Ion implanter based on chip semiconductor preparation
By using the second motor to drive the splint and the first spring in the ion injection machine to increase the holding force, the problem of loosening and offset due to centrifugal force during the ion injection process is solved. The movement rate.
Patent Information
- Application Number
- CN202411525146.8
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-10-30
- Publication Date
- 2025-01-28
- Estimated Expiration
- Not applicable · inactive patent
AI Technical Summary
During the ion implantation process, the wafer is loose and offset due to the centrifugal force generated by the rotation of the target disk, causing inconvenience in processing.
Designed a chip -based semi -guided system spare ion injection machine. The wafer is fixed to the wafer through the second motor driver splint. Round loosen the bias when turning on the target disk.
The stability and fixation of different sizes of wafers, prevent loosening offset, improve the stability of clamping, shorten the maintenance time, and increase the mobility of the ion injection machine.
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Figure CN119381253A_ABST
Abstract
Description
Technical Field
[0001] The present invention relates to the technical field of semiconductor processing, in particular to an ion implanter for chip-based semiconductor preparation. Background Art
[0002] In the field of semiconductor device and integrated circuit production technology, the existing technology usually uses an ion implanter to accurately control the amount, depth and distribution of doping elements. The existing ion implanter includes an ion source system, which is used to generate a beam. Specifically, the ion source system includes a vacuum chamber, an arc chamber, a filament, a cathode cap, a filament power supply and a bias power supply.
[0003] When performing ion implantation on an existing semiconductor, a target plate is driven to rotate, so that the angle of the silicon wafer can be adjusted more accurately, so that the ions are implanted more quickly and evenly into the interior of the silicon wafer, thereby reducing the defective rate of the product and the waste of silicon wafers. However, the existing method of fixing the wafer is relatively simple, and is generally fixed by clamping. Due to the large centrifugal force generated when the target plate rotates, it will become loose, which may cause the wafer to shift and cause processing inconvenience. In view of this, an ion implanter for chip semiconductor preparation is proposed. Summary of the invention
[0004] 1. Technical issues to be resolved
[0005] In view of the deficiencies in the prior art, the present invention provides an ion implanter for chip semiconductor preparation, which solves the problem of inconvenience in ion implantation.
[0006] (II) Technical solution
[0007] In order to achieve the above-mentioned purpose of convenient ion implantation, the present invention provides the following technical solutions: an ion implanter for chip semiconductor preparation, comprising an ion implanter housing, a cabinet door is hingedly connected to the front surface of the ion implanter housing, and an ion implanter emitter is fixedly installed on the lower surface of the top plate of the ion implanter housing;
[0008] Among them, an ion implantation mechanism is arranged in the shell of the ion implantation machine, and the ion implantation mechanism includes a workbench, a first motor, a gear, a gear ring, a target plate, four slide grooves, a second motor, a disc, four first support rods, four second support rods, four sliding blocks, four fixed rods, four clamps, four first springs, four hollow columns, four second springs, four rings, four fixed columns, grooves, four pull rings, eight round holes, eight round balls, four slots, eight card holes and a protective plate.
[0009] Preferably, the workbench is fixedly installed in the inner wall of the ion implanter housing, the first motor is fixedly installed in the inner wall of the workbench, and the gear is fixedly sleeved on the outer surface of the output shaft of the first motor.
[0010] Preferably, the gear ring is meshingly connected to the outer surface of the gear, and the target plate is fixedly sleeved on the inner surface of the gear ring;
[0011] Among them, four slide grooves are arranged on the upper surface of the target plate.
[0012] Preferably, the second motor is fixedly mounted in the inner wall of the target plate, the disc is fixedly sleeved on the outer surface of the output shaft of the second motor, and the four first support rods are fixedly mounted on the outer surface of the disc;
[0013] The four second support rods are rotatably connected to the upper surfaces of the four first support rods respectively.
[0014] Preferably, the four sliding blocks are rotatably connected to the upper surfaces of the four second support rods respectively, and the four sliding blocks are slidably connected to the four sliding grooves respectively.
