A glass substrate with reduced stress and method of making the same

Abstract

The application discloses a stress-reduced glass substrate and a manufacturing method thereof. The glass substrate has at least two packaging substrate units. Each packaging substrate unit has a packaging area, and a TGV hole is arranged in the packaging area. A first sacrificial hole array and a plurality of stress release grooves are arranged outside the boundary line of each packaging substrate unit and surround each packaging substrate unit. A second sacrificial hole array is arranged inside the boundary line of each packaging substrate unit and surrounds the packaging area. The stress release grooves and the holes of the first sacrificial hole array are through holes or recessed blind holes arranged in the thickness direction of the glass substrate. The holes of the second sacrificial hole array are through holes arranged in the thickness direction of the glass substrate. The TGV hole, the stress release grooves, the holes of the first sacrificial hole array and the holes of the second sacrificial hole array are all filled with metal materials, and the metal materials in the holes of the second sacrificial hole array are connected in series to form an electrical test link. The TGV internal stress residual problem can be solved, and the product yield is improved.

Description

TECHNICAL FIELD

[0001] The present application relates to the field of semiconductor advanced packaging technology, in particular to a stress-reducing glass substrate and a manufacturing method thereof. BACKGROUND

[0002] Through glass via (TGV) is a kind of electrical interconnection structure vertically penetrating through a glass substrate, similar to through silicon via (TSV), with the ability of three-dimensional interconnection. TGV three-dimensional interconnection technology has excellent electrical and optical properties, good mechanical stability and low cost, and is a new technology that can replace organic via interconnection. TGV has wide application prospects in advanced packaging, integrated passive devices and optoelectronic device integration, and is considered as a key technology for the next generation of advanced packaging.

[0003] However, the current TGV technology is not mature, the performance of the hole-forming glass raw material is limited, the glass substrate metallization and high aspect ratio (depth / diameter of via hole) hole filling electroplating are difficult, and the problems such as the combination of copper and ABF and other build-up materials with the glass substrate have not been solved, which will affect the production and final reliability of the product. In addition, the TGV three-dimensional interconnection structure is complex, and the thermal stress caused by the mismatch of the thermal expansion coefficients between the glass substrate, copper and ABF and other materials will affect the performance and reliability of the device and packaging. Especially in the process of cutting the whole board into units, the internal stress balance of TGV is broken, and the stress is released to the cutting edge instantaneously, causing glass cracking and resulting in product scrap.

[0004] Therefore, it is necessary to develop a new glass substrate structure to solve the problem of TGV internal stress residual, improve product yield, and meet the market demand. SUMMARY

[0005] The present application aims to at least solve one of the above technical problems in the art. To this end, the purpose of the present application is to provide a stress-reducing glass substrate and a manufacturing method thereof, which can solve the problem of TGV internal stress residual and improve product yield.

[0006] To achieve the above-mentioned purpose, the first aspect of the present application provides a stress-reducing glass substrate, which has at least two packaging substrate units.

[0007] Each of the packaging substrate units has a packaging area, and the TGV hole is arranged in the packaging area.

[0008] The outer side of the boundary line of each of the packaging substrate units is provided with a first sacrificial hole array and a plurality of stress release grooves surrounding each of the packaging substrate units, and the inner side of the boundary line of each of the packaging substrate units is provided with a second sacrificial hole array surrounding the packaging area; the stress release grooves, the holes of the first sacrificial hole array are through holes or recessed blind holes provided along the thickness direction of the glass substrate; the holes of the second sacrificial hole array are through holes provided along the thickness direction of the glass substrate;

[0009] The TGV hole, the stress release groove, the hole of the first sacrificial hole array and the hole of the second sacrificial hole array are all filled with a metal material, and the metal materials of the holes in the second sacrificial hole array are connected in series to form an electrical test link.

[0010] According to the glass substrate for reducing stress provided by the application, when each packaging substrate unit is cut after packaging is completed, the stress release groove of the glass substrate can release the stress in the cutting process, avoid the TGV interface and glass crack phenomenon caused by excessive stress, and protect the four corners of the product from being damaged by the cutting tool; the first sacrificial hole array and the second sacrificial hole array can effectively inhibit the spread of the edge crack, limit the crack in the sacrificial hole array area, protect the inside of the packaging area from being damaged, and the electrical test link of the second sacrificial hole array can be used for on-off test to preliminarily judge whether the product is qualified; in addition, the bonding force between the metal material and the ABF and other build-up materials is strong, part of the sacrificial hole array can play the role of a rivet, enhance the bonding force between the glass substrate around the product and the ABF, and avoid the TGV interface delamination; thus, the product yield can be improved to meet the market demand.

[0011] In addition, the glass substrate for reducing stress provided by the application can have the following additional technical features:

[0012] Optionally, the packaging substrate units are in a rectangular shape, and the plurality of stress release grooves have bending grooves fitted on the outer straight corners of each of the packaging substrate units.

[0013] Further, the plurality of stress release grooves have strip-shaped grooves located between two adjacent bending grooves, and the strip-shaped grooves are fitted on the outer side of each of the packaging substrate units.

