Semiconductor light-emitting device and method for manufacturing semiconductor light-emitting device

Abstract

Provided is a semiconductor light-emitting device in which light emission efficiency is high, the reflectance of a lead frame is not easily reduced by corrosion, and light output is maintained. An insulating connecting member (13) that bonds the bottom surface of the light-emitting element (12) and the upper surface of the first electrode (11a) has light reflectivity, extends to a region outside of the rectangular outer shape of the light-emitting element (12), and covers a part of a region outside of the light-emitting element (12) on the surface of the first electrode (11a).

Description

Technical Field

[0001] The present invention relates to a semiconductor light emitting device having a structure in which a semiconductor light emitting element is fixed to a lead frame by an adhesive component and the surroundings are sealed with a resin. Background Art

[0002] A semiconductor light emitting device having a structure in which a semiconductor light emitting element is fixed to a lead frame by an adhesive component is known. For example, in Patent Documents 1 and 2, a semiconductor light emitting element is fixed to a lead frame by an adhesive component, and a frame body of a light-reflective thermosetting resin formed by transfer molding is mounted at a predetermined distance from the semiconductor light emitting element. A semiconductor light emitting device having a structure in which a transparent resin containing a fluorescent substance is filled between the semiconductor light emitting element and the frame body is disclosed.

[0003] In a semiconductor light emitting device of this structure, part of the light emitted from the semiconductor light emitting element is reflected by the frame, and the other part is reflected by the surface of the lead frame and emitted upward. Therefore, in order to improve the emission efficiency from above, it is disclosed to apply metal plating such as silver and aluminum on the surface of the lead frame to improve the reflection efficiency.

[0004] Prior art literature

[0005] Patent Literature

[0006] Patent Document 1: Japanese Patent Application Publication No. 2010-62272

[0007] Patent Document 2: Japanese Patent Application Publication No. 2006-156704 Summary of the invention

[0008] Problems to be solved by the invention

[0009] The lead frame plated with silver and aluminum is sometimes corroded by oxygen, moisture, nitrogen oxides, sulfur oxides, etc. in the atmosphere, and the reflectivity of the lead frame surface is reduced, and the light output of the light-emitting device is reduced. Therefore, by applying gold plating with corrosion resistance, the reduction of light reflectivity caused by corrosion of the lead frame can be prevented, but the reflectivity of blue light of the gold-plated lead frame is low, so the light output of the light-emitting device is reduced.

[0010] An object of the present invention is to provide a semiconductor light-emitting device that can maintain light output even if the lead frame is plated with gold to prevent corrosion, and is not easily affected by a reduction in reflectivity caused by corrosion even if the surface of the lead frame is not plated with gold to prevent corrosion.

[0011] Means for solving problems

[0012] In order to achieve the above-mentioned object, the semiconductor light-emitting device of the present invention comprises: a resin molded body having a concave portion; a pair of electrodes arranged in the resin molded body and composed of a lead frame whose surface is partially exposed at the bottom of the concave portion; a light-emitting element mounted on a first electrode of the pair of electrodes; and an insulating connecting component that bonds the bottom surface of the light-emitting element to the upper surface of the first electrode. The connecting component has light reflectivity. The connecting component extends to an area outside the rectangular shape of the light-emitting element, covering a part of the surface of the first electrode outside the light-emitting element.

[0013] Effects of the Invention

[0014] According to the present invention, a semiconductor light-emitting device can be provided, in which a portion of light emitted from the side of the light-emitting element is reflected by a light-reflective connecting component extending to the outside of the light-emitting element. Therefore, even if the lead frame is plated with gold to prevent corrosion, the light output can be maintained. In addition, even if the gold-plated structure is not implemented to prevent corrosion, it is not easily affected by the reduction in reflectivity caused by corrosion on the lead frame surface, and the light output can be maintained. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] Figure 1 (a), (b), (c) and (d) are respectively a top view, a side view of a long side, a side view of a short side and a rear view of the semiconductor light emitting device of embodiment 1, and (e) is a cross-sectional view.

[0016] Figure 2 (a) is a top view of an example of a light emitting element of the semiconductor light emitting device of Embodiment 1, and (b) is a cross-sectional view.

[0017] Figure 3 (a) and (b) are diagrams showing the directivity of the light emitting element of the semiconductor light emitting device according to Embodiment 1.

[0018] Figure 4 (a) and (b) are a top view and a cross-sectional view of a part of the semiconductor light emitting device according to Embodiment 1, respectively.

[0019] Figure 5 (a) is a top view of a lead frame of the semiconductor light emitting device according to Embodiment 1, and (b) to (d) are cross-sectional views of the lead frame.

