Method and apparatus for processing substrate

Abstract

Methods and apparatus for processing a substrate are provided herein. For example, a method includes processing a substrate in a process chamber in the presence of an electric field, then capturing an image of the substrate, determining whether a substrate arcing occurs based on an analysis of the captured image, and one of: continuing processing the substrate when it is determined that no arcing occurs, and continuing processing the substrate when it is determined that no arcing occurs. Or stopping processing the substrate when it is determined that the arc acts.

Description

Technical Field

[0001] Embodiments of the present disclosure relate generally to methods and apparatus for processing substrates and, for example, to methods and apparatus using real-time arcing detection. Background Art

[0002] Substrate-level (wafer) arcing can be a serious problem in high-volume production deposition. For example, once arcing occurs, there can be up to 100% yield reduction due to continued substrate-level arcing in the process chamber. Current methods for substrate-level arcing detection (e.g., voltage and arc count detection) can be somewhat limited because such methods are not very accurate and do not perform in real time (e.g., arcing is typically observed after one or more processes have been performed), which can result in substrate rejection (arcing to other substrates) and reduced yield.

[0003] Accordingly, the inventors describe herein improved methods and apparatus for real-time arcing of processed substrates. Summary of the invention

[0004] Methods and apparatus for processing substrates are provided herein. In some embodiments, a method for processing a substrate includes processing a substrate in a process chamber in the presence of an electric field, subsequently capturing an image of the substrate, determining whether substrate arcing occurs based on an analysis of the captured image, and one of: continuing to process the substrate when it is determined that there is no arcing, or stopping processing the substrate when it is determined that there is arcing.

[0005] According to at least some embodiments, a non-transitory computer-readable storage medium has instructions stored thereon that, when executed by a processor, perform a method for processing a substrate, including: processing a substrate in a process chamber in the presence of an electric field, subsequently capturing an image of the substrate, determining whether substrate arcing occurs based on an analysis of the captured image, and one of: continuing to process the substrate when it is determined that no arcing occurs, or stopping processing the substrate when it is determined that arcing occurs.

[0006] Other and further embodiments of the disclosure are described below. BRIEF DESCRIPTION OF THE DRAWINGS

[0007] Embodiments of the present disclosure, briefly summarized above and discussed in more detail below, may be understood by reference to the illustrative embodiments of the disclosure depicted in the accompanying drawings. However, the drawings depict only typical embodiments of the disclosure and are therefore not to be considered limiting in scope, as the disclosure may admit to other equally effective embodiments.

[0008] Figure 1 is a flow chart of a method for processing a substrate according to at least some embodiments of the present disclosure.

[0009] Figure 2 For performing at least some embodiments of the present disclosure Figure 1 Schematic diagram of the apparatus of the method.

[0010] To facilitate understanding, identical reference numerals have been used, where possible, to designate identical elements common to the drawings. The drawings are not drawn to scale and may be simplified for clarity. Elements and features of one embodiment may be beneficially incorporated into other embodiments without further description. DETAILED DESCRIPTION

[0011] Embodiments of methods and apparatus for processing substrates are provided herein. For example, the methods and apparatus described herein use real-time arcing detection. In at least some embodiments, a method for processing a substrate may include processing a substrate in the presence of an electric field, subsequently capturing an image of the substrate, determining whether substrate arcing has occurred based on an analysis of the captured image, and continuing to process the substrate when it is determined that there is no arcing, or stopping processing the substrate when it is determined that there is arcing. Compared to conventional methods and apparatus, the methods and apparatus described herein can reduce, if not eliminate, substrate scrap (waste), for example, preventing other substrates from being processed in a compromised (problematic) chamber, and can increase throughput.

[0012] According to at least some embodiments of the present disclosure, Figure 1 is a flow chart of a method 100 for processing a substrate, and Figure 2The tool 200 (or apparatus) may be used to perform the method 100. The methods and apparatus described herein use one or more cameras or sensors positioned (mounted) near a slit valve (and / or one or more modules) of a process chamber / platform (e.g., an integrated tool) that allows, for example, real-time arc detection once substrate arcing occurs in a particular process chamber. Similarly, the camera or sensor may also be mounted above one or more process chambers having a transparent cover, thereby allowing the entire substrate to be viewed from outside the process chamber and above the process chamber cover. In at least some embodiments, after the substrate is processed in one or more process chambers of the tool 200 and transferred to another process chamber via a slit valve (and / or one or more modules) for further processing, the one or more cameras or sensors are configured to provide an image (or photograph) of the substrate to a processor of the tool 200. The processor compares this image to a baseline (or look-up table) (e.g., using a control algorithm, artificial intelligence, etc.), which may include one or more substrate arcing patterns. If the processor determines that the image matches the one or more substrate arcing patterns, the processor may provide an indication of a fault and may immediately stop the processing sequence. Alternatively or additionally, if the processor determines that the image does not match the one or more substrate arcing patterns, the processor may continue to process the substrate according to the recipe.

