Growth assembly and growth device for reducing edge stress of silicon carbide

Abstract

The invention discloses a growth assembly and a growth device for reducing edge stress of silicon carbide, and relates to the field of silicon carbide crystal preparation. The growth assembly comprises a graphite cylinder, a plurality of telescopic assemblies and a plurality of graphite plates, the multiple telescopic assemblies are connected with the graphite cylinder, and the multiple graphite plates are sequentially arranged in the graphite cylinder in the circumferential direction and connected with the multiple telescopic assemblies in a one-to-one correspondence mode. The plurality of telescopic assemblies are used for driving the plurality of graphite plates to gather and enclose a growth channel for guiding the growth of the silicon carbide crystals, and are also used for driving the plurality of graphite plates to move away from the silicon carbide crystals when guiding the growth of the silicon carbide crystals is finished. The growth assembly for reducing the edge stress of the silicon carbide can guide the growth of the silicon carbide crystal and can reduce the edge stress of the silicon carbide crystal at the end of growth, so that the growth quality is improved.

Description

Technical Field

[0001] The present invention relates to the field of silicon carbide crystal preparation, and in particular to a growth component and a growth device for reducing silicon carbide edge stress. Background Art

[0002] At present, the market often uses a growth device equipped with a graphite crucible to implement a physical vapor transport method to prepare silicon carbide crystals. This type of growth device usually loads silicon carbide raw material into a graphite crucible, installs a silicon carbide seed crystal on the top of the graphite crucible, and heats the graphite crucible to sublime the silicon carbide raw material and precipitate single crystal silicon carbide crystals on the silicon carbide seed crystal.

[0003] In order to achieve controllable growth of silicon carbide crystals, an additional growth component is often installed inside the graphite crucible. The growth component forms a growth channel for guiding the growth of silicon carbide crystals. During the growth process, cylindrical crystals are formed under the constraints of the growth channel.

[0004] When the growth of the silicon carbide crystal is finished, the temperature inside the graphite crucible decreases, and the silicon carbide crystal will shrink to a certain extent. Since its edge is still constrained by the growth channel, it will produce greater edge stress during shrinkage, resulting in a sudden increase in dislocations at the edge of the silicon carbide crystal, seriously affecting the growth quality. Summary of the invention

[0005] The object of the present invention is to provide a growth component for reducing edge stress of silicon carbide, which can not only guide the growth of silicon carbide crystals, but also reduce the edge stress of silicon carbide crystals at the end of growth, thereby improving the growth quality.

[0006] Another object of the present invention is to provide a growth device that can both guide the growth of silicon carbide crystals and reduce the edge stress of the silicon carbide crystals at the end of growth, thereby improving the growth quality.

[0007] The embodiment of the present invention provides a technical solution:

[0008] A growth assembly for reducing edge stress of silicon carbide comprises a graphite cylinder, a plurality of telescopic assemblies and a plurality of graphite plates, wherein the plurality of telescopic assemblies are respectively connected to the graphite cylinder, the plurality of graphite plates are sequentially arranged circumferentially inside the graphite cylinder and are connected to the plurality of telescopic assemblies in a one-to-one correspondence, the plurality of telescopic assemblies are used to drive the plurality of graphite plates to gather together to form a growth channel for guiding the growth of silicon carbide crystals, and are also used to drive the plurality of graphite plates to move away from the silicon carbide crystals when guiding the growth of the silicon carbide crystals.

[0009] In an optional embodiment, the telescopic assembly includes a thermal expansion component having a thermal expansion coefficient greater than that of graphite and silicon carbide crystals. The thermal expansion component is connected to the corresponding graphite plate and is used to expand under a first temperature condition to drive the graphite plate to move to form the growth channel, and is also used to contract under a second temperature condition to drive the graphite plate to move away from the silicon carbide crystal.

[0010] In an optional embodiment, the telescopic assembly also includes a graphite mounting seat and a graphite push-pull rod, one end of the graphite mounting seat is connected to the inner wall of the graphite cylinder, and the other end is recessed with a telescopic channel; the thermal expansion component is arranged in the telescopic channel, and the thermal expansion component is connected to the corresponding graphite plate through the graphite push-pull rod.

[0011] In an optional embodiment, both ends of the graphite tube are provided with circumferentially extending graphite ring walls, and the two graphite ring walls extend into the interior of the graphite tube. In the axial direction of the graphite tube, the multiple graphite plates are always located between the two graphite ring walls, and the opposite ends of any graphite plate are respectively fitted with the two graphite ring walls.

