Antenna device

Abstract

The invention discloses an antenna device which comprises a transparent substrate and a plurality of antenna units arranged on the transparent substrate. The transparent substrate has a first surface and a second surface opposite to the first surface. A light-transmitting area is arranged between the adjacent antenna units. Each antenna unit comprises an antenna electrode, a grounding electrode, a redistribution structure and a wafer. The antenna electrode is arranged on the first surface of the transparent substrate. The grounding electrode is arranged on the second surface of the transparent substrate. A width of the ground electrode in the first direction is greater than a width of the antenna electrode in the first direction. The redistribution structure is coupled to the antenna electrode. The grounding electrode is located between the redistribution structure and the transparent substrate. The wafer is bonded to the redistribution structure.

Description

Technical Field

[0001] The invention relates to an antenna device. Background Art

[0002] With the development of communication technology, antenna devices are increasingly used. For example, televisions, radios, vehicles, mobile phones, etc. can all be equipped with antennas to receive and send various signals. Some antenna devices are integrated into printed circuit boards and formed by the electroplating process used in the manufacture of printed circuit boards. However, printed circuit boards are usually opaque and will block the user's view if they are installed on windows. Summary of the invention

[0003] The present invention provides an antenna device, wherein a light-transmitting area is provided between antenna units, so that a user can see the scene behind the antenna device through the antenna device. In addition, the design of the grounding electrode can reduce the interference of external signals on the antenna electrode.

[0004] At least one embodiment of the present invention provides an antenna device, which includes a transparent substrate and a plurality of antenna units arranged on the transparent substrate. The transparent substrate has a first surface and a second surface opposite to the first surface. There is a light-transmitting area between adjacent antenna units. Each antenna unit includes an antenna electrode, a ground electrode, a rewiring structure and a chip. The antenna electrode is arranged on the first surface of the transparent substrate. The ground electrode is arranged on the second surface of the transparent substrate. The width of the ground electrode in the first direction is greater than the width of the antenna electrode in the first direction. The rewiring structure is coupled to the antenna electrode. The ground electrode is located between the rewiring structure and the transparent substrate. The chip is bonded to the rewiring structure. BRIEF DESCRIPTION OF THE DRAWINGS

[0005] Figure 1A is a cross-sectional schematic diagram of an antenna device according to an embodiment of the present invention.

[0006] Figure 1B yes Figure 1A A bottom view schematically shows an antenna unit of an antenna device.

[0007] Figure 1C yes Figure 1A A schematic top view of a ground electrode and a first antenna signal line of an antenna device.

[0008] Figure 1D and Figure 1E yes Figure 1A A schematic top view of a shielding structure of an antenna device and a corresponding antenna signal line.

[0009] Figure 2 It is a bottom view schematically showing an antenna unit of an antenna device according to an embodiment of the present invention.

[0010] Figure 3 It is a bottom view schematically showing an antenna unit of an antenna device according to an embodiment of the present invention.

[0011] Figure 4 is a bottom view schematically showing an antenna device according to an embodiment of the present invention.

[0012] Figure 5A is a cross-sectional schematic diagram of an antenna device according to an embodiment of the present invention.

[0013] Figure 5B yes Figure 5A A schematic top view of a shielding structure of an antenna device and a corresponding driving electrode.

[0014] Fig. 6A and Figure 6B It is a cross-sectional schematic diagram of an antenna device along different cross-sections according to an embodiment of the present invention.

[0015] Figure 6C yes Fig. 6A and Figure 6B A schematic top view of an antenna device.

[0016] Fig. 7A is a graph of S11 parameter of some antenna devices according to an embodiment of the present invention.

[0017] Figure 7B is a graph of S21 parameters of some antenna devices according to an embodiment of the present invention.

[0018] Wherein, the reference numerals are:

[0019] 1A, 1D, 1E, 1F: Antenna device

[0020] 10A, 10B, 10C, 10D, 10E, 10F: Antenna unit

[0021] 100:Transparent substrate

[0022] 102: First side

[0023] 104: Side 2

[0024] 110: substrate through hole

[0025] 120: Antenna electrode

[0026] 142: Grounding electrode

[0027] 142h,372h: Opening

[0028] 144: First antenna signal line

[0029] 146:Connecting line

[0030] 301: buffer layer

[0031] 304: Gate dielectric layer

[0032] 305: first dielectric layer

[0033] 306: second dielectric layer

[0034] 308,309: Insulation layer

[0035] 330: Semiconductor layer

[0036] 340: First circuit layer

[0037] 342: Gate

[0038] 350: Second circuit layer

[0039] 352: Source / Drain

[0040] 354: Digital signal line

[0041] 360: First redistribution layer

[0042] 362,364,366,367,368,371,372,372E,372F,373,374,374E,374F,375,376,377,377F,378,379,379E,382,383,384,385,387,387F,388,389: conductive features 362a,372a,382a,387a: shielding

[0043] 362b, 372b, 382b, 387b: second conductive hole

[0044] 364a,374a,384a,384F3: Connecting part

[0045] 364b, 374b, 384b: first conductive hole

[0046] 370: Second redistribution layer

[0047] 374E1,384F1: Contact part

[0048] 374E2: Electrode

[0049] 384F2: Wire

[0050] 410: Chip

[0051] 412: Conductive connection structure

[0052] 420: Bottom filling material

[0053] AL: Active Component Layer

[0054] BL: Rewiring Structure

[0055] CSA, CSE, CSF: Circuit Structure

[0056] D1a,D2a,D1b,D2b,D1c,D2c,D1d,D2d,D1e,D2e: Radius

[0057] D4a, D4b, D4e: aperture

[0058] E1: First Direction

[0059] E2: Second Direction

[0060] HD,VD: Arrangement direction

[0061] SS:Solid structure

[0062] SR: Solid ring structure

[0063] T: Active Components

[0064] TR: Translucent Zone

[0065] TR1: The first light transmission area

[0066] TR2: Second light transmission area

[0067] D3a,D3b,D3d,D4d,D3e,W1,W2,W3,W4,X,Y: width

[0068] θa, θb, θe: angle DETAILED DESCRIPTION

[0069] The present invention is described in detail below with reference to the accompanying drawings and specific embodiments, but is not intended to limit the present invention.