[0020] Figure 6 This is a flowchart showing the manufacturing process of the semiconductor light emitting device 1 according to the first embodiment.

[0021] Figure 7 It is a plan view showing the manufacturing process of the semiconductor light emitting device 1 according to the first embodiment.

[0022] Figure 8It is a plan view showing the manufacturing process of the semiconductor light emitting device 1 according to the first embodiment.

[0023] Fig. 9 It is a plan view showing the manufacturing process of the semiconductor light emitting device 1 according to the first embodiment.

[0024] Fig.10 It is a plan view showing the manufacturing process of the semiconductor light emitting device 1 according to the first embodiment.

[0025] Fig.11 It is a plan view showing the manufacturing process of the semiconductor light emitting device 1 according to the first embodiment.

[0026] Fig.12 (a) to (c) and (e) are cross-sectional views showing the manufacturing process of the semiconductor light emitting device 1 according to the first embodiment, and (d) is a plan view.

[0027] Fig.13 It is a plan view showing the manufacturing process of the semiconductor light emitting device 1 according to the first embodiment.

[0028] Fig.14 It is a plan view showing the manufacturing process of the semiconductor light emitting device 1 according to the first embodiment.

[0029] Fig.15 It is a plan view showing the manufacturing process of the semiconductor light emitting device 1 according to the first embodiment.

[0030] Fig.16 This is a table showing the light outputs of the semiconductor light emitting devices of Embodiment 1 and Comparative Example 1. DETAILED DESCRIPTION

[0031] A semiconductor light emitting device according to one embodiment of the present invention is described below.

[0032] (Implementation Method 1)

[0033] use Figure 1 to Figure 5 The structure of the semiconductor light emitting device 1 according to the first embodiment will be described. Figure 1 (a), (b), (c) and (d) are respectively a top view, a side view of a long side, a side view of a short side and a rear view of the semiconductor light emitting device 1, Figure 1 (e) is a cross-sectional view. Figure 2 (a) is a top view of an example of a light emitting element, Figure 2 (b) is a cross-sectional view. Figure 3 (a) and (b) are diagrams showing the directivity of the light emitting element. Figure 4 (a) and (b) are a top view and a cross-sectional view of a portion of the semiconductor light emitting device 1 , and also illustrate the optical path. Figure 5 (a) to (d) are the top view and cross-sectional view of the lead frame. Figure 1 , Figure 2 , Figure 4 , Figure 5 In the top view, hatching is also performed to facilitate understanding of the structure.

[0034] like Figure 1 As shown, the semiconductor light emitting device 1 of the first embodiment includes: a frame 10 as a resin molded body; a pair of electrodes 11 a and 11 b constituted by a lead frame; a light emitting element 12 ; an insulating adhesive member 13 ; and a sealing member 15 .

[0035] The frame 10 has a recess in the center. A pair of electrodes 11a and 11b are arranged in the frame 10, and a part of the surface is exposed from the bottom of the recess. The frame 10 covers a part of the back side of the electrodes 11a and 11b, and also fills between the electrodes 11a and 11b to insulate the two. The outer shape of the frame 10 observed from the top surface is rectangular, and the four outer side surfaces of the frame 10 are perpendicular to the main planes of the electrodes 11a and 11b. On the outer side surfaces of the long sides of the frame 10, the end faces of the first electrode 11a and the second electrode 11b are located on the same plane as the outer side surfaces of the frame 10.

[0036] The first electrode 11a of the pair of electrodes 11a and 11b is a cathode, and the second electrode 11b is an anode. The surfaces of the pair of electrodes 11a and 11b are plated with gold (Au), which is corrosion-resistant and has a high reflectivity for light with a wavelength longer than blue.

[0037] The light emitting element 12 is, for example, a semiconductor light emitting element that emits blue light having a main wavelength of 440 nm to 460 nm, and is mounted on the first electrode 11 a of the pair of electrodes 11 a and 11 b exposed at the bottom of the recess.

[0038] The adhesive member 13 has reflectivity for reflecting light in the visible light band, and is disposed between the bottom surface of the light emitting element 12 and the upper surface of the first electrode 11a to bond the two. Furthermore, the adhesive member 13 has a shape extending from between the bottom surface of the light emitting element 12 and the upper surface of the first electrode 11a to an area outside the rectangular outer shape of the light emitting element 12. Thus, the adhesive member 13 extending in the area outside the light emitting element 12 covers a portion of the surface of the first electrode 11a outside the light emitting element 12.

