Partitioned temperature control wafer heating stage and wafer processing equipment applying same

Abstract

The embodiment of the invention provides a partition temperature control wafer heating stage and wafer processing equipment applying the same. The partition temperature control wafer heating stage comprises a heating stage body which is vertically arranged; the heating channel is arranged in the heating stage body; the heating channel comprises a heating part which is vortex-shaped on the horizontal plane, and a liquid inlet channel and a liquid outlet channel which are correspondingly communicated with two end points of the heating part; and the at least one heating piece extends in the peripheral direction of the heating stage body in the edge area or the middle area of the heating stage body determined by the position of the communication end point of the heating part and the liquid outlet channel. The wafer processing equipment comprises a processing table, an excitation coil, a gas uniformizing plate and a gas exhausting and uniformizing ring, the bottom of the machining table is provided with at least two air exhaust channels communicating with the machining cavity. The excitation coil is arranged in the excitation chamber; the partition temperature control wafer heating stage is arranged in the processing chamber; the gas uniformizing plate is arranged in the processing cavity and located above the heating stage body, so that the plasma entering the processing cavity uniformly reaches the wafer on the heating stage body. And the temperature of the heating area of the heating stage body can be adjusted.

Description

Technical Field

[0001] The present disclosure relates to the field of wafer processing technology, and in particular to a zoned temperature-controlled wafer hot stage and wafer processing equipment using the same. Background Art

[0002] Wafer refers to the silicon wafer used to make silicon semiconductor circuits, and its original material is silicon. High-purity polysilicon is dissolved and doped with silicon crystal seeds, and then slowly pulled out to form cylindrical single crystal silicon. Temperature is one of the key factors affecting the quality of wafer production. By controlling the temperature of the hot plate body, it can ensure that the wafer is in the best condition during the production process, reduce quality problems caused by temperature fluctuations, and thus improve product stability and performance. However, most of the existing wafer hot plate bodies have high temperatures in the middle and low temperatures at the edges, and it is impossible to control the temperature in different areas, resulting in a low pass rate for wafer processing. Summary of the invention

[0003] In view of the above-mentioned shortcomings of the prior art, the purpose of the present invention is to provide a zoned temperature-controlled wafer hot stage and a wafer processing equipment using the same, so as to solve the problems in the related art.

[0004] The first aspect of the present disclosure provides a zoned temperature-controlled wafer hot stage, comprising:

[0005] A vertically arranged heating table body;

[0006] A heating channel is provided in the heating platform body; the heating channel includes a heating portion in a spiral shape on a horizontal plane, and a liquid inlet channel and a liquid outlet channel correspondingly connected to two end points of the heating portion;

[0007] At least one heating element is disposed in the heat platform body and is extended along the circumference of the heat platform body in an edge area or a middle area of ​​the heat platform body determined by the position of the communication end point between the heating portion and the liquid outlet channel.

[0008] In an embodiment of the first aspect, the heating portion includes a heating inner ring corresponding to the middle area and a heating outer ring corresponding to the edge area; wherein, when the liquid outlet channel is connected to the end end of the heating portion, the heating element corresponds to the heating outer ring; and / or, when the liquid outlet channel is connected to the starting end of the heating portion, the heating element corresponds to the heating inner ring.

[0009] In an embodiment of the first aspect, it also includes a first annular heat insulation channel, which is arranged in the heat platform body; the heating part includes a heating inner ring corresponding to the middle area and a heating outer ring corresponding to the edge area; the first heat insulation channel is arranged between the heating inner ring and the heating outer ring to separate the heating inner ring from the heating outer ring.

[0010] In an embodiment of the first aspect, a U-shaped channel for avoiding the first heat insulation channel is provided at the connection point between the heating inner ring and the heating outer ring.

[0011] In an embodiment of the first aspect, the hot plate body includes a first heating plate at the top, a supporting base at the bottom, and a second heating plate arranged between the first heating plate and the supporting base; the heating part is arranged in the area where the first heating plate and the second heating plate are in contact; the liquid inlet channel and the liquid outlet channel are arranged on the supporting base.

