Semiconductor processing device and control method thereof

Abstract

The invention provides a semiconductor processing device and a control method thereof, and relates to the technical field of semiconductors, the semiconductor processing device comprises a machine table, the machine table is provided with a process cavity used for plasma etching, the process cavity is communicated with a cache region and a material storage region, and a wafer passes through the cache region, the process cavity and the material storage region in sequence; the device further comprises a degassing module and a gas transmission module, and the degassing module is used for removing residual gas remaining on the surface of the wafer when the wafer is transferred from the processing cavity to the material storage area. And the gas transmission module is used for removing residual gas on the surface of the wafer and then transmitting protective gas to the surface of the wafer so as to protect the surface quality of the wafer. The degassing module is used for removing residual gas left on the surface of the wafer when the wafer is etched; after the residual gas is removed, protective gas is conveyed to the surface of the wafer, so that the wafer can be prevented from reacting with nitrogen, hydrogen, water and the like in the air to generate condensate, and the condition that the condensate corrodes the surface of the wafer to cause damage to the surface of the wafer is solved; the surface quality of the wafer is ensured, and the product yield of the wafer is improved.

Description

Technical Field

[0001] The present application relates to the field of semiconductor technology, and in particular to a semiconductor processing device and a control method thereof. Background Art

[0002] Plasma etching is a commonly used target material removal process in the semiconductor manufacturing field. It is the process of transferring the pattern exposed and developed on the photoresist to the target material, and finally forming the desired design pattern. Generally, an external electromagnetic field is used to excite a specific gas in the chamber to generate a plasma containing high-energy particles. The high-energy particles in the plasma can remove substances on the surface of the material by physical sputtering or chemical reaction to generate volatile products, completing plasma etching.

[0003] During plasma etching, the machine is used to transfer wafers. All wafers to be etched are first transferred from the storage area to the buffer area, then sequentially enter the process area for etching, and finally return to the storage area to be transferred to the subsequent process. The wafers returned to the storage area will have residual gas from the etching process, and the residual gas cannot evaporate in the relatively closed storage area. It will also react with nitrogen, hydrogen, water, etc. in the air in the closed space to produce condensation. In the subsequent process, the condensation may corrode the wafer surface and cause damage to the wafer surface, thereby affecting the product yield. Summary of the invention

[0004] The purpose of the embodiments of the present application is to provide a semiconductor processing device and a control method thereof, which can effectively remove residual gas remaining on the surface of the wafer after etching and improve product yield.

[0005] In one aspect of an embodiment of the present application, a semiconductor processing device is provided, including a machine platform, wherein the machine platform is provided with a process chamber for plasma etching, wherein the process chamber is respectively connected with a buffer area and a material storage area, and a wafer passes through the buffer area, the process chamber and the material storage area in sequence;

[0006] It also includes a degassing module and a gas delivery module. The degassing module is used to remove residual gas remaining on the surface of the wafer when the wafer is transferred from the process chamber to the storage area; the gas delivery module is used to remove the residual gas on the surface of the wafer and then deliver protective gas to the surface of the wafer to protect the surface quality of the wafer.

[0007] Optionally, the degassing module includes a first air pump and a first air pipe, and the first air pump draws air from the surface of the wafer through the first air pipe to remove residual gas remaining on the surface of the wafer.

[0008] Optionally, a robot arm is further included, wherein the robot arm is used to transport the wafer, and the degassing module is arranged on the robot arm.

[0009] Optionally, the gas delivery module includes a second gas pump and a second gas pipe, and the second gas pump delivers the protective gas to the wafer surface through the second gas pipe.

[0010] Optionally, the shielding gas comprises an inert gas.

[0011] Optionally, a controller is further included, and the controller is electrically connected to the degassing module, the gas delivery module and the manipulator respectively.

