Chip adhesive residual stress measurement structure and method based on pressure measurement film

Abstract

The application discloses a chip bonding residual stress measuring structure and method based on a pressure measuring film, relates to the packaging technical field, and comprises a bonding stress amplification structure; a pressure measuring film is arranged above the bonding stress amplification structure, and a transparent glass pressure block is arranged on the pressure measuring film; the bonding stress amplification structure comprises a glass substrate, a silicon chip is pasted on the glass substrate through an adhesive, and a heat insulation film is arranged between the silicon chip and the pressure measuring film. The application can be widely applied to visual consideration and evaluation of distribution conditions and quantitative data of bonding residual stresses of various adhesives in different bonding interfaces, can effectively guide selection of adhesives and coating patterns of bonding residual stress sensitive integrated circuit products in a packaging process, and has guiding significance for packaging process development of residual stress sensitive integrated circuit products in an early stage.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of packaging technology, in particular to a die bonding process in an integrated circuit packaging process, and more particularly to a chip bonding residual stress measurement structure and method based on pressure measurement film. BACKGROUND

[0002] Residual stress, as one of the most common causes of degradation of the electrical performance of stress-sensitive devices such as MEMS devices and reference voltage source devices, is usually referred to as the stress remaining in the device after the external force or non-uniform temperature field is removed. This stress will eventually be transmitted to the chip along the packaging structure, causing abnormal deformation of the chip and leading to failure of the microstructure in the chip, such as adhesion, fracture, delamination, etc., thereby ultimately affecting the stability and accuracy of the electrical signal.

[0003] Currently, the residual stress measurement methods commonly used in the microelectronics field mainly include differential capacitance measurement method, X-ray diffraction method (XRD), on-chip measurement structure method and Raman spectroscopy method. The differential capacitance measurement method converts the deformation of the electronic device into a change in the capacitance parameter for indirect measurement.

[0004] The on-chip measurement structure method refers to a method of using a complex stress amplification structure to amplify the deformation of the microstructure, and then measuring the microscale by SEM or optical microscope equipment. Both of the above methods require the design and manufacture of a relatively complex microstructure at the chip scale, so the cost and cycle of manufacturing and design are relatively high, and the measurement accuracy and precision of the final residual stress are greatly affected by the manufacturing precision, i.e. the design of a complex chip-level structure itself introduces some new system errors into the measurement system.

[0005] Raman spectroscopy and X-ray diffraction method require the use of high-end precision testing instruments for characterization and measurement. For the measurement of bonding residual stress involved in daily production, although this non-destructive testing method has high measurement accuracy, it has a long testing time, which is not conducive to timely solving the problems of residual stress encountered in the production process, and the two methods cannot obtain information about the distribution of the bonding residual stress on the chip. In addition, such high-precision precision testing instruments usually have high testing costs and are not suitable for mass production circuits.

[0006] In the characterization method of bonding residual stress in the microelectronics field, a stress amplification structure is usually used to amplify the residual stress to be measured in proportion, in order to increase the detectability and accuracy of the residual stress. Therefore, it is urgent to develop a measurement structure and method that can simplify the residual stress testing process, reduce sample preparation and testing costs, shorten the testing cycle, and enhance the visualization of residual stress detection. SUMMARY

[0007] The present application aims to provide a chip bonding residual stress measurement structure and method based on pressure measurement film to overcome the constraints of the conventional integrated circuit in the prior art, such as the small size of the chip, the long test period and high cost, the small level of residual stress, and the inability to visualize the distribution of the bonding residual stress.

[0008] In order to achieve the above-mentioned purpose, the present application provides the following technical solutions:

[0009] On the one hand, the present application provides a chip bonding residual stress measurement structure based on pressure measurement film, which comprises a bonding stress amplification structure; a pressure measurement film is arranged above the bonding stress amplification structure, and a transparent glass pressure block is arranged on the pressure measurement film; the bonding stress amplification structure comprises a glass substrate, a silicon chip is pasted on the glass substrate through an adhesive, and a heat insulation film is arranged between the silicon chip and the pressure measurement film; the sandwich structure of the transparent glass pressure block at the top and the bonding stress amplification structure at the bottom is mainly used to provide the compressive stress acting on both sides of the pressure measurement film, and the heat insulation film is mainly used to effectively block the heat transfer, so as to effectively reduce the thermal stress suffered by the film during the curing process of the adhesive, thereby effectively improving the accuracy of the film measurement and the applicable range of different adhesive curing temperature curves.