[0012] In an embodiment of the first aspect, the supporting base is provided with an annular second thermal insulation channel, and the liquid inlet channel and the liquid outlet channel are located in the annular second thermal insulation channel.

[0013] In an embodiment of the first aspect, the heating portion includes a heating inner ring corresponding to the middle area and a heating outer ring corresponding to the edge area; when the liquid outlet channel is connected to the terminal end of the heating portion, and under the action of the heating element, the temperature of the area corresponding to the heating outer ring on the hot stage body is higher than the temperature of the area corresponding to the heating inner ring.

[0014] A second aspect of the present disclosure provides a wafer processing device, comprising:

[0015] The processing table comprises an excitation chamber and a processing chamber arranged up and down, and an ion gas inlet for connecting the excitation chamber and the processing chamber; at least two exhaust gas passages connected to the processing chamber are provided at the bottom of the processing table;

[0016] An excitation coil, disposed in the excitation chamber;

[0017] The zoned temperature-controlled wafer hot stage is arranged in the processing chamber;

[0018] A uniform gas plate is disposed in the processing chamber and above the zoned temperature-controlled wafer hot stage, so that the plasma entering the processing chamber can evenly reach the wafer surface on the zoned temperature-controlled wafer hot stage;

[0019] The air extraction and uniforming ring is arranged to fill the gap between the outer wall of the hot stage body and the inner wall of the processing chamber.

[0020] In an embodiment of the second aspect, a plurality of evenly distributed first air uniforming holes are formed on the air uniforming plate.

[0021] In an embodiment of the second aspect, a plurality of evenly distributed second air uniforming holes are formed on the air pumping and uniforming ring.

[0022] As described above, the embodiments of the present disclosure provide a zoned temperature-controlled wafer hot stage and a wafer processing device using the same; the zoned temperature-controlled wafer hot stage comprises a vertically arranged hot stage body; a heating channel arranged in the hot stage body; the heating channel comprises a heating portion in a vortex shape on a horizontal plane, and a liquid inlet channel and a liquid outlet channel corresponding to the two end points of the heating portion; at least one heating element is arranged in the hot stage body and extends along the circumference of the hot stage body in an edge area or a middle area of ​​the hot stage body determined by the position of the connecting end point between the heating portion and the liquid outlet channel. The wafer processing equipment includes a processing table, an excitation coil, an air uniforming plate and an air pumping and uniforming ring; the processing table includes an excitation chamber and a processing chamber arranged up and down, and an ion gas inlet for connecting the excitation chamber and the processing chamber; at least two air pumping passages connected to the processing chamber are provided at the bottom of the processing table; the excitation coil is arranged in the excitation chamber; the zoned temperature-controlled wafer hot stage is arranged in the processing chamber; the air uniforming plate is arranged in the processing chamber and is located above the zoned temperature-controlled wafer hot stage, so that the plasma entering the processing chamber can evenly reach the wafer surface on the zoned temperature-controlled wafer hot stage; the air pumping and uniforming ring is filled in the gap between the outer wall of the hot stage body and the inner wall of the processing chamber. BRIEF DESCRIPTION OF THE DRAWINGS

[0023] Figure 1 FIG. 1 is a schematic diagram of the overall structure of a zoned temperature-controlled wafer hot stage in an embodiment of the present disclosure;

[0024] Figure 2 , which is a cross-sectional schematic diagram of a zoned temperature-controlled wafer hot stage in a disclosed embodiment;

[0025] Figure 3 , which is a cross-sectional schematic diagram of a zoned temperature-controlled wafer hot stage from another perspective in the disclosed embodiment;

[0026] Figure 4 FIG. 1 is a cross-sectional schematic diagram of a zoned temperature-controlled wafer hot stage in another embodiment of the present disclosure;

[0027] Figure 5 Shown in is a cross-sectional schematic diagram of the overall structure of the wafer processing equipment in an embodiment of the present disclosure.

