Gas distributor, plasma processing apparatus and gas switching operation method

Abstract

The invention provides a gas distributor, a plasma processing device and a gas switching operation method, belongs to the technical field of plasma processing equipment, and aims to solve the problem of equipment damage caused by pipeline discharge in the gas distributor. The radio frequency source is electrically connected with the gas spraying head; a plasma outlet of the remote plasma source is communicated with a gas outlet of the gas spraying head through a gas conveying pipeline, and different process treatment states are switched by moving the moving plug in the gas conveying pipeline, so that in the plasma treatment process, the requirements of different processes on plasma types are met, and the plasma treatment efficiency is improved. And the gas is prevented from being excited into plasma in the gas conveying pipeline to damage equipment.

Description

Technical Field

[0001] The present invention relates to the technical field of plasma processing equipment, and in particular to the technical field of a gas distributor, a plasma processing device and a gas switching operation method. Background Art

[0002] Micromachining of semiconductor substrates or substrates is a well-known technology that can be used to manufacture, for example, semiconductors, flat panel displays, light emitting diodes (LEDs), solar cells, etc. An important step in micromachining manufacturing is the plasma treatment process step, which is performed inside a reaction chamber into which a process gas is input. A radio frequency source is inductively and / or capacitively coupled to the inside of the reaction chamber to excite the process gas to form and maintain a plasma. Inside the reaction chamber, the exposed substrate surface is subjected to an etching or deposition process by the generated plasma, thereby forming a desired film layer or morphology on the substrate surface.

[0003] In the deposition or etching process using plasma, it mainly includes plasma enhanced chemical vapor deposition (PECVD), plasma enhanced atomic layer deposition (PEALD), pre-cleaning of epitaxial deposition, etc. This type of process usually requires the integration of a remote plasma source (RPS) and in-situ plasma on the same semiconductor device to quickly switch the RPS state and in-situplasma state according to different process steps.

[0004] In the prior art, in the RPS state, the pipe through which the remote plasma source inputs plasma into the reaction chamber needs to maintain an inner diameter as large as possible to reduce the loss of plasma output by the remote plasma source in the pipe. However, when the structure is in the in-situ plasma state, the gas in the pipe with an excessively large inner diameter is easily excited by the RF source to form a parasitic plasma, which damages the inner wall of the pipe, generates particle pollution, increases the cost of manual maintenance, and even affects the process results.

[0005] Therefore, a technical solution is urgently needed to resolve the conflicting requirements for pipelines in the RPS state and the in-situ plasma state. Summary of the invention

[0006] The technical problem solved by the present invention is to provide a gas distributor, a plasma processing device and a gas switching operation method to solve the conflicting requirements on pipelines in the RPS state and the in-situ plasma state.

[0007] In order to solve the above technical problems, the present invention provides a gas distributor for introducing reaction gas into a reaction chamber, comprising:

[0008] A gas shower head, one side of which has a plurality of gas outlets connected to the reaction chamber, and the other side of which is connected to the gas source;

[0009] A remote plasma source, whose plasma outlet is connected to the gas outlet of the gas shower head through a gas pipeline, and the plasma output by the remote plasma source enters the gas shower head through a path, and

[0010] The mobile plug can move between a blocking state and a clearing state. The blocking state is that the mobile plug moves into the gas pipeline so that it is located in the path, and the clearing state is that the mobile plug is detached from the gas pipeline so that the mobile plug is away from the path.

[0011] Optionally, a cavity is provided inside the gas shower head, the cavity is communicated with a gas outlet of the gas shower head, the gas source is communicated with the cavity, and the gas pipeline is communicated with the cavity.

[0012] Optionally, it further includes: a receiving channel, the receiving channel is connected to the gas pipeline, and when the movable plug is switched to the unblocking state, it is located in the receiving channel.

[0013] Optionally, it also includes: a power component, which is connected to one end of the movable plug and is used to move the movable plug in the receiving channel and the gas pipeline.

