Welding method of semiconductor gas distribution disc

Abstract

The invention provides a welding method for a semiconductor gas distribution disc, which comprises the following steps of: fixing a base and a distribution plate of the semiconductor gas distribution disc by adopting a clamp, then determining a welding path, carrying out friction stir welding on a gap between the base and the distribution plate, and rotating a stirring head during friction stir welding. According to the welding method, heat generated by mutual friction in relative movement of the contact end faces of a weldment is utilized to enable the end faces to reach a thermoplastic state, and finally rapid upsetting is conducted to complete welding. The welding method is easy and convenient to operate, high in mechanization degree, high in welding strength and high in welding efficiency, the parallelism of the semiconductor gas distribution disc product is smaller than or equal to 0.3 mm, and the problem that welding seams are prone to cracking due to electron beam welding can be solved.

Description

Technical Field

[0001] The invention belongs to the technical field of semiconductors, and in particular relates to a welding method for a semiconductor gas distribution plate. Background Art

[0002] The plasma etching process is a crucial step in the semiconductor manufacturing process. It is a process in which plasma is generated by ionizing the reaction gas, and the generated plasma etches the film layer on the surface of the wafer. The plasma etching process usually uses a gas distribution device to deliver the reaction gas into the reaction chamber through different delivery paths, effectively avoiding the contact of easily reactive gases in the gas distribution device and eliminating the possibility of the gas reacting before entering the reaction chamber.

[0003] CN212257346U discloses a gas distribution device in a process chamber for integrated circuits, comprising a distribution seat and a cover plate, wherein an inner cavity is formed at the top of the distribution seat, and spray holes are evenly formed around the axis of the bottom wall of the distribution seat; a first sealing groove is formed on the inner side of the top wall of the distribution seat, and a first sealing ring is embedded in the first sealing groove; a cover plate is detachably connected to the top of the distribution seat, an air inlet hole is formed at the axis of the cover plate, a distribution plate is seal-welded to the bottom of the cover plate, and the bottom of the distribution plate is seal-bonded to the top of the inner cavity of the distribution seat; the distribution plate comprises a partition, an annular plate, a distribution hole, an annular protrusion and a second sealing groove, and a partition plate is seal-welded to the middle of the inner wall of the annular plate.

[0004] In the prior art, argon arc welding or electron beam welding is often used to weld the gas distribution plate. The welding temperature is relatively high, and the purpose of welding is achieved by quickly melting the filled metal and then quickly cooling it. However, the existing welding method has a low level of automation, uncontrollable human operation factors, and a long welding time. In addition, the strength of electron beam welding is not high enough, and there is a risk of cracking during use.

[0005] In summary, there is an urgent need to develop a new welding method for semiconductor gas distribution plates with high welding strength and solve the problem of easy cracking of welds in traditional welding processes. Summary of the invention

[0006] The object of the present invention is to provide a welding method for a semiconductor gas distribution plate. The welding method is easy to operate, has a high degree of mechanization, high welding strength, and high welding efficiency. The parallelism of the semiconductor gas distribution plate product is ≤0.3mm, and the weld cracking problem that is easily caused by electron beam welding can be avoided.

[0007] In order to achieve the purpose of the invention, the present invention adopts the following technical solutions:

[0008] The present invention provides a welding method for a semiconductor gas distribution plate, the welding method comprising:

[0009] A clamp is used to fix the base and the distribution plate of the semiconductor gas distribution plate, and then a welding path is determined to stir friction welding the gap between the base and the distribution plate, and the stirring head rotates during the stir friction welding.

[0010] In the present invention, the stirring head rotation specifically includes: clamping the stirring head and rotating it at high speed, and then moving the stirring head gradually toward the gap between the base and the distribution plate, and causing relative movement between the stirring head and the gap through the rotation of the stirring head.

[0011] The semiconductor gas distribution plate welding method provided by the present invention first fixes the base and the distribution plate of the gas distribution plate by a clamp, determines the welding path, stirs the gap between the base and the distribution plate with friction welding, utilizes the heat generated by the friction between the contact end faces of the weldment during the relative movement, makes the end faces reach a thermoplastic state, and finally quickly upsets to complete the welding. The welding method is easy to operate, has a high degree of mechanization, high welding strength, high welding efficiency, and the parallelism of the semiconductor gas distribution plate product is ≤0.3mm, and can also avoid the weld cracking problem that is easy to be caused by electron beam welding.

