Method for producing optoelectronic component and optoelectronic component
By applying and solidifying specific precursors on the carrier of optoelectronic components to form a transparent resin and reflective resin, the problem of insufficient brightness in the optical components in existing technologies has achieved higher brightness and manufacturing efficiency.
Patent Information
- Application Number
- CN202280097095.6
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- Filing Date
- 2022-06-14
- Publication Date
- 2025-01-28
AI Technical Summary
In the prior art, it is difficult to realize an efficient and high brightness method when manufacturing optoelectronic components, especially because the light brightness of the optoelectronic components is low due to insufficient coverage of the reflective resin.
By applying the first forefront and the second forefront on the carrier, the side part of the semiconductor chip is covered with the first forefront, and the second forefront is creeped between the carrier and the first precursor to ensure that the reflected resin is completely covered. The bottom surface of the carrier is only partially covered with the side of the semiconductor chip.
The overall brightness of the optoelectronic component is achieved. By ensuring that the reflex resin is fully covered with the bottom surface of the carrier, the carrier avoids absorbing electromagnetic radiation, thereby enhancing the brightness.
Smart Images
Figure CN119384887A_ABST
Abstract
Description
[0001] A method for producing an optoelectronic component and an optoelectronic component are specified.
[0002] It is an object to provide a simple and efficient method for producing an optoelectronic component. Another object is to provide an optoelectronic component with increased brightness.
[0003] According to an embodiment of the method, a carrier is provided, which has a semiconductor chip configured to emit electromagnetic radiation. The semiconductor chip comprises: a chip mounting surface, a top surface opposite to the chip mounting surface, and a side surface arranged between the chip mounting surface and the top surface. The semiconductor chip is mounted on the carrier via the chip mounting surface. In addition, the carrier in particular provides electrical contact for the semiconductor chip. Preferably, more than one semiconductor chip, for example four semiconductor chips, are mounted on the carrier.
[0004] According to an embodiment of the method, the first precursor is applied on the carrier such that the side surfaces of the semiconductor chip are at least partially covered with the first precursor. In particular, the first precursor is in liquid form.
[0005] According to an embodiment of the method, a second precursor is applied to the carrier so that the second precursor creeps between the carrier and the first precursor. In particular, the second precursor is in liquid form. In particular, the first precursor provides weight to the second precursor so that the second precursor is prevented from creeping upward along the side of the semiconductor chip to the top surface. In addition, the first precursor preferably changes the contact angle between the side and the second precursor so that the second precursor is prevented from creeping upward along the side of the semiconductor chip to the top surface. For example, when the first precursor is not used, the contact angle is less than 90°, while when the first precursor is used, the contact angle is, for example, at least 90°.
[0006] According to an embodiment of the method, the first precursor is cured so that the first precursor forms a transparent resin. In particular, the transparent resin is in solid form. Here and hereinafter, the resin is in particular a synthetic polymer, preferably obtainable by irreversible curing of the corresponding precursor. In particular, the first precursor is cured by heating the first precursor to an elevated temperature. For example, the first precursor is heated to at least 50° C., at least 80° C. or at least 100° C. Additionally or alternatively, the first precursor is cured in particular by radiation (e.g. with UV light) and / or by using a catalyst.
[0007] According to an embodiment of the method, the second precursor is cured so that the second precursor forms a reflective resin. In particular, the reflective resin is in solid form. In particular, the second precursor is cured by heating the second precursor to an elevated temperature. For example, the second precursor is heated to at least 50° C., at least 80° C., or at least 100° C.
[0008] According to an embodiment of the method, the transparent resin and the reflective resin are in direct physical contact. In other words, the transparent resin and the reflective resin have a common interface.
[0009] According to an embodiment of the method, the transparent resin and the reflective resin cover the side of the semiconductor chip at least in some places. In particular, at least a portion of the side is covered by the transparent resin. Preferably, the reflective resin only covers the side in some places. For example, the transparent resin and / or the reflective resin are in direct physical contact with the side.
[0010] In particular, the transparent resin is adjacent to the top surface and covers the area of the side surface adjacent to the top surface. Preferably, the reflective resin is adjacent to the chip mounting surface and covers the area of the side surface adjacent to the chip mounting surface. For example, the transparent resin and the reflective resin together completely cover the side surface.
[0011] According to an embodiment of the method, the method comprises:
[0012] - providing a carrier having a semiconductor chip configured to emit electromagnetic radiation, wherein the semiconductor chip comprises a chip mounting surface, a top surface opposite the chip mounting surface, and a side surface arranged between the chip mounting surface and the top surface, and wherein the semiconductor chip is mounted on the carrier via the chip mounting surface,
[0013] - applying a first precursor on the carrier such that side surfaces of the semiconductor chip are at least partially covered with the first precursor,
[0014] - applying a second precursor on the carrier so that the second precursor creeps between the carrier and the first precursor, and
[0015] - Curing the first precursor and the second precursor such that the first precursor forms a transparent resin and the second precursor forms a reflective resin.
[0016] Preferably, the method steps are performed in the order given.