[0070] Figure 1A is a cross-sectional schematic diagram of an antenna device 1A according to an embodiment of the present invention. Figure 1B yes Figure 1A A bottom view of an antenna unit 10A of an antenna device 1A, wherein Figure 1B The antenna electrode 120 and the ground electrode 142 are shown, and other structures are omitted. Figure 1C yes Figure 1A Schematic top view of a ground electrode 142 and a first antenna signal line 144 of an antenna device 1A. Figure 1D and Figure 1E yes Figure 1A A schematic top view of a shielding structure of an antenna device 1A and an antenna signal line.

[0071] Please refer to Figure 1A and Figure 1B , the antenna device 1A includes a transparent substrate 100 and a plurality of antenna units 10A disposed on the transparent substrate 100. In some embodiments, the width X (or spacing) of the antenna unit 10A in the first direction E1 is 0.5λ0-1λ0, where λ0 is the wavelength of the wireless signal to be received or sent in the air. In some embodiments, the width X (or spacing) of the antenna unit 10A in the first direction E1 is equal to or not equal to the width Y (or spacing) of the antenna unit 10A in the second direction E2, where the first direction E1 is perpendicular to the second direction E2. For example, the width X and the width Y are both 0.5λ0.

[0072] The transparent substrate 100 has a first surface 102 and a second surface 104 opposite to the first surface 102. In some embodiments, the thickness of the transparent substrate 100 is 0.1 mm to 1.1 mm. For example, the thickness of the transparent substrate 100 is 0.5 mm, 0.7 mm or 1.1 mm.

[0073] In some embodiments, the transparent substrate 100 is made of glass, organic polymer or other applicable materials. Glass is, for example, Pyrex glass. Quartz (such as fused silica glass), soda-lime glass, aluminosilicate glass, borosilicate glass, aluminoborosilicate glass, or other suitable materials or combinations thereof.

[0074] The antenna units 10A are arranged in an array to form an antenna array. There is a light-transmitting region TR between adjacent antenna units 10A. In some embodiments, no conductive structure is provided in the light-transmitting region TR, but the present invention is not limited thereto. In other embodiments, a metal grid or a transparent conductive material through which light can pass is provided in the light-transmitting region TR. In some embodiments, the transmittance of the light-transmitting region TR is greater than 50%.

[0075] Each antenna unit 10A includes an antenna electrode 120 , a circuit structure CSA, and a chip 410 . In addition, in this embodiment, each antenna unit 10A further includes a substrate through hole 110 .

[0076] The antenna electrode 120 is disposed on the first surface 102 of the transparent substrate 100. In some embodiments, the transparent substrate 100 has a flat first surface 102. In other embodiments, the transparent substrate 100 optionally includes a groove recessed from the first surface 102. By disposing the antenna electrode 120 in the aforementioned groove, the surface flatness of the antenna device 1A can be improved. However, the aforementioned groove for accommodating the antenna electrode 120 can be omitted.

[0077] The through substrate via 110 is located in the transparent substrate 100 and extends from the first surface 102 to the second surface 104. The through substrate via 110 is connected to the antenna electrode 120.

[0078] The circuit structure CSA is located on the second surface 104 of the transparent substrate 100. In the present embodiment, the circuit structure CSA includes a ground electrode 142, a first antenna signal line 144, a buffer layer 301, an active device layer AL, and a redistribution structure BL. In the present embodiment, the substrate through hole 110 is electrically connected to the redistribution structure BL of the circuit structure CSA.

[0079] Please refer to Figure 1A and Figure 1C ,in Figure 1C Only one of the first antenna signal lines 144 and the surrounding ground electrode 142 is shown. The ground electrode 142 and the first antenna signal line 144 are located on the second surface 104 of the transparent substrate 100. The first antenna signal line 144 is connected to the antenna electrode 120 through the substrate through hole 110.

[0080] In this embodiment, the ground electrode 142 has an opening 142h. The first antenna signal line 144 is disposed in the opening 142h. The ground electrode 142 surrounds the first antenna signal line 144. The number of first antenna signal lines 144 and substrate through holes 110 in each antenna unit 10A can be adjusted as required. In some embodiments, one or more first antenna signal lines 144 are connected to the same antenna electrode 120 through one or more substrate through holes 110.

[0081] In some embodiments, the first antenna signal line 144 is circular, and its radius D1c is 50 micrometers to 200 micrometers. In some embodiments, the opening 142h is circular, and its radius D2c is 60 micrometers to 300 micrometers.

[0082] The width W2 of the ground electrode 142 in the first direction E1 is greater than the width W1 of the antenna electrode 120 in the first direction E1. Figure 1BAs shown. With such a design, the interference of external signals on the antenna electrode 120 can be effectively reduced. In some embodiments, the width W2 of the ground electrode 142 in the first direction E1 is equal to or not equal to the width W4 of the ground electrode 142 in the second direction E2, and the width W1 of the antenna electrode 120 in the first direction E1 is equal to or not equal to the width W3 of the antenna electrode 120 in the second direction E2.

[0083] Please refer to Figure 1B In some embodiments, the footprint A of the antenna unit 10A (ie, the product of the width X and the width Y) is greater than the footprint A of the ground electrode 142. ground (ie, the product of the width W2 and the width W4), and the ground electrode 142 has an area A ground Greater than the footprint A of the antenna electrode 120 patch (ie, the product of the width W1 and the width W3). In some embodiments, the ground electrode 142 has an area A of ground Greater than or equal to the footprint A of the antenna electrode 120 patch 1.2 times of the ground electrode 142, so that the ground electrode 142 can better cover the antenna electrode 120. In some embodiments, the ground electrode 142 has an area A of ground The area A of the antenna unit 10A is 100% to 35%, and the area A of the antenna electrode 120 is patch 95% to 5% of the area A of the antenna unit 10A. In some embodiments, since the ground electrode 142 and the antenna electrode 120 may include a metal mesh structure or a transparent conductive material, even if the area A of the ground electrode 142 is ground The footprint A of the antenna electrode 120 patch The antenna device 1A can still retain the light-transmitting region TR close to the footprint A of the antenna unit 10A.

[0084] It should be noted that in this embodiment, both the ground electrode 142 and the antenna electrode 120 have rectangular outlines, but the present invention is not limited thereto. The shapes of the ground electrode 142 and the antenna electrode 120 can be adjusted according to actual needs.

[0085] In some embodiments, the materials of the substrate through hole 110, the antenna electrode 120, the ground electrode 142 and the first antenna signal line 144 include copper (Cu), aluminum (Al), gold (Au), silver (Ag), titanium (Ti), nickel (Ni), tungsten (W), conductive oxides (such as indium tin oxide, indium zinc oxide, etc.) or other suitable conductive materials or combinations of the above materials.

