Vapor deposition equipment

Abstract

The invention provides vapor deposition equipment which comprises an electrostatic chuck, an insulating supporting part, a first electrode plate and a second electrode plate, the first electrode plate and the second electrode plate are arranged in parallel, a first groove is formed in the first surface, close to the second electrode plate, of the first electrode plate, and the electrostatic chuck is arranged in the first groove; the insulating supporting part is arranged on the first electrode plate and located on the outer side of the first groove, and in the deposition process, a to-be-deposited substrate is arranged on the side, away from the first electrode plate, of the electrostatic chuck; and the metal mask plate is supported on one side, far away from the first electrode plate, of the substrate to be deposited through the insulating supporting part and is insulated from the first electrode plate. Compared with the prior art, the vapor deposition equipment has the advantages that the metal mask and the to-be-deposited substrate can be tightly attached through electrostatic force, the gap between the metal mask and the to-be-deposited substrate is effectively reduced, and a narrow frame of a display panel can be achieved.

Description

Technical Field

[0001] The present disclosure relates to the field of vapor deposition technology, and more specifically, to a vapor deposition device. Background Art

[0002] As smartphones, tablets, TVs and other display devices pursue narrow-border designs, organic light-emitting diode (OLED) display panel narrow-border technology has become an industry development trend. The realization of narrow borders for OLED display panels mainly relies on advanced packaging technology and circuit design. By optimizing these technologies, manufacturers can reduce the border width while maintaining display panel performance.

[0003] However, in the packaging process, especially in the process of preparing the inorganic packaging layer by chemical vapor deposition (CVD) process, the small gap caused by the natural bonding of the metal mask and the glass substrate will lead to film formation in the shadow area, affecting the realization of the narrow frame. The related technology mainly reduces the gap caused by the bonding of the metal mask and the glass substrate by strictly controlling the metal mask manufacturing process, but the effect is limited. Summary of the invention

[0004] The purpose of the present disclosure is to provide a vapor deposition device to solve the problem of film formation in the shadow area caused by the gap between the metal mask and the substrate in the related art, so as to achieve a narrow frame of the display panel.

[0005] In order to achieve the above objectives, the present invention adopts the following technical solutions:

[0006] A first aspect of the present disclosure provides a vapor deposition device, comprising an electrostatic suction cup, an insulating support portion, and a first electrode plate and a second electrode plate arranged in parallel, wherein a first groove is arranged on a first surface of the first electrode plate close to the second electrode plate, the electrostatic suction cup is arranged in the first groove, the insulating support portion is arranged on the first electrode plate and is located outside the first groove, and during the deposition process, a substrate to be deposited is arranged on a side of the electrostatic suction cup away from the first electrode plate, and a metal mask is supported by the insulating support portion and arranged on a side of the substrate to be deposited away from the first electrode plate and is insulated from the first electrode plate.

[0007] Optionally, a second groove surrounding the first groove is further provided on the first surface, the insulating support portion is provided in the first electrode plate, the insulating support portion has a supporting surface protruding from the bottom wall of the second groove, the metal mask plate includes a metal frame, a first extension portion is provided on the metal frame, and the end support of the first extension portion is provided on the supporting surface.

[0008] Optionally, the substrate to be deposited and the metal mask are in a quadrilateral shape, and the orthographic projection of the supporting surface of the insulating supporting portion on the second electrode plate is in a quadrilateral shape.

[0009] Optionally, the insulating support portion includes a plurality of support blocks, and the plurality of support blocks are evenly distributed in the second groove.

[0010] Optionally, the insulating support portion adopts a ceramic spacer.

[0011] Optionally, the electrostatic chuck includes an electrostatic electrode and an insulating layer covering the electrostatic electrode, and an input voltage of the electrostatic electrode is a first DC voltage.

[0012] Optionally, the input voltage of the first electrode plate and the second electrode plate is a first alternating current voltage.

[0013] Optionally, the orthographic projection of the electrostatic chuck on the second electrode plate covers the orthographic projection of the substrate to be deposited on the second electrode plate.

[0014] Optionally, an insulating protective layer is formed on the surface of the metal mask.

[0015] Optionally, the material of the insulating protective layer includes at least one of aluminum oxide, magnesium oxide, titanium oxide, and zinc oxide.

