A radio frequency front end module

Abstract

The application relates to the technical field of integrated circuits, in particular to a radio frequency front-end module, which comprises a carrier body comprising a first metal layer, an inductor comprising first inductor wires wound on the first metal layer, and a first bonding wire connected with any two nodes on the first inductor wires respectively. The application can flexibly adjust the impedance point of the radio frequency front-end module under the premise of reducing the number of design iterations, so that the impedance point falls in the most matched impedance point position, and the radio frequency performance of the radio frequency front-end module is improved.

Description

Technical Field

[0001] This application relates to the field of integrated circuit technology, and in particular to a radio frequency front-end module. Background Technology

[0002] In related technologies, radio frequency (RF) front-end modules include chips such as power amplifiers, switches, low-noise amplifiers, and filters. However, to achieve impedance matching, multiple additional components are needed in the RF front-end module, resulting in excessively large area and high cost. Therefore, balancing area, cost, and performance has become a pressing technical problem to be solved. Summary of the Invention

[0003] In view of the above problems, this application provides a radio frequency front-end module to solve the above technical problems.

[0004] This application provides a radio frequency front-end module, including:

[0005] The carrier includes a first metal layer;

[0006] An inductor, including a first inductor trace wound on the first metal layer; and

[0007] The first bonding wire is connected to any two nodes on the first inductor trace.

[0008] Optionally, the first inductor trace is provided with a first pad and a second pad, a first end of the first bonding wire is connected to the first pad, and a second end of the first bonding wire is connected to the second pad.

[0009] Optionally, the distance between the first pad and the second pad is 100um-500um.

[0010] Optionally, the first inductor trace includes a plurality of sides connected in sequence, with an included angle between two connected sides, and the first pad and the second pad are respectively disposed on the two sides of the first inductor trace connected to the same included angle.

[0011] Optionally, at least two first bonding lines are connected between the two sides of the same included angle.

[0012] Optionally, the carrier further includes a second metal layer, wherein the first metal layer and the second metal layer are sequentially disposed along a first direction perpendicular to the carrier;

[0013] The inductor also includes a second inductor trace wound on the second metal layer, the second inductor trace being connected to the first inductor trace through a metal via between the first metal layer and the second metal layer.

[0014] Optionally, it further includes a second bonding wire, which is connected between the inductor and the working circuit disposed on the carrier;

[0015] The second bonding wire includes a first segment and a second segment connected as one piece. One end of the first segment is connected to the working circuit, and the other end of the first segment extends along a first direction perpendicular to the carrier and is connected to one end of the second segment. The other end of the second segment extends at an angle relative to the first direction and is connected to the inductor.

[0016] Optionally, the height of the first line segment in the first direction is 2 mm to 10 mm.

[0017] Optionally, the second bonding wire further includes a third segment, wherein the first segment and the second segment are connected as one unit through the third segment, and the third segment is perpendicular to the first segment.

[0018] Optionally, the inductor is a first inductor, and / or the inductor is a second inductor;

[0019] The RF front-end module further includes an output matching module, which includes the first inductor and / or the second inductor.

[0020] The first inductor is connected in series in the first connection path between the output terminal and the signal output terminal of the power amplifier module, one end of the second inductor is connected to the first connection path, and the other end of the second inductor is grounded.

[0021] Optionally, the carrier is a substrate;

[0022] The inductor is a third inductor;

[0023] The radio frequency front-end module also includes a radio frequency power amplifier chip disposed on the carrier, and the radio frequency power amplifier chip includes a multi-stage power amplifier module.

[0024] The radio frequency front-end module also includes an interstage matching module connected between two adjacent power amplifier modules, and the interstage matching module includes the third inductor.

[0025] The RF front-end module provided in this application includes a carrier, including a first metal layer; an inductor, including a first inductor trace wound on the first metal layer; and a first bonding wire, which is connected to any two nodes on the first inductor trace. When the inductance value is too large, the first bonding wire and the first inductor trace can be connected in parallel in the above manner. The parasitic resistance of the inductor after parallel connection is reduced and the Q value (quality factor) is increased, which effectively reduces the overall insertion loss. Moreover, the parallel connection of the first bonding wire and the first inductor trace can adjust the impedance point of the RF front-end module within a certain range, so that it falls at the most matched impedance point position. Thus, the impedance point of the RF front-end module can be flexibly adjusted without adding additional components and occupying area, thereby improving the RF performance of the RF front-end module and reducing the iteration time.

[0026] This application provides a radio frequency front-end module, including: a substrate, and an inductor and a first chip disposed on the substrate;

[0027] The signal transmission port of the first chip is connected to the inductor via a second bonding wire;

[0028] The second bonding wire includes a first segment and a second segment that are integrally connected. One end of the first segment is connected to the signal transmission port of the first chip, and the other end of the first segment extends along a first direction and is connected to one end of the second segment. The other end of the second segment extends at an angle relative to the first direction and is connected to the inductor. The first direction is perpendicular to the substrate.

[0029] Optionally, the height of the first line segment in the first direction is 2 mm to 10 mm.

[0030] Optionally, the second bonding wire further includes a third segment, wherein the first segment and the second segment are connected as one unit through the third segment, and the third segment is perpendicular to the first segment.