[0012] Another aspect of the embodiment of the present application provides a control method for a semiconductor processing device, which is used to control the above-mentioned semiconductor processing device, including: controlling a wafer to be transferred from a buffer area to a process chamber, so that the wafer is etched in the process chamber;

[0013] Controlling the wafer to be transferred from the process chamber to the storage area, and removing residual gas remaining on the surface of the wafer during the wafer transfer process;

[0014] After removing the residual gas on the surface of the wafer, a protective gas is delivered to the surface of the wafer until the wafer is transferred to the storage area.

[0015] Optionally, a robot is used to transfer the wafer.

[0016] Optionally, controlling the wafer to be transferred from the process chamber to the storage area and removing residual gas remaining on the surface of the wafer during the wafer transfer process includes:

[0017] The robot is controlled to grab the wafer in the process chamber and transfer it to the storage area, and a degassing module arranged on the robot is used to evacuate gas from the surface of the wafer to remove residual gas remaining on the surface of the wafer.

[0018] Optionally, after removing the residual gas on the surface of the wafer, supplying a protective gas to the surface of the wafer comprises:

[0019] The gas delivery module is controlled to deliver protective gas to the surface of the wafer to protect the surface of the wafer until the wafer is transferred to the storage area, and the protective gas is delivered to the storage area.

[0020] The semiconductor processing device and control method thereof provided in the embodiment of the present application, after the wafer is etched in the process chamber, during the process of transferring the wafer from the process chamber to the storage area, the residual gas remaining on the surface of the wafer during etching is removed by the degassing module; after the residual gas on the surface of the wafer is removed, a protective gas is transported to the surface of the wafer, which can avoid the wafer from reacting with nitrogen, hydrogen, water, etc. in the air to produce condensate, and solve the problem in the prior art that the condensate produced corrodes the surface of the wafer and causes damage to the surface of the wafer; in this way, the residual gas remaining on the surface of the wafer during etching can be removed, and the surface of the wafer can be kept clean, thereby ensuring the surface quality of the wafer and improving the product yield of the wafer. BRIEF DESCRIPTION OF THE DRAWINGS

[0021] In order to more clearly illustrate the technical solutions of the embodiments of the present application, the drawings required for use in the embodiments of the present application will be briefly introduced below. It should be understood that the following drawings only show certain embodiments of the present application and therefore should not be regarded as limiting the scope. For ordinary technicians in this field, other related drawings can be obtained based on these drawings without paying creative work.

[0022] Figure 1 It is one of the structural schematic diagrams of the semiconductor processing device provided in this embodiment;

[0023] Figure 2 This is the second structural schematic diagram of the semiconductor processing device provided in this embodiment;

[0024] Figure 3 This is the third structural schematic diagram of the semiconductor processing device provided in this embodiment;

[0025] Figure 4 This is the fourth structural schematic diagram of the semiconductor processing device provided in this embodiment;

[0026] Figure 5 This is one of the flow process diagrams of the wafer in the semiconductor processing device provided by this embodiment;

[0027] Figure 6 This is the second diagram of the flow process of the wafer in the semiconductor processing device provided by this embodiment;

[0028] Figure 7 This is the third diagram of the flow process of the wafer in the semiconductor processing device provided by this embodiment;

[0029] Figure 8 This is the fourth diagram of the flow process of the wafer in the semiconductor processing device provided by this embodiment;

[0030] Fig. 9 This is the fifth diagram of the flow process of the wafer in the semiconductor processing device provided by this embodiment;

[0031] Fig.10 This is the sixth diagram of the flow process of the wafer in the semiconductor processing device provided by this embodiment;

[0032] Fig.11 This is the seventh diagram of the wafer flow process in the semiconductor processing device provided in this embodiment.

[0033] Icons: 10-process chamber; 11-buffer area; 12-material storage area; 13-robot; 14-degassing module; 15-gas supply module; 20-wafer. DETAILED DESCRIPTION

[0034] The technical solutions in the embodiments of the present application will be clearly and completely described below in conjunction with the drawings in the embodiments of the present application.