[0039] The upper surface of the light-emitting element 12 is provided with an n-side electrode pad (cathode) 21a and a p-side electrode pad (anode) 21b as element electrodes. One end of the first bonding wire 14a is connected to the n-side electrode pad 21a. The other end of the first bonding wire 14a is connected to the area of ​​the upper surface of the first electrode 11a that is not covered by the adhesive component 13. In addition, one end of the second bonding wire 14b is connected to the p-side electrode pad 21b. The other end of the second bonding wire 14b is connected to the upper surface of the second electrode 11b. Thus, a driving current is supplied to the light-emitting element 12 from the first electrode 11a and the second electrode 11b via the first bonding wire 14a and the second bonding wire 14b.

[0040] The sealing member 15 is filled in the recess of the frame body 10 so that the light emitting element 12 and the first bonding wire 14 a and the second bonding wire 14 b are embedded in the sealing member 15 .

[0041] The sealing member 15 is a member in which a light conversion member is dispersed in a resin that is transparent to the light emitted by the light emitting element 12. The light conversion member absorbs a portion of the light emitted from the light emitting element 12 and emits light of a longer wavelength than the absorbed light, and is, for example, a phosphor that emits yellow light, which is the complementary color of the blue light emitted by the light emitting element 12. In addition, the portion (upper surface) of the sealing member 15 exposed from the recessed portion of the frame 10 is the light emitting surface FO of the light emitting device 1.

[0042] (Function of each part during light emission)

[0043] When a driving current is supplied to the light emitting element 12 from the first electrode 11a and the second electrode 11b via the first bonding wire 14a and the second bonding wire 14b, the light emitting element 12 emits main light from the upper surface and secondary light from the side surface (see Figure 3 ).

[0044] like Figure 3 As shown in (a), the main light is emitted upward from the upper surface of the light-emitting element 12. The secondary light is emitted from the four side surfaces of the light-emitting element 12. The secondary light is light (secondary light) guided in the in-plane direction within the growth substrate of the light-emitting element 12, and has a high intensity in the axial direction passing through the center of each side of the light-emitting element 12 and orthogonal to the side surface.

[0045] like Figure 4 As shown in (b), the main light (E1, E3) is emitted upward from the light emitting element 12, a part (E1) is emitted directly upward through the sealing component 15, and the other part (E3) is irradiated to the wavelength conversion component, the wavelength is converted by the wavelength conversion component, and is emitted upward through the sealing component 15.

[0046] On the other hand, Figure 4As shown in (b), among the secondary lights (E2, E4), the secondary light E2 emitted obliquely downward from the side of the light emitting element 12 is reflected upward by the surface of the adhesive component 13 of the light emitting element 12. On the way upward, a part of the secondary light E2 is converted in wavelength by the wavelength conversion component, and another part of the secondary light E2 is further reflected by the frame 10 and directed upward.

[0047] Since the secondary light E4 is emitted from the light emitting element 12 obliquely upward, it does not reach the adhesive member 13 , but passes through the sealing member 15 , partially has its wavelength converted by the wavelength conversion member, and then travels upward directly or is reflected by the housing 10 .

[0048] The phosphor particles excited by the light emitted from the light emitting element 12 emit yellow light in all directions of the phosphor. At this time, the light P3 emitted upward is emitted from the light emitting surface FO of the light emitting device 1, while the light P4 (yellow light) emitted downward is reflected by the surfaces of the adhesive member 13 and the first electrode 11a and the second electrode 11b, and is emitted from the light emitting surface FO of the light emitting device 1.

[0049] Furthermore, according to the above description, even when the sealing member 15 does not include a wavelength conversion member and the wavelength conversion member converts all the light emitted from the light emitting element 12 , the effect can be expected.

[0050] Thus, in the semiconductor light-emitting device 1 of the present embodiment 1, the secondary light emitted from the side of the light-emitting element 12 and emitted obliquely downward is reflected by the adhesive component 13, and is therefore not affected by the reflection characteristics of the first electrode 11a and the second electrode 11b that are subjected to corrosion-resistant metal plating (here, gold plating), thereby being able to improve the light output of the semiconductor light-emitting device 1.

[0051] Furthermore, by setting the light (fluorescence) emitted from the light conversion member dispersed in the sealing member 15 to a wavelength having a high reflectivity in the reflection characteristics of the corrosion-resistant metal plating, the light output of the semiconductor light-emitting device 1 can be increased.

[0052] (Shape and material of bonding parts)

[0053] Hereinafter, the shape and the like of the adhesive member 13 for improving the reflection efficiency of the secondary light will be described in detail.

[0054] The adhesive member 13 is not only arranged under the light emitting element 12 to bond the light emitting element 12 to the upper surface of the first electrode 11 a , but also extends to the outside of the rectangular outer shape of the light emitting element 12 to reflect the secondary light emitted from the side surface of the light emitting element 12 .

