Heating assembly of heat treatment equipment
By changing the structure and distribution arrays of the heating light group in the thermal treatment equipment, the combination of strip lights and circular lights is used to form a temperature supplement area, which solves the problem of poor thermal power of the substrate edge. , Increase the consistency of temperature and membrane thickness.
Patent Information
- Application Number
- CN202411376572.X
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2024-09-29
- Publication Date
- 2025-01-28
AI Technical Summary
In existing heat treatment equipment, the arrangement of the heating lamp groups leads to poor thermal power adjustability at the edge of the substrate, resulting in large temperature gradient on the wafer surface and obvious temperature difference, which affects the temperature consistency of the silicon wafer surface and the consistency of film forming thickness.
By changing the structure and distribution arrays of the heating light group, the combination of multiple strip lights and circular lights is adopted to form a heating area to optimize the thermal power adjustability of the edge of the substrate. Specific measures include setting up a second heating light between the first heating lights to form a temperature supplement area, covering the boundary or edge part of the wafer, and setting the heating area according to the low -temperature zone.
Effectively reduce the temperature gradient of the wafer surface, reduce the temperature inconsistent temperature caused by thermal superposition, diffusion, and thermal offset, and improve the consistency of the surface temperature of the silicon wafer surface and the consistency of the thickness of the film.
Smart Images
Figure CN119381293A_ABST
Abstract
Description
Technical Field
[0001] The present disclosure relates to the field of semiconductor processing technology, and in particular to a heating component of a heat treatment equipment. Background Art
[0002] In the chamber of the heat treatment equipment, the heating lamps are used to heat the substrate, which is placed above the rotating mechanism and rotates with it to achieve uniform heating. The arrangement of the heating lamps has a great influence on the thermal uniformity of the substrate. Summary of the invention
[0003] The embodiments of the present disclosure provide a heating assembly for heat treatment equipment to solve or alleviate one or more technical problems in the prior art.
[0004] As one aspect of an embodiment of the present disclosure, an embodiment of the present disclosure provides a heating assembly for a heat treatment device, comprising:
[0005] first heating lamps, wherein a plurality of first heating lamps are arranged in parallel, and a first gap is provided between two adjacent first heating lamps;
[0006] second heating lamps, wherein a plurality of second heating lamps are disposed in the first gap, and light emitted by the second heating lamps passes through the first gap to heat the wafer;
[0007] Wherein, the first heating lamp is a strip lamp, and the second heating lamp is a round lamp.
[0008] In a possible implementation, the plurality of second heating lamps are arranged to form a temperature compensation area; a boundary of the temperature compensation area projected toward the wafer at least surrounds a boundary of the wafer.
[0009] In a possible implementation, the temperature compensation region is a regular hexagon, and the area of the temperature compensation region is larger than the area of a circumscribed hexagon of the wafer.
[0010] In a possible implementation manner, the temperature compensation area is in the shape of a circular ring, and a projection of the temperature compensation area toward the wafer at least covers an edge portion of the wafer.
[0011] In a possible implementation, the temperature compensation area is set according to the low temperature zone.
[0012] In a possible implementation, in a first gap between two adjacent first heating lamps, second heating lamps are arranged at a preset interval according to the length of a temperature compensation area corresponding to the first gap.
[0013] As another aspect of the embodiments of the present disclosure, the embodiments of the present disclosure provide a heat treatment device, including:
[0014] A chamber body, wherein the heating assembly provided by any embodiment of the present disclosure is arranged in the chamber body.
[0015] The disclosed embodiment adopts the above-mentioned technical solution, and optimizes the adjustability of the thermal power at the edge of the substrate by changing the structure and distribution array of the heating lamp group, which can effectively reduce the temperature gradient on the wafer surface; reduces the temperature difference caused by the different wafer surface temperatures caused by heat superposition, diffusion and thermal offset, and improves the surface temperature consistency of the silicon wafer and the consistency of film thickness.
