Ultra-flexible artificial synaptic device with wide spectrum sensing and preparation method thereof

Abstract

The invention relates to a broadband spectrum sensing super-flexible artificial synaptic device and a preparation method thereof. The device comprises a substrate, a semiconductor layer and an electrode layer from bottom to top, and the semiconductor layer is a bulk heterojunction generated by polydithiophene diketopyrrolopyrrole-thiophene and poly (2, 7-bis (2-octyldodecyl) benzo [LMN] [3, 8] phenanthrene-1, 3, 6, 8 (2H, 7H)-tetraketone-4, 9-diyl) ([2, 2 '] dithienyl-5, 5'-diyl), and the semiconductor layer is a bulk heterojunction generated by poly (2, 7-bis (2-octyldodecyl) benzo [LMN] [3, 8] phenanthrene-1, 3, 6, 8 (2H, 7H)-tetraketone-4, 9-diyl) ([2, 2 '] dithienyl-5, 5'-diyl). Compared with a device of the same wide spectrum sensing type, the method has the advantages that the process is simplified and improved, and a thin film formed by the material also has the characteristic of super flexibility in microstructure, so that a solid device support is provided for enhancing device design and material selection in the field of visual perception and neuromorphic calculation.

Description

Technical Field

[0001] The invention belongs to the field of microelectronics and materials, and specifically is a method for preparing an ultra-flexible artificial synaptic device with wide spectrum perception. Background Art

[0002] Under complex and changing conditions, the human brain can easily identify many objects with extremely low energy consumption, excellent computing efficiency and efficient fault-tolerant correction capabilities. Its cognitive tasks are inseparable from the visual perception system based on the retina. Due to the limitations of retinal cell development, the human perception system cannot capture certain light information emitted by nature, because the wavelength range of human visible light is approximately between 400 and 700nm. Under special conditions such as darkness or loss of visual perception, information reception will be impaired. Realizing wide-spectrum perception can simultaneously obtain information from multiple bands, thereby providing richer and more comprehensive data, which has a relatively important application prospect for improving the accuracy of the perception system.

[0003] Of course, the signal processing system is indispensable in this process. In the visual perception system, this efficient parallel processing capability is mainly due to the complex network formed by the interconnection of neurons in the human brain through synapses. Synapses, as a bridge connecting the previous and next neurons, have a connection strength, i.e., synaptic weight, which can be measured by parameters such as Ca. 2+ 、Na + and K + The ability to precisely adjust the concentration of multiple ions such as ions is called synaptic plasticity. Synaptic plasticity provides a key foundation for the brain to perform functions such as cognition and learning. Therefore, the development of artificial synaptic devices that simulate the function of neural synapses is essential for building the hardware of neuromorphic computing systems and ultimately replacing the traditional von Neumann computing architecture.

[0004] In the article titled Multi-factor modulated organic bulk heterojunction synaptic transistors achieved through ligand engineering for computing in centrosymmetric sensors (the first author is Enlong Li, DOI: 10.1002 / adfm.202314980, journal number: 1616-301X), it is also a heterojunction rigid synaptic transistor device. At the material level, it is a perovskite quantum dot (QDs) bulk heterojunction synaptic transistor (QBST). Its characteristic is that it combines multi-factor modulation of optical, electrical and chemical signals to achieve the effects of optical synaptic response and spectral broadening (365-900nm); but due to the poor flexibility of the perovskite material itself and the fact that it is often used in rigid materials, this technology has mechanical performance limitations such as inability to bend.

[0005] Under current development, the realization of artificial synaptic devices with ultra-flexible and wide-spectrum sensing is still an important step towards realizing wearable sensing systems. Organic semiconductors are considered to be the most promising candidate materials for realizing ultra-flexible optoelectronic synaptic devices because they have unique advantages, including inherent mechanical flexibility, low-temperature preparation, solution processability, and adaptability to flexible substrates. However, since the exciton binding energy of organic semiconductors is usually higher than that of inorganic semiconductors (0.3-1eV), this severely limits the dissociation efficiency of photogenerated excitons, resulting in poor photosensitivity of organic near-infrared PTS.