[0031] Optionally, the first chip is an radio frequency power amplifier chip.

[0032] The RF front-end module provided in this application includes a substrate, an inductor and a first chip disposed on the substrate; the signal transmission port of the first chip is connected to the inductor through a second bonding wire; the second bonding wire includes a first segment and a second segment integrated together, one end of the first segment is connected to the signal transmission port of the first chip, the other end of the first segment extends along a first direction and is connected to one end of the second segment, and the other end of the second segment extends obliquely relative to the first direction and is connected to the inductor; the second bonding wire can be regarded as part of the inductor. When the inductance value is too small, the inductance value can be increased by increasing the length of the second bonding wire. Furthermore, by adjusting the length of the second bonding wire, the impedance point of the RF front-end module can be adjusted within a certain range to fall at the most matched impedance point position. Thus, the impedance point of the RF front-end module can be flexibly adjusted without adding additional components and occupying area, thereby improving the RF performance of the RF front-end module and reducing the iteration time.

[0033] This application provides a radio frequency front-end module, including: a substrate, and an inductor and a first component disposed on the substrate;

[0034] One end of the first component is connected to the inductor via a second bonding wire;

[0035] The second bonding wire includes a first segment and a second segment that are integrally connected. One end of the first segment is connected to one end of the first component. The other end of the first segment extends along the first direction and is connected to one end of the second segment. The other end of the second segment extends at an angle relative to the first direction and is connected to the inductor. The first direction is perpendicular to the substrate.

[0036] Optionally, the height of the first line segment in the first direction is 2 mm to 10 mm.

[0037] Optionally, the second bonding wire further includes a third segment, wherein the first segment and the second segment are connected by the third segment, and the third segment is perpendicular to the first segment.

[0038] Optionally, the first component is a transistor.

[0039] The RF front-end module provided in this application includes a substrate, an inductor and a first component disposed on the substrate; one end of the first component is connected to the inductor via a second bonding wire; the second bonding wire includes a first segment and a second segment integrally connected, one end of the first segment is connected to one end of the first component, the other end of the first segment extends along a first direction and is connected to one end of the second segment, and the other end of the second segment extends obliquely relative to the first direction and is connected to the inductor; the second bonding wire can be regarded as part of the inductor. When the inductance value is too small, the inductance value can be increased by increasing the length of the second bonding wire. Furthermore, by adjusting the length of the second bonding wire, the impedance point of the RF front-end module can be adjusted within a certain range to fall at the most matched impedance point position. Thus, the impedance point of the RF front-end module can be flexibly adjusted without adding additional components or occupying area, thereby improving the RF performance of the RF front-end module and reducing the iteration time.

[0040] These or other aspects of this application will become more apparent in the following description of the embodiments. Attached Figure Description

[0041] Figure 1 A top view of the radio frequency front-end module provided in Embodiment 1 of this application is shown.

[0042] Figure 2 A top view of the radio frequency front-end module provided in Embodiment 1 of this application is shown.

[0043] Figure 3 A top view of the radio frequency front-end module provided in Embodiment 1 of this application is shown.

[0044] Figure 4 A partial structural cross-sectional view of the radio frequency front-end module provided in Embodiment 1 of this application is shown.

[0045] Figure 5 A top view of the radio frequency front-end module provided in Embodiment 1 of this application is shown.

[0046] Figure 6 A front view structural schematic diagram of the radio frequency front-end module provided in Embodiment 1 of this application is shown.

[0047] Figure 7 A front view structural schematic diagram of the radio frequency front-end module provided in Embodiment 1 of this application is shown.

[0048] Figure 8 A top view of the radio frequency front-end module provided in Embodiment 1 of this application is shown.

[0049] Figure 9A partial circuit schematic diagram of the radio frequency front-end module provided in Embodiment 1 of this application is shown.

[0050] Figure 10 A top view of the radio frequency front-end module provided in Embodiment 1 of this application is shown.

[0051] Figure 11 The diagram shows the connection block diagram of the power amplifier module and the interstage matching module in the RF front-end module provided in Embodiment 1 of this application.

[0052] Figure 12 A top view of the radio frequency front-end module provided in Embodiment 1 of this application is shown.

[0053] Figure 13 A top view of the radio frequency front-end module provided in Embodiment 2 of this application is shown.

[0054] Figure 14 A front view structural schematic diagram of the radio frequency front-end module provided in Embodiment 2 of this application is shown.

[0055] Figure 15 A front view structural schematic diagram of the radio frequency front-end module provided in Embodiment 2 of this application is shown.

[0056] Figure 16 A top view of the radio frequency front-end module provided in Embodiment 3 of this application is shown.

[0057] Figure 17 A front view structural schematic diagram of the radio frequency front-end module provided in Embodiment 3 of this application is shown.

[0058] Figure 18 A front view structural schematic diagram of the radio frequency front-end module provided in Embodiment 3 of this application is shown. Detailed Implementation

[0059] The embodiments of this application are described in detail below. Examples of the embodiments are shown in the accompanying drawings, wherein the same or similar reference numerals denote the same or similar elements or elements having the same or similar functions throughout. The embodiments described below with reference to the accompanying drawings are exemplary and are only used to explain this application, and should not be construed as limiting this application.

