Doped perovskite solar cell structure, preparation method and cell

Abstract

The invention discloses a doped perovskite solar cell structure, a preparation method and a cell, the doped perovskite solar cell structure comprises a conductive glass layer, a permeable layer, a power generation layer, a self-diffusion electron transport layer, a conductive layer and a metal electrode layer which are sequentially arranged from bottom to top, and a PEAI-F4TCNQ film layer is diffused into a perovskite film layer to form P-type doping. According to the invention, an extra hole is introduced into the perovskite film layer, so that the concentration and mobility of the hole are improved, the conductivity of the perovskite film layer is enhanced, and the migration capability of carriers is enhanced. NDP is added in the preparation process of a perovskite solution, and the NDP is ensured to spontaneously migrate to the surface of an indium tin oxide electrode in the co-deposition process of a single solution by utilizing the strong interaction between the NDP and the indium tin oxide electrode and the large molecular size of the NDP, so that a self-diffusion electron transport layer is formed, and the manufacturing process of the perovskite cell is simplified.

Description

Technical Field

[0001] The present invention relates to the technical field of photovoltaic cells, and in particular to a doped perovskite solar cell structure, a preparation method and a cell. Background Art

[0002] With the continuous development of solar cells, perovskite solar cells have attracted much attention internationally due to their outstanding advantages such as low cost, easy preparation and excellent photoelectric properties. Perovskite is also considered to be the next generation of low-cost and high-efficiency photovoltaic materials with the most application prospects.

[0003] At present, most high-efficiency perovskite solar cells are processed from solutions into a layer-by-layer stacking structure, in which the perovskite light-absorbing layer is sandwiched between the electron transfer layer (ETL) and the hole transport layer (HTL). This multilayer structure requires a sophisticated ingredient formulation and intensive annealing treatment, which adds a lot of cost to the production process. At the same time, the widespread use of orthogonal solvents and the high thickness sensitivity of each intermediate layer of the battery also pose great challenges to the scalable preparation of perovskite solar cells.

[0004] It can be seen that how to simplify the manufacturing process of multilayer perovskite solar cells has become a technical problem that needs to be urgently solved by those skilled in the art. Summary of the invention

[0005] The present invention provides a doped perovskite solar cell structure, a preparation method and a cell to simplify the manufacturing process of a multilayer perovskite solar cell.

[0006] In order to solve the above technical problems, an embodiment of the present invention provides a doped perovskite solar cell structure, including a conductive glass layer, a permeation layer, a power generation layer, a self-diffusion electron transport layer, a conductive layer and a metal electrode layer arranged in sequence from bottom to top.

[0007] The conductive glass layer is disposed on one side of the first power generation layer, and the second power generation layer is disposed on the side of the first power generation layer away from the conductive glass layer.

[0008] One side of the electron transport layer is the second power generation layer, and the conductive layer is disposed on the side of the electron transport layer away from the second power generation layer.

[0009] The metal electrode layer is disposed on a side of the conductive layer away from the electron transport layer.

[0010] The penetration layer is a p-type doped structure prepared by diffusing phenethylammonium iodide-tetrafluorotetracyanoquinoline dimethane into a perovskite solution.

[0011] Furthermore, the thickness of the permeation layer is 300-500 nm.

[0012] Furthermore, the power generation layer is composed of Cs 0.05 FA 0.67 MA 0.33 PbB 1.31 I 1.69 Prepared

[0013] Furthermore, the self-diffusion electron transport layer is formed by the upward migration of NDP in the power generation layer.

[0014] Furthermore, the thickness of the power generation layer is 300-500 nm.

[0015] Furthermore, the thickness of the conductive layer is 150-200 nm.

[0016] Another embodiment of the present invention provides a method for preparing a doped perovskite solar cell, comprising:

[0017] A permeation layer is prepared on the conductive glass layer by a slot coating method.

[0018] A layer of perovskite solution containing NDP is coated on the permeation layer to form a power generation layer and a self-diffusion electron transport layer.

[0019] A layer of indium tin oxide is deposited on the self-diffusion electron transport layer by magnetron sputtering as a conductive layer.

[0020] A copper layer is deposited on the conductive layer by screen printing as a metal electrode layer.