[0086] The buffer layer 301 is located on the transparent substrate 100, the ground electrode 142 and the first antenna signal line 144. In some embodiments, the buffer layer 301 includes a transparent material, such as an organic material (e.g., polyimide, polyethylene terephthalate, epoxy resin, etc.) or an inorganic material (e.g., silicon nitride, silicon oxide, etc.) or a combination of the above materials. In some embodiments, since the thickness of the ground electrode 142 and the first antenna signal line 144 is 5 microns to 10 microns. In order to achieve the effect of planarization, the thickness of the buffer layer 301 is preferably 8 microns to 20 microns, and the thickness of the buffer layer 301 is not less than the thickness of the ground electrode 142. In order to achieve this thickness to obtain the effect of planarization, the buffer layer 301 is preferably made of an organic material.

[0087] In some embodiments, the buffer layer 301 has high transmittance and low dielectric loss (dissipation factor, Df). For example, the transmittance of the buffer layer 301 for light with a wavelength of 400nm to 800nm ​​is greater than or equal to 50%. In some embodiments, the dielectric constant (dielectric constant, Dk) of the buffer layer 301 is less than 4, and the dielectric loss is less than 0.004. In some embodiments, the buffer layer 301 covers the first antenna signal line 144 for transmitting high-frequency radio frequency (RF) signals. The use of a buffer layer 301 with a larger thickness and low dielectric loss is beneficial to reduce the loss of high-frequency signals.

[0088] The active device layer AL is located on the buffer layer 301. The active device layer AL includes a semiconductor layer 330, a gate dielectric layer 304, a first circuit layer 340, a first dielectric layer 305, a second circuit layer 350, and a second dielectric layer 306 formed in sequence. In some embodiments, the active device layer AL may further include more conductive layers and insulating layers, and the present invention does not limit the number of conductive layers and insulating layers in the active device layer AL.

[0089] The first circuit layer 340 includes a gate 342, and the second circuit layer 350 includes a plurality of source / drain electrodes 352 and a digital signal line 354. The gate 342 of the first circuit layer 340, the plurality of source / drain electrodes 352 of the second circuit layer 350, and the semiconductor layer 330 cooperate with each other to form an active device (e.g., a thin film transistor) T. In some embodiments, the active device T in the active device layer AL overlaps the ground electrode 142. In some embodiments, the active device T overlaps the antenna electrode 120.

[0090] In some embodiments, a portion of the second circuit layer 350 is electrically connected to a portion of the first circuit layer 340 , but the invention is not limited thereto.

[0091] In some embodiments, the materials of the first circuit layer 340 and the second circuit layer 350 include copper (Cu), aluminum (Al), gold (Au), silver (Ag), titanium (Ti), nickel (Ni), tungsten (W), conductive oxides (such as indium tin oxide, indium zinc oxide, etc.) or other suitable materials or combinations of the above materials. In some embodiments, the materials of the gate dielectric layer 304, the first dielectric layer 305 and the second dielectric layer 306 include organic polymers (such as polyimide, polyethylene terephthalate, etc.) or inorganic materials (such as silicon oxide, silicon nitride, silicon oxynitride, aluminum oxide, zirconium oxide, hafnium oxide or other suitable materials or combinations of the above materials).

[0092] The redistribution structure BL is located on the active device layer AL, and the active device layer AL, the buffer layer 301, and the ground electrode 142 are located between the redistribution structure BL and the second surface 104 of the transparent substrate 100. The redistribution structure BL includes a first redistribution layer 360, an insulating layer 308, and a second redistribution layer 370 formed in sequence. In some embodiments, the redistribution structure BL may further include more conductive layers and insulating layers, and the present invention does not limit the number of conductive layers and insulating layers in the redistribution structure BL.

[0093] In some embodiments, the conductive via passes through at least one of the insulating layer 308 , the active device layer AL, and the buffer layer 301 , and is used to electrically connect the first redistribution layer 360 and / or the second redistribution layer 370 to other conductive layers.

[0094] The first redistribution layer 360 includes conductive features 362, 364, 366 and 368. In this embodiment, conductive features 362, 364, 366 and 368 are respectively referred to as first shielding structures, second antenna signal lines, shielding electrodes and transmission lines.

[0095] In the present embodiment, the conductive feature 362 completely surrounds or partially surrounds the conductive feature 364 on the top surface of the second dielectric layer 306 (which may also be referred to as an insulating layer in some embodiments).

[0096] Please refer to Figure 1A and Figure 1D, the conductive feature 364 (i.e., the second antenna signal line) is electrically connected to the first antenna signal line 144. Specifically, the conductive feature 364 includes a connection portion 364a extending on the top surface of the second dielectric layer 306 (which may also be referred to as an insulating layer in some embodiments) and a first conductive via 364b located below the connection portion 364a. The connection portion 364a overlaps the wafer 410. The first conductive via 364b passes through at least one of the second dielectric layer 306, the first dielectric layer 305, the gate dielectric layer 304, and the buffer layer 301. In the present embodiment, the first conductive via 364b passes through the second dielectric layer 306, the first dielectric layer 305, the gate dielectric layer 304, and the buffer layer 301, and contacts the first antenna signal line 144.

[0097] In some embodiments, the connecting portion 364a is circular, and its radius D1a is 50 micrometers to 200 micrometers. In some embodiments, the hole diameter D4a of the first conductive hole 364b is 60 micrometers to 200 micrometers.

[0098] The conductive feature 362 (i.e., the first shielding structure) is electrically connected to the ground electrode 142. The conductive feature 362 includes a shielding portion 362a and a plurality of second conductive vias 362b located below the shielding portion 362a. The shielding portion 362a extends on the top surface of the second dielectric layer 306 and completely surrounds the connecting portion 364a of the conductive feature 364. The plurality of second conductive vias 362b pass through at least one of the second dielectric layer 306, the first dielectric layer 305, the gate dielectric layer 304, and the buffer layer 301. In the present embodiment, the second conductive vias 362b pass through the second dielectric layer 306, the first dielectric layer 305, the gate dielectric layer 304, and the buffer layer 301, and are electrically connected to the ground electrode 142. In the present embodiment, the second conductive vias 362b are laterally separated from each other and arranged around the first conductive vias 364b, thereby reducing the interference of external signals on the first conductive vias 364b.

