Laser chip packaging material, preparation method and application thereof

Abstract

The application relates to the lighting technical field and discloses a laser chip packaging material and a preparation method and application thereof. The laser chip packaging material comprises the following raw materials in parts by weight: 40-60 parts of powder, 0.2-0.3 parts of sintering modifier, 7-8 parts of sintering aid, 15-25 parts of binder, 20-30 parts of deionized water, 1-2 parts of dispersing agent, 0.6-1.2 parts of plasticizing agent and 0.2-0.6 parts of bubble removing agent; wherein the powder comprises alumina hollow spheres, Al2O3, Y2O3, CeO2, ZnO and ZrO2. The alumina hollow spheres are matched with components with fluorescence effect, the light color can be adjusted, the light emission angle can be adjusted, the light emission efficiency is effectively improved, the laser chip can work under the condition of high power, and the laser chip can be well applied to the fields of high-pole lighting and the like.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of lighting, in particular to a laser chip packaging material and a preparation method and application thereof. BACKGROUND

[0002] The most widely used LED lighting product in the market currently adopts a LED chip as a light-emitting element. With the increase of power, the heat generated is also increased. Higher heat can easily lead to a decrease in light output of the LED chip, and even the phenomenon of failure of the LED chip. Therefore, the power of the existing LED lighting product does not exceed 200W, and the light output efficiency is 100-120 lm / W, which is difficult to meet the use demand in the market of high power and high lumens, especially in some large-area application scenarios, such as the application in the fields of stadiums, ports, wharfs, high-pole lighting, etc.

[0003] Laser lighting can meet the lighting demand of high power. However, the parallel light beam emitted by the light-emitting element (i.e. laser chip) limits its application in the fields of high-pole lighting, etc. SUMMARY

[0004] The main purpose of the present application is to provide a laser chip packaging material and a preparation method and application thereof, aiming at solving the problem that the parallel light beam emitted by the light-emitting element limits the application of laser lighting in the fields of high-pole lighting, etc.

[0005] To achieve the above-mentioned purpose, the present application provides a laser chip packaging material, which comprises the following raw materials in parts by weight:

[0006] 40-60 parts of powder;

[0007] 0.2-0.3 parts of sintering modifier;

[0008] 7-8 parts of sintering aid;

[0009] 15-25 parts of binder;

[0010] 20-30 parts of deionized water;

[0011] 1-2 parts of dispersant;

[0012] 0.6-1.2 parts of plasticizer;

[0013] 0.2-0.6 parts of defoaming agent;

[0014] The powder includes alumina hollow spheres, Al2O3, Y2O3, CeO2, ZnO and ZrO2, and the weight ratio of the alumina hollow spheres, Al2O3, Y2O3, CeO2, ZnO and ZrO2 is (58-82):(10-12):(5-8):(0.05-0.15):(0.04-0.07):(0.20-0.30).

[0015] Optionally, the laser chip packaging material includes the following raw materials by weight:

[0016] Powder 50-60 parts;

[0017] Sintering modifier 0.2-0.25 parts;

[0018] Sintering aid 7-7.5 parts;

[0019] Binder 15-20 parts;

[0020] Deionized water 20-25 parts;

[0021] Dispersant 1-1.5 parts;

[0022] Plasticizer 0.6-1 part;

[0023] Defoaming agent 0.2-0.4 parts.

[0024] Optionally, the amount of alumina hollow spheres accounts for 78-82% of the weight of the powder.

[0025] Preferably, the amount of alumina hollow spheres accounts for 80.1% of the weight of the powder.

[0026] Optionally, the particle size of the alumina hollow spheres is 0.2-5mm, and the bulk density is 0.5-1g / cm 3 .

[0027] Optionally, the sintering modifier includes CaO; and / or,

[0028] The sintering aid includes tetraethyl orthosilicate and MgO.

[0029] Optionally, the binder includes PVA aqueous solution; and / or,

[0030] The dispersant includes polyacrylamide; and / or,

[0031] The plasticizer includes polyethylene glycol.

