A wafer crystal pulling device

Abstract

The present invention discloses a wafer crystal pulling device, which relates to the technical field of crystal pulling furnaces. Specifically, it includes a main furnace chamber. A secondary furnace chamber is fixedly connected to the top of the main furnace chamber. A transfer chamber is magnetically attracted to the top of the main furnace chamber. One side of the top end of the main furnace chamber is fixedly connected with an exhaust gas treatment structure and a feeding structure; the feeding structure includes a material cylinder. A spiral feeding shaft is movably connected inside the inner cavity of the material cylinder. Air channels are provided on the side wall of the material cylinder and inside the inner cavity of the spiral feeding shaft. One end of the air channel is movably connected with an intake pipe, and the other end of the intake pipe extends into the inner cavity of the main furnace chamber. In this wafer crystal pulling device, through the setting of the transfer chamber, during the process of taking the single crystal rod, the secondary furnace chamber does not need to be separated from the main furnace chamber, and the device can continue to work, improving the working efficiency of the device; during the movement of the single crystal rod, the clamping structure clamps and fixes the single crystal rod, which can omit the step of stabilizing the crystal rod, thereby improving the efficiency of taking the crystal rod.

Description

Technical Field

[0001] The present invention relates to the technical field of crystal pulling furnaces, and particularly to a wafer crystal pulling device. Background Art

[0002] The Czochralski method (Cz) is an important method for preparing single crystal silicon for semiconductors and solar energy. The high-purity silicon material placed in the crucible is heated by a thermal field composed of carbon materials to be melted, and then a seed crystal is immersed in the melt and undergoes a series of (seeding, shoulder formation, equal diameter, tailing, cooling) technological processes to finally obtain a single crystal rod. During this process, a crystal pulling furnace is required.

[0003] In the related art, during the use of the crystal pulling furnace, the operation of removing the crystal rod is usually as follows: first, unscrew the screws of the secondary chamber door, open the argon gas valve of the secondary chamber to inflate, and when the pressure of the vacuum gauge reaches zero, the air pressure inside and outside the furnace is balanced. Then open the secondary chamber door, lift the crystal rod into the secondary chamber, raise the secondary chamber furnace cylinder, rotate the secondary furnace chamber to the crystal taking frame, and after stabilizing the crystal rod, the crystal taking operation can be carried out. During this process, it is necessary to wait for the crystal rod to be stable before the crystal rod can be taken, which reduces the work efficiency. During the process of taking the crystal rod, the crystal pulling furnace cannot continue to work, further reducing the work efficiency. Moreover, the shaking generated during the transfer of the crystal rod easily causes the seed crystal rope to break strands, reducing the safety during the use of the crystal pulling furnace. At present, during the use of the crystal pulling furnace, the raw materials are directly put into the crucible. The newly added raw materials have a lower temperature, which will affect the melting speed of the raw materials and thus affect the production efficiency of the crystal rod. Based on this, the present application proposes a wafer crystal pulling device. Summary of the Invention

[0004] The present invention provides a wafer crystal pulling device, which solves the defects in the above-mentioned background art that during the process of taking the crystal rod, the crystal pulling furnace cannot continue to work, it is necessary to wait for the crystal rod to be stable before the crystal rod can be taken, and there is a risk of the seed crystal rope breaking strands; and when directly adding raw materials, the newly added raw materials have a lower temperature, which will affect the melting speed of the raw materials and thus affect the production efficiency of the crystal rod.

[0005] The present invention provides the following technical solution: A wafer crystal pulling device includes a main furnace chamber, a secondary furnace chamber is fixedly connected to the top of the main furnace chamber, a transfer chamber is magnetically attracted to the top of the main furnace chamber, and a tail gas treatment structure and a feeding structure are fixedly connected to one side of the top of the main furnace chamber;

[0006] The feeding structure includes a material cylinder, a spiral feeding shaft is movably connected inside the inner cavity of the material cylinder, air channels are provided on the side wall of the material cylinder and inside the inner cavity of the spiral feeding shaft, one end of the air channel is movably connected to an air inlet pipe, the other end of the air inlet pipe extends into the inner cavity of the main furnace chamber, the other end of the air channel is movably connected to an air outlet pipe, and the other end of the air outlet pipe is connected to the air inlet end of the tail gas treatment structure;