[0014] Optionally, the power assembly comprises:

[0015] A retractable bellows, one end of which is fixedly connected to the receiving channel, and the other end of which is fixedly connected to the power plate;

[0016] A connecting rod, which is located inside the bellows, one end of which is fixedly connected to the power plate, and the other end of which is fixedly connected to the moving plug;

[0017] The motor drives the power plate to extend and retract through a transmission mechanism.

[0018] Optionally, the storage channel is arranged vertically or horizontally.

[0019] Optionally, the gas delivery pipeline includes a section of dielectric pipeline, and the movable plug moves to the dielectric pipeline position when in the blocking state.

[0020] Optionally, the gas pipeline, except for the dielectric pipeline, is made of metal.

[0021] Optionally, the gas source is connected to the gas pipeline.

[0022] Optionally, a multi-porous gas path is provided on the movable plug so that gas can pass through the movable plug; when the movable plug is switched to the blocking state, the movable plug is located between the outlet of the gas source and the gas shower head.

[0023] Optionally, the pore size of the porous air path is 0.1 mm-50 mm.

[0024] Optionally, the inner diameter of the gas pipeline is 10mm-100mm.

[0025] Optionally, a radio frequency source is electrically connected to the gas shower head through a matcher, and is used to excite the reaction gas in the reaction chamber into plasma.

[0026] Optionally, the matcher is electrically connected to an upper surface of the gas shower head.

[0027] Optionally, one end of the gas pipeline is electrically connected to the gas shower head, and the matcher is electrically connected to the gas pipeline between the dielectric pipeline and the gas shower head.

[0028] Optionally, the movable plug is attached to a switching plate, and a movable port is provided on the switching plate. In the blocking state, the movable port is connected to the upper and lower sides of the gas pipeline, and in the unblocking state, the movable port is located in the receiving channel.

[0029] Optionally, the movable plug and the movable port may move in a linear or circumferential direction.

[0030] Furthermore, the present invention also provides a plasma processing device, comprising:

[0031] Reaction chamber;

[0032] A gas distributor as in any of the above items, located on the upper side of the reaction chamber;

[0033] A base, which is arranged at the lower side of the reaction chamber opposite to the gas distributor;

[0034] The vacuum pump is connected to the opening of the lower side wall of the reaction chamber.

[0035] Optionally, a power assembly is included, comprising:

[0036] A retractable component, which maintains airtightness with the gas pipeline and can be retracted along the moving direction of the movable plug;

[0037] A motor, which can drive the retractable component to move;

[0038] A connecting rod is located inside the telescopic component and has one end that moves with the telescopic component and the other end that is fixedly connected to the movable plug.

[0039] Optionally, the motor is fixedly connected to the outer wall of the reaction chamber or the outer wall of the gas pipeline.

[0040] Furthermore, the present invention also provides a gas switching operation method for reducing parasitic plasma, using any of the above-mentioned gas distributors, comprising the following steps:

[0041] Switching the movable plug to a blocking state, opening the gas source to allow the reaction gas to pass;

[0042] Turn on the radio frequency source to generate plasma in the reaction chamber;

[0043] The movable plug is switched to a clear state, and the remote plasma source is turned on to allow the plasma of the remote plasma source to enter the reaction chamber.