[0012] As a preferred technical solution of the present invention, before the fixing, the method further includes: performing protective treatment on the surface of the base of the semiconductor gas distribution plate.

[0013] In the present invention, the surface of the base of the semiconductor gas distribution plate is protected to avoid friction scratches caused by large forces during welding.

[0014] Preferably, the protective treatment is applying a heat-resistant tape.

[0015] In the present invention, before the protective treatment, the semiconductor gas distribution plate components are also cleaned and dried. The present invention does not specifically limit the cleaning and drying methods, and those skilled in the art can select them according to actual needs.

[0016] As a preferred technical solution of the present invention, the determining of the welding path includes: performing spot welding at the gap of the base to be welded to form a plurality of welding spots.

[0017] In the present invention, before the friction stir welding is formally carried out, the welding path needs to be determined first to avoid the risk of low welding strength and weld cracking after the gas distribution plate is welded.

[0018] Preferably, during the spot welding, the pressing amount of the stirring head is 0.1-0.2 mm, for example, it can be 0.11 mm, 0.12 mm, 0.13 mm, 0.14 mm, 0.15 mm, 0.16 mm or 0.18 mm, etc., but is not limited to the listed values, and other unlisted values ​​within the numerical range are also applicable.

[0019] Preferably, the number of the welding points is 6-10, for example, 7, 8 or 9.

[0020] As a preferred technical solution of the present invention, the residence time of the stirring head before stir friction welding is 15-30s, for example, it can be 18s, 20s, 22s, 24s, 25s, 26s or 28s, but is not limited to the listed values, and other unlisted values ​​within the numerical range are also applicable.

[0021] As a preferred technical solution of the present invention, the shoulder diameter of the stirring head is 12-16mm, for example, it can be 12.5mm, 13mm, 13.5mm, 14mm, 14.5mm, 15mm or 15.5mm, but is not limited to the listed values, and other unlisted values ​​within the numerical range are also applicable.

[0022] Preferably, the forward inclination angle of the stirring head is 10-15°, for example, it can be 10.5°, 11°, 11.5°, 12°, 12.5°, 13°, 13.5°, 14° or 14.5°, etc., but is not limited to the listed values, and other unlisted values ​​within the numerical range are also applicable.

[0023] Preferably, the pressing amount of the stirring head is 10-25 mm, for example, it can be 12 mm, 15 mm, 16 mm, 14 mm, 18 mm, 20 mm, 22 mm or 24 mm, but is not limited to the listed values, and other unlisted values ​​within the numerical range are also applicable.

[0024] As a preferred technical solution of the present invention, a stirring needle is provided on the stirring head.

[0025] Preferably, the diameter of the stirring needle is 10-15 mm, for example, it can be 10.5 mm, 11 mm, 11.5 mm, 12 mm, 12.5 mm, 13 mm, 13.5 mm, 14 mm or 14.5 mm, but is not limited to the listed values, and other unlisted values ​​within the numerical range are also applicable.

[0026] Preferably, the length of the stirring needle is 3-5 mm, for example, it can be 3.2 mm, 3.5 mm, 3.8 mm, 4 mm, 4.2 mm, 4.5 mm or 14.5 mm, etc., but is not limited to the listed values, and other unlisted values ​​within the numerical range are also applicable.

[0027] As a preferred technical solution of the present invention, the rotation speed of the stirring head is 1000-1200mm / min, for example, it can be 1020mm / min, 1050mm / min, 1080mm / min, 1100mm / min, 1120mm / min, 1150mm / min or 1180mm / min, but is not limited to the listed values, and other unlisted values ​​within the numerical range are also applicable.

[0028] As a preferred technical solution of the present invention, the welding time of the stir friction welding is 240-300s, for example, it can be 245s, 250s, 255s, 260s, 265s, 270s, 275s, 280s or 290s, but is not limited to the listed values, and other unlisted values ​​within the numerical range are also applicable.

[0029] As a preferred technical solution of the present invention, after the stir friction welding, the parallelism of the semiconductor gas distribution plate is ≤0.3mm, for example, it can be 0.28mm, 0.25mm, 0.22mm, 0.2mm, 0.18mm, 0.15mm or 0.1mm, etc., but is not limited to the listed values, and other unlisted values ​​within the numerical range are also applicable.