[0007] At the top of the inner cavity of the auxiliary furnace chamber, there is a seed crystal rope cutting structure, which includes a first clamping plate and scissors. On both sides of the top of the inner cavity of the auxiliary furnace chamber, there are first electric telescopic rods fixed. The other end of the first electric telescopic rod is fixedly connected to the first clamping plate. On one side of the top of the auxiliary furnace chamber, there is a pair of scissors connected through a second electric telescopic rod;

[0008] On one side of the bottom of the auxiliary furnace chamber close to the transfer chamber, there is an opening adapted to the single crystal rod. The inner side of the opening is movably connected with a sealing door. On the side of the auxiliary furnace chamber far from the opening, there is a pushing structure; the pushing structure includes a pushing plate adapted to the single crystal rod, and the pushing plate is fixedly connected to the auxiliary furnace chamber through a third electric telescopic rod;

[0009] At the top of the inner cavity of the transfer chamber, there is a clamping structure. Inside the inner cavity of the transfer chamber, there is a material transfer structure. The material transfer structure includes a fourth electric telescopic rod fixedly connected to one side of the transfer chamber far from the opening, a receiving plate fixedly connected to the fourth electric telescopic rod, a fifth electric telescopic rod fixedly connected to one side of the receiving plate far from the opening, a first servo motor fixedly connected to the fifth electric telescopic rod, and a support plate fixedly connected to the end of the output shaft of the first servo motor; On one side of the transfer chamber, there is a vacuum pumping structure.

[0010] Preferably, a magnet plate is fixedly connected to the top of the main furnace chamber. The transfer chamber is magnetically attracted to the main furnace chamber through the magnet plate. At the bottom of the transfer chamber and the top of the magnet plate, there are electromagnets fixed, and the repulsive magnetic force between the two electromagnets can offset the attractive magnetic force between the magnet plate and the transfer chamber.

[0011] Preferably, the outer surfaces of the main furnace chamber, the auxiliary furnace chamber, the sealing door, and the material cylinder are all wrapped with heat insulation pads.

[0012] Preferably, in the middle of the side of the first clamping plate away from the first electric telescopic rod, there is a cutting groove. The scissors are L-shaped. The vertical end of the scissors is fixedly connected to the end of the output shaft of the second electric telescopic rod, and the horizontal end of the scissors is adapted to the cutting groove.

[0013] Preferably, inside the inner cavity of the auxiliary furnace chamber, there is an opening and closing door structure, which includes a rotating ring movably connected to the inner cavity of the auxiliary furnace chamber and a second servo motor fixedly connected to the auxiliary furnace chamber. On the outer side wall of the rotating ring, there is a toothed ring. The end of the output shaft of the second servo motor is fixedly connected with a gear, and the gear meshes with the toothed ring. The rotating ring is fixedly connected to the sealing door through a connecting rod.

[0014] Preferably, the clamping structure includes an electric telescopic rod six fixedly connected to the top of the inner cavity of the transfer chamber, a fixing plate and a second clamping plate fixedly connected to the end of the output shaft of the electric telescopic rod six. The middle of the bottom of the fixing plate is movably connected with a double-headed ball screw. The outer rings at both ends of the double-headed ball screw are threadedly connected with the second clamping plate. A servo motor three is arranged on one side of the fixing plate, and the end of the output shaft of the servo motor three is fixedly connected to one end of the double-headed ball screw. An isolation pad is fixed to the inner side of the second clamping plate.

[0015] Preferably, the side of the transfer chamber close to the opening is an inwardly concave arc structure, and the inner diameter of the arc structure is adapted to the outer diameter of the secondary furnace chamber.

[0016] Preferably, the sides of both the push plate and the material receiving plate close to the opening are inwardly concave arcs, and the inner diameter of the arc is adapted to the outer diameter of the single crystal rod.

[0017] Compared with the prior art, the present invention has the following beneficial effects:

[0018] 1. For this single crystal pulling device for wafers, through the setting of the transfer chamber, during the process of taking the single crystal rod, the secondary furnace chamber does not need to be separated from the main furnace chamber, and the device can continue to work, improving the working efficiency of the device; during the movement of the single crystal rod, the clamping structure clamps and fixes the single crystal rod, which can omit the step of stabilizing the crystal rod and improve the efficiency of taking the crystal rod.