[0010] Further, the size of the silicon chip is enlarged in proportion to the size of the conventional chip, and the size of the silicon chip is smaller than the size of the heat insulation film, and the size of the heat insulation film is smaller than the size of the pressure measurement film; by enlarging the size of the conventional chip in proportion, the amplification of the bonding residual stress is realized, and the problem that the conventional chip is difficult to adapt to the pressure measurement film due to the small size, small residual stress and small degree of warping caused by the residual stress is effectively solved. According to the heat transfer mode of the bottom, only when the size of the heat insulation film is greater than the size of the silicon chip, most of the heat can be wasted in the heat insulation film, and the size of the pressure measurement film is greater than the size of the heat insulation film, which is to make the bonding residual stress of the silicon chip gradually transmitted to the pressure measurement film, and fully reflect the stress state on the silicon chip.

[0011] Further, in order to transmit the bonding residual stress to the chip as much as possible through the stress transmission in the structure, so as to form a corresponding pressure on the pressure measurement film, a thinning process is performed on the silicon chip, and the thickness of the silicon chip is 1 / 5~1 / 6 of the thickness of the conventional silicon chip, which is 300-400 microns; that is, the relatively rigid conventional silicon chip can effectively exhibit strong toughness, so that the silicon chip can better reflect the bonding residual stress perpendicular to the silicon plane upward at the corners of the silicon chip when subjected to the transverse shrinkage pressure stress of the adhesive.

[0012] Further, the adhesive is any one or a combination of epoxy resin adhesive, acrylic adhesive and silicone adhesive;

[0013] Further, the transparent glass pressure block is 2g and is directly placed on the pressure measurement film because the pressure measurement film responds to the pressure value received;

[0014] In another aspect, the application also provides a method for measuring the residual stress of a chip bonding based on a pressure measurement film, which specifically comprises the following steps:

[0015] S1, pre-production of the bonding stress amplification structure: after thinning the thickness of the silicon chip, the silicon chip is pasted on the glass substrate through the adhesive, and the dispensing thickness between the silicon chip and the glass substrate is increased;

[0016] S2, measurement structure assembly: place the heat insulation film on the silicon chip, place the pressure measurement film on the heat insulation film, and place the transparent glass pressure block on the pressure measurement film;

[0017] S3, after the assembly of the measurement structure, stand for ten minutes, and observe the pressure measurement film under the microscope without discoloration, and then place the measurement structure on the high-temperature heating stage for curing process;

[0018] S4, after the adhesive is cured, read the discoloration on the pressure measurement film under the microscope, and compare it with the colorimetric card matched with the pressure measurement film to obtain the bonding residual stress value.

[0019] Further, the bonding layer thickness is increased by appropriately increasing the dispensing height, slowing down the scribe speed and reducing the suction nozzle pressure.

[0020] Further, according to the maximum bonding residual stress value, the pressure measurement film under the corresponding stress test range is selected.

[0021] Further, the maximum bonding residual stress value is confirmed according to the following formula S max :

[0022] ;

[0023] wherein, α sub is the thermal expansion coefficient of the substrate; α Si is the thermal expansion coefficient of the silicon chip; E a is the modulus of the adhesive; E sub is the modulus of the substrate; L is the length of the chip; x is the thickness of the bonding layer;T 0 is the curing temperature; T is the actual use temperature. As can be seen from the formula, the thermal expansion coefficient of the substrate and the silicon chip, and the modulus of the adhesive and the substrate are all inherent properties of the material and cannot be easily changed, while the length L of the chip and the thickness x of the adhesive layer can be adjusted by process technology, the larger the size of the silicon chip, the thicker the adhesive layer, and the corresponding adhesive residual stress (σ) S max ) is also larger.

[0024] Compared with the prior art, the present application has the following beneficial technical effects:

[0025] The present application provides a chip adhesive residual stress measurement structure based on pressure measurement film, based on the conventional die bonding process of single chip integrated circuit products, an adhesive stress amplification structure is provided, which realizes proportional amplification of the adhesive residual stress from three dimensions of chip size, thickness and adhesive thickness, and the structure can also be compatible with the use of subsequent pressure measurement film. Compared with traditional chip size and thickness, the present application realizes proportional amplification of the stress, in order to make the measured residual stress value meet the range and measurement accuracy of the pressure measurement film. The structure can also complete the visualization and simple measurement of the size and distribution of the adhesive residual stress. In addition, the materials involved in the structure are available and have actual manufacturability.