[0099] In some embodiments, the shielding portion 362a is a ring surrounding the connecting portion 364a, wherein the radius D2a of the circular space inside the shielding portion 362a is 60 microns to 300 microns, and the width D3a of the solid part of the shielding portion 362a is 100 microns to 400 microns. In some embodiments, the aperture of the second conductive hole 362b is substantially the same as the aperture D4a of the first conductive hole 364b. In some embodiments, the distance between the center of the first conductive hole 364b and the center of the second conductive hole 362b and between the centers of adjacent second conductive holes 362b can be as small as 110 microns, for example, 110 microns to 500 microns.

[0100] In some embodiments, an angle θa between a line connecting the center of one second conductive via 362b and the center of the first conductive via 364b and a line connecting the center of another adjacent second conductive via 362b and the center of the first conductive via 364b is 30 degrees to 70 degrees.

[0101] The conductive feature 366 shields the active device T to reduce interference of other signals on the active device T. In some embodiments, the conductive feature 366 and the ground electrode 142 are both connected to the ground signal. The conductive feature 368 is electrically connected to the active device T.

[0102] Please refer to Figure 1A , the second redistribution layer 370 includes a conductive feature 371, a conductive feature 372, a conductive feature 373, a conductive feature 374, a conductive feature 375, a conductive feature 378, and a conductive feature 379. In the present embodiment, the conductive feature 371, the conductive feature 372, the conductive feature 373, the conductive feature 374, the conductive feature 375, the conductive feature 378, and the conductive feature 379 can be respectively referred to as a chip pad, a second shielding structure, a radio frequency signal input line, a third antenna signal line, a power line, a transmission line, and a pad.

[0103] In the present embodiment, the conductive feature 372 completely surrounds or partially surrounds the conductive feature 374 on the top surface of the insulating layer 308 .

[0104] Please refer to Figure 1A and Figure 1E , the conductive feature 374 (i.e., the third antenna signal line) is electrically connected to the conductive feature 364 (i.e., the second antenna signal line). Specifically, the conductive feature 374 includes a connection portion 374a extending on the top surface of the insulating layer 308 and a first conductive via 374b located below the connection portion 374a. The connection portion 374a overlaps the wafer 410. The first conductive via 374b passes through the insulating layer 308 and contacts the conductive feature 364.

[0105] In some embodiments, the connecting portion 374a is circular, and its radius D1b is 50 micrometers to 200 micrometers. In some embodiments, the hole diameter D4b of the first conductive hole 374b is 60 micrometers to 200 micrometers.

[0106] The conductive feature 372 (i.e., the second shielding structure) is electrically connected to the conductive feature 362 (i.e., the first shielding structure). The conductive feature 372 includes a shielding portion 372a and a plurality of second conductive vias 372b located below the shielding portion 372a. The shielding portion 372a extends on the top surface of the insulating layer 308 and completely surrounds the connecting portion 374a of the conductive feature 374. The plurality of second conductive vias 372b pass through the insulating layer 308 and are electrically connected to the conductive feature 362. In the present embodiment, the second conductive vias 372b are laterally separated from each other and arranged around the first conductive vias 374b, thereby reducing the interference of external signals on the first conductive vias 374b.

[0107] In some embodiments, the shielding portion 372a is a ring surrounding the connecting portion 374a, wherein the radius D2b of the circular space inside the shielding portion 372a is 60 microns to 300 microns, and the width D3b of the solid portion of the shielding portion 372a is 100 microns to 400 microns. In some embodiments, the aperture of the second conductive hole 372b is substantially the same as the aperture D4b of the first conductive hole 374b. In some embodiments, the distance between the center of the first conductive hole 374b and the center of the second conductive hole 372b and between the centers of adjacent second conductive holes 372b can be as small as 110 microns, for example, 110 microns to 500 microns.

[0108] In some embodiments, an angle θb between a line connecting the center of one second conductive via 372b and the center of the first conductive via 374b and a line connecting the center of another adjacent second conductive via 372b and the center of the first conductive via 374b is 30 degrees to 70 degrees.

[0109] The conductive feature 378 is electrically connected to the active device T through the conductive feature 368. In some embodiments, the conductive feature 379 is used to connect to an external circuit board or device (not shown).

[0110] In some embodiments, the materials of the first redistribution layer 360 and the second redistribution layer 370 include copper (Cu), aluminum (Al), gold (Au), silver (Ag), titanium (Ti), nickel (Ni), tungsten (W), conductive oxides (such as indium tin oxide, indium zinc oxide, etc.) or other suitable materials or combinations of the above materials. In this embodiment, the first redistribution layer 360 and the second redistribution layer 370 each include a seed layer and a metal layer formed thereon. The seed layer is formed by, for example, sputtering, chemical plating or other suitable methods, and the metal layer is formed by electroplating.

[0111] In some embodiments, the material of the insulating layer 308 includes an organic material (e.g., polyimide, polyethylene terephthalate, epoxy resin, etc.) or an inorganic material (e.g., silicon nitride, silicon oxide, etc.) or a combination of the above materials. In some embodiments, the insulating layer 308 has high transmittance and low dielectric loss (dissipation factor, Df). For example, the transmittance of the insulating layer 308 for light with a wavelength of 400nm to 800nm ​​is greater than or equal to 50%. In some embodiments, the dielectric constant (dielectric constant, Dk) of the insulating layer 308 is less than 4, and the dielectric loss is less than 0.004.

[0112] In some embodiments, the second redistribution layer 370 of the redistribution structure BL is configured to transmit chip power signals and RF feed signals, while the first redistribution layer 360 is configured to transmit ground signals. In some embodiments, the first wiring layer 340 and the second wiring layer 350 of the active device layer AL are configured to transmit power signals and digital signals of the active device T. For example, the digital signal line 354 is configured to transmit digital signals. Since the operating frequency of the above digital signals is relatively low, even if the film thickness of the gate dielectric layer 304, the first dielectric layer 305 and the second dielectric layer 306 in the active device layer AL is relatively thin, the signal will not be significantly lost. In contrast, since the redistribution structure BL is used to transmit high-frequency RF signals, the insulating layer 308 in the redistribution structure BL needs to have a thicker thickness. Therefore, the thickness of the insulating layer 308 is greater than the thickness of the gate dielectric layer 304, the first dielectric layer 305 and the second dielectric layer 306. In some embodiments, the thickness of the digital signal line 354 is less than the thickness of the RF signal input line (i.e., the conductive feature 373).

