A device self-heating calculation, circuit simulation method and computer program product

Abstract

A device self-heating calculation, circuit simulation method and computer program product are applied to the technical field of circuit simulation, wherein a device self-heating calculation method comprises: obtaining a thermal model and thermal model parameters of an electronic device to be simulated; obtaining a current temperature and a current device simulation power, and obtaining a self-heating analytical model of the electronic device to be simulated based on the current temperature, the current device simulation power, the thermal model and the thermal model parameters; determining a current self-heating initial temperature of the electronic device to be simulated and a current simulation duration, and obtaining a current self-heating simulation temperature reached by the current temperature after the current simulation duration of the electronic device to be simulated under the condition of the thermal model parameters, the current device simulation power and the current self-heating initial temperature according to the self-heating analytical model. Since the self-heating of the electronic device to be simulated is calculated according to the self-heating analytical model, which is equivalent to time-based evolution calculation of self-heating simulation, the simulation calculation amount is reduced.

Description

TECHNICAL FIELD

[0001] The present application relates to the technical field of circuit simulation, in particular to a device self-heating calculation method, a circuit simulation method and a computer program product. BACKGROUND

[0002] The phenomenon that the local temperature of a semiconductor device rises due to the Joule heat generated by the semiconductor device in the working process is called self-heating effect. For example, in a field effect transistor, due to the externally applied source-drain voltage, a strong electric field is generated in the channel and drain regions of the device. Under the influence of this electric field, the carriers accelerate and drift to the drain to form a device current. However, the carriers inevitably collide with phonons generated by lattice vibration during the drift process, resulting in an increase in the lattice temperature. Since the carrier transport process is naturally accompanied by self-heating effect, the self-heating effect of the device cannot be completely eliminated and can only be suppressed by improving the structure or process.

[0003] In this regard, with the rapid increase in the integration density of semiconductor devices, it is a key problem in circuit thermal management to quickly and accurately evaluate the influence of the self-heating effect of the device on the performance of the device and even the circuit level. The self-heating simulation at the circuit level includes analysis of the steady-state self-heating temperature and transient self-heating temperature rise or drop of the device under working conditions.

[0004] In the current technical solution, the self-heating calculation of the device is usually based on the sub-circuit of the device, that is, after the thermal resistance and thermal capacity and other thermal parameters of the device are extracted, a new sub-circuit is created for each device of the circuit for simulation, and then the self-heating of each device is calculated in real time according to the temperature formula based on the current multiple electrical parameters of the device. Real-time self-heating calculation based on sub-circuits not only has a large amount of calculation and low efficiency, but also introduces thermal nodes in the circuit through these newly introduced sub-circuits, which often leads to a significant reduction in the speed of circuit simulation. Therefore, new technical solutions need to be proposed. SUMMARY

[0005] The technical problem solved by the present application is the low efficiency of self-heating simulation of a device.

[0006] According to a first aspect, in an embodiment, a device self-heating calculation method is provided, comprising:

[0007] obtaining a thermal model of a to-be-simulated electronic device and a thermal model parameter of the to-be-simulated electronic device under the thermal model;

[0008] obtaining a current temperature and a current device simulation power of the electronic device to be simulated, and obtaining a self-heating analytical model of the electronic device to be simulated based on the current temperature, the current device simulation power, a thermal model and a thermal model parameter, the self-heating analytical model being used to represent a functional relationship between the thermal model parameter, the device simulation power, a simulation time length and a self-heating initial temperature and a self-heating simulation temperature reached by the electronic device to be simulated under the thermal model;

[0009] determining a current self-heating initial temperature and a current simulation time length of the electronic device to be simulated, and obtaining a current self-heating simulation temperature reached by the electronic device to be simulated from the current temperature after the current simulation time length under the thermal model parameter, the current device simulation power and the current self-heating initial temperature according to the self-heating analytical model.

[0010] In some embodiments, the obtaining the self-heating analytical model of the electronic device to be simulated based on the current temperature, the current device simulation power, the thermal model and the thermal model parameter comprises:

[0011] obtaining a steady-state temperature of the electronic device to be simulated under the current device simulation power based on the current device simulation power and the thermal model parameter, and determining a size relationship between the current temperature and the steady-state temperature;

[0012] if the current temperature is less than the steady-state temperature, obtaining a self-heating analytical model of the electronic device to be simulated for temperature rise based on the thermal model;

[0013] and / or,

[0014] if the current temperature is greater than the steady-state temperature, obtaining a self-heating analytical model of the electronic device to be simulated for temperature drop based on the thermal model.