[0013] The method 100 may be performed in a tool 200, which may include any suitable process chamber configured for one or more of: physical vapor deposition (PVD), chemical vapor deposition (CVD), and / or atomic layer deposition (ALD), such as plasma enhanced ALD or thermal ALD (e.g., without plasma formation). Examples of processing systems that may be used to perform the inventive methods disclosed herein may include, but are not limited to, one or more process chambers commercially available from Applied Materials, Inc. of Santa Clara, California, USA. Other process chambers, including process chambers from other manufacturers, may also be used as appropriate in conjunction with the teachings provided herein.

[0014] The tool 200 may be implemented with individual process chambers that may be configured independently or as a cluster tool (e.g., as described below with respect to Figure 2The invention may be provided as a portion of an integrated tool (tool 200) described herein. Examples of integrated tools may include, but are not limited to, one or more process chambers commercially available from Applied Materials, Inc. in Santa Clara, California, USA. The methods described herein may be practiced using other cluster tools having suitable process chambers coupled thereto, or in other suitable process chambers. For example, in some embodiments, the inventive methods described above may be performed in an integrated tool such that there are limited or no vacuum breaks between processing steps. For example, reducing vacuum breaks may limit or prevent contamination (e.g., oxidation) of one or more metal layers or other portions of the substrate.

[0015] The integrated tool includes a vacuum sealed processing platform (processing platform 201), a factory interface 204, and a controller 202. The processing platform 201 includes a plurality of process chambers, such as process chambers 214A, 214B, 214C, and 214D operatively coupled to a transfer chamber 203 (vacuum substrate transfer chamber), and process chambers 214E and 214F operatively coupled to a buffer chamber 208 (vacuum substrate buffer chamber).

[0016] The factory interface 204 is accessed through one or more load lock chambers ( Figure 2 The two load lock chambers shown, such as 206A and 206B, are operatively coupled to the buffer chamber 208. In at least some embodiments, one of the buffer chamber 208 or the transfer chamber 203 of the tool 200 may be omitted. One or more modules or channels may be disposed between the buffer chamber 208 and the transfer chamber 203 and may be configured to receive one or more substrates from the buffer chamber 208 and / or the transfer chamber 203. In at least some embodiments, the module 218A and the module 218B are disposed between the buffer chamber 208 and the transfer chamber 203 and are configured to receive one or more substrates from the buffer chamber 208 and / or the transfer chamber 203 during operation, as will be described in more detail below. As described above, the module 218A and the module 218B may have a transparent cover.

[0017] In some embodiments, the factory interface 204 includes a docking station 207 and a factory interface robot 238 to facilitate the transfer of one or more semiconductor substrates (wafers). The docking station 207 is configured to receive one or more front opening unified pods (FOUPs). Figure 2In the embodiment of FIG. 2 , four FOUPs are shown, such as 205A, 205B, 205C, and 205D. The factory interface robot 238 is configured to transfer substrates from the factory interface 204 to the processing platform 201 through the load lock chambers, such as 206A and 206B. Each of the load lock chambers 206A and 206B has a first port coupled to the factory interface 204 and a second port coupled to the transfer chamber 203. The load lock chambers 206A and 206B are coupled to a pressure control system (not shown) that pumps and exhausts the load lock chambers 206A and 206B to facilitate the transfer of substrates between the vacuum environment of the buffer chamber 208 and the substantially ambient (e.g., atmospheric) environment of the factory interface 204. In at least some embodiments, the buffer chamber 208 can be maintained at a substantially ambient environment. In an embodiment where the buffer chamber 208 is not used, the load lock chambers 206A and 206B facilitate the transfer of substrates between the transfer chamber 203 and the factory interface 204. The buffer chamber 208 and the transfer chamber 203 each have a vacuum robot 242 positioned to transfer / receive one or more substrates. For example, the vacuum robot 242 of the buffer chamber 208 can receive / transfer substrates 221 between the load lock chambers 206A and 206B, the process chambers 214E and 214F, and the modules 218A and 218F. Similarly, the vacuum robot 242 of the transfer chamber 203 can receive / transfer substrates 221 between the process chambers 214A, 214B, 214C, and 214D and the modules 218A and 218F.