[0026] The present application also provides a chip adhesive residual stress measurement method based on pressure measurement film. Through this non-destructive, simple and visual test method based on pressure measurement film, the distribution of the adhesive residual stress can be directly observed from the top of the structure by an optical microscope, and the value of the residual stress can be read out by comparing the color card. The simple measurement method can be widely used for various chip adhesives, and can also be applied to the evaluation of the adhesive curing temperature curve in the aspect of adhesive residual stress. The present application effectively solves the problems of high cost, long cycle and inability to measure stress distribution of chip adhesive residual stress measurement, and effectively solves the problem that conventional chips are difficult to adapt to pressure measurement film due to small size, small residual stress and small chip warping degree caused by residual stress.

[0027] Specifically, the present application can be widely used for visual consideration and evaluation of the distribution and quantitative data of the adhesive residual stress of various adhesives in different adhesive interfaces, can effectively guide the selection of adhesives and coating patterns of adhesive residual stress sensitive integrated circuit products in the packaging process, and has guiding significance for the early packaging process development of residual stress sensitive integrated circuit products (such as reference voltage source devices, high-precision MEMS devices, etc.). It is also helpful to evaluate the electronic packaging process technology ability from the perspective of residual stress, guide the improvement and optimization of technology, and provide important theoretical support for in-depth understanding of the bonding mechanism and circuit failure mechanism. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] Figure 1 Schematic diagram of a chip bonding residual stress measurement structure based on a pressure measurement film according to an embodiment of the present invention.

[0029] Figure 2 Schematic diagram of the residual stress measurement structure test principle in an embodiment of the present invention.

[0030] Figure 3 Schematic diagram illustrating the use of the pressure measurement film in an embodiment of the present invention.

[0031] In the figure, 1. Glass substrate; 2. Pressure measurement film; 3. Transparent glass block; 4. Silicon chip; 5. Thermal insulation film. DETAILED DESCRIPTION

[0032] In order to enable those skilled in the art to better understand the solutions of the present invention, the technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the embodiments described are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without making creative efforts should fall within the scope of protection of the present invention.

[0033] It should be noted that the terms "first", "second", etc. in the description and claims of the present invention and the above-mentioned drawings are used to distinguish similar objects and are not necessarily used to describe a specific order or sequence. It should be understood that the numbers used in this way can be interchanged where appropriate, so that the embodiments of the present invention described herein can be implemented in an order other than those illustrated or described herein. In addition, the terms "including" and "having" and any variations thereof are intended to cover non-exclusive inclusions. For example, a process, method, system, product or device that includes a series of steps or units is not necessarily limited to those steps or units clearly listed, but may include other steps or units that are not clearly listed or inherent to these processes, methods, products or devices.

[0034] Example 1

[0035] See Figure 1The application provides a chip bonding residual stress measurement structure based on a pressure measurement film, mainly comprising a bonding stress amplification structure, a pressure measurement film 2 and a transparent glass pressure block 3, which are stacked longitudinally, wherein the pressure measurement film 2 is arranged above the bonding stress amplification structure, and the transparent glass pressure block 3 is arranged on the pressure measurement film 2; the bonding stress amplification structure comprises a glass substrate 1, and a silicon chip 4 is pasted on the glass substrate 1 by an adhesive, and a heat insulation film 5 is arranged between the silicon chip 4 and the pressure measurement film 2; the silicon chip 4 proportionally amplifies the size of a conventional chip, realizes amplification of bonding residual stress, and the size of the silicon chip 4 is smaller than that of the heat insulation film 5, and the size of the heat insulation film 5 is smaller than that of the pressure measurement film 2; according to a heat transfer mode of the bottom, only when the size of the heat insulation film 5 is greater than that of the silicon chip 4, most of the heat can be wasted in the heat insulation film, and the size of the pressure measurement film 2 is greater than that of the heat insulation film 5, which is to make the bonding residual stress of the silicon chip 4 be transmitted to the pressure measurement film 2 step by step, and fully reflect the stress state of the silicon chip 4; because the pressure measurement film 2 reflects the pressure value, the transparent glass pressure block 3 with a weight of only 2g is directly placed on the pressure measurement film 2; the adhesive is any one or a combination of at least two of an epoxy resin adhesive, an acrylic adhesive and a silicone adhesive.

[0036] The bonding stress amplification structure is a visual structure, which has the amplification effect of bonding residual stress, that is, compared with a chip with a conventional size and thickness, the stress is proportionally amplified, so that the visual simple measurement of the size and distribution of the bonding residual stress can be realized while the residual stress value meets the range and measurement accuracy of the pressure measurement film 2.