[0044] One of the above technical solutions has at least one of the following advantages or beneficial effects: the gas distributor arranged on the reaction chamber can introduce the reaction gas into the reaction chamber to generate in-situ plasma in the reaction chamber for deposition or etching process, and can be switched to a remote plasma source to output active particles for cleaning or process treatment. When the gas distributor is in the in-situ plasma state, the movable plug is in a blocking state and enters the gas pipeline, thereby reducing or avoiding the discharge damage caused by the parasitic plasma generated in the remote plasma gas pipeline. When the gas distributor is in the remote plasma state, the movable plug is in a clearing state and leaves the gas pipeline, so that the gas pipeline has enough space for the active particles. particles pass through; in addition, the in-situ plasma gas source can share a gas pipeline with the remote plasma source. At the same time, a multi-hole gas path is opened on the movable plug for the in-situ plasma gas source to pass through. Under the premise of minimizing the use of gas pipelines, the in-situ plasma gas source can enter the reaction chamber and reduce or avoid parasitic plasma in the gas pipeline; finally, a section of the gas pipeline is made of dielectric material, and the radio frequency signal and the remote plasma source are located at both ends of the dielectric material gas pipeline section to avoid the radio frequency signal from damaging the remote plasma source through the gas pipeline. When the movable plug is in the blocking state, its stop position is at the dielectric pipeline, which greatly reduces the probability of parasitic plasma generation at this position. BRIEF DESCRIPTION OF THE DRAWINGS

[0045] In order to more clearly illustrate the embodiments of the present invention or the technical solutions in the prior art, the drawings required for use in the embodiments or the description of the prior art will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present invention. For ordinary technicians in this field, other drawings can be obtained based on these drawings without paying creative work.

[0046] Figure 1A schematic structural diagram showing a capacitively coupled plasma processing device in a cleared state using the gas distributor of the present invention;

[0047] Figure 2 A schematic structural diagram showing a capacitively coupled plasma processing device in a blocking state using the gas distributor of the present invention;

[0048] Figure 3 A schematic diagram of a movable plug structure according to an embodiment is shown;

[0049] Figure 4 A schematic structural diagram of a capacitively coupled plasma processing device using a gas distributor according to another embodiment of the present invention is shown;

[0050] Figure 5 A schematic diagram of a capacitively coupled plasma processing device using a gas distributor of another embodiment is shown;

[0051] Figure 6 Show Figure 5 Schematic diagram of different states of the mobile plug;

[0052] Figure 7 A schematic diagram of a capacitively coupled plasma processing device using a gas distributor of another embodiment;

[0053] Figure 8 Show Figure 7 Schematic diagram of different states of the mobile plug. DETAILED DESCRIPTION

[0054] In order to make the purpose, technical solution and advantages of the embodiments of the present invention clearer, the technical solution in the embodiments of the present invention will be clearly and completely described below in conjunction with the drawings in the embodiments of the present invention. Obviously, the described embodiments are part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.

[0055] The gas distributor of the present invention comprises a gas shower head for introducing reaction gas into a reaction chamber; a radio frequency source for igniting the gas in the reaction chamber; a remote plasma source for providing active particles into the reaction chamber, wherein the plasma outlet of the remote plasma source is connected with the gas outlet of the gas shower head through a gas pipeline; and a movable plug, which can be moved into the gas pipeline in a blocking state to fill the internal space of the gas pipeline, reduce the space available for gas flow, and thereby reduce or avoid the generation of parasitic plasma in the gas pipeline when the radio frequency source is started. The movable plug can also be moved away from the gas pipeline in a clearing state to keep the gas pipeline unobstructed again, which is beneficial for the active particles to enter the reaction chamber through the gas pipeline when the remote plasma source is turned on.

[0056] Figure 1 The present invention is a schematic structural diagram of a capacitively coupled plasma processing device in a cleared state using the gas distributor of the present invention, including a gas shower head 110, one side of which has multiple gas outlets connected to the reaction chamber, and the other side is connected to the gas source. The gas shower head 110 can be located above the interior of the reaction chamber 100, and its gas outlet faces the interior of the reaction chamber 100. In order to evenly distribute the reaction gas in the chamber, the gas outlet can be a plurality of evenly arranged gas holes arranged on the lower surface of the gas shower head 110. The gas source can be a gas source for providing in-situ plasma reaction gas, which can be input to the gas shower head 110 through a pipeline for uniform gas treatment and then enter the interior of the reaction chamber 100. The gas source can provide a variety of reaction gases, which are specifically determined according to process conditions.