[0028] Reference numerals:

[0029] 10. Heating platform body; 11. First heating plate; 12. Second heating plate; 13. Supporting base; 101. First heat insulation channel; 102. U-shaped channel; 103. Second heat insulation channel; 104. Placement chamber;

[0030] 20. Heating channel; 21. Heating part; 211. Heating inner ring; 212. Heating outer ring; 22. Liquid inlet channel; 23. Liquid outlet channel;

[0031] 30. Heating element;

[0032] 40. Wafer processing equipment; 41. Processing table; 401. Excitation chamber; 402. Processing chamber; 4101. Exhaust air duct; 4102. Ion gas inlet; 42. Excitation coil; 43. Gas uniforming plate; 4301. First gas uniforming hole; 44. Exhaust gas uniforming ring; 4401. Second gas uniforming hole. DETAILED DESCRIPTION

[0033] The following is an explanation of the embodiments of the present disclosure by specific examples, and those skilled in the art can easily understand other advantages and effects of the present disclosure from the information disclosed by the present disclosure. The present disclosure can also be implemented or applied through other different specific embodiments, and the details in the present disclosure can also be modified or changed in various ways according to different viewpoints and application modules without departing from the spirit of the present disclosure. It should be noted that the embodiments in the present disclosure and the features in the embodiments can be combined with each other without conflict.

[0034] The following is a detailed description of the embodiments of the present disclosure with reference to the accompanying drawings so that those skilled in the art can easily implement the present disclosure. The present disclosure can be embodied in many different forms and is not limited to the embodiments described herein.

[0035] In the representations of the present disclosure, the reference terms "one embodiment", "some embodiments", "examples", "specific examples", or "some examples" and the like mean that the specific features, structures, materials or characteristics represented in conjunction with the embodiment or example are included in at least one embodiment or example of the present disclosure. Moreover, the specific features, structures, materials or characteristics represented may be combined in any one or a group of embodiments or examples in a suitable manner. In addition, those skilled in the art may combine and combine different embodiments or examples represented in the present disclosure and the features of different embodiments or examples, unless they are mutually contradictory.

[0036] In addition, the terms "first" and "second" are used for descriptive purposes only and should not be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, a feature defined as "first" or "second" may explicitly or implicitly include at least one of the features. In the representation of the present disclosure, "a group" means two or more, unless otherwise clearly and specifically defined.

[0037] In order to clearly describe the present disclosure, components not related to the description are omitted, and the same reference numerals are given to the same or similar components throughout the specification.

[0038] Throughout the specification, when a device is said to be "connected" to another device, this includes not only the case of "direct connection" but also the case of "indirect connection" by placing other elements therebetween. In addition, when a device is said to "include" a certain component, unless otherwise stated, it does not exclude other components, but means that other components may be included.

[0039] Although the terms first, second, etc. are used to represent various elements in this article in some examples, these elements should not be limited by these terms. These terms are only used to distinguish one element from another element. For example, the first interface and the second interface, etc. are represented. Moreover, as used in this article, the singular forms "one", "one" and "the" are intended to also include plural forms, unless there is an opposite indication in the context. It should be further understood that the terms "comprising" and "including" indicate that there are the described features, steps, operations, elements, modules, projects, kinds, and / or groups, but do not exclude the existence, occurrence or addition of one or a group of other features, steps, operations, elements, modules, projects, kinds, and / or groups. The terms "or" and "and / or" used herein are interpreted as inclusive, or mean any one or any combination. Therefore, "A, B or C" or "A, B and / or C" means "any of the following: A; B; C; A and B; A and C; B and C; A, B and C". Only when the combination of elements, functions, steps or operations is inherently mutually exclusive in some way, will there be an exception to this definition.

[0040] The technical terms used herein are only used to refer to specific embodiments and are not intended to limit the present disclosure. The singular form used herein also includes the plural form unless the sentence clearly indicates the contrary meaning. The meaning of "including" used in the specification is to specify specific characteristics, regions, integers, steps, operations, elements and / or components, and does not exclude the existence or addition of other characteristics, regions, integers, steps, operations, elements and / or components.