[0014] Optionally, the holes of the first sacrificial hole array are arranged in an array between two adjacent stress release grooves of each of the packaging substrate units.

[0015] Optionally, a metal disc is made at the opening of each of the holes of the first sacrificial hole array.

[0016] Optionally, the second sacrificial hole array has at least three circles to form at least three electrical test links.

[0017] Optionally, the diameter of each hole of the first array of sacrificial holes and the diameter of each hole of the second array of sacrificial holes are the same as the diameter of the TGV hole, and are smaller than the width of the stress release groove.

[0018] Optionally, the glass substrate has a plurality of packaging substrate units arranged in an array, at least two adjacent packaging substrate units in the same column are divided into a split module, or at least two adjacent packaging substrate units in the same row are divided into a split module; the outer side of the edge line of each split module is provided with the first array of sacrificial holes and a plurality of stress release grooves surrounding each split module, and the inner side of the edge line of each split module is provided with the second array of sacrificial holes.

[0019] Optionally, the glass substrate has opposite first and second surfaces, and a dielectric layer is covered on the first and second surfaces, and at least one metal wiring layer is formed on the packaging area.

[0020] To achieve the above-mentioned purpose, the second aspect of the present application provides a method for manufacturing the stress-reduced glass substrate, comprising the following steps:

[0021] providing a glass substrate, and forming the stress release groove on the glass substrate;

[0022] forming the TGV hole, the first array of sacrificial holes and the second array of sacrificial holes on the glass substrate;

[0023] filling metal material in the stress release groove, the TGV hole, each hole of the first array of sacrificial holes and each hole of the second array of sacrificial holes;

[0024] forming inner layer wiring on the packaging area of each packaging substrate unit, connecting the metal material of each hole in the second array of sacrificial holes to form the electrical test link, and forming a metal disc at the opening of each hole of the first array of sacrificial holes;

[0025] increasing layer wiring on the inner layer wiring of the packaging area to form a rewiring structure.

[0026] According to the method for manufacturing the stress-reduced glass substrate, the glass substrate structure manufactured by the method can release the stress caused by the mismatch of the thermal expansion coefficient of the material, protect the four corners of the finished product from being damaged by the cutting tool, prevent the edge crack from spreading to the internal pattern by the array of sacrificial holes, and preliminarily judge the reliability of the product by the electrical test link, thereby improving the product yield and meeting the market demand.

[0027] Optionally, laser cutting is performed on the glass substrate to form the stress release groove.

[0028] Optionally, laser-induced, deep etching is performed on the glass substrate to form the TGV hole, the first array of sacrificial holes, and the second array of sacrificial holes.

[0029] Optionally, the step of filling the metal material in the stress release groove, the TGV hole, each hole of the first array of sacrificial holes, and each hole of the second array of sacrificial holes comprises:

[0030] forming a seed layer on the inner wall of the TGV hole, the inner wall of the stress release groove, the inner wall of each hole of the first array of sacrificial holes, and the inner wall of each hole of the second array of sacrificial holes;

[0031] forming a metal conductive layer on the seed layer of the TGV hole, the stress release groove, each hole of the first array of sacrificial holes, and each hole of the second array of sacrificial holes.

[0032] Optionally, the metal conductive layer is formed on the seed layer of the TGV hole, the stress release groove, each hole of the first array of sacrificial holes, and each hole of the second array of sacrificial holes by using a subtractive method or a modified semi-additive method, and an inner layer circuit is formed on the packaging area, the metal material in each hole of the second array of sacrificial holes is connected in series to form the electrical test link, and a metal disc is formed at the opening of each hole of the first array of sacrificial holes. BRIEF DESCRIPTION OF DRAWINGS

[0033] Figure 1 a stress distribution diagram of a glass substrate;

[0034] Figure 2 a top view of a glass substrate with a stress release groove according to an embodiment of the present application;

[0035] Figure 3 a top view of a glass substrate with reduced stress according to an embodiment of the present application;

[0036] Figure 4 is a partial enlarged view of Figure 3

[0037] Figure 5 a process flow diagram of a method for manufacturing a glass substrate with reduced stress according to an embodiment of the present application;

[0038] Figures 6A-6G a cross-sectional schematic view of a single package substrate unit of each step of the method for manufacturing a glass substrate with reduced stress according to an embodiment of the present application;

[0039] Figure 7 a top view of a single package substrate unit of a glass substrate with reduced stress according to an embodiment of the present application;

[0040] ​Figures 8A-8G FIG. 1 is a cross-sectional view of a single package substrate unit of each step of manufacturing a redistribution structure on a stress-reduced glass substrate according to an embodiment of the present application;

[0041] Label explanation:

[0042] Split module 10;

[0043] Package substrate unit 100, package area 110, TGV hole 111;

[0044] First sacrificial hole array 200;

[0045] Stress release groove 300, bending groove 310, strip groove 320;

[0046] Second sacrificial hole array 400;

[0047] Metal material 500, seed layer 510, metal conductive layer 520;

[0048] Redistribution structure 600. DETAILED DESCRIPTION

[0049] Embodiments of the present application are described in detail below with reference to the attached drawings, which show examples of embodiments of the present application. The same or similar components have the same or similar reference numbers throughout the drawings. The embodiments described below are examples and are intended to explain the present application, and should not be understood as limiting the present application.