[0057] The gas distributor also includes a radio frequency source 130, which is used to excite the reaction gas in the reaction chamber into plasma. In this embodiment, according to the principle of capacitively coupled plasma, the radio frequency source 130 is connected to the matcher 132 through a radio frequency cable 131, and the matcher 132 is electrically connected to the gas shower head 110 through a radio frequency rod 133. The gas shower head 110 can be made of metal. After the radio frequency source 130 inputs radio frequency energy into the gas shower head 110, it cooperates with the base 101 in the reaction chamber 100 to form an in-situ plasma 104 in the space between the two. In some other embodiments, the radio frequency source 130 can also use a coil and use the principle of inductively coupled plasma to feed radio frequency energy into the reaction chamber to form an in-situ plasma 104. The radio frequency source 130 can be located outside the reaction chamber 100 and fixedly installed on the shell, or it can be fixedly installed above the gas shower head 110 in other ways.

[0058] The gas distributor also includes a remote plasma source 140, whose plasma outlet is connected to the gas outlet of the gas shower head 110 through a gas pipeline 150, so that the active particles output by the remote plasma source 140 can enter the reaction chamber 100 after being homogenized by the gas shower head 110 to perform the process. The remote plasma source 140 can have an inlet pipe 141, and the gas required to generate remote plasma enters the remote plasma source 140 through the inlet pipe 141, and is excited to generate plasma inside the remote plasma source 140. After a certain filtration, the required active particles enter the gas shower head 110 through the gas pipeline 150. The gas pipeline 150 can be made of metal and has a fixed shape. The inner diameter thereof is 10mm-100mm, which is sufficient for the active particles to pass through. One end of the gas pipeline 150 can be connected to the central area on the upper side of the gas shower head 110 to obtain a better uniform diffusion effect.

[0059] In some embodiments, the gas shower head 110 has a cavity 111, the lower side of the cavity 111 is connected to the gas outlet of the gas shower head 110, and the upper side is connected to the gas pipeline 150. At the same time, the gas source for the in-situ plasma is also connected to the cavity 11. The cavity 111 is conducive to the radial diffusion of gas or active particles, so that the active particles of the in-situ plasma and the remote plasma can more uniformly process the substrate 103. The RF rod 133 can be connected to the lower end of the gas pipeline 150, or directly connected to the upper side of the gas shower head 110 to realize the feeding of RF energy.

[0060] In order to avoid the generation of parasitic plasma when switching between different plasma states, a movable plug 160 is provided in the gas distributor, which can move between the blocking state and the unblocking state. The outer diameter of the movable plug 160 is slightly smaller than the inner diameter of the gas pipeline 150. Figure 1 In the unblocked state shown, the movable plug 160 is separated from the gas pipeline 150, so that the movable plug 160 is away from the path of the plasma output by the remote plasma source 140 entering the gas shower head 110. In this embodiment, the path is the space inside the gas pipeline 150. The movable plug 160 is in the unblocked state, and the corresponding process step is the remote plasma state. The active particles can be transmitted downward through the gas pipeline 150 without obstacles, and the loss caused by the collision of active particles with equipment components during the transmission process is minimized, so that the active particles that reach the substrate surface to play a processing role can maintain the required concentration. Figure 2 The figure shows a schematic diagram of the structure of a capacitively coupled plasma processing device in a blocking state using the gas distributor of the present invention. The process step corresponding to the movable plug 160 being in the blocking state is the in-situ plasma state. The radio frequency energy is coupled to the plasma 104 above the base 101. Through the close interaction between the plasma 104 and the substrate 103, the material on the surface of the substrate 103 is removed. At this time, the radio frequency energy will also be coupled to the gas inside the gas pipeline 150. Under the process conditions, the gas at this position also has a certain probability of being excited to form a parasitic plasma to damage the equipment, or forming pollutants and then falling on the surface of the substrate 103 through the gas outlet of the gas shower head 110 to cause product defects. Therefore, in the in-situ plasma state, the movable plug 160 is moved to the gas pipeline 150 so that it is located in the path where the plasma output by the remote plasma source 140 enters the gas shower head 110. In this embodiment, the path is the internal space of the gas pipeline 150 itself.