[0041] Although not defined differently, all terms, including technical and scientific terms used herein, have the same meaning as those generally understood by those skilled in the art to which the present disclosure belongs. Terms defined in commonly used dictionaries are additionally interpreted as having meanings consistent with relevant technical literature and the message of the present disclosure, and shall not be overly interpreted as ideal or very formal meanings unless defined.

[0042] Wafer refers to the silicon wafer used to make silicon semiconductor circuits, and its original material is silicon. High-purity polysilicon is dissolved and doped with silicon crystal seeds, and then slowly pulled out to form cylindrical single crystal silicon. Temperature is one of the key factors affecting the quality of wafer production. By controlling the temperature of the hot plate body, it can ensure that the wafer is in the best condition during the production process, reduce quality problems caused by temperature fluctuations, and thus improve product stability and performance. However, most of the existing wafer hot plate bodies have high temperatures in the middle and low temperatures at the edges, and it is impossible to control the temperature in different areas, resulting in a low pass rate for wafer processing.

[0043] Based on the above problems, in the embodiment of the present disclosure, the spiral heating portion can cover the heating area on the upper surface of the heat platform body, and the heating element can perform auxiliary heating on the portion of the heating portion connected to the liquid outlet channel, thereby avoiding the temperature drop of the heating medium flowing from the liquid inlet channel to the liquid storage portion, resulting in the portion of the heating portion connected to the liquid outlet channel being lower than the portion of the heating portion connected to the liquid inlet channel, thereby avoiding the problem of poor wafer processing effect caused by the adjustable temperature of the heating area of ​​the heat platform body.

[0044] Figure 1 ] is a schematic diagram of the overall structure of a zoned temperature-controlled wafer hot stage in an embodiment of the present disclosure. Figure 2 The figure shows a cross-sectional schematic diagram of a zoned temperature-controlled wafer hot stage in the disclosed embodiment. Figure 1 and Figure 2 In the example, the zoned temperature-controlled wafer hot stage includes a hot stage body 10, a heating channel 20 and at least one heating element 30. The heating channel 20 is arranged in the hot stage body 10; the heating channel 20 includes a heating portion 21 in a spiral shape on a horizontal plane, and a liquid inlet channel 22 and a liquid outlet channel 23 correspondingly connected to the two end points of the heating portion 21. The heating element 30 is arranged in the hot stage body 10, and is extended along the circumference of the hot stage body 10 in the edge area or the middle area of ​​the hot stage body 10 determined by the position of the connecting end points of the heating portion 21 and the liquid outlet channel 23.

[0045] The advantage of the above arrangement is that the spiral heating portion 21 can cover the heating area on the upper surface of the hot stage body 10, and the surrounding heating element 30 can assist in heating the portion of the heating portion 21 connected to the liquid outlet channel 23, thereby preventing the portion of the heating portion 21 connected to the liquid outlet channel 23 from being lower than the portion of the heating portion 21 connected to the liquid inlet channel 22 due to the temperature drop caused by the heating medium flowing from the liquid inlet channel 22 to the liquid storage portion, thereby avoiding the problem of poor wafer processing effect caused by the adjustable temperature of the heating area of ​​the hot stage body 10.

[0046] Exemplarily, the heat stage body 10 includes a first heating plate 11 at the top, a supporting base 13 at the bottom, and a second heating plate 12 disposed between the first heating plate 11 and the supporting base 13; the heating portion 21 is disposed in the area where the first heating plate 11 and the second heating plate 12 are attached; the liquid inlet channel 22 and the liquid outlet channel 23 are disposed on the supporting base 13. In this embodiment, the first heating plate 11 and the second heating plate 12 are implemented as cylinders of the same diameter, and the supporting base 13 is implemented as a cylinder with a diameter smaller than that of the first heating plate 11. The advantage of such a setting is that the first heating plate 11 with a larger diameter can support the wafer to meet the processing requirements; and the overall volume of the heat stage body 10 is reduced, thereby reducing the manufacturing cost and the space occupied. In another embodiment, the first heating plate 11 and the second heating plate 12 can also be implemented as rectangles or polygons, but are not limited thereto.