[0021] Furthermore, the method of preparing a permeation layer on the conductive glass layer by a slit coating method comprises:

[0022] A phenethylammonium iodide-tetrafluorotetracyanoquinoline dimethane film layer is prepared by coating on the conductive glass layer using a slit coating method.

[0023] A layer of Cs was deposited on the phenethylammonium iodide-tetrafluorotetracyanoquinoline dimethane film layer by a slit coating method. 0.05 FA 0.67 MA 0.33 PbB 1.31 I 1.69 Perovskite film.

[0024] The phenethylammonium iodide-tetrafluorotetracyanoquinolinodimethane film layer and the Cs 0.05 FA 0.67 MA 0.33 PbB 1.31 I 1.69 The perovskite film layer is heat treated to diffuse the phenethylammonium iodide-tetrafluorotetracyanoquinoline dimethane film layer into the Cs 0.05 FA 0.67MA 0.33 PbB 1.31 I 1.69 A permeation layer is formed in the perovskite film layer.

[0025] Furthermore, coating a layer of perovskite solution containing NDP on the permeation layer to form a power generation layer and a self-diffusion electron transport layer comprises:

[0026] To a solution of N,N-dimethylformamide and dimethyl sulfoxide in a volume ratio of 2:1, FAI / MAI / PbI2 / SnI2 in a molar ratio of 0.7:0.3:0.5:0.5 was added to obtain a first precursor solution.

[0027] Tin difluoride and NDP were added to the first precursor solution, and the mixture was stirred at room temperature for 2 hours. Tin powder and aminosulfonic acid were added, and the mixture was filtered using 0.22 um polytetrafluoroethylene to obtain a second precursor solution.

[0028] The filtered second precursor solution is coated on the permeation layer by using a slot coating method to form the power generation layer, wherein the NDP component can form the self-diffusion electron transport layer.

[0029] Another embodiment of the present invention provides a doped perovskite solar cell, comprising the above-mentioned doped perovskite solar cell structure.

[0030] Compared with the prior art, the embodiments of the present invention have the following advantages:

[0031] (1) By diffusing the PEAI-F4TCNQ film into Cs 0.05 FA 0.67 MA 0.33 PbB 1.31 I 1.69 P-type doping is formed in the perovskite film layer, and additional holes are introduced into the perovskite film layer, thereby increasing the concentration and mobility of holes, enhancing the electrical conductivity of the perovskite film layer, and enhancing the mobility of carriers.

[0032] (2) NDP is added during the preparation of the perovskite solution. Its strong interaction with the indium tin oxide (ITO) electrode and its large molecular size ensure that it spontaneously migrates to the ITO surface during the co-deposition of a single solution to form a self-diffusing electron transport layer, thus simplifying the manufacturing process of the perovskite cell. BRIEF DESCRIPTION OF THE DRAWINGS

[0033] Figure 1 A schematic structural diagram of a doped perovskite solar cell structure provided by the present invention;

[0034] Figure 2A schematic structural diagram of a doped perovskite solar cell structure provided by one embodiment of the present invention;

[0035] Figure 3 A schematic diagram of the structural formula of the NDP component in a doped perovskite solar cell structure provided by the present invention;

[0036] Reference numerals:

[0037] Among them, 1. Conductive glass layer; 2. Permeation layer; 3. Power generation layer; 4. Self-diffusion electron transport layer; 5. Conductive layer; 6. Metal electrode layer. DETAILED DESCRIPTION

[0038] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. The purpose of providing these embodiments is to make the disclosure of the present invention more thorough and comprehensive. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0039] In the description of this application, the terms "first", "second", "third", etc. are used for descriptive purposes only and are not to be understood as indicating or implying relative importance or implicitly indicating the number of the indicated technical features. Thus, a feature defined as "first", "second", "third", etc. may explicitly or implicitly include one or more of the feature. In the description of this application, unless otherwise specified, "plurality" means two or more.

[0040] In the description of the present application, it should be noted that, unless otherwise clearly specified and limited, the terms "installed", "connected", and "connected" should be understood in a broad sense. For example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or it can be indirectly connected through an intermediate medium, or it can be a connection between the two elements. The terms "vertical", "horizontal", "left", "right", "upper", "lower" and similar expressions used herein are only for illustrative purposes, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on the present invention. The term "and / or" used herein includes any and all combinations of one or more related listed items. For those of ordinary skill in the art, the specific meanings of the above terms in this application can be understood according to specific circumstances.