[0050] In order to better understand the above technical solutions, exemplary embodiments of the present application will be described in more detail below with reference to the accompanying drawings. Although the exemplary embodiments of the present application are shown in the drawings, it should be understood that the present application can be implemented in various forms and should not be limited by the embodiments described herein. On the contrary, these embodiments are provided to enable a more thorough understanding of the present application and to fully convey the scope of the present application to those skilled in the art.

[0051] Reference should be made to Figure 1 In Figure 1 (a) shows that the residual stress in the TGV of the existing glass substrate is distributed in all directions, and the place with the maximum stress is at the interface of the TGV and the build-up material and the corners of the glass substrate. The horizontal stress is too large, which causes problems such as delamination of the TGV interface and cracks at the corners of the glass substrate. Especially during the process of cutting the whole plate into units, the stress balance in the TGV is broken, and the stress is released instantaneously to the cutting edge, causing the glass to crack and resulting in product scrap.

[0052] To this end, the present application provides a stress-reducing glass substrate, which has at least two packaging substrate units 100; each packaging substrate unit 100 has a packaging area 110, and a TGV hole 111 is provided in the packaging area 110; the outer side of the boundary line of each packaging substrate unit 100 is provided with a first sacrificial hole array 200 and a plurality of stress release grooves 300 surrounding each packaging substrate unit 100, and the inner side of the boundary line of each packaging substrate unit 100 is provided with a second sacrificial hole array 400 surrounding the packaging area 110; the stress release grooves 300 and each hole of the first sacrificial hole array 200 are through holes or recessed blind holes arranged along the thickness direction of the glass substrate; each hole of the second sacrificial hole array 400 is a through hole arranged along the thickness direction of the glass substrate; the TGV hole 111, the stress release grooves 300, each hole of the first sacrificial hole array 200 and each hole of the second sacrificial hole array 400 are all filled with metal material 500, and the metal materials of each hole in the second sacrificial hole array 400 are connected in series to form an electrical test link.

[0053] Therefore, if Figure 1 As shown in (b), the simulation results show that the stress release groove 300 can effectively release the surface stress caused by the mismatch between the thermal expansion coefficients of the build-up material and the glass substrate; at the same time, due to the presence of the stress release groove 300, the four corners of the unit do not directly contact the tool during the subsequent cutting of the finished product, thereby protecting the four corners from being damaged by the tool. When there are glass-based cracks caused by factors such as mismatch in the thermal expansion coefficients of the materials and defects on the edge of the unit after cutting, the first sacrificial hole array 200 and the second sacrificial hole array 400 can prevent the cracks from spreading and confine the cracks to the sacrificial hole array area, thereby protecting the internal structure of the unit from damage. At the same time, an electrical test link is made in the second sacrificial hole array 400 area of ​​the glass substrate. After the finished product is completed, a window is opened to expose the electrical test link, and then it is cut into finished unit products and subjected to a conduction test to preliminarily determine whether the product is qualified.

[0054] Based on this, please refer to Figures 2 to 4In a specific embodiment of the present application, a stress-reduced glass substrate is provided by arranging a first array of sacrificial holes 200 and a plurality of stress release grooves 300 around the encapsulation substrate unit 100 outside the boundary line of the encapsulation substrate unit 100, and arranging a second array of sacrificial holes 400 around the encapsulation area 110 inside the boundary line of the encapsulation substrate unit 100; that is, a certain length and width of stress release grooves and sacrificial hole arrays are opened around the Unit. The size of the stress release grooves varies according to the size of the Unit. Among them, the stress release grooves 300 and the holes of the first array of sacrificial holes 200 are through holes or blind holes arranged through the thickness direction of the glass substrate; more specifically, in this embodiment, the stress release grooves 300 and the holes of the first array of sacrificial holes 200 are through holes arranged through the thickness direction of the glass substrate, and the holes of the second array of sacrificial holes 400 are through holes arranged through the thickness direction of the glass substrate.

[0055] Then, the TGV hole 111, the stress release groove 300, the holes of the first array of sacrificial holes 200 and the holes of the second array of sacrificial holes 400 are all filled with a metal material 500, and the metal materials in the holes of the second array of sacrificial holes 400 are connected in series to form an electrical test link. In this way, the TGV hole 111 can form a conductive through hole.

[0056] As an example, the encapsulation substrate unit 100 is in a rectangular shape, and the plurality of stress release grooves 300 have bending grooves 310 fitted on the outer side of each rectangular face of the encapsulation substrate unit 100. It can be understood that the shape of the stress release groove 300 matches the outer contour design of the encapsulation substrate unit 100. As shown in Figure 3 the encapsulation substrate unit 100 is in a rectangular shape, then the bending grooves 310 fitted on the outer side of each rectangular face are arranged on the four right angles of the rectangle.