[0047] Exemplarily, the heating portion 21 is implemented as a first heating groove and a second heating groove respectively recessed in the wall surfaces of the first heating disk 11 and the second heating disk 12, and the first heating disk 11 and the second heating disk 12 are attached to form the heating portion 21. Exemplarily, the cross section of the heating portion 21 is implemented as a circle or a square. When the cross section of the heating portion 21 is implemented as a square, the area of ​​heat exchange between the heating portion 21 and the first heating disk 11 and the second heating disk 12 can be further increased, thereby further improving the heating effect of the heating disk.

[0048] In another embodiment, the heating portion 21 is implemented as a heating tube disposed between the wall surfaces where the first heating plate 11 and the second heating plate 12 are in contact.

[0049] Exemplarily, the liquid inlet channel 22 and the liquid outlet channel 23 are both implemented to consist of two connected parts, namely, one part is arranged on the supporting base 13 and forms a liquid inlet or liquid storage port, and the other part is arranged on the second heating plate 12 and connected to the starting end and the end end of the heating part 21.

[0050] Further exemplarily, the first heating plate 11 and the second heating plate 12, the second heating plate 12 and the supporting base 13 are all welded by a brazing process. In another embodiment, the first heating plate 11 and the second heating plate 12, the second heating plate 12 and the supporting base 13 are implemented as screw connections to facilitate adjustment or maintenance of the heating portion 21.

[0051] Figure 3 FIG. 1 is a cross-sectional schematic diagram of a zoned temperature-controlled wafer hot stage from another perspective in the disclosed embodiment. Figure 2 and Figure 3In the example, the heating platform body 10 further includes a first annular heat-insulating channel 101, which is arranged in the heating platform body 10; the heating portion 21 includes a heating inner ring 211 corresponding to the middle area and a heating outer ring 212 corresponding to the edge area; the first heat-insulating channel 101 is arranged between the heating inner ring 211 and the heating outer ring 212 to separate the heating inner ring 211 from the heating outer ring 212. It can be understood that the first heat-insulating channel 101 is also composed of two parts, that is, one part is formed on the first heating plate 11, and the other part is formed on the second heating plate 12. That is, the first heat-insulating channel 101 is formed by combining the first heating plate 11 and the second heating plate 12 after being attached. It can be understood that the first heat-insulating channel 101 can reduce the temperature transfer between the heating outer ring 212 and the heating inner ring 211, thereby improving the temperature control effect of the heating outer ring 212 and the heating inner ring 211.

[0052] Exemplarily, a U-shaped channel 102 for avoiding the first heat insulation channel 101 is provided at the connection between the inner heating ring 211 and the outer heating ring 212. Preferably, the U-shaped channel 102 is formed on the second heating plate 12 with its opening facing upward, and the first heat insulation channel 101 is located in the opening of the U-shaped channel 102. It can be understood that the U-shaped channel 102 can both ensure the integrity of the heating part 21 and avoid the first heat insulation channel 101. In another embodiment, the U-shaped channel 102 is formed on the first heating plate 11 with its opening facing downward.

[0053] exist Figure 3 In the example, there is only one intersection point between the first annular heat-insulating channel 101 and the heating part 21, and the heating part 21 avoids the first annular heat-insulating channel 101 through the U-shaped channel 102. The advantage of such a setting is that the integrity of the annular shape of the first heat-insulating channel 101 can be ensured, so as to improve the effect of the first heat-insulating channel 101 in avoiding the temperature transfer between the heating outer ring 212 and the heating inner ring 211. The number of intersection points between the first heat-insulating channel 101 and the heating part 21 can also be reduced, that is, the number of the U-shaped channels 102 can be reduced, thereby reducing the flow of the heating medium in the multiple U-shaped channels 102, and then reducing the heat loss of the heating medium when it flows in the multiple U-shaped channels 102, so as to improve the heating effect of the heating medium on the heating platform body 10.