[0060] To enable those skilled in the art to better understand the solutions of this application, the technical solutions of the embodiments of this application will be clearly and completely described below with reference to the accompanying drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of them. All other embodiments obtained by those skilled in the art based on the embodiments of this application without creative effort are within the scope of protection of this application.

[0061] In the embodiments of this application, it should be noted that, in this document, relational terms such as first and second are used only to distinguish one entity or operation from another entity or operation, and do not necessarily require or imply any such actual relationship or order between these entities or operations.

[0062] Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising one..." does not exclude the presence of other identical elements in the process, method, article, or apparatus that includes said element.

[0063] In the description of the embodiments of this application, the words "example" or "for example" are used to indicate exemplification, illustration, or description. Any embodiment or design described as "example" or "for example" in the embodiments of this application is not to be construed as being more preferred or having more advantages than another embodiment or design. The use of the words "example" or "for example" is intended to present relative concepts in a clear manner.

[0064] Furthermore, in the embodiments of this application, "multiple" refers to two or more. Therefore, in the embodiments of this application, "multiple" can also be understood as "at least two". "At least one" can be understood as one or more, such as one, two, or more. For example, including at least one means including one, two, or more, and is not limited to which ones are included. For example, including at least one of A, B, and C, then it could include A, B, C, A and B, A and C, B and C, or A and B and C.

[0065] It should be noted that in the embodiments of this application, "and / or" describes the relationship between associated objects, indicating that there can be three relationships. For example, A and / or B can represent: A existing alone, A and B existing simultaneously, or B existing alone. In addition, the character " / ", unless otherwise specified, generally indicates that the associated objects before and after it are in an "or" relationship.

[0066] It should be noted that in the embodiments of this application, "connection" can be understood as electrical connection. The connection between two electrical components can be a direct or indirect connection between the two electrical components. For example, the connection between A and B can be a direct connection between A and B, or an indirect connection between A and B through one or more other electrical components.

[0067] (Example 1)

[0068] One embodiment of this application provides a radio frequency front-end module 100, including a carrier 110, an inductor 120, and a first bonding wire 130. Please refer to... Figure 1 The carrier 110 includes a first metal layer 111, and the inductor 120 includes a first inductor trace 121, which is wound around the first metal layer 111. The first bonding wire 130 is connected to any two nodes on the first inductor trace 121. The carrier 110 can be a chip or a substrate, etc.

[0069] In this embodiment, the first metal layer 111 is preferably the top metal layer of the carrier 110, that is, the first inductor trace 121 is the exposed portion of the inductor 120. The first bonding wire 130 is connected to any two nodes on the first inductor trace 121, that is, the first bonding wire 130 is connected in parallel with the first inductor trace 121, which can effectively reduce the inductance of the inductor 120. Furthermore, the parasitic resistance of the inductor 120 after parallel connection is also reduced and the Q value (quality factor) is improved, which effectively reduces the overall insertion loss. Moreover, the parallel connection of the first bonding wire 130 and the first inductor trace 121 can adjust the impedance point of the RF front-end module 100 within a certain range, so that it falls at the most matched impedance point position. Thus, the impedance point of the RF front-end module 100 can be flexibly adjusted without adding additional components and occupying area, thereby improving the RF performance of the RF front-end module 100 and reducing the iteration time.

[0070] In some implementations, the inductor 120 can be any inductor element such as a matching inductor or a power supply inductor in the RF front-end module 100.

[0071] In some implementation methods, please refer to Figure 2 As shown, in order to facilitate the connection of the first bonding wire 130, the first inductor trace 121 is provided with a first pad 141 and a second pad 142. The first end of the first bonding wire 130 is connected to the first pad 141, and the second end of the first bonding wire 130 is connected to the second pad 142.

[0072] In some implementation methods, please refer to Figure 2 As shown, the distance between the first pad 141 and the second pad 142 is 100um-500um. In this embodiment, by limiting the distance between the first pad 141 and the second pad 142 to 100um-500um, the length of the first bonding wire 130 is increased, thereby effectively reducing the inductance of the inductor 120 and the overall insertion loss.

[0073] As an example, the distance between the first pad 141 and the second pad 142 can be 100um, 142um, 200um, 300um, 350um, or 500um, etc.

[0074] It is understandable that, since the first bonding wire 130 connects between the first pad 141 and the second pad 142, the length of the first bonding wire 130 is approximately equal to the distance between the first pad 141 and the second pad 142. The greater the distance between the first pad 141 and the second pad 142, the longer the first bonding wire 130 can be, resulting in a larger equivalent inductance value and a greater reduction in the inductance of the inductor 120. Conversely, the smaller the distance between the first pad 141 and the second pad 142, the shorter the first bonding wire 130, resulting in a smaller equivalent inductance value and a smaller reduction in the inductance of the inductor 120. The distance between the first pad 141 and the second pad 142 can be set according to actual conditions, which will not be elaborated upon here.