[0006] The present invention conducts research on ultra-flexible artificial synaptic devices based on wide-spectrum perception, providing effective guidance for device design and material selection in the field of enhanced visual perception and neuromorphic computing. Summary of the invention

[0007] In order to make up for the deficiencies of existing wearable and visual perception system technologies, the present invention proposes an ultra-flexible artificial synaptic device with wide-spectrum perception and a preparation method thereof. The device uses the formed bulk heterojunction as a semiconductor layer with wide-spectrum perception, and realizes the fusion of characteristic spectra. In the preparation, two organic semiconductor solutions with different characteristic spectra are blended, spin-coated and annealed. Compared with devices of the same wide-spectrum perception type, the present invention simplifies and improves the process. Similarly, the thin film formed by such materials also ensures the ultra-flexible characteristics in the microstructure. It provides solid device support for device design and material selection in the field of enhanced visual perception and neuromorphic computing.

[0008] The technical solution of the present invention is as follows:

[0009] An ultra-flexible artificial synaptic device with wide spectrum sensing, the device comprises from bottom to top: a substrate, a semiconductor layer and an electrode layer;

[0010] The substrate is polyethylene naphthalate (PEN) or polyurethane (PI);

[0011] The semiconductor layer is a bulk heterojunction formed by polydithiophene pyrrolopyrrole diketo-thiophene and poly (2,7-bis (2-octyldodecyl) benzo [LMN] [3,8] o-phenanthroline-1,3,6,8 (2H,7H)-tetraketone-4,9-diyl) ([2,2'] dithiophene-5,5'-diyl); the mass ratio of the two is 1:0.3-3; the thickness is 40-70nm;

[0012] The electrode layer is a source electrode and a drain electrode, with a thickness of 30 to 90 nm; the material is gold, silver or copper;

[0013] The method for preparing the ultra-flexible artificial synaptic device with wide spectrum sensing comprises the following specific steps:

[0014] (1) The substrate was ultrasonically cleaned with deionized water and isopropanol for 20-60 minutes respectively, and then its surface was blown dry with nitrogen;

[0015] (2) mixing a poly(2,7-bis(2-octyldodecyl)benzo[LMN][3,8]phenanthroline-1,3,6,8(2H,7H)-tetraketone-4,9-diyl)([2,2']dithienyl-5,5'-diyl) solution, and stirring at 40 to 70° C. for 1 to 12 hours to prepare a precursor solution;

[0016] Wherein, the mass ratio of polydithiophene pyrrolopyrrole diketo-thiophene solution: poly(2,7-bis(2-octyldodecyl)benzo[LMN][3,8]phenanthroline-1,3,6,8(2H,7H)-tetraketone-4,9-diyl)([2,2']dithiophene-5,5'-diyl) solution=1:0.3-3;

[0017] The solvents of the polydithiophene pyrrolopyrrole diketo-thiophene solution and the poly(2,7-bis(2-octyldodecyl)benzo[LMN][3,8]phenanthroline-1,3,6,8(2H,7H)-tetraketone-4,9-diyl)([2,2']dithienyl-5,5'-diyl) solution are both chloroform; the mass ratio of polydithiophene pyrrolopyrrole diketo-thiophene: chloroform = 1: 100-400, poly(2,7-bis(2-octyldodecyl)benzo[LMN][3,8]phenanthroline-1,3,6,8(2H,7H)-tetraketone-4,9-diyl)([2,2']dithienyl-5,5'-diyl): chloroform = 1: 100-500;

[0018] (3) using a vacuum adsorption spin coater to spin coat the precursor solution prepared in step (2) to obtain a semiconductor layer;

[0019] (4) annealing the device after spin coating in step (3) in nitrogen at 80 to 180° C. for 30 to 240 min to obtain an ultra-flexible semiconductor layer with wide spectrum sensing;

[0020] (5) using a mask plate, evaporating gold electrodes on the surface of the organic device obtained in step (4) as source and drain electrodes, thereby preparing an ultra-flexible artificial synaptic device with wide spectrum perception;

[0021] When the vacuum adsorption spin coater is used for spin coating in step (3), the rotation speed is set to 500-6000 rpm, the solution temperature is 30-90°C during spin coating, and the spin coating time is set to 10-240 seconds.

[0022] The thickness of the ultra-flexible artificial synapse semiconductor layer obtained in step (4) is 40 to 70 nm.

[0023] In step (5), a mask is used to evaporate 60 to 200 nm gold electrodes on the surface of the ultra-flexible artificial synaptic device as source and drain electrodes. The gold electrodes can be replaced with silver, aluminum, titanium / gold and other metals.