[0032] The application also provides a preparation method of the laser chip packaging material, including the following steps:

[0033] S10, mixing the powder, sintering modifier, sintering aid, binder, deionized water, dispersant, plasticizer and defoaming agent according to the proportion, ball milling and dispersing to prepare slurry;

[0034] S20, performing flow casting on the slurry prepared in the step S10, drying the flow casted blank to form flow casted blank;

[0035] S30, performing warm isostatic pressing on the flow casted blank prepared in the step S20 under the condition of temperature 50-60℃ and pressure 110-130MPa, pre-cutting to form blank;

[0036] S40, performing heat treatment on the blank prepared in the step S30 under the condition of 500-700℃ to form green body;

[0037] S50, sintering the green body prepared in the step S40 under the condition of 1700-1750℃ in vacuum for 24-32h, annealing in air under the condition of 1300-1500℃ for 16-22h to prepare transparent YAG fluorescent complex phase crystal.

[0038] The application further provides application of the laser chip packaging material in the illumination field.

[0039] In the technical scheme, the powder, sintering modifier, sintering aid, binder, deionized water, dispersant, plasticizer and defoaming agent are mixed to form slurry, and the transparent YAG fluorescent complex phase crystal is prepared through sintering treatment, wherein the YAG fluorescent complex phase crystal comprises components with fluorescent effect.

[0040] When the laser chip is packaged, the transparent YAG fluorescent complex phase crystal is covered on the laser chip. During operation, the laser chip emits blue parallel light beams with wavelength of 450-460nm, the blue parallel light beams contact the transparent YAG fluorescent complex phase crystal, the components with fluorescent effect in the YAG fluorescent complex phase crystal absorb part of the blue light and emit yellow light, the yellow light and the blue light are complementary to form white light. After the alumina hollow spheres are sintered at high temperature, the alumina hollow spheres form a special structure and have good scattering characteristics for light. The alumina hollow spheres form scattering centers, so that the light is uniformly distributed in multiple directions, the components with fluorescent effect can be fully contacted with the blue light, and the light can be emitted at a larger angle. The alumina hollow spheres cooperate with the components with fluorescent effect to adjust the color and emission angle of the light, effectively improve the light emission efficiency, and the laser chip can work under high power, and can be well applied in the field of high pole illumination. BRIEF DESCRIPTION OF DRAWINGS

[0041] In order to more clearly illustrate the technical solutions in the embodiments of the present application or the prior art, the following will briefly introduce the drawings needed to be used in the embodiments or prior art description. Obviously, the drawings in the following description only represent some of the embodiments of the present application, and for those skilled in the art, other drawings can be obtained from the structures shown in these drawings without any creative effort.

[0042] Figure 1 The structure schematic diagram of YAG fluorescent complex crystal provided for performance test examples of the present application is covered on a laser chip.

[0043] Explanation of reference signs:

[0044] 1, substrate; 11, circuit structure; 2, laser chip; 3, YAG fluorescent complex crystal.

[0045] The implementation, functional features and advantages of the present application will be further described with reference to the embodiments and the accompanying drawings. DETAILED DESCRIPTION

[0046] The technical solutions in the embodiments of the present application will be described clearly and completely below with reference to the drawings in the embodiments of the present application. Obviously, the described embodiments only represent some of the embodiments of the present application, rather than all the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without any creative effort fall within the scope of protection of the present application.

[0047] It should be noted that if the embodiments of the present application involve directional indications (such as up, down, left, right, front, back, etc.), the directional indications are only used to explain the relative position relationship, movement condition, etc. between components in a certain posture (as shown in the drawings), and if the certain posture changes, the directional indications also change accordingly.

[0048] In addition, if the embodiments of the present application involve descriptions of "first", "second", etc., the descriptions of "first", "second", etc. are only for description purposes, and cannot be understood as indicating or implying the relative importance of the indicated technical features or implicitly indicating the number of the indicated technical features. Therefore, the features limited by "first", "second" can explicitly or implicitly include at least one of the features. In addition, the meaning of "and / or" appearing throughout the text includes three parallel solutions. Taking "A and / or B" as an example, it includes A solution, or B solution, or A and B solutions. In addition, the technical solutions of each embodiment can be combined with each other, but it must be based on the fact that a person skilled in the art can realize it. When the combination of technical solutions contradicts each other or cannot be realized, it should be considered that the combination of technical solutions does not exist, and is not within the scope of protection claimed by the present application.

[0049] Laser illumination can meet the high-power lighting demand, however, the parallel light beam emitted by the light emitting element (i.e. laser chip) limits its application in the field of high-pole lighting and the like. In view of this, the present application provides a laser chip packaging material, a preparation method and application thereof, aiming at solving the problem that the parallel light beam emitted by the light emitting element limits the application of laser illumination in the field of high-pole lighting and the like.