[0016] The above summary is for illustrative purposes only and is not intended to be limiting in any way. In addition to the illustrative aspects, embodiments and features described above, further aspects, embodiments and features of the present disclosure will be readily apparent by reference to the accompanying drawings and the following detailed description. BRIEF DESCRIPTION OF THE DRAWINGS
[0017] In the accompanying drawings, unless otherwise specified, the same reference numerals throughout the multiple drawings represent the same or similar parts or elements. These drawings are not necessarily drawn to scale. It should be understood that these drawings only depict some embodiments provided according to the present disclosure and should not be regarded as limiting the scope of the present disclosure.
[0018] Figure 1 A schematic diagram showing the structure of a heating assembly of a heat treatment device according to an embodiment of the present disclosure is shown;
[0019] Figure 2 A schematic structural diagram of a heating assembly of heat treatment equipment according to another embodiment of the present disclosure is shown.
[0020] Explanation of the reference numerals: 1. first heating lamp; 2. second heating lamp; 3. wafer; 4. temperature compensation area. DETAILED DESCRIPTION
[0021] In the following, only some exemplary embodiments are briefly described. As those skilled in the art will appreciate, the described embodiments may be modified in various ways without departing from the spirit or scope of the present disclosure. Therefore, the drawings and descriptions are considered to be exemplary and non-restrictive in nature.
[0022] Figure 1 A schematic diagram of the structure of a heating assembly of a heat treatment device according to an embodiment of the present disclosure is shown. Figure 1 As shown, the heating component includes:
[0023] A first heating lamp 1, wherein a plurality of first heating lamps 1 are arranged in parallel, and a first gap is provided between two adjacent first heating lamps 1;
[0024] Second heating lamps 2, a plurality of second heating lamps 2 are arranged in the first gap, and light emitted by the second heating lamps 2 passes through the first gap to heat the wafer 3;
[0025] The first heating lamp 1 is a strip lamp, and the second heating lamp 2 is a round lamp.
[0026] In the disclosed embodiment, the first heating lamp 1 is a strip lamp, and a plurality of strip lamps are arranged in parallel on the same plane, and a first gap is provided between two adjacent first heating lamps 1. The first heating lamp 1 is the main heat source of the heating assembly. A plurality of second heating lamps 2 are arranged in the first gap, and the light and radiation emitted by the second heating lamps 2 can pass through the first gap to heat the wafer 3, and the second heating lamps 2 are the auxiliary heat source of the heating assembly. The second heating lamp 2 can be partially in the first gap or completely above the first gap.
[0027] The second heating lamp 2 is a round lamp, each of which has a small diameter. The round lamp can also be called a spot lamp. The power of each spot lamp can usually be controlled independently, but the strip lamps have a small number, the heat power is poorly adjustable, and the radiation energy emitted from different positions on a single strip lamp will also be different, which can easily cause temperature differences at different positions. Therefore, according to the difference in heat generated by the first heating lamp 1 at different positions, the power of the spot lamp at the corresponding position can be adjusted, for example, the power of the spot lamp at a lower temperature position can be increased, or the power of the spot lamp at a higher temperature position can be reduced.
[0028] According to the solution of the embodiment of the present disclosure, by changing the structure and distribution array of the heating lamp group, the adjustability of the thermal power at the edge of the substrate is optimized, which can effectively reduce the temperature gradient on the surface of the wafer 3; it helps to reduce the temperature difference caused by the different surface temperatures of the wafer 3 caused by heat superposition, diffusion and thermal offset, and improves the surface temperature consistency of the silicon wafer and the consistency of film thickness.
[0029] In a possible implementation, a plurality of second heating lamps 2 are arranged to form a temperature compensation area 4 ; a boundary of the temperature compensation area 4 projected toward the wafer 3 at least surrounds a boundary of the wafer 3 .
[0030] In the disclosed embodiment, the temperature compensation area 4 is arranged directly above the wafer 3, and the area of the temperature compensation area 4 is not less than the area of the wafer 3, so that the temperature compensation area 4 covers any position of the wafer 3, so that the temperature of each position of the wafer 3 can be compensated when necessary. For wafers 3 of different sizes, the size of the temperature compensation area 4 is different, and the temperature compensation area 4 needs to cover wafers 3 of various sizes that need to be processed.
[0031] According to the solution of the embodiment of the present disclosure, the temperature compensation area 4 covers the entire wafer 3 , so that any position of the wafer 3 has a corresponding second heating lamp 2 .