[0017] In particular, other methods for manufacturing optoelectronic components with reflective resins include: applying the reflective resin or its precursor in a region away from the semiconductor chip so that the reflective resin does not cover the side of the semiconductor chip; forming a barrier ring around the semiconductor chip that prevents the transparent resin or its precursor from covering the side of the semiconductor chip; or introducing a groove in the carrier so that the flow of the transparent resin or its precursor stops before reaching the semiconductor chip. However, with these methods, a portion of the bottom surface of the carrier around the semiconductor chip is free of reflective resin, which results in a lower brightness of the optoelectronic component.
[0018] By the method described herein, the bottom surface of the carrier around the semiconductor chip can be completely covered with the reflective resin, while only a portion of the side surface of the semiconductor chip is covered by the reflective resin. In particular, the reflective resin is in direct contact with the side surface of the semiconductor chip. In this way, the overall brightness of the optoelectronic component can be improved.
[0019] According to an embodiment of the method, applying the first precursor comprises: dispensing the first precursor onto the carrier so that the first precursor is in direct physical contact with the side surface, and creeping the first precursor upward along the side surface so that the first precursor covers the side surface at least in some places. In particular, the first precursor is sprayed onto the carrier so that the first precursor is in direct physical contact with the side surface. Preferably, the amount of the first precursor applied is such that at least 75% (e.g., at least 90%) of the side surface is covered by the first precursor.
[0020] If the first precursor is dispensed at a distance from the side, it is advantageously prevented that the top surface of the semiconductor chip is covered with the first precursor (and thus the transparent resin). In particular, the top surface is free of the first precursor and, after curing, free of the transparent resin. In this way, only the necessary amount of the first precursor is applied.
[0021] According to an embodiment of the method, applying the second precursor comprises: dispensing the second precursor onto the carrier at a distance from the side. Preferably, the second precursor creeps between the carrier and the first precursor. In particular, the second precursor is dispensed at a distance from the first precursor. In this way, it can be ensured that the first precursor is not covered by the second precursor.
[0022] According to an embodiment of the method, the first precursor comprises or consists of a first polysiloxane. In particular, the first precursor is silicone. Preferably, the first precursor is free of particles, such as scattering particles.
[0023] According to an embodiment of the method, the second precursor comprises a second polysiloxane and scattering particles. In particular, the second precursor is a silicone resin. Preferably, the second polysiloxane is different from the first polysiloxane.
[0024] Advantageously, the first polysiloxane and the second polysiloxane can be cured without damaging the semiconductor chip.
[0025] According to an embodiment of the method, the second precursor and / or the reflective resin comprises at least 10 wt%, preferably at least 20 wt%, for example about 30 wt% of scattering particles.
[0026] According to an embodiment of the method, the first polysiloxane and the second polysiloxane are immiscible. In other words, the first polysiloxane and the second polysiloxane do not mix. In particular, a boundary surface is formed between the first precursor and the second precursor and between the transparent resin and the reflective resin. In this way, it is ensured that the second precursor is prevented from covering the side of the semiconductor chip until the top surface. Therefore, it is advantageously possible to prevent brightness loss.
[0027] According to an embodiment of the method, the side of the semiconductor chip is partially free of the second precursor and / or the reflective resin. In other words, only a portion of the side is covered with the second precursor and the reflective resin. In particular, the side is covered with the second precursor and / or the reflective resin to a certain height, for example, up to 50% of the height of the semiconductor chip.
[0028] Furthermore, an optoelectronic component is specified. Preferably, the optoelectronic component is manufactured by the method described herein. Therefore, all features and embodiments of the method apply to the optoelectronic component, and all features and embodiments of the optoelectronic component apply to the method.
[0029] According to an embodiment, the optoelectronic component comprises a carrier with a semiconductor chip. In particular, the carrier comprises or consists of an epoxy molding compound. The semiconductor chip is configured to emit electromagnetic radiation. The semiconductor chip comprises: a chip mounting surface, a top surface opposite to the chip mounting surface, and a side surface arranged between the chip mounting surface and the top surface. In particular, the top surface is the main emission surface of the semiconductor chip. The semiconductor chip is mounted on the carrier via the chip mounting surface. In particular, at least one semiconductor chip, preferably at least two semiconductor chips, for example four semiconductor chips are mounted on the carrier. Advantageously, the carrier is designed to mechanically stabilize the semiconductor chip. In addition, the semiconductor chip can be electrically contacted via the carrier.
[0030] According to an embodiment, the carrier comprises a cavity. In particular, the semiconductor chip is arranged at a bottom surface of the cavity. The cavity increases the radiation outcoupling of the optoelectronic component and thus improves the efficiency of the optoelectronic component.
[0031] According to an embodiment, the optoelectronic component comprises a transparent resin which covers the sides of the semiconductor chip at least in some places. Preferably, the transparent resin is transparent to the electromagnetic radiation emitted by the semiconductor chip. For example, the transparent resin transmits at least 85%, at least 90% or at least 95% of the electromagnetic radiation emitted by the semiconductor chip. In particular, the transparent resin is free of scattering particles or fillers. For example, the top surface of the semiconductor chip is free of the transparent resin.