[0016] The beneficial effects of the present disclosure are as follows:

[0017] The vapor deposition equipment of the disclosed embodiment is provided with an electrostatic suction cup and an insulating support portion. During the vapor deposition process, the substrate to be deposited is arranged on the electrostatic suction cup, and the metal mask is supported and arranged above the substrate to be deposited by the insulating support portion and naturally fits with the substrate to be deposited. After the electrostatic suction cup is energized, the polarization of the surface of the substrate to be deposited can be achieved, and the polarization of the surface of the substrate to be deposited further polarizes the surface of the metal mask. Since the metal mask is supported by the insulating support portion, the polarized charge on the metal mask will not be drawn away. At this time, the metal mask and the substrate to be deposited are tightly fitted by electrostatic force, which can effectively reduce the gap between the metal mask and the substrate to be deposited, thereby alleviating the shadow area formed during the deposition process, which is conducive to achieving a narrow frame of the display panel. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] The specific implementation methods of the present disclosure are further described in detail below with reference to the accompanying drawings.

[0019] Figure 1 It is a structural schematic diagram of the lower frame of the display panel in the related art;

[0020] Figure 2It is a schematic diagram of the principle that the gap between the metal mask and the substrate in the CVD process of the lower frame of the display panel in the related art leads to a large size of the lower frame;

[0021] Figure 3 A schematic structural diagram of a vapor deposition device provided in an embodiment of the present disclosure;

[0022] Figure 4 A schematic diagram of the structure of a metal mask provided in an embodiment of the present disclosure;

[0023] Figure 5 A schematic diagram of the principle of an electrostatic chuck provided in an embodiment of the present disclosure. DETAILED DESCRIPTION

[0024] In order to make the purpose, technical solution and advantages of the embodiments of the present disclosure clearer, the technical solution of the embodiments of the present disclosure will be clearly and completely described below in conjunction with the drawings of the embodiments of the present disclosure. Obviously, the described embodiments are part of the embodiments of the present disclosure, not all of the embodiments. Based on the described embodiments of the present disclosure, all other embodiments obtained by ordinary technicians in this field without creative work are within the scope of protection of the present disclosure.

[0025] Unless otherwise defined, the technical terms or scientific terms used in the present disclosure should be understood by people with ordinary skills in the field to which the present disclosure belongs. The "first", "second" and similar words used in the present disclosure do not indicate any order, quantity or importance, but are only used to distinguish different components. Similarly, similar words such as "one", "one" or "the" do not indicate quantity restrictions, but indicate that there is at least one. Similar words such as "include" or "comprise" mean that the elements or objects appearing before the word cover the elements or objects listed after the word and their equivalents, without excluding other elements or objects. Similar words such as "connect" or "connected" are not limited to physical or mechanical connections, but can include electrical connections, whether direct or indirect. "Up", "down", "left", "right" and the like are only used to indicate relative positional relationships. When the absolute position of the described object changes, the relative positional relationship may also change accordingly.

[0026] In the related art, OLED display panels usually adopt a packaging structure in which organic layers and inorganic layers are stacked. For example, the packaging layer includes a first inorganic packaging layer, an organic packaging layer, and a second inorganic packaging layer stacked in sequence, wherein the first inorganic packaging layer and the second inorganic packaging layer are prepared by a chemical vapor deposition process, that is, a CVD process, wherein a metal mask is required in the CVD process to complete the formation of a specific pattern. In the film formation process of the inorganic packaging layer, the metal mask and the glass substrate are naturally attached, and a small gap is inevitably generated. Since the CVD process is a vapor deposition process, a thin film is easily formed at the gap. This area is called a shadow area. The length and thickness of the inorganic film in the shadow area will affect the frame design of the display panel.