[0041] In the description of this application, it should be noted that, unless otherwise defined, all technical and scientific terms used in the present invention have the same meaning as those commonly understood by those skilled in the art. The terms used in the specification of the present invention are only for the purpose of describing specific embodiments and are not intended to limit the present invention. For those of ordinary skill in the art, the specific meanings of the above terms in this application can be understood by specific circumstances.

[0042] An embodiment of the present invention provides a doped perovskite solar cell structure. For details, see Figure 1 and Figure 2 , Figure 1 FIG. 1 is a schematic structural diagram of a doped perovskite solar cell structure provided by the present invention in one embodiment of the present invention, Figure 2 A schematic structural diagram of a doped perovskite solar cell structure provided in one embodiment of the present invention is shown, comprising:

[0043] Arranged from bottom to top are a conductive glass layer 1, a permeation layer 2, a power generation layer 3, a self-diffusion electron transport layer 4, a conductive layer 5 and a metal electrode layer 6.

[0044] Specifically, Figure 1 and Figure 2 As shown:

[0045] The conductive glass layer 1 is disposed on one side of the permeable layer 2 , and the power generation layer 3 is disposed on the side of the permeable layer 2 away from the conductive glass layer 1 .

[0046] Due to the good light transmittance of conductive glass, solar energy can enter the solar cell and be converted into electrical energy, and conductive glass can effectively conduct electric current and improve the efficiency of solar energy. In a specific embodiment, using FTO (fluorine-doped tin oxide) as conductive glass can prevent reflection and damage on the surface of the solar panel and protect the components inside the component from damage.

[0047] The permeation layer 2 is composed of phenylethylammonium iodide-tetrafluorotetracyanoquinoline dimethane (PEAI-F4TCNQ) diffused into Cs 0.05 FA 0.67 MA 0.33 PbB 1.31 I 1.69 In the perovskite film layer, p-type doping is formed, and the film thickness is 300-500nm. PEAI (phenylethylamine hydroiodide) in PEAI-F4TCNQ is distributed on the surface of the perovskite grains, reducing the surface roughness of the film and passivating the I vacancy defects on the surface. This surface modification helps to reduce the recombination loss of carriers during transmission, thereby improving the photoelectric conversion efficiency.

[0048] The F4TCNQ (tetrafluoro-tetracyanodimethyl-p-benzoquinone) in PEAI-F4TCNQ induces p-type doping on the surface of the perovskite film, improving the fill factor and device efficiency. P-type doping enhances the conductivity of the perovskite film by introducing holes, allowing photogenerated carriers to be collected and transmitted more efficiently.

[0049] Perovskite solar cells treated with PEAI-F4TCNQ film layer form a protective film layer because certain components in the film layer interact with moisture in the air, thereby preventing moisture from corroding the perovskite film and showing good humidity stability.

[0050] One side of the self-diffusion electron transport layer 4 is the power generation layer 3 , and the side of the self-diffusion electron transport layer 4 away from the power generation layer 3 is provided with the conductive layer 5 .

[0051] The power generation layer is the light absorption layer of the perovskite cell and is the core part of the entire cell. This embodiment uses a perovskite film layer as the power generation layer. Specifically, Cs 0.05 FA 0.67 MA 0.33 PbB 1.31 I 1.69 As the preparation material of the power generation layer, the thickness can be set to 300-500nm. In the design of the perovskite composition, a small amount of I defects and MA defects are the source of deep-level electron and hole defects in MAPbI3. Br doped in MAPbI3 has the effect of inhibiting hole defects. MA / FA / Cs can inhibit the appearance of yellow FAPbI3, which will lose the photoelectric effect. The introduction of MA and Cs can relax the stress of the crystal structure and stabilize the a-phase FAPbI3.