[0055] like Figure 1As shown in (a), the shape of the periphery of the adhesive member 13 is a rounded rectangle, which is larger than the light emitting element 12. When the adhesive member 13 is viewed from above, the periphery of the adhesive member 13 is fan-shaped (a shape in which the corners of an isosceles triangle are rounded) or parabolic with one side of the light emitting element 12 as the base.

[0056] In other words, the positions of the center O of the adhesive member 13 and the light emitting element 12 coincide, and the positions of the corners of the adhesive member 13 are offset by 45 degrees from the positions of the corners of the light emitting element 12. In addition, the shape of the periphery of the adhesive member 13 may not be a perfect rectangle with rounded corners, and the sides of the rectangle may draw a gentle curve and bulge outward.

[0057] That is, the distance from one side of the rectangular outer shape of the light emitting element 12 to the periphery of the adhesive member is largest at the center of one side of the light emitting element 12 and becomes smaller toward both ends of the one side.

[0058] Furthermore, a predetermined range of the periphery of the adhesive member 13 is in a curved shape, and the predetermined range includes a position at the maximum distance from one side of the light emitting element 12 , constituting a rounded corner portion of the adhesive member 13 .

[0059] In other words, the periphery of the adhesive member 13 extends outwardly at the center of the four sides of the light emitting element 12 and is closest to the light emitting element 12 at the corners of the light emitting element 12 .

[0060] By setting the shape of the adhesive member 13 to the above-mentioned shape, the light emitting element 12 can be efficiently reflected. Figure 3 In addition, a bonding space BS not covered by the adhesive member 13 for connecting the bonding wires 14a and 14b to the first electrode 11a and the second electrode 11b can be ensured in the first electrode 11a and the second electrode 11b.

[0061] Furthermore, the entire area of ​​the adhesive member 13 is preferably at least twice the area of ​​the bottom surface of the light emitting element 12 .

[0062] Specifically, when the distance from the center O of the light emitting element 12 to the side is set to L1 (= 1 / 2 of the length of one side), and the distance from the center O to the corner of the adhesive member 13 (the intersection point X of the imaginary extension lines of the adjacent sides of the adhesive member 13) is set to L2, the adhesive member 13 preferably satisfies (2·(2L1) 2 ≤(√2·2L) 2 ) In addition, the upper limit is the area in which the joining space BS does not disappear or less than 3 times.

[0063] In addition, when the adhesive member 13 and the light emitting element 12 are viewed from above, the outline of the light emitting element 12 is preferably located inside the periphery of the adhesive member 13. It is particularly preferred that the periphery of the adhesive member 13 is located outside the corner of the light emitting element 12 by a width W that is 0.1 times or more of the length of one side of the light emitting element 12 (0.1·2L≤W).

[0064] Therefore, if Figure 4 As shown in (a), the distance L3 (the distance between the center O and the intersection X) from the light emitting element 12 to the periphery of the adhesive component 13 in the central part of one side of the light emitting element 12 is preferably equal to or greater than the distance L1 (= 1 / 2 of the length of one side) from the center O of the light emitting element 12 to the side.

[0065] In addition, the area (bottom portion) of the adhesive component 13 located below the light-emitting element 12 has a thickness that allows the light-emitting element 12 to be bonded to the first electrode 11a with a specified strength, and has a thickness that allows the light emitted from the lower surface of the light-emitting element 12 to be reflected and made to enter the light-emitting element 12 again.

[0066] like Figure 4 As shown in (b), the cross-sectional shape of the region of the adhesive member 13 that is outside the light-emitting element 12 has a convex shape. That is, the cross-sectional shape of the adhesive member 13 extends in a manner of bulging from the position in contact with the side surface of the light-emitting element 12 to the surface parallel to the surface of the first electrode 11a, becomes lower at the periphery of the adhesive member 13, and reaches the surface of the first electrode 11a. In addition, the height of the portion of the adhesive member 13 that contacts the side surface of the light-emitting element 12 is less than 1 / 3 of the height of the light-emitting element 12. As a result, the secondary light emitted from the side surface of the light-emitting element 12 is not blocked, and the light output of the light-emitting device 1 can be improved.

[0067] The adhesive member 13 is formed of a composite resin in which light-reflective particles are dispersed in a light-transmitting dielectric resin.

[0068] The dielectric resin may be a light-transmitting polysilsesquioxane (siloxane compound) resin having a hardness that does not relax the pressing force of bonding in the wire bonding performed after bonding the light-emitting element 12 to the first electrode 11a of the lead frame (first electrode 11a and second electrode 11b). It should be noted that, in addition to this resin, a resin of a trioxysilane-based silsesquioxane derivative may also be used.

