonding wires 150. As an example, when the inductance of the inductor 120 is relatively small, the number of second bonding wires 150 can be reduced. For example, four second bonding wires 150 can be reduced to three second bonding wires 150 or two second bonding wires 150, and so on. This embodiment has a simple structure, does not need to change the overall layout of the RF front-end module 100, reduces the iteration time, can adjust the impedance point of the RF front-end module 100 within a certain range, and allows the impedance point of the RF front-end module 100 to fall at the optimal impedance point position, thereby improving the RF performance of the RF front-end module 100.

[0084] As an example, the number of the second bonding wires 150 may be two, three, or four, etc., which can be set according to actual conditions and will not be elaborated herein.

[0085] In some embodiments, please refer to Figure 6As shown, the second bonding wire 150 includes a first wire segment 151 and a second wire segment 152 connected together, one end of the first wire segment 151 is connected to the working circuit 160, the other end of the first wire segment 151 extends along the first direction and is connected to one end of the second wire segment 152, and the other end of the second wire segment 152 extends obliquely relative to the first direction and is connected to the inductor 120.

[0086] In this embodiment, the second bonding wire 150 can be regarded as a part of the inductor 120. Without changing the overall layout of the RF front-end module 100, that is, without changing the distance between the inductor 120 and the working circuit 160, the inductance of the inductor 120 can be adjusted by adjusting the length of the second bonding wire 150. For example, when the inductance of the inductor 120 is too small, the length of the second bonding wire 150 can be increased, that is, the height h of the first line segment 151 is increased and the length of the second line segment 152 is increased accordingly, so that the winding length of the inductor 120 becomes longer, thereby increasing the inductance of the inductor 120. The structure is simple, there is no need to change the overall layout of the RF front-end module 100, the iteration time is reduced, and the impedance point of the RF front-end module 100 can be adjusted within a certain range, so that the impedance point of the RF front-end module 100 falls at the optimal impedance point position, thereby improving the RF performance of the RF front-end module 100. It can be understood that shortening the length of the second bonding wire 150 can shorten the winding length of the inductor 120 , thereby reducing the inductance of the inductor 120 .

[0087] As an implementation manner, the height h of the first line segment 151 is 2mil-10mil, which is not only convenient for connection with the working circuit 160 but also does not affect the packaging of the RF front-end module 100.

[0088] As an example, the height h of the first line segment 151 can be 2mil, 3mil, 5mil, 6mil, 8mil, or 10mil, etc.

[0089] It is understandable that the height h of the first line segment 151 can be set according to actual conditions, which will not be elaborated here.

[0090] In some embodiments, please refer to Figure 7 As shown, the second bonding wire 150 further includes a third line segment 153 , the first line segment 151 and the second line segment 152 are connected as a whole through the third line segment 153 , and the third line segment 153 is perpendicular to the first line segment 151 .

[0091] In this embodiment, the second bonding wire 150 can be regarded as a part of the inductor 120. Without changing the overall layout of the RF front-end module 100, that is, without changing the distance between the inductor 120 and the working circuit 160, the inductance of the inductor 120 can be adjusted by adjusting the length of the third line segment 153 and correspondingly adjusting the length of the second line segment 152. For example, when the inductance of the inductor 120 is too small, the length of the third line segment 153 can be increased, and the length of the second line segment 152 can be increased accordingly, so that the winding length of the inductor 120 becomes longer, thereby increasing the inductance of the inductor 120. The structure is simple, there is no need to change the overall layout of the RF front-end module 100, the iteration time is reduced, and the adjustment range of the impedance point of the RF front-end module 100 can be expanded, so that the impedance point of the RF front-end module 100 falls at the optimal impedance point position, thereby improving the RF performance of the RF front-end module 100. It can be understood that shortening the length of the third line segment 153 can shorten the winding length of the inductor 120 , thereby reducing the inductance of the inductor 120 .

[0092] It should be noted that, in some implementations, the lengths of the first line segment 151 , the second line segment 152 , and the third line segment 153 may be adjusted simultaneously according to actual conditions, which will not be elaborated herein.

[0093] In some embodiments, please refer to Figure 8 As shown, the RF front-end module 100 includes at least one inductor 120, at least part of the inductor 120 is a first inductor 120a, and / or at least part of the inductor 120 is a second inductor 120b. The RF front-end module 100 also includes an output matching module 170, and the output matching module 170 includes at least one of the first inductor 120a and the second inductor 120b. Please refer to Fig. 9 As shown, the first inductor 120a is connected in series on a first connection path between the output terminal 182 of the power amplifier module and the signal output terminal 200, one end of the second inductor 120b is connected to the first connection path, and the other end of the second inductor 120b is grounded.