[0027] Take the following border as an example, please refer to Figure 1 and Figure 2 ,in Figure 1 It is a schematic diagram of the structure of the lower frame of the display panel. Figure 2 This is a schematic diagram of the principle that the gap between the metal mask and the substrate in the CVD process causes the lower frame of the display panel to be large in size. Specifically, Figure 2 Corresponds to Figure 1 The area shown in the dashed box is Figure 1 and Figure 2 As shown, the lower frame of the display panel generally has a touch circuit T1 or a display driving circuit T2 overlapped area (such as Figure 1 As shown in FIG. 1 , the flexible circuit board 400 is bound to the touch circuit T1 or the display driving circuit T2 in the overlapping area. If an inorganic thin film layer is formed in the overlapping area Q2, the touch circuit T1 or the display driving circuit T2 will be broken, and the display panel will not work properly. Figure 2 As shown, the metal mask Mask has a hollow area, and the size of the hollow area is consistent with the size of the inorganic packaging layer (recorded as a CVD film layer), such as Figure 1 As shown in the middle area Q1, the area Q1 represents the area covered by the inorganic encapsulation layer in the display panel. When the non-hollow area is attached to the glass substrate to be deposited, if there is a gap between the non-hollow area of ​​the metal mask Mask and the glass substrate, such as Figure 2 When the gap height is d, an inorganic film layer will also be formed in the gap, that is, a shadow area. If there is an inorganic film layer in the touch overlap area or the display drive overlap area, it will cause a short circuit. Therefore, the overlap area needs to be set outside the shadow area. At this time, the border size of the display panel will increase, which is not conducive to the realization of a narrow border.

[0028] In order to solve this technical problem, the present disclosure provides a vapor deposition device, which improves the structure of the vapor deposition device to improve the gap generated when the metal mask and the substrate to be deposited are bonded, so that the metal mask and the substrate to be deposited can be better bonded, avoiding the formation of shadow areas in the preparation process of the inorganic packaging layer, and thus realizing a narrow frame design.

[0029] Please refer to Figure 3 , Figure 3 A schematic diagram of the structure of a vapor deposition device provided in an embodiment of the present disclosure, such as Figure 3 As shown, the vapor deposition equipment includes an electrostatic suction cup 110, an insulating support portion 120, and a first electrode plate 130 and a second electrode plate 140 arranged in parallel, a first groove 1310 is arranged on the first surface of the first electrode plate 130 close to the second electrode plate 140, the electrostatic suction cup 110 is arranged in the first groove 1310, the insulating support portion 120 is arranged on the first electrode plate 130 and is located outside the first groove 1310, and in the deposition process, the substrate 200 to be deposited is arranged on the side of the electrostatic suction cup 110 away from the first electrode plate 130, and the metal mask 300 is supported by the insulating support portion 120 and arranged on the side of the substrate 200 to be deposited away from the first electrode plate 130 and is insulated from the first electrode plate 130.

[0030] Optionally, the vapor deposition device in the embodiment of the present disclosure refers to a chemical vapor deposition device, which includes a reaction chamber, and the first electrode plate 130 and the second electrode plate 140 are located inside the reaction chamber and are arranged relative to each other. The relative arrangement of the first electrode plate 130 and the second electrode plate 140 can be specifically: the first electrode plate 130 is arranged at the bottom of the reaction chamber, and the second electrode plate 140 is arranged at the top of the reaction chamber, or the first electrode plate 130 and the second electrode plate 140 are both arranged on the side wall of the reaction chamber, which is not limited here.

[0031] In the embodiment of the present disclosure, the first electrode plate 130 is arranged at the bottom of the reaction chamber, and the second electrode plate 140 is arranged at the top of the reaction chamber. In this case, the first electrode plate 130 can also be represented as a lower electrode plate, and the second electrode plate 140 can also be represented as an upper electrode plate. The first electrode plate 130 and the second electrode plate 140 are arranged in parallel, and the area between the first electrode plate 130 and the second electrode plate 140 forms a reaction area. In addition, the vapor deposition equipment also includes a gas reactor (not shown in the figure), which is arranged below the second electrode plate 140 and is electrically connected to the second electrode plate 140 through an electrical connection sheet. During the vapor deposition process, the substrate 200 to be deposited (for example, a glass substrate with a light-emitting device layer formed thereon and to be packaged) and the metal mask 300 are placed in the reaction area, and are located above the first electrode plate 130 and below the gas reactor, and the metal mask 300 is located on the side of the substrate 200 to be deposited close to the second electrode plate 140 in the reaction area. In specific implementation, the substrate 200 to be deposited is placed on the first electrode plate 130, and the metal mask 300 is naturally attached to the substrate 200 to be deposited. When power is applied to the second electrode plate 140, an electric field is formed between the first electrode plate 130 and the second electrode plate 140. When the energy of this electric field is high enough, the gas in the gas reactor can be electrolyzed, the ions of the gas can be separated, and the separated ions can be finally deposited on the substrate 200 to be deposited to form a film layer. In the process of preparing the inorganic encapsulation layer, the formed film layer is the inorganic encapsulation layer.

