A Deposition Method for MOCVD Equipment Based on Digital Twin Model

Abstract

The present invention discloses a deposition method for MOCVD equipment based on a digital twin model, comprising the following steps: Step 1: establishing a digital twin geometric model of the MOCVD equipment based on the structure and dimensional conditions of the actual MOCVD equipment; Step 2: constructing a simulated digital twin model; Step 3: numerically simulating the digital twin geometric model using CFD within the process parameter data range to obtain flow state data corresponding to different process parameters and the simulated growth rate under the flow state; Step 4: correcting the simulated growth rate; Step 5: obtaining laminar and turbulent state diagrams under different process parameters and forming a visual industrial control platform; Step 6: depositing the product in the MOCVD equipment. The present invention constructs a digital twin of the MOCVD cavity stability and establishes an intuitive and interactive visualization platform. Using digital models and experiments, it jointly guides the design and optimization of high-quality epitaxial materials, providing a theoretical basis for the development of high-quality, high-efficiency, and high-reliability thin film epitaxial technology and high-end oxide semiconductor MOCVD equipment.

Description

Technical Field

[0001] The present invention relates to the technical field of MOCVD equipment deposition, and specifically to a MOCVD equipment deposition method based on a digital twin model. Background Art

[0002] Digital twins are gaining popularity, frequently appearing in speeches at major conferences and forums, and attracting widespread attention both within and outside the industry. In 2015, General Electric implemented real-time monitoring, inspection, and maintenance of its engines based on digital twins. Gartner has listed digital twins as one of its top ten strategic technology trends for three consecutive years.

[0003] The emergence of digital twin technology will greatly promote equipment development and material design. Digital twins leverage data from physical models, sensor updates, and operational history, integrating multidisciplinary, multi-physics, multi-scale, and multi-probability simulation processes to map physical equipment in a virtual space, reflecting the entire lifecycle of the corresponding physical equipment. Digital twins are a universally applicable theoretical and technical system widely used in military, medical, and manufacturing fields. Their goal is to accurately map physical information in the real world and present it to managers for decision-making.

[0004] Therefore, the research on the chamber stability of the MOCVD multi-process parameter coupling mechanism based on digital twin technology will reveal the fluid state inside the MOCVD chamber and explore the relationship between the gas transport process in the reaction chamber under the coupling of multiple fields (flow field, temperature field, chemical field, component concentration field, etc.) generated under multiple process parameters (inlet flow, chamber pressure, susceptor speed, substrate temperature, etc.) to solve the problems of deposition rate, thin film uniformity and so on in epitaxial growth.

[0005] At present, there is a lack of research on the coupling mechanism of MOCVD multi-process parameters based on digital twin technology in the market. Summary of the Invention

[0006] In order to overcome the problems mentioned in the background technology, the present invention provides a MOCVD equipment deposition method based on a digital twin model.

[0007] In order to achieve the above technical objectives, the technical solution adopted by the present invention is:

[0008] A MOCVD equipment deposition method based on a digital twin model includes the following steps:

[0009] Step 1: Based on the structure and size conditions of the actual MOCVD equipment, a digital twin geometric model of the MOCVD equipment is established, and the digital twin geometric model of the MOCVD equipment is discretized into a grid;

[0010] Step 2: Obtain multiple different process parameter data collected by the industrial parameter sensors of the MOCVD equipment, input the process parameter data into the CFD computational fluid dynamics software, and use them as the numerical simulation boundary conditions of the digital twin geometric model to build a simulated digital twin model;

[0011] Step 3: Using the process parameter data range, CFD performs numerical simulation on the digital twin geometry model to obtain the flow state data corresponding to different process parameters and the simulated growth rate under the flow state;

[0012] Step 4: Based on actual experiments, the actual growth rate of the MOCVD equipment under different process parameters is obtained, and the actual growth rate is compared with the simulated growth rate to correct the simulated growth rate;

[0013] Step 5: Analyze the flow state data obtained in step 3 to obtain laminar and turbulent flow state diagrams under different process parameters, and then determine the stability process parameter value range of the MOCVD equipment in the laminar flow state and the corrected simulated growth rate corresponding to the stability process parameter value range, and form a visual industrial control platform;

[0014] Step 6: Select the stability process parameters corresponding to the actual deposition requirements on the visual industrial control platform and deposit the product in the MOCVD equipment.