[0069] Light-reflective particles can use titanium oxide particles with a particle size of 5nm to 500nm. The particles reflect blue to red visible light (diffuse reflection). By making the particle size of the light-reflective particles wider than the particle size in the Mie scattering region (200nm to 300nm in visible light), particles with small particle sizes enter between particles with large particle sizes, which can improve the hardness of the adhesive component 13. In addition, high reflectivity can be obtained. In addition, aluminum oxide (Al2O3), zinc oxide (ZnO), etc. can also be used as light-reflective particles.

[0070] (Shape and material of the first and second electrodes)

[0071] The first electrode 11a and the second electrode 11b (lead frame) are Figure 1 and Figure 5 The shape shown, the core material is copper (Cu) or copper alloy, and a plating layer (Ni / Au) formed by stacking nickel layer and gold layer in sequence is formed on the surface. As the core material, aluminum (Al) or aluminum alloy, iron-nickel alloy (Fe-Ni42%, Fe-Ni29%-Co17%), etc. can also be used.

[0072] (Shape and material of the frame)

[0073] The frame 10 is formed by insert molding or other techniques by using a resin in which light-reflective particles are dispersed. Figure 1 It is formed in a shape with a concave portion in the center.

[0074] As the resin, for example, a dioxole-based silicone resin, an epoxy resin, or an acrylic resin can be used.

[0075] As light-reflective particles, for example, titanium oxide particles having a particle size of 200 nm to 300 nm may be used. In addition, additive materials such as short fiber glass and nano-silica particles may also be added.

[0076] (Shape and material of light-emitting element)

[0077] The light emitting element 12 may be of any structure as long as it emits light of a desired wavelength from the upper surface and the side surface and emits blue light. Figure 2 In addition, as the amount of secondary light emitted from the side of the light emitting element increases, the effect of the present invention also increases.

[0078] Figure 2The light-emitting element 12 is a structure in which a translucent substrate (sapphire) is used as a growth substrate 22, and an n-nitride layer as an n-type semiconductor layer 23, a light-emitting layer 24 of a multi-quantum well structure (MQW), a p-nitride layer as a p-type semiconductor layer 25, and a translucent p-side electrode 26 are stacked thereon. A p-side electrode pad (anode) 21b is mounted on a portion of the upper surface of the translucent p-side electrode 26. In addition, an n-side electrode pad 21a having the function of an n-side electrode is mounted on a portion of the upper surface of the exposed n-type semiconductor layer 23. The area of ​​the upper surface where the p-side electrode pad 21b and the n-side electrode pad 21a are not provided is covered by a protective film 28. In addition, as needed, a reflective dielectric multilayer film or a metal element reflection layer 27 may be arranged on the lower surface of the growth substrate 22.

[0079] (Material of sealing parts)

[0080] The sealing member 15 is a member in which a wavelength conversion member is dispersed in a dielectric resin that transmits light emitted by the light emitting element 12. Here, silicone resin is used as the dielectric resin, and YAG green-yellow phosphor is used as the wavelength conversion member.

[0081] As the dielectric resin, any resin such as silicone resin, epoxy resin, and acrylic resin can be used.

[0082] As a wavelength conversion component, a component that absorbs the blue light emitted by the light emitting element 12 and is excited and radiates light with a wavelength longer than that of the blue-green light can be selected. For example, LuAG green phosphor, β-type Si ALON green phosphor, CASN red phosphor, S-CASN red phosphor, KFS red phosphor, YAG green-yellow phosphor, orthosilicate green-yellow phosphor, etc. can be used. In addition, nanoparticles of cadmium selenide (CdSe), nanoparticles of indium phosphide (InP), and QD (Quantum Dot: quantum dot) wavelength converters of indium nitride (InN) can also be used. In addition, the QD wavelength converter can also be directly coated on the surface of the light emitting element 12.

[0083] (Manufacturing method)

[0084] use Figure 6 Process diagram and Figure 7 to Figure 15 A method for manufacturing the semiconductor light emitting device 1 according to Embodiment 1 will be described. Here, an example in which the first electrode 11 a and the second electrode 11 b are plated with Au will be described.

[0085] (Step S1: Half Etching Step)

[0086] like Figure 7 As shown, prepare the copper plate, and on the back of the copper plate Figure 8As shown, a resist mask is formed so that the area to be half-etched is exposed. Using an etching solution, the copper plate is etched to about half the thickness.

[0087] (Process S2: Cutting process)

[0088] like Fig. 9 As shown in FIG. 1 , a predetermined area of ​​the copper plate is punched out and removed by a die to form areas to be the first electrode 11 a and the second electrode 11 b . Thus, a lead frame having a plurality of first electrodes 11 a and second electrodes 11 b is formed.