[0050] The laser chip packaging material provided by the present application comprises the following raw materials by weight: 40-60 parts of powder, 0.2-0.3 parts of sintering modifier, 7-8 parts of sintering aid, 15-25 parts of binder, 20-30 parts of deionized water, 1-2 parts of dispersant, 0.6-1.2 parts of plasticizer, and 0.2-0.6 parts of defoaming agent; wherein the powder comprises alumina hollow spheres, Al2O3, Y2O3, CeO2, ZnO and ZrO2, and the weight ratio of the alumina hollow spheres, Al2O3, Y2O3, CeO2, ZnO and ZrO2 is (58-82):(10-12):(5-8):(0.05-0.15):(0.04-0.07):(0.20-0.30).

[0051] In the technical solution of the present application, the powder, sintering modifier, sintering aid, binder, deionized water, dispersant, plasticizer and defoaming agent are mixed to form slurry, and the transparent YAG fluorescent complex crystal is prepared by sintering treatment. The YAG fluorescent complex crystal has components with fluorescent effect.

[0052] When the laser chip is packaged, the transparent YAG fluorescent complex crystal is covered on the laser chip. During operation, the laser chip emits a blue parallel light beam with a wavelength of 450-460 nm, the blue parallel light beam contacts the transparent YAG fluorescent complex crystal, the components with fluorescent effect in the YAG fluorescent complex crystal absorb part of the blue light and emit yellow light, the yellow light and the blue light are complementary to form white light. After the alumina hollow spheres are sintered at high temperature, they form a special structure with good light scattering properties. The alumina hollow spheres form scattering centers, so that the light is uniformly distributed in multiple directions, which not only enables the components with fluorescent effect to fully contact the blue light, but also enables the light to be emitted at a larger angle. The alumina hollow spheres cooperate with the components with fluorescent effect to adjust the color and emission angle of the light, effectively improve the light efficiency, and the laser chip can work under high power conditions and can be well applied in the field of high-pole lighting and the like.

[0053] It should be noted that the purity of Al2O3 (i.e. alumina), Y2O3 (i.e. yttrium oxide), CeO2 (i.e. cerium oxide), ZnO (i.e. zinc oxide) and ZrO2 (i.e. zirconium dioxide) is 99.9-99.99%, and the particle size is 0.1-2 μm.

[0054] Further, the laser chip packaging material comprises the following raw materials by weight: 50-60 parts of powder, 0.2-0.25 parts of sintering modifier, 7-7.5 parts of sintering aid, 15-20 parts of binder, 20-25 parts of deionized water, 1-1.5 parts of dispersant, 0.6-1 part of plasticizer, and 0.2-0.4 part of defoaming agent.

[0055] In the technical solution of the present application, by further adjusting the amount of raw materials of the laser chip packaging material, the light emission efficiency of the corresponding light source can be improved.

[0056] Further, the amount of the alumina hollow sphere accounts for 78-82% of the weight of the powder.

[0057] In the technical solution of the present application, by optimizing the amount of the alumina hollow sphere in the powder, the alumina hollow sphere can be better matched with the components having fluorescent effect, which can better adjust the color and emission angle of light, thereby effectively improving the light emission efficiency.

[0058] Further, the amount of the alumina hollow sphere accounts for 80.1% of the weight of the powder.

[0059] Further, the particle size of the alumina hollow sphere is 0.2-5 mm, and the bulk density is 0.5-1 g / cm 3 .

[0060] In the technical solution of the present application, the chemical composition of the alumina hollow sphere is mainly Al2O3, and the mass percentage of Al2O3 is ≥99%. The particle size of the alumina hollow sphere is 0.2-5 mm, and the bulk density is 0.5-1 g / cm 3 . The alumina hollow sphere with the above characteristics can be better matched with the components having fluorescent effect, thereby improving the light emission efficiency.

[0061] Further, the sintering modifier comprises CaO; and / or,

[0062] The sintering aid comprises tetraethyl orthosilicate and MgO.

[0063] In the technical solution of the present application, by adding the sintering modifier CaO (calcium oxide), and the sintering aid tetraethyl orthosilicate (TEOS) and MgO (magnesium oxide), the interface compatibility between materials can be improved, and the quality of the prepared YAG fluorescent complex crystal can be improved.

[0064] Further, the binder comprises PVA aqueous solution; and / or,

[0065] The dispersant comprises polyacrylamide; and / or,

[0066] The plasticizer comprises polyethylene glycol; and / or,

[0067] The defoaming agent comprises polypropylene glycol.