[0032] In a possible implementation, the temperature compensation region 4 is a regular hexagon, and the area of the temperature compensation region 4 is larger than the area of the circumscribed hexagon of the wafer 3 .
[0033] In the disclosed embodiment, since the second heating lamps 2 need to be arranged in the first gap, the second heating lamps 2 can only be arranged in multiple rows, and the length of each row of the second heating lamps 2 gradually changes to form a regular hexagon, which can better cover the wafer 3. On the other hand, since the temperature of the edge portion of the wafer 3 is usually lower than that of the central portion, it is necessary to add a second heating lamp 2 to the edge portion so that the area of the temperature compensation area 4 is larger than the area of the circumscribed hexagon of the wafer 3, thereby improving the heating capacity of the edge portion.
[0034] In one example, if Figure 1 The heating assembly of a heat treatment equipment shown has 24 strip lights, and a hexagonally arranged lighting array is arranged above the strip lights, totaling 346 lights, which are arranged in a regular hexagonal honeycomb shape with the center of the water-cooled lamp board as the center and installed within a diameter of 300 mm or 12 inches, with a second gap between two adjacent lights.
[0035] In a possible implementation, the temperature compensation area 4 is in a circular shape, and a projection of the temperature compensation area 4 toward the wafer 3 at least covers an edge portion of the wafer 3 .
[0036] In the present disclosure, Figure 2 As shown, since the temperature of the central portion of the wafer 3 is usually higher than that of the edge portion, the central portion does not need auxiliary heating, so the temperature compensation area 4 is a circular ring covering the edge portion of the wafer 3.
[0037] It should be noted that the second heating lamp 2 of the circular and hexagonal temperature compensation areas 4 can use the same lamp holder when installed, and lamp tubes are evenly spaced on the lamp holder. For the circular temperature compensation area 4, the lamp tube in the center part of the lamp holder does not need to be installed with a heating lamp.
[0038] According to the solution of the embodiment of the present disclosure, the second heating lamps 2 are specifically arranged on the edge portion of the wafer 3 to form a circular ring-shaped temperature compensation area 4, thereby reducing the number of required second heating lamps 2.
[0039] In a possible implementation, the temperature compensation area 4 is set according to the low temperature zone.
[0040] In the disclosed embodiment, the low temperature zone can be determined based on thermodynamic analysis or temperature measurement of the heated objects such as silicon wafers, substrates, and wafers 3. For example, without changing the process gas and process temperature, that is, for a special machine that only completes a certain process of a specific silicon wafer during rapid thermal processing, the position of the low temperature zone on the silicon wafer remains basically unchanged, and the low temperature area can be accurately determined through thermodynamic, fluid analysis and temperature testing, and lights are arranged above the strip lights in these low temperature areas to compensate for the temperature difference, thereby ensuring the consistency of the surface temperature of the silicon wafer.
[0041] The low temperature zone is usually located at the edge of the wafer 3. Compared with the annular temperature compensation area 4, the temperature compensation area set according to the low temperature zone may be an irregular ring band similar to a ring, also known as a widened ring or a wavy ring.
[0042] According to the solution of the embodiment of the present disclosure, the second heating lamps 2 are specifically arranged in the low-temperature area of the wafer 3 to form a ring shape, thereby reducing the number of the required second heating lamps 2.
[0043] In a possible implementation, in a first gap between two adjacent first heating lamps 1 , second heating lamps 2 are arranged at a preset interval according to the length of the temperature compensation area 4 corresponding to the first gap.
[0044] In the disclosed embodiment, a row of second heating lamps 2 can be arranged in the first gap between two adjacent first heating lamps 1. Specifically, each first gap determines the head and tail positions of a row of second heating lamps 2 according to the length of the temperature compensation area 4 corresponding to the first gap, and then determines the number of second heating lamps 2 in the row according to the preset spacing of the second heating lamps 2. A row of second heating lamps 2 can be a continuous section or divided into two sections, and a plurality of continuous second heating lamps 2 have second gaps between them.
[0045] As another aspect of the embodiments of the present disclosure, the embodiments of the present disclosure provide a heat treatment device, including:
[0046] A chamber body, in which the heating assembly provided by any embodiment of the present disclosure is arranged.