[0032] According to an embodiment, the optoelectronic component includes a reflective resin that covers the sides of the semiconductor chip only in certain places. In particular, the reflective resin is in direct physical contact with the transparent resin. In other words, the transparent resin and the reflective resin share a common interface. Preferably, the reflective resin is diffusely reflective. For example, the reflective resin appears white in daylight. Advantageously, the reflective resin increases the brightness of the optoelectronic component.
[0033] According to an embodiment of the optoelectronic component, the reflective resin is arranged between the carrier and the transparent resin. In particular, the transparent resin covers the reflective resin at least in some places. Due to this structure, preferably, the side of the semiconductor chip is free of reflective resin in some places. Therefore, the outcoupling efficiency of the optoelectronic component is improved.
[0034] According to an embodiment, an optoelectronic component includes: a carrier having a semiconductor chip configured to emit electromagnetic radiation, wherein the semiconductor chip includes: a chip mounting surface, a top surface opposite to the chip mounting surface, and a side surface arranged between the chip mounting surface and the top surface, and wherein the semiconductor chip is mounted on the carrier through the chip mounting surface; a transparent resin, which is transparent to the electromagnetic radiation emitted by the semiconductor chip and covers the side surface at least in some places; and a reflective resin, which is in direct physical contact with the transparent resin and covers the side surface only in some places, and wherein the reflective resin is arranged between the carrier and the transparent resin.
[0035] According to an embodiment of the optoelectronic component, the transparent resin and the reflective resin are in direct physical contact with the side of the semiconductor chip. In particular, the semiconductor chip is completely surrounded by the reflective resin. In this way, the carrier around the semiconductor chip can be completely covered with the reflective resin and thus avoid the carrier absorbing electromagnetic radiation emitted by the semiconductor chip.
[0036] According to an embodiment of the optoelectronic component, less than 50% of the side surface is covered by the reflective resin. In particular, less than 50% of the height of the side surface of the semiconductor chip is covered with the reflective resin. Compared to an optoelectronic component in which the side surface of the semiconductor chip is completely covered with the reflective resin, the brightness of the optoelectronic component can be advantageously increased because less radiation exit area is covered by the reflective resin.
[0037] According to an embodiment of the optoelectronic component, the reflective resin comprises scattering particles. In particular, the diffuse reflective property of the reflective resin comes from the scattering particles. Preferably, the scattering particles are, for example, inorganic particles comprising a high refractive index. For example, the scattering particles are achromatic particles. Preferably, the scattering particles comprise or consist of a material selected from the group comprising oxides, sulfates, sulfides, carbonates and combinations thereof.
[0038] According to an embodiment of the optoelectronic component, the scattering particles comprise or consist of a material selected from the group comprising: TiO2, ZrO2, BaSO4 and mixtures thereof. In particular, these materials are achromatic and comprise a high refractive index.
[0039] According to an embodiment of the optoelectronic component, the transparent resin includes a first cured polysiloxane. Preferably, the first cured polysiloxane is made of the first polysiloxane in the first precursor of the method described herein. For example, the first cured polysiloxane is a silicone resin. In particular, the silicone resin is constructed by an M unit (R3SiO-) and a D unit (-OSiR2O-).
[0040] According to an embodiment of the optoelectronic component, the reflective resin comprises a second cured polysiloxane, such as silicone resin. Preferably, the second cured polysiloxane is made from the second polysiloxane in the second precursor of the method described herein. In particular, the scattering particles are uniformly distributed in the second cured polysiloxane.
[0041] According to an embodiment of the optoelectronic component, the first cured polysiloxane is different from the second cured polysiloxane. In this way, preferably, mixing of the transparent resin with the reflective resin during the manufacture of the optoelectronic component is prevented. Therefore, the reflective resin only covers the side of the semiconductor chip in certain places.
[0042] According to an embodiment of the optoelectronic component, the reflective resin is bent into the transparent resin. In particular, in a region where the reflective resin is covered by the transparent resin, the thickness of the reflective resin includes a maximum value.
[0043] According to an embodiment of the optoelectronic component, the contact angle (γ) between the side and the reflective resin is at least 90°. In particular, a contact angle below 90° results in complete wetting of the side by the reflective resin. In particular, when the contact angle is at least 90°, the side is not completely wetted by the reflective resin. Preferably, a contact angle of at least 90° enables the optoelectronic component to have a semiconductor chip that is only covered in some places by the reflective resin and thus has an increased brightness.
[0044] According to an embodiment of the optoelectronic component, the carrier comprises a base at the bottom surface. In particular, the semiconductor chip is arranged on the base so that a space is formed between the bottom surface of the carrier and the semiconductor chip. For example, the base is a support or a solder joint of the carrier. Preferably, if the carrier comprises a cavity, the base is arranged at the bottom surface of the cavity.
[0045] According to an embodiment of the optoelectronic component, a reflective layer is arranged in the space between the bottom surface and the semiconductor chip. In particular, the reflective layer increases the radiation outcoupling output of the optoelectronic component, since the radiation emitted by the semiconductor chip in the direction toward the carrier is reflected by the reflective layer. In particular, this effect cannot be achieved by other optoelectronic components that include a barrier ring around the semiconductor chip, which prevents the reflective resin from filling the space between the bottom surface and the semiconductor chip and thus prevents the formation of the reflective layer.