[0024] The beneficial effects of the present invention are:

[0025] The present invention uses spin coating to prepare an ultra-flexible artificial synaptic device. A vacuum adsorption spin coater is used to directly spin coat a semiconductor device with wide spectrum perception on an ultra-thin substrate. The method has simple process, easy operation, low cost, and is suitable for large-scale production. The prepared synaptic device can simulate synaptic plasticity under fixed wavelength light and has good photoelectric properties, such as on-off ratio, excitatory postsynaptic current (EPSC), double pulse facilitation (PPF), pulse voltage-dependent plasticity (SVDP), pulse number-dependent plasticity (SNDP), pulse frequency-dependent plasticity (SFDP), photosensitivity (P), multi-band light response, etc.; at the same time, it can also achieve good mechanical properties, such as more than 10,000 bending cycles, and an extremely small bending radius of 0.85 mm. The present invention obtains an ultra-flexible artificial synaptic device with stable chemical properties and good photoelectric properties by reasonably controlling parameters such as precursor concentration, solute ratio, spin coating parameters, and annealing conditions, thereby preparing an artificial synaptic device with wide spectrum perception, which provides effective guidance for device design and material selection in the field of enhanced visual perception and neuromorphic computing. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] Figure 1 is a schematic structural diagram of the ultra-flexible artificial synapse device of the present invention;

[0027] Figure 2 is a physical picture of the ultra-flexible artificial synapse device in Example 1;

[0028] Figure 3 is the on / off ratio of the ultra-flexible artificial synaptic device based on wide spectrum sensing in Example 1;

[0029] Figure 4 is the excitatory postsynaptic current (EPSC) of the ultra-flexible artificial synaptic device based on wide spectrum perception in Example 1;

[0030] Figure 5 It is the double pulse facilitation (PPF) of the ultra-flexible artificial synaptic device based on wide spectrum sensing in Example 1;

[0031] Figure 6 It is the pulse frequency dependent plasticity (SRDP) of the ultra-flexible artificial synaptic device based on wide spectrum perception in Example 1;

[0032] Figure 7 It is the pulse number dependent plasticity (SNDP) of the ultra-flexible artificial synaptic device based on wide spectrum perception in Example 1;

[0033] Figure 8 It is the multi-band light response of the ultra-flexible artificial synaptic device based on wide spectrum perception in Example 1;

[0034] Fig. 9 is a schematic diagram of a bending test of the ultra-flexible artificial synaptic device based on wide spectrum sensing in Example 1;

[0035] Fig.10 is a performance comparison of different bending cycles of the ultra-flexible artificial synaptic device based on wide spectrum sensing in Example 1;

[0036] The present invention will be further described below with reference to the accompanying drawings and embodiments, but is not limited thereto. DETAILED DESCRIPTION

[0037] Example 1

[0038] (1) A polyethylene naphthalate (PEN) substrate with a size of 2.0 cm*2.0 cm and a thickness of 0.125 mm was ultrasonically cleaned with deionized water and isopropanol for 20 minutes respectively, and then its surface was blown dry with nitrogen gas;

[0039] (2) using chloroform solution as solvent, dissolving poly(dithiophene pyrrolopyrrole diketo-thiophene) and poly(2,7-bis(2-octyldodecyl)benzo[LMN][3,8]phenanthroline-1,3,6,8(2H,7H)-tetraketone-4,9-diyl)([2,2']dithienyl-5,5'-diyl), respectively, wherein both are prepared in a mass ratio of solute:solvent=1:200, stirring at 55°C using a magnetic stirrer for 4 hours, and then mixing the two solutions in a mass ratio of 3:2, and stirring at 50°C using a magnetic stirrer for 12 hours to prepare a precursor solution;

[0040] (3) using a vacuum adsorption spin coater, spinning at 3000 rpm at room temperature for 40 seconds, using a pipette gun to drop the precursor solution prepared in step (2) onto the PEN substrate of step (1), and spin coating the semiconductor device;

[0041] (4) annealing the device after spin coating in step (3) at 150° C. in nitrogen for 1 hour, and taking it out after cooling to room temperature to obtain an ultra-flexible semiconductor layer with wide spectrum sensing and a thickness of 66 nm;

[0042] (5) using a mask, evaporating 70 nm gold electrodes on the surface of the organic device obtained in step (4) as source and drain electrodes, wherein the distance between the two electrodes is 100 μm, thereby preparing an ultra-flexible artificial synaptic device with wide spectrum perception;

[0043] (6) Using a semiconductor analyzer and LED lamp beads connected with a wavelength of 405 nm, the optical performance of the ultra-flexible artificial synaptic device with wide spectrum perception in step (5) is tested. By adjusting the pulse voltage of the input lamp beads and changing the wavelength of the irradiated light of the lamp beads, the device can simulate the neural synapse.