[0061] According to the Paschen curve, under the gas pressure of the present embodiment, the smaller the distance between two points, the higher the required discharge voltage. In the gas distributor of the present invention, the distance between two points refers to the distance between two solid surfaces in the gas pipeline 150. When the movable plug 160 is in a clearing state, the two points are respectively located on the inner surface of the gas pipeline 150. When the movable plug 160 is in a blocking state, that is, entering into the gas pipeline 150, the two points are respectively located on the inner wall of the gas pipeline 150 and the outer wall of the movable plug 160. That is, when the movable plug 160 is in a blocking state, the distance between the two points where discharge may occur in the gas pipeline 150 is shortened. That is, at this time, the threshold voltage at which the gas in the gas pipeline 150 is excited into a parasitic plasma is increased. When the threshold voltage is controlled to be above the voltage generated by the RF source 130 in the gas pipeline 150, the generation of parasitic plasma in the gas pipeline 150 can be avoided.

[0062] In some embodiments, Figure 1-2 As shown, the gas distributor also has a receiving channel 151 fixedly connected to the gas pipeline 150. When the movable plug 160 is in a cleared state, the receiving channel 151 provides a retreat space for the movable plug 160. In order to move the movable plug 160, the power assembly 170 is fixedly connected to one end of the movable plug 160. In the present embodiment, the power assembly 170 specifically includes: a retractable bellows 171, one end of which is fixedly connected to the storage channel 151, and the other end is fixedly connected to the power plate 172. The bellows 171 can maintain air tightness when the power assembly drives the movable plug 160 to move; a connecting rod 173, which is located on the inner side of the bellows 171, one end of the connecting rod 173 is fixedly connected to the power plate 172, and the other end is fixedly connected to the movable plug 160. The length of the connecting rod 173 is sufficient to enable the movable plug 160 to be pushed toward the gas pipeline 150 to a blocking state, and at the same time, the amount of expansion and contraction of the bellows 171 is sufficient to enable the movable plug 160 to retreat to a clearing state, that is, the connecting rod 173 transmits the power source to the movable plug 160 by extending the length in the direction of movement; in the present embodiment, the power source is a motor 174, which can be fixed on the outer shell of the reaction chamber 100. An optional implementation is that the motor converts the rotational motion into a linear motion to cause the power plate 172 fixedly connected thereto to move, thereby driving the movable plug 160 to move.

[0063] A dielectric pipe 152 can also be set in the middle part of the gas pipeline 150, and the other parts of the gas pipeline 150 are made of metal. The function of the dielectric pipe 152 is to block the conduction path of the RF current from the gas shower head 110 to the remote plasma source 140, and protect the remote plasma source 140 from damage. When the movable plug 160 is in a blocking state, that is, the movable plug 160 is located at the position of the dielectric pipe 152, the dielectric pipe 152 is an insulating material and cannot shield the electromagnetic field. Therefore, when there is an RF voltage at both ends, a corresponding electromagnetic field will also be generated inside it, and it is easier to form parasitic plasma at this position. The movable plug 160 is used to reduce the space for gas discharge and suppress the generation of parasitic plasma inside the dielectric pipe. In this embodiment, the RF rod 133 can be electrically connected to the gas pipeline 150 between the dielectric pipe 152 and the gas shower head 110.