[0015] In some embodiments, when the self-heating analytical model of the electronic device to be simulated for temperature rise is obtained based on the thermal model, the current self-heating initial temperature of the electronic device to be simulated is a preset constant value; and the current temperature is greater than or equal to the current self-heating initial temperature.

[0016] In some embodiments, the obtaining the current self-heating simulation temperature according to the self-heating analytical model for temperature rise comprises:

[0017] obtaining an equivalent simulation time length required for the electronic device to be simulated to rise from the current self-heating initial temperature to the current temperature under the thermal model parameter, the current device simulation power, the current self-heating initial temperature and the current temperature based on the self-heating analytical model for temperature rise, and obtaining a target simulation time length by adding the current simulation time length to the equivalent simulation time length.

[0018] According to the self-heating analytical model of the temperature rise, the current self-heating simulation temperature reached by the current temperature rise of the to-be-simulated electronic device after the target simulation duration is obtained under the thermal model parameters, the current device simulation power and the current self-heating initial temperature.

[0019] In some embodiments, when the self-heating analytical model of the temperature drop of the to-be-simulated electronic device is obtained based on the thermal model, the current self-heating initial temperature of the to-be-simulated electronic device is the current temperature.

[0020] In some embodiments, the current self-heating simulation temperature is obtained according to the self-heating analytical model of the temperature drop, including:

[0021] According to the self-heating analytical model of the temperature drop, the current self-heating simulation temperature reached by the current temperature drop of the to-be-simulated electronic device after the current simulation duration is obtained under the thermal model parameters, the current device simulation power and the current temperature.

[0022] In some embodiments, the to-be-simulated electronic device includes a semiconductor device; wherein the semiconductor device includes a fin field effect transistor and / or a ring gate field effect transistor.

[0023] In some embodiments, the thermal model includes a single-order RC thermal network and / or a multi-order RC thermal network; wherein the thermal model parameters of the thermal model include an equivalent thermal capacitance value and an equivalent thermal resistance value of the to-be-simulated electronic device.

[0024] According to a second aspect, an embodiment of a circuit simulation method is provided, including:

[0025] Obtaining a to-be-simulated circuit, the to-be-simulated circuit including at least one to-be-simulated electronic device;

[0026] Under a current simulation duration, respectively obtaining self-heating simulation temperatures of the at least one to-be-simulated electronic device reached in a transient simulation of a previous simulation duration of the current simulation duration; wherein the self-heating simulation temperature of the to-be-simulated electronic device reached in the previous simulation duration is calculated based on the device self-heating calculation method as described in the first aspect;

[0027] Based on each self-heating simulation temperature, the temperature of the corresponding to-be-simulated electronic device in the to-be-simulated circuit is updated respectively, and a transient simulation without self-heating effect is performed based on the updated to-be-simulated circuit to obtain a simulation result under the current simulation duration.

[0028] According to a third aspect, a computer program product is provided in an embodiment, comprising computer programs and / or instructions, which, when executed by a processor, implement the method according to the first aspect or the second aspect.