[0094] In this embodiment, the output matching module 170 includes at least one of the first inductor 120a and the second inductor 120b. When the inductance of the first inductor 120a is too large, the inductance of the first inductor 120a can be reduced through the first bonding wire 130, and when the inductance of the second inductor 120b is too large, the inductance of the second inductor 120b can be reduced through the first bonding wire 130; when the inductance of the first inductor 120a is too small, the inductance of the first inductor 120a can be increased through the second bonding wire 150a, and when the inductance of the second inductor 120b is too small, the inductance of the second inductor 120b can be increased through the second bonding wire 150b; thereby obtaining a suitable inductance.

[0095] In some embodiments, the carrier 110 is a substrate. Since a multi-layer substrate can increase the number of metal layers, the quality factor of the metal can be improved. Therefore, in the related art, in order to reduce the overall insertion loss, a multi-layer substrate is often used. However, the use of a multi-layer substrate increases the cost. In this embodiment, the first bonding wire 130 is provided to improve the quality factor of the inductor 120, thereby reducing the insertion loss and reducing the number of substrate layers, which not only makes the structure simpler and easier to design, but also reduces the production cost.

[0096] In some embodiments, please refer to Fig.10 As shown, the RF front-end module 100 includes at least one inductor 120, at least part of the inductor 120 is a third inductor 120c. The third inductor 120c includes a first inductor trace 121c, the first inductor trace 121c is wound on the first metal layer 111, and the first bonding wire 130f is respectively connected to any two nodes on the first inductor trace 121c. The RF front-end module 100 also includes an RF power amplifier chip 180, the RF power amplifier chip 180 is arranged on the carrier 110, and the RF power amplifier chip 180 includes a multi-stage power amplifier module 181. Please refer to Fig.11 As shown, the RF front-end module 100 further includes an inter-stage matching module 190 connected between two adjacent stages of the power amplification modules 181 , and the inter-stage matching module 190 includes a third inductor 120 c.

[0097] As an implementation, please refer to Fig.12 As shown, the inductor 120 may include a first inductor 120a, a second inductor 120b and a third inductor 120c. The output matching module 170 includes the first inductor 120a and the second inductor 120b. The inter-stage matching module 190 includes the third inductor 120c.

[0098] (Example 2)

[0099] An embodiment of the present application provides a radio frequency front-end module 300, including a substrate 310, an inductor 320 and a first chip 380, please refer to Fig.13 The inductor 320 and the first chip 380 are arranged on the substrate 310, and the signal transmission port of the first chip 380 is connected to the inductor 320 through the second bonding wire 350. Fig.14 As shown, the second bonding wire 350 includes a first wire segment 351 and a second wire segment 352 connected together, one end of the first wire segment 351 is connected to the signal transmission port of the first chip 380, the other end of the first wire segment 351 extends along the first direction and is connected to one end of the second wire segment 352, and the other end of the second wire segment 352 extends obliquely relative to the first direction and is connected to the inductor 320. The first direction is perpendicular to the substrate 310.

[0100] In this embodiment, the second bonding wire 350 can be regarded as a part of the inductor 320. When the inductance of the inductor 320 is relatively small, the inductance of the inductor 320 can be increased by increasing the length of the second bonding wire 350. In addition, by adjusting the length of the second bonding wire 350, the impedance point of the RF front-end module 300 can be adjusted within a certain range to fall at the most matching impedance point position, so that the impedance point of the RF front-end module 300 can be flexibly adjusted without adding additional components and occupying area, thereby improving the RF performance of the RF front-end module 300 and reducing iteration time.

[0101] As an example, when the inductance value of the inductor 320 is small, the height h of the first line segment 351 can be increased and the length of the second line segment 352 can be increased accordingly, so that the winding length of the inductor 320 becomes longer, thereby increasing the inductance value of the inductor 320. The structure is simple, and there is no need to change the overall layout of the RF front-end module 300, which reduces the iteration time, and can adjust the impedance point of the RF front-end module 300 within a certain range, so that the impedance point of the RF front-end module 300 falls at the optimal impedance point position, thereby improving the RF performance of the RF front-end module 300. It can be understood that shortening the length of the second bonding wire 350 can shorten the winding length of the inductor 320, thereby reducing the inductance value of the inductor 320.