[0032] In order to solve the gap problem when the substrate 200 to be deposited and the metal mask 300 are attached, the main improvements of the embodiment of the present disclosure include: an electrostatic chuck 110 is provided on the first electrode plate 130 , and an insulating support portion 120 is provided to support the metal mask 300 .

[0033] Among them, the electrostatic suction cup 110 is also called an electrostatic chuck (ESC, E-Chuck), which is a clamp that uses the principle of electrostatic adsorption to fix the adsorbed object. In the embodiment of the present disclosure, after the electrostatic suction cup 110 is set inside the first electrode plate 130, the substrate 200 to be deposited is set on the electrostatic suction cup 110, that is, the electrostatic suction cup 110 supports the substrate 200 to be deposited in the vapor deposition process. The electrostatic force generated by the electrostatic suction cup 110 after being energized will cause the surface charge of the substrate 200 to be deposited to be re-polarized and arranged. After the surface of the substrate 200 to be deposited is polarized, the surface of the metal mask 300 will be polarized. Since the metal mask 300 is supported by the insulating support part 120 and insulated from the first electrode plate 130, the polarized charge in the metal mask 300 will not be conducted away. Finally, the substrate 200 to be deposited and the metal mask 300 are tightly attached by electrostatic force. This bonding method not only improves the uniformity and stability of bonding, but also effectively reduces the formation of shadow areas, that is, the film formation in the shadow area is effectively improved.

[0034] The insulating support part 120 refers to a support part with insulating properties, through which the metal mask 300 can be supported, and the contact with the metal mask 300 is insulated. In specific implementation, the metal mask 300 is suspended above the first electrode plate 130 through the insulating support part 120, that is, there is no physical contact between the metal mask 300 and the first electrode plate 130, so that the polarized charge in the metal mask 300 will not be conducted away.

[0035] Optionally, the insulating support portion 120 is made of a ceramic pad. It is understandable that the insulating support portion 120 can also be made of other insulating materials as required.

[0036] In the embodiment of the present disclosure, a first groove 1310 for accommodating the electrostatic chuck 110 is provided on the first surface of the first electrode plate 130, that is, on the upper surface of the first electrode plate 130, and the shape and size of the first groove 1310 match the shape and size of the electrostatic chuck 110. For example, the shape and size match can be expressed as the same shape and size, and the electrostatic chuck 110 is just accommodated in the first groove 1310. In addition, the shape and size of the electrostatic chuck 110 match the shape and size of the substrate 200 to be deposited.

[0037] Optionally, the shape and size of the electrostatic chuck 110 are the same as the shape or size of the substrate 200 to be deposited; or, the shape of the electrostatic chuck 110 is the same as the shape of the substrate 200 to be deposited, and the size of the electrostatic chuck 110 is slightly larger than the size of the substrate 200 to be deposited, that is, the orthographic projection of the electrostatic chuck 110 on the second electrode plate 140 at least covers the orthographic projection of the substrate 200 to be deposited on the second electrode plate 140.

[0038] Optionally, the substrate 200 to be deposited in the embodiment of the present disclosure is a glass substrate, on which a driving circuit layer, a pixel defining layer, a first electrode layer, a light-emitting device layer and a second electrode layer are sequentially stacked, and an inorganic encapsulation layer can be formed on the second electrode layer by the vapor deposition equipment of the embodiment of the present disclosure. Exemplarily, the material of the inorganic encapsulation layer can be an inorganic material such as silicon nitride, silicon oxide, silicon oxynitride, etc.

[0039] Compared with the related art, the vapor deposition equipment of the embodiment of the present disclosure is provided with an electrostatic suction cup and an insulating support portion. During the vapor deposition process, the substrate to be deposited is arranged on the electrostatic suction cup, and the metal mask is supported by the insulating support portion and arranged above the substrate to be deposited and naturally fits with the substrate to be deposited. After the electrostatic suction cup is energized, the polarization of the surface of the substrate to be deposited can be achieved, and the polarization of the surface of the substrate to be deposited further polarizes the surface of the metal mask. Since the metal mask is supported by the insulating support portion, the polarized charge on the metal mask will not be drawn away. At this time, the metal mask and the substrate to be deposited are tightly fitted by electrostatic force, which can effectively reduce the gap between the metal mask and the substrate to be deposited, thereby alleviating the shadow area formed during the deposition process, which is conducive to achieving a narrow frame of the display panel.