[0113] The chip 410 is bonded to the second redistribution layer 370 of the redistribution structure BL. In some embodiments, the chip 410 is electrically connected to one or more of the conductive features 371, 372, 373, 374, 375, 378, and 379. In some embodiments, the chip 410 is bonded to the conductive features 371, 372, 373, 374, 378 through a conductive connection structure 412. The conductive connection structure 412 is, for example, solder, conductive glue, or other suitable structures. In some embodiments, the bottom filling material 420 is located between the chip 410 and the redistribution structure BL and surrounds the connection point between the chip 410 and the redistribution structure BL (i.e., the conductive connection structure 412). In some embodiments, the bottom filling material 420 may include a thermal interface material (TIM) to facilitate heat dissipation of the chip 410. For example, the thermal conductivity of the bottom filling material 420 is greater than 0.3 W / m K.

[0114] In some embodiments, the chip 410 includes a beamformer integrated circuit (BFIC) or other active / passive components. In some embodiments, the ground electrode 142, the antenna electrode 120, and the active component T are electrically connected to the chip 410. In some embodiments, the circuit including the active component T can be disposed in the active component layer AL, thereby reducing the circuits required to be disposed in the chip 410, and thus, the size of the chip 410 can be reduced.

[0115] Based on the above, the user can see the scene behind the antenna device 1A through the light-transmitting region TR of the antenna device 1A. In addition, the ground electrode 142, the conductive feature 362 and the conductive feature 372 can reduce the interference of other signals on the antenna signal.

[0116] In some embodiments, Figure 1D and Figure 1E The structure shown is called a concentric structure. Generally speaking, the position of the concentric structure projected onto the transparent substrate 100 needs to overlap with the ground electrode 142, so that the concentric structure can be electrically connected to the ground electrode 142 through a conductive hole (e.g., the second conductive hole 362b). Therefore, the size of the ground electrode 142 is limited by the concentric structure. If the area of ​​the concentric structure is too large, the ground electrode 142 must be enlarged so that each concentric structure can be electrically connected to the ground electrode 142 through a conductive hole. The area of ​​the concentric structure is limited by the aperture of the conductive hole (e.g., the first conductive hole 374b, 364b and the second conductive hole 372b, 362b). Only by reducing the aperture of the conductive hole can the area of ​​the concentric structure be reduced.

[0117] Table 1 shows the characteristics of various antenna units, where each antenna electrode is fed with signals by two substrate through holes and each antenna electrode overlaps two concentric structures. In addition, in Table 1, the footprint A of each antenna unit is 5 mm × 5 mm (i.e., the product of width X and width Y), and the footprint A of each antenna electrode is patch The orthographic projection area of ​​the concentric structure in Table 1 is 0.02 to 0.4 times the footprint Apatch of the antenna electrode.

[0118] Table 1

[0119]

[0120] From Table 1, we can see that in order to make the antenna bandwidth greater than or equal to 2.5 GHz, the ground electrode area A ground Preferably, the footprint A of the antenna electrode patch (4.41mm2 ) is 2.3 times or more, for example, about 2.3 times to 3.1 times, as in Examples 2 to 5. In addition, the ground electrode of Example 1 has an area A of ground is equal to the footprint A of the antenna unit, resulting in the aperture ratio of the antenna unit of Example 1 being 0. Fig. 7A and Figure 7B The S11 parameter curves and the S21 parameter curves of Examples 2 to 6 in Table 1 are shown.

[0121] Figure 2 FIG. 1 is a bottom view of an antenna unit 10B of an antenna device according to an embodiment of the present invention. It must be noted that: Figure 2 The implementation examples are used Figures 1A to 1E The component numbers and partial contents of the embodiments are the same, wherein the same or similar numbers are used to represent the same or similar components, and the description of the same technical contents is omitted. The description of the omitted parts can be referred to the aforementioned embodiments, and will not be repeated here.

[0122] Figure 2 The antenna unit 10B and Figure 1B The difference between the antenna unit 10A and the antenna unit 10B is that the ground electrode 142 of the antenna unit 10B has a mesh structure. With such a design, the penetration rate of the antenna unit 10B can be improved.

[0123] Figure 3 FIG. 1 is a bottom view of an antenna unit 10C of an antenna device according to an embodiment of the present invention. It should be noted that: Figure 3 The implementation examples are used Figure 2 The component numbers and partial contents of the embodiments are the same, wherein the same or similar numbers are used to represent the same or similar components, and the description of the same technical contents is omitted. The description of the omitted parts can be referred to the aforementioned embodiments, and will not be repeated here.

[0124] Figure 3 The antenna unit 10C and Figure 2 The difference between the antenna unit 10B and the antenna unit 10C is that in addition to the ground electrode 142 having a mesh structure, the antenna electrode 120 of the antenna unit 10C also has a mesh structure.

[0125] In this embodiment, the antenna signal is directly fed into the antenna electrode 120 through the substrate through hole 110, and the position where the antenna electrode 120 contacts the substrate through hole 110 has a solid structure SS. In addition, in order to reduce the interference of external signals on the antenna signal, the ground electrode 142 includes a solid ring structure SR surrounding the substrate through hole 110.

[0126] Figure 4 1 is a bottom view of an antenna device 1D according to an embodiment of the present invention. It must be noted that: Figure 4 The implementation examples are used Figures 1A to 1E The component numbers and partial contents of the embodiments are the same, wherein the same or similar numbers are used to represent the same or similar components, and the description of the same technical contents is omitted. The description of the omitted parts can be referred to the aforementioned embodiments, and will not be repeated here.

[0127] Figure 4 The antenna device 1D and Figure 1A The difference between the antenna device 1A and the antenna device 1D is that in the antenna device 1D, the ground electrodes 142 of the antenna units 10D adjacent to each other in the arrangement direction HD are electrically connected to each other through the connecting wire 146. The ground electrodes 142 of the antenna units 10D adjacent to each other in the arrangement direction VD are separated from each other. The arrangement direction HD is perpendicular to the arrangement direction VD. In some embodiments, the ground electrode 142 and the connecting wire 146 are integrally formed.

[0128] In this embodiment, a first light-transmitting region TR1 surrounded by the ground electrode 142 and the connecting line 146 is provided between the adjacent antenna units 10D in the arrangement direction HD, and a second light-transmitting region TR2 is provided between two adjacent rows of antenna units 10D in the arrangement direction VD.

[0129] Figure 5A is a cross-sectional schematic diagram of an antenna device 1E according to an embodiment of the present invention. Figure 5B yes Figure 5A The shielding structure of the antenna device 1E and the top view of the corresponding driving electrode are shown in FIG. Figure 5A and Figure 5B The implementation examples are used Figures 1A to 1E The component numbers and partial contents of the embodiments are the same, wherein the same or similar numbers are used to represent the same or similar components, and the description of the same technical contents is omitted. The description of the omitted parts can be referred to the aforementioned embodiments, and will not be repeated here.