[0102] In some embodiments, please refer to Fig.13 As shown, a plurality of second bonding wires 350 are connected between the inductor 320 and the first chip 380. In this embodiment, the second bonding wires 350 can be regarded as part of the inductor 320. Without changing the overall layout of the RF front-end module 300, the inductance of the inductor 320 can be adjusted by adjusting the number of second bonding wires 350. As an example, when the inductance of the inductor 320 is small, the number of second bonding wires 350 can be reduced. For example, four second bonding wires 350 can be reduced to three second bonding wires 350 or two second bonding wires 350, and so on. This embodiment has a simple structure, does not need to change the overall layout of the RF front-end module 300, reduces the iteration time, can adjust the impedance point of the RF front-end module 300 within a certain range, and allows the impedance point of the RF front-end module 300 to fall at the optimal impedance point position, thereby improving the RF performance of the RF front-end module 300.

[0103] As an example, the number of the second bonding wires 350 may be two, three, or four, etc., which can be set according to actual conditions and will not be elaborated herein.

[0104] As an implementation manner, the height h of the first line segment 351 is 2mil-10mil, which is not only convenient for connection with the first chip 380 but also does not affect the packaging of the RF front-end module 300.

[0105] As an example, the height h of the first line segment 351 can be 2mil, 3mil, 5mil, 6mil, 8mil, or 10mil, etc.

[0106] It is understandable that the height h of the first line segment 351 can be set according to actual conditions, which will not be elaborated here.

[0107] In some embodiments, please refer to Fig.15 As shown, the second bonding wire 350 further includes a third line segment 353 , the first line segment 351 and the second line segment 352 are connected as a whole through the third line segment 353 , and the third line segment 353 is perpendicular to the first line segment 351 .

[0108] In this embodiment, the second bonding wire 350 can be regarded as a part of the inductor 320. Without changing the overall layout of the RF front-end module 300, that is, without changing the distance between the inductor 320 and the working circuit, the inductance of the inductor 320 can be adjusted by adjusting the length of the third line segment 353 and correspondingly adjusting the length of the second line segment 352. For example, when the inductance of the inductor 320 is relatively small, the length of the third line segment 353 can be increased, and the length of the second line segment 352 can be increased accordingly, so that the winding length of the inductor 320 becomes longer, thereby increasing the inductance of the inductor 320. The structure is simple, there is no need to change the overall layout of the RF front-end module 300, the iteration time is reduced, and the adjustment range of the impedance point of the RF front-end module 300 can be expanded, so that the impedance point of the RF front-end module 300 falls at the optimal impedance point position, thereby improving the RF performance of the RF front-end module 300. It can be understood that shortening the length of the third line segment 353 can shorten the winding length of the inductor 320, thereby reducing the inductance of the inductor 320.

[0109] It should be noted that, in some implementations, the lengths of the first line segment 351 , the second line segment 352 , and the third line segment 353 may be adjusted simultaneously according to actual conditions, which will not be elaborated herein.

[0110] In some embodiments, the first chip 380 is a radio frequency power amplifier chip.

[0111] It should be noted that the second embodiment is substantially the same as the first embodiment, so the same parts will not be described again here.

[0112] (Example 3)

[0113] An embodiment of the present application provides a radio frequency front-end module 400, including a substrate 410, an inductor 420 and a first component 480, wherein the inductor 420 and the first component 480 are arranged on the substrate 410, please refer to Fig.16One end of the first component 480 is connected to the inductor 420 via the second bonding wire 450. Fig.17 The second bonding wire 450 includes a first wire segment 451 and a second wire segment 452 connected together, one end of the first wire segment 451 is connected to one end of the first component 480, the other end of the first wire segment 451 extends along the first direction and is connected to one end of the second wire segment 452, and the other end of the second wire segment 452 extends obliquely relative to the first direction and is connected to the inductor 420. The first direction is perpendicular to the substrate 410.

[0114] In this embodiment, the second bonding wire 450 can be regarded as a part of the inductor 420. When the inductance of the inductor 420 is relatively small, the inductance of the inductor 420 can be increased by increasing the length of the second bonding wire 450. In addition, by adjusting the length of the second bonding wire 450, the impedance point of the RF front-end module 400 can be adjusted within a certain range so that it falls at the most matching impedance point position. Therefore, the impedance point of the RF front-end module can be flexibly adjusted without adding additional components and occupying area, thereby improving the RF performance of the RF front-end module 400 and reducing iteration time.