[0012] In an optional embodiment, the growth component further includes a plurality of graphite shielding members, and the graphite shielding members are movably arranged between any two adjacent graphite plates. When the plurality of graphite plates are separated from each other, the two graphite ring walls, the plurality of graphite plates and the plurality of graphite shielding members and the graphite cylinder together form a sealed installation clamp cavity, and the plurality of telescopic components are accommodated in the installation clamp cavity.

[0013] In an optional embodiment, surfaces of the graphite annular wall, the graphite plate, and the graphite shielding member facing away from the mounting clamp cavity are all provided with a protective layer.

[0014] In an optional embodiment, the mounting clamp cavity is filled with a flexible filler, and the plurality of telescopic components are wrapped by the flexible filler.

[0015] In an optional embodiment, the plurality of telescopic components are evenly distributed in the circumferential direction of the graphite cylinder, and the plurality of telescopic components are respectively telescoped in a plurality of diameter extension directions of the graphite cylinder.

[0016] In an optional embodiment, in a plane perpendicular to the axis of the graphite cylinder, a projection of a side surface of each of the graphite plates participating in surrounding the growth channel is in an arc shape, and the growth channel is in a cylindrical shape.

[0017] An embodiment of the present invention also provides a growth device, including a graphite crucible and the aforementioned growth assembly for reducing the edge stress of silicon carbide, wherein the growth assembly includes a graphite cylinder, a plurality of telescopic assemblies and a plurality of graphite plates, wherein the plurality of telescopic assemblies are respectively connected to the graphite cylinder, and the plurality of graphite plates are sequentially arranged circumferentially inside the graphite cylinder and are connected one-to-one with the plurality of telescopic assemblies, and the plurality of telescopic assemblies are used to drive the plurality of graphite plates to gather together to form a growth channel for guiding the growth of silicon carbide crystals, and are also used to drive the plurality of graphite plates to move away from the silicon carbide crystals when guiding the growth of silicon carbide crystals. The graphite cylinder is coaxially sleeved inside the graphite crucible, and the outer wall of the graphite cylinder is attached to and connected to the inner wall of the graphite crucible.

[0018] Compared with the prior art, the growth assembly for reducing the edge stress of silicon carbide provided by the present invention, during the normal growth process of silicon carbide crystals, multiple graphite plates gather to form a growth channel to guide the normal growth of silicon carbide crystals. At the end of growth, multiple telescopic assemblies drive multiple graphite plates to move away from the silicon carbide crystals and actively separate from the edges of the silicon carbide crystals, thereby avoiding the contraction of the silicon carbide crystals during the cooling process and generating large edge stress, avoiding edge dislocations, and improving the crystal quality. Therefore, the beneficial effects of the growth assembly for reducing the edge stress of silicon carbide provided by the present invention include: it can not only guide the growth of silicon carbide crystals, but also reduce the edge stress of silicon carbide crystals at the end of growth, thereby improving the growth quality. BRIEF DESCRIPTION OF THE DRAWINGS

[0019] In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the accompanying drawings required for use in the embodiments are briefly introduced below. It should be understood that the following drawings only illustrate certain embodiments of the present invention and should not be regarded as limiting the scope. For those of ordinary skill in the art, other related drawings can also be obtained based on these drawings without creative work.

[0020] Figure 1 A cross-sectional view of a growth device provided for an embodiment of the present invention;

[0021] Figure 2 A cross-sectional view of a growth assembly for reducing edge stress of silicon carbide provided by an embodiment of the present invention;

[0022] Figure 3 for Figure 2 A cross-sectional view of the telescopic assembly;

[0023] Figure 4 for Figure 2 A schematic diagram of a connection structure of two adjacent graphite plates;

[0024] Figure 5 for Figure 2Schematic diagram of another connection structure of two adjacent graphite plates.

[0025] Icons: 10-growth device; 11-graphite crucible; 100-growth assembly; 110-graphite cylinder; 111-graphite ring wall; 120-telescopic assembly; 121-thermal expansion member; 122-graphite mounting seat; 1221-telescopic channel; 123-graphite push-pull rod; 130-graphite plate; 131-assembly groove; 140-growth channel; 150-graphite shielding member; 160-mounting clamp cavity. DETAILED DESCRIPTION

[0026] In order to make the purpose, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Generally, the components of the embodiments of the present invention described and shown in the drawings here can be arranged and designed in various different configurations.