[0035] In the description of this application, it should be noted that the terms "inside", "outside", etc. indicate the orientation or positional relationship based on the orientation or positional relationship shown in the drawings, or the orientation or positional relationship in which the product of the application is usually placed when in use, which is only for the convenience of describing this application and simplifying the description, and does not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore cannot be understood as a limitation on this application. In addition, the terms "first", "second", etc. are only used to distinguish the description, and cannot be understood as indicating or implying relative importance.

[0036] It should also be noted that, unless otherwise clearly specified and limited, the terms "disposed" and "connected" should be understood in a broad sense, for example, it can be a fixed connection, a detachable connection, or an integral connection; it can be a direct connection, or an indirect connection through an intermediate medium, or it can be the internal communication of two elements. For ordinary technicians in this field, the specific meanings of the above terms in this application can be understood according to specific circumstances.

[0037] Combination Figure 1 , Figure 5 As shown, an embodiment of the present application provides a semiconductor processing device (hereinafter referred to as the device), including: a machine, the machine is provided with a process chamber 10 for plasma etching, the process chamber 10 is respectively connected to a buffer area 11 and a material storage area 12, and a wafer 20 passes through the buffer area 11, the process chamber 10 and the material storage area 12 in sequence; it also includes a degassing module 14 and a gas delivery module 15, the degassing module 14 is used to remove residual gas remaining on the surface of the wafer 20 when the wafer 20 is transferred from the process chamber 10 to the material storage area 12; the gas delivery module 15 is used to remove the residual gas on the surface of the wafer 20 and then deliver a protective gas to the surface of the wafer 20 to protect the surface quality of the wafer 20.

[0038] like Figure 5As shown, the flow process of the wafer 20 in the device is as follows: the wafer 20 from the previous process is first transported to the storage area 12 for standby, and then the wafer 20 in the storage area 12 is transported to the buffer area 11, and then the buffer area 11 transports the wafer 20 one by one into the process chamber 10, and the wafer 20 completes plasma etching in the process chamber 10. The etched wafers 20 are then transferred one by one to the storage area 12, waiting for the wafer 20 to be transferred to the next process in batches.

[0039] After the wafer 20 is etched in the process chamber 10, it is then transferred from the process chamber 10 to the storage area 12. Figure 1 , Figure 2 As shown, the residual gas remaining on the surface of the wafer 20 during etching is removed by the degassing module 14; after the residual gas on the surface of the wafer 20 is removed, a protective gas is delivered to the surface of the wafer 20, which can prevent the wafer 20 from reacting with nitrogen, hydrogen, water, etc. in the air to produce condensate, and solve the problem that the condensate produced in the prior art corrodes the surface of the wafer 20 and causes damage to the surface of the wafer 20; in this way, the present application can not only remove the residual gas remaining on the surface of the wafer 20 during etching, but also keep the surface of the wafer 20 clean, ensure the surface quality of the wafer 20, and improve the product yield of the wafer 20. At the same time, it can also avoid the machine shutdown inspection caused by the surface damage of the wafer 20, and also improve the machine's working power.

[0040] Specifically, the degassing module 14 includes a first air pump and a first air pipe. The first air pump extracts air from the surface of the wafer 20 through the first air pipe to remove residual gas remaining on the surface of the wafer 20 .

[0041] The residual gas on the surface of the wafer 20 can be removed by means of vacuuming, wherein a first air pump provides power to vacuum gas from the surface of the wafer 20 through a first air pipe.

[0042] The process of removing residual gas by pumping is completed during the transfer of the wafer 20 from the process chamber 10 to the storage area 12. In some embodiments, the semiconductor processing device further includes a robot 13, which is used to complete the transfer of the wafer 20 between various areas, and the degassing module 14 is disposed on the robot 13.