[0130] Please refer to Figure 5A and Figure 5B In this embodiment, each antenna unit 10E includes an antenna electrode 120, a circuit structure CSE, and a chip 410. In this embodiment, the antenna signal is not directly fed into the antenna electrode 120 through the substrate through hole. Instead, the antenna signal is coupled to the antenna electrode 120 in a radiation manner through the conductive feature 374E (i.e., the driving electrode).

[0131] In the present embodiment, the redistribution structure BL includes a first redistribution layer 360 , an insulating layer 308 , a second redistribution layer 370 , an insulating layer 309 , and a third redistribution layer 380 which are formed in sequence.

[0132] In some embodiments, the conductive via passes through at least one of the insulating layer 309, the insulating layer 308, the active device layer AL and the buffer layer 301, and is used to electrically connect the first redistribution layer 360, the second redistribution layer 370 and / or the third redistribution layer 380 to other conductive layers.

[0133] The first redistribution layer 360 includes a conductive feature 366 and a conductive feature 367. In this embodiment, the conductive feature 366 and the conductive feature 367 can be referred to as a shielding electrode and a first ground signal line, respectively.

[0134] The conductive feature 366 shields the active device T to reduce interference of other signals on the active device T. The conductive feature 367 is electrically connected to the ground electrode 142 via a conductive via penetrating the active device layer AL and the buffer layer 301 .

[0135] The second redistribution layer 370 includes a conductive feature 372E, a conductive feature 374E, a conductive feature 377, a conductive feature 378, and a conductive feature 379E. In the present embodiment, the conductive feature 372E, the conductive feature 374E, the conductive feature 377, the conductive feature 378, and the conductive feature 379E can be respectively referred to as a first shielding structure, a driving electrode, a second ground signal line, a transmission line, and a signal line.

[0136] In the present embodiment, the conductive feature 372E partially surrounds the conductive feature 374E on the top surface of the insulating layer 308 .

[0137] Please refer to Figure 5A and Figure 5B The conductive feature 374E (ie, the driving electrode) includes a contact portion 374E1 and an electrode portion 374E2 connected to the contact portion 374E1. Both the contact portion 374E1 and the electrode portion 374E2 extend on the top surface of the insulating layer 308.

[0138] In some embodiments, the contact portion 374E1 is circular, and its radius D1d is 50 micrometers to 200 micrometers. In some embodiments, the width D4d of the electrode portion 374E2 is 20 micrometers to 250 micrometers. The width of the contact portion 374E1 (i.e., twice the radius D1d) is greater than the width D4d of the electrode portion 374E2. The electrode portion 374E2 overlaps the antenna electrode 120 and the opening 142h of the ground electrode 142.

[0139] The conductive feature 372E (i.e., the first shielding structure) is electrically connected to the ground signal. In the present embodiment, the conductive feature 372E extends on the top surface of the insulating layer 308. The conductive feature 372E is a ring having an opening 372h and partially surrounds the contact portion 374E1 on the top surface of the insulating layer 308. The electrode portion 374E2 extends from the opening 372h on the top surface of the insulating layer 308 to the outside of the conductive feature 372E.

[0140] The conductive feature 372E is an open ring partially surrounding the contact portion 374E1 , wherein the radius D2d of the circular space inside the conductive feature 372E is 60 μm to 300 μm, and the width D3d of the solid portion of the conductive feature 372E is 100 μm to 400 μm.

[0141] Conductive feature 377 is electrically connected to ground electrode 142 through conductive feature 367 . Conductive feature 378 is electrically connected to active device T. In some embodiments, conductive feature 379E is electrically connected to digital signal line 354 .

[0142] Please refer to Figure 5A , the third redistribution layer 380 includes a conductive feature 382, ​​a conductive feature 383, a conductive feature 384, a conductive feature 385, a conductive feature 387, a conductive feature 388, and a conductive feature 389. In this embodiment, the conductive feature 382, ​​the conductive feature 383, the conductive feature 384, the conductive feature 385, the conductive feature 387, the conductive feature 388, and the conductive feature 389 can be respectively referred to as a second shielding structure, a radio frequency signal input line, an antenna signal line, a power line, a third ground signal line, a transmission line, and a pad.

[0143] In the present embodiment, conductive feature 382 partially surrounds conductive feature 384 on the top surface of insulating layer 309. In other embodiments, conductive feature 382 completely surrounds conductive feature 384 on the top surface of insulating layer 309.

[0144] Conductive feature 384 (i.e., antenna signal line) is electrically connected to conductive feature 374E (i.e., driving electrode). Specifically, conductive feature 384 includes a connection portion 384a extending on the top surface of insulating layer 309 and a first conductive via 384b located below connection portion 384a. Connection portion 384a overlaps wafer 410. First conductive via 384b passes through insulating layer 309 and contacts contact portion 374E1 of conductive feature 374E.

[0145] Conductive feature 382 (i.e., second shielding structure) is electrically connected to conductive feature 372E (i.e., first shielding structure). Conductive feature 382 includes shielding portion 382a and one or more second conductive vias 382b located below shielding portion 382a. Shielding portion 382a extends on the top surface of insulating layer 309. In some embodiments, shielding portion 382a partially surrounds connecting portion 384a of conductive feature 384. Second conductive via 382b passes through insulating layer 309 and is electrically connected to conductive feature 372E.

[0146] Conductive feature 387 is electrically connected to ground electrode 142 through conductive feature 377 and conductive feature 367. Conductive feature 388 is electrically connected to active device T through conductive feature 378. In some embodiments, conductive feature 389 is used to connect to an external circuit board or device (not shown).

[0147] In some embodiments, the materials of the first redistribution layer 360, the second redistribution layer 370, and the third redistribution layer 380 include copper (Cu), aluminum (Al), gold (Au), silver (Ag), titanium (Ti), nickel (Ni), tungsten (W), conductive oxides (such as indium tin oxide, indium zinc oxide, etc.) or other suitable materials or combinations of the above materials. In this embodiment, the first redistribution layer 360, the second redistribution layer 370, and the third redistribution layer 380 each include a seed layer and a metal layer formed thereon. The seed layer is formed by, for example, sputtering, chemical plating, or other suitable methods, and the metal layer is formed by electroplating.