[0029] According to the device self-heating calculation method, the circuit simulation method and the computer program product of the above embodiments, the self-heating analytical model of the electronic device to be simulated is obtained based on the current temperature and the current device simulation power of the electronic device to be simulated, and the thermal model and the thermal model parameters, and the self-heating analytical model is used to represent the functional relationship between the thermal model parameters, the device simulation power, the simulation time and the self-heating initial temperature of the electronic device to be simulated and the self-heating simulation temperature reached by the electronic device to be simulated. When the self-heating of the electronic device to be simulated needs to be calculated, the current self-heating initial temperature and the current simulation time are determined, and the current self-heating simulation temperature reached by the electronic device to be simulated from the current temperature after the current simulation time under the condition of the thermal model parameters, the current device simulation power and the current self-heating initial temperature is obtained according to the self-heating analytical model. Since the thermal model parameters, the device simulation power, the simulation time and the self-heating initial temperature of the electronic device to be simulated are known, the self-heating of the electronic device to be simulated is calculated according to the self-heating analytical model, which is equivalent to calculating the time evolution of the current simulation time, and the electronic device to be simulated reaches the current self-heating simulation temperature from the current temperature. Since the self-heating of the electronic device to be simulated is calculated based on the time evolution, only the current power of the electronic device to be simulated needs to be obtained, and other electrical parameters related to the self-heating do not need to be obtained, so that the simulation calculation amount of the self-heating calculation is greatly reduced, and the time evolution based calculation can also make the discrete simulation in time based on the current simulation time, and directly obtain the final result of the current simulation time, without the need to calculate the intermediate process of the self-heating, and without the need to additionally establish the sub-circuit of the electronic device to be simulated, so as to further reduce the simulation calculation amount, thereby improving the efficiency of the self-heating simulation and reducing the time consumption of the self-heating calculation. BRIEF DESCRIPTION OF DRAWINGS

[0030] Figure 1 A flowchart of a device self-heating calculation method according to an embodiment;

[0031] Figure 2 A flowchart of a circuit simulation method according to an embodiment;

[0032] Figure 3 A schematic diagram of a thermal model according to an embodiment;

[0033] Figure 4 A schematic diagram of the calculation of a self-heating analytical model of temperature rise according to an embodiment;

[0034] Figure 5 A schematic diagram of the calculation of a self-heating analytical model of temperature rise according to another embodiment;

[0035] Figure 6 A calculation schematic diagram of a self-heating analytical model of temperature reduction for an embodiment;

[0036] Figure 7 A simulation result schematic diagram for an embodiment. DETAILED DESCRIPTION

[0037] The application will be further described in details by specific embodiments in conjunction with the accompanying drawings. In different embodiments, similar elements are denoted by similar reference signs. In the following embodiments, many details are described in order to make the application better understood. However, those skilled in the art can easily recognize that some features can be omitted in different cases, or can be replaced by other elements, materials or methods. In some cases, some operations related to the application are not shown or described in the specification in order to avoid the core part of the application being overwhelmed by too much description, and it is not necessary to describe these related operations in detail for those skilled in the art according to the description in the specification and general technical knowledge in the art.

[0038] In addition, the features, operations or characteristics described in the specification can be combined in any appropriate manner to form various embodiments. At the same time, the steps or actions in the method description can also be sequentially adjusted or adjusted in a manner that is obvious to those skilled in the art. Therefore, the order in the specification and the drawings is only for the purpose of clearly describing a certain embodiment, and does not mean that it is the necessary order, unless otherwise stated that a certain order must be followed.

[0039] The serial numbers of components in this paper, such as "first", "second", etc., are only used to distinguish the described objects, and have no order or technical meaning. Unless otherwise specified, "connection" and "coupling" in this application include direct and indirect connection (coupling).

[0040] In some embodiments of the application, a self-heating analytical model of an electronic device to be simulated is obtained based on a thermal model of the electronic device to be simulated, and a self-heating simulation temperature after a current simulation time is obtained based on the self-heating analytical model in a time evolution manner under a current temperature and a current device simulation power. Since the self-heating simulation temperature of the electronic device to be simulated is calculated based on the time evolution manner, firstly, only the current power of the electronic device to be simulated needs to be obtained, and other electrical parameters related to self-heating do not need to be obtained, secondly, discrete self-heating simulation can be performed based on the current simulation time, and the final result of the current simulation time can be directly obtained, without the need to calculate the intermediate process of self-heating, and without the need to additionally establish a sub-circuit of the electronic device to be simulated, thereby reducing the simulation calculation amount and improving the efficiency of self-heating simulation.

[0041] Some embodiments provide a device self-heating calculation method for calculating self-heating temperature of an electronic device to be simulated in a circuit simulation process, so as to accurately evaluate the performance of the electronic device to be simulated and the simulation circuit. Please refer to Figure 1 The device self-heating calculation method comprises the following steps:

[0042] Step 100: Obtain a thermal model and thermal model parameters of an electronic device to be simulated.