[0064] In some embodiments, Figure 1 As shown, the gas source of the in-situ plasma is also delivered to the cavity 111 of the gas shower head 110 through the gas delivery pipeline 150. For example, the gas source can be connected to the gas inlet pipe B120, and the gas inlet pipe 120 is connected to the upper end of the gas delivery pipeline 150. This can save the number of gas pipelines and space utilization. In this embodiment, an implementation of the movable plug 160 is as follows. Figure 3 As shown, there is a porous gas path 161 inside, and the size of the porous gas path 161 is 0.1mm-50mm, which can be flexibly selected according to the actual process conditions and equipment size. When the process needs to be in an in-situ plasma state, the movable plug 160 is in a blocking state, and the internal space of the gas pipeline 150 is divided into small-pitch spaces by the movable plug 160. The outlet of the gas source providing the reaction gas enters the gas pipeline 150 through the air inlet pipe B120 and then enters the gas shower head 110 through the porous gas path 161 on the movable plug 160. When the RF source 130 is turned on, because the size of the porous gas path 161 is small enough, parasitic plasma will not be generated in the porous gas path 161.

[0065] In the above embodiment, the movable plug 160 moves horizontally, and correspondingly, the gas pipeline 150 and the receiving channel 151 are also arranged horizontally. In some other embodiments, such as Figure 4 This is a structural schematic diagram of a capacitively coupled plasma processing device using a gas distributor of another embodiment of the present invention. The difference from the above embodiment is that the movable plug 160 can also move in the vertical direction, and correspondingly, the gas pipeline 150 and the storage channel 151 are also vertically arranged, wherein the motor 174 can be fixed on the outer wall of the gas pipeline 150, thereby reducing the tortuous shape of the pipeline and reducing the processing difficulty.

[0066] In other embodiments, different structures for driving the movable plug 160 are provided, such as Figure 5 As shown, the movable plug 160 is arranged on a switching plate 162. At the same time, the switching plate 162 is provided with a movable port 163 parallel to the movable plug 160. The radial dimension of the movable port 163 can be the same as that of the gas pipeline 150 so as not to hinder the flow of gas on the upper and lower sides of the gas transmission channel. The switching plate 162 is connected to the motor 174 through a connecting rod 173. Figure 6 As shown in state A in FIG. 1 , when in the unblocked state, the switching plate 162 moves to the left, so that the movable plug 160 is located in the receiving channel 151, and the movable port 163 is connected to the gas delivery channel, so that the remote plasma can flow in the gas delivery pipeline without obstruction; Figure 6 As shown in state B in the figure, when in the blocking state, the switching plate 162 moves to the right, so that the movable plug 160 is located in the gas transmission channel, and the reaction gas enters the reaction chamber through the porous gas path 161 in the movable plug 160.

[0067] In other embodiments, Figure 7 As shown, the difference from the above embodiment is that the motor 174 drives the connecting rod 173 to drive the switching plate 162 to rotate. Figure 8 As shown in state A in FIG. 1 , when in the unblocked state, the switching plate 162 rotates around the connecting rod 173, so that the movable plug 160 is located in the receiving channel 151, and the movable port 163 is connected to the gas delivery channel, so that the remote plasma can flow in the gas delivery pipeline without obstruction; Figure 8 As shown in state B in the figure, when in the blocking state, the switching plate 162 continues to rotate around the connecting rod 173, so that the movable plug 160 is located in the gas transmission channel, and the reaction gas enters the reaction chamber through the porous gas path 161 in the movable plug 160.

[0068] Furthermore, the present invention also discloses a plasma processing device, such as Figure 1 As shown, it has a reaction chamber 100, the side walls of the reaction chamber 100 can be made of metal, and any of the above-mentioned gas distributors is provided on the upper side of the reaction chamber, which has a gas shower head 110 for introducing processing gas into the reaction chamber 100, and a base 101 arranged on the lower side of the reaction chamber 100 opposite to the gas shower head 110, for carrying a substrate 103, and an opening 102 is provided on the lower side wall of the reaction chamber for connecting to a vacuum pump to flush away excess gas in the reaction chamber 100 and maintain the gas pressure in the reaction chamber 100.