[0115] As an example, when the inductance value of the inductor 420 is small, the height h of the first line segment 451 can be increased and the length of the second line segment 452 can be increased accordingly, so that the winding length of the inductor 420 becomes longer, thereby increasing the inductance value of the inductor 420. The structure is simple, and there is no need to change the overall layout of the RF front-end module 400, which reduces the iteration time, and can adjust the impedance point of the RF front-end module 400 within a certain range, so that the impedance point of the RF front-end module 400 falls at the optimal impedance point position, thereby improving the RF performance of the RF front-end module 400. It can be understood that shortening the length of the second bonding wire 450 can shorten the winding length of the inductor 420, thereby reducing the inductance value of the inductor 420.

[0116] In some embodiments, please refer to Fig.16As shown, a plurality of second bonding wires 450 are connected between the inductor 420 and the first component 480. In this embodiment, the second bonding wires 450 can be regarded as part of the inductor 420. Without changing the overall layout of the RF front-end module 400, the inductance of the inductor 420 can be adjusted by adjusting the number of second bonding wires 450. As an example, when the inductance of the inductor 420 is small, the number of second bonding wires 450 can be reduced. For example, the four second bonding wires 450 can be reduced to three second bonding wires 450 or two second bonding wires 450, and so on. This embodiment has a simple structure, does not need to change the overall layout of the RF front-end module 400, reduces the iteration time, can adjust the impedance point of the RF front-end module 400 within a certain range, and allows the impedance point of the RF front-end module 400 to fall at the optimal impedance point position, thereby improving the RF performance of the RF front-end module 400.

[0117] As an example, the number of the second bonding wires 450 may be two, three, or four, etc., which can be set according to actual conditions and will not be elaborated herein.

[0118] As an implementation manner, the height of the first line segment 451 is 2mil-10mil, which is not only convenient for connection with the first component 480 but also does not affect the packaging of the RF front-end module 400.

[0119] As an example, the height of the first line segment 451 can be 2mil, 3mil, 5mil, 6mil, 8mil, or 10mil, etc.

[0120] It is understandable that the height of the first line segment 451 can be set according to actual conditions, which will not be elaborated here.

[0121] In some embodiments, please refer to Fig.18 As shown, the second bonding wire 450 further includes a third line segment 453 , the first line segment 451 and the second line segment 452 are connected as a whole through the third line segment 453 , and the third line segment 453 is perpendicular to the first line segment 451 .

[0122] In this embodiment, the second bonding wire 450 can be regarded as a part of the inductor 420. Without changing the overall layout of the RF front-end module 400, that is, without changing the distance between the inductor 420 and the working circuit, the inductance of the inductor 420 can be adjusted by adjusting the length of the third line segment 453 and correspondingly adjusting the length of the second line segment 452. For example, when the inductance of the inductor 420 is small, the length of the third line segment 453 can be increased, and the length of the second line segment 452 can be increased accordingly, so that the winding length of the inductor 420 becomes longer, thereby increasing the inductance of the inductor 420. The structure is simple, there is no need to change the overall layout of the RF front-end module 400, the iteration time is reduced, and the adjustment range of the impedance point of the RF front-end module 400 can be expanded, so that the impedance point of the RF front-end module 400 falls at the optimal impedance point position, thereby improving the RF performance of the RF front-end module 400. It can be understood that shortening the length of the third line segment 453 can shorten the winding length of the inductor 420, thereby reducing the inductance of the inductor 420.

[0123] It should be noted that, in some implementations, the lengths of the first line segment 451 , the second line segment 452 , and the third line segment 453 may be adjusted simultaneously according to actual conditions, which will not be elaborated herein.

[0124] In some embodiments, the first component 480 is a transistor.

[0125] Optionally, the transistor may be a metal oxide semiconductor (MOS) field effect transistor, a bipolar junction transistor (BJT), or a heterojunction bipolar transistor (HBT).

[0126] It should be noted that the third embodiment is substantially the same as the first embodiment, so the same parts will not be described again here.

[0127] The above is only an implementation method of the present application. It should be pointed out that a person skilled in the art can make improvements without departing from the inventive concept of the present application, but these improvements are within the scope of protection of the present application.

Claims

1. A radio frequency front-end module, characterized in that: include: A carrier including a first metal layer; An inductor, comprising a first inductor trace wound on the first metal layer; and A first bonding wire, wherein the first bonding wire is respectively connected to any two nodes on the first inductor wiring.