[0015] Preferably, the four fixing rods are respectively slidably sleeved on the inner surfaces of the four sliding blocks, and the four clamping plates are respectively fixedly mounted on the opposite ends of the four fixing rods;
[0016] The four first springs are respectively fixedly mounted on opposite sides of the four clamping plates, and the opposite ends of the four first springs are respectively fixedly mounted on opposite sides of the four sliding blocks.
[0017] Preferably, the protective plate is arranged in the inner wall of the housing of the ion implanter, and the four hollow columns are respectively fixedly sleeved on the inner surface of the horizontal plate of the protective plate.
[0018] Preferably, the four second springs are respectively fixedly mounted in the inner walls of the four hollow columns, the four rings are respectively fixedly mounted on the lower ends of the four second springs, and the four fixing columns are respectively fixedly sleeved on the inner surfaces of the four rings.
[0019] Preferably, the eight grooves are respectively opened on the outer surfaces of the four fixing columns, and the four pull rings are respectively fixedly installed on the upper surfaces of the four fixing columns.
[0020] Among them, eight round holes are respectively opened on the outer surfaces of four hollow columns, and eight round beads are respectively arranged on the inner surfaces of the eight round holes.
[0021] Preferably, the four slots are respectively opened on the upper surface of the bottom plate of the ion implanter housing, and the eight clamping holes are respectively opened on the inner surfaces of the four slots.
[0022] (III) Beneficial effects
[0023] Compared with the prior art, the present invention provides an ion implanter for chip semiconductor preparation, which has the following beneficial effects:
[0024] 1. The ion implanter for chip semiconductor preparation can clamp and fix the wafer by driving the clamping plate through the second motor. In this way, wafers of different sizes can be fixed. The first spring can be set to apply a greater clamping force to the surface of the clamping plate to fix the wafer. When the device is used, the fastening component and the clamping component are matched to prevent the wafer from loosening and deviating when rotating on the target plate, thereby further improving the stability of the clamping.
[0025] 2. The ion implanter for chip semiconductor preparation can install the protective plate by means of a snap-on connection, which can realize the rapid installation of the protective plate, greatly shorten the maintenance time, improve the utilization rate of the ion implanter, and also greatly reduce the maintenance difficulty of the ion implanter.
[0026] 3. The ion implanter for chip semiconductor preparation uses a protective plate to shield the inner wall of the ion implanter process chamber, allowing ions originally attached to the chamber wall to attach to the protective plate. When the ion implanter is repaired and maintained, the protective plate of the process chamber can be replaced, which can greatly shorten the maintenance time and improve the utilization rate of the ion implanter. At the same time, it also greatly reduces the difficulty of maintenance of the ion implanter. BRIEF DESCRIPTION OF THE DRAWINGS
[0027] Figure 1 This is a schematic diagram of the structure of an ion implanter for chip semiconductor preparation according to the present invention;
[0028] Figure 2 It is a schematic diagram of the internal structure of the housing of the ion implanter of the present invention;
[0029] Figure 3 Schematic diagram of the internal structure of the ion implanter housing of the present invention
[0030] Figure 4 It is a schematic diagram of the internal structure of the housing of the ion implanter of the present invention;
[0031] Figure 5 For the present invention Figure 4 A magnified view of the structure at center;
[0032] Figure 6 It is a schematic diagram of the internal structure of the housing of the ion implanter of the present invention;
[0033] Figure 7 For the present invention Figure 6 Enlarged view of the structure at point B in the middle.