[0089] It should be noted that the lead frame may be formed by removing a predetermined area by etching instead of punching. In this case, a resist mask is formed to cover the first electrode 11a and the second electrode 11b. The area not covered by the resist mask is etched with an etching solution until the copper plate disappears.

[0090] (Step S3: Plating Step)

[0091] like Fig.10 As shown, the surface of the lead frame is plated with Ni and Au in sequence.

[0092] (Step S4: Frame Forming Step)

[0093] The lead frame is clamped in a mold, a resin in which light-reflective particles are dispersed is heated and poured into the mold, and then the resin is cured by insert molding. Fig.11 The frame body 10 is formed in this manner.

[0094] (Step S5: Installation Step)

[0095] like Fig.12 As shown in (a), a resin in which light reflective particles are dispersed, which becomes an adhesive member 13, is applied in an uncured state on the upper surface of the first electrode 11a. At this time, a predetermined amount of the resin is applied using a nozzle or the like so that when the adhesive member 13 is pressed by the light emitting element 12 and expanded, it can be expanded to an area about twice the area of ​​the light emitting element 12.

[0096] like Fig.12 As shown in (b), the light emitting element 12 is held by a tool, and the light emitting element 12 is slowly placed on the uncured adhesive member 13 and pressed. Fig.12As shown in (c) and (d), the uncured adhesive component 13 is pressed and extended not only to the position directly below the light emitting element 12, but also to the position outside the light emitting element 12. At this time, the cross-sectional shape of the adhesive component 13 in the area outside the light emitting element 12 is convex. It should be noted that if ultrasonic vibration is applied at this time, the bulge of the convex part of the cross-sectional shape can be suppressed and pressed to expand outward. Alternatively, even if the surface coated with the adhesive component 13 is sandblasted to make it rough, the same effect can be obtained.

[0097] Next, the adhesive member 13 is cured by heating (for example, 150° C. for 30 minutes) to form the adhesive member 13 extending to the outside of the light emitting element 12 in a predetermined shape.

[0098] Thus, the adhesive member 13 and the center O of the light emitting element 12 are substantially aligned. The adhesive member 13 is a substantially rectangular shape with rounded corners in a plan view, and can be formed in a shape with corners offset from those of the light emitting element 12 by 45 degrees.

[0099] Then, if Fig.12 As in (e), bumps are formed on the upper surfaces of the p-side electrode pad 21b and the n-side electrode pad 21a of the light-emitting element 12, and then the first bonding wire 14a and the second bonding wire 14b are wire-bonded to connect the p-side electrode pad 21b and the n-side electrode pad 21a to the first electrode 11a and the second electrode 11b using the first bonding wire 14a and the second bonding wire 14b.

[0100] Therefore, if Fig.13 As shown, the light emitting element 12 is mounted on the first electrode 11 a and the second electrode 11 b , and the adhesive member 13 is extended to the outside of the light emitting element 12 to be formed into a predetermined shape.

[0101] (Step S6: Sealing Step)

[0102] An uncured sealing member 15 in which phosphor is dispersed is injected into the recess of the frame 10 to bury the periphery of the light emitting element 12, the exposed upper surface of the adhesive member 13, the exposed upper surfaces of the first and second electrodes 11a and 11b, and the first and second bonding wires 14a and 14b.

[0103] Thereafter, the sealing member 15 is cured by a heat treatment (for example, 150° C. for 30 minutes to 150 minutes) or the like.

[0104] Therefore, if Fig.14 As shown, a continuous body in which a plurality of semiconductor light emitting devices 1 are connected via lead frames and a frame body 10 is formed.

[0105] (Step S7: Singulation Step)

[0106] like Fig.15 As shown, each semiconductor light emitting device 1 is cut into individual pieces along its outer shape.

[0107] (Step S8: Power-on inspection step)

[0108] Finally, each semiconductor light emitting device 1 is subjected to a power-on inspection to complete the semiconductor light emitting device 1 .

[0109] Thus, in the manufacturing process of the semiconductor light-emitting device 1 of the present embodiment, the coating amount of the adhesive component 13 is pre-designed, and in an uncured state, the light-emitting element 12 presses the adhesive component 13 to expand it, thereby aligning the positions of the center O of the adhesive component 13 and the light-emitting element 12, and the adhesive component 13 is a rectangle with rounded corners, and the position of the corners can be formed into a shape offset 45 degrees from the position of the corners of the light-emitting element 12.