[0052] In this embodiment, the self-diffusing electron transport layer 4 is not an independent film layer, but is formed by spontaneous migration of the (3-(7-butyl-1,3,6,8-tetraoxo-3,6,7,8-tetrahydrobenzo[lmn]-[3,8]phenanthrolin-2(1H)-yl)propyl)phosphonic acid (NDP) component in the solution used to prepare the power generation layer to the surface of the ITO layer as the conductive layer during the deposition preparation process, and is used to promote charge transport and inhibit non-radiative recombination, thereby improving the photovoltaic performance and stability of the corresponding device. Specifically, the structure of the NDP (3-(7-butyl-1,3,6,8-tetraoxo-3,6,7,8-tetrahydrobenzo-[lmn][3,8]phenanthrolin-2(1H)-yl)propyl)phosphonic acid) component is as follows: Figure 3 As shown, Figure 3A schematic structural diagram of the NDP component in a doped perovskite solar cell structure provided by the present invention is shown.

[0053] The metal electrode layer 6 is disposed on a side of the conductive layer 5 away from the self-diffusing electron transport layer 4 .

[0054] Specifically, the conductive layer 9 of this embodiment is made of indium tin oxide (In2O3: SnO2), and the thickness of the conductive layer can be set to 150-200 nm. The metal electrode layer is made of copper (Cu), and the thickness of the metal electrode layer can be set to 10-100 nm.

[0055] In summary, the doped perovskite solar cell structure of the present invention diffuses the PEAI-F4TCNQ film into the Cs 0.05 FA 0.67 MA 0.33 PbB 1.31 I 1.69 P-type doping is formed in the perovskite film layer, and additional holes are introduced into the perovskite film layer, thereby increasing the concentration and mobility of holes, enhancing the conductivity of the perovskite film layer, and enhancing the mobility of carriers. NDP is added during the preparation of the perovskite solution, and its strong interaction with the indium tin oxide (ITO) electrode and large molecular size are utilized to ensure that it spontaneously migrates to the ITO surface during the single solution co-deposition process to form a self-diffusing electron transport layer, simplifying the manufacturing process of the perovskite battery.

[0056] The embodiment of the present invention further provides a method for preparing a perovskite battery, which specifically comprises the following steps:

[0057] S1. Prepare a permeation layer on the conductive glass layer by a slit coating method. Specifically, the preparation process of the permeation layer includes:

[0058] S1.1, prepare PEAI-F4TCNQ solution:

[0059] PEAI and 10 mg / mL 2,3,5,6-tetrafluoro-7,7',8,8'-tetracyanoline dimethane (F4TCNQ) were mixed at a weight ratio of 1:1 to obtain a PEAI-F4TCNQ solution.

[0060] S1.2. Coat the PEAI-F4TCNQ solution on the conductive glass layer by slit coating method with a thickness of 15-20 nm.

[0061] S1.3, prepare perovskite solution:

[0062] N,N-dimethylformamide (DMF, chemical formula: C3H7NO) and dimethyl sulfoxide (DMSO, chemical formula: C2H6OS) are mixed in a volume ratio of 4:1 to form a mixed solution.

[0063] FAI (formamidine hydroiodide, chemical formula CH5IN2), / FABr (formamidine hydrobromide, chemical formula CH5BrN2), CsI (cesium iodide), CsBr (cesium bromide), PbI2 (lead iodide), and PbBr2 (lead bromide) are added to the above mixed solution in a preset molar ratio. Specifically, the preset molar ratio can be 0.48:0.32:0.12:0.08:0.6:0.4.

[0064] Guanidine tetrafluoroborate (GuaBF4) was added to the mixed solution to improve the crystallinity of the perovskite film. The solution was heated at 50°C to accelerate the rate of the chemical reaction so that guanidine tetrafluoroborate reacted more fully with the components in the perovskite solution. The solution was stirred for 2 hours to ensure uniform mixing of the reactants and ensure that they were evenly distributed in the solution, thereby improving the reaction efficiency.

[0065] After completing the heating and stirring work, use 0.22um polytetrafluoroethylene (PTFE) to filter and remove impurities and insolubles produced during the reaction to obtain a relatively pure perovskite solution, providing conditions for the subsequent preparation of high-quality perovskite films.

[0066] S1.4, the filtered perovskite solution is coated on the PEAI-F4TCNQ film layer by a slit coating method, and the film layer thickness is 300-500nm. The film layer reacts with sunlight to generate electrons and holes.