[0046] According to an embodiment of the optoelectronic component, the reflective layer comprises scattering particles. That is, the reflective layer is preferably diffusely reflective. In particular, the scattering particles of the reflective layer comprise achromatic materials and / or inorganic materials, such as TiO2, ZrO2, BaSO4 and mixtures thereof.
[0047] According to an embodiment of the optoelectronic component, the top side of the semiconductor chip is free of transparent resin. If the top side is free of transparent resin, the outcoupling efficiency of the optoelectronic component can be increased.
[0048] According to an embodiment of the optoelectronic component, the reflective resin is free of the transparent resin in some places. In other words, the transparent resin does not completely cover the reflective resin. In particular, the transparent resin only covers the reflective resin in the area around the semiconductor chip.
[0049] According to an embodiment of the optoelectronic component, the side surface comprises sapphire or consists of sapphire. That is to say, the semiconductor chip is, for example, a sapphire chip. In particular, the semiconductor chip is a flip chip.
[0050] In particular, the flip chip comprises a substrate on which a semiconductor layer sequence with a radiation generating active region is epitaxially grown. The substrate is usually transmissive at least for the electromagnetic radiation generated in the active region. Preferably, the side surface of the substrate forms part of the radiation exit region of the semiconductor chip. In particular, the side surface of the semiconductor chip is at least partially formed by the side surface of the substrate. On the back side of the flip chip, two electrical contacts are usually arranged, which are provided for electrical contacting of the semiconductor chip. Preferably, the front side of the flip chip has no electrical contacts.
[0051] According to an embodiment of the optoelectronic component, the reflective resin covers the sidewalls of the cavity at least in some places. Preferably, the reflective resin also covers the bottom surface of the cavity that is not covered by the semiconductor chip. In other words, the bottom surface of the cavity can be completely covered by the semiconductor chip and the reflective resin.
[0052] From the exemplary embodiments described below in conjunction with the drawings, advantageous embodiments and developments of a method for producing an optoelectronic component will become apparent.
[0053] In the attached picture:
[0054] Figures 1 to 5 Schematic cross-sectional views showing stages of a method for producing an optoelectronic component according to an exemplary embodiment are shown.
[0055] Figure 6 A schematic cross-sectional view of an optoelectronic component according to a comparative embodiment is shown.
[0056] Figure 7 A schematic cross-sectional view of an optoelectronic component according to an exemplary embodiment is shown.
[0057] Figure 8 An image showing laboratory testing of a method for manufacturing an optoelectronic component.
[0058] Fig. 9 An image of an optoelectronic component according to an exemplary embodiment is shown.
[0059] Fig.10 A scanning electron microscope (SEM) image of a cross section of an optoelectronic component according to an exemplary embodiment is shown.
[0060] Fig.11 A schematic diagram of an optoelectronic component according to an exemplary embodiment is shown.
[0061] Fig.12 A schematic cross-sectional view of an optoelectronic component according to an exemplary embodiment is shown.
[0062] Fig.13 A schematic cross-sectional view of an optoelectronic component according to an exemplary embodiment is shown.
[0063] In the exemplary embodiments and the accompanying drawings, components that are similar or have similar functions are provided with the same reference numerals. The elements shown in the accompanying drawings and their dimensional relationships to each other should not be considered as true proportions. On the contrary, for better representation and / or for better understanding, the individual elements may be represented by exaggerated dimensions.
[0064] according to Figures 1 to 5 According to an exemplary embodiment of a method for manufacturing an optoelectronic component 10, a carrier 1 (not shown) having a semiconductor chip 2 configured to emit electromagnetic radiation is provided. The semiconductor chip 2 includes a chip mounting surface 3. The semiconductor chip 2 is mounted on the carrier 1 via the chip mounting surface 3. The semiconductor chip 2 also includes a top surface 4 opposite to the chip mounting surface 3. In particular, the top surface 4 is the main emission surface of the semiconductor chip 2. The side surface 5 is arranged between the chip mounting surface 3 and the top surface 4. Preferably, the semiconductor chip 2 includes the form of a cube. In this case, the side surface 5 is formed by the four sides of the cube.
[0065] The first precursor 6 is applied to the carrier 1 so that the first precursor 6 is in direct physical contact with the side surface 5 ( Figure 1 ). In particular, the first precursor 6 is applied around the semiconductor chip 2 on the carrier 1. The first precursor 6 is applied by dispensing, in particular by spraying. The first precursor 6 includes a first polysiloxane and has no scattering particles or fillers. For example, a silicone elastomer cured at a temperature of about 150° C. is used as the first polysiloxane.
[0066] like Figure 2 As shown, the first precursor 6 creeps upward along the side surface 5, so that the first precursor 6 covers the side surface 5 at least in some places. In particular, the first precursor 6 completely covers the side surface 5. Preferably, the first precursor 6 occupies the side surface 5 in advance.