[0068] In the technical solution of the present application, the PVA aqueous solution, the dispersant and the polyethylene glycol can make the powder form a relatively uniform system.

[0069] The present application also provides a preparation method of the laser chip packaging material, comprising the following steps:

[0070] S10, mixing the powder, the sintering modifier, the sintering aid, the binder, the deionized water, the dispersant, the plasticizer and the defoaming agent according to the proportion, ball-milling and dispersing to prepare a slurry;

[0071] S20, performing flow casting on the slurry prepared in the step S10, drying the flow-cast blank to form a flow-cast blank;

[0072] S30, performing warm isostatic pressing on the flow-cast blank prepared in the step S20 under the condition that the temperature is 50-60℃ and the pressure is 110-130MPa, pre-cutting to form a blank;

[0073] S40, performing heat treatment on the blank prepared in the step S30 under the condition that the temperature is 500-700℃ to form a green blank;

[0074] S50, sintering the green blank prepared in the step S40 under the vacuum condition that the temperature is 1700-1750℃ for 24-32h, annealing in the air under the condition that the temperature is 1300-1500℃ for 16-22h to prepare a transparent YAG fluorescent complex phase crystal.

[0075] In the technical solution of the present application, the powder, the sintering modifier, the sintering aid, the binder, the deionized water, the dispersant, the plasticizer and the defoaming agent are mixed to form a slurry, and the slurry is subjected to flow casting, heating and sintering treatment to prepare a transparent YAG fluorescent complex phase crystal, wherein the YAG fluorescent complex phase crystal has a component with a fluorescent effect. The YAG fluorescent complex phase crystal is covered on the laser chip, the laser chip emits a blue parallel light beam, the alumina hollow sphere cooperates with the component with the fluorescent effect, which can adjust the color and the emission angle of the light, effectively improves the light emission efficiency, and the laser chip can work under high power, which can be well applied in the field of high-pole lighting.

[0076] The present application also provides the application of the above laser chip packaging material in the field of lighting.

[0077] The technical solution of the present application will be further described in detail in combination with specific embodiments and the accompanying drawings. It should be understood that the following embodiments are only used to explain the present application, and are not used to limit the present application. Embodiment 1

[0078] A preparation method of a laser chip packaging material, comprising the following steps:

[0079] S1, preparing a powder

[0080] 66 g of alumina hollow spheres, 11 g of Al2O3, 7 g of Y2O3, 0.1 g of CeO2, 0.05 g of ZnO and 0.25 g of ZrO2 are mixed, stirred and fully mixed to obtain a powder. The chemical composition of the alumina hollow spheres includes Al2O3, and the mass percentage of Al2O3 is ≥ 99 wt%. The particle size of the alumina hollow spheres is 0.2-0.5 mm, and the bulk density is 0.95 g / cm 3 ; the purity of Al2O3, Y2O3, CeO2, ZnO and ZrO2 is 99.99%, the average particle size of Al2O3 is 0.8 μm, the average particle size of Y2O3 and CeO2 is 2 μm, and the average particle size of ZnO and ZrO2 is 0.5 μm.

[0081] S2, preparing a binder

[0082] PVA is dissolved in deionized water, stirred and fully mixed to form a 15.0 wt% PVA aqueous solution; wherein wt% refers to mass percentage; the degree of polymerization of PVA is 1750±50.

[0083] S3, 45 g of the powder prepared in step S1, 25 g of deionized water, 0.25 g of sintering modifier CaO, 7.5 g of sintering aid, and 1.5 g of polyacrylamide dispersant are added to a ball mill tank, and ball milling and dispersion are carried out at a speed of 150 rpm for 20 h. 20 g of the PVA aqueous solution prepared in step S2, 1 g of polyethylene glycol (PEG-400) plasticizer, and 0.4 g of polypropylene glycol (molecular weight of 1200) defoaming agent are added to the ball mill tank, and ball milling is continued at a speed of 150 rpm for 22 h to form a slurry. The polyacrylamide is a cationic polyacrylamide with a molecular weight of 12 million; the sintering aid includes tetraethyl orthosilicate and MgO, and the mass ratio of tetraethyl orthosilicate to MgO is 10:1.