[0075] In some implementation methods, please refer to Figure 2 As shown, the first inductor trace 121 includes multiple sides 1211, which are connected sequentially. Two connected sides 1211 form an included angle. A first pad 141 and a second pad 142 are respectively disposed on the two sides 1211 connected to the first inductor trace 121 at the same included angle. When the lengths of the parallel sections of the first inductor trace 121 and the first bonding wire 130 are the same, compared to disposing the first pad 141 and the second pad 142 on the same side 1211, disposing the first pad 141 and the second pad 142 on the two sides 1211 connected to the first inductor trace 121 at the same included angle can effectively reduce the inductance of the first inductor trace 121 and avoid the loose layout caused by excessively long bonding wires, resulting in a neater and more compact layout of the RF front-end module 100.

[0076] In one implementation, the included angle between the two connected sides 1211 can be 90°, please refer to... Figure 2 As shown. It should be noted that in other embodiments, the included angle between the two connected sides 1211 can be other angles, which can be set according to the actual situation, and will not be elaborated here.

[0077] As one implementation method, please refer to Figure 2 As shown, at least two first bonding lines 130 are connected between the two sides 1211 of the same included angle.

[0078] As an example, please refer to Figure 3The RF front-end module 100 includes a first inductor 120a, which includes a first inductor trace 121a. The first inductor trace 121a includes a first side 1211a, a second side 1211b, a third side 1211c, and a fourth side 1211d connected in sequence, with an included angle between any two connected sides 1211a. A first pad 141a is provided on the first side 1211a, a second pad 142a and a first pad 141b are provided on the second side 1211b, and a second pad 142b is provided on the third side 1211c. The RF front-end module 100 also includes a first bonding wire 130a and a first bonding wire 130b, wherein the first bonding wire 130a is connected to the first pad 141a and the second pad 142a, and the first bonding wire 130b is connected to the first pad 141b and the second pad 142b. The RF front-end module 100 also includes a second inductor 120b, which includes a first inductor trace 121b. The first inductor trace 121b includes a first side 1211e, a second side 1211f, a third side 1211g, a fourth side 1211h, and a fifth side 1211i connected in sequence, with an included angle between the two connected sides 1211. A first pad 141c is provided on the second side 1211f, a second pad 142c and a first pad 141d are provided on the third side 1211g, a second pad 142d and a first pad 141e are provided on the fourth side 1211h, and a second pad 142e is provided on the fifth side 1211i. The RF front-end module 100 also includes a first bonding line 130c, a first bonding line 130d, and a first bonding line 130e, wherein the first bonding line 130c is connected to the first pad 141c and the second pad 142c, the first bonding line 130d is connected to the first pad 141d and the second pad 142d, and the first bonding line 130e is connected to the first pad 141e and the second pad 142e.

[0079] In this example, multiple sets of first bonding wires 130 are respectively provided on the first inductor traces 121a and 121b. While controlling the length of the first bonding wires 130, the inductance of the inductor 120 can be effectively reduced. This not only makes the layout of the RF front-end module 100 more neat and compact, but also expands the adjustment range of the impedance point of the RF front-end module 100, allowing the impedance point of the RF front-end module 100 to fall at the optimal impedance point position, thereby improving the RF performance of the RF front-end module 100.

[0080] In some implementation methods, please refer to Figure 4As shown, the carrier 110 further includes a second metal layer 112. The first metal layer 111 and the second metal layer 112 are sequentially arranged along a first direction perpendicular to the carrier 110, wherein the first metal layer 111 is the top metal layer. The inductor 120 further includes a second inductor trace 122, which is wound around the second metal layer 112. The second inductor trace 122 is connected to the first inductor trace 121 through a metal via 113 between the first metal layer 111 and the second metal layer 112.

[0081] In this embodiment, in addition to the first inductor trace 121 located on the top metal layer, i.e. the first metal layer 111, the inductor 120 also includes a second inductor trace 122 located on the second metal layer 112. This can reduce the area occupied by the inductor 120 on the first metal layer 111, making it easier to arrange other components on the carrier 110, and making the layout of the RF front-end module 100 more compact.

[0082] In some implementation methods, please refer to Figure 5 As shown, the RF front-end module 100 also includes a second bonding wire 150, which is connected between the inductor 120 and the working circuit 160 disposed on the carrier 110.

[0083] In some implementation methods, please refer to Figure 5 As shown, multiple second bonding wires 150 are connected between inductor 120 and working circuit 160. In this embodiment, the second bonding wires 150 can be considered as part of inductor 120. Without changing the overall layout of RF front-end module 100, the inductance of inductor 120 can be adjusted by adjusting the number of second bonding wires 150. For example, when the inductance of inductor 120 is too small, the number of second bonding wires 150 can be reduced. For example, four second bonding wires 150 can be reduced to three or two, etc. This embodiment has a simple structure, does not require changing the overall layout of RF front-end module 100, reduces iteration time, and can adjust the impedance point of RF front-end module 100 within a certain range, so that the impedance point of RF front-end module 100 falls at the optimal impedance point position, thereby improving the RF performance of RF front-end module 100.

[0084] As an example, the number of second bonding lines 150 can be two, three, or four, etc., which can be set according to the actual situation, and will not be elaborated here.