[0037] The design principle of the adhesive stress amplification structure is mainly to provide compressive stress acting on both sides of the pressure measurement film 2 by the sandwich structure of the top transparent glass pressure block 3 and the bottom adhesive stress amplification structure. The top transparent glass pressure block 3 mainly has the following two functions: (1) providing a pressure environment perpendicular to the surface for the pressure measurement film 2 by its own gravity; (2) because the pressure measurement film 2 will change color in real time in response to the maximum pressure value it receives, the transparent glass is selected as the top pressure block, which is more convenient for observing the real-time color change of the pressure measurement film 2 during the curing process. The adhesive stress amplification structure utilizes the color change characteristic of the pressure measurement film when it is subjected to extrusion pressure, and the vertical downward pressure provided by the top glass pressure block 3, while the adhesive residual stress will generate vertical upward stress at the corners of the silicon chip 4, thereby causing the silicon chip 4 to warp, and because the downward pressure value is much smaller than the adhesive residual stress value, the pressure value reflected on the pressure measurement film 2 is the adhesive residual stress value.

[0038] The thickness of the silicon chip 4 is very important. If the silicon chip 4 is too thick, the adhesive stress will not cause the silicon chip 4 to warp, and the color change on the stress measurement film 2 will not occur. Within the capacity range, the silicon chip 4 is thinned to the thinnest, and the thickness of the silicon chip 4 is 1 / 5~1 / 6 of the conventional silicon chip thickness of 300-400 microns, which can effectively make the relatively rigid conventional silicon chip exhibit strong toughness, thereby being more conducive to the silicon chip 4 to reflect the vertical upward adhesive residual stress at the corners of the silicon chip 4 when it is subjected to the lateral shrinkage pressure stress of the pressure measurement film 2.

[0039] The pressure measurement film 2 adopts a single-piece type pressure measurement film, which is a commonly used and simple pressure measurement and pressure distribution film on the market, and is widely used in engineering, machinery and other fields due to its advantages of simple measurement method, low price, high precision and the like. When the pressure measurement film is subjected to pressure within a certain size range, the color change of the film can be identified by naked eye to read the pressure distribution and the maximum pressure value in the area at that moment. The pressure measurement films on the market are mainly divided into two types: double-piece type and single-piece type. The main difference between the two is in the measurement method and pressure measurement range. The pressure measurement range of the double-piece type is ultra-micro pressure (5LW) 0.006MPa~ medium pressure (MW) 50MPa, and the upper and lower films need to be pasted together before measuring the pressure, and the color will develop after being subjected to pressure. The pressure measurement range of the single-piece type is: medium pressure (MS) 10MPa~50 MPa, high pressure (HS): 50MPa~130 MPa, and ultra-high pressure (HHW) 130MPa~300 MPa, and it only needs a single piece to complete the measurement. Therefore, before selecting the pressure measurement film, the relevant literature data should be consulted in combination with the mathematical relationship of the stress amplification structure, and the actual residual stress value range to be measured is estimated by simulation, and finally the selection of the pressure measurement film is guided according to the estimated bonding residual stress range.

[0040] In addition, the main manufacturer of pressure-sensitive paper on the market is Fuji Company of Japan, and among the types of pressure measurement films of the company, only one product can be applied to pressure measurement at high temperature, but the pressure measurement range is in the ultra-low pressure area (0.5~2.5MPa). In order to keep consistent with the actual bonding conditions of the chip, the measurement of the bonding residual stress needs to be carried out at high temperature in the present application, so the conventional pressure measurement film will be affected by high temperature, resulting in abnormal color change and reduced accuracy of the measurement result. Therefore, it is understood that there is a soft film material for heat insulation on the market-heat insulation film 5, which is mainly composed of polyamide and has a low thermal conductivity (0.25W·m -1 ·k -1 ), so it can effectively block the transfer of heat to a certain extent. Based on the characteristics of the material, it is placed between the stress amplification structure and the pressure measurement film 2, which can effectively reduce the thermal stress of the pressure measurement film 2 during the curing process of the adhesive, thereby effectively improving the accuracy of the pressure measurement film 2 and the applicable range of different adhesive curing temperature curves.