[0054] exist Figure 2In the example, the supporting base 13 is provided with an annular second heat-insulating channel 103, and the liquid inlet channel 22 and the liquid outlet channel 23 are located in the annular second heat-insulating channel 103. Those skilled in the art can understand that the second heat-insulating channel 103 can isolate the heat exchange between the processing chamber 402 and the hot stage body 10, thereby further preventing the heat loss of the hot stage body 10.

[0055] Exemplarily, the heating portion 21 includes a heating inner ring 211 corresponding to the middle region and a heating outer ring 212 corresponding to the edge region. When the liquid outlet channel 23 is connected to the terminal end of the heating portion 21, the heating element 30 corresponds to the heating outer ring 212; and / or when the liquid outlet channel 23 is connected to the starting end of the heating portion 21, the heating element 30 corresponds to the heating inner ring 211.

[0056] exist Figure 2 In the embodiment, the liquid inlet channel 22 is connected to the starting end of the heating part 21, the liquid outlet channel 23 is connected to the terminal end of the heating part 21, and the heating element 30 corresponds to the heating outer ring 212. In this way, the heating medium first passes through the heating inner ring 211 through the liquid inlet channel 22, and enters the heating outer ring 212 after passing through the U-shaped channel 102. However, since the temperature of the heating medium entering the heating outer ring 212 has been reduced due to heat transfer at this time, the temperature of the area where the heating outer ring 212 is located on the first heating disk 11 is also reduced (that is, the temperature of the heating outer ring 212 is lower than the temperature of the heating inner ring 211). At this time, the heating element 30 can be used to perform auxiliary heating on the area where the heating outer ring 212 is located on the first heating disk 11, so as to achieve the purpose of regulating the heating inner ring 211 and the heating outer ring 212 respectively.

[0057] Those skilled in the art can understand that the heating element 30 can not only assist in heating the area where the heating outer ring 212 is located on the first heating disk 11, but also heat the heating medium flowing through the heating outer ring 212, thereby further improving the heating effect of the heating outer ring 212.

[0058] For example, the heating platform body 10 is formed with a placement chamber 104 for placing the heating element 30. Figure 2 In the example, the placement chamber 104 is implemented as a ring and is correspondingly formed directly below the heating outer ring 212 to achieve heating of the heating outer ring 212. Further exemplary, the heating element 30 is implemented as a heating wire, and the size of the placement chamber 104 depends on the size of the coiled area of ​​the heating wire.

[0059] Figure 4FIG. 1 is a cross-sectional schematic diagram of a zoned temperature-controlled wafer hot stage in another embodiment of the present disclosure. Figure 4 In the example, the liquid inlet channel 22 is connected to the terminal end of the heating part 21, the liquid outlet channel 23 is connected to the starting end of the heating part 21, and the heating element 30 corresponds to the heating inner ring 211. In this way, the heating medium first passes through the heating outer ring 212 through the liquid inlet channel 22, and enters the heating inner ring 211 after passing through the U-shaped channel 102. However, since the temperature of the heating medium entering the heating inner ring 211 has been reduced due to heat transfer at this time, the temperature of the area where the heating inner ring 211 is located on the first heating disk 11 is also reduced (that is, the temperature of the heating inner ring 211 is lower than the temperature of the heating outer ring 212). At this time, the heating element 30 can be used to perform auxiliary heating on the area where the heating inner ring 211 is located on the first heating disk 11, so as to achieve the purpose of regulating the heating inner ring 211 and the heating outer ring 212 respectively. Exemplarily, the liquid inlet channel 22 is formed on the second heating disk 12 or the second heating disk 12 and the supporting base 13.