[0018] In some embodiments, the process chambers 214A, 214B, 214C, 214D, 214E, and 214F may include at least one ALD chamber, CVD chamber, PVD chamber, electron beam deposition chamber, and / or electroplating, electroless plating (EEP) deposition chamber. Likewise, in some embodiments, one or more optional service chambers (shown as 216A and 216B) may be coupled to the buffer chamber 208. The service chambers 216A and 216B may be configured to perform other substrate processes such as degassing, bonding, chemical mechanical polishing (CMP), substrate cleaning (pre-cleaning), wafer cutting, etching, plasma cutting, orientation, substrate metrology, cooling, etc.

[0019] In at least some embodiments, one or more devices 213 may be mounted adjacent to the process chambers 214A, 214B, 214C, 214D, 214E, and 214F, the service chambers 216A and 216B, the modules 218A and 218F, and / or the load lock chambers 206A and 206B using one or more suitable mounting devices (e.g., nuts, bolt adhesives, cements, etc.). For example, the one or more devices 213 may be cameras, sensors (e.g., charge coupled devices), or other suitable devices capable of capturing images or photographs, as described in more detail below. In addition, the one or more devices 213 may be mounted adjacent to an opening to any of the process chambers 214A, 214B, 214C, 214D, 214E, and 214F, the service chambers 216A and 216B, the modules 218A and 218F, and / or the load lock chambers 206A and 206B. For example, in at least some embodiments, the one or more devices 213 can be mounted adjacent to a slit valve (not shown) that opens to process chambers 214A, 214B, 214C, 214D, 214E, and 214F, service chambers 216A and 216B, modules 218A and 218F, and / or load lock chambers 206A and 206B.

[0020] The controller 202 controls the operation of the tool 200 using direct control of the process chambers 214A, 214B, 214C, 214D, 214E, and 214F and the device 212, or alternatively, by controlling a computer (or controller) associated with the process chambers 214A, 214B, 214C, 214D, 214E, and 214F, the device 212, and the tool 200. In operation, the controller 202 is capable of collecting data and obtaining feedback from the corresponding chambers and systems to optimize the performance of the tool 200. The controller 202 generally includes a central processing unit 230, a memory 234, and support circuits 232. The central processing unit 230 can be any form of general-purpose computer processor that can be used in an industrial environment. The support circuits 232 are conventionally coupled to the central processing unit 230 and can include caches, clock circuits, input / output subsystems, power supplies, etc. Software routines such as the processing methods described above may be stored in memory 234 (e.g., a non-transitory computer-readable storage medium) and, when executed by central processing unit 230, convert central processing unit 230 into a special-purpose computer (e.g., controller 202). The software routines may also be stored and / or executed by a second controller (not shown) located remotely from tool 200.

[0021] Continue to refer to Figure 1 Initially, one or more substrates, thermal module assemblies, etc. may be loaded into four FOUPs (such as 205A, 205B, 205C, and 205D ( Figure 2 )). For example, in at least some embodiments, a substrate 221 (wafer) may be loaded into a FOUP 205B. The substrate 300 may have a diameter of 150 mm, 200 mm, 300 mm, etc. The substrate 221 may be formed of germanium, silicon, silicon carbide, silicon oxide, etc. In at least some embodiments, the substrate 221 may have a diameter of 300 mm and may be formed of silicon. In at least some embodiments, one or more metal layers may be deposited on the substrate 221. For example, the one or more metal layers may include aluminum, cobalt, copper, nitride, titanium, tantalum, etc. In at least some embodiments, the substrate 221 may include a metal layer, and the metal layer includes cobalt and tungsten.

[0022] Once loaded, the factory interface robot 238 may transfer the substrate 221 from the factory interface 204 to the processing platform 201 through, for example, the load lock chamber 206A. The vacuum robot 242 may transfer the substrate 221 from the load lock chamber 206A to or from one or more of the process chambers 214A, 214B, 214C, 214D, 214E, and 214F and / or the service chambers 216A and 216B.