[0027] Therefore, the following detailed description of the embodiments of the present invention provided in the accompanying drawings is not intended to limit the scope of the invention claimed for protection, but merely represents selected embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0028] It should be noted that similar reference numerals and letters denote similar items in the following drawings, and therefore, once an item is defined in one drawing, further definition and explanation thereof is not required in subsequent drawings.

[0029] In the description of the present invention, it should be understood that the terms "upper", "lower", "inside", "outside", "left", "right", etc. indicate directions or positional relationships based on the directions or positional relationships shown in the accompanying drawings, or are directions or positional relationships in which the product of the invention is usually placed when in use, or are directions or positional relationships commonly understood by those skilled in the art. These directions or positional relationships are only for the convenience of describing the present invention and simplifying the description, and do not indicate or imply that the device or element referred to must have a specific direction, be constructed and operated in a specific direction, and therefore should not be understood as a limitation on the present invention.

[0030] Furthermore, the terms “first”, “second”, etc. are merely used for distinguishing descriptions and are not to be understood as indicating or implying relative importance.

[0031] In the description of the present invention, it is also necessary to explain that, unless otherwise clearly specified and limited, the terms such as "setting" and "connection" should be understood in a broad sense. For example, "connection" can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection or an electrical connection; it can be a direct connection, or an indirect connection through an intermediate medium, or it can be the internal communication of two elements. For ordinary technicians in this field, the specific meanings of the above terms in the present invention can be understood according to specific circumstances.

[0032] The specific implementation modes of the present invention are described in detail below in conjunction with the accompanying drawings.

[0033] Example

[0034] See also Figure 1 , Figure 1 Shown is a cross-sectional view of the growth device 10 provided in this embodiment.

[0035] The growth device 10 provided in this embodiment is used to implement the physical vapor transport method to grow silicon carbide crystals, which can not only guide the growth of silicon carbide crystals, but also reduce the edge stress of silicon carbide crystals at the end of growth, thereby obtaining silicon carbide crystals with higher quality.

[0036] The growth device 10 includes a graphite crucible 11 and a growth component 100 for reducing the edge stress of silicon carbide. The graphite crucible 11 provides a growth chamber for the growth of silicon carbide crystals. The growth component 100 is located above the inside of the growth chamber and is used to guide the growth of silicon carbide crystals. The bottom of the growth chamber is used to hold silicon carbide powder.

[0037] It can be understood that a seed crystal is also provided on the inner wall of the cover of the graphite crucible 11. The growth device 10 provided in this embodiment is also configured with a heating device in actual application. The heating device heats the graphite crucible 11 so that the silicon carbide powder sublimates to form a growth atmosphere. The growth atmosphere flows upward under the influence of the temperature gradient and reaches the surface of the seed crystal to precipitate silicon carbide crystals.

[0038] During the growth process, the silicon carbide crystal grows in a columnar shape due to the restraint and guidance of the growth assembly 100. When the growth of the silicon carbide crystal ends, the heating device reduces the heating efficiency or even shuts down to reduce the temperature in the growth chamber and cool the silicon carbide crystal.

[0039] In order to avoid the generation of large edge stress when the silicon carbide crystal cools and shrinks, the growth assembly 100 provided in this embodiment can release the constraint on the silicon carbide crystal in advance. Figure 2 , Figure 2 Shown is a cross-sectional view of the growth assembly 100 provided in this embodiment.

[0040] The growth assembly 100 includes a graphite cylinder 110, a plurality of telescopic assemblies 120, and a plurality of graphite plates 130. The graphite cylinder 110 is coaxially sleeved inside the graphite crucible 11, and the outer wall of the graphite cylinder 110 is attached to and connected to the inner wall of the graphite crucible 11. The plurality of telescopic assemblies 120 are respectively connected to the graphite cylinder 110, and the plurality of graphite plates 130 are sequentially arranged circumferentially inside the graphite cylinder 110, and are connected to the plurality of telescopic assemblies 120 one by one.

[0041] The multiple telescopic components 120 are used to drive the multiple graphite plates 130 to gather together to form a growth channel 140 for guiding the growth of silicon carbide crystals. They are also used to drive the multiple graphite plates 130 to move away from the silicon carbide crystals when the growth of the silicon carbide crystals is completed to release the constraints on the silicon carbide crystals.

[0042] It is understandable that during the normal growth of the silicon carbide crystal, the multiple graphite plates 130 maintain a gathered state, the silicon carbide crystal continues to grow in the growth channel 140, and the growth channel 140 composed of the multiple graphite plates 130 constrains the edge of the silicon carbide crystal.