[0060] As a preference, Figure 2 or Figure 4 In the example, under the action of the heating element 30, the temperature of the area corresponding to the heating outer ring 212 on the heat stage body 10 is higher than the temperature of the area corresponding to the heating inner ring 211. It can be understood by those skilled in the art that because the temperature loss rate of the edge of the heat stage body 10 is higher than the temperature loss rate of the internal temperature, it is necessary to make the temperature of the outer ring of the heat stage body 10 higher than the temperature of the inner ring during wafer processing, so that the temperature loss rate of the entire heat stage body 10 can be more balanced, so as to avoid the wafer being unqualified due to the uneven temperature of the heat stage body 10.

[0061] Figure 5 The figure shows a cross-sectional view of the overall structure of the wafer processing equipment in the embodiment of the present disclosure. Figure 5In an example, another embodiment of the present disclosure provides a wafer processing device 40 . The wafer processing equipment 40 includes a processing table 41, an excitation coil 42, an air uniforming plate 43 and an air pumping and uniforming ring 44; the processing table 41 includes an excitation chamber 401 and a processing chamber 402 arranged up and down, and an ion gas inlet 4102 for connecting the excitation chamber 401 and the processing chamber 402; at least two air pumping passages 4101 connected to the processing chamber 402 are provided at the bottom of the processing table 41; the excitation coil 42 is arranged in the excitation chamber 401; the zoned temperature-controlled wafer hot stage is arranged in the processing chamber 402; the air uniforming plate 43 is arranged in the processing chamber 402 and is located above the zoned temperature-controlled wafer hot stage, so that the plasma entering the processing chamber 402 can evenly reach the wafer surface on the zoned temperature-controlled wafer hot stage; the air pumping and uniforming ring 44 is filled in the gap between the outer wall of the hot stage body 10 and the inner wall of the processing chamber 402.

[0062] Exemplarily, the gas uniformizing plate 43 is formed with a plurality of uniformly distributed first gas uniformizing holes 4301. Exemplarily, the gas pumping and uniformizing ring 44 is formed with a plurality of uniformly distributed second gas uniformizing holes 4401.

[0063] In summary, the embodiments of the present disclosure provide a zoned temperature-controlled wafer hot stage and a wafer processing device using the same; the zoned temperature-controlled wafer hot stage comprises a vertically arranged hot stage body; a heating channel arranged in the hot stage body; the heating channel comprises a heating portion in a vortex shape on a horizontal plane, and a liquid inlet channel and a liquid outlet channel corresponding to two end points of the heating portion; at least one heating element is arranged in the hot stage body and extends along the circumference of the hot stage body in an edge area or a middle area of ​​the hot stage body determined by the position of the connecting end point of the heating portion and the liquid outlet channel. The wafer processing equipment includes a processing table, an excitation coil, an air uniforming plate and an air pumping and uniforming ring; the processing table includes an excitation chamber and a processing chamber arranged up and down, and an ion gas inlet for connecting the excitation chamber and the processing chamber; at least two air pumping passages connected to the processing chamber are provided at the bottom of the processing table; the excitation coil is arranged in the excitation chamber; the zoned temperature-controlled wafer hot stage is arranged in the processing chamber; the air uniforming plate is arranged in the processing chamber and is located above the zoned temperature-controlled wafer hot stage, so that the plasma entering the processing chamber can evenly reach the wafer surface on the zoned temperature-controlled wafer hot stage; the air pumping and uniforming ring is filled in the gap between the outer wall of the hot stage body and the inner wall of the processing chamber. In the disclosed embodiment, the spiral heating portion can cover the heating area on the upper surface of the heat platform body, and the heating element can perform auxiliary heating on the portion of the heating portion connected to the liquid outlet channel, thereby preventing the portion of the heating portion connected to the liquid outlet channel from being lower than the portion of the heating portion connected to the liquid inlet channel due to the temperature drop caused by the heating medium flowing from the liquid inlet channel to the liquid storage portion, thereby avoiding the problem of poor wafer processing effect caused by the adjustable temperature of the heating area of ​​the heat platform body.