[0019] 2. For this single crystal pulling device for wafers, through the setting of the feeding structure, the tail gas can exchange heat with the raw materials located in the inner cavity of the feeding structure, realizing the recovery of the heat in the tail gas, and increasing the initial temperature of the raw materials, shortening the time required for the raw materials to melt, and thus improving the production efficiency of the device. BRIEF DESCRIPTION OF THE DRAWINGS

[0020] Figure 1 It is a front view of the structure of the present invention;

[0021] Figure 2 It is the structure of the present invention Figure 1 A rear view;

[0022] Figure 3 It is a bottom view of the secondary furnace chamber of the structure of the present invention;

[0023] Figure 4 It is an internal view of the secondary furnace chamber and the transfer chamber of the structure of the present invention;

[0024] Figure 5 It is the structure of the present invention Figure 4 A left side view.

[0025] In the figure: 1, main furnace chamber; 2, auxiliary furnace chamber; 3, transfer chamber; 4, barrel; 5, screw feeding shaft; 6, servo motor four; 7, air outlet pipe; 8, tail gas treatment structure; 10, seed crystal lifting and rotating structure; 11, air inlet pipe; 12, sealing door; 13, push plate; 14, clamping plate one; 15, electric telescopic rod one; 16, servo motor two; 17, gear; 18, rotating ring; 19, electric telescopic rod six; 20, fixing plate; 21, clamping plate two; 22, double-headed ball screw; 23, electric telescopic rod four; 24, material receiving plate; 25, electric telescopic rod five; 26, servo motor one; 27, support plate; 28, electric telescopic rod three; 29, electric telescopic rod two; 30, scissors; 31, vacuum pumping structure; 32, magnet plate. Detailed implementation manners

[0026] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. All other embodiments obtained by those of ordinary skill in the art based on the embodiments of the present invention without creative efforts shall fall within the protection scope of the present invention.

[0027] The present invention provides a wafer crystal pulling device, which includes a main furnace chamber 1. A top of the main furnace chamber 1 is fixedly connected with an auxiliary furnace chamber 2. A seed crystal lifting and rotating structure 10 is arranged on a top of the auxiliary furnace chamber 2. The main furnace chamber 1 and the seed crystal lifting and rotating structure 10 are both prior arts and will not be elaborated here.

[0028] At a top end of an inner cavity of the auxiliary furnace chamber 2, there is a seed crystal rope cutting structure. The seed crystal rope cutting structure includes a clamping plate one 14 and scissors 30. On both sides of a top end of the inner cavity of the auxiliary furnace chamber 2, electric telescopic rods one 15 are fixedly arranged. The other ends of the electric telescopic rods one 15 are fixedly connected with the clamping plate one 14. One side of a top end of the auxiliary furnace chamber 2 is connected with the scissors 30 through an electric telescopic rod two 29. And a cutting groove is arranged in a middle of a side of the clamping plate one 14 away from the electric telescopic rod one 15. The scissors 30 are L-shaped. A vertical end of the scissors 30 is fixedly connected with an end of an output shaft of the electric telescopic rod two 29. A horizontal end of the scissors 30 is adapted to the cutting groove. The horizontal end of the scissors 30 and the cutting groove are at the same height. Through the arrangement of the seed crystal rope cutting structure, the telescopic movement of the electric telescopic rod one 15 can change the position of the clamping plate one 14. The clamping and fixing of the seed crystal rope can be realized by the combined use of the two clamping plates one 14. The telescopic movement of the electric telescopic rod two 29 can change the position of the scissors 30 fixedly connected therewith, and the scissors 30 can cut the seed crystal rope.