[0034] In the figure: 1. ion implanter housing; 2. cabinet door; 3. ion implanter emitter; 4. workbench; 5. first motor; 6. gear; 7. gear ring; 8. target plate; 9. slide groove; 10. second motor; 11. disc; 12. first support rod; 13. second support rod; 14. sliding block; 15. fixing rod; 16. clamping plate; 17. first spring; 18. hollow column; 19. second spring; 20. ring; 21. fixing column; 22. groove; 23. pull ring; 24. round hole; 25. round ball; 26. slot; 27. clamping hole; 28. protective plate. DETAILED DESCRIPTION
[0035] The following will be combined with the drawings in the embodiments of the present invention to clearly and completely describe the technical solutions in the embodiments of the present invention. Obviously, the described embodiments are only part of the embodiments of the present invention, not all of the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present invention.
[0036] See also Figure 1-7 The present invention provides a new technical solution: an ion implanter for chip semiconductor preparation, comprising an ion implanter housing 1, a cabinet door 2 is hinged on the front surface of the ion implanter housing 1, and an ion implanter emitter 3 is fixedly installed on the lower surface of the top plate of the ion implanter housing 1;
[0037] Among them, an ion implantation mechanism is arranged in the ion implantation machine housing 1, and the ion implantation mechanism includes a workbench 4, a first motor 5, a gear 6, a gear ring 7, a target plate 8, four slide grooves 9, a second motor 10, a disc 11, four first support rods 12, four second support rods 13, four sliding blocks 14, four fixed rods 15, four clamping plates 16, four first springs 17, four hollow columns 18, four second springs 19, four rings 20, four fixed columns 21, grooves 22, four pull rings 23, eight round holes 24, eight round balls 25, four slots 26, eight card holes 27 and a protective plate 28.
[0038] Furthermore, the workbench 4 is fixedly installed in the inner wall of the ion implanter housing 1 , the first motor 5 is fixedly installed in the inner wall of the workbench 4 , and the gear 6 is fixedly sleeved on the outer surface of the output shaft of the first motor 5 .
[0039] Furthermore, the gear ring 7 is meshedly connected to the outer surface of the gear 6, and the target plate 8 is fixedly sleeved on the inner surface of the gear ring 7;
[0040] Among them, four slide grooves 9 are opened on the upper surface of the target plate 8 .
[0041] Furthermore, the second motor 10 is fixedly mounted in the inner wall of the target plate 8, the disc 11 is fixedly sleeved on the outer surface of the output shaft of the second motor 10, and the four first support rods 12 are fixedly mounted on the outer surface of the disc 11;
[0042] The four second support rods 13 are rotatably connected to the upper surfaces of the four first support rods 12 respectively.
[0043] Furthermore, the four sliding blocks 14 are rotatably connected to the upper surfaces of the four second support rods 13 , respectively, and the four sliding blocks 14 are slidably connected to the four sliding grooves 9 , respectively.
[0044] Furthermore, four fixed rods 15 are slidably mounted on the inner surfaces of the four sliding blocks 14, and four clamping plates 16 are fixedly mounted on the opposite ends of the four fixed rods 15;
[0045] The four first springs 17 are respectively fixedly mounted on opposite surfaces of the four clamping plates 16 , and the opposite ends of the four first springs 17 are respectively fixedly mounted on opposite surfaces of the four sliding blocks 14 .
[0046] Furthermore, the protection plate 28 is disposed in the inner wall of the ion implanter housing 1 , and the four hollow columns 18 are respectively fixedly sleeved on the inner surface of the horizontal plate of the protection plate 28 .
[0047] Furthermore, the four second springs 19 are respectively fixedly installed in the inner walls of the four hollow columns 18 , the four rings 20 are respectively fixedly installed at the lower ends of the four second springs 19 , and the four fixing columns 21 are respectively fixedly sleeved on the inner surfaces of the four rings 20 .
[0048] Furthermore, eight grooves 22 are respectively formed on the outer surfaces of the four fixing columns 21 , and four pull rings 23 are respectively fixedly mounted on the upper surfaces of the four fixing columns 21 .
[0049] The eight circular holes 24 are respectively opened on the outer surfaces of the four hollow columns 18 , and the eight round balls 25 are respectively arranged on the inner surfaces of the eight circular holes 24 .