[0043] When the growth of the silicon carbide crystal is completed, the multiple telescopic components 120 drive the multiple graphite plates 130 to move and separate from the silicon carbide crystal, thereby releasing the constraints on the edges of the silicon carbide crystal, so that when the temperature is subsequently reduced, the silicon carbide crystal can shrink freely, and its edges will no longer generate stress due to inconsistent shrinkage degrees with the graphite plates 130.

[0044] It should be noted that the graphite cylinder 110 can be integrally formed with the graphite crucible 11 , that is, it can be a part of the inherent structure of the graphite crucible 11 .

[0045] In this embodiment, the plurality of telescopic components 120 are evenly distributed in the circumferential direction of the graphite cylinder 110, and the plurality of telescopic components 120 are respectively telescoped in the plurality of diameter extension directions of the graphite cylinder 110. Moreover, in a plane perpendicular to the axis of the graphite cylinder 110, the projection of one side surface of the growth channel 140 formed by each graphite plate 130 is in an arc shape, and the growth channel 140 is in a cylindrical shape.

[0046] It is understandable that the number of graphite plates 130 corresponds to the number of telescopic components 120 , and the number of graphite plates 130 can be adjusted under different application conditions.

[0047] Please refer to Figure 3 , Figure 3 Shown is a cross-sectional view of the telescoping assembly 120 .

[0048] In this embodiment, the telescopic assembly 120 includes a thermal expansion member 121, a graphite mounting seat 122 and a graphite push-pull rod 123. One end of the graphite mounting seat 122 is connected to the inner wall of the graphite cylinder 110, and the other end is recessed with a telescopic channel 1221. The thermal expansion member 121 is arranged in the telescopic channel 1221, and the thermal expansion member 121 is connected to the corresponding graphite plate 130 through the graphite push-pull rod 123.

[0049] Specifically, in this embodiment, the heat expansion member 121 is columnar, with threaded columns at both ends, threaded holes are provided at the bottom of the telescopic channel 1221 and one end of the graphite push-pull rod 123 extending into the telescopic channel 1221, and the two ends of the heat expansion member 121 are threadedly matched with the graphite push-pull rod 123 and the graphite mounting seat 122.

[0050] The thermal expansion member 121 is used to expand under a first temperature condition to drive the graphite plate 130 to move to form a growth channel 140, and is also used to shrink under a second temperature condition to drive the graphite plate 130 to move away from the silicon carbide crystal. Preferably, the first temperature condition is between 2000°C and 2400°C, and the second temperature condition is less than 2000°C.

[0051] It is understandable that the first temperature condition and the second temperature condition are not fixed, and depend on the specific material of the thermal expansion member 121, but the temperature under the first temperature condition is greater than the temperature under the second temperature condition. The specific material of the thermal expansion member 121 can be selected according to the actual application conditions, and can specifically be tantalum carbide, tantalum hafnium carbide, tungsten alloy, zirconium diboride, titanium diboride, titanium carbide, etc.

[0052] The thermal expansion coefficient of the thermal expansion member 121 is greater than that of graphite and silicon carbide crystals. When the temperature in the growth chamber decreases, the thermal expansion member 121 contracts before the graphite and silicon carbide crystals, thereby pulling the graphite plate 130 away from the silicon carbide crystals before the graphite plate 130 and the silicon carbide crystals are deformed, that is, a larger gap is generated between the graphite plate 130 and the silicon carbide crystals, thereby reducing the edge stress of the silicon carbide crystals.

[0053] It should be noted that, in this embodiment, all parts of the growth assembly 100 except the heat expansion member 121 are made of graphite material, in order to avoid the introduction of new impurities during the growth of the silicon carbide crystal and ensure the quality of the silicon carbide crystal.

[0054] After the growth of the current silicon carbide crystal is completed, the multiple telescopic components 120 remain in a contracted state in the graphite crucible 11. When the next growth is performed, the heating device heats the graphite crucible 11, and when the temperature in the growth chamber rises to a certain level, the multiple telescopic components 120 extend, driving the multiple graphite plates 130 to move to a gathered state, and forming a growth channel 140 below the seed crystal.

[0055] It can be seen that the growth assembly 100 provided in this embodiment can be reused multiple times, which can significantly improve the growth efficiency and reduce the production cost.