[0040] In addition, although a magnetic chuck can be used to adsorb the metal mask to fit the glass substrate in some cases, it is not possible to use a magnetic chuck to adsorb the metal mask due to the particularity of the CVD process. On the one hand, the magnetic field generated by the magnetic chuck may interfere with the chemical reaction or deposition process in the CVD process, resulting in a decrease in the quality of the deposited layer. On the other hand, the CVD process usually needs to be carried out at high temperatures, and the magnetic chuck may lose its magnetism or performance in a high temperature environment, and cannot meet the process requirements. The electrostatic adsorption solution provided in the embodiment of the present disclosure will not have an adverse effect on the CVD process when it is applied to vapor deposition equipment.

[0041] In a possible implementation, an insulating protective layer is formed on the surface of the metal mask 300 , that is, a layer of insulating protective material is covered on the surface of the metal mask 300 to form the insulating protective layer.

[0042] Optionally, the metal mask 300 is made of Invar alloy. In the disclosed embodiment, an insulating protective layer is formed on the surface of the metal mask 300, which can enhance the surface hardness and corrosion resistance of the metal mask 300, and promote the polarization of the metal mask 300, providing favorable conditions for subsequent electrostatic bonding.

[0043] Optionally, the material of the insulating protective layer includes at least one of aluminum oxide, magnesium oxide, titanium oxide, and zinc oxide. In the disclosed embodiment, the material of the insulating protective layer is an anodized material, such as aluminum oxide, magnesium oxide, titanium oxide, zinc oxide, and the like. In a specific implementation, a layer of insulating protective layer can be formed on the surface of the metal mask by vacuum sputtering.

[0044] It is understandable that the embodiments of the present disclosure only exemplarily illustrate that the insulating protective layer is made of anodized material. In other embodiments, the insulating protective layer may also be made of other feasible insulating protective materials.

[0045] Optionally, in the embodiment of the present disclosure, the substrate 200 to be deposited is a quadrilateral (such as a rectangle), and the metal mask 300 is also a quadrilateral.

[0046] For example, Figure 4 As shown, the metal mask 300 includes a metal frame 310, a plurality of support bars 320 and a plurality of metal mask sheets 330. The middle part of the metal frame 310 is a hollow area. For example, the metal frame 310 can be a rectangular metal frame, and a rectangular hollow area is arranged in the middle of the rectangular frame. The plane structure of the metal frame 310 is a "U" structure. However, in practical applications, the shape of the metal frame 310 and the shape of the hollow area in the middle of the metal frame 310 can be specifically set according to the shape of the deposition required on the substrate 2 to be deposited, and no limitation is made here. The support bars 320 are in the shape of strips, wherein some of the support bars are arranged across the hollow area of ​​the metal frame 310 along a first direction (such as a horizontal direction), and the remaining support bars 320 are arranged across the hollow area of ​​the metal frame 310 along a second direction (such as a vertical direction). The plurality of support bars 320 arranged along the first direction and the plurality of support bars 320 arranged along the second direction cross each other to form a support network, and the two ends of the support bars are respectively connected to the metal frame 310. The metal mask sheet 330 is located above the support bar 320, and the metal mask sheet 330 is fixedly welded to the support net formed by the metal frame 310 and the support bar 320 through a net stretching device. A hollow area (that is, an opening) is formed on each metal mask sheet 330, and the hollow area corresponds to the packaging area where the inorganic material needs to be deposited in the CVD process, that is, the hollow area corresponds to the packaging area where the inorganic material needs to be deposited in the CVD process. Figure 1 The middle area corresponds to Q1.

[0047] The insulating protective layer is formed on the surface of the metal mask 300, which means that the entire surface of the metal mask 300 is covered by the insulating protective layer. Figure 4 The metal mask shown can also be understood as the metal frame 310 of the metal mask 300 , the support bars 320 and the non-hollowed-out areas on the metal mask sheet 330 being covered with an insulating protective layer.