[0067] S1.5, use 70℃ hot drying pure N2 to heat treat the film layer, so that the PEAI-F4TCNQ film layer diffuses to the Cs layer 0.05 FA 0.67 MA 0.33 PbB 1.31 I 1.69 In the perovskite film layer, a permeation layer with a p-type doped structure is formed.

[0068] S2. Coating a layer of perovskite solution containing (3-(7-butyl-1,3,6,8-tetraoxo-3,6,7,8-tetrahydrobenzo[lmn]-[3,8]phenanthroline-2(1H)yl)propyl)phosphonic acid on the permeation layer to form a power generation layer and a self-diffusion electron transport layer. Specifically, forming the power generation layer and the self-diffusion electron transport layer includes:

[0069] S2.1. Prepare perovskite solution:

[0070] N,N-dimethylformamide (DMF, chemical formula: C3H7NO) and dimethyl sulfoxide (DMSO, chemical formula: C2H6OS) are mixed in a volume ratio of 2:1 to form a mixed solution.

[0071] FAI (formamidine hydroiodide, chemical formula CH5IN2), MAI (methylammonium iodide, chemical formula CH3NH2·HI), PbI2 (lead iodide), and SnI2 (tin diiodide) are added to the above mixed solution in a preset molar ratio to obtain a precursor solution. Specifically, the preset molar ratio can be 0.7:0.3:0.5:0.5.

[0072] 10 mol% of tin difluoride (SnF2) and 1.5 mg / mL of (3-(7-butyl-1,3,6,8-tetraoxo-3,6,7,8-tetrahydrobenzo[lmn]-[3,8]phenanthroline-2(1H)yl)propyl)phosphonic acid (NDP) were added to the precursor solution, wherein the volume ratio of the precursor solution: SnF2: NDP was 1:0.00005:(0.0001-0.0002).

[0073] The mixed solution was stirred at room temperature for 2 hours, Sn powder (5 mg / ml) and NH2SO3H (0.3 mol%) were added thereto, and then filtered using 0.22 um polytetrafluoroethylene (PTFE) to remove impurities and insoluble matter produced during the reaction to obtain a relatively pure perovskite solution, providing conditions for the subsequent preparation of high-quality perovskite films.

[0074] Due to the strong interaction between NDP and ITO electrode and the large molecular size, it is ensured that NDP spontaneously migrates to the ITO surface during the co-deposition process of a single solution, which allows the layer to simultaneously form a perovskite light-absorbing layer and an electron transport layer, where the perovskite light-absorbing layer serves as a power generation layer and the electron transport layer serves as a self-diffusion electron transport layer. This self-organized NDP layer significantly improves the microstructure of the ETL / perovskite interface, promotes charge transport and suppresses non-radiative recombination, thereby improving the photovoltaic performance and stability of the corresponding device.

[0075] The filtered solution is slit coated on the permeation layer, and the film thickness is 300-500nm. The function of the film layer is to react with sunlight to generate electrons and holes.

[0076] S2.2. Heat treat the membrane layer using 70°C hot-drying pure N2.

[0077] S3. A layer of indium tin oxide is deposited on the self-diffusion electron transport layer by magnetron sputtering as a conductive layer, and the film thickness is 150 to 200 nm.

[0078] S4. Depositing a copper layer as a metal electrode layer on the conductive layer by screen printing, the thickness of the metal electrode layer is 10 to 100 nm.

[0079] In order to further clearly reflect the structural characteristics of the perovskite cell of the present invention, a doped perovskite solar cell structure, a preparation method and a cell provided by the present invention are described in detail below in combination with specific embodiments.

[0080] The reagents used in the following examples are all commercially available.

[0081] Embodiment 1:

[0082] (1) A PEAI-F4TCNQ film layer was prepared on the conductive glass layer by a slit coating method, and the film layer thickness was 18 nm.

[0083] (2) A layer of Cs was prepared on the PEAI-F4TCNQ film by slit coating. 0.05 FA 0.67 MA 0.33 PbB 1.31 I 1.69 Perovskite film layer, the film thickness is 400nm.

[0084] (3) The film layer was heat treated using pure N2 at 70°C to diffuse the PEAI-F4TCNQ film layer into the Cs 0.05 FA 0.67 MA 0.33 PbB 1.31 I 1.69 In the perovskite film layer, a P-type doped permeation layer is formed.