[0069] At the same time, the present invention also discloses a gas switching operation method for reducing parasitic plasma, using any of the above-mentioned gas distributors, comprising the following steps:

[0070] When the process requires an in-situ plasma state, the movable plug 160 is switched to a blocking state, the movable plug 160 enters the gas delivery pipeline 150, and the space in the gas delivery pipeline 150 is divided into sufficiently small spaces, and the gas source is opened to introduce the reaction gas, and the reaction gas can enter the space above the substrate 103 of the reaction chamber 100 through the porous gas path 161 on the movable plug 160;

[0071] The RF source 130 is turned on to excite the reaction gas in the reaction chamber, so that an in-situ plasma is generated in the reaction chamber, and the substrate 103 is subjected to a relatively intense treatment. At this time, since the threshold voltage for generating parasitic plasma in the space in the gas pipeline 150 is large enough, and the RF voltage generated by the RF source 130 is much lower than the threshold voltage, basically no parasitic plasma is generated in the gas pipeline 150;

[0072] When the process requires a remote plasma state, the movable plug 160 is switched to a clear state, the movable plug 160 is pushed out of the gas delivery channel 150, and the remote plasma source 140 is opened, so that the active particles in the plasma generated by the remote plasma source 140 enter the space above the substrate 103 in the reaction chamber 100 to perform a gentler treatment on the substrate.

[0073] The gas distributor provided on the reaction chamber disclosed in the present invention can introduce reaction gas into the reaction chamber to generate in-situ plasma in the reaction chamber for deposition or etching process, and can be switched to a remote plasma source to output active particles for cleaning. When the gas distributor is in the in-situ plasma state, the movable plug is in a blocking state and enters the gas pipeline, thereby reducing or avoiding discharge damage caused by parasitic plasma generated in the remote plasma gas pipeline. When the gas distributor is in the remote plasma state, the movable plug is in a clearing state and leaves the gas pipeline, thereby leaving enough space for the active particles to pass through the gas pipeline. In addition, the in-situ plasma gas The source can share a gas pipeline with the remote plasma source. At the same time, a multi-hole gas path is opened on the movable plug for the in-situ plasma gas source to pass through. Under the premise of minimizing the use of gas pipelines, the in-situ plasma gas source can enter the reaction chamber and reduce or avoid parasitic plasma in the gas pipeline. Finally, a section of the gas pipeline is made of dielectric material, and the radio frequency signal and the remote plasma source are located at both ends of the dielectric material gas pipeline section to avoid the radio frequency signal from damaging the remote plasma source through the gas pipeline. When the movable plug is in the blocking state, its stop position is at the dielectric pipeline, which greatly reduces the probability of parasitic plasma generation at this position.

[0074] The gas distributor disclosed in the present invention is not limited to application in PECVD, PEALD or substrate pretreatment, but can also be used in other semiconductor equipment, which will not be described in detail here.

[0075] Although the content of the present invention has been described in detail through the above preferred embodiments, it should be appreciated that the above description should not be considered as a limitation of the present invention. After reading the above content, it will be apparent to those skilled in the art that various modifications and substitutions of the present invention will occur. Therefore, the protection scope of the present invention should be limited by the appended claims.

Claims

1. A gas distributor for introducing reaction gas into a reaction chamber, characterized in that: include: A gas shower head, one side of which has a plurality of gas outlets connected to the reaction chamber, and the other side is connected to the gas source; a remote plasma source, whose plasma outlet is connected to the gas outlet of the gas shower head through a gas pipeline, and the plasma output by the remote plasma source enters the gas shower head through a path, and The mobile plug can move between a blocking state and a clearing state. The blocking state is that the mobile plug moves into the gas pipeline so that it is located in the path, and the clearing state is that the mobile plug is detached from the gas pipeline so that the mobile plug is away from the path.

2. The gas distributor according to claim 1, characterized in that A cavity is provided inside the gas shower head, the cavity is communicated with the gas outlet of the gas shower head, the gas source is communicated with the cavity, and the gas delivery pipeline is communicated with the cavity.