[0047] Other components of the heat treatment equipment in the above embodiment may adopt various technical solutions known to ordinary technicians in this field now and in the future, and will not be described in detail here.
[0048] In the description of this specification, it should be understood that the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "up", "down", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inside", "outside", "clockwise", "counterclockwise", "axial", "radial", "circumferential" and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the accompanying drawings, and are only for the convenience of describing the present disclosure and simplifying the description, and do not indicate or imply that the referred device or element must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present disclosure.
[0049] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include one or more of the features. In the description of the present disclosure, the meaning of "plurality" is two or more, unless otherwise clearly and specifically defined.
[0050] In the present disclosure, unless otherwise clearly specified and limited, the terms "installed", "connected", "connected", "fixed" and the like should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a mechanical connection, an electrical connection, or a communication; it can be a direct connection, or an indirect connection through an intermediate medium, it can be the internal connection of two elements or the interaction relationship between two elements. For ordinary technicians in this field, the specific meanings of the above terms in the present disclosure can be understood according to specific circumstances.
[0051] In the present disclosure, unless otherwise clearly specified and limited, a first feature being “above” or “below” a second feature may include that the first and second features are in direct contact, or may include that the first and second features are not in direct contact but are in contact through another feature between them. Moreover, a first feature being “above”, “above”, and “above” a second feature includes that the first feature is directly above and obliquely above the second feature, or simply indicates that the first feature is higher in level than the second feature. A first feature being “below”, “below”, and “below” a second feature includes that the first feature is directly above and obliquely above the second feature, or simply indicates that the first feature is lower in level than the second feature.
[0052] The disclosure above provides many different embodiments or examples to realize different structures of the present disclosure. In order to simplify the disclosure of the present disclosure, the components and settings of specific examples are described above. Of course, they are only examples, and the purpose is not to limit the present disclosure. In addition, the present disclosure can repeat reference numbers and / or reference letters in different examples, and this repetition is for the purpose of simplification and clarity, and does not itself indicate the relationship between the various embodiments and / or settings discussed.
[0053] The above is only a specific implementation of the present disclosure, but the protection scope of the present disclosure is not limited thereto. Any technician familiar with the technical field can easily think of various changes or substitutions within the technical scope disclosed in the present disclosure, which should be included in the protection scope of the present disclosure. Therefore, the protection scope of the present disclosure should be based on the protection scope of the claims.
Claims
1. A heating assembly for heat treatment equipment, comprising: A first heating lamp (1), wherein a plurality of the first heating lamps (1) are arranged in parallel, and a first gap is provided between two adjacent first heating lamps (1); A second heating lamp (2), wherein a plurality of second heating lamps (2) are arranged in the first gap, and light emitted by the second heating lamp (2) passes through the first gap to heat the wafer (3); Wherein, the first heating lamp (1) is a strip lamp, and the second heating lamp (2) is a round lamp.
2. The heating assembly of the heat treatment equipment according to claim 1, wherein: The plurality of second heating lamps (2) are arranged to form a temperature compensation area (4); the boundary of the temperature compensation area (4) projected toward the wafer (3) at least surrounds the boundary of the wafer (3).
3. The heating assembly of the heat treatment equipment according to claim 2, wherein: The temperature compensation region (4) is a regular hexagon, and the area of the temperature compensation region (4) is larger than the area of the circumscribed hexagon of the wafer (3).
4. The heating assembly of the heat treatment equipment according to claim 2, wherein: The temperature compensation area (4) is in the shape of a ring, and the projection of the temperature compensation area (4) toward the wafer (3) at least covers the edge portion of the wafer (3).
5. The heating assembly of the heat treatment equipment according to claim 2, wherein: The temperature compensation area (4) is set according to the low temperature zone.
6. The heating assembly of heat treatment equipment according to any one of claims 1 to 5, wherein: In a first gap between two adjacent first heating lamps (1), second heating lamps (2) are arranged at a preset interval according to the length of a temperature compensation area (4) corresponding to the first gap.
7. A heat treatment device, wherein: include: A chamber body, wherein the heating assembly as claimed in any one of claims 1 to 6 is arranged.