[0029] One side of the bottom end of the auxiliary furnace chamber 2 is provided with an opening adapted to the single crystal rod. A sealing door 12 is movably connected to the inner side of the opening. The opening can be blocked by the sealing door 12, so that the inner cavity of the auxiliary furnace chamber 2 is in a sealed state. An opening and closing door structure is arranged in the inner cavity of the auxiliary furnace chamber 2. The opening and closing door structure includes a rotating ring 18 movably connected to the inner cavity of the auxiliary furnace chamber 2 and a second servo motor 16 fixedly connected to the auxiliary furnace chamber 2. A toothed ring is arranged on the outer side wall of the rotating ring 18. The end of the output shaft of the second servo motor 16 is fixedly connected with a gear 17 through a speed reducer. The gear 17 meshes with the toothed ring. The rotating ring 18 is fixedly connected with the sealing door 12 through a connecting rod. Through the arrangement of the opening and closing door structure, the rotation of the second servo motor 16 can drive the gear 17 fixedly connected thereto to rotate. The gear 17 can drive the rotating ring 18 to rotate through the toothed ring engaged therewith. The rotating ring 18 drives the sealing door 12 to rotate through the connecting rod fixedly connected thereto, so as to realize the opening and closing of the sealing door 12.

[0030] A pushing structure is arranged on one side of the auxiliary furnace chamber 2 far away from the opening. The pushing structure includes a pushing plate 13 adapted to the single crystal rod. The pushing plate 13 is fixedly connected to the auxiliary furnace chamber 2 through an electric telescopic rod three 28. One side of the pushing plate 13 close to the opening is an inwardly concave arc. The inner diameter of the arc is adapted to the outer diameter of the single crystal rod. The telescopic movement of the electric telescopic rod three 28 can change the position of the pushing plate 13, and the pushing plate 13 can be closely attached to the single crystal rod.

[0031] A transfer chamber 3 is magnetically attracted to the top of the main furnace chamber 1. A magnet plate 32 is fixedly connected to the top of the main furnace chamber 1. The transfer chamber 3 is magnetically attracted to the main furnace chamber 1 through the magnet plate 32. Electromagnets are fixed to the bottom of the transfer chamber 3 and the top of the magnet plate 32 respectively. The magnetic repulsive force between the two electromagnets can offset the magnetic attractive force between the magnet plate 32 and the transfer chamber 3. The model of the electromagnet can be XDA-50 / 42. When the device is in use, currents with the same direction are introduced into the two electromagnets, and the two electromagnets are in a magnetically repulsive state, which is convenient for the separation of the transfer chamber 3 from the magnet plate 32. In some embodiments of the present application, the material of the transfer chamber 3 can be an alloy with ferromagnetism.

[0032] One side of the transfer chamber 3 close to the opening is an inwardly concave arc structure. The inner diameter of the arc structure is adapted to the outer diameter of the auxiliary furnace chamber 2. Under the action of an external force, the transfer chamber 3 and the auxiliary furnace chamber 2 can be closely attached. A single crystal rod inlet and outlet is arranged on one side of the transfer chamber 3 close to the opening. When the opening is in an open state, the inner cavity of the transfer chamber 3 and the inner cavity of the auxiliary furnace chamber 2 are in a communicating state through the opening and the single crystal rod inlet and outlet.

[0033] Inside the inner cavity of the transfer chamber 3, there is a material transfer structure. The material transfer structure includes an electric telescopic rod four 23 fixedly connected to the side of the transfer chamber 3 far away from the opening, a receiving plate 24 fixedly connected to the electric telescopic rod four 23, an electric telescopic rod five 25 fixedly connected to the side of the receiving plate 24 far away from the opening, a servo motor one 26 fixedly connected to the electric telescopic rod five 25, and a support plate 27 fixedly connected to the end of the output shaft of the servo motor one 26. The telescoping of the electric telescopic rod four 23 can change the positions of the receiving plate 24 and the support plate 27. The receiving plate 24 and the support plate 27 can be moved into the inner cavity of the secondary furnace chamber 2. And the side of the receiving plate 24 close to the opening is an inwardly concave arc, and the inner diameter of the arc is adapted to the outer diameter of the single crystal rod. The cooperation of the receiving plate 24 and the pushing plate 13 can realize the clamping and fixing of the single crystal rod. The support plate 27 can support the single crystal rod. The cooperation of the material pushing structure and the material transfer structure can transfer the single crystal rod from the secondary furnace chamber 2 into the transfer chamber 3.