[0110] (Comparative Example 1)

[0111] The semiconductor light emitting device of Comparative Example 1 is as follows Fig.16 As shown in the middle right figure, the amount of adhesive component 13 (appropriate adhesive amount) is set to obtain an adhesive strength sufficient to bond the light emitting element 12 to the upper surface of the first electrode 11a. Such an amount of adhesive component 13 has a shape extending from the side of the light emitting element 12 to a width equivalent to the height of the light emitting element 12 when viewed from above. Such a semiconductor light emitting device is manufactured by setting the uncured adhesive component 13 applied to the upper surface of the first electrode 11a to an appropriate adhesive amount in the mounting step of step S5.

[0112] (Light output of Embodiment 1 and Comparative Example 1)

[0113] The light outputs of the semiconductor light emitting device of Embodiment 1 and the semiconductor light emitting device of Comparative Example 1 were measured. The results showed that the light output of the semiconductor light emitting device of Embodiment 1 was 3300 mcd, while that of Comparative Example 1 was 3000 mcd. The light output of the semiconductor light emitting device 1 of the present embodiment was more than 10% greater.

[0114] This result is because, compared with the semiconductor light emitting device of the first embodiment, in the semiconductor light emitting device of the first comparative example, part of the secondary light emitted from the side surface of the light emitting element 12 is absorbed by the surface (Au) of the first electrode 11 a, and the light output of the light emitting device is reduced.

[0115] (Implementation Method 2)

[0116] The semiconductor light emitting device of Embodiment 2 is a structure in which the outermost surfaces of the first electrode 11a and the second electrode 11b of the semiconductor light emitting device 1 of Embodiment 1 are replaced with Ag instead of Au. Such a semiconductor light emitting device can be manufactured by plating the first electrode 11a and the second electrode 11b with Ni / Ag in the plating step of step S3.

[0117] (Comparative Example 2)

[0118] The semiconductor light emitting device of Comparative Example 2 is structured as follows: the outermost surfaces of the first electrode 11a and the second electrode 11b of the semiconductor light emitting device 1 of Embodiment 1 are replaced with Ag from Au, and the adhesive member 13 is in a shape extending from the side of the light emitting element 12 to a width equal to the height of the light emitting element 12 when viewed from above. In other words, the outermost surfaces of the first electrode 11a and the second electrode 11b of the semiconductor light emitting device of Comparative Example 1 are replaced with Ag from Au. Such a semiconductor light emitting device can be manufactured by plating the first electrode 11a and the second electrode 11b with Ni / Ag in the plating step of step S3, and setting the uncured adhesive member 13 applied to the upper surface of the first electrode 11a to an appropriate bonding amount in the mounting step of step S5.

[0119] (Light output of Embodiment 2 and Comparative Example 2)

[0120] A test was conducted in accordance with the sulfurization test JEITA ED-4912A, and the semiconductor light emitting device of Embodiment 2 and the semiconductor light emitting device of Comparative Example 2 were corroded, and the light output before and after the corrosion was measured. The results are shown in Table 1.

[0121] [Table 1]

[0122]

[0123] As shown in Table 1, the reflectivity of the first electrode 11a and the second electrode 11b (lead frame) plated with Ag is high in the visible light band, but due to sulfidation (corrosion), it becomes black and the reflectivity decreases. However, the semiconductor light emitting device of Embodiment 2 maintains 85% of the light output before corrosion even after corrosion caused by sulfidation. In contrast, the semiconductor light emitting device of Comparative Example 2 is reduced to 58% before corrosion.

[0124] The reason why the reduction in light output of the semiconductor light emitting device of Embodiment 2 is suppressed to 85% is that, by virtue of the structure in which the adhesive member 13 is extended from the side surface of the light emitting element 12, the reflection of the secondary light emitted from the side surface of the light emitting element 12 is maintained by the adhesive member 13. In other words, only the area corresponding to the contact area between the first electrode 11a and the second electrode 11b corroded (black) by sulfidation and the sealing member 15 can be attenuated.

[0125] Thus, in the semiconductor light emitting device of the second embodiment, the secondary light emitted from the side of the light emitting element 12 that is emitted obliquely downward is reflected by the adhesive member 13, so even if the first electrode 11a and the second electrode 11b are corroded by oxygen, moisture, nitrogen oxides, sulfur oxides, etc. in the atmosphere, they are not easily affected by the decrease in the reflectivity of their surfaces. Therefore, it is possible to suppress the decrease in the light output of the semiconductor light emitting device.

[0126] As described above, in the semiconductor light emitting device of the present embodiment, part of the light emitted from the side of the light emitting element is reflected by the light reflective connection member extending to the outside of the light emitting element. Therefore, even if the lead frame is plated with gold to prevent corrosion, the light output can be maintained. Furthermore, even if the gold plated structure is not plated to prevent corrosion, it is difficult to be affected by the reduction in reflectivity caused by corrosion on the lead frame surface, and a semiconductor light emitting device that maintains light output can be provided.