[0023] For example, in at least some embodiments, the vacuum robot 242 can transfer the substrate 221 from the load lock chamber 206A to the service chamber 216A, where one or more of degassing, bonding, chemical mechanical polishing (CMP), substrate cleaning (pre-cleaning), wafer cutting, etching, plasma cutting, orientation, substrate metrology, cooling can be performed. For example, in at least some embodiments, a pre-cleaning process can be performed on the substrate 221 to remove oxides that may have formed on the metal layer. In at least some embodiments, before or after processing the substrate 221 in the service chamber 216A, one or more devices 213 can be used to capture an image (photograph) of the substrate 221, as will be described in more detail below.

[0024] Next, the vacuum robot 242 of the buffer chamber 208 may transfer the substrate 221 from the service chamber 216A to one of the modules 218A and 218B (e.g., for cooling). Again, the one or more devices 213 may be used to capture images (photographs) of the substrate 221 before or after transferring the substrate 221 to the modules 218A and 218B, as will be described in detail below.

[0025] Next, at 102, the method 100 includes: processing the substrate in the presence of an electric field in a process chamber. For example, the vacuum robot 242 of the transfer chamber 203 can transfer the substrate 221 from one of the modules 218A and 218B to one of the process chambers 214A, 214B, 214C, and 214D, where one or more deposition processes can be performed on the substrate 221. In at least some embodiments, the substrate 221 can be transferred to the process chamber 214A, where physical vapor deposition can be performed on the substrate 221. For example, during the physical vapor deposition, one or more additional metal layers (e.g., relatively thick, highly uniform, low temperature films including at least one of aluminum nitride, aluminum oxide, gallium arsenide, germanium, indium tin oxide, lead zirconium titanate, scandium-doped aluminum nitride, silicon carbide, etc.) can be deposited on the metal layer previously deposited on the substrate 221. Additional metal layers may be used for one or more MTM (More than Moore) applications such as power devices, MEMS, RF, photonics, and packaging technologies, eg, TSV.

[0026] Next, at 104, the method 100 includes subsequently capturing an image of the substrate. For example, as described above, one or more devices may be used to capture an image of the substrate 221. For example, the one or more devices 213 may capture an image of the substrate 221 after the deposition process. For example, as described above, given the electric field present during the deposition process (e.g., physical vapor deposition or chemical vapor deposition), arcing may occur during physical vapor deposition. Therefore, after the deposition process, under the control of the controller 202, the one or more devices 213 may capture an image of the top surface of the substrate (e.g., the deposited additional metal layer). The captured image may be transmitted to the controller 202 via wired or wireless communication and stored in the memory 234.

[0027] Next, at 106, the method 100 includes determining whether substrate arcing occurs based on the analysis of the captured image. For example, in at least some embodiments, the controller 202 may compare the captured image (image processing) with a stored substrate. For example, the controller 202 may compare the captured image with at least one of a baseline (model, such as shape data) or a lookup table. For example, the baseline may include a corresponding image (arcing wafer pattern) of a maximum (predetermined) amount of acceptable arcing stored in the memory 234. For example, the arcing wafer pattern may include shape data on a surface (e.g., along or adjacent to the periphery of the substrate, or adjacent to the center of the substrate, or any other area of ​​the substrate). Therefore, the controller 202 may compare the captured image with the baseline to determine whether the occurrence of arcing equals or exceeds the maximum (predetermined) amount of acceptable arcing. Similarly, the controller 202 may compare the captured image with the images (plurality of arcing wafer patterns) stored in the memory 234 to determine whether the occurrence of arcing equals or exceeds the maximum (predetermined) amount of acceptable arcing.

[0028] Next, at 108, the method 100 includes one of continuing to process the substrate when it is determined that there is no arcing, or stopping processing the substrate when it is determined that there is an arcing. For example, if the controller 202 determines that the captured image substantially matches (is equal to) the stored image of the baseline and / or the stored image in the lookup table, the controller 202 may continue processing the substrate 221 using one or more of the process chambers 214A, 214B, 214C, 214D, 214E, and 214F and / or the service chambers 216A and 216B. Conversely, if the controller 202 determines that the captured image substantially matches (is equal to) the stored image of the baseline and / or the stored image in the lookup table, the controller 202 may stop processing the substrate 221. In addition, the method 100 may include triggering a fault indication when an arcing is determined. In at least some embodiments, the controller 202 may trigger a fault indication (e.g., an alarm, a visual warning, etc.) and transmit the fault indication to a user.