[0041] Example 2

[0042] Reference Figure 2, the embodiment of the present application residual stress measurement structure test principle diagram, because the pressure measuring film 2 reaction is the pressure value, the transparent glass pressure block 3 acts on the pressure measuring film 2 when the pressure P 0As shown in formula 2:

[0043] (2)

[0044] On this basis, after the curing of the adhesive, the four corners of the silicon chip 4 will generate a vertical to the plane of the silicon chip 4 upward residual stress P t And through the structure simulation and reference material shows that, usually the case of bonding residual stress is about 10 1 ~10 2 MPa order of magnitude. Compared to the size of the bonding residual stress, the vertical downward pressure value provided by the transparent glass pressure block 3 can be ignored, at this time the total pressure of the pressure measuring film 2 is the vertical plane upward bonding residual stress value, that is, the bonding residual stress value P t - P 0≈ P t , that is, the pressure value read by the color of the pressure measuring film 2 is the bonding residual stress value.

[0045] The chip bonding residual stress measurement method based on the pressure measuring film, specifically includes the following steps:

[0046] S1, the pre-production of the bonding stress amplification structure: the thickness of the size of 25*25mm silicon chip 4 is reduced to 1 / 5~1 / 6 of the conventional chip thickness by the full-automatic thinning and slicing machine, then the silicon chip 4 is pasted on the glass substrate 1 by the adhesive through the full-automatic die bonding machine, and the point height is increased, the scribing speed is reduced and the suction nozzle pressure is reduced to effectively increase the point thickness;

[0047] S2, measurement structure assembly: first, according to the maximum bonding residual stress value calculated by the structure simulation result and formula (1) of the bonding residual stress, determine to purchase the single type pressure measuring film under the corresponding stress test range, the size of the silicon chip 4 is 25*25mm, the pressure measuring film 2 is cut into 29*29mm size; the heat insulation film 5 is cut into 28*28mm size, the heat insulation film 5 is placed on the silicon chip 4, the pressure measuring film 2 is placed on the heat insulation film 5, and the transparent glass pressure block 3 is placed on the pressure measuring film 2,

[0048] S3, after the measurement structure is assembled, standing for ten minutes, and observing the pressure measurement film 2 without discoloration under the microscope, the measurement structure is placed on the high-temperature heating stage for curing process; different from the oven curing used in the conventional die bonding process, the reason for choosing the heating stage is mainly to consider that under the premise of ensuring the normal heating and curing of the adhesive, the bottom heating method is more conducive to blocking the heat transfer from the bottom to the pressure measurement film 2 through the heat insulation film 5, and the influence of temperature on the accuracy of the measurement result is maximally blocked.

[0049] S4, after the adhesive is cured, the measurement structure is placed under the microscope to read the discoloration of the pressure measurement film 2, and compared with the colorimetric card matched with the pressure measurement film 2, the adhesive residual stress value is obtained.

[0050] The formula (1) is ; wherein, α sub is the thermal expansion coefficient of the substrate; α Si is the thermal expansion coefficient of the silicon chip; E a is the modulus of the adhesive; E sub is the modulus of the substrate; L is the length of the chip; x is the thickness of the adhesive layer; T 0 is the curing temperature; T is the actual use temperature. As can be seen from the formula, the thermal expansion coefficients of the substrate and the silicon chip, the modulus of the adhesive and the substrate are all inherent properties of the material and cannot be easily changed, and the length L of the chip and the thickness x of the adhesive layer can be adjusted by process technology. The larger the size of the silicon chip, the thicker the adhesive layer, and the corresponding adhesive residual stress ( S max ) is also larger.

[0051] Referring to Figure 3 , it is a use instruction schematic diagram of the pressure measurement film in the embodiment of the application. First, according to the use environment temperature and humidity of the pressure measurement film 2, the type of color-temperature curve suitable for the environment (for example, curve A) is determined, then the color change of the pressure measurement film 2 is compared with the colorimetric card, the value above the color is read, and the pressure value corresponding to the horizontal coordinate on the color-temperature A curve is read, which is the adhesive residual stress value.

[0052] The purpose of the present invention is to make up for the lack of simple characterization methods for chip adhesive residual stress in the field of microelectronics, and propose a chip-scale visual residual stress characterization method with bonding residual stress amplification effect and pressure measurement film, which avoids the constraints of factors such as small chip size, long test cycle and high cost, and small residual stress magnitude on bonding residual stress characterization in conventional integrated circuits, solves the previous problem that the distribution of bonding residual stress cannot be visualized, and can be applied to the visual characterization of residual stress size and distribution of various online adhesive products through this systematic visual bonding residual stress characterization method, supplementing the assessment method of adhesive curing temperature curve from the perspective of residual stress and the visual analysis means of the actual distribution of bonding residual stress in the chip manufacturing process.