[0043] The robot 13 reaches into the process chamber 10 to grab the wafer 20, and then transfers the wafer 20 to the storage area 12. During this process, the degassing module 14 on the robot 13 simultaneously pumps air toward the surface of the wafer 20 to remove residual gas. After the residual gas is completely removed, a protective gas is blown toward the surface of the wafer 20 to form a positive pressure environment to prevent the wafer 20 from contacting with water vapor or other impurity gases in the air. Therefore, the gas delivery module 15 for blowing protective gas toward the surface of the wafer 20 is also set on the robot 13 until the robot 13 delivers the wafer 20 into the storage area 12. At the same time, Figure 3 , Figure 4 As shown, a protective gas is also blown into the material storage area 12 to protect the wafers 20 .

[0044] The gas delivery module 15 includes a second gas pump and a second gas pipe, and the second gas pump delivers protective gas to the surface of the wafer 20 through the second gas pipe. For example, the protective gas includes an inert gas to prevent the wafer 20 from contacting air or other impurities.

[0045] Therefore, during the process of transferring the wafer 20 from the process chamber 10 to the storage area 12, the residual gas is firstly removed from the surface of the wafer 20 by vacuum pumping, and then a protective gas is blown onto the surface of the wafer 20 until the wafer 20 is sent into the storage area 12. Finally, a protective gas is blown into the storage area 12 through the gas delivery module 15 on the robot 13 to protect the wafer 20.

[0046] Since the above processes have a sequence, they can be controlled automatically. The semiconductor processing device also includes a controller, which is electrically connected to the degassing module 14, the gas delivery module 15 and the manipulator 13 respectively.

[0047] The controller controls the action sequence of the robot 13 , the degassing module 14 and the gas delivery module 15 to complete the surface treatment of the wafer 20 .

[0048] Of course, the controller is also connected to the device for etching the wafer 20 in the process chamber 10 to control the wafer 20 to complete the automatic etching process.

[0049] On this basis, an embodiment of the present application further provides a control method for a semiconductor processing device, which is used to control the above-mentioned semiconductor processing device. The method includes:

[0050] Step 200 : Control the wafer 20 to be transferred from the buffer area 11 to the process chamber 10 , so that the wafer 20 is etched in the process chamber 10 .

[0051] The wafer 20 is transported by the robot 13 , and the robot 13 is controlled to start and stop by a controller.

[0052] like Figures 5 to 8 As shown, Figure 5 The middle robot 13 transfers the wafer 20 from the storage area 12 to the buffer area 11; Figure 6 The wafers 20 in the middle buffer area 11 are transferred to the process chamber 10 by the robot 13, and the other wafers 20 are transferred from the storage area 12 to the buffer area 11 one by one, waiting to be transferred to the process chamber 10 one by one later; Figure 7 The middle wafer 20 is transferred into the process chamber 10 for etching; Figure 8 After the wafer 20 has completed the process, it is transferred out by the robot 13 .

[0053] Step 201 : Control the wafer 20 to be transferred from the process chamber 10 to the storage area 12 , and remove residual gas remaining on the surface of the wafer 20 during the transfer process of the wafer 20 .

[0054] The controller controls the robot 13 to grab the wafer 20 in the process chamber 10 and transfer it to the storage area 12 . During the transfer process, the degassing module 14 provided on the robot 13 is controlled to pump gas toward the surface of the wafer 20 to remove residual gas remaining on the surface of the wafer 20 .

[0055] Step 202 : After removing the residual gas on the surface of the wafer 20 , a protective gas is delivered to the surface of the wafer 20 until the wafer 20 is transferred to the storage area 12 .

[0056] After removing the residual gas on the surface of the wafer 20, the controller controls the gas delivery module 15 to deliver protective gas to the surface of the wafer 20 to protect the surface of the wafer 20 until the wafer 20 is transferred to the storage area 12. This means that after the wafer 20 is transferred to the storage area 12, protective gas is still delivered to the storage area 12 to protect the wafer 20 until the wafer 20 is transferred to the next process to prevent the wafer 20 from being damaged by contact with air or other impurities during the entire process.