[0067] like Figure 3 As shown, a second precursor 7 is applied on a carrier 1. The second precursor 7 is applied on the carrier by spraying at a certain distance from the semiconductor chip 2 and the first precursor 6. In particular, the second precursor 7 is applied around the semiconductor chip 2 and the first precursor 6. The second precursor 7 includes a second polysiloxane and scattering particles 18. The first polysiloxane of the first precursor 6 and the second polysiloxane of the second precursor 7 are different from each other. The first precursor 6 and the second precursor 7 are incompatible. The scattering particles 18 include an achromatic inorganic material, such as TiO2, ZrO2 or BaSO4. For example, silicone resin is used as the second polysiloxane, and a density of 4.0 g / cm 3 And TiO2 particles having a TiO2 content of at least 92.5% are used as scattering particles 18. The second precursor 7 currently comprises scattering particles 18 of about 35 wt%.
[0068] like Figure 4 As shown, after dispensing the second precursor 7 on the carrier 1, the second precursor 7 creeps between the carrier 1 and the first precursor 6. That is, the second precursor 7 creeps under the first precursor 6. This can be explained that the second precursor 7 includes a higher density than the first precursor 6 due to the components of the scattering particles 18 and / or the second polysiloxane.
[0069] The second precursor 7 creeps upward along the side 5 so that the second precursor 7 covers only a portion of the side 5. The other portion of the side 5 is covered by the first precursor 6. This effect can be explained by the following two mechanisms:
[0070] The first precursor 6 can change the contact angle between the second precursor 7 and the side 5 from wetting to non-wetting. In particular, the wetting contact angle is at most 90°. For example, the non-wetting contact angle is at least 90°.
[0071] Furthermore, the first front body 6 provides weight to the second front body 7. In this way, the second front body 7 is prevented from creeping up along the side surface 5, in particular from completely covering the side surface 5.
[0072] The curing of the first precursor 6 and the second precursor 7 at, for example, an elevated temperature (e.g., at least 50° C., at least 80° C., or at least 100° C.) results in the formation of a transparent resin 8 and a reflective resin 9. In this way, an optoelectronic component 10 is manufactured. The first precursor 6 is cured to form a transparent resin 8, while the second precursor 7 is cured to form a reflective resin 9. The transparent resin 8 is transparent to the electromagnetic radiation emitted by the semiconductor chip 2. The transparent resin 8 and the reflective resin 9 are in direct physical contact with each other. In addition, the transparent resin 8 and the reflective resin 9 are in direct physical contact with the side 5. Therefore, the transparent resin 8 and the reflective resin 9 each cover the side 5 in some places. In addition, the reflective resin 9 is in direct physical contact with the carrier 1. The transparent resin 8 covers only a portion of the reflective resin 9. The top surface 5 of the semiconductor chip 2 is free of the transparent resin 8 and the reflective resin 9.
[0073] Figure 6 An optoelectronic component 10 according to a comparative example is shown. The optoelectronic component 10 comprises a carrier 1 and a semiconductor chip 2 arranged on the carrier 1 via its chip mounting surface 3. The semiconductor chip 2 comprises a side surface 5, which is arranged between the chip mounting surface 3 and a top surface 4, which is opposite to the chip mounting surface 3. The side surface 5 is completely covered with a reflective resin 9, which comprises a first cured polysiloxane and scattering particles 18. The contact angle γ between the reflective resin 9 and the side surface 5 is lower than 90°. This corresponds to the side surface 5 being completely wetted by the reflective resin 9. Due to the complete wetting of the side surface 5, the radiation emitted by the semiconductor chip 2 is emitted only via the top surface 4.
[0074] Figure 7 An optoelectronic component 10 according to an exemplary embodiment is shown. The optoelectronic component 10 includes a carrier 1 and a semiconductor chip 2 configured to emit electromagnetic radiation. The semiconductor chip 2 includes a chip mounting surface 3, a top surface 4 opposite to the chip mounting surface 3, and a side surface 5 arranged between the chip mounting surface 3 and the top surface 4. The optoelectronic component 10 also includes a transparent resin 8 and a reflective resin 9. The transparent resin 8 is transparent to the electromagnetic radiation emitted by the semiconductor chip 2. The transparent resin 8 and the reflective resin 9 each cover the side surface 5 in some places. The transparent resin 8 and the reflective resin 9 are in direct physical contact with the side surface 5. The reflective resin 9 is arranged between the carrier 1 and the transparent resin 8. A portion of the reflective resin 9 is free of the transparent resin 8. The reflective resin 9 is in direct physical contact with the carrier 1 and the transparent resin 8.
[0075] The thickness of the reflective resin 9 depends on the distance from the side 4. In particular, the reflective resin 9 bends into the transparent resin 8. That is, starting from the side 4, the thickness of the reflective resin 9 increases, reaches a maximum value, and then the thickness of the reflective resin 9 decreases, reaching a minimum value. In particular, the maximum value is in the area of the reflective resin 9 covered by the transparent resin 8.
[0076] Due to the transparent resin 8, the contact angle γ between the side surface 5 and the reflective resin 9 is at least 90°. That is, the reflective resin 9 forms a non-wetting contact angle γ with the side surface 5. Since the side surface 5 is only partially covered by the reflective resin 9, the radiation emitted by the semiconductor chip 2 leaves the semiconductor chip via the top surface 4 and the side surface 5 not covered by the reflective resin. In this way, the efficiency of the optoelectronic component 10 is improved.