[0048] In a possible implementation, a second groove 1320 surrounding the first groove 1310 is further provided on the first surface, the insulating support portion 120 is provided in the first electrode plate 130, and the insulating support portion 120 has a supporting surface protruding from the bottom wall of the second groove 1320, and the metal mask 300 includes a metal frame 310, and a first extension portion 340 is provided on the metal frame 310, and the end 340a of the first extension portion 340 is supported and provided on the supporting surface.

[0049] like Figure 3As shown, the first extension portion 340 on the metal mask 300 extends in a first direction, wherein the first direction intersects with the plane where the metal frame 310 of the metal mask 300 is located, that is, the first extension portion 340 extends in a direction away from the plane where the metal mask 300 is located, and when the metal mask 300 is attached to the substrate 200 to be deposited, the end of the first extension portion 340 extends into the second groove 1320 and contacts the supporting surface of the insulating support portion 120 protruding from the bottom wall of the second groove 1320, and at this time, the insulating support portion 120 supports the metal mask 300. In order to achieve insulation between the metal mask 300 and the first electrode plate 130, the end of the first extension portion 340 extending into the second groove 1320 has no contact with the side wall and the bottom wall of the second groove 1320, that is, the size of the first extension portion 340 is slightly smaller than the size of the second groove 1320.

[0050] In a possible implementation, the substrate 200 to be deposited and the metal mask 300 are quadrilateral, and the orthographic projection of the supporting surface of the insulating support portion 120 on the second electrode plate 140 is quadrilateral.

[0051] In the embodiment of the present disclosure, the support surface of the insulating support part 120 has a quadrilateral projection on the second electrode plate 140, which can be understood as the insulating support part 120 being a circle structure surrounding the substrate 200 to be deposited. At this time, the substrate 200 to be deposited can provide supporting force for various positions on the metal frame of the metal mask 300, and the supporting effect is better.

[0052] Optionally, the insulating support portion 120 includes a plurality of support blocks, and the plurality of support blocks 120 are evenly distributed in the second groove 1320. In the embodiment of the present disclosure, the insulating support portion 120 can provide support force for a plurality of positions on the metal frame of the metal mask 300, and each position corresponds to a support block. Exemplarily, each support block is an independent ceramic pad. With such a configuration, the structure of the insulating support portion 120 is simple and the manufacturing process can be simplified.

[0053] In a possible implementation, the electrostatic chuck 110 includes an electrostatic electrode and an insulating layer covering the electrostatic electrode, and the input voltage of the electrostatic chuck 110 is a first DC voltage. When the first DC voltage is input to the electrostatic chuck 110, a first electric field of electrostatic force is generated.

[0054] For example, please refer to Figure 5 , Figure 5 is a schematic diagram of the structure of the electrostatic chuck, such as Figure 5As shown, the electrostatic chuck 110 includes an insulating layer 1110 and an electrostatic electrode 1120. The insulating layer 1110 is used to contact the substrate 200 to be deposited. It is usually aluminum nitride or aluminum oxide ceramics, and has good mechanical strength, high temperature resistance and thermal conductivity. The electrostatic electrode 1120 is used to generate an electric field of electrostatic force. The electrostatic electrode 1120 is usually planar, and is embedded or deposited in an insulating material to form a structure covered by the insulating layer 1110. The material of the electrostatic electrode 1120 can be a metal with good conductivity such as aluminum, copper or tungsten. Optionally, the first voltage is a direct current voltage. When the direct current voltage is applied to the electrostatic electrode 1120, the electrostatic electrode 1120 forms an electrostatic electric field, and the electrostatic electric field causes the charges on the surface of the substrate 200 to be deposited to be re-polarized and arranged. Specifically, the charge polarization direction is that the positive charge moves toward the negative electrode and the negative charge moves toward the positive electrode. The polarization of the substrate 200 to be deposited further causes the metal mask 300 to be polarized, and then the substrate 200 to be deposited and the metal mask 300 are adsorbed together by electrostatic force.

[0055] Optionally, the input voltage of the first electrode plate 130 and the second electrode plate 140 is a first AC voltage, that is, the input voltage between the first electrode plate 130 and the second electrode plate 140 is the first AC voltage. Exemplarily, the first AC voltage is a high-frequency AC voltage, and its frequency is, for example, 13.56 MHz, and the voltage range is, for example, 500 to 1000 V. When the first AC voltage is input between the first electrode plate 130 and the second electrode plate 140, the electric field formed between the first electrode plate 130 and the second electrode plate 140 causes the process gas in the gas reactor to dissociate.