[0064] The above embodiments are merely illustrative of the principles and effects of the present disclosure, and are not intended to limit the present disclosure. Anyone familiar with the technology may modify or change the above embodiments without violating the spirit and scope of the present disclosure. Therefore, all equivalent modifications or changes made by those with ordinary knowledge in the technical field without departing from the spirit and technical ideas disclosed in the present disclosure shall still be covered by the protection scope of the present disclosure.

Claims

1. A zoned temperature-controlled wafer hot stage, characterized in that: include: Hot stage body; A heating channel is provided in the heating platform body; the heating channel includes a heating portion in a spiral shape on a horizontal plane, and a liquid inlet channel and a liquid outlet channel correspondingly connected to two end points of the heating portion; At least one heating element is disposed in the heat platform body and is extended along the circumference of the heat platform body in an edge area or a middle area of ​​the heat platform body determined by the position of the communication end point between the heating portion and the liquid outlet channel.

2. The zoned temperature-controlled wafer hot stage according to claim 1, characterized in that: The heating portion comprises an inner heating ring corresponding to the middle area and an outer heating ring corresponding to the edge area; wherein, when the liquid outlet channel is connected to the terminal end of the heating portion, the heating element corresponds to the outer heating ring; and / or, when the liquid outlet channel is connected to the starting end of the heating portion, the heating element corresponds to the inner heating ring.

3. The zoned temperature-controlled wafer hot stage according to claim 1, characterized in that: It also includes a first annular heat-insulating channel, which is arranged in the heat platform body; the heating part includes a heating inner ring corresponding to the middle area and a heating outer ring corresponding to the edge area; the first heat-insulating channel is arranged between the heating inner ring and the heating outer ring to separate the heating inner ring from the heating outer ring.

4. The zoned temperature-controlled wafer hot stage according to claim 3, characterized in that: A U-shaped channel for avoiding the first heat insulation channel is provided at the connection point between the heating inner ring and the heating outer ring.

5. The zoned temperature-controlled wafer hot stage according to claim 1, characterized in that: The heating platform body includes a first heating plate at the top, a supporting base at the bottom, and a second heating plate arranged between the first heating plate and the supporting base; the heating part is arranged in the area where the first heating plate and the second heating plate are in contact; the liquid inlet channel and the liquid outlet channel are arranged on the supporting base.

6. The zoned temperature-controlled wafer hot stage according to claim 5, characterized in that: The supporting base is provided with an annular second heat-insulating channel, and the liquid inlet channel and the liquid outlet channel are located in the annular second heat-insulating channel.

7. The zoned temperature-controlled wafer hot stage according to claim 1, characterized in that: The heating portion comprises an inner heating ring corresponding to the middle area and an outer heating ring corresponding to the edge area; when the liquid outlet channel is connected to the terminal end of the heating portion and under the action of the heating element, the temperature of the outer heating ring on the heating platform body is higher than the temperature of the inner heating ring.

8. A wafer processing equipment, characterized in that: include: The processing table comprises an excitation chamber and a processing chamber arranged up and down, and an ion gas inlet for connecting the excitation chamber and the processing chamber; at least two exhaust gas passages connected to the processing chamber are provided at the bottom of the processing table; An excitation coil, disposed in the excitation chamber; The zoned temperature-controlled wafer hot stage according to any one of claims 1 to 7, arranged in the processing chamber; A uniform gas plate is disposed in the processing chamber and above the zoned temperature-controlled wafer hot stage, so that the plasma entering the processing chamber can evenly reach the wafer surface on the zoned temperature-controlled wafer hot stage; The air extraction and uniforming ring is arranged to fill the gap between the outer wall of the hot stage body and the inner wall of the processing chamber.

9. The wafer processing equipment according to claim 8, characterized in that: The gas-uniform plate is formed with a plurality of evenly distributed first gas-uniform holes.

10. The wafer processing equipment according to claim 8, characterized in that: The air pumping and uniforming ring is formed with a plurality of uniformly distributed second air uniforming holes.

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