[0029] The method 100 including operations 102 to 108 may be repeated for each of the process chambers 214A, 214B, 214C, 214D, 214E, and 214F and / or the service chambers 216A and 216B. The method 100 including operations 102 to 108 may also be used in a similar manner in conjunction with the modules 218A and 218F and / or the load lock chambers 206A and 206B, for example, for metrology.

[0030] While the foregoing is directed to embodiments of the present disclosure, other and further embodiments of the disclosure may be devised without departing from the basic scope thereof.

Claims

1. A method for processing a substrate, comprising: processing a substrate in the presence of an electric field in a process chamber; then capturing an image of the substrate; determining whether substrate arcing occurs based on an analysis of the captured image; as well as One of the following: When it is determined that there is no arcing, continuing to process the substrate; or When the arcing is determined, processing of the substrate is stopped. 2 . The method of claim 1 , wherein capturing the image of the substrate is performed at at least one of a module disposed adjacent to a transfer chamber or a slit valve of a deposition chamber configured for processing the substrate. 3 . The method of claim 1 , wherein capturing the image of the substrate is performed using at least one of a camera or a sensor. 4 . The method of claim 1 , wherein processing the substrate comprises a deposition process, the deposition process being at least one of a physical vapor deposition process or a chemical vapor deposition process.

5. The method of claim 1 , wherein determining whether substrate arcing occurs comprises: The captured image is compared to a baseline or lookup table of substrate arc patterns.

6. The method of claim 1, further comprising: When an arc is detected, a fault indication is triggered.

7. The method of any one of claims 1 to 6, wherein the substrate is made of at least one of aluminum, copper or tantalum.

8. A non-transitory computer readable storage medium having instructions stored thereon, which, when executed by a processor, perform a method for processing a substrate, the method comprising: processing a substrate in the presence of an electric field in a process chamber; then capturing an image of the substrate; determining whether substrate arcing occurs based on an analysis of the captured image; as well as One of the following: When it is determined that there is no arcing, continuing to process the substrate; or When the arcing is determined, processing of the substrate is stopped.

9. The non-transitory computer readable storage medium of claim 8, wherein capturing the image of the substrate is performed at at least one of a module disposed adjacent to a transfer chamber or a slit valve of a deposition chamber configured for processing the substrate.

10. The non-transitory computer readable storage medium of claim 8, wherein capturing the image of the substrate is performed using at least one of a camera or a sensor.

11. The non-transitory computer readable storage medium of claim 8, wherein processing the substrate comprises a deposition process, the deposition process being at least one of a physical vapor deposition process or a chemical vapor deposition process.

12. The non-transitory computer readable storage medium of claim 8, wherein determining whether substrate arcing occurs comprises: The captured image is compared to a baseline or lookup table of substrate arc patterns.

13. The non-transitory computer-readable storage medium of claim 8, further comprising: When an arc is detected, a fault indication is triggered.

14. The non-transitory computer readable storage medium of any one of claims 8 to 13, wherein the substrate is made of at least one of aluminum, copper, or tantalum.

15. An apparatus for processing a substrate, comprising: a process chamber configured to process a substrate in the presence of an electric field; means for capturing an image of said substrate; as well as A controller configured to: determining whether substrate arcing occurs based on an analysis of the captured image; as well as One of the following: When it is determined that there is no arcing, continuing to process the substrate; or When the arcing is determined, processing of the substrate is stopped. 16 . The apparatus of claim 15 , wherein the image of the substrate is captured at at least one of a module disposed adjacent to a transfer chamber or a slit valve of a deposition chamber of the apparatus.

17. The apparatus of claim 15, wherein the means for capturing the image of the substrate is at least one of a camera or a sensor.

18. The apparatus of claim 15, wherein the process chamber is at least one of a physical vapor deposition process or a chemical vapor deposition process.

19. The apparatus of claim 15, wherein the controller is configured to compare the captured image to a baseline or lookup table of substrate arc patterns.

20. The apparatus of any one of claims 15 to 19, wherein the controller is further configured to trigger a fault indication when arcing is detected.

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