[0030] As a preferred technical solution of the present invention, the welding method comprises:

[0031] The surface of the base of the semiconductor gas distribution plate is protected, the base and the distribution plate of the semiconductor gas distribution plate are fixed with a clamp, and then the welding path is determined, and then the gap between the base and the distribution plate is subjected to stir friction welding for 240-300 seconds. During the stir friction welding, the pressing amount of the stirring head is 10-25mm, and the stirring head rotates at a speed of 1000-1200mm / min;

[0032] Determining the welding path includes: spot welding at the gap of the base to be welded to form a plurality of welding spots;

[0033] The residence time of the stirring head before the friction stir welding is 15-30s;

[0034] The shoulder diameter of the stirring head is 12-16 mm, and the forward inclination angle is 10-15°;

[0035] The stirring head is provided with a stirring needle; the diameter of the stirring needle is 10-15 mm and the length is 3-5 mm;

[0036] After the friction stir welding, the parallelism of the semiconductor gas distribution plate is ≤0.3 mm.

[0037] Compared with the prior art, the present invention has the following beneficial effects:

[0038] The welding method provided by the present invention fixes the base and the distribution plate of the gas distribution plate, determines the welding path, and then stirs the gap between the base and the distribution plate to perform friction welding, utilizes the heat generated by the mutual friction during the relative movement of the contact end faces of the weldment, makes the end faces reach a thermoplastic state, and finally quickly top forges to complete the welding; the welding method is easy to operate, has a high degree of mechanization, high welding strength, high welding efficiency, the parallelism of the semiconductor gas distribution plate product is ≤0.3mm, and can also avoid the problem of weld cracking that is easily caused by electron beam welding. DETAILED DESCRIPTION

[0039] The technical solution of the present invention is further described below by specific implementation methods. It should be understood by those skilled in the art that the embodiments are only to help understand the present invention and should not be regarded as specific limitations of the present invention.

[0040] Example 1

[0041] This embodiment provides a welding method for a semiconductor gas distribution plate, the welding method comprising the following steps:

[0042] (1) Cleaning and drying the base and the distribution plate of the semiconductor gas distribution plate in sequence, and then applying a heat-resistant tape to the surface of the base of the semiconductor gas distribution plate;

[0043] (2) A press plate fixture is used to fix the base and the distribution plate of the semiconductor gas distribution plate, and then the welding path is determined. Then, the gap between the base and the distribution plate is subjected to friction stir welding for 270 seconds. During the friction stir welding, the pressing amount of the stirring head is 18 mm, and the stirring head rotates at a speed of 1100 mm / min;

[0044] The determining of the welding path includes: spot welding at the gap of the base to be welded, controlling the pressing amount of the stirring head to be 0.1 mm, and forming 8 evenly distributed welding spots;

[0045] The residence time of the stirring head before the friction stir welding is 22s;

[0046] The shoulder diameter of the stirring head is 14 mm, and the forward inclination angle is 12°;

[0047] The stirring head is provided with a stirring needle; the diameter of the stirring needle is 12 mm and the length is 4 mm.

[0048] Example 2

[0049] This embodiment provides a welding method for a semiconductor gas distribution plate, the welding method comprising the following steps:

[0050] (1) Cleaning and drying the base and the distribution plate of the semiconductor gas distribution plate in sequence, and then applying a heat-resistant tape to the surface of the base of the semiconductor gas distribution plate;

[0051] (2) A press plate fixture is used to fix the base and the distribution plate of the semiconductor gas distribution plate, and then the welding path is determined. Then, the gap between the base and the distribution plate is subjected to friction stir welding for 240 seconds. During the friction stir welding, the pressing amount of the stirring head is 25 mm, and the stirring head rotates at a speed of 1200 mm / min;

[0052] The determining of the welding path includes: spot welding at the gap of the base to be welded, controlling the pressing amount of the stirring head to be 0.15 mm, and forming 6 evenly distributed welding spots;

[0053] The residence time of the stirring head before the friction stir welding is 15s;

[0054] The shoulder diameter of the stirring head is 16 mm, and the forward inclination angle is 10°;

[0055] The stirring head is provided with a stirring needle; the diameter of the stirring needle is 14 mm and the length is 3 mm.