[0043] Electronic devices usually generate Joule heat during operation, which causes local temperature rise. Some performance of the electronic device is related to the temperature, so it is necessary to calculate the self-heating of the electronic device to accurately simulate the circuit. The thermal model is a model specially used for thermal behavior simulation in electronic circuits, which can be used to calculate the self-heating of the electronic device. Therefore, it is necessary to obtain the thermal model of the electronic device to be simulated and the thermal model parameters of the electronic device to be simulated under the thermal model. In some embodiments, different thermal models can be selected according to different electronic devices to be simulated, or the same thermal model can be selected, as long as it can be used to calculate the self-heating of the electronic device to be simulated.

[0044] In some embodiments, the thermal model can adopt a single-order RC thermal network or a multi-order RC thermal network, and the thermal model parameters of the thermal model include an equivalent heat capacity value and an equivalent heat resistance value of the electronic device to be simulated. The equivalent heat capacity value can usually represent the temperature rise or temperature drop speed of the electronic device to be simulated, and the equivalent heat resistance value can usually represent the temperature rise range or temperature drop range of the electronic device to be simulated. The single-order RC thermal network includes a parallel equivalent heat capacity value and an equivalent heat resistance value, and the multi-order RC thermal network includes a plurality of single-order RC thermal networks in series. Both of them can be used to reflect the temperature rise process and temperature drop process of the electronic device to be simulated during operation. For example, please refer to Figure 3 which represents a single-order RC thermal network corresponding to a field effect transistor, wherein g, s, and d are the gate, source, and drain of the field effect transistor, respectively, and T is the temperature.

[0045] In some embodiments, the electronic device to be simulated includes a semiconductor device, wherein the semiconductor device includes a fin field effect transistor (FinFET) and a gate-all-around field effect transistor (GAAFET). For example, in advanced process FinFET devices, different device crystal orientations result in different defect densities at the top of the gate and the gate sidewall, and the carrier energy distribution is also different, which increases the challenge for device reliability analysis and characterization. Similarly, the contact area of the channel of the FinFET device with the substrate is much smaller than that of the traditional planar tube process, making the heat dissipation path of the device more complex and further exacerbating the self-heating effect. Therefore, the thermal evaluation and thermal management scheme of the three-dimensional structure device under advanced process is particularly important.

[0046] Step 200: obtaining a self-heating analytical model of the electronic device to be simulated based on a current temperature of the electronic device to be simulated, a current device simulation power, a thermal model and thermal model parameters.

[0047] In some embodiments, a steady-state temperature of the electronic device to be simulated under the current device simulation power is obtained based on the current device simulation power and the thermal model parameters. Since the temperature of the electronic device to be simulated is mainly determined by the device simulation power of the electronic device to be simulated in the process of time evolution, the electronic device to be simulated will eventually reach a steady-state temperature under the device simulation power as time evolves, and the steady-state temperature is equal to the product of the device simulation power and the equivalent thermal resistance value, i.e., the steady-state temperature under the current device simulation power wherein is the current device simulation power, is the equivalent thermal resistance value of the thermal model.

[0048] Then, the current temperature of the electronic device to be simulated is obtained, and the size of the current temperature and the steady-state temperature is determined. If the current temperature is less than the steady-state temperature, it indicates that the electronic device to be simulated will be in a warming state and will be warmed from the current temperature to the steady-state temperature as time evolves under the current device simulation power. Conversely, if the current temperature is greater than the steady-state temperature, it indicates that the electronic device to be simulated will be in a cooling state and will be cooled from the current temperature to the steady-state temperature as time evolves under the current device simulation power.

[0049] In some embodiments, if the current temperature is less than the steady-state temperature, a self-heating analytical model of the electronic device to be simulated in the warming state is obtained based on the thermal model. In some embodiments, if the current temperature is greater than the steady-state temperature, a self-heating analytical model of the electronic device to be simulated in the cooling state is obtained based on the thermal model. Wherein, when the thermal model is determined, the self-heating analytical model thereof in the case of time evolution is in a known corresponding relationship with the thermal model.

[0050] In some embodiments, when the self-heating analytical model of the electronic device to be simulated in the warming state is obtained based on the thermal model, the self-heating initial temperature of the electronic device to be simulated is a preset constant value, which can be selected according to the device or simulation situation, and the current temperature is greater than or equal to the self-heating initial temperature.