[0057] Further, the plurality of stress release grooves 300 have strip grooves 320 located between two adjacent bending grooves 310, and the strip grooves 320 are fitted on the outer side of each encapsulation substrate unit 100. That is, the strip grooves 320 are symmetrically arranged on the four sides of the rectangular encapsulation substrate unit 100; in this way, the four corners of the Unit can be better protected from being damaged by the knife during subsequent product cutting.

[0058] In combination Figure 4For the arrangement of the sacrifice hole array, in the embodiment, the holes of the first sacrifice hole array 200 are arranged in an array between two adjacent stress release grooves 300 of each package substrate unit 100; that is, the first sacrifice hole array 200 is arranged in an array around the four outer sides of the rectangular package substrate unit 100, with the array being interrupted at the positions corresponding to the stress release grooves 300. Meanwhile, the second sacrifice hole array 400 is arranged around the package region 110 and is also arranged adjacent to the boundary line of the package substrate unit 100. In the embodiment, the second sacrifice holes 400 of the four inner sides of the rectangular package substrate unit 100 are all mirror-symmetrical to the first sacrifice hole array 200 of the outer sides with the boundary line as the center line; and the array of the second sacrifice hole array 400 is continuous on the inner side of the boundary line.

[0059] For example, the hole diameter of each hole of the first sacrifice hole array 200 and the hole diameter of each hole of the second sacrifice hole array 400 are the same as the hole diameter of the TGV hole 111 and are smaller than the width of the stress release groove 300. In this way, the holes can be uniformly manufactured, and the crack propagation can be better prevented.

[0060] More specifically, the first sacrifice hole array 200 is arranged with at least three circles of sacrifice hole rows around the rectangular package substrate unit 100; similarly, the second sacrifice hole array 400 is also arranged with at least three circles of sacrifice hole rows; in this way, at least three circles of electrical test links can be formed on the second sacrifice hole array 400. Of course, in other examples, the number of circles of the sacrifice hole array can be changed according to the size of the package region 110.

[0061] More specifically, the three circles of electrical test links of the second sacrifice hole array 400 are used to preliminarily determine whether the product is qualified, and the determination criteria are shown in Table 1.

[0062] Table 1: Test result determination of the electrical test links of the sacrifice hole array region

[0063]

[0064] For example, a metal disc is manufactured at the opening of each hole of the first sacrifice hole array 200. The metal disc can play the role of a rivet, further enhancing the bonding force between the glass substrate and the ABF or other build-up materials.

[0065] In addition, as Figure 3 and Figure 4As shown, as an example, a glass substrate has a plurality of package substrate units 100 distributed in an array. At least two adjacent package substrate units 100 in the same column are divided into segmentation modules 10, or at least two adjacent package substrate units 100 in the same row are divided into segmentation modules 10. A first sacrificial hole array 200 and a plurality of stress relief grooves 300 are provided on the outside of the edge of each segmentation module 10, surrounding each segmentation module 10. A second sacrificial hole array is provided on the inside of the edge of each segmentation module 10. It is understood that after the provided glass substrate is manufactured as a finished product, it can be cut into large modules first, and then each package substrate unit 100 can be segmented to cut into unit finished products. For the segmentation of large modules, the aforementioned first sacrificial hole array 200, stress relief grooves 300, and second sacrificial hole array 400 are also provided on the edge of the segmentation module 10 of the glass substrate. Thus, the stress relief grooves 300 effectively relieve surface stress caused by the mismatch in thermal expansion coefficients between the build-up material and the glass substrate. Furthermore, the presence of the stress relief grooves 300 prevents the corners of the segmentation module 10 from direct contact with the cutting tool during cutting, protecting them from damage. If cracks in the glass substrate are caused by factors such as material thermal expansion mismatches or defects at the edges of the segmentation module after cutting, the first and second sacrificial hole arrays 200 and 400 prevent the cracks from spreading, confining them to the sacrificial hole array area, thereby protecting the internal structure of the segmentation module 10 from damage.

[0066] Specifically, if Figure 3 As shown, in this embodiment, two adjacent package substrate units 100 in the same row are divided into segmentation modules 10. During cutting, the segmentation modules 10 are first cut, and then each package substrate unit 100 is cut. The layout and number of stress relief grooves 300, first sacrificial hole array 200, and second sacrificial hole array 400 of each segmentation module 10 are the same as those of each package substrate unit 100 described above. The difference is that the second sacrificial hole array 400 of the segmentation module 10 does not have an electrical test link design.

[0067] As an example, a glass substrate has a first surface and a second surface opposite to each other. Figure 3 Based on the illustrated glass substrate, a packaging process can be performed on the glass substrate. For example, a dielectric layer can be coated on both the first and second surfaces, and at least one metal wiring layer can be formed in the dielectric layer located in the packaging area 110, thereby forming a redistribution structure. After the redistribution structure is completed, solder mask processing and chip packaging can be performed, such as conventional board-level packaging operations.