[0084] S4, the slurry prepared in step S3 is defoamed for 5 min under a vacuum degree of 0.08 MPa, and the defoamed slurry is placed on a casting machine for casting at a casting speed of 10 mm / min. The green sheet is dried in a drying chamber, and the drying temperature is divided into three stages: the first stage temperature is 50°C, the second stage temperature is 90°C, and the third stage temperature is 70°C. A casting green sheet with a thickness of 0.4 mm is prepared.

[0085] S5, the cast blank prepared in step S4 is vacuum-plasticized and then put into a warm isostatic pressing machine for pressing to improve the density. During the warm isostatic pressing, the temperature is 60°C, the pressure is 120 MPa, and the time is 5 min. The blank is pre-cut on a pre-cutting machine to prepare a blank.

[0086] S6, the blank prepared in step S5 is put into a muffle furnace for heating treatment to perform glue removal and form a green body. During the heating treatment, the temperature is raised to 600°C at a rate of 0.5°C / min, and the temperature is kept at 600°C for 8 h.

[0087] S7, the green body prepared in step S6 is vacuum-sintered at 1730°C for 30 h, and then annealed in air at 1400°C for 20 h. The transparent YAG fluorescent multiphase crystal is obtained. Example 2

[0088] This example is based on Example 1, except that in step S3, the amount of the powder is 40 g, and the other conditions are the same as in Example 1. Example 3

[0089] This example is based on Example 1, except that in step S3, the amount of the powder is 50 g, and the other conditions are the same as in Example 1. Example 4

[0090] This example is based on Example 1, except that in step S3, the amount of the powder is 60 g, and the other conditions are the same as in Example 1. Example 5

[0091] This example is based on Example 3, except that in step S3, the amount of the powder remains unchanged, and the amounts of the other ingredients are adjusted. The amount of deionized water is 20 g, the amount of sintering modifier is 0.2 g, the amount of sintering aid is 7 g, the amount of dispersant is 1 g, the amount of PVA aqueous solution is 15 g, the amount of plasticizer is 0.6 g, and the amount of defoaming agent is 0.2 g. The other conditions are the same as in Example 3. Example 6

[0092] This example is based on Example 3, except that in step S3, the amount of the powder remains unchanged, and the amounts of the other ingredients are adjusted. The amount of deionized water is 30 g, the amount of sintering modifier is 0.3 g, the amount of sintering aid is 8 g, the amount of dispersant is 2 g, the amount of PVA aqueous solution is 25 g, the amount of plasticizer is 1.2 g, and the amount of defoaming agent is 0.6 g. The other conditions are the same as in Example 3. Comparative Example 1

[0093] The comparative example is based on example 3, the difference is that in step S1, equal mass of Al2O3 is used to replace the alumina hollow sphere, and the rest is the same as example 3.

[0094] Examples 7-9

[0095] Examples 7-9 are based on example 5, the difference is that in step S1, the amount of alumina hollow sphere is changed, that is, the percentage Q of the amount of alumina hollow sphere in the weight of the powder is changed, Q = (mass of alumina hollow sphere / mass of powder) x 100%, as shown in the following table 1.

[0096] Table 1: Amount of powder and Q value

[0097] Alumina hollow spheres (g) Al203(g) [Y2O3(g)] CeO2(g) ZnO (g) [ZrO2(g)] Q（%） Example 5 66 11 7 0.1 0.05 0.25 78.2% Example 7 58 11 7 0.1 0.05 0.25 75.9% Example 8 74 11 7 0.1 0.05 0.25 80.1% Example 9 82 11 7 0.1 0.05 0.25 81.7%

[0098] Performance test

[0099] Reference Figure 1 , provide 10 pieces of aluminum nitride substrate 1 and 10 VCSEL blue laser chips 2, the aluminum nitride substrate 1 is provided with a circuit structure 11, 10 laser chips 2 are fixed on the corresponding aluminum nitride substrate, and each laser chip is electrically connected with the circuit structure on the corresponding aluminum nitride substrate, forming 10 light emitting devices, 10 light emitting devices correspond to examples 1-9 and comparative example 1. The YAG fluorescent complex crystal 3 prepared in examples 1-9 and comparative example 1 is covered on the corresponding laser chip by means of glue bonding, and a laser chip packaging finished product is prepared.

[0100] The luminous flux of the laser chip packaging finished product corresponding to examples 1-9 and comparative example 1 is measured by a remote integrating sphere under the condition of a voltage of 2.4V and a current of 1A, and the light efficiency is obtained by the luminous flux and the power, the light efficiency = (luminous flux / power) x 100%, wherein the power = voltage x current, and the test results are shown in the following table 2.