[0056] In the embodiment of the present disclosure, the electrostatic field formed when the electrostatic chuck 120 is powered on (such as inputting the first DC voltage VCC) is recorded as the first electric field, and the electric field formed when the first electrode plate 130 and the second electrode plate 140 are powered on (such as inputting the second AC voltage) is recorded as the second electric field, wherein the input voltage type, the region in which they are located, and the electric field strength of the first electric field and the second electric field are different, and the influence between the first electric field and the second electric field can be ignored, that is, the dissociation effect of the first DC voltage on the first AC voltage can be ignored, and the influence of the first AC voltage on the electrostatic field generated by the first DC voltage can also be ignored. Specifically, the area of ​​the first electric field is between the electrostatic chuck 120 and the substrate 200 to be deposited and the metal mask 300, and the area of ​​the second electric field is between the first electrode plate 130 and the second electrode plate 140, the input of the first electric field is a DC voltage, the input of the second electric field is an AC voltage, and the electric field strength of the first electric field is much smaller than the electric field strength of the second electric field.

[0057] Based on the same inventive concept, the second aspect of the present disclosure provides a display panel, which includes a base substrate, a driving circuit layer, a pixel defining layer, a first electrode layer, a light-emitting device layer, a second electrode layer and an encapsulation layer stacked in sequence on the base substrate, the encapsulation layer including a first inorganic encapsulation layer, an organic encapsulation layer and a second inorganic encapsulation layer stacked in sequence, wherein the first inorganic encapsulation layer and the second inorganic encapsulation layer are prepared by the vapor deposition equipment provided by the embodiment of the present disclosure. Since the metal mask plate can be closely fitted to the substrate to be deposited during the preparation of the first inorganic encapsulation layer and the second inorganic encapsulation layer, the width of the shadow area can be effectively shortened, which is conducive to achieving the narrow frame design requirements of the display panel.

[0058] Optionally, the first inorganic encapsulation layer and the second inorganic encapsulation layer may be formed of inorganic materials such as silicon nitride, silicon oxide, silicon oxynitride, etc., and the organic encapsulation layer may be formed of organic materials such as polyimide (PI) and epoxy resin.

[0059] Exemplarily, the driving circuit layer includes an active layer (Active) formed on the substrate by a patterning process, a gate insulating layer (GI) formed on the active layer by deposition or the like, a gate (Gate) of a thin film transistor formed on the gate insulating layer by a patterning process, a dielectric layer (ILD) formed on the gate by deposition or the like, a source-drain metal layer formed on the dielectric layer, and a flat layer (PLN) covering the source-drain metal layer and the exposed dielectric layer, wherein the source-drain metal layer forms the source (Source) and drain (Drain) of the thin film transistor, for example, the source is electrically connected to the active layer through a dielectric layer via. Among them, the active layer can be made of materials such as polysilicon and metal oxide, the gate insulating layer can be made of inorganic insulating materials such as silicon oxide, silicon nitride or silicon oxynitride, and the dielectric layer can be made of inorganic insulating materials such as silicon oxide, silicon nitride or silicon oxynitride. The gate material includes metals or alloy materials such as aluminum, titanium, and cobalt. The flat layer is, for example, an organic material.

[0060] The first electrode layer is, for example, an anode layer, which may be made of metal oxides such as ITO and IZO or metals such as Ag, Al, Mo or their alloy materials. The anode is electrically connected to the drain electrode through a via hole opened in the planar layer.

[0061] The pixel defining layer may be formed by a patterning process and surrounds the anode. Exemplarily, the material of the pixel defining layer may include organic insulating materials such as negative photoresist, polyimide, and epoxy resin.

[0062] The light-emitting device layer is formed on the anode exposed by the opening of the pixel definition layer. The light-emitting device layer includes a light-emitting layer (EML), and the light-emitting layers of sub-pixels of different colors are different. For example, the red sub-pixel includes a red light-emitting layer, the green sub-pixel includes a green light-emitting layer, and the blue sub-pixel includes a blue light-emitting layer. The light-emitting device layer may also include an auxiliary light-emitting layer that helps the light-emitting layer emit light. The auxiliary light-emitting layer, for example, includes a hole injection layer (HIL, Hole Injection Layer), a hole transport layer (HTL, Hole Transport Layer), an electron blocking layer (EIL, Electron Injection Layer), a hole blocking layer (HBL, Hole Block Layer), an electron transport layer (ETL, Electron Transport Layer) and an electron injection layer (EIL, Electron Injection Layer) One or more film layers. The light-emitting layer and the auxiliary light-emitting layer are, for example, organic material layers.