[0085] (4) Prepare a mixed solution of N,N-dimethylformamide (DMF, chemical formula: C3H7NO) and dimethyl sulfoxide (DMSO, chemical formula: C2H6OS) in a volume ratio of 2:1.

[0086] FAI (formamidine hydroiodide, chemical formula CH5IN2), MAI (methylammonium iodide, chemical formula CH3NH2·HI), PbI2 (lead iodide), and SnI2 (tin diiodide) are added to the above mixed solution in a preset molar ratio to obtain a precursor solution. Specifically, the preset molar ratio can be 0.7:0.3:0.5:0.5.

[0087] 10 mol% of tin difluoride (SnF2) and 1.5 mg / mL of (3-(7-butyl-1,3,6,8-tetraoxo-3,6,7,8-tetrahydrobenzo[lmn]-[3,8]phenanthroline-2(1H)yl)propyl)phosphonic acid (NDP) were added to the precursor solution, wherein the volume ratio of the precursor solution: SnF2: NDP was 1:0.00005:0.00015.

[0088] The mixed solution was stirred at room temperature for 2 hours, Sn powder (5 mg / ml) and NH2SO3H (0.3 mol%) were added thereto, and then filtered using 0.22 um polytetrafluoroethylene (PTFE) to remove impurities and insoluble matter produced during the reaction to obtain a relatively pure perovskite solution, providing conditions for the subsequent preparation of high-quality perovskite films.

[0089] The filtered solution was slit coated on the permeation layer with a film thickness of 400 nm, and the film was heat treated using pure N2 at 70°C.

[0090] (5) A layer of indium tin oxide as a conductive layer is deposited on the self-diffusing electron transport layer by magnetron sputtering, and the film thickness is 150 nm.

[0091] (6) A copper layer is deposited on the conductive layer by screen printing as a metal electrode layer. The thickness of the metal electrode layer is 50 nm.

[0092] Embodiment 2:

[0093] The thickness of the PEAI-F4TCNQ film layer in step (1) can be set to 5nm, 15nm, 20nm, and 25nm, and the thickness of the remaining film layers is the same. The 18nm thick PEAI-F4TCNQ film layer is used as a comparative reference example to test the effect of PEAI-F4TCNQ film layers of different thicknesses on the photoelectric conversion efficiency.

[0094] Embodiment 3:

[0095] The volume ratio of the precursor solution to NDP in step (1) can be set to 1:0.00005, 1:0.0001, 1:0.0002, 1:0.00025, and the other components are the same. The volume ratio of 1:0.00015 is used as a comparative reference example to test the effect of different contents of NDP on the photoelectric conversion efficiency of the battery.

[0096] Based on the preparation, observation and testing process of Example 1, Example 2 and Example 3, each example and comparison are shown in Table 1:

[0097] Table 1 Effects of different PEAI-F4TCNQ film thickness and NDP content on perovskite cell performance

[0098]

[0099] It can be seen from the results in Table 1 that the photoelectric conversion efficiency of the battery prepared by Example 1 of the present invention is significantly better than that of Examples 2 and 3. That is to say, when the thickness of the PEAI-F4TCNQ film is 18 nm and the volume ratio of the precursor solution: NDP is 1:0.00015, the doped perovskite solar cell of the present invention can better realize the photoelectric conversion of the battery while simplifying the battery structure.

[0100] Another embodiment of the present invention provides a doped perovskite solar cell, comprising the above-mentioned doped perovskite solar cell structure. The doped perovskite solar cell of the present invention diffuses the PEAI-F4TCNQ film layer into the Cs 0.05 FA 0.67 MA 0.33 PbB 1.31 I 1.69 The formation of P-type doping in the perovskite film layer and the provision of an NDP self-diffusion electron transport layer deposited together with the perovskite film layer can effectively reduce the cost and improve the efficiency compared to traditional stacked cells.

[0101] The above-mentioned embodiments only express several implementation methods of the present invention, and the description thereof is relatively specific and detailed, but it cannot be understood as limiting the scope of the patent of the present invention. It should be pointed out that, for ordinary technicians in this field, several variations and improvements can be made without departing from the concept of the present invention, which all belong to the protection scope of the present invention. Therefore, the protection scope of the patent of the present invention shall be subject to the attached claims.