[0015] To optimize the above technical solutions, specific measures taken also include:

[0016] In step 1, a 3D geometric model identical to the actual model is established using the 3D software PROE. This 3D geometric model is the digital twin geometric model of the MOCVD equipment.

[0017] In step 2, the process parameter data collected by the industrial parameter sensor of the MOCVD equipment include: the temperature T of the substrate base of the MOCVD equipment, the pressure P of the vacuum chamber, the base rotation speed ω, the gas flow rate Q of the metal organic source and the oxygen source, the gas inlet temperature, the gas outlet inner wall temperature and the outer wall temperature.

[0018] In step three, the method for numerically simulating the digital twin geometric model based on CFD is as follows: input the temperature T of the substrate base of the MOCVD equipment, the pressure P of the vacuum chamber, the base rotation speed ω, the gas flow rate Q of the metal organic source and oxygen source, the gas inlet temperature, the inner wall temperature of the gas outlet, and the outer wall temperature into the CFD, the gravitational acceleration adopts g=9.8m / s2, the inlet adopts the velocity inlet, and the outlet is set as the pressure outlet. Set CFD to use the SIMPLE algorithm to solve the differential equation. CFD outputs the flow state data and the simulated growth rate under this flow state.

[0019] In step three, when CFD performs numerical simulation on the digital twin geometric model, the simulation conditions are simplified so that the actual growth rate obtained in step four is different from the simulated growth rate.

[0020] The simplified simulation conditions are as follows:

[0021] 1) Assume that the gas is an ideal gas with continuity and is treated as incompressible;

[0022] 2) Ignore gas thermal radiation;

[0023] 3) The base temperature is considered to be fixed, and the outer wall surface can be considered to be isothermal or adiabatic;

[0024] 4) Ignoring the energy loss caused by the relative motion between the walls and the gas, all walls in contact with the fluid and the reaction chamber adopt no-slip boundary conditions.

[0025] In step five, the laminar flow is: the fluids between the flow layers do not mix with each other, and the turbulent flow is: the fluid particles move in the form of a random pulsation. The fluid particles between the flow layers mix and collide with each other, causing the movement elements of the fluid to pulsate randomly.

[0026] The present invention has the following beneficial effects:

[0027] The present invention constructs a digital twin of the MOCVD cavity stability and establishes an intuitive and interactive visualization platform. Digital models and experiments are used to jointly guide the design and optimization of high-quality epitaxial materials, providing a theoretical basis for the research and development of high-quality, high-efficiency and high-reliability thin-film epitaxial technology and high-end oxide semiconductor MOCVD equipment. BRIEF DESCRIPTION OF THE DRAWINGS

[0028] Figure 1 is a schematic diagram of an MOCVD apparatus of the present invention;

[0029] Figure 2 It is a schematic diagram of the digital twin geometric model of the MOCVD equipment;

[0030] Figure 3 It is a diagram of laminar flow and turbulent flow states under different processes and conditions. DETAILED DESCRIPTION

[0031] In order to make the purpose, technical solutions and advantages of this application more clearly understood, the present application is described and illustrated below in conjunction with the accompanying drawings and examples. It should be understood that the specific embodiments described herein are merely used to explain this application and are not intended to limit this application. Based on the embodiments provided in this application, all other embodiments obtained by those of ordinary skill in the art without making any creative efforts are within the scope of protection of this application.

[0032] Obviously, the drawings described below are merely examples or embodiments of the present application. Those skilled in the art can, without inventive effort, apply the present application to other similar scenarios based on these drawings. Furthermore, it is also understood that, although the effort involved in such a development process may be complex and lengthy, for those skilled in the art related to the content disclosed in this application, changes in design, manufacturing, or production based on the technical content disclosed in this application are merely conventional technical means and should not be construed as an insufficiency of the content disclosed in this application.

[0033] References to "embodiments" in this application mean that a particular feature, structure, or characteristic described in connection with the embodiment may be included in at least one embodiment of the application. The appearance of this phrase in various places in the specification does not necessarily refer to the same embodiment, nor does it refer to independent or alternative embodiments that are mutually exclusive of other embodiments. It is understood, both explicitly and implicitly, by those skilled in the art that the embodiments described in this application may be combined with other embodiments unless there is a conflict.