[0057] Refer to Figures 9 to 11 As shown, Fig. 9 The wafer 20 is transferred to the storage area 12 by the robot 13, and the residual gas on the surface of the wafer 20 is removed by the degassing module 14 during the transfer process; Fig.10 After the residual gas on the surface of the wafer 20 is removed during the transfer process, a protective gas is immediately introduced to the surface of the wafer 20 to protect the wafer 20; Fig.11 After the middle wafer 20 is transferred back to the material storage area 12 , protective gas continues to be introduced into the material storage area 12 to protect the wafer 20 .

[0058] It should be noted that whether the residual gas on the surface of the wafer 20 has been completely removed can be detected in real time by using a detector. The detector is connected to a controller, and the controller controls the detector to start the detection. After the detection is completed and the controller determines that the residual gas on the surface of the wafer 20 has been completely removed, the controller starts the gas supply module 15 to supply protective gas to the surface of the wafer 20.

[0059] The control method of the semiconductor processing device includes the same structure and beneficial effects as the semiconductor processing device in the aforementioned embodiment. The structure and beneficial effects of the semiconductor processing device have been described in detail in the aforementioned embodiment and will not be repeated here.

[0060] The above description is only an embodiment of the present application and is not intended to limit the protection scope of the present application. For those skilled in the art, the present application may have various modifications and variations. Any modification, equivalent replacement, improvement, etc. made within the spirit and principle of the present application shall be included in the protection scope of the present application.

Claims

1. A semiconductor processing device, characterized in that: include: A machine, wherein the machine is provided with a process chamber for plasma etching, wherein the process chamber is respectively connected with a buffer area and a material storage area, and the wafer passes through the buffer area, the process chamber and the material storage area in sequence; It also includes a degassing module and a gas delivery module. The degassing module is used to remove residual gas remaining on the surface of the wafer when the wafer is transferred from the process chamber to the storage area; the gas delivery module is used to remove the residual gas on the surface of the wafer and then deliver protective gas to the surface of the wafer to protect the surface quality of the wafer.

2. The semiconductor processing device according to claim 1, wherein: The degassing module includes a first air pump and a first air pipe. The first air pump draws air from the surface of the wafer through the first air pipe to remove residual gas remaining on the surface of the wafer.

3. The semiconductor processing device according to claim 2, characterized in that It also includes a robot arm, which is used to transport the wafer, and the degassing module is arranged on the robot arm.

4. The semiconductor processing device according to claim 1, wherein: The gas delivery module includes a second gas pump and a second gas pipe, and the second gas pump delivers the protective gas to the wafer surface through the second gas pipe.

5. The semiconductor processing device according to claim 1 or 4, characterized in that: The protective gas includes an inert gas.

6. The semiconductor processing device according to claim 3, characterized in that It also includes a controller, which is electrically connected to the degassing module, the gas delivery module and the manipulator respectively.

7. A method for controlling a semiconductor processing device, for controlling the semiconductor processing device according to any one of claims 1 to 6, characterized in that: The method comprises: Controlling the wafer to be transferred from the buffer area to the process chamber so that the wafer is etched in the process chamber; Controlling the wafer to be transferred from the process chamber to the storage area, and removing residual gas remaining on the surface of the wafer during the wafer transfer process; After removing the residual gas on the surface of the wafer, a protective gas is delivered to the surface of the wafer until the wafer is transferred to the storage area.

8. The control method of a semiconductor processing device according to claim 7, characterized in that: The wafer is transferred by a robot.

9. The control method of a semiconductor processing device according to claim 8, characterized in that: The controlling the wafer to be transferred from the process chamber to the storage area and removing residual gas remaining on the surface of the wafer during the wafer transfer process includes: The robot is controlled to grab the wafer in the process chamber and transfer it to the storage area, and a degassing module arranged on the robot is used to evacuate gas from the surface of the wafer to remove residual gas remaining on the surface of the wafer.

10. The control method of a semiconductor processing device according to claim 7, wherein: After removing the residual gas on the surface of the wafer, supplying a protective gas to the surface of the wafer comprises: The gas delivery module is controlled to deliver protective gas to the surface of the wafer to protect the surface of the wafer until the wafer is transferred to the storage area, and the protective gas is delivered to the storage area.

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