[0056] Example 3

[0057] This embodiment provides a welding method for a semiconductor gas distribution plate, the welding method comprising the following steps:

[0058] (1) Cleaning and drying the base and the distribution plate of the semiconductor gas distribution plate in sequence, and then applying a heat-resistant tape to the surface of the base of the semiconductor gas distribution plate;

[0059] (2) A press plate fixture is used to fix the base and the distribution plate of the semiconductor gas distribution plate, and then the welding path is determined. Then, the gap between the base and the distribution plate is subjected to friction stir welding for 300 seconds. During the friction stir welding, the pressing amount of the stirring head is 10 mm, and the stirring head rotates at a speed of 1000 mm / min;

[0060] The determining of the welding path includes: spot welding at the gap of the base to be welded, controlling the pressing amount of the stirring head to be 0.2 mm, and forming 10 evenly distributed welding spots;

[0061] The residence time of the stirring head before the friction stir welding is 30s;

[0062] The shoulder diameter of the stirring head is 12 mm, and the forward inclination angle is 15°;

[0063] The stirring head is provided with a stirring needle; the diameter of the stirring needle is 10 mm and the length is 5 mm.

[0064] Example 4

[0065] This embodiment provides a welding method for a semiconductor gas distribution plate. Except that the forward inclination angle of the stirring head during friction stir welding in step (2) is 5°, other conditions are the same as those in Embodiment 1.

[0066] Example 5

[0067] This embodiment provides a welding method for a semiconductor gas distribution plate. Except that the pressing amount of the stirring head during the friction stir welding in step (2) is 5 mm, other conditions are the same as those in Example 1.

[0068] Example 6

[0069] This embodiment provides a welding method for a semiconductor gas distribution plate. Except that the pressing amount of the stirring head during the friction stir welding in step (2) is 35 mm, other conditions are the same as those in Example 1.

[0070] Example 7

[0071] This embodiment provides a welding method for a semiconductor gas distribution plate. Except that the rotation speed of the stirring head during the friction stir welding in step (2) is 800 mm / min, other conditions are the same as those in Embodiment 1.

[0072] Example 8

[0073] This embodiment provides a welding method for a semiconductor gas distribution plate. Except that the rotation speed of the stirring head during the friction stir welding in step (2) is 1500 mm / min, other conditions are the same as those in Example 1.

[0074] Example 9

[0075] This embodiment provides a welding method for a semiconductor gas distribution plate. Except that the time of the friction stir welding in step (2) is 200 seconds, other conditions are the same as those in Embodiment 1.

[0076] Example 10

[0077] This embodiment provides a welding method for a semiconductor gas distribution plate. Except that the time of the friction stir welding in step (2) is 400 seconds, other conditions are the same as those in Embodiment 1.

[0078] Comparative Example 1

[0079] This comparative example provides a method for welding a semiconductor gas distribution plate. Except that the stirring head and the base are fixed in step (2) and the distribution plate is rotated at a speed of 1100 mm / min, other conditions are the same as those in Example 1.

[0080] The semiconductor gas distribution plates after welding in the above-mentioned embodiment and comparative example were removed, and the appearance of the welds was inspected and the parallelism was tested. The results are shown in Table 1.

[0081] Table 1

[0082]

[0083]

[0084] From Table 1, we can see that:

[0085] (1) The welding method provided in Examples 1-3 of the present invention performs friction stir welding on the gap between the base and the distribution plate, and has high welding strength and high welding efficiency. The parallelism of the obtained gas distribution plate product is ≤0.3mm, and there is no cracking at the welding point, and there are no defects such as holes and cracks;

[0086] (2) It can be seen from the comparison between Example 1 and Example 4 that when the forward inclination angle of the stirring head is too small during friction stir welding, the stirring and heat input of the material in the welding area are affected, thereby causing the flatness of the welding area to decrease; it can be seen from the comparison between Example 1 and Examples 5-6 that when the pressing amount of the stirring head is too low during friction stir welding, the contact between the stirring needle and the workpiece is poor and the heat input is insufficient, resulting in uneven material flow, thereby affecting the flatness of the welding area; when the pressing amount of the stirring head is too high during friction stir welding, the amount of flash on the weld surface increases, resulting in a decrease in welding strength, and there is also a risk of excessive deformation of the welding area;