[0101] Table 2: Luminous flux and light efficiency

[0102] Luminous flux (lm) Efficiency of light emission (lm / w) Example 1 679.68 283.2 Example 2 699.60 291.5 Example 3 668.40 278.5 Example 4 692.88 288.7 Example 5 706.08 294.2 Example 6 683.52 284.8 Example 7 690.24 287.6 Example 8 705.84 294.1 Example 9 691.68 288.2 Comparative Example 1 300.48 125.2

[0103] From table 2, it can be seen that the light efficiency of the light source corresponding to examples 1-9 of the present application exceeds 270 lm / w, which indicates that the laser chip packaging material prepared in the examples of the present application can better adjust the light emitting direction of light, so that the parallel light beams emitted by the laser chip are distributed more uniformly in multiple directions.

[0104] Examples 1~4 investigated the influence of the amount of powder on the light extraction efficiency. Comparative Example 1 was based on Example 3, but did not contain the alumina hollow spheres, resulting in a significant decrease in light extraction efficiency. Examples 5~6 were based on Example 3, and investigated the influence of components other than the powder on the light extraction efficiency. Example 5 was a preferred embodiment. Examples 7~9 were based on Example 5, and investigated the influence of the amount of alumina hollow spheres in the powder on the light extraction efficiency.

[0105] The above merely provides preferred embodiments of the present application, and is not intended to limit the patent scope of the present application. Various modifications and changes can be made to the present application by those skilled in the art. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included in the patent protection scope of the present application.

Claims

1. A laser chip encapsulation material, characterized by, The raw materials include the following weight parts: Powder 40~60 parts; Sintering modifier 0.2~0.3 parts; Sintering aid 7~8 parts; Binder 15~25 parts; Deionized water 20~30 parts; Dispersant 1~2 parts; Plasticizer 0.6~1.2 parts; Defoaming agent 0.2~0.6 parts; The powder includes alumina hollow spheres, Al2O3, Y2O3, CeO2, ZnO and ZrO2, and the weight ratio of the alumina hollow spheres, Al2O3, Y2O3, CeO2, ZnO and ZrO2 is (58~82):(10~12):(5~8):(0.05~0.15):(0.04~0.07):(0.20~0.30). The particle size of the alumina hollow sphere is 0.2-5mm, and the bulk density is 0.5-1g / cm 3 ; The particle size of Al2O3, Y2O3, CeO2, ZnO and ZrO2 is 0.1~2μm.

2. The laser chip package material of claim 1, wherein, The raw materials include the following weight parts: Powder 50~60 parts; Sintering modifier 0.2~0.25 parts; Sintering aid 7~7.5 parts; Binder 15~20 parts; Deionized water 20~25 parts; Dispersant 1~1.5 parts; Plasticizer 0.6~1 parts; Defoaming agent 0.2~0.4 parts.

3. The laser chip package material of claim 1, wherein, The amount of the alumina hollow spheres accounts for 78~82% of the weight of the powder.

4. The laser chip package material of claim 3, wherein, The amount of the alumina hollow spheres accounts for 80.1% of the weight of the powder.

5. The laser chip package material of claim 1, wherein, The sintering modifier includes CaO; and / or, The sintering aid includes tetraethyl orthosilicate and MgO.

6. The laser chip package material of claim 1, wherein, The binder includes PVA aqueous solution; and / or, The dispersant includes polyacrylamide; and / or, The plasticizer includes polyethylene glycol.

7. A method of preparing a laser chip encapsulating material as claimed in any one of claims 1-6, characterized in that The method includes the following steps: S10, mixing the powder, sintering modifier, sintering aid, binder, deionized water, dispersant, plasticizer and defoaming agent according to the proportion, ball milling and dispersing to prepare slurry; S20, performing flow casting on the slurry prepared in the step S10, drying the cast blank to form a flow cast blank; S30, performing warm isostatic pressing on the flow cast blank prepared in the step S20 under the condition of temperature 50~60℃ and pressure 110~130MPa, pre-cutting to form a blank; S40, performing heat treatment on the blank prepared in the step S30 under the condition of 500~700℃ to form a green body; S50, sintering the green body prepared in the step S40 under the condition of vacuum at 1700~1750℃ for 24~32h, annealing in air at 1300~1500℃ for 16~22h to prepare transparent YAG fluorescent complex crystal.

8. The use of the laser chip packaging material according to any one of claims 1~6 in the field of illumination.

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