3. The gas distributor according to claim 2, characterized in that Also includes: A receiving channel is connected to the gas pipeline, and when the movable plug is switched to a clearing state, it is located in the receiving channel.

4. The gas distributor according to claim 3, characterized in that Also includes: A power assembly is connected to one end of the movable plug and is used to move the movable plug in the receiving channel and the gas pipeline.

5. The gas distributor according to claim 4, characterized in that The power assembly comprises: A retractable bellows, one end of which is fixedly connected to the receiving channel and the other end of which is fixedly connected to the power plate; a connecting rod, which is located inside the bellows, one end of which is fixedly connected to the power plate and the other end of which is fixedly connected to the moving plug; The motor drives the power plate to extend and retract through a transmission mechanism.

6. The gas distributor according to claim 3, characterized in that The storage channel is arranged vertically or horizontally.

7. The gas distributor according to claim 2, characterized in that The gas transmission pipeline includes a section of dielectric pipeline, and the movable plug moves to the dielectric pipeline position when in the blocking state.

8. The gas distributor according to claim 7, characterized in that The gas pipeline is made of metal except for the dielectric pipeline.

9. The gas distributor according to claim 2, characterized in that The gas source is in communication with the gas pipeline.

10. The gas distributor according to claim 9, characterized in that The movable plug is provided with a multi-hole gas path so that gas can pass through the movable plug; when the movable plug is switched to the blocking state, the movable plug is located between the outlet of the gas source and the gas shower head.

11. The gas distributor according to claim 10, characterized in that The aperture of the porous gas path is 0.1 mm-50 mm.

12. The gas distributor according to claim 1, characterized in that The inner diameter of the gas pipeline is 10mm-100mm.

13. The gas distributor according to claim 7, characterized in that A radio frequency source is electrically connected to the gas shower head through a matcher, and is used to excite the reaction gas in the reaction chamber into plasma.

14. The gas distributor according to claim 13, characterized in that The matcher is electrically connected to an upper surface of the gas shower head.

15. The gas distributor according to claim 13, characterized in that One end of the gas pipeline is electrically connected to the gas shower head, and the matcher is electrically connected to the gas pipeline between the dielectric pipeline and the gas shower head.

16. The gas distributor according to claim 3, characterized in that The movable plug is attached to the switching plate, and a movable port is arranged on the switching plate. When in the blocking state, the movable port is connected to the upper and lower sides of the gas pipeline, and when in the unblocking state, the movable port is located in the receiving channel.

17. The gas distributor according to claim 16, characterized in that The movable plug and the movable port may move in a linear or circumferential direction.

18. A plasma processing device, characterized in that: include: Reaction chamber; The gas distributor according to any one of claims 1 to 17, located on the upper side of the reaction chamber; A base, which is arranged at the lower side of the reaction chamber opposite to the gas distributor; The vacuum pump is connected to the opening of the lower side wall of the reaction chamber.

19. The plasma processing apparatus according to claim 18, wherein: Comprising a power assembly, which includes: A retractable component, which maintains airtightness with the gas pipeline and can be retracted along the moving direction of the movable plug; A motor, which can drive the retractable component to move; A connecting rod is located inside the telescopic component and has one end that moves with the telescopic component and the other end that is fixedly connected to the movable plug.

20. The plasma processing apparatus according to claim 19, wherein: The motor is fixedly connected to the outer wall of the reaction chamber or the outer wall of the gas pipeline.

21. A gas switching operation method for reducing parasitic plasma, using a gas distributor according to any one of claims 1 to 17, comprising the following steps: Switching the movable plug to a blocking state, opening the gas source to allow the reaction gas to pass; Turn on the radio frequency source to generate plasma in the reaction chamber; The movable plug is switched to a clear state, and the remote plasma source is turned on to allow the plasma of the remote plasma source to enter the reaction chamber.

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