[0077] exist Figure 8 , a laboratory test of a method for manufacturing an optoelectronic device 10 is shown with the aid of images. The laboratory test demonstrates the effectiveness of the method. For the laboratory test, two glass carriers 16 are stacked together with an offset. On one side (right side) of the stacked glass carriers 16, a first precursor 6 and then a second precursor 7 are applied and cured to give a transparent resin 8 and a reflective resin 9. On the other side (left side), only the second precursor 7 is applied and cured. The composition of the first precursor 6 and the second precursor 7 is related to the combination Figures 1 to 5 Same as described.
[0078] from Figure 8 As can be seen in the images of FIG. 1 , the right side of the stacked glass carrier 16 treated with the first precursor 6 and the second precursor 7 shows the side 5 of the top glass carrier 16, which is covered by the transparent resin 8 and the reflective resin 9. Therefore, only a portion of the side 5 is covered by the reflective resin 9.
[0079] In contrast, the left side of the stacked glass carrier 16 treated with only the second precursor 7 shows the side 5 of the top glass carrier 16 being completely covered by the reflective resin 9 .
[0080] Fig. 9 An image of a cross section of an optoelectronic component 10 according to an exemplary embodiment is shown. The optoelectronic component 10 comprises two semiconductor chips 2 and a carrier 1. The carrier 1 is now completely covered 5 by the semiconductor chips 2 and a reflective resin 9. The semiconductor chips 2 each comprise a side surface 5. The side surfaces 5 are covered by the reflective resin 9 and a transparent resin 8. The side surfaces 5 are only partially covered by the reflective resin 9.
[0081] exist Fig.10 , a SEM image of a cross section of an optoelectronic component 10 according to an exemplary embodiment is shown. In particular, Fig.10 Shows Fig. 9 A cross-sectional view of an optoelectronic component 10 is shown.
[0082] Fig.10 The optoelectronic component 10 comprises a carrier 1. A semiconductor chip 2 configured to emit electromagnetic radiation is mounted on the carrier 1 via a chip mounting area 3. The semiconductor chip 2 further comprises a top surface 4 opposite the chip mounting area 3 and a side surface 5 arranged between the chip mounting area 3 and the top surface 4.
[0083] The side surface 5 and the carrier 1 are in direct physical contact with the reflective resin 9. The reflective resin 9 includes a first cured polysiloxane and scattering particles 18, for example, the scattering particles 18 include TiO2 or consist of TiO2. In particular, the reflective resin 9 includes a cured silicone resin and a density of 4.0 g / cm 3 The TiO2 content is at least 92.5% of TiO2 particles. Currently, the reflective resin 9 includes about 35 wt% of scattering particles 18. Less than 50% of the side 5 is covered by the reflective resin 9. In particular, less than 50% of the height of the side 5 is covered by the reflective resin 9.
[0084] A transparent resin 8 including a silicone resin cured at a temperature of about 150° C. is arranged on the reflective resin 9. The transparent resin 8 covers a portion of the side 5 of the semiconductor chip 2. The reflective resin 9 is bent into the transparent resin 8. The transparent resin 8 and the reflective resin 9 are in direct physical contact with each other. Therefore, the transparent resin 8 and the reflective resin 9 share a common interface 17. The top surface 4 of the semiconductor chip 2 is free of the transparent resin 8 and the reflective resin 9.
[0085] exist Fig.11 , a schematic diagram of an optoelectronic component 10 according to an exemplary embodiment is shown in FIG. The optoelectronic component 10 comprises a carrier 1, which comprises an epoxy mold compound. The carrier 1 comprises a cavity 11 having a bottom surface 13 and side walls 15. On the bottom surface 13 of the cavity 11, four semiconductor chips 2 are mounted via their chip mounting surfaces 3. Each semiconductor chip 2 is configured to emit electromagnetic radiation. Each semiconductor chip 2 comprises a top surface 4 opposite to the chip mounting surface 3 and a side surface 5 arranged between the top surface 4 and the chip mounting surface 3. In particular, the side surface 4 completely surrounds the semiconductor chip 2.
[0086] The optoelectronic component 10 further includes a transparent resin 8 and a reflective resin 9, both of which are arranged in the cavity 11 of the carrier 1. The transparent resin 8 and the reflective resin 9 each cover the side surface 5 of the semiconductor chip 2 in some places. In particular, a portion of the side surface 5 is free of the reflective resin 9. The reflective resin 9 is arranged between the carrier 1 and the transparent resin 8. In addition, the reflective resin 9 is bent into the transparent resin 8. The reflective resin 9 is partially free of the transparent resin 8. The top surface 4 of the semiconductor chip 2 is free of the transparent resin 8.
[0087] like Fig.11 As shown, the bottom surface 13 and the sidewalls 15 of the cavity 11 are at least partially covered by the reflective resin 9. The reason why the reflective resin 9 partially covers the sidewalls 15 can be explained as follows: during the manufacture of the optoelectronic component 10, the precursor of the reflective resin 9 creeps up along the sidewalls until reaching a certain point.
[0088] exist Fig.12A schematic cross-sectional view of an optoelectronic component 10 according to an exemplary embodiment is shown in FIG. Fig.12 Shows Fig.11 Schematic cross-sectional view of an optoelectronic component. Fig.12 The optoelectronic component comprises a carrier 1 and a semiconductor chip 2. The semiconductor chip 2 is currently a flip chip.