[0127] The technology of the semiconductor light emitting device of this embodiment can be applied to all EMC (Epoxy Molding Compound) packages, SMC (Silicone Molding Compound) packages, and the like.

[0128] Description of Reference Numerals

[0129] O Center

[0130] WWidth

[0131] 1Semiconductor light emitting device

[0132] 10 Frame

[0133] 11a Electrode

[0134] 11b electrode

[0135] 12 Light emitting elements

[0136] 13 Bonding parts

[0137] 14a First bonding line

[0138] 14b Second bonding line

[0139] 15 Sealing parts

[0140] 21a N-side electrode pad

[0141] 21b p-side electrode pad

[0142] 22 Growth substrate

[0143] 23n-type semiconductor layer

[0144] 24 luminous layers

[0145] 25 p-type semiconductor layer

[0146] 26 p-side electrode

[0147] 27 element reflective layer

[0148] 28 protective film

Claims

1. A semiconductor light emitting device, characterized in that: include: a resin molded body having a concave portion; A pair of electrodes disposed in the resin molded body and composed of a lead frame with a portion of the surface exposed at the bottom of the recessed portion; a light emitting element mounted on a first electrode of a pair of electrodes exposed at the bottom of the recess; as well as an insulating connecting member bonding the bottom surface of the light emitting element to the upper surface of the first electrode, The connecting member has light reflectivity, The connection member has a shape extending to a region outside the rectangular outer shape of the light emitting element, and covers a portion of a region outside the light emitting element on the surface of the first electrode.

2. The semiconductor light emitting device according to claim 1, characterized in that: The connecting component has a rounded rectangular shape and is larger than the light emitting element. The connecting component coincides with the center position of the light emitting element, and the position of the corner of the connecting component is offset by 45 degrees from the position of the corner of the light emitting element.

3. The semiconductor light emitting device according to claim 1, characterized in that: The distance from one side of the rectangular outer shape of the light emitting element to the periphery of the connecting member is largest at the center of one side of the light emitting element and becomes smaller toward both ends of the one side.

4. The semiconductor light emitting device according to claim 3, characterized in that: A predetermined range of the periphery of the connection member is in a curved shape, and the predetermined range includes a position at which the distance from one side of the rectangular outer shape of the light emitting element is the largest.

5. The semiconductor light emitting device according to claim 1, characterized in that: The entire area of ​​the connecting member is at least twice the bottom area of ​​the light emitting element.

6. The semiconductor light emitting device according to claim 1, characterized in that: The connection member has a convex cross-sectional shape in a region outside the light emitting element.

7. The semiconductor light emitting device according to claim 1, characterized in that: Light-reflective particles are dispersed in the connecting member.

8. The semiconductor light emitting device according to claim 1, characterized in that: The upper surfaces of the pair of electrodes exposed at the bottom of the recessed portion are plated with silver.

9. The semiconductor light emitting device according to claim 1, characterized in that: The upper surfaces of the pair of electrodes exposed at the bottom of the recess are plated with gold.

10. The semiconductor light emitting device according to claim 1, characterized in that: A pair of element electrodes is provided on the upper surface of the light emitting element. One of the pair of element electrodes is connected to a portion of the surface of the first electrode that is not covered by the connection member via a wire. The other of the pair of element electrodes is connected to a surface of a second electrode of the pair of electrodes via the wire.

11. The semiconductor light emitting device according to claim 1, characterized in that: The resin molded body and the light emitting element are sealed with a sealing resin that transmits light emitted by the light emitting element, and the sealing resin covers the connection member extending outside the light emitting element and the surface of the electrode not covered by the connection member.

12. The semiconductor light emitting device according to claim 1, characterized in that: The sealing resin contains a light conversion member that absorbs a portion of the light emitted from the light emitting element and radiates light having a longer wavelength than the absorbed light.

13. A method for manufacturing a semiconductor light emitting device, comprising the following steps: Applying a predetermined amount of uncured light reflective resin on an electrode, the electrode being disposed in a resin molded body having a recess and being composed of a lead frame with a portion of the surface exposed at the bottom of the recess; and A light-emitting element is mounted on the uncured light-reflective resin, and the uncured light-reflective resin is pressed by the light-emitting element to expand it to form a connecting component, and the bottom surface of the light-emitting element is bonded to the upper surface of the first electrode. The connecting component has a shape that extends to an area outside the rectangular shape of the light-emitting element and covers a portion of the surface of the electrode outside the light-emitting element.

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