[0034] At the top of the inner cavity of the transfer chamber 3, there is a clamping structure. The clamping structure includes an electric telescopic rod six 19 fixedly connected to the top of the inner cavity of the transfer chamber 3, a fixing plate 20 fixedly connected to the end of the output shaft of the electric telescopic rod six 19, and a clamping plate two 21. In the middle of the bottom of the fixing plate 20, there is a movable connection with a double-headed ball screw 22. The outer rings at both ends of the double-headed ball screw 22 are both threadedly connected with the clamping plate two 21. On one side of the fixing plate 20, there is a servo motor three. The end of the output shaft of the servo motor three is fixedly connected to one end of the double-headed ball screw 22 through a speed reducer. An isolation pad is fixed inside the clamping plate two 21. The material of the isolation pad can be rubber. Through the setting of the clamping structure, the rotation of the servo motor three can drive the double-headed ball screw 22 to rotate. The rotation of the double-headed ball screw 22 makes the distance between the two clamping plates two 21 change. The two clamping plates two 21 can realize the clamping of the single crystal rod, which is convenient for the single crystal rod to be moved onto the crystal frame. And during the transfer process of the single crystal rod, the clamping plate two 21 clamps the single crystal rod, omitting the step of stabilizing the crystal rod and improving the efficiency of taking the crystal rod.

[0035] As can be seen from the above description, during the transfer process of the crystal rod, the device can continue the crystal pulling operation, improving the production efficiency of the crystal rod.

[0036] On one side of the transfer chamber 3, there is a vacuum pumping structure 31. The vacuum pumping structure 31 can be used to pump out the air in the transfer chamber 3 to avoid the air in the transfer chamber 3 affecting the operation of the device. The vacuum pumping structure 31 can be a vacuum pump.

[0037] One side of the top end of the main furnace chamber 1 is fixedly connected with an exhaust gas treatment structure 8 and a feeding structure; the feeding structure includes a material cylinder 4, a spiral feeding shaft 5 is movably connected in the inner cavity of the material cylinder 4, air channels are arranged in the side wall of the material cylinder 4 and the inner cavity of the spiral feeding shaft 5, one end of the air channel is movably connected with an air inlet pipe 11, the other end of the air inlet pipe 11 extends into the inner cavity of the main furnace chamber 1, the other end of the air channel is movably connected with an air outlet pipe 7, and the other end of the air outlet pipe 7 is connected with the air inlet end of the exhaust gas treatment structure 8. The air channel can be a spiral air channel. The exhaust gas treatment structure 8 can filter and treat the exhaust gas through a filter element. One end of the material cylinder 4 is provided with a fourth servo motor 6, and the end of the output shaft of the fourth servo motor 6 is connected with the spiral feeding shaft 5. The spiral feeding shaft 5 can be driven to rotate by using the fourth servo motor 6, so as to realize feeding.

[0038] Through the setting of the feeding structure, after the exhaust gas is discharged from the main furnace chamber 1, it enters the feeding structure. After the exhaust gas exchanges heat indirectly with the raw materials in the feeding structure, it enters the exhaust gas treatment structure 8 through the air outlet pipe 7 for treatment, realizing the recovery of the heat in the exhaust gas, and increasing the initial temperature of the raw materials, shortening the time required for the raw materials to melt, and thus improving the production efficiency of the device.

[0039] The outer surfaces of the main furnace chamber, the auxiliary furnace chamber, the sealing door and the material cylinder are all wrapped with heat insulation pads to improve the heat insulation effect of the device and reduce heat loss.

[0040] The electrical components involved in this application are all prior art. Those skilled in the art understand their connection methods. Through those skilled in the art, all the electrical components in this application are connected to their adapted power supplies through wires, and a suitable controller is selected according to the actual situation to meet the control requirements. For the specific connection and control sequence, refer to the following description. The electrical components are electrically connected in the order of their sequential operation. Their detailed connection means are well-known techniques in the art. The following mainly introduces the working principle and process, and no further description of electrical control will be made.