[0068] On the other hand, the method for manufacturing the above-mentioned stress-reduced glass substrate can be referred to Figure 5 , which is a process flow chart of the manufacturing method, comprising the following steps:

[0069] S1: providing a glass substrate on which the stress release groove is made;

[0070] S2: making the TGV hole, the first array of sacrificial holes and the second array of sacrificial holes on the glass substrate;

[0071] S3: filling the stress release groove, the TGV hole, each hole of the first array of sacrificial holes and each hole of the second array of sacrificial holes with metal material;

[0072] S4: making inner layer circuit on the packaging area of each packaging substrate unit, connecting the metal material of each hole of the second array of sacrificial holes in series to make the electrical test link, and making metal disc at the opening of each hole of the first array of sacrificial holes;

[0073] S5: building up wiring on the inner layer circuit of the packaging area to make the rewiring structure.

[0074] The method first makes the stress release groove 300 on the glass substrate at the corresponding position, and then continues to make the TGV hole 111, the first array of sacrificial holes 200 and the second array of sacrificial holes 400 on the glass substrate at the corresponding position; then fills the stress release groove 300, the TGV hole 111, each hole of the first array of sacrificial holes 200 and each hole of the second array of sacrificial holes 400 with metal material 500; subsequently, makes inner layer circuit on the packaging area 110 of each packaging substrate unit 100, connects the metal material of each hole of the second array of sacrificial holes 400 in series to make the electrical test link, and makes metal disc at the opening of each hole of the first array of sacrificial holes 200; finally, builds up wiring on the inner layer circuit of the packaging area 110 to make the rewiring structure 600.

[0075] Thus, the glass substrate structure made can release the stress caused by the mismatch of the thermal expansion coefficient of the materials, protect the four corners of the finished product from being damaged by the cutting tool, the array of sacrificial holes can prevent the edge crack from spreading to the internal pattern, and the electrical test link can preliminarily judge the product reliability, improve the product yield, and meet the market demand.

[0076] Specifically, please refer to Figures 6A-6G The cross-sectional schematic diagram of a single packaging substrate unit showing each step of the method for making the stress-reduced glass substrate is shown.

[0077] As Figure 6AAs shown, first, a glass substrate is provided, the thickness of the glass substrate is between 0.2-1.6mm, and the length and width are greater than 50*50mm. The glass substrate has high heat resistance, extremely low Df (Dissipation factor), higher Young's modulus, and compared with traditional organic substrates, the glass substrate size is not limited and has the advantages of low cost, strong mechanical stability, excellent high-frequency electrical performance, etc. Then, the glass substrate is cut with a groove by using one of nanosecond laser, picosecond laser, femtosecond laser, and the whole plate is etched after the laser-induced hole is formed, so as to manufacture a stress release groove 300; wherein the manufacturing position of the stress release groove 300 is as shown in Figure 2 Finally, the glass substrate is laser-induced and deeply etched to obtain a TGV hole 111 and a sacrificial hole array (a first sacrificial hole array 200 and a second sacrificial hole array 400). The hole diameter of each hole of the sacrificial hole array is consistent with the TGV hole (100μm), and the pitch is consistent with the minimum pitch of the TGV (200μm). The laser-induced principle is to generate a denatured area on the glass surface by using a pulsed laser, and the denatured area has a faster etching rate than the non-denatured area in a hydrofluoric acid system or an alkaline system. Based on this phenomenon, through holes and blind holes can be manufactured on the glass. The technology has fast hole forming rate, uniform quality, good hole diameter consistency, and no cracks around the hole. Because of the difference in etching rate between the denatured and non-denatured areas, the technology can control the perpendicularity of the hole wall by adjusting the laser parameters. Because the etching drug etches the glass isotropically, the final stress release groove has a width of 0.3mm and a length of 6mm. The manufacturing positions of the TGV hole 111 and the sacrificial hole array are as shown in Figure 3 and Figure 4 Thus, three circles of sacrificial hole arrays can be formed inside and outside the edges of the unit and array patterns.

[0078] Then, the metal material 500 is filled in the stress release groove 300, the TGV hole 111, each hole of the first sacrificial hole array 200, and each hole of the second sacrificial hole array 400.

[0079] Specifically, first, as shown in Figure 6B the glass substrate is metallized, that is, a seed layer 510 is formed on the opposite first surface and second surface of the glass substrate, and the inner wall of the TGV hole 111, the inner wall of the stress release groove 300, the inner wall of each hole of the first sacrificial hole array 200, and the inner wall of each hole of the second sacrificial hole array 400.