[0089] The carrier 1 comprises a cavity 11 in which the semiconductor chip 2 is arranged. The cavity 11 comprises a side wall 15 and a bottom surface 13. The bottom surface 13 is currently the bottom surface of the carrier 1. At least a portion of the side wall 15 and the bottom surface 13 are covered by a reflective resin 9. The reflective resin 9 comprises a second cured polysiloxane and scattering particles 18, which for example comprise TiO2 or consist of TiO2. The thickness of the reflective resin 9 on the side wall 15 decreases with the distance away from the bottom surface 13. The reflective resin 9 is diffusely reflective.
[0090] The reflective resin 9 is partially covered by the transparent resin 8. That is, the reflective resin 9 is arranged between the transparent resin 8 and the carrier 1. The reflective resin 9 is in direct physical contact with the carrier 1 and the transparent resin 8. The transparent resin 8 includes a first cured polysiloxane and is transparent to electromagnetic radiation emitted by the semiconductor chip 2. The first cured polysiloxane and the second cured polysiloxane are different from each other.
[0091] A semiconductor chip 2 configured to emit electromagnetic radiation is arranged on a bottom surface 13 of a cavity 11 of a carrier 1. The semiconductor chip 2 includes a chip mounting surface 3, a top surface 4 opposite to the chip mounting surface 3, and a side surface 5 arranged between the chip mounting surface 3 and the top surface 4. The side surface 5 includes sapphire or consists of sapphire. The top surface 4 is free of a transparent resin 8 and a reflective resin 9. The side surface 5 is at least partially covered by the transparent resin 8 and the reflective resin 9. The reflective resin 9 covers the side surface 5 only in certain places. The thickness of the transparent resin 8 on the side surface 5 decreases as the distance from the chip mounting surface 3 increases. The thickness of the transparent resin 8 on the reflective resin 9 also decreases as the distance from the side surface 5 increases.
[0092] At present, the carrier 1 comprises a base arranged at the bottom surface 13. At present, the base is a support 19 of the carrier 1. The support 19 is a protruding feature on the bottom surface 13 of the carrier 1. The semiconductor chip 2 is arranged on the support 19. In this way, a space 12 is formed between the bottom surface 13 and the semiconductor chip 2. The space 12 is filled with a reflective layer 14. That is, the reflective layer 14 is arranged between the bottom surface 13 and the semiconductor chip 2. In particular, the reflective layer 14 at least partially fills the space 12, preferably completely fills the space 12. The reflective layer 14 is diffusely reflective. In particular, the reflective layer 14 comprises scattering particles, which include or consist of TiO2, ZrO2 or BaSO4.
[0093] Fig.13 The optoelectronic component 10 shown in FIG. 1 comprises a carrier 1 having a cavity 11 with a bottom surface 13. A single semiconductor chip 2 is arranged on the bottom surface 13 via solder joints 20. Due to the solder joints 20, a space 12 is formed between the semiconductor chip 12 and the bottom surface 13 of the carrier 1. The space 12 is filled with a reflective layer 14, which is diffusely reflective.
[0094] The side surface 5 of the semiconductor chip 2 is covered with the reflective resin 9 and the transparent resin 8. The top surface 4 of the semiconductor chip 2 is free of both the transparent resin 8 and the reflective resin 9. The transparent resin 8 covers the reflective resin 9 in some places. Therefore, the transparent resin 8 and the reflective resin 9 are in direct physical contact. The transparent resin 8 has no filler or scattering particles. The reflective resin 9 includes scattering particles 18. Therefore, the reflective resin 9 is diffusely reflective. In particular, the reflective resin 9 and the transparent resin 9 are combined with Fig.12 Same as described.
[0095] The reflective resin 9 is in direct physical contact with the bottom surface 13 and the side wall 15 of the carrier 1. That is, the reflective resin 9 is arranged between the transparent resin 8 and the carrier 1.
[0096] According to further exemplary embodiments, the features and exemplary embodiments described in conjunction with the figures may be combined with one another, although not all combinations are explicitly described. Furthermore, the exemplary embodiments described in conjunction with the figures may have alternative or additional features as described in the general part.
[0097] By describing based on the exemplary embodiments, the present invention is not limited to the exemplary embodiments. Rather, the present invention covers any new features and also covers any combination of features, even if the feature or the combination itself is not explicitly specified in the patent claims or the exemplary embodiments, the present invention also specifically includes any combination of features in the patent claims and any combination of features in the exemplary embodiments.