[0041] In summary, when the wafer crystal pulling device is in use, the tail gas treatment structure 8 extracts and treats the excess gas in the main furnace chamber 1. Before the tail gas enters the interior of the tail gas treatment structure 8, the tail gas passes through the air duct. During the flow of the tail gas in the air duct, heat exchange occurs between the tail gas and the raw material located in the feeding structure, increasing the initial temperature of the raw material and shortening the time required for the raw material to melt, thereby improving the production efficiency of the device. When it is necessary to move the single crystal rod located in the auxiliary furnace chamber 2 into the crystal frame, the transfer chamber 3 is closely attached to the auxiliary furnace chamber 2. After the air in the transfer chamber 3 is evacuated by the vacuum pumping structure 31, the sealing door 12 is opened, and the inner cavity of the auxiliary furnace chamber 2 is in communication with the inner cavity of the main furnace chamber 1. Argon is introduced into the auxiliary furnace chamber 2 until the pressure in the auxiliary furnace chamber 2 is the same as the pressure in the main furnace chamber 1. Then, the pushing structure and the material taking structure operate. After the single crystal rod is jointly clamped by the pushing plate 13 and the receiving plate 24, the seed crystal rope cutting structure operates to cut the seed crystal rope. Then, the pushing structure and the material taking structure operate. The coordinated use of the pushing structure and the material taking structure transfers the single crystal rod from the auxiliary furnace chamber 2 into the transfer chamber 3. After the clamping structure clamps the single crystal rod, the pushing structure resets, and the sealing door 12 moves in the reverse direction until the sealing door 12 seals the opening and the inner cavity of the auxiliary furnace chamber 2 is in a sealed state. The device can continue the crystal pulling operation. Electricity is supplied to the electromagnet to release the force between the transfer chamber 3 and the magnet plate 32. The main and auxiliary chamber lifting and supporting mechanism in the prior art is used to drive the transfer chamber 3 to move. During the movement, the single crystal rod and the transfer chamber 3 are in a relatively static state until the single crystal rod moves above the crystal frame. The electric telescopic rod five 25 extends, driving the support plate 27 to move downward until the support plate 27 moves outside the transfer chamber 3. The servo motor one 26 drives the support plate 27 to rotate until the support plate 27 is separated from the single crystal rod. The electric telescopic rod six 19 extends, and the electric telescopic rod six 19 can place the single crystal rod into the crystal frame.

[0042] All the standard parts used in the present invention can be purchased from the market. The special-shaped parts can be customized according to the description in the specification and the drawings. The specific connection methods of each part all adopt conventional means such as bolts, rivets, and welding that are mature in the prior art. The machines, parts, and equipment all adopt conventional models in the prior art, which will not be elaborated here. The content not described in detail in this specification belongs to the prior art well-known to those skilled in the art. Although the embodiments of the present invention have been shown and described, for those of ordinary skill in the art, it can be understood that various changes, modifications, substitutions, and variations can be made to these embodiments without departing from the principle and spirit of the present invention. The scope of the present invention is defined by the appended claims and their equivalents.

Claims

1. A wafer pulling device, comprising a main furnace chamber (1), characterized in that: The top of the main furnace chamber (1) is fixedly connected to the auxiliary furnace chamber (2), the top of the main furnace chamber (1) is magnetically attracted to the transfer chamber (3), and one side of the top of the main furnace chamber (1) is fixedly connected to an exhaust gas treatment structure (8) and a feed structure; The feeding structure comprises a barrel (4), the inner cavity of the barrel (4) is movably connected to a spiral feeding shaft (5), the side wall of the barrel (4) and the inner cavity of the spiral feeding shaft (5) are both provided with air passages, one end of the air passage is movably connected to an air inlet pipe (11), the other end of the air inlet pipe (11) extends into the inner cavity of the main furnace chamber (1), the other end of the air passage is movably connected to an air outlet pipe (7), the other end of the air outlet pipe (7) is connected to the air inlet end of the exhaust gas treatment structure (8); A seed crystal rope cutting structure is provided at the top of the inner cavity of the auxiliary furnace chamber (2), and the seed crystal rope cutting structure comprises a clamping plate (14) and a pair of scissors (30). Electric telescopic rods (15) are fixed to both sides of the top of the inner cavity of the auxiliary furnace chamber (2), and the other end of the electric telescopic rod (15) is fixedly connected to the clamping plate (14). One side of the top of the auxiliary furnace chamber (2) is connected to the scissors (30) via electric telescopic rods (29); An opening adapted to fit the single crystal rod is provided on one side of the bottom end of the auxiliary furnace chamber (2) close to the transfer chamber (3), a sealing door (12) is movably connected to the inner side of the opening, and a material pushing structure is provided on the side of the auxiliary furnace chamber (2) away from the opening; the material pushing structure comprises a pushing plate (13) adapted to fit the single crystal rod, and the pushing plate (13) is fixedly connected to the auxiliary furnace chamber (2) via a third electric telescopic rod (28); A clamping structure is provided at the top of the inner cavity of the transfer chamber (3); a material moving structure is provided in the inner cavity of the transfer chamber (3); the material moving structure comprises an electric telescopic rod four (23) fixedly connected to the side of the transfer chamber (3) away from the opening, a material receiving plate (24) fixedly connected to the electric telescopic rod four (23), an electric telescopic rod five (25) fixedly connected to the side of the material receiving plate (24) away from the opening, a servo motor one (26) fixedly connected to the electric telescopic rod five (25), and a support plate (27) fixedly connected to the end of the output shaft of the servo motor one (26); a vacuum pumping structure (31) is provided on one side of the transfer chamber (3).