[0050] Furthermore, four slots 26 are respectively provided on the upper surface of the bottom plate of the ion implanter housing 1, and eight clamping holes 27 are respectively provided on the inner surfaces of the four slots 26;
[0051] When the ion implanter for chip semiconductor preparation is used, a wafer is placed on the upper surface of a target plate 8, and then the second motor 10 is started. The second motor 10 outputs power to a disk 11 fixedly mounted on the outer surface of the output shaft through operation, so that the disk 11 rotates. The disk 11 drives four first support rods 12 fixedly mounted on the outer surface to rotate in a circle. The four first support rods 12 pull four second support rods 13 connected to the upper surface for rotation to move toward the opposite surface. The four second support rods 13 pull four sliding blocks 14 connected to the upper surface for rotation to move toward the opposite surface in the inner walls of the four slide grooves 9. At this time, four clamping plates 16 contact the outer surface of the wafer, and the clamping plates 16 exert force on the fixed rods 15 fixedly mounted on the rear surface. Adding a thrust on the opposite side makes it slide toward the opposite side in the inner wall of the sliding block 14. While moving, the four clamping plates 16 exert pressure on the four first springs 17. At this time, the elastic potential energy of the four first springs 17 expands. The four first springs 17 apply a thrust on the opposite side to the four clamping plates 16, so that the clamping plates 16 clamp the wafer more tightly. At this time, the ion implantation machine launcher 3 can be started to implant ions into the wafer, and the first motor 5 can be started. The first motor 5 outputs power to the gear 6 fixedly mounted on the outer surface of the output shaft through operation, so that it rotates. The gear 6 drives the gear ring 7 meshing on the outer surface to rotate, and the gear ring 7 drives the target plate 8 fixedly mounted on the inner surface to rotate. At this time, The target plate 8 drives the wafer to rotate, so that the ion implantation is more uniform. When installing the protective plate 28, by pulling the pull ring 23, the pull ring 23 drives the lower surface fixed on the fixed column 21 to move upward, and the fixed column 21 drives the ring 20 fixed on the outer surface to move upward. The ring 20 applies pressure to the second spring 19 fixed on the upper surface to cause it to shrink. At this time, the two grooves 22 on the outer surface of the fixed column 21 are aligned with the two circular holes 24 on the outer surface of the hollow column 18. At this time, the round balls 25 arranged in the two circular holes 24 are no longer subjected to the pressure applied by the fixed column 21. At this time, the round balls 25 are retracted into the hollow column 18. At this time, by plugging the hollow column 18 into the bottom of the ion implantation machine housing 1 In the slot 26 opened on the upper surface of the plate, no tension is applied to the pull ring 23 at this time, and the second spring 19 is no longer under force. At this time, the second spring 19 expands, and the second spring 19 applies a downward thrust to the circular ring 20 fixedly installed at the lower end. At this time, the circular ring 20 drives the fixing column 21 fixedly installed on the inner surface to move downward. At this time, the fixing column 21 hits the two round balls 25 and applies a thrust on the opposite side to the two round balls 25, so that they protrude from the hollow column 18 and are clamped into the clamping hole 27 opened on the inner wall of the slot 26 for fixing. At this time, the installation is completed. When it is necessary to disassemble the protective plate 28, the clamping fixation of the protective plate 28 can be released by pulling the pull ring 23, and the protective plate 28 can be pulled upward to complete the disassembly;
[0052] The ion implanter for semiconductor preparation based on chips can drive the clamping plate 16 to clamp and fix the wafer by the second motor 10. In this way, wafers of different sizes can be fixed, and a larger clamping force can be applied to the surface of the clamping plate 16 to fix the wafer by the setting of the first spring 17. When the device is used, the fastening component cooperates with the clamping component to prevent the wafer from loosening and deviating when rotating on the target plate 8, thereby further improving the stability of the clamping. The ion implanter for semiconductor preparation based on chips can install the protective plate 28 by pulling it in a clamping manner, so that the protective plate 28 can be quickly installed, which can greatly shorten the maintenance time, improve the utilization rate of the ion implanter, and also greatly reduce the maintenance difficulty of the ion implanter. The protective plate is used to shield the inner wall of the process chamber of the ion implanter, so that the ions originally attached to the chamber wall are attached to the protective plate. When the ion implanter is repaired and maintained, the protective plate of the process chamber can be replaced, which can greatly shorten the maintenance time, improve the utilization rate of the ion implanter, and also greatly reduce the maintenance difficulty of the ion implanter.