[0085] In some implementation methods, please refer to Figure 6As shown, the second bonding wire 150 includes a first segment 151 and a second segment 152 that are connected as one piece. One end of the first segment 151 is connected to the working circuit 160, and the other end of the first segment 151 extends along the first direction and is connected to one end of the second segment 152. The other end of the second segment 152 extends at an angle relative to the first direction and is connected to the inductor 120.

[0086] In this embodiment, the second bonding wire 150 can be considered as part of the inductor 120. Without changing the overall layout of the RF front-end module 100, i.e., without changing the distance between the inductor 120 and the working circuit 160, the inductance of the inductor 120 can be adjusted by adjusting the length of the second bonding wire 150. For example, when the inductance of the inductor 120 is too small, the length of the second bonding wire 150 can be increased, that is, the height h of the first segment 151 can be increased and the length of the second segment 152 can be increased accordingly, making the winding length of the inductor 120 longer, thereby increasing the inductance of the inductor 120. This structure is simple, requires no change to the overall layout of the RF front-end module 100, reduces iteration time, and can adjust the impedance point of the RF front-end module 100 within a certain range, allowing the impedance point of the RF front-end module 100 to fall at the optimal impedance point position, thereby improving the RF performance of the RF front-end module 100. Understandably, shortening the length of the second bonding wire 150 can shorten the winding length of the inductor 120, thereby reducing the inductance of the inductor 120.

[0087] In one implementation, the height h of the first segment 151 is 2 μm to 10 μm, which not only facilitates connection with the working circuit 160, but also does not affect the packaging of the RF front-end module 100.

[0088] As an example, the height h of the first line segment 151 can be 2 mm, 3 mm, 5 mm, 6 mm, 8 mm, or 10 mm, etc.

[0089] It is understandable that the height h of the first line segment 151 can be set according to the actual situation, which will not be elaborated here.

[0090] In some implementation methods, please refer to Figure 7 As shown, the second bonding line 150 also includes a third segment 153. The first segment 151 and the second segment 152 are connected by the third segment 153, and the third segment 153 is perpendicular to the first segment 151.

[0091] In this embodiment, the second bonding wire 150 can be considered as part of the inductor 120. Without changing the overall layout of the RF front-end module 100, i.e., without changing the distance between the inductor 120 and the working circuit 160, the inductance of the inductor 120 can be adjusted by adjusting the length of the third segment 153 and correspondingly adjusting the length of the second segment 152. For example, when the inductance of the inductor 120 is too small, the length of the third segment 153 can be increased, and the length of the second segment 152 can be increased accordingly, making the winding length of the inductor 120 longer, thereby increasing the inductance of the inductor 120. This structure is simple, requires no change to the overall layout of the RF front-end module 100, reduces iteration time, and expands the adjustment range of the impedance point of the RF front-end module 100, allowing the impedance point of the RF front-end module 100 to fall at the optimal impedance point position, thus improving the RF performance of the RF front-end module 100. It is understandable that shortening the length of the third segment 153 can shorten the winding length of the inductor 120, thereby reducing the inductance value of the inductor 120.

[0092] It should be noted that in some implementations, the lengths of the first line segment 151, the second line segment 152, and the third line segment 153 can be adjusted simultaneously according to the actual situation, which will not be elaborated here.

[0093] In some implementation methods, please refer to Figure 8 As shown, the RF front-end module 100 includes at least one inductor 120, at least a portion of which is a first inductor 120a, and / or at least a portion of which is a second inductor 120b. The RF front-end module 100 also includes an output matching module 170, which includes at least one of the first inductor 120a and the second inductor 120b. Please refer to... Figure 9 As shown, the first inductor 120a is connected in series in the first connection path between the output terminal 182 and the signal output terminal 200 of the power amplifier module, one end of the second inductor 120b is connected to the first connection path, and the other end of the second inductor 120b is grounded.

[0094] In this embodiment, the output matching module 170 includes at least one of a first inductor 120a and a second inductor 120b. When the inductance value of the first inductor 120a is too large, the inductance value of the first inductor 120a can be reduced through the first bonding wire 130; when the inductance value of the second inductor 120b is too large, the inductance value of the second inductor 120b can be reduced through the first bonding wire 130. When the inductance value of the first inductor 120a is too small, the inductance value of the first inductor 120a can be increased through the second bonding wire 150a; when the inductance value of the second inductor 120b is too small, the inductance value of the second inductor 120b can be increased through the second bonding wire 150b, thereby obtaining a suitable inductance value.

[0095] In some embodiments, the carrier 110 is a substrate. Since multilayer substrates can increase the number of metal layers, thereby improving the quality factor of the metal, multilayer substrates are often used in related technologies to reduce overall insertion loss. However, using multilayer substrates increases costs. In this embodiment, providing the first bonding wire 130 improves the quality factor of the inductor 120, thereby reducing insertion loss and reducing the number of substrate layers. This not only simplifies the structure and makes design easier but also reduces production costs.

[0096] In some implementation methods, please refer to Figure 10 As shown, the RF front-end module 100 includes at least one inductor 120, at least a portion of which is a third inductor 120c. The third inductor 120c includes a first inductor trace 121c, which is wound around a first metal layer 111. First bonding wires 130f are connected to any two nodes on the first inductor trace 121c. The RF front-end module 100 also includes an RF power amplifier chip 180, which is disposed on the carrier 110 and includes a multi-stage power amplifier module 181. Please refer to [reference needed]. Figure 11 As shown, the RF front-end module 100 also includes an interstage matching module 190 connected between two adjacent power amplifier modules 181, and the interstage matching module 190 includes a third inductor 120c.