Claims

1. A doped perovskite solar cell structure, characterized in that: It includes a conductive glass layer, a permeation layer, a power generation layer, a self-diffusion electron transport layer, a conductive layer and a metal electrode layer arranged in sequence from bottom to top; The conductive glass layer is disposed on one side of the permeable layer, and the power generation layer is disposed on the side of the permeable layer away from the conductive glass layer; One side of the self-diffusion electron transport layer is the power generation layer, and the side of the self-diffusion electron transport layer away from the power generation layer is provided with the conductive layer; The metal electrode layer is provided on one side of the conductive layer away from the self-diffusion electron transport layer; The penetration layer is a p-type doped structure prepared by diffusing phenethylammonium iodide-tetrafluorotetracyanoquinoline dimethane into a perovskite solution.

2. The doped perovskite solar cell structure according to claim 1, characterized in that: The thickness of the permeation layer is 300-500 nm.

3. The doped perovskite solar cell structure according to claim 1, characterized in that: The power generation layer is composed of Cs 0.05 FA 0.67 MA 0.33 PbB 1.31 I 1.69 Prepared.

4. The doped perovskite solar cell structure according to claim 1, characterized in that: The self-diffusion electron transport layer is formed by the upward migration of NDP in the power generation layer.

5. The doped perovskite solar cell structure according to claim 1, characterized in that: The thickness of the power generation layer is 300-500 nm.

6. The doped perovskite solar cell structure according to claim 1, characterized in that: The thickness of the conductive layer is 150-200 nm.

7. A method for preparing a doped perovskite solar cell, characterized in that: The doped perovskite solar cell structure according to any one of claims 1 to 6 comprises: A permeation layer is prepared on the conductive glass layer by a slot coating method; coating a layer of perovskite solution containing NDP on the permeation layer to form a power generation layer and a self-diffusion electron transport layer; Depositing a layer of indium tin oxide as a conductive layer on the self-diffusion electron transport layer by magnetron sputtering; A copper layer is deposited on the conductive layer by screen printing as a metal electrode layer.

8. The method for preparing a doped perovskite solar cell according to claim 7, characterized in that: The method of preparing a permeation layer on the conductive glass layer by a slit coating method comprises: A phenethylammonium iodide-tetrafluorotetracyanoquinoline dimethane film layer is prepared by coating on the conductive glass layer by a slit coating method; A layer of Cs was deposited on the phenethylammonium iodide-tetrafluorotetracyanoquinoline dimethane film layer by a slit coating method. 0.05 FA 0.67 MA 0.33 PbB 1.31 I 1.69 Perovskite film layer; The phenethylammonium iodide-tetrafluorotetracyanoquinolinodimethane film layer and the Cs 0.05 FA 0.67 MA 0.33 PbB 1.31 I 1.69 The perovskite film layer is heat treated to diffuse the phenethylammonium iodide-tetrafluorotetracyanoquinoline dimethane film layer into the Cs 0.05 FA 0.67 MA 0.33 PbB 1.31 I 1.69 A permeation layer is formed in the perovskite film layer.

9. The method for preparing a doped perovskite solar cell according to claim 7, characterized in that: The method comprises coating a layer of perovskite solution containing NDP on the permeation layer to form a power generation layer and a self-diffusion electron transport layer, comprising: In a solution of N,N-dimethylformamide and dimethyl sulfoxide in a volume ratio of 2:1, FAI / MAI / PbI2 / SnI2 in a molar ratio of 0.7:0.3:0.5:0.5 was added to obtain a first precursor solution; Add tin difluoride and NDP to the first precursor solution, stir at room temperature for 2 hours, add tin powder and aminosulfonic acid, and filter using 0.22 um polytetrafluoroethylene to obtain a second precursor solution; The filtered second precursor solution is coated on the permeation layer by using a slot coating method to form the power generation layer, wherein the NDP component can form the self-diffusion electron transport layer.

10. A doped perovskite solar cell, characterized in that: It comprises the doped perovskite solar cell structure as described in any one of claims 1 to 6.

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