[0051] In some embodiments, when the thermal model is a single-order RC thermal network, the specific self-heating analytical model of the electronic device to be simulated in the warming state is:

[0052] ;

[0053] ;

[0054] = * ;

[0055] wherein, represents a self-heating simulation temperature of a self-heating analytical model of the electronic device under simulation, represents a self-heating initial temperature of the electronic device under simulation, represents a simulation duration, is an equivalent heat capacity value of the thermal model, represents a current device simulation power; wherein, is a time constant corresponding to the self-heating initial temperature, which can be understood as the inverse function of the function.

[0056] As can be seen from the above, when the simulation duration is equal to 0, the self-heating simulation temperature is the self-heating initial temperature , with the increase of the simulation duration , the self-heating simulation temperature starts to gradually increase from the self-heating initial temperature , and gradually approaches the steady-state temperature.

[0057] In some embodiments, when the self-heating initial temperature of the electronic device under simulation is 0, the self-heating analytical model of the electronic device under simulation can be simplified as:

[0058] ;

[0059] In some embodiments, when the self-heating analytical model of the electronic device under simulation is obtained based on the thermal model, the current self-heating initial temperature of the electronic device under simulation is the current temperature, and in some embodiments, the current self-heating initial temperature of the electronic device under simulation can also be the maximum temperature that it can reach in the simulation process.

[0060] In some embodiments, when the thermal model is a single-order RC thermal network, the specific self-heating analytical model of the electronic device under simulation is:

[0061] ;

[0062] = * ;

[0063] wherein, represents a self-heating simulation temperature of a self-heating analytical model of the electronic device under simulation, represents a current temperature.

[0064] As can be seen from the above, when the simulation duration is equal to 0, the self-heating simulation temperature is the current temperature As the simulation time length increases, the self-heating simulation temperature gradually decreases from the current temperature and increasingly approaches the steady-state temperature.

[0065] In some embodiments, for a simulation electronic device, when different thermal models are selected, different self-heating analytical models can be obtained based on the thermal models, which can all be used to characterize the temperature change of the simulation electronic device over time under the condition that the device simulation power and the self-heating initial temperature are known.

[0066] Step 300: calculating the self-heating simulation temperature of the electronic device to be simulated based on the self-heating analytical model.

[0067] In some embodiments, when the self-heating simulation temperature of the electronic device to be simulated is calculated based on the self-heating analytical model of temperature rise, the equivalent simulation time length required for the electronic device to be simulated to rise from the self-heating initial temperature to the current temperature under the condition of the thermal model parameters, the current device simulation power, the current self-heating initial temperature and the current temperature is obtained based on the self-heating analytical model of temperature rise. In some embodiments, the inverse function of the simulation time length corresponding to the self-heating simulation temperature can be obtained based on the self-heating analytical model of temperature rise, so that the corresponding equivalent simulation time length can be calculated under the condition that the current temperature is known, that is:

[0068]

[0069] wherein represents the equivalent simulation time length, is the inverse function of .

[0070] In this embodiment, since the self-heating analytical model of temperature rise is based on the calculation process of time evolution, when the electronic device to be simulated is at the current temperature, the time length required for the electronic device to be simulated to rise from the self-heating initial temperature to the current temperature under the condition of the self-heating analytical model of temperature rise is obtained, that is, the equivalent simulation time length corresponding to the current temperature.

[0071] Then, the equivalent simulation time length is increased by the current simulation time length to obtain the target simulation time length, that is, the simulation of the current simulation time length is continued on the basis of the equivalent simulation time length, and the current self-heating simulation temperature reached by the electronic device to be simulated from the current temperature under the condition of the thermal model parameters, the current device simulation power and the current self-heating initial temperature after the target simulation time length is obtained according to the self-heating analytical model of temperature rise, so as to obtain the self-heating calculation result of the current simulation time length, that is:

[0072]

[0073] wherein,​​ is the current self-heating simulation temperature, is the current simulation time. For example, refer to Figure 4 , where the last simulation time is t1, the last simulation power is P1, the current simulation time is t2, and the current simulation power is P2, is the calculated equivalent simulation time, and since the current simulation power is less than the last simulation power, the equivalent simulation time is greater than the last simulation time. For example, refer to Figure 5 , where the last simulation time is t1, the simulation power is P1, the current simulation time is t2, and the current simulation power is P2, is the calculated equivalent simulation time, and since the current simulation power is greater than the last simulation power, the equivalent simulation time is less than the last simulation time.