[0080] More specifically, physical vapor deposition (PVD) is used to metallize the glass substrate, providing a seed layer 510 for subsequent electroplating. The specific method is as follows: under vacuum conditions, a glow discharge is generated between the cathode and the cathode, and the gas molecules between the electrodes are ionized and charged. The positive ions are accelerated by the negative potential of the cathode and collide with the target material, sputtering atoms from the target material. The sputtered atoms are then deposited on the substrate at the anode to form a metal film. The process includes degassing → plasma etching → sputtering titanium → sputtering copper. The degassing temperature is 60-150°C, the time is 30-3000s, and the gases used in plasma etching are one or more of oxygen, carbon tetrafluoride, and argon. The power is 500-5000W, and the processing time is 1-8 minutes. In addition to PVD, glass substrate metallization technologies also include metal oxide sintering, polymer + chemical copper deposition, etc. The appropriate metallization method should be selected according to the product design.

[0081] Then as Figures 6C-6G As shown, after the above-mentioned PVD sputtering is completed, a subtractive method is used to fill the stress relief grooves 300, the TGV holes 111, the holes of the first sacrificial hole array 200, and the holes of the second sacrificial hole array 400 with metal material 500. In addition, inner layer circuits are formed on the packaging area 110 of each packaging substrate unit 100, the metal material of each hole in the second sacrificial hole array 400 is connected in series to form an electrical test link, and metal pads are formed at the openings of each hole in the first sacrificial hole array 200. Of course, in other examples, a modified semi-additive method (mSAP) can also be used, which involves applying a dry film after PVD metallization, exposing and developing, electroplating and filling the holes, patterning, and then stripping the film, flash etching the copper, and etching the titanium.

[0082] In this embodiment, if Figure 6C As shown, a metal conductive layer 520 is formed on the surface of the seed layer 510. The metal conductive layer 520 completely fills the TGV holes 111, the stress relief grooves 300, the holes of the first sacrificial hole array 200, and the holes of the second sacrificial hole array 400, and covers the seed layer 510 on the first and second surfaces. In other words, after the above-mentioned PVD sputtering is completed, the glass substrate is electroplated to fill the stress relief grooves 300, the holes of the sacrificial hole array, and the through-glass vias with copper. The final copper layer thickness is approximately 15μm. The electroplating method adopts one of VCP, SPP, and horizontal plating.

[0083] Subsequently, inner layer circuits are fabricated on the packaging area 110 of each packaging substrate unit 100 , metal materials of each hole in the second sacrificial hole array 400 are connected in series to fabricate an electrical test link, and metal pads are fabricated at the openings of each hole in the first sacrificial hole array 200 .

[0084] Specifically, ifFigure 6D As shown, first, a dry film is formed on the metal conductive layer 520. Among them, a vacuum film laminating machine can be used to laminate the dry film on both sides of the glass substrate. The dry film is composed of three parts: polyethylene film (PE), photoresist film and polyester film (PET), and has the function of blocking electroplating and etching. Ultraviolet irradiation can cause the dry film to undergo polymerization reaction, and after the material is polymerized and solidified, it can remain on the surface of the substrate to form an etching and plating resistant layer. Then, as shown in Figure 6E and 6F exposed metal conductive layer 520 and seed layer 510 after etching development. That is, after the above dry film lamination is completed, exposure and development are carried out. The exposure function is to solidify the dry film and form an etching and plating resistant layer. Depending on the type of dry film used, the exposure machine can select one or a combination of g-line, i-line, h-line. The light source used by the exposure machine is a halogen lamp, a high-pressure mercury lamp, an iodine gallium lamp, etc. The function of development is to remove the dry film in the unexposed area to expose the circuit pattern. The developing solution can use sodium hydroxide, sodium carbonate, sodium bicarbonate, etc. Etching is to sequentially etch and remove the electroplated copper layer, sputtered copper layer and sputtered titanium layer in the developed area to make the core layer pattern. The copper layer etching solution uses a sulfuric acid hydrogen peroxide system, and the titanium layer etching solution is a mixture of various aqueous solutions such as fluorides (HF, etc.), oxidizing acids (HNO3, H2O2, etc.), non-oxidizing salts (NaHCO3, etc.), alkali hydroxides (NaOH, KOH), etc. Titanium layer etching can also use ion milling, reactive ion etching and plasma etching technologies for dry etching. Finally, as shown in Figure 6G the dry film is removed to make the inner layer circuit, the electrical test link and the metal disc on each packaging substrate unit 100. A strong alkali solution can be used to remove the dry film from the copper surface.

[0085] As shown in Figure 7 only in the second sacrificial hole array 400 area inside the unit (packaging substrate unit 100) to make an electrical test link for subsequent finished product detection. The remaining sacrificial hole array area only makes a copper disc to play the role of a rivet to enhance the bonding force of the glass substrate and the ABF and other build-up materials.

[0086] Finally, based on the above glass substrate, the inner layer circuit in the packaging area 110 can be built up to make a rewiring structure 600. In this embodiment, the rewiring structure 600 is made by building up ABF film, and the number of build-up times is selected according to actual conditions. As shown in Figures 8A-8G the first layer of the rewiring layer of the rewiring structure 600 is made on the inner layer circuit in the packaging area 110 by laminating ABF film on both sides of the glass substrate → laser drilling → chemical Desmear slag removal + chemical copper PTH → laminating dry film → exposure → development → electroplating → film removal → etching.