2. A wafer pulling device according to claim 1, characterized in that: A magnet plate (32) is fixedly connected to the top of the main furnace chamber (1), and the transfer chamber (3) is magnetically attracted to the main furnace chamber (1) via the magnet plate (32). Electromagnets are fixed to the bottom of the transfer chamber (3) and the top of the magnet plate (32), and the magnetic repulsive force between the two electromagnets can offset the magnetic attractive force between the magnet plate (32) and the transfer chamber (3).

3. A wafer pulling device according to claim 1, characterized in that: The outer surfaces of the main furnace chamber (1), the auxiliary furnace chamber (2), the sealing door (12) and the barrel (4) are all wrapped with thermal insulation pads.

4. A wafer pulling device according to claim 1, characterized in that: A cutting groove is provided in the middle of the clamping plate 1 (14) away from the electric telescopic rod 1 (15), the scissors (30) are L-shaped, the vertical end of the scissors (30) is fixedly connected to the end of the output shaft of the electric telescopic rod 2 (29), and the horizontal end of the scissors (30) is adapted to the cutting groove.

5. The wafer pulling device according to claim 1, characterized in that: An opening and closing door structure is provided in the inner cavity of the auxiliary furnace chamber (2), and the opening and closing door structure comprises a rotating ring (18) movably connected to the inner cavity of the auxiliary furnace chamber (2) and a servo motor 2 (16) fixedly connected to the auxiliary furnace chamber (2), an outer wall of the rotating ring (18) is provided with a gear ring, a gear (17) is fixedly connected to the end of the output shaft of the servo motor 2 (16), the gear (17) meshing with the gear ring, and the rotating ring (18) is fixedly connected to the sealing door (12) via a connecting rod.

6. A wafer pulling device according to claim 1, characterized in that: The clamping structure comprises an electric telescopic rod six (19) fixedly connected to the top of the inner cavity of the transfer chamber (3), a fixed plate (20) fixedly connected to the end of the output shaft of the electric telescopic rod six (19) and a clamping plate two (21), a double-headed ball screw (22) is movably connected to the middle of the bottom of the fixed plate (20), the outer rings of both ends of the double-headed ball screw (22) are threadedly connected to the clamping plate two (21), a servo motor three is arranged on one side of the fixed plate (20), the end of the output shaft of the servo motor three is fixedly connected to one end of the double-headed ball screw (22), and an isolation pad is fixed on the inner side of the clamping plate two (21).

7. The wafer pulling device according to claim 1, characterized in that: The side of the transfer chamber (3) close to the opening is an inwardly concave arc-shaped structure, and the inner diameter of the arc-shaped structure is adapted to the outer diameter of the auxiliary furnace chamber (2).

8. The wafer pulling device according to claim 1, characterized in that: The push plate (13) and the receiving plate (24) are both in an inwardly concave arc shape on one side close to the opening, and the inner diameter of the arc is adapted to the outer diameter of the single crystal rod.

Images