[0074] In some embodiments, when the self-heating simulation temperature of the electronic device to be simulated is calculated based on the self-heating analytical model of temperature drop, and the current self-heating initial temperature of the electronic device to be simulated is the current temperature, then the current self-heating simulation temperature reached by the current temperature after the current simulation time based on the self-heating analytical model of temperature drop under the thermal model parameters, the current device simulation power, and the current temperature is directly obtained, that is,

[0075] ;

[0076] For example, refer to Figure 6 , where the last simulation time is t1, the simulation power is P1, the current simulation time is t2, and the current simulation power is P2, since the current simulation power is less than the current simulation time, and the current temperature is greater than the steady-state temperature under the current simulation power, the electronic device to be simulated starts to cool down.

[0077] In the above embodiments, the thermal model of the electronic device to be simulated is first obtained, and the corresponding self-heating analytical model is obtained based on the thermal model, and after the current self-heating initial temperature and the current simulation time are determined, the current self-heating simulation temperature reached by the current temperature after the current simulation time is calculated based on the time evolution from the self-heating analytical model, so that multiple electrical parameters of the simulated electronic device do not need to be obtained, and complex calculations based on multiple electrical parameters from the temperature formula are also not required, thereby reducing the simulation calculation amount of self-heating calculation, improving the efficiency of self-heating simulation, and reducing the time consumption of self-heating calculation. In addition, the analytical calculation process of the above self-heating analytical model does not require additional establishment of sub-circuits, thereby avoiding the introduction of thermal nodes, and the calculation based on the evolution of time can also enable discrete simulation in time based on the current simulation time, and directly obtain the final result of the current simulation time, without the need to calculate the intermediate process, further improving the efficiency of temperature calculation.

[0078] The above is a description of the self-heating calculation method for the to-be-simulated electronic device. The following describes the process of circuit simulation in detail.

[0079] In some embodiments, a circuit simulation method is provided, which can be used to simulate a to-be-simulated circuit to obtain a performance evaluation of the to-be-simulated circuit. Please refer to Figure 2 The circuit simulation method can include the following steps:

[0080] Step 110: Obtain a to-be-simulated circuit, which includes at least one to-be-simulated electronic device.

[0081] In some embodiments, the to-be-simulated circuit can be a single to-be-simulated electronic device, or a circuit composed of multiple to-be-simulated electronic devices.

[0082] Step 210: Obtain the self-heating simulation temperature of the to-be-simulated electronic device reached in the transient simulation of the last simulation duration.

[0083] Step 310: Update the temperature of the to-be-simulated electronic device based on the self-heating simulation temperature, and perform transient simulation without self-heating effect to obtain the simulation result under the current simulation duration.

[0084] In some embodiments, the to-be-simulated circuit can be simulated based on discrete time, for example, the last simulation duration and the current simulation duration are both a step simulation duration. When the last simulation duration is performed, transient simulation without self-heating effect can be performed, and the self-heating simulation temperature of each to-be-simulated electronic device reached in the last simulation duration can be calculated based on the above device self-heating calculation method, to update the temperature of the corresponding to-be-simulated electronic device based on the self-heating simulation temperature reached in the last simulation duration before the current simulation duration, and to perform transient simulation without self-heating effect based on the updated to-be-simulated circuit, to obtain the simulation result under the current simulation duration, so that the evaluation of the performance degradation of the circuit due to self-heating effect can be obtained. Wherein, the current simulation time performs transient simulation without self-heating effect, that is, simulation without considering self-heating effect, and the temperature of the device is updated based on the self-heating simulation temperature calculated in the current simulation time in the next simulation time, to achieve the simulation of self-heating effect.

[0085] In some embodiments, the self-heating simulation temperature of each to-be-simulated electronic device reached in the current simulation duration can also be calculated based on the above device self-heating calculation method, to update the temperature of each to-be-simulated electronic device before the simulation of the next simulation duration.