[0087] (3) It can be seen from the comparison between Example 1 and Examples 7-8 that when the rotation speed of the stirring head is too slow during friction stir welding, metal overflows to form flash, resulting in metal loss inside the weld and forming holes; when the rotation speed of the stirring head is too fast during friction stir welding, the heat input is too small, resulting in hole defects inside the weld;

[0088] (4) It can be seen from the comparison between Example 1 and Examples 9-10 that when the friction stir welding time is too short, the heat input is insufficient, resulting in hole defects inside the weld; when the friction stir welding time is too long, the material flow is uneven, thereby affecting the flatness of the welding area;

[0089] (5) By comparing Example 1 with Comparative Example 1, it can be seen that during the friction stir welding process, the distribution plate is rotated to fix the stirring head and the base, which affects the heat input and causes hole defects inside the weld.

[0090] The applicant declares that the present invention illustrates the detailed structural features of the present invention through the above-mentioned embodiments, but the present invention is not limited to the above-mentioned detailed structural features, that is, it does not mean that the present invention must rely on the above-mentioned detailed structural features to be implemented. Those skilled in the art should understand that any improvement of the present invention, equivalent replacement of the components selected by the present invention, addition of auxiliary components, selection of specific methods, etc., all fall within the protection scope and disclosure scope of the present invention.

Claims

1. A method for welding a semiconductor gas distribution plate, characterized in that: The welding method comprises: A clamp is used to fix the base and the distribution plate of the semiconductor gas distribution plate, and then a welding path is determined to stir friction welding the gap between the base and the distribution plate, and the stirring head rotates during the stir friction welding.

2. The welding method according to claim 1, characterized in that: Before the fixing, the method further comprises: performing protective treatment on the surface of the base of the semiconductor gas distribution plate; Preferably, the protective treatment is applying a heat-resistant tape.

3. The welding method according to claim 1 or 2, characterized in that: Determining the welding path includes: spot welding at the gap of the base to be welded to form a plurality of welding spots; Preferably, during the spot welding, the pressing amount of the stirring head is 0.1-0.2 mm; Preferably, the number of the welding points is 6-10.

4. The welding method according to any one of claims 1 to 3, characterized in that: The residence time of the stirring head before the friction stir welding is 15-30s.

5. The welding method according to any one of claims 1 to 4, characterized in that: The shoulder diameter of the stirring head is 12-16 mm; Preferably, the forward inclination angle of the stirring head is 10-15°; Preferably, the pressing amount of the stirring head is 10-25 mm.

6. The welding method according to any one of claims 1 to 5, characterized in that: The stirring head is provided with a stirring needle; Preferably, the diameter of the stirring needle is 10-15 mm; Preferably, the length of the stirring needle is 3-5 mm.

7. The welding method according to any one of claims 1 to 6, characterized in that: The stirring head rotates at a speed of 1000-1200 mm / min.

8. The welding method according to any one of claims 1 to 7, characterized in that: The welding time of the friction stir welding is 240-300s.

9. The welding method according to any one of claims 1 to 8, characterized in that: After the friction stir welding, the parallelism of the semiconductor gas distribution plate is ≤0.3 mm.

10. The welding method according to any one of claims 1 to 9, characterized in that: The welding method comprises: The surface of the base of the semiconductor gas distribution plate is protected, the base and the distribution plate of the semiconductor gas distribution plate are fixed with a clamp, and then the welding path is determined, and then the gap between the base and the distribution plate is subjected to stir friction welding for 240-300 seconds. During the stir friction welding, the pressing amount of the stirring head is 10-25mm, and the stirring head rotates at a speed of 1000-1200mm / min; Determining the welding path includes: spot welding at the gap of the base to be welded to form a plurality of welding spots; The residence time of the stirring head before the friction stir welding is 15-30s; The shoulder diameter of the stirring head is 12-16 mm, and the forward inclination angle is 10-15°; The stirring head is provided with a stirring needle; the diameter of the stirring needle is 10-15 mm and the length is 3-5 mm; After the friction stir welding, the parallelism of the semiconductor gas distribution plate is ≤0.3 mm.

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