[0053] Working principle: When the ion implanter for chip semiconductor preparation is used, the wafer is placed on the upper surface of the target plate 8, and the second motor 10 is started. The second motor 10 outputs power to the disk 11 fixedly mounted on the outer surface of the output shaft through operation, so that it rotates. The disk 11 drives the four first support rods 12 fixedly mounted on the outer surface to rotate in a circle. The four first support rods 12 pull the four second support rods 13 connected to the upper surface to move toward the opposite surface. The four second support rods 13 pull the four sliding blocks 14 connected to the upper surface to move toward the opposite surface in the inner walls of the four slide grooves 9. At this time, the four clamps 16 contact the outer surface of the wafer, and the clamps 16 are fixed to the fixed rods fixed to the rear surface. 15 applies a thrust on the opposite side to make it slide toward the opposite side in the inner wall of the sliding block 14. While moving, the four clamping plates 16 apply pressure to the four first springs 17. At this time, the elastic potential energy of the four first springs 17 expands. The four first springs 17 apply a thrust on the opposite side to the four clamping plates 16, so that the clamping plates 16 clamp the wafer more tightly. At this time, the ion implantation machine launcher 3 can be started to implant ions into the wafer, and the first motor 5 can be started. The first motor 5 outputs power to the gear 6 fixedly mounted on the outer surface of the output shaft through operation, so that it rotates. The gear 6 drives the gear ring 7 meshing on the outer surface to rotate, and the gear ring 7 drives the target plate 8 fixedly mounted on the inner surface to rotate. At this time, the target plate 8 drives the wafer to rotate, so that the ion implantation is more uniform. When installing the protective plate 28, by pulling the pull ring 23, the pull ring 23 drives the lower surface fixed on the fixed column 21 to move upward, and the fixed column 21 drives the ring 20 fixed on the outer surface to move upward. The ring 20 applies pressure to the second spring 19 fixed on the upper surface to cause it to shrink. At this time, the two grooves 22 on the outer surface of the fixed column 21 are aligned with the two circular holes 24 on the outer surface of the hollow column 18. At this time, the round balls 25 set in the two circular holes 24 are no longer subject to the pressure applied by the fixed column 21. At this time, the round balls 25 are retracted into the hollow column 18. At this time, by plugging the hollow column 18 into the ion implantation machine housing 1 In the slot 26 opened on the upper surface of the bottom plate, no pulling force is applied to the pull ring 23 at this time, and the second spring 19 is no longer under force. At this time, the second spring 19 expands, and the second spring 19 applies a downward thrust to the circular ring 20 fixedly installed at the lower end. At this time, the circular ring 20 drives the fixed column 21 fixedly installed on the inner surface to move downward. At this time, the fixed column 21 hits the two balls 25 and applies an opposite thrust to the two balls 25, so that they protrude from the hollow column 18 and are clamped into the clamping hole 27 opened on the inner wall of the slot 26 for fixation. At this time, the installation is completed. When the protective plate 28 needs to be disassembled, the clamping fixation of the protective plate 28 can be released by pulling the pull ring 23, and the disassembly can be completed by pulling the protective plate 28 upward.
[0054] Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that various changes, modifications, substitutions and variations may be made to the embodiments without departing from the principles and spirit of the present invention, and that the scope of the present invention is defined by the appended claims and their equivalents.