[0056] In order to prevent the growth atmosphere in the growth chamber from contaminating the telescopic assembly 120, in the present embodiment, both ends of the graphite tube 110 are provided with circumferentially extending graphite ring walls 111, and the two graphite ring walls 111 extend into the interior of the graphite tube 110. In the axial direction of the graphite tube 110, the plurality of graphite plates 130 are always located between the two graphite ring walls 111, and the opposite ends of any graphite plate 130 are respectively fitted with the two graphite ring walls 111.

[0057] Please refer to Figure 4 , Figure 4 FIG. 1 is a schematic diagram of a connection structure of two adjacent graphite plates 130 .

[0058] In this embodiment, the growth assembly 100 further includes a plurality of graphite shielding members 150, and a graphite shielding member 150 is movably disposed between any two adjacent graphite plates 130. When the plurality of graphite plates 130 are separated from each other, the two graphite ring walls 111, the plurality of graphite plates 130, the plurality of graphite shielding members 150 and the graphite cylinder 110 together form a sealed mounting clamp chamber 160, and the plurality of telescopic assemblies 120 are accommodated in the mounting clamp chamber 160.

[0059] When the multiple graphite plates 130 surround the growth channel 140, the two graphite ring walls 111, the multiple graphite plates 130 and the graphite cylinder 110 together surround a sealed mounting clamp chamber 160. It can be understood that the telescopic assembly 120 is always in the mounting clamp chamber 160, and the growth atmosphere in the growth chamber cannot enter the mounting clamp chamber 160, which can ensure that the telescopic assembly 120 is not contaminated and avoid the generation of new impurities, thereby ensuring the quality of the silicon carbide crystal.

[0060] In this embodiment, each graphite plate 130 is provided with a recessed assembly groove 131 at both ends in the circumferential direction, and a group of assembly grooves 131 of two adjacent graphite plates 130 are arranged opposite to each other in the circumferential direction. The opposite ends of the graphite shielding member 150 can be slidably embedded in the two assembly grooves 131, respectively, and the two ends of the graphite shielding member 150 are respectively fitted with the two graphite annular walls 111.

[0061] When the plurality of graphite plates 130 are gathered together to form the growth channel 140, the graphite shielding member 150 between two adjacent graphite plates 130 is completely accommodated in the space formed by the buckling of the two corresponding assembly grooves 131. Figure 4 shown.

[0062] Please refer to Figure 5 , Figure 5 FIG. 1 is a schematic diagram of another connection structure of two adjacent graphite plates 130 .

[0063] In the process that the multiple telescopic components 120 drive the multiple graphite plates 130 to gradually move away from the silicon carbide crystal, the graphite shielding member 150 between the two graphite plates 130 gradually slides out of the two assembly grooves 131, thereby sealing the gap between the two graphite plates 130 formed due to separation. Figure 5 As shown, it is ensured that the mounting clip cavity 160 always maintains a sealed state.

[0064] Furthermore, in this embodiment, the surfaces of the graphite ring wall 111, the graphite plate 130 and the graphite shielding member 150 facing away from the mounting cavity 160 are all provided with a protective layer, which can avoid surface corrosion caused by contact with the growth atmosphere and improve the service life. Preferably, the protective layer in this embodiment is tantalum carbide.

[0065] In another embodiment, in order to further enhance the protective effect of the telescopic assembly 120, a flexible filler may be filled in the mounting cavity 160 so that the multiple telescopic assemblies 120 are wrapped by the flexible filler. It should be noted that the flexible filler also needs to be mainly composed of carbon, and may be graphite felt, graphite paper, etc.

[0066] It can be seen that in the growth assembly 100 provided in this embodiment, during the normal growth of the silicon carbide crystal, the multiple graphite plates 130 gather to form a growth channel 140 to guide the normal growth of the silicon carbide crystal. When the silicon carbide is cooled after the growth is completed, before the silicon carbide crystal and the graphite plates 130 are deformed, the multiple telescopic assemblies 120 drive the multiple graphite plates 130 to move away from the silicon carbide crystal and actively separate from the edge of the silicon carbide crystal, thereby avoiding the silicon carbide crystal from shrinking during the cooling process and generating large edge stress, avoiding edge dislocation, and improving the crystal quality.

[0067] Therefore, the growth assembly 100 provided in this embodiment can not only guide the growth of silicon carbide crystals, but also reduce the edge stress of silicon carbide crystals at the end of growth, thereby improving the growth quality. Benefiting from the beneficial effects of the growth assembly 100, the growth device 10 provided in this embodiment can grow silicon carbide crystals with higher quality.