[0086] Please refer to Figure 7, which is a voltage simulation process of the electronic device to be simulated, wherein the black line with darker color is the simulation without self-heating effect, the gray line with lighter color is the simulation result of the sub-circuit in the prior art, and the dotted line is the simulation result based on time evolution in the present application. It can be seen that the simulation result of the present application is consistent with the simulation result of the prior art, and thus has good simulation effect.

[0087] In the above embodiment, since the temperature is updated based on the self-heating simulation temperature of the electronic device to be simulated in the last simulation time length before the simulation of the current simulation time length is performed, and then the transient simulation without self-heating effect is performed, the calculation of the temperature of each device in the circuit is accelerated, which provides a powerful solution for the self-heating effect simulation of large-scale circuits, and makes it possible to quickly evaluate the self-heating effect of large-scale integrated circuits. Moreover, the simulation is performed after the temperature of the electronic device to be simulated is updated, so that even if the transient simulation without self-heating effect is performed, the self-heating effect can also be realized based on the electronic device to be simulated after the temperature is updated to evaluate the aging of the circuit performance.

[0088] In some embodiments, the simulation can be based on some standard device database to obtain the related simulation parameters of each electronic device to be simulated, for example, the current, voltage, capacitance, charge, conductance and other parameters can be obtained based on the standard device model interface, and the thermal model parameters of the simulation electronic device can also be obtained. At the same time, when the temperature of the electronic device to be simulated changes, the parameters related to the temperature change can also be updated based on the device database, for example, the channel carrier mobility of the semiconductor device is updated, and the current of the device is updated, so as to realize the self-heating effect to evaluate the aging of the circuit performance.

[0089] Some embodiments provide a computer program product including computer programs and / or instructions, which are executed by a processor to realize the above-mentioned device self-heating calculation method or circuit simulation method. In some embodiments, the computer program product can be embedded in the model interface of the circuit simulator, so as to realize the device self-heating calculation method or circuit simulation method. In some embodiments, the operation of the computer program product can also be realized based on other ways.

[0090] Those skilled in the art can understand that all or part of the functions of various methods in the above embodiments can be realized by hardware or by a computer program. When all or part of the functions in the above embodiments are realized by a computer program, the program can be stored in a computer readable storage medium, which can include a read-only memory, a random access memory, a magnetic disk, an optical disk, a hard disk, and the like. The above functions are realized by executing the program by a computer. For example, the program is stored in a memory of a device, and when the program in the memory is executed by a processor, the above functions are realized. In addition, when all or part of the functions in the above embodiments are realized by a computer program, the program can also be stored in a storage medium such as a server, another computer, a disk, an optical disk, a flash disk, or a mobile hard disk, and is downloaded or copied into a memory of a local device or is updated in version to a system of the local device. When the program in the memory is executed by a processor, all or part of the functions in the above embodiments are realized.

[0091] The above application is described by using specific examples, which is only used to help understand the application and does not limit the application. According to the idea of the application, those skilled in the art can make several simple deductions, modifications, or substitutions.

Claims

1. A method of device self-heating calculation, the method comprising: The method comprises the following steps: obtaining a thermal model of an electronic device to be simulated and a thermal model parameter of the electronic device to be simulated under the thermal model; obtaining a current temperature and a current device simulation power of the electronic device to be simulated, and obtaining a self-heating analytical model of the electronic device to be simulated based on the current temperature, the current device simulation power, the thermal model and the thermal model parameter, the self-heating analytical model being used to represent a functional relationship between the thermal model parameter, the device simulation power, a simulation time length and a self-heating initial temperature of the electronic device to be simulated and a self-heating simulation temperature reached by the electronic device to be simulated under the thermal model; determining a current self-heating initial temperature and a current simulation time length of the electronic device to be simulated, and obtaining a current self-heating simulation temperature reached by the current temperature after the current simulation time length under the thermal model parameter, the current device simulation power and the current self-heating initial temperature of the electronic device to be simulated according to the self-heating analytical model; wherein the step of obtaining the self-heating analytical model of the electronic device to be simulated based on the current temperature, the current device simulation power, the thermal model and the thermal model parameter comprises the following steps: obtaining a steady-state temperature of the electronic device to be simulated under the current device simulation power based on the current device simulation power and the thermal model parameter, and determining the size of the current temperature and the steady-state temperature; if the current temperature is less than the steady-state temperature, obtaining a self-heating analytical model of the electronic device to be simulated for temperature rise based on the thermal model, when the thermal model is a single-order RC thermal network, the self-heating analytical model of the electronic device to be simulated for temperature rise is: ； ； = * ； wherein, a self-heating simulation temperature of a self-heating analysis model representing a temperature ramp-up, a self-heating initial temperature of the electronic device to be simulated, a simulation duration, an equivalent heat capacity value of the thermal model, a current device simulation power, an equivalent thermal resistance value of the thermal model; wherein, a time constant corresponding to the self-heating initial temperature, a function of an inverse function of the function. if the current temperature is greater than the steady-state temperature, obtaining a self-heating analytical model of the electronic device to be simulated for temperature drop based on the thermal model, when the thermal model is a single-order RC thermal network, the self-heating analytical model of the electronic device to be simulated for temperature drop is: ； = * ； wherein, the self-heating simulation temperature of the self-heating analytical model representing the temperature decrease, represents the current temperature.