[0034] Unless otherwise defined, technical or scientific terms used herein shall have the ordinary meaning as understood by persons of ordinary skill in the art to which this application belongs. The terms "a," "an," "an," "the," and similar expressions used herein do not denote limitations on quantity and may refer to either the singular or the plural. The terms "comprise," "include," "have," and any variations thereof, used herein, are intended to cover non-exclusive inclusions. For example, a process, method, system, product, or apparatus comprising a series of steps or elements (units) is not limited to the listed steps or elements but may also include steps or elements not listed, or may include other steps or elements inherent to the process, method, product, or apparatus. The terms "connected," "connected," "coupled," and similar expressions used herein are not limited to physical or mechanical connections but may include electrical connections, whether direct or indirect. The terms "plurality" and "several" used herein refer to two or more. "And / or" describes an association between associated objects, indicating that three possible relationships exist. For example, "A and / or B" may mean: A exists alone; A and B exist simultaneously; or B exists alone. The character " / " generally indicates that the objects before and after are in an "or" relationship. The terms "first", "second", "third", etc. involved in this application are only used to distinguish similar objects and do not represent a specific order for the objects.

[0035] A MOCVD equipment deposition method based on a digital twin model includes the following steps:

[0036] Step 1: According to the structure and size conditions of the actual MOCVD equipment, such as Figure 1 As shown in the figure, a digital twin geometric model similar to the MOCVD equipment is established through the 3D software PROE, as shown in the figure. Figure 2 As shown, the digital twin geometric model of the MOCVD equipment is discretized into a grid;

[0037] Step 2: Use sensors inside the MOCVD chamber (specifically, flow sensors, temperature sensors, pressure sensors, and speed sensors, corresponding to the four MOCVD parameters: the temperature T of the MOCVD substrate pedestal, the pressure P of the vacuum chamber, the pedestal speed ω, and the gas flow Q of the metal organic source and oxygen source) to transmit data to the MOCVD digital twin model. Serial communication acts as a data extraction and integration module, serving as the infrastructure connecting the physical world and cyberspace. The data is transmitted to the server, providing real-time data for the CFD computational fluid dynamics software for simulation calculations. At the same time, the gas inlet temperature, gas outlet inner wall temperature, and outer wall temperature are input into the CFD computational fluid dynamics software. The range of these data is set, and the CFD computational fluid dynamics software constructs a simulation digital twin model.

[0038] Step 3: Using the aforementioned process parameter data range, CFD performs numerical simulations on the digital twin geometry model. From the perspective of equation solving and considering the actual flow conditions within the reaction chamber, it is necessary to simplify the physical model. We make the following assumptions:

[0039] 1) Assume that the gas is an ideal gas with continuity and is treated as incompressible;

[0040] 2) Ignore gas thermal radiation;

[0041] 3) The base temperature is considered to be fixed, and the outer wall surface can be considered to be isothermal or adiabatic;

[0042] 4) Ignoring the energy loss caused by the relative motion between the walls and the gas, all walls in contact with the fluid and the reaction chamber adopt no-slip boundary conditions.

[0043] Inputs to the CFD process are the temperature T of the substrate pedestal of the MOCVD equipment, the pressure P of the vacuum chamber, the pedestal rotation speed ω, the gas flow rates Q of the metal organic source and oxygen source, the gas inlet temperature, the inner wall temperature of the gas outlet, and the outer wall temperature. The gravitational acceleration is g=9.8m / s2, the inlet is a velocity inlet, and the outlet is set as a pressure outlet. The CFD is set to use the SIMPLE algorithm to solve the differential equations. The CFD outputs the flow state data corresponding to different process parameters, as well as the simulated growth rate under this flow state.

[0044] Step 4: Based on actual experiments, the actual growth rate of the MOCVD equipment under different process parameters is obtained, and the actual growth rate is compared with the simulated growth rate to correct the simulated growth rate; the correction method is to replace the simulated growth rate with the actual growth rate.

[0045] Step 5: Analyze the flow state data obtained in step 3 to obtain laminar and turbulent state diagrams under different process parameters, and then determine the stability process parameter value range of the MOCVD equipment in the laminar state and the corrected simulated growth rate corresponding to the stability process parameter value range, and form a visual industrial control platform; Figure 3 As shown, this is a flow state diagram when all other parameters are consistent except the pressure P of the vacuum chamber and the base rotation speed ω. The area represented by the red × is the turbulent area, the green circle area is the laminar area, and the critical point between the two is the blue line. In this flow state diagram, four points A, B, C, and D are selected. The visualization model of these four points is Figure 3 As shown in Figure 2, the four visualization models show that A and C represent turbulent flow states, while B and D represent laminar flow states. In Figure 2, the airflow on the susceptor is flat across the surface, resulting in a uniform deposition layer thickness. In Figure 2, the airflow on the susceptor is wavy. This is because the centrifugal force generated by the high-speed rotation of the susceptor creates large vortices within the chamber, resulting in an uneven deposition layer thickness. However, Figures 2 and 3 are not suitable for substrate deposition due to their turbulent flow.