Claims
1. An ion implanter for chip-based semiconductor preparation, comprising an ion implanter housing (1), a cabinet door (2) being hingedly connected to the front surface of the ion implanter housing (1), characterized in that: An ion implanter emitter (3) is fixedly mounted on the lower surface of the top plate of the ion implanter housing (1); An ion implantation mechanism is arranged in an ion implantation machine housing (1), and the ion implantation mechanism comprises a workbench (4), a first motor (5), a gear (6), a gear ring (7), a target plate (8), four slide grooves (9), a second motor (10), a disc (11), four first support rods (12), four second support rods (13), four sliding blocks (14), four fixed rods (15), four clamping plates (16), four first springs (17), four hollow columns (18), four second springs (19), four circular rings (20), four fixed columns (21), a groove (22), four pull rings (23), eight circular holes (24), eight round balls (25), four slots (26), eight clamping holes (27) and a protective plate (28).
2. The ion implanter for chip semiconductor preparation according to claim 1, characterized in that: The workbench (4) is fixedly mounted in the inner wall of the ion implanter housing (1), the first motor (5) is fixedly mounted in the inner wall of the workbench (4), and the gear (6) is fixedly sleeved on the outer surface of the output shaft of the first motor (5).
3. The ion implanter for chip semiconductor manufacturing according to claim 1, characterized in that: The gear ring (7) is meshingly connected to the outer surface of the gear (6), and the target plate (8) is fixedly sleeved on the inner surface of the gear ring (7); Among them, four slide grooves (9) are arranged on the upper surface of the target plate (8).
4. The ion implanter for chip semiconductor manufacturing according to claim 1, characterized in that: The second motor (10) is fixedly mounted in the inner wall of the target plate (8), the disc (11) is fixedly sleeved on the outer surface of the output shaft of the second motor (10), and the four first support rods (12) are fixedly mounted on the outer surface of the disc (11); The four second support rods (13) are rotatably connected to the upper surfaces of the four first support rods (12) respectively.
5. The ion implanter for chip semiconductor manufacturing according to claim 1, characterized in that: The four sliding blocks (14) are rotatably connected to the upper surfaces of the four second support rods (13), and the four sliding blocks (14) are slidably connected to the four sliding grooves (9).
6. The ion implanter for chip semiconductor manufacturing according to claim 1, characterized in that: The four fixed rods (15) are respectively slidably sleeved on the inner surfaces of the four sliding blocks (14), and the four clamping plates (16) are respectively fixedly installed on the opposite ends of the four fixed rods (15); The four first springs (17) are respectively fixedly mounted on opposite surfaces of the four clamping plates (16), and the opposite ends of the four first springs (17) are respectively fixedly mounted on opposite surfaces of the four sliding blocks (14).
7. The ion implanter for chip semiconductor manufacturing according to claim 1, characterized in that: The protective plate (28) is arranged in the inner wall of the ion implanter housing (1), and the four hollow columns (18) are respectively fixedly sleeved on the inner surface of the horizontal plate of the protective plate (28).
8. The ion implanter for chip semiconductor manufacturing according to claim 1, characterized in that: The four second springs (19) are respectively fixedly mounted on the inner walls of the four hollow columns (18), the four circular rings (20) are respectively fixedly mounted on the lower ends of the four second springs (19), and the four fixing columns (21) are respectively fixedly sleeved on the inner surfaces of the four circular rings (20).
9. The ion implanter for chip semiconductor manufacturing according to claim 1, characterized in that: The eight grooves (22) are respectively formed on the outer surfaces of the four fixing columns (21), and the four pull rings (23) are respectively fixedly mounted on the upper surfaces of the four fixing columns (21). Among them, eight circular holes (24) are respectively opened on the outer surfaces of the four hollow columns (18), and eight round beads (25) are respectively arranged on the inner surfaces of the eight circular holes (24).
10. The ion implanter for chip semiconductor manufacturing according to claim 1, characterized in that: The four slots (26) are respectively arranged on the upper surface of the bottom plate of the ion implanter housing (1), and the eight clamping holes (27) are respectively arranged on the inner surfaces of the four slots (26).