[0044] By optimizing the experimental parameters, an ultra-flexible artificial synaptic device based on wide spectrum sensing was successfully prepared. A semiconductor characterization system (Keithley 4200A) and UV LED were used as light sources to collect photoelectric synaptic properties. The light intensity was measured using a NOVAII power meter (OPHIR photonics), and all measurements were performed at room temperature. The test method is that under the stimulation of a neural-like electrical pulse signal, the device can simulate and regulate biological synaptic plasticity, such as excitatory postsynaptic current (EPSC), paired-pulse facilitation (PPF), spike-number dependent plasticity (SNDP), spike-frequency dependent plasticity (SFDP), spike-voltage dependent plasticity (SVDP), and spike-duration dependent plasticity (SDDP), which are all common test standards and reference bases for artificial synaptic devices.

[0045] Figure 1 It is a schematic diagram of the structure of the ultra-flexible artificial synaptic device in the present invention. An organic device with wide spectrum sensing is prepared by vacuum spin coating using a spin coater, and finally gold electrodes are evaporated on the device after high-temperature annealing as the source and drain of the device.

[0046] Figure 2 A real picture of the ultra-flexible artificial synaptic device in Implementation 1 is shown.

[0047] Figure 3The ratio change of dark current to voltage of the ultra-flexible artificial synaptic device based on wide spectrum sensing in Example 1 when the drain voltage is -0.1V is compared, and then the ratio change trend of current to voltage after 405nm light irradiation is compared. After the light source is turned off and the device is left to stand for 15 seconds, the ratio change of dark current to voltage after irradiation is compared again when the drain voltage is -0.1V.

[0048] Figure 4 The ultra-flexible artificial synaptic device based on wide spectrum perception in Example 1 is illuminated by a 405nm LED light with a gate voltage of 5V (light intensity of 7.8mw / cm 2 ), excitatory postsynaptic current (EPSC) when the drain voltage is -0.1V. It can be seen that the device can measure EPSC when a certain pre-pulse stimulus is applied;

[0049] Figure 5 The ultra-flexible artificial synaptic device based on wide spectrum sensing in Example 1 is stimulated by a 405nm LED light driven with a gate voltage of 5V and irradiated above the device, and the drain voltage is -0.1V. The duration of a single pulse is fixed at 50ms, and the time interval between two stimuli is 100ms. When the second stimulus is applied, the subsequent current is significantly stronger than the current generated by the first stimulus.

[0050] Figure 6 It is the pulse frequency dependent plasticity (SRDP) of the ultra-flexible artificial synaptic device based on wide spectrum perception in Example 1. The duration of a single light pulse is fixed at 50ms, and the frequency amplitude of the light pulse is gradually increased (1). It can be seen that EPSC gradually increases with the increase of the pulse frequency amplitude; Figure 7 The pulse number-dependent plasticity (SNDP) of the ultra-flexible artificial synaptic device based on wide-spectrum sensing in Example 1 is fixed at a single pulse duration (50 ms), pulse interval (50 ms) and gate voltage of 5 V, and a 405 nm LED light is driven to illuminate the top of the device (light intensity is 7.8 mw / cm 2 ), changing the number of pulses in each group (gradually increasing from 1 to 30), it can be seen that EPSC gradually increases with the increase in the number of pulses; the above data all illustrate that the ultra-flexible artificial synapse device prepared by the present invention can simulate the function of biological synapses.

[0051] Figure 8 The multi-band light response of the ultra-flexible artificial synaptic device based on wide spectrum perception in Example 1 is shown in Figure 1. When the duration of a single pulse (50 ms), the pulse interval (50 ms) and the gate voltage are kept fixed, the LED lights (365, 405, 520, 620, 810 nm) are irradiated onto the device (the light intensity is 5 mw / cm2 ), changing the number of pulses in each group (gradually increasing from 1 to 30), it can be seen that EPSC gradually increases with the increase in the number of pulses, and the growth trend and response current under 405nm and 810nm light irradiation are more obvious; the above data all illustrate that the ultra-flexible artificial synaptic device prepared by the present invention can achieve wide-spectrum perception.