[0053] The above shows and describes the basic principles and main features of the present invention and the advantages of the present invention. It is obvious to those skilled in the art that the present invention is not limited to the details of the above exemplary embodiments, and that the present invention can be implemented in other specific forms without departing from the spirit or essential characteristics of the present invention. Therefore, from all points of view, the embodiments should be regarded as illustrative and non-restrictive. The scope of the present invention is defined by the appended claims rather than the above description, and it is intended that all changes that fall within the meaning and range of equivalents of the claims are included in the present invention. Any reference signs in the claims should not be construed as limiting the claim to which they relate.

[0054] In addition, it should be understood that although this specification describes the embodiments, not every embodiment contains only one independent technical solution. This description is for clarity only. Those skilled in the art should consider the specification as a whole. The technical solutions in each embodiment can also be appropriately combined to form other embodiments that can be understood by those skilled in the art. The above content is only for the purpose of illustrating the technical concept of the present invention and cannot be used to limit the scope of protection of the present invention. Any changes made based on the technical solution in accordance with the technical concept proposed by the present invention fall within the scope of protection of the claims of the present invention.

Claims

1. A structure for measuring residual stress of die bonding based on a pressure measuring film, characterized in that: It comprises a bonding stress amplification structure; a pressure measuring film (2) is arranged above the bonding stress amplification structure, and a transparent glass pressing block (3) is arranged on the pressure measuring film (2); the bonding stress amplification structure comprises a glass substrate (1), a silicon chip (4) is adhered to the glass substrate (1) via an adhesive, and a heat insulation film (5) is arranged between the silicon chip (4) and the pressure measuring film (2); The silicon chip (4) is a size proportionally enlarged conventional chip, and the size of the silicon chip (4) is smaller than the size of the thermal insulation film (5), and the size of the thermal insulation film (5) is smaller than the size of the pressure measurement film (2); The thickness of the silicon chip (4) is 1 / 5 to 1 / 6 of the thickness of a conventional silicon chip, which is 300 to 400 microns.

2. The chip bonding residual stress measurement structure based on the pressure measurement film according to claim 1, characterized in that: The adhesive is any one of an epoxy resin adhesive, an acrylic adhesive and a silicone adhesive, or a combination of at least two of them.

3. The chip bonding residual stress measurement structure based on the pressure measurement film according to claim 1, characterized in that: The transparent glass compact (3) weighs 2 g.

4. The chip bonding residual stress measurement structure based on the pressure measurement film according to claim 1, characterized in that: The pressure measuring film (2) is a single-piece pressure measuring film.

5. The method for measuring chip bonding residual stress based on a pressure measurement film according to any one of claims 1 to 4, wherein: The following steps are involved: S1, prefabrication of the bonding stress amplification structure: after thinning the thickness of the silicon chip (4), the silicon chip (4) is adhered to the glass substrate (1) through an adhesive, and the thickness of the adhesive between the silicon chip (4) and the glass substrate (1) is increased; S2, assembling the measuring structure: placing a heat-insulating film (5) on the silicon chip (4), placing a pressure measuring film (2) on the heat-insulating film (5), and placing a transparent glass pressing block (3) on the pressure measuring film (2); S3, after the measuring structure is assembled, it is left to stand for ten minutes and after observing the pressure measuring film (2) under a microscope to see if there is no discoloration, the measuring structure is placed on a high-temperature heating stage for a curing process; S4, after the adhesive is cured, the measuring structure is placed under a microscope to read the color change on the pressure measuring film (2), and compared with the color card adapted for the pressure measuring film (2) to obtain the bonding residual stress value.

6. The method for measuring chip bonding residual stress based on a pressure measurement film according to claim 5, characterized in that: Increase the thickness of the bonding layer by appropriately increasing the dispensing height, slowing down the marking speed, and reducing the pressure under the nozzle.

7. The method for measuring chip bonding residual stress based on a pressure measurement film according to claim 5, characterized in that: According to the maximum bonding residual stress value, the pressure measurement film (2) within the corresponding stress test range is selected.

8. The method for measuring chip bonding residual stress based on a pressure measurement film according to claim 7, characterized in that: Determine the maximum bonding residual stress value according to the following formula S max : （1）； in, α sub is the thermal expansion coefficient of the substrate; α Si is the thermal expansion coefficient of the silicon chip; E a is the modulus of the adhesive; E sub is the modulus of the substrate; L is the chip length; x is the thickness of the bonding layer; T 0 is the curing temperature; T is the actual operating temperature.

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