[0097] As one implementation method, please refer to Figure 12 As shown, inductor 120 may include a first inductor 120a, a second inductor 120b, and a third inductor 120c. Output matching module 170 includes the first inductor 120a and the second inductor 120b. Interstage matching module 190 includes the third inductor 120c.

[0098] (Example 2)

[0099] One embodiment of this application provides a radio frequency front-end module 300, including a substrate 310, an inductor 320, and a first chip 380. Please refer to [reference needed]. Figure 13 As shown. Inductor 320 and first chip 380 are disposed on substrate 310, and the signal transmission port of first chip 380 is connected to inductor 320 through second bonding wire 350. Please refer to... Figure 14 As shown, the second bonding wire 350 includes a first segment 351 and a second segment 352 integrally connected. One end of the first segment 351 is connected to the signal transmission port of the first chip 380, and the other end of the first segment 351 extends along a first direction and is connected to one end of the second segment 352. The other end of the second segment 352 extends at an angle relative to the first direction and is connected to the inductor 320. The first direction is perpendicular to the substrate 310.

[0100] In this embodiment, the second bonding wire 350 can be regarded as part of the inductor 320. When the inductance of the inductor 320 is too small, the inductance of the inductor 320 can be increased by increasing the length of the second bonding wire 350. Furthermore, by adjusting the length of the second bonding wire 350, the impedance point of the RF front-end module 300 can be adjusted within a certain range to make it fall at the most matched impedance point position. Thus, the impedance point of the RF front-end module 300 can be flexibly adjusted without adding additional components and occupying area, thereby improving the RF performance of the RF front-end module 300 and reducing the iteration time.

[0101] As an example, when the inductance of inductor 320 is too small, the height h of the first segment 351 can be increased and the length of the second segment 352 can be increased accordingly, making the winding length of inductor 320 longer, thereby increasing the inductance of inductor 320. This structure is simple, requires no changes to the overall layout of the RF front-end module 300, reduces iteration time, and allows adjustment of the impedance point of the RF front-end module 300 within a certain range, ensuring the impedance point falls at the optimal impedance point position, thus improving the RF performance of the RF front-end module 300. It is understandable that shortening the length of the second bonding wire 350 can shorten the winding length of inductor 320, thereby reducing the inductance of inductor 320.

[0102] In some implementation methods, please refer to Figure 13 As shown, multiple second bonding wires 350 connect the inductor 320 and the first chip 380. In this embodiment, the second bonding wires 350 can be considered as part of the inductor 320. Without changing the overall layout of the RF front-end module 300, the inductance of the inductor 320 can be adjusted by changing the number of second bonding wires 350. For example, when the inductance of the inductor 320 is too small, the number of second bonding wires 350 can be reduced. For example, four second bonding wires 350 can be reduced to three or two, etc. This embodiment has a simple structure, does not require changing the overall layout of the RF front-end module 300, reduces iteration time, and can adjust the impedance point of the RF front-end module 300 within a certain range, allowing the impedance point of the RF front-end module 300 to fall at the optimal impedance point position, thereby improving the RF performance of the RF front-end module 300.

[0103] As an example, the number of second bonding lines 350 can be two, three, or four, etc., which can be set according to the actual situation, and will not be elaborated here.

[0104] As one implementation, the height h of the first segment 351 is 2 μm to 10 μm, which not only facilitates connection with the first chip 380, but also does not affect the packaging of the RF front-end module 300.

[0105] As an example, the height h of the first line segment 351 can be 2 mm, 3 mm, 5 mm, 6 mm, 8 mm, or 10 mm, etc.

[0106] It is understandable that the height h of the first line segment 351 can be set according to the actual situation, which will not be elaborated here.

[0107] In some implementation methods, please refer to Figure 15 As shown, the second bonding line 350 also includes a third segment 353. The first segment 351 and the second segment 352 are connected by the third segment 353, and the third segment 353 is perpendicular to the first segment 351.

[0108] In this embodiment, the second bonding wire 350 can be considered as part of the inductor 320. Without changing the overall layout of the RF front-end module 300, i.e., without changing the distance between the inductor 320 and the operating circuit, the inductance of the inductor 320 can be adjusted by adjusting the length of the third segment 353 and correspondingly adjusting the length of the second segment 352. For example, when the inductance of the inductor 320 is too small, the length of the third segment 353 can be increased, and the length of the second segment 352 can be increased accordingly, making the winding length of the inductor 320 longer, thereby increasing the inductance of the inductor 320. This structure is simple, requires no change to the overall layout of the RF front-end module 300, reduces iteration time, and expands the adjustment range of the impedance point of the RF front-end module 300, allowing the impedance point of the RF front-end module 300 to fall at the optimal impedance point position, thus improving the RF performance of the RF front-end module 300. It is understood that shortening the length of the third segment 353 can shorten the winding length of the inductor 320, thereby reducing the inductance of the inductor 320.