[0046] Step 6: Select the stability process parameters corresponding to the actual deposition requirements on the visual industrial control platform and deposit the product in the MOCVD equipment.

[0047] Obviously, those skilled in the art may make various changes and modifications to this application without departing from the spirit and scope of this application. Thus, if these modifications and variations of this application fall within the scope of the claims of this application and their equivalents, this application is intended to include these modifications and variations.

Claims

1. A MOCVD equipment deposition method based on a digital twin model, characterized by: The following steps are involved: Step 1: Based on the structure and size conditions of the actual MOCVD equipment, a digital twin geometric model of the MOCVD equipment is established, and the digital twin geometric model of the MOCVD equipment is discretized into a grid; Step 2: Obtain multiple different process parameter data collected by the industrial parameter sensors of the MOCVD equipment, input the process parameter data into the CFD computational fluid dynamics software, and use them as the numerical simulation boundary conditions of the digital twin geometric model to build a simulated digital twin model; Step 3: Using the process parameter data range, CFD performs numerical simulation on the digital twin geometry model to obtain the flow state data corresponding to different process parameters and the simulated growth rate under the flow state; Step 4: Based on actual experiments, the actual growth rate of the MOCVD equipment under different process parameters is obtained, and the actual growth rate is compared with the simulated growth rate to correct the simulated growth rate; Step 5: Analyze the flow state data obtained in step 3 to obtain laminar and turbulent flow state diagrams under different process parameters, and then determine the stability process parameter value range of the MOCVD equipment in the laminar flow state and the corrected simulated growth rate corresponding to the stability process parameter value range, and form a visual industrial control platform; Step 6: Select the stability process parameters corresponding to the actual deposition requirements on the visual industrial control platform and deposit the product in the MOCVD equipment; In step 3, when CFD performs numerical simulation on the digital twin geometric model, the simulation conditions are simplified so that the actual growth rate obtained in step 4 is different from the simulated growth rate; The simplified simulation conditions are as follows: 1) Assume that the gas is an ideal gas with continuity and is treated as incompressible; 2) Ignore gas thermal radiation; 3) The base temperature is considered to be fixed, and the outer wall surface can be considered to be isothermal or adiabatic; 4) Ignoring the energy loss caused by the relative motion between the walls and the gas, all walls in contact with the fluid and the reaction chamber adopt no-slip boundary conditions.

2. The MOCVD equipment deposition method based on a digital twin model according to claim 1, characterized in that: In step 1, a 3D geometric model identical to the actual model is established using the 3D software PROE. This 3D geometric model is the digital twin geometric model of the MOCVD equipment.

3. The MOCVD equipment deposition method based on a digital twin model according to claim 1, characterized in that: In step 2, the process parameter data collected by the industrial parameter sensor of the MOCVD equipment include: the temperature T of the substrate base of the MOCVD equipment, the pressure P of the vacuum chamber, the base rotation speed ω, the gas flow rate Q of the metal organic source and the oxygen source, the gas inlet temperature, the gas outlet inner wall temperature and the outer wall temperature.

4. The MOCVD equipment deposition method based on a digital twin model according to claim 3 is characterized by: In step three, the method for numerically simulating the digital twin geometric model based on CFD is as follows: input the temperature T of the substrate base of the MOCVD equipment, the pressure P of the vacuum chamber, the base rotation speed ω, the gas flow rate Q of the metal organic source and oxygen source, the gas inlet temperature, the inner wall temperature of the gas outlet, and the outer wall temperature into the CFD, the gravitational acceleration adopts g=9.8m / s2, the inlet adopts the velocity inlet, and the outlet is set as the pressure outlet. Set CFD to use the SIMPLE algorithm to solve the differential equation. CFD outputs the flow state data and the simulated growth rate under this flow state.

5. The MOCVD equipment deposition method based on a digital twin model according to claim 1, characterized in that: In step five, the laminar flow is: the fluids between the flow layers do not mix with each other, and the turbulent flow is: the fluid particles move in the form of a random pulsation. The fluid particles between the flow layers mix and collide with each other, causing the movement elements of the fluid to pulsate randomly.

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