2. The RF front-end module according to claim 1, characterized in that: A first pad and a second pad are disposed on the first inductor trace, a first end of the first bonding wire is connected to the first pad, and a second end of the first bonding wire is connected to the second pad.

3. The RF front-end module according to claim 2, characterized in that: The distance between the first pad and the second pad is 100um-500um.

4. The RF front-end module according to claim 2, characterized in that: The first inductor trace includes a plurality of edges connected in sequence, an angle is formed between two connected edges, and the first pad and the second pad are respectively arranged on the two edges of the first inductor trace connected to the same angle.

5. The RF front-end module according to claim 4, characterized in that: At least two first bonding wires are connected between the two sides of the same angle.

6. The RF front-end module according to claim 1, characterized in that: The carrier further includes a second metal layer, and the first metal layer and the second metal layer are sequentially arranged along a first direction perpendicular to the carrier; The inductor further includes a second inductor trace wound on the second metal layer, and the second inductor trace is connected to the first inductor trace through a metal through hole between the first metal layer and the second metal layer.

7. The RF front-end module according to claim 1, characterized in that: It also includes a second bonding wire, which is connected between the inductor and a working circuit disposed on the carrier; The second bonding wire includes a first wire segment and a second wire segment connected together, one end of the first wire segment is connected to the working circuit, the other end of the first wire segment extends along a first direction perpendicular to the carrier and is connected to one end of the second wire segment, and the other end of the second wire segment extends obliquely relative to the first direction and is connected to the inductor.

8. The RF front-end module according to claim 7, characterized in that: The height of the first line segment in the first direction is 2 mil-10 mil.

9. The RF front-end module according to claim 7, characterized in that: The second bonding wire further includes a third line segment, the first line segment and the second line segment are connected as a whole through the third line segment, and the third line segment is perpendicular to the first line segment.

10. The radio frequency front-end module according to claim 1, characterized in that: The inductor is a first inductor, and / or the inductor is a second inductor; The RF front-end module further includes an output matching module, and the output matching module includes the first inductor and / or the second inductor; The first inductor is connected in series on a first connection path between the output end and the signal output end of the power amplifier module, one end of the second inductor is connected to the first connection path, and the other end of the second inductor is grounded.

11. The RF front-end module according to claim 1, characterized in that: The carrier is a substrate; the inductor is a third inductor; The RF front-end module also includes a RF power amplifier chip disposed on the carrier, and the RF power amplifier chip includes a multi-stage power amplifier module; The RF front-end module also includes an inter-stage matching module connected between two adjacent stages of the power amplification modules, and the inter-stage matching module includes the third inductor.

12. A radio frequency front-end module, characterized in that: include: A substrate, and an inductor and a first chip disposed on the substrate; The signal transmission port of the first chip is connected to the inductor through a second bonding wire; The second bonding wire includes a first wire segment and a second wire segment connected together, one end of the first wire segment is connected to the signal transmission port of the first chip, the other end of the first wire segment extends along a first direction and is connected to one end of the second wire segment, the other end of the second wire segment extends obliquely relative to the first direction and is connected to the inductor, and the first direction is perpendicular to the substrate.

13. The RF front-end module according to claim 12, characterized in that: The height of the first line segment in the first direction is 2 mil-10 mil.

14. The radio frequency front-end module according to claim 12, characterized in that: The second bonding wire further includes a third line segment, the first line segment and the second line segment are connected as a whole through the third line segment, and the third line segment is perpendicular to the first line segment.

15. The radio frequency front-end module according to claim 12, characterized in that: The first chip is a radio frequency power amplifier chip.

16. A radio frequency front-end module, characterized in that: include: A substrate, and an inductor and a first component arranged on the substrate; One end of the first component is connected to the inductor via a second bonding wire; The second bonding wire includes a first wire segment and a second wire segment connected together, one end of the first wire segment is connected to one end of the first component, the other end of the first wire segment extends along a first direction and is connected to one end of the second wire segment, the other end of the second wire segment extends obliquely relative to the first direction and is connected to the inductor, and the first direction is perpendicular to the substrate.

17. The radio frequency front-end module according to claim 16, characterized in that: The height of the first line segment in the first direction is 2 mil-10 mil.

18. The radio frequency front-end module according to claim 16, characterized in that: The second bonding wire further includes a third line segment, the first line segment and the second line segment are connected as a whole through the third line segment, and the third line segment is perpendicular to the first line segment.

19. The radio frequency front-end module according to claim 16, characterized in that: The first component is a transistor.

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