[0087] Specifically, first, Figure 8A As shown, ABF films are formed on both the first and second surfaces of the glass substrate. ABF coating is applied by laminating the films on both the top and bottom surfaces of the glass substrate. ABF materials have a low coefficient of thermal expansion and low dielectric loss, making them easy to fabricate fine circuits, while also providing excellent mechanical properties and durability.

[0088] Then, if Figure 8B As shown, blind vias are laser drilled through the ABF film within the encapsulation region 110 of the glass substrate. The blind via diameter is ≤60 μm, and the plate diameter is ≤80 μm. A UV laser drill, a CO2 laser drill, an excimer laser, or an ultrafast laser drill can be used. The laser used can be a continuous laser, a quasi-continuous laser, a nanosecond laser, a picosecond laser, or a femtosecond laser.

[0089] Then, if Figure 8C As shown, electroless copper deposition is performed. After the aforementioned drilling is completed, chemical copper plating is used to form a copper layer. The copper layer is orange-red and has a thickness of 5-15μm. The overall gloss must be uniform, with a backlight level of ≥9. The board surface must be free of severe oxidation, fibers, or fingerprints. The main components of the plating solution are copper sulfate, potassium sodium tartrate, sodium hydroxide, formaldehyde, ethylenediaminetetraacetic acid, triethanolamine, sodium carbonate, and deionized water.

[0090] Finally, if Figures 8D-8G As shown, after copper plating, dry film is applied on the copper layer formed by chemical copper plating → exposure and development → electroplating (graphic electroplating is performed after the above exposure and development, and the circuit can meet the 8 / 8μm line width spacing. The electroplating method adopts one of VCP, SPP, and horizontal electroplating) → film stripping and etching (after the graphic electroplating is completed, the dry film is removed, and the non-graphic area copper layer is etched away); after completing this series of processes, the production of a graphic circuit layer on the ABF film is completed (that is, the production of the first rewiring layer of the rewiring structure 600). Subsequently, a second rewiring layer can be added on the first rewiring layer of the rewiring structure 600. Among them, the specific number of layers of the rewiring layer of the rewiring structure 600 can be designed according to the actual application needs. The way of adding layers is to repeat the above Figures 8A-8G The process involved is to produce the added layer circuit.

[0091] At this point, the production of the stress-reduced glass substrate is completed, thereby providing a glass substrate that can solve the problem of residual stress inside TGV and improve product yield.

[0092] In the description of the present application, it is to be understood that the orientation or positional relationship indicated by the terms "center", "longitudinal", "lateral", "length", "width", "thickness", "upper", "lower", "front", "back", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise" and the like is based on the orientation or positional relationship shown in the drawings, and is only for the convenience of describing the present application and simplifying the description, and does not indicate or imply that the device or element referred to must have a particular orientation, be constructed and operated in a particular orientation, and therefore cannot be understood as a limitation of the present application.

[0093] In addition, the terms "first", "second" are only for descriptive purposes and cannot be understood as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Therefore, the features defined with "first", "second" can explicitly or implicitly include one or more of the features. In the description of the present application, the meaning of "a plurality of" is two or more, unless otherwise explicitly specified and limited.

[0094] In the present application, unless otherwise explicitly specified and limited, the terms "mounting", "connecting", "connecting", "fixing" and the like should be understood broadly, for example, it can be fixed connection, or detachable connection, or integral; it can be mechanical connection, or electrical connection; it can be directly connected, or indirectly connected through intermediate medium, it can be the internal communication of two elements or the interaction relationship between two elements. For those skilled in the art, the specific meaning of the above terms in the present application can be understood according to the specific circumstances.

[0095] In the present application, unless otherwise explicitly specified and limited, the first feature "on" or "under" the second feature can include that the first and second features are in direct contact, or that the first and second features are not in direct contact but are in contact through another feature between them. Moreover, the first feature "on", "above" and "on" the second feature includes that the first feature is directly above and obliquely above the second feature, or only indicates that the horizontal height of the first feature is higher than that of the second feature. The first feature "under", "below" and "under" the second feature includes that the first feature is directly below and obliquely below the second feature, or only indicates that the horizontal height of the first feature is less than that of the second feature.

[0096] In the description of this specification, the reference terms "one embodiment", "some embodiments", "example", "specific example", or "some examples" mean that the specific features, structures, materials or characteristics described in conjunction with the embodiment or example are included in at least one embodiment or example of the present invention. In this specification, the schematic expressions of the above terms should not be understood as necessarily referring to the same embodiment or example. Moreover, the specific features, structures, materials or characteristics described can be combined in any one or more embodiments or examples in a suitable manner. In addition, those skilled in the art can combine and combine different embodiments or examples described in this specification.

[0097] Although the embodiments of the present invention have been shown and described above, it will be understood that the above embodiments are illustrative and are not to be construed as limitations on the present invention. A person skilled in the art may change, modify, replace and modify the above embodiments within the scope of the present invention.