[0098] Reference numerals
[0099] 1 carrier
[0100] 2Semiconductor Chip
[0101] 3 Chip mounting surface
[0102] 4 Top surface
[0103] 5 Side
[0104] 6 First Precursor
[0105] 7 Second Precursor
[0106] 8 Transparent resin
[0107] 9Reflective resin
[0108] 10 Optoelectronic components
[0109] 11 Cavity
[0110] 12 Space
[0111] 13 bottom
[0112] 14Reflection layer
[0113] 15 Sidewall
[0114] 16 Glass carrier
[0115] 17 Interface
[0116] 18 Scattering particles
[0117] 19 Support
[0118] 20 soldering points
[0119] γ contact angle
Claims
1. A method for manufacturing an optoelectronic component (10), comprising: - providing a carrier (1) having a semiconductor chip (2) configured to emit electromagnetic radiation, wherein the semiconductor chip (2) comprises a chip mounting surface (2), a top surface (4) opposite the chip mounting surface (3), and a side surface (5) arranged between the chip mounting surface (3) and the top surface (4), and wherein the semiconductor chip (2) is mounted on the carrier (1) via the chip mounting surface (3), - applying a first precursor (6) on the carrier (1) such that the side surfaces (5) of the semiconductor chip (2) are at least partially covered with the first precursor (6), - applying a second precursor (7) on the carrier (1) so that the second precursor (7) creeps between the carrier (1) and the first precursor, and - curing the first precursor (6) and the second precursor (7) so that the first precursor (6) forms a transparent resin (8) and the second precursor (7) forms a reflective resin (9).
2. The method for producing an optoelectronic component (10) according to claim 1, wherein: Applying the first precursor (6) comprises: - dispensing the first precursor onto the support (1) such that the first precursor (6) is in direct physical contact with the side (5), and - creeping the first precursor (6) upwards along the side surface (5) so that the first precursor (6) covers the side surface (5) at least in places.
3. The method for producing an optoelectronic component (10) according to claim 1, wherein: Applying the second precursor (7) comprises: The second precursor (7) is dispensed on the carrier (1) at a distance from the side surface (5).
4. The method for producing an optoelectronic component (10) according to claim 1, wherein: The first precursor (6) includes a first polysiloxane.
5. Method for producing an optoelectronic component (10) according to the preceding claim, wherein: The second precursor (7) comprises a second polysiloxane and scattering particles (18), wherein the second polysiloxane is different from the first polysiloxane.
6. Method for producing an optoelectronic component (10) according to the preceding claim, wherein: The first polysiloxane and the second polysiloxane are immiscible.
7. The method for producing an optoelectronic component (10) according to claim 1, wherein: The side surface (5) is partially free of the second precursor (7) and / or the reflective resin (9).
8. The method for producing an optoelectronic component (10) according to claim 1, wherein: - the transparent resin (8) and the reflective resin (9) are in direct physical contact, and - The transparent resin (8) and the reflective resin (9) cover the side surface (5) at least in some places.
9. An optoelectronic component (10), comprising: - a carrier (1) having a semiconductor chip (2) configured to emit electromagnetic radiation, wherein the semiconductor chip (2) comprises a chip mounting surface (3), a top surface (4) opposite the chip mounting surface (3), and a side surface (5) arranged between the chip mounting surface (3) and the top surface (4), and wherein the semiconductor chip (2) is mounted on the carrier (1) via the chip mounting surface (3), a transparent resin (8) which is transparent to the electromagnetic radiation emitted by the semiconductor chip (2) and which covers the side faces (5) at least in places, and - a reflective resin (9) which is in direct physical contact with the transparent resin (8) and covers the side surfaces (5) only in certain places, wherein - The reflective resin (9) is arranged between the carrier (1) and the transparent resin (8).
10. The optoelectronic component (10) according to claim 9, wherein: The transparent resin (8) and the reflective resin (9) are in direct physical contact with the side surface (5).
11. The optoelectronic component (10) according to any one of claims 9 or 10, wherein: Less than 50% of the side surface (5) is covered by the reflective resin (9).
12. The optoelectronic component (10) according to any one of claims 9 to 11, wherein: The reflective resin (9) includes scattering particles (18).
13. The optoelectronic component (10) according to claim 12, wherein: The scattering particles (18) include a material selected from the group consisting of TiO2, ZrO2, BaSO4 and mixtures thereof.
14. The optoelectronic component (10) according to any one of claims 9 to 13, wherein: - the transparent resin (8) comprises a first cured polysiloxane, - the reflective resin (9) comprises a second cured polysiloxane, and - The first cured polysiloxane is different from the second cured polysiloxane.
15. The optoelectronic component (10) according to any one of claims 9 to 14, wherein: The reflective resin (9) is bent into the transparent resin (8).
16. The optoelectronic component (10) according to any one of claims 9 to 15, wherein: The contact angle (γ) between the side surface (5) and the reflective resin (9) is at least 90°.
17. The optoelectronic component (10) according to any one of claims 9 to 16, wherein: - the carrier (1) comprises a base (19, 20) at the bottom surface (13), - the semiconductor chip (2) is arranged on the base (19) such that a space (12) is formed between the bottom surface (13) and the semiconductor chip (2), - a reflective layer (14) is arranged in the space (12), and - The reflecting layer (14) comprises scattering particles.
18. The optoelectronic component (10) according to any one of claims 9 to 17, wherein: The top surface (4) of the semiconductor chip (2) is free of the transparent resin (8).
19. The optoelectronic component (10) according to any one of claims 9 to 18, wherein: The reflective resin (9) is free of the transparent resin (8) in some places.
20. The optoelectronic component (10) according to any one of claims 9 to 19, wherein: The side surface (5) comprises sapphire.