[0068] The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention. For those skilled in the art, the present invention may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present invention shall be included in the protection scope of the present invention.

Claims

1. A growth assembly for reducing edge stress of silicon carbide, characterized in that: The invention comprises a graphite cylinder (110), a plurality of telescopic components (120) and a plurality of graphite plates (130), wherein the plurality of telescopic components (120) are respectively connected to the graphite cylinder (110), the plurality of graphite plates (130) are sequentially arranged circumferentially inside the graphite cylinder (110) and are connected to the plurality of telescopic components (120) in a one-to-one correspondence, and the plurality of telescopic components (120) are used to drive the plurality of graphite plates (130) to gather together to form a growth channel (140) for guiding the growth of silicon carbide crystals, and are also used to drive the plurality of graphite plates (130) to move away from the silicon carbide crystals when guiding the growth of the silicon carbide crystals.

2. The growth assembly for reducing edge stress of silicon carbide according to claim 1, characterized in that: The telescopic assembly (120) comprises a thermal expansion member (121) having a thermal expansion coefficient greater than that of graphite and silicon carbide crystals. The thermal expansion member (121) is connected to the corresponding graphite plate (130) and is used to expand under a first temperature condition to drive the graphite plate (130) to move to surround the growth channel (140), and is also used to contract under a second temperature condition to drive the graphite plate (130) to move away from the silicon carbide crystal.

3. The growth assembly for reducing edge stress of silicon carbide according to claim 2, characterized in that: The telescopic assembly (120) further comprises a graphite mounting seat (122) and a graphite push-pull rod (123); one end of the graphite mounting seat (122) is connected to the inner wall of the graphite cylinder (110), and the other end is recessed with a telescopic channel (1221); the thermal expansion element (121) is arranged in the telescopic channel (1221), and the thermal expansion element (121) is connected to the corresponding graphite plate (130) via the graphite push-pull rod (123).

4. The growth assembly for reducing edge stress of silicon carbide according to claim 1, characterized in that: Both ends of the graphite cylinder (110) are provided with graphite annular walls (111), and the two graphite annular walls (111) extend into the interior of the graphite cylinder (110). In the axial direction of the graphite cylinder (110), the plurality of graphite plates (130) are always located between the two graphite annular walls (111), and the opposite ends of any graphite plate (130) are respectively fitted with the two graphite annular walls (111).

5. The growth assembly for reducing edge stress of silicon carbide according to claim 4, characterized in that: The growth assembly (100) further comprises a plurality of graphite shielding members (150), wherein the graphite shielding members (150) are movably arranged between any two adjacent graphite plates (130), and when the plurality of graphite plates (130) are separated from each other, the two graphite annular walls (111), the plurality of graphite plates (130), the plurality of graphite shielding members (150) and the graphite cylinder (110) together form a sealed installation clamping cavity (160), and the plurality of telescopic assemblies (120) are accommodated in the installation clamping cavity (160).

6. The growth assembly for reducing edge stress of silicon carbide according to claim 5, characterized in that: Surfaces of the graphite annular wall (111), the graphite plate (130) and the graphite shielding member (150) facing away from the mounting clamp cavity (160) are all provided with a protective layer.

7. The growth assembly for reducing edge stress of silicon carbide according to claim 5, characterized in that: The installation clamp cavity (160) is filled with a flexible filler, and the plurality of telescopic components (120) are wrapped by the flexible filler.

8. The growth assembly for reducing edge stress of silicon carbide according to claim 1, characterized in that: The plurality of telescopic components (120) are evenly distributed in the circumferential direction of the graphite cylinder (110), and the plurality of telescopic components (120) respectively telescope in a plurality of diameter extension directions of the graphite cylinder (110).

9. The growth assembly for reducing edge stress of silicon carbide according to claim 1, characterized in that: In a plane perpendicular to the axis of the graphite cylinder (110), the projection of a side surface of each graphite plate (130) participating in surrounding the growth channel (140) is in an arc shape, and the growth channel (140) is in a cylindrical shape.

10. A growth device, characterized in that: The invention comprises a graphite crucible (11) and a growth assembly (100) for reducing edge stress of silicon carbide as claimed in any one of claims 1 to 9, wherein the graphite tube (110) is coaxially sleeved inside the graphite crucible (11), and the outer wall of the graphite tube (110) is in contact with and connected to the inner wall of the graphite crucible (11).

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