[0052] Fig. 9 is a schematic diagram of a bending test of the ultra-flexible artificial synaptic device based on wide spectrum sensing in Example 1, in which a bending test is performed with a certain bending radius and the device can be restored to an initial state;

[0053] Fig.10 The performance comparison of different bending cycles of the ultra-flexible artificial synaptic device based on wide spectrum perception in Example 1 is as follows. After the bending test is completed, the duration of a single pulse (50ms), the pulse interval (50ms) and the gate voltage are fixed to 5V, and a 405nm LED light is driven to irradiate the top of the device (the light intensity is 7.8mw / cm 2 ), with the number of pulses fixed at 30, the performance comparison of different bending cycles can be seen; the above data all illustrate that the artificial synaptic device with wide spectrum perception prepared by the present invention can achieve ultra-flexibility and good mechanical properties.

[0054] Table 1 compares the optical and mechanical properties of the latest artificial synapses with wide spectrum sensing;

[0055]

[0056] Compared with the latest artificial synaptic device with wide spectrum perception (Reference 1, He Shao, DOI:10.1002 / adfm.202316381, Journal Number: 1616-301X), the results in Table 1 highlight that this work has good flexibility characteristics with a wide spectrum perception of 280-900nm and a small bending radius of 0.85mm. It has been innovated and improved in two aspects, laying a solid foundation for the subsequent wearable neuromorphic system.

[0057] Example 2

[0058] (1) A polyethylene naphthalate (PEN) substrate was ultrasonically cleaned with deionized water and isopropyl alcohol for 20 minutes, respectively, and then its surface was blown dry with nitrogen gas;

[0059] (2) using chloroform solution as a solvent, dissolving polydithiophene pyrrolopyrrole diketo-thiophene and poly(2,7-bis(2-octyldodecyl)benzo[LMN][3,8]phenanthroline-1,3,6,8(2H,7H)-tetraketone-4,9-diyl)([2,2']dithienyl-5,5'-diyl) respectively, wherein the solute:solution is prepared at a mass ratio of 1:200, stirring at 35° C. using a magnetic stirrer for 4 hours, and then mixing the two solutions at a mass ratio of 2:3, and stirring at 60° C. using a magnetic stirrer for 12 hours to prepare a precursor solution;

[0060] (3) using a vacuum adsorption spin coater, spinning at 5000 rpm for 40 seconds, using a pipette gun to drop the precursor solution prepared in step (2) onto the PEN substrate of step (1), and spin coating the semiconductor device;

[0061] (4) annealing the device after spin coating in step (3) at 150° C. in nitrogen for 0.5 hours, and taking it out after cooling to room temperature;

[0062] (5) using a mask, evaporating 55 nm titanium / gold electrodes on the surface of the organic device obtained in step (4) as source and drain electrodes, thereby preparing an ultra-flexible artificial synaptic device with wide spectrum perception;

[0063] (6) Using a semiconductor analyzer and LED lamp beads connected with a wavelength of 810 nm, the optical performance of the ultra-flexible artificial synaptic device with wide spectrum perception in step (5) is tested. By adjusting the pulse voltage of the input lamp beads and changing the wavelength of the irradiated light of the lamp beads, the device can simulate the neural synapse.

[0064] Example 3

[0065] (1) The polyurethane (PI) substrate was ultrasonically cleaned with deionized water and isopropanol for 20 minutes respectively, and then its surface was blown dry with nitrogen gas;

[0066] (2) using chloroform solution as a solvent, dissolving poly(dithiophene pyrrolopyrrole diketo-thiophene) and poly(2,7-bis(2-octyldodecyl)benzo[LMN][3,8]phenanthroline-1,3,6,8(2H,7H)-tetraketone-4,9-diyl)([2,2']dithienyl-5,5'-diyl) respectively, wherein the solute:solution is prepared at a mass ratio of 1:200, stirring at 35° C. using a magnetic stirrer for 4 hours, and then mixing the two solutions at a mass ratio of 1:1, and stirring at 40° C. using a magnetic stirrer for 15 hours to prepare a precursor solution;

[0067] (3) using a vacuum adsorption spin coater, spin coating at 6000 rpm for 20 seconds, using a pipette gun to drop the precursor solution prepared in step (2) onto the PI substrate of step (1), and spin coating to form a semiconductor device;