Claims

1. A glass substrate with reduced stress, characterized in that: The glass substrate has at least two packaging substrate units; Each of the packaging substrate units has a packaging area, and a TGV hole is provided in the packaging area; A first sacrificial hole array and a plurality of stress release grooves are provided on the outer side of the boundary line of each packaging substrate unit surrounding each packaging substrate unit, and a second sacrificial hole array is provided on the inner side of the boundary line of each packaging substrate unit surrounding the packaging area; The stress release groove and each hole of the first sacrificial hole array are through holes or recessed blind holes arranged along the thickness direction of the glass substrate; each hole of the second sacrificial hole array is a through hole arranged along the thickness direction of the glass substrate; The TGV hole, the stress relief slot, each hole of the first sacrificial hole array and each hole of the second sacrificial hole array are filled with metal material, and the metal materials of each hole in the second sacrificial hole array are connected in series to form an electrical test link.

2. The stress-reduced glass substrate according to claim 1, wherein The package substrate unit is rectangular in shape, and the plurality of stress release grooves include bending grooves that are attached to outer right-angled surfaces of the package substrate units.

3. The stress-reduced glass substrate according to claim 2, wherein: The plurality of stress release grooves include a strip groove located between two adjacent bending grooves, and the strip groove is attached to the outer surface of each packaging substrate unit.

4. The stress-reduced glass substrate according to claim 1, wherein The holes of the first sacrificial hole array are arranged in an array between two adjacent stress release grooves of each packaging substrate unit.

5. The stress-reduced glass substrate according to claim 1, wherein A metal disk is made at the opening of each hole of the first sacrificial hole array.

6. The stress-reduced glass substrate according to claim 1, wherein The second sacrificial hole array has at least three turns to form an electrical test link with at least three turns.

7. The stress-reduced glass substrate according to claim 1, wherein: The aperture of each hole in the first sacrificial hole array and the aperture of each hole in the second sacrificial hole array are both the same as the aperture of the TGV hole, and are both smaller than the width of the stress release groove.

8. The stress-reduced glass substrate according to any one of claims 1 to 7, wherein: The glass substrate has a plurality of packaging substrate units distributed in an array, and at least two adjacent packaging substrate units in the same column are divided into a segmentation module, or at least two adjacent packaging substrate units in the same row are divided into a segmentation module; the outer side of the edge line of each segmentation module is provided with the first sacrificial hole array and the plurality of stress release grooves surrounding each segmentation module, and the inner side of the edge line of each segmentation module is provided with the second sacrificial hole array.

9. The stress-reduced glass substrate according to claim 1, wherein: The glass substrate has a first surface and a second surface opposite to each other. The first surface and the second surface are both covered with a dielectric layer. The dielectric layer is provided with at least one metal wiring layer in the packaging area.

10. A method for manufacturing a glass substrate with reduced stress according to any one of claims 1 to 9, characterized in that: The following steps are involved: Providing a glass substrate, and making the stress relief groove on the glass substrate; Fabricating the TGV hole, the first sacrificial hole array, and the second sacrificial hole array on the glass substrate; filling metal material in the stress relief groove, the TGV hole, each hole of the first sacrificial hole array, and each hole of the second sacrificial hole array; Fabricating an inner layer circuit on the packaging area of ​​each packaging substrate unit, connecting the metal materials of each hole in the second sacrificial hole array in series to produce the electrical test link, and fabricating a metal disk at the opening of each hole in the first sacrificial hole array; Adding wiring layers on the inner layer circuits in the packaging area to produce a redistribution structure.

11. The method for manufacturing a glass substrate with reduced stress according to claim 10, wherein: Laser cutting is performed on the glass substrate to produce the stress relief grooves.

12. The method for manufacturing a glass substrate with reduced stress according to claim 10, wherein: Laser induction and deep etching are performed on the glass substrate to produce the TGV holes, the first sacrificial hole array, and the second sacrificial hole array.

13. The method for manufacturing a glass substrate with reduced stress according to claim 10, wherein: The step of filling the stress relief groove, the TGV hole, each hole of the first sacrificial hole array, and each hole of the second sacrificial hole array with metal material comprises: forming a seed layer on the first and second opposite surfaces of the glass substrate, the inner wall of the TGV hole, the inner wall of the stress release groove, the inner wall of each hole of the first sacrificial hole array, and the inner wall of each hole of the second sacrificial hole array; A metal conductive layer is formed on the seed layer of the TGV hole, the stress relief groove, each hole of the first sacrificial hole array, and each hole of the second sacrificial hole array.

14. The method for manufacturing a glass substrate with reduced stress according to claim 13, wherein: The metal conductive layer is formed on the seed layer of the TGV hole, the stress release groove, each hole of the first sacrificial hole array and each hole of the second sacrificial hole array by using a subtractive method or a modified semi-additive method, and an inner layer circuit is made on the packaging area. The metal materials of each hole in the second sacrificial hole array are connected in series to produce the electrical test link, and a metal disk is made at the opening of each hole of the first sacrificial hole array.

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