[0063] The second electrode layer is, for example, a cathode layer. The cathode is formed on the entire surface of the OLED display panel, covering the light-emitting device layer and the pixel defining layer. The material of the cathode may include metals such as Mg, Ca, Li or Al or their alloys, or metal oxides such as IZO and ZTO, or organic materials with conductive properties such as PEDOT / PSS (poly 3,4-ethylenedioxythiophene / polystyrene sulfonate).

[0064] In addition, the display panel may further include a cover plate (eg, a glass cover plate CG) located on the encapsulation layer.

[0065] In the disclosed embodiment, the display panel may be an organic light-emitting diode (OLED) display panel. It is understandable that the display panel may be set to other types according to actual needs, for example, the display panel may be a quantum dot light emitting diode (QLED) display panel or a micro light emitting diode (Micro LED) display panel.

[0066] Based on the same inventive concept, the third aspect of the present disclosure provides a display device, including the display panel as described above. Exemplarily, the display device can be any product or component with a display function, such as a mobile phone, a tablet computer, a television, a monitor, a notebook computer, a digital photo frame, a navigator, etc., which is not limited in this embodiment.

[0067] Obviously, the above embodiments of the present disclosure are merely examples for clearly illustrating the present disclosure, and are not limitations on the implementation methods of the present disclosure. For ordinary technicians in this field, other different forms of changes or modifications can be made on the basis of the above description. It is impossible to list all the implementation methods here. All obvious changes or modifications derived from the technical solution of the present disclosure are still within the protection scope of the present disclosure.

Claims

1. A vapor deposition device, characterized in that: It includes an electrostatic suction cup, an insulating support portion, and a first electrode plate and a second electrode plate arranged in parallel. A first groove is arranged on the first surface of the first electrode plate close to the second electrode plate, the electrostatic suction cup is arranged in the first groove, the insulating support portion is arranged on the first electrode plate and is located outside the first groove, and in the deposition process, the substrate to be deposited is arranged on the side of the electrostatic suction cup away from the first electrode plate, and the metal mask is supported by the insulating support portion and arranged on the side of the substrate to be deposited away from the first electrode plate and is insulated from the first electrode plate.

2. The vapor deposition apparatus according to claim 1, characterized in that: A second groove surrounding the first groove is also arranged on the first surface, the insulating support portion is arranged in the first electrode plate, and the insulating support portion has a supporting surface protruding from the bottom wall of the second groove. The metal mask plate includes a metal frame, and a first extension portion is arranged on the metal frame, and the end support of the first extension portion is arranged on the supporting surface.

3. The vapor deposition apparatus according to claim 2, characterized in that: The substrate to be deposited and the metal mask are in the shape of a quadrilateral, and the orthographic projection of the supporting surface of the insulating supporting portion on the second electrode plate is in the shape of a quadrilateral.

4. The vapor deposition apparatus according to claim 2, characterized in that: The insulating support portion includes a plurality of support blocks, and the plurality of support blocks are evenly distributed in the second groove.

5. The vapor deposition apparatus according to any one of claims 1 to 4, characterized in that: The insulating support portion adopts a ceramic pad.

6. The vapor deposition apparatus according to claim 5, characterized in that: The electrostatic chuck includes an electrostatic electrode and an insulating layer covering the electrostatic electrode, and an input voltage of the electrostatic electrode is a first direct current voltage.

7. The vapor deposition apparatus according to claim 6, characterized in that: The input voltage of the first electrode plate and the second electrode plate is a first alternating current voltage.

8. The vapor deposition apparatus according to claim 1, characterized in that: The orthographic projection of the electrostatic chuck on the second electrode plate covers the orthographic projection of the substrate to be deposited on the second electrode plate.

9. The vapor deposition apparatus according to claim 1, characterized in that: An insulating protection layer is formed on the surface of the metal mask.

10. The vapor deposition apparatus according to claim 9, characterized in that: The material of the insulating protection layer includes at least one of aluminum oxide, magnesium oxide, titanium oxide and zinc oxide.

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