[0109] It should be noted that in some implementations, the lengths of the first line segment 351, the second line segment 352, and the third line segment 353 can be adjusted simultaneously according to the actual situation, which will not be elaborated here.

[0110] In some implementations, the first chip 380 is an radio frequency power amplifier chip.

[0111] It should be noted that Embodiment 2 is basically the same as Embodiment 1, so the same parts will not be described again here.

[0112] (Example 3)

[0113] One embodiment of this application provides a radio frequency front-end module 400, including a substrate 410, an inductor 420, and a first component 480. The inductor 420 and the first component 480 are disposed on the substrate 410. Please refer to [reference needed]. Figure 16One end of the first component 480 is connected to the inductor 420 via the second bonding wire 450. Please refer to [reference needed]. Figure 17 The second bonding wire 450 includes a first segment 451 and a second segment 452 integrally connected. One end of the first segment 451 is connected to one end of the first component 480, and the other end of the first segment 451 extends along a first direction and is connected to one end of the second segment 452. The other end of the second segment 452 extends at an angle relative to the first direction and is connected to the inductor 420. The first direction is perpendicular to the substrate 410.

[0114] In this embodiment, the second bonding wire 450 can be regarded as part of the inductor 420. When the inductance of the inductor 420 is too small, the inductance of the inductor 420 can be increased by increasing the length of the second bonding wire 450. Furthermore, by adjusting the length of the second bonding wire 450, the impedance point of the RF front-end module 400 can be adjusted within a certain range to make it fall at the most matched impedance point position. Thus, the impedance point of the RF front-end module can be flexibly adjusted without adding additional components and occupying area, thereby improving the RF performance of the RF front-end module 400 and reducing the iteration time.

[0115] As an example, when the inductance of inductor 420 is too small, the height h of the first segment 451 can be increased and the length of the second segment 452 can be increased accordingly, making the winding length of inductor 420 longer, thereby increasing the inductance of inductor 420. This structure is simple, requires no changes to the overall layout of the RF front-end module 400, reduces iteration time, and allows adjustment of the impedance point of the RF front-end module 400 within a certain range, ensuring the impedance point falls at the optimal impedance point position, thus improving the RF performance of the RF front-end module 400. It is understandable that shortening the length of the second bonding wire 450 can shorten the winding length of inductor 420, thereby reducing the inductance of inductor 420.

[0116] In some implementation methods, please refer to Figure 16As shown, multiple second bonding wires 450 are connected between inductor 420 and the first component 480. In this embodiment, the second bonding wires 450 can be considered as part of inductor 420. Without changing the overall layout of the RF front-end module 400, the inductance of inductor 420 can be adjusted by changing the number of second bonding wires 450. For example, when the inductance of inductor 420 is too small, the number of second bonding wires 450 can be reduced. For example, four second bonding wires 450 can be reduced to three or two, etc. This embodiment has a simple structure, does not require changing the overall layout of RF front-end module 400, reduces iteration time, and can adjust the impedance point of RF front-end module 400 within a certain range, so that the impedance point of RF front-end module 400 falls at the optimal impedance point position, thereby improving the RF performance of RF front-end module 400.

[0117] As an example, the number of second bonding lines 450 can be two, three, or four, etc., which can be set according to the actual situation, and will not be elaborated here.

[0118] In one implementation, the height of the first segment 451 is 2 μm to 10 μm, which not only facilitates connection with the first component 480, but also does not affect the packaging of the RF front-end module 400.

[0119] As an example, the height of the first segment 451 can be 2 mil, 3 mil, 5 mil, 6 mil, 8 mil, or 10 mil, etc.

[0120] It is understandable that the height of the first line segment 451 can be set according to the actual situation, which will not be elaborated here.

[0121] In some implementation methods, please refer to Figure 18 As shown, the second bonding line 450 also includes a third segment 453. The first segment 451 and the second segment 452 are connected by the third segment 453, and the third segment 453 is perpendicular to the first segment 451.

[0122] In this embodiment, the second bonding wire 450 can be considered as part of the inductor 420. Without changing the overall layout of the RF front-end module 400, i.e., without changing the distance between the inductor 420 and the operating circuit, the inductance of the inductor 420 can be adjusted by adjusting the length of the third segment 453 and correspondingly adjusting the length of the second segment 452. For example, when the inductance of the inductor 420 is too small, the length of the third segment 453 can be increased, and the length of the second segment 452 can be increased accordingly, making the winding length of the inductor 420 longer, thereby increasing the inductance of the inductor 420. This structure is simple, requires no change to the overall layout of the RF front-end module 400, reduces iteration time, and expands the adjustment range of the impedance point of the RF front-end module 400, allowing the impedance point of the RF front-end module 400 to fall at the optimal impedance point position, thus improving the RF performance of the RF front-end module 400. It is understood that shortening the length of the third segment 453 can shorten the winding length of the inductor 420, thereby reducing the inductance of the inductor 420.

[0123] It should be noted that in some implementations, the lengths of the first line segment 451, the second line segment 452, and the third line segment 453 can be adjusted simultaneously according to the actual situation, which will not be elaborated here.

[0124] In some implementations, the first component 480 is a transistor.