[0068] (4) annealing the device after spin coating in step (3) at 120° C. in nitrogen for 2 hours, and taking it out after it cools to room temperature;

[0069] (5) using a mask, evaporating 100 nm titanium / gold electrodes on the surface of the organic device obtained in step (4) as source and drain electrodes, thereby preparing an ultra-flexible artificial synaptic device with wide spectrum perception;

[0070] (6) Using a semiconductor analyzer and LED lamp beads connected with a wavelength of 405 nm, the optical performance of the ultra-flexible artificial synaptic device with wide spectrum perception in step (5) is tested. By adjusting the pulse voltage of the input lamp beads and changing the wavelength of the irradiated light of the lamp beads, the device can simulate the neural synapse.

[0071] Matters not covered by the present invention are known technologies.

Claims

1. An ultra-flexible artificial synaptic device with wide spectrum sensing, characterized by The device is composed of, from bottom to top, a substrate, a semiconductor layer and an electrode layer; The semiconductor layer is a bulk heterojunction formed by polydithiophene pyrrolopyrrole diketo-thiophene and poly (2,7-bis (2-octyldodecyl) benzo [LMN] [3,8] o-phenanthroline-1,3,6,8 (2H,7H)-tetraketone-4,9-diyl) ([2,2'] dithiophene-5,5'-diyl); the mass ratio of the two is 1:0.3-3; Thickness: 40~70nm .

2. The ultra-flexible artificial synaptic device with wide spectrum sensing as claimed in claim 1, characterized in that the substrate is polyethylene naphthalate (PEN) or polyurethane (PI); The electrode layer is a source electrode and a drain electrode, with a thickness of 30 to 90 nm; the material is gold, silver or copper.

3. The method for preparing the ultra-flexible artificial synaptic device with wide spectrum perception as claimed in claim 1, characterized in that The steps include: (1) The substrate was ultrasonically cleaned with deionized water and isopropanol for 20-60 minutes respectively, and then its surface was blown dry with nitrogen; (2) mixing a poly(2,7-bis(2-octyldodecyl)benzo[LMN][3,8]phenanthroline-1,3,6,8(2H,7H)-tetraketone-4,9-diyl)([2,2']dithienyl-5,5'-diyl) solution, and stirring at 40 to 70° C. for 1 to 12 hours to prepare a precursor solution; Wherein, the mass ratio of polydithiophene pyrrolopyrrole diketo-thiophene solution: poly(2,7-bis(2-octyldodecyl)benzo[LMN][3,8]phenanthroline-1,3,6,8(2H,7H)-tetraketone-4,9-diyl)([2,2']dithiophene-5,5'-diyl) solution=1:0.3-3; The solvents of the polydithiophene pyrrolopyrrole diketo-thiophene solution and the poly(2,7-bis(2-octyldodecyl)benzo[LMN][3,8]phenanthroline-1,3,6,8(2H,7H)-tetraketone-4,9-diyl)([2,2']dithienyl-5,5'-diyl) solution are both chloroform; the mass ratio of polydithiophene pyrrolopyrrole diketo-thiophene: chloroform = 1: 100-400, poly(2,7-bis(2-octyldodecyl)benzo[LMN][3,8]phenanthroline-1,3,6,8(2H,7H)-tetraketone-4,9-diyl)([2,2']dithienyl-5,5'-diyl): chloroform = 1: 100-500; (3) using a vacuum adsorption spin coater to spin coat the precursor solution prepared in step (2) to obtain a semiconductor layer; (4) annealing the device after spin coating in step (3) in nitrogen at 80 to 180° C. for 30 to 240 min to obtain an ultra-flexible semiconductor layer with wide spectrum sensing; (5) Using a mask, the surface of the organic device obtained in step (4) is evaporated with electrodes as source and drain, thereby preparing an ultra-flexible artificial synaptic device with wide spectrum perception.

4. The method for preparing the ultra-flexible artificial synaptic device with wide spectrum perception as claimed in claim 3, characterized in that When the vacuum adsorption spin coater is used for spin coating in step (3), the rotation speed is set to 500-6000 rpm, the solution temperature is 30-90° C. during spin coating, and the spin coating time is set to 10-240 seconds.

5. The method for preparing the ultra-flexible artificial synaptic device with wide spectrum perception as claimed in claim 3, characterized in that The semiconductor layer thickness of the ultra-flexible artificial synaptic device obtained in step (4) is 40-70nm.

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