[0148] In some embodiments, the material of the insulating layer 308 and the insulating layer 309 includes an organic material (e.g., polyimide, polyethylene terephthalate, epoxy resin, etc.) or an inorganic material (e.g., silicon nitride, silicon oxide, etc.) or a combination of the above materials. In some embodiments, the insulating layer 308 and the insulating layer 309 have high transmittance and low dielectric loss (dissipation factor, Df). For example, the transmittance of the insulating layer 308 and the insulating layer 309 for light with a wavelength of 400nm to 800nm ​​is greater than or equal to 50%. In some embodiments, the dielectric constant (dielectric constant, Dk) of the insulating layer 308 and the insulating layer 309 is less than 4, and the dielectric loss is less than 0.004.

[0149] Wafer 410 is bonded to third redistribution layer 380 of redistribution structure BL. In some embodiments, wafer 410 is electrically connected to one or more of conductive features 382, ​​383, 384, 385, 387, 388, and 389. In some embodiments, wafer 410 is bonded to conductive features 382, ​​383, 384, 387, 388 through conductive connection structure 412.

[0150] Fig. 6A and Figure 6B 1 is a schematic cross-sectional view of an antenna device 1F along different cross-sections according to an embodiment of the present invention. Figure 6C yes Fig. 6A and Figure 6B A schematic top view of an antenna device 1F, wherein Figure 6C The wafer 410 , the conductive feature 382F, the conductive feature 384F, the conductive feature 374F, the ground electrode 142 , and the antenna electrode 120 are illustrated, and other elements are omitted. Fig. 6A and Figure 6B Along Figure 6C The section A-A' and the section B-B'. It must be noted here that FIG. 6A to FIG. 6C The implementation examples are used Figure 5A and Figure 5B The component numbers and partial contents of the embodiments are the same, wherein the same or similar numbers are used to represent the same or similar components, and the description of the same technical contents is omitted. The description of the omitted parts can be referred to the aforementioned embodiments, and will not be repeated here.

[0151] Please refer to FIG. 6A to FIG. 6C In this embodiment, the antenna unit 10F includes an antenna electrode 120, a circuit structure CSF, and a chip 410. In this embodiment, the antenna signal is not directly fed into the antenna electrode 120 through the substrate through hole. Instead, the antenna signal is coupled to the antenna electrode 120 in a radiation manner through the conductive feature 374F (i.e., the driving electrode). In some embodiments, the width of the chip 410 is smaller than the width of the ground electrode 142 and the width of the antenna electrode 120.

[0152] In the present embodiment, the redistribution structure BL includes a first redistribution layer 360 , an insulating layer 308 , a second redistribution layer 370 , an insulating layer 309 , and a third redistribution layer 380 which are formed in sequence.

[0153] In some embodiments, the conductive via passes through at least one of the insulating layer 309, the insulating layer 308, the active device layer AL and the buffer layer 301, and is used to electrically connect the first redistribution layer 360, the second redistribution layer 370 and / or the third redistribution layer 380 to other conductive layers.

[0154] The first redistribution layer 360 includes a conductive feature 366 and a conductive feature 367. In this embodiment, the conductive feature 366 and the conductive feature 367 can be referred to as a shielding electrode and a first ground signal line, respectively.

[0155] The conductive feature 366 shields the active device T to reduce interference of other signals on the active device T. The conductive feature 367 passes through the active device layer AL and the buffer layer 301 to be electrically connected to the ground electrode 142 .

[0156] The second redistribution layer 370 includes a conductive feature 372F, a conductive feature 374F, a conductive feature 376, a conductive feature 377F, a conductive feature 378, and a conductive feature 379E. In the present embodiment, the conductive feature 372F, the conductive feature 374F, the conductive feature 376, the conductive feature 377F, the conductive feature 378, and the conductive feature 379E can be respectively referred to as a second ground signal line, a driving electrode, a third ground signal line, a fourth ground signal line, a transmission line, and a signal line.

[0157] In this embodiment, the conductive feature 372F is electrically connected to the ground electrode 142 via a conductive via penetrating the insulating layer 308 , the active device layer AL, and the buffer layer 301 .

[0158] The conductive feature 374F (i.e., the driving electrode) extends on the top surface of the insulating layer 308 and overlaps the antenna electrode 120 and the opening 142h of the ground electrode 142. In this embodiment, each antenna unit 10F includes two conductive features 374F, and each ground electrode 142 includes two openings 142h. The two conductive features 374F overlap the two openings 142h, respectively. In some embodiments, the conductive feature 374F may overlap the opening 142h. Figure 5A as well as Figure 5B The conductive features 374E are shown to have the same shape, but the invention is not limited thereto.

[0159] Conductive feature 376 is electrically connected to conductive feature 366 .

[0160] Conductive feature 377F is electrically connected to conductive feature 367. In some embodiments, conductive feature 377F can be used as a shielding structure and partially surround the driving electrode, such as Figure 5B Conductive feature 372E.

[0161] The conductive feature 378 is electrically connected to the active device T. In some embodiments, the conductive feature 379E is electrically connected to the digital signal line 354 .

[0162] The third redistribution layer 380 includes a conductive feature 382F, a conductive feature 383, a conductive feature 384F, a conductive feature 386, a conductive feature 387F, a conductive feature 388F, and a conductive feature 389. In the present embodiment, the conductive feature 382F, the conductive feature 383, the conductive feature 384F, the conductive feature 386, the conductive feature 387F, the conductive feature 388F, and the conductive feature 389 may be respectively referred to as a first shielding structure, a radio frequency signal input line, an antenna signal line, a first pad, a second shielding structure, a second pad, and a third pad.

[0163] In some embodiments, conductive feature 382F partially surrounds conductive feature 384F on the top surface of insulating layer 309 and below wafer 410, similar to Figure 5B Conductive features 372 and conductive features 374 .

[0164] The conductive feature 384F (i.e., the antenna signal line) is electrically connected to the conductive feature 374F (i.e., the driving electrode). Specifically, the conductive feature 384F includes a contact portion 384F1 extending on the top surface of the insulating layer 309, a wire portion 384F2, a connecting portion 384F3, and a first conductive hole 384b located below the connecting portion 384F3. The contact portion 384F1, the wire portion 384F2, and the connecting portion 384F3 are connected in sequence. The contact portion 384F1 overlaps the chip 410. The wire portion 384F2 extends from the bottom of the chip 410 along the top surface of the insulating layer 309 in a direction away from the chip 410. The connecting portion 384F3 does not overlap the chip 410. The first conductive hole 384b passes through the insulating layer 309 and contacts the conductive feature 374F.