2. The device self-heating calculation method of claim 1, wherein, when the self-heating analytical model of the electronic device to be simulated for temperature rise is obtained based on the thermal model, the current self-heating initial temperature of the electronic device to be simulated is a preset constant value; wherein the current temperature is greater than or equal to the current self-heating initial temperature.

3. The device self-heating calculation method according to claim 1 or 2, wherein the current self-heating simulation temperature is obtained according to the self-heating analytical model for temperature rise, comprising the following steps: obtaining an equivalent simulation time length required for the electronic device to be simulated to rise from the current self-heating initial temperature to the current temperature under the thermal model parameter, the current device simulation power, the current self-heating initial temperature and the current temperature based on the self-heating analytical model for temperature rise, and obtaining a target simulation time length by adding the equivalent simulation time length to the current simulation time length; obtaining the current self-heating simulation temperature reached by the current temperature after the target simulation time length under the thermal model parameter, the current device simulation power and the current self-heating initial temperature of the electronic device to be simulated according to the self-heating analytical model for temperature rise.

4. The device self-heating calculation method of claim 1, wherein, The current self-heating initial temperature of the to-be-simulated electronic device is the current temperature when the self-heating analytical model of the to-be-simulated electronic device is obtained based on the thermal model.

5. The device self-heating calculation method of claim 4, wherein, The current self-heating simulation temperature is obtained according to the self-heating analytical model of the cooling. The current self-heating simulation temperature reached by the to-be-simulated electronic device from the current temperature after the current simulation duration according to the self-heating analytical model of the cooling, the current device simulation power, and the current temperature of the thermal model parameters is obtained.

6. The device self-heating calculation method of claim 1, wherein, The to-be-simulated electronic device includes a semiconductor device; wherein the semiconductor device includes a fin field effect transistor and / or a ring gate field effect transistor.

7. The device self-heating calculation method of claim 1, wherein, The thermal model includes a single-order RC thermal network and / or a multi-order RC thermal network; wherein the thermal model parameters of the thermal model include an equivalent heat capacity value and an equivalent thermal resistance value of the to-be-simulated electronic device.

8. A circuit simulation method, characterized by, It includes: Obtaining a to-be-simulated circuit, the to-be-simulated circuit including at least one to-be-simulated electronic device; In the current simulation duration, the self-heating simulation temperature of the at least one to-be-simulated electronic device reached in the transient simulation of the last simulation duration of the current simulation duration is obtained respectively; wherein the self-heating simulation temperature of the to-be-simulated electronic device reached in the last simulation duration is calculated based on the device self-heating calculation method in any one of claims 1-7; Based on each self-heating simulation temperature, the temperature of the corresponding to-be-simulated electronic device in the to-be-simulated circuit is updated respectively, and a transient simulation without self-heating effect is performed based on the updated to-be-simulated circuit to obtain a simulation result in the current simulation duration.

9. A computer program product comprising computer programs and / or instructions, characterized in that, The computer program and / or instructions are executed by the processor to implement the method in any one of claims 1-8. The computer program and / or instructions are executed by the processor to implement the method in any one of claims 1-8.

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