[0125] Optionally, the transistor can be a metal-oxide-semiconductor (MOS) field-effect transistor, a bipolar junction transistor (BJT), or a heterojunction bipolar transistor (HBT).

[0126] It should be noted that Embodiment 3 is basically the same as Embodiment 1, so the same parts will not be described again here.

[0127] The above description is merely an embodiment of this application. It should be noted that those skilled in the art can make improvements without departing from the inventive concept of this application, but these improvements all fall within the protection scope of this application.

Claims

1. A radio frequency front-end module, characterized in that, include: The carrier includes a first metal layer, which is the top metal layer; An inductor, including a first inductor trace wound on the first metal layer; and The first bonding wire is connected to any two nodes on the first inductor trace. The carrier is a chip or a substrate.

2. The radio frequency front-end module as described in claim 1, characterized in that, The first inductor trace has a first pad and a second pad, the first end of the first bonding wire is connected to the first pad, and the second end of the first bonding wire is connected to the second pad.

3. The radio frequency front-end module as described in claim 2, characterized in that, The distance between the first pad and the second pad is 100um-500um.

4. The radio frequency front-end module as described in claim 2, characterized in that, The first inductor trace includes a plurality of sides connected in sequence, and there is an included angle between two connected sides. The first pad and the second pad are respectively disposed on the two sides of the first inductor trace connected to the same included angle.

5. The radio frequency front-end module as described in claim 4, characterized in that, At least two first bonding lines are connected between the two sides of the same included angle.

6. The radio frequency front-end module as described in claim 1, characterized in that, The carrier further includes a second metal layer, and the first metal layer and the second metal layer are arranged sequentially along a first direction perpendicular to the carrier; The inductor also includes a second inductor trace wound on the second metal layer, the second inductor trace being connected to the first inductor trace through a metal via between the first metal layer and the second metal layer.

7. The radio frequency front-end module as described in claim 1, characterized in that, It also includes a second bonding wire, which is connected between the inductor and the working circuit disposed on the carrier; The second bonding wire includes a first segment and a second segment connected as one piece. One end of the first segment is connected to the working circuit, and the other end of the first segment extends along a first direction perpendicular to the carrier and is connected to one end of the second segment. The other end of the second segment extends at an angle relative to the first direction and is connected to the inductor.

8. The radio frequency front-end module as described in claim 7, characterized in that, The height of the first line segment in the first direction is 2mil-10mil.

9. The radio frequency front-end module as described in claim 7, characterized in that, The second bonding wire also includes a third segment, through which the first segment and the second segment are connected as one unit, and the third segment is perpendicular to the first segment.

10. The radio frequency front-end module as described in claim 1, characterized in that, The inductor is a first inductor, and / or the inductor is a second inductor; The RF front-end module further includes an output matching module, which includes the first inductor and / or the second inductor. The first inductor is connected in series in the first connection path between the output terminal and the signal output terminal of the power amplifier module, one end of the second inductor is connected to the first connection path, and the other end of the second inductor is grounded.

11. The radio frequency front-end module as described in claim 1, characterized in that, The carrier is a substrate; The inductor is a third inductor; The radio frequency front-end module also includes a radio frequency power amplifier chip disposed on the carrier, and the radio frequency power amplifier chip includes a multi-stage power amplifier module. The radio frequency front-end module also includes an interstage matching module connected between two adjacent power amplifier modules, and the interstage matching module includes the third inductor.

12. A radio frequency front-end module, characterized in that, include: A substrate, and an inductor and a first chip disposed on the substrate; The signal transmission port of the first chip is connected to the inductor via a second bonding wire; The second bonding wire includes a first segment and a second segment that are integrally connected. One end of the first segment is connected to the signal transmission port of the first chip, and the other end of the first segment extends along a first direction and is connected to one end of the second segment. The other end of the second segment extends at an angle relative to the first direction and is connected to the inductor. The first direction is perpendicular to the substrate.

13. The radio frequency front-end module as described in claim 12, characterized in that, The height of the first line segment in the first direction is 2mil-10mil.

14. The radio frequency front-end module as described in claim 12, characterized in that, The second bonding wire also includes a third segment, through which the first segment and the second segment are connected as one unit, and the third segment is perpendicular to the first segment.

15. The radio frequency front-end module as described in claim 12, characterized in that, The first chip is an radio frequency power amplifier chip.

16. A radio frequency front-end module, characterized in that, include: A substrate, and an inductor and a first component disposed on the substrate; One end of the first component is connected to the inductor via a second bonding wire; The second bonding wire includes a first segment and a second segment that are integrally connected. One end of the first segment is connected to one end of the first component. The other end of the first segment extends along a first direction and is connected to one end of the second segment. The other end of the second segment extends at an angle relative to the first direction and is connected to the inductor. The first direction is perpendicular to the substrate.

17. The radio frequency front-end module as described in claim 16, characterized in that, The height of the first line segment in the first direction is 2mil-10mil.

18. The radio frequency front-end module as described in claim 16, characterized in that, The second bonding wire also includes a third segment, through which the first segment and the second segment are connected as one unit, and the third segment is perpendicular to the first segment.

19. The radio frequency front-end module as described in claim 16, characterized in that, The first component is a transistor.

Images