[0165] In some embodiments, the connection portion 384F3 is circular, and its radius D2e is 60 micrometers to 300 micrometers. The width of the connection portion 384F3 (i.e., twice the radius D2e) is greater than the width of the wire portion 384F2. In some embodiments, the aperture D4e of the first conductive hole 384b is 60 micrometers to 200 micrometers.

[0166] Conductive feature 387F (i.e., second shielding structure) is electrically connected to conductive feature 377F. Conductive feature 387F includes shielding portion 387a and one or more second conductive vias 387b located below shielding portion 387a. Shielding portion 387a extends on the top surface of insulating layer 309. In some embodiments, shielding portion 387a partially surrounds connecting portion 384F3 of conductive feature 384. Second conductive via 387b passes through insulating layer 309 and is electrically connected to conductive feature 377F.

[0167] In some embodiments, the shielding portion 387a is an open ring partially surrounding the connecting portion 384F3, wherein the radius D1e of the circular space inside the shielding portion 387a is 50 microns to 200 microns, and the width D3e of the solid portion of the shielding portion 387a is 100 microns to 400 microns.

[0168] In some embodiments, an angle θe between a line connecting the center of one second conductive via 387 b and the center of the first conductive via 384 b and a line connecting the center of another adjacent second conductive via 387 b and the center of the first conductive via 384 b is 30 degrees to 70 degrees.

[0169] The conductive feature 387F is electrically connected to the ground electrode 142 through the conductive feature 377F and the conductive feature 367 .

[0170] Wafer 410 is bonded to third redistribution layer 380 of redistribution structure BL. In some embodiments, wafer 410 is electrically connected to one or more of conductive feature 382F, conductive feature 383, conductive feature 384F, conductive feature 386, conductive feature 387F, conductive feature 388F, and conductive feature 389. In some embodiments, wafer 410 is bonded to conductive features 382F, 383, 384F, 386, 388F through conductive connection structure 412.

[0171] In summary, the antenna device of the present invention is provided with a light-transmitting area between the antenna units, so that the user can see the scene behind the antenna device through the antenna device. In addition, the design of the grounding electrode and the shielding structure can reduce the interference of external signals on the antenna signal.

[0172] Of course, the present invention may have many other embodiments. Without departing from the spirit and essence of the present invention, those skilled in the art may make various corresponding changes and modifications based on the present invention, but these corresponding changes and modifications should all fall within the scope of protection of the claims attached to the present invention.

Claims

1. An antenna device, characterized in that: include: A transparent substrate having a first surface and a second surface opposite to the first surface; as well as A plurality of antenna units are disposed on the transparent substrate, and a light-transmitting area is provided between adjacent antenna units, wherein each of the antenna units comprises: An antenna electrode is disposed on the first surface of the transparent substrate; a ground electrode disposed on the second surface of the transparent substrate, wherein a width of the ground electrode in a first direction is greater than a width of the antenna electrode in the first direction; a redistribution structure coupled to the antenna electrode, wherein the ground electrode is located between the redistribution structure and the transparent substrate; and A chip is bonded to the redistribution structure.

2. The antenna device according to claim 1, characterized in that Each of the antenna units further includes an active component layer, wherein the active component layer is located between the redistribution structure and the transparent substrate, and at least one active component in the active component layer overlaps the ground electrode.

3. The antenna device according to claim 1, wherein: Each of the antenna units further comprises: A substrate through hole is located in the transparent substrate, wherein the substrate through hole is connected to the antenna electrode, and the substrate through hole is electrically connected to the redistribution structure.

4. The antenna device according to claim 1, wherein: The rewiring structure includes: a shielding structure; and An antenna signal line, wherein the shielding structure completely or partially surrounds the antenna signal line on the top surface of an insulating layer.

5. The antenna device according to claim 4, characterized in that The antenna signal line includes: a connecting portion; and A conductor part is connected to the connecting part, and the width of the conductor part is smaller than the width of the connecting part.

6. The antenna device according to claim 5, characterized in that The antenna signal line further comprises: A first conductive hole is located below the connecting portion, wherein the conductive line portion extends from below the chip along the top surface of the insulating layer in a direction away from the chip, and the connecting portion does not overlap the chip.

7. The antenna device according to claim 6, characterized in that The shielding structure comprises: a shielding portion, wherein the shielding portion is a ring with an opening and partially surrounds the connecting portion of the antenna signal line on the top surface of the insulating layer, wherein the wire portion extends from the opening on the top surface of the insulating layer into the shielding portion; and A plurality of second conductive holes are located below the shielding portion and are electrically connected to the ground electrode.

8. The antenna device according to claim 7, characterized in that The second conductive holes are separated from each other laterally and arranged around the first conductive hole.

9. The antenna device according to claim 6, characterized in that: The rewiring structure includes: A driving electrode is electrically connected to the first conductive hole and coupled to the antenna electrode.

10. The antenna device according to claim 4, characterized in that The antenna signal line includes: a connecting portion overlapping the chip; and A first conductive hole is located below the connecting portion.

11. The antenna device according to claim 10, characterized in that The shielding structure comprises: a shielding portion on the top surface of the insulating layer, completely surrounding the connecting portion of the antenna signal line; and A plurality of second conductive holes are located below the shielding portion and electrically connected to the ground electrode, wherein the second conductive holes are laterally separated from each other and arranged around the first conductive hole.

12. The antenna device according to claim 1, wherein: The ground electrode has a mesh structure.

13. The antenna device according to claim 1, wherein: The antenna electrode has a mesh structure.

14. The antenna device according to claim 1, wherein: Also includes: A connecting line, wherein the ground electrodes of two adjacent ones of the antenna units are electrically connected to each other through the connecting line.

15. The antenna device according to claim 1, wherein: The width of the chip is smaller than the width of the ground electrode.

16. The antenna device according to claim 1, characterized in that The width of the chip is smaller than the width of the antenna electrode.

17. The antenna device according to claim 1, characterized in that: The rewiring structure includes: a shielding structure; and A driving electrode, wherein the driving electrode comprises: a contact portion; and An electrode portion is connected to the contact portion, wherein the width of the contact portion is greater than the width of the electrode portion, wherein the shielding structure is a ring with an opening, and the shielding structure partially surrounds the contact portion on the top surface of an insulating layer, wherein the electrode portion extends from the opening to outside the shielding structure on the top surface of the insulating layer.

Images