Optical proximity effect correction method for metal wire and through hole layout and related equipment

Abstract

The invention relates to an optical proximity effect correction method for a metal wire and through hole layout and related equipment, and the method comprises the steps: obtaining an original metal wire and through hole layout, taking the direction, perpendicular to the extension direction of an interconnection metal wire, in a plane of a layer where the interconnection metal wire is located as the width direction, metal wires, adjacent to the interconnection metal wires in the width direction, in the metal wire layer are influence metal wires, the influence metal wires comprise influence metal line segments, and the influence metal line segments are projection area line segments, on the influence metal wires, of the connecting through holes in the width direction; performing chambering treatment on each connecting through hole in the width direction to form an expanded connecting through hole; translating each influencing metal line segment for a certain distance in the width direction along the direction far away from the interconnected metal line to form a pre-processed metal line and through hole layout; and performing optical proximity correction on the pre-processed metal wire and through hole layout to obtain a corrected metal wire and through hole layout, so that a photoetching process window can be enlarged, and the metal wire is not easy to have the defects of bridging and the like.

Description

Technical Field

[0001] The present application relates to the field of semiconductor manufacturing technology, and in particular to a method, device and computer-readable storage medium for correcting optical proximity effect of metal line and through-hole layout. Background Art

[0002] In the mid- and back-end processes of semiconductors, in order to form metal interconnects, it is necessary to form through-holes between two layers of metal wires in different layers to achieve metal interconnection. With the increase in circuit density and the smaller critical dimensions, as well as the introduction of multi-patterning technology, the spacing between metal wires and the size of through-holes are getting smaller and smaller, and the circuit density is getting larger and larger. Especially for integrated circuits with technology nodes below 50nm, it is easy to cause the photolithography process window of the metal wire to be too small, affecting the yield of the product. At the same time, when the integrated circuit pattern on the mask is transferred to the photoresist layer on the wafer through the photolithography process, it is often distorted due to the optical proximity effect. The dense area of ​​the metal interconnect pattern is prone to bridge defects due to this distortion, and due to the presence of through-holes, the photolithography process window of this part of the metal interconnect is too small.

[0003] In order to solve the above problems, the optical proximity correction (OPC) method is usually used to correct the pattern on the mask. The conventional OPC correction is generally to enlarge the through hole as a whole and reduce the metal interconnection line, and then use the OPC model to correct the enlarged through hole and the reduced interconnection line, so as to enlarge the lithography process window on the basis of satisfying the circuit conduction.

[0004] However, as the technology nodes of integrated circuits become smaller and smaller (≤90nm), the enlargement of adjacent through holes is prone to produce through hole bridge defects, and the reduction of metal interconnects is prone to electromigration, which causes local thinning (necking) defects in the metal interconnect layer. In addition, due to the influence of processes such as etching and chemical mechanical polishing (CMP), the risk of metal interconnect line breakage increases. Summary of the invention

[0005] The purpose of the present application is to provide a method, device and computer-readable storage medium for correcting the optical proximity effect of metal line and via layout, so as to increase the photolithography process window of metal interconnects and vias, and make the metal interconnects less prone to defects such as bridges, neckings and open circuits, thereby improving product yield.

[0006] The embodiment of the present application provides a method for correcting optical proximity effect of metal line and via layout, comprising:

[0007] Obtaining an original metal line and through-hole layout, the original metal line and through-hole layout comprising at least two layers of metal line layers and a square through-hole layer connecting metal lines respectively located in different layers, the metal line layer comprising interconnection metal lines, the interconnection metal lines being connected to connection through-holes; within the plane of the layer where the interconnection metal lines are located, the direction perpendicular to the extension direction of the interconnection metal lines is the width direction, the projection of the connection through-hole on the horizontal plane is within the projection of the interconnection metal lines on the horizontal plane, and the size of the connection through-hole in the width direction is equal to the width of the interconnection metal lines; the metal lines in the metal line layer adjacent to the interconnection metal lines in the width direction are influencing metal lines, the influencing metal lines include influencing metal line segments, and the influencing metal line segments are line segments of the projection area of ​​the connection through-holes on the influencing metal lines along the width direction;

[0008] Performing hole expansion processing on each of the connecting through holes in the width direction to form an enlarged connecting through hole, so that the size of the enlarged connecting through hole in the width direction is larger than the width of the interconnecting metal line, and the size in the extension direction remains unchanged; the size expansion amount of the connecting through hole in the width direction is determined according to the current photolithography process window;

[0009] Each of the affected metal line segments is translated in the direction away from the interconnection metal line by a certain distance in the width direction, and the moving distance is equal to the size expansion amount of the connecting through hole in the width direction, so as to form a pre-processed metal line and through hole layout;

[0010] Optical proximity correction is performed on the pre-processed metal line and through-hole layout to obtain a corrected metal line and through-hole layout.

[0011] The embodiment of the present application also provides an optical proximity effect correction device for metal line and via layout, comprising:

[0012] an acquisition module, for acquiring an original metal line and through-hole layout, wherein the original metal line and through-hole layout comprises at least two layers of metal line layers and a layer of square through-holes connecting metal lines respectively located in different layers, wherein the metal line layer comprises interconnection metal lines, wherein the interconnection metal lines are connected to connection through-holes; within the plane of the layer where the interconnection metal lines are located, a direction perpendicular to an extension direction of the interconnection metal lines is a width direction, a projection of the connection through-holes on a horizontal plane is within a projection of the interconnection metal lines on a horizontal plane, and a size of the connection through-holes in the width direction is equal to a width of the interconnection metal lines; a metal line in the metal line layer adjacent to the interconnection metal lines in the width direction is an influencing metal line, wherein the influencing metal line comprises an influencing metal line segment, wherein the influencing metal line segment is a line segment of a projection area of ​​the connection through-holes on the influencing metal lines along the width direction;

[0013] a hole expansion module, configured to expand each of the connecting through holes in the width direction to form an expanded connecting through hole according to the original metal line and through hole layout transmitted by the acquisition module, so that the size of the expanded connecting through hole in the width direction is larger than the width of the interconnecting metal line, and the size in the extension direction remains unchanged; the size expansion amount of the connecting through hole in the width direction is determined according to the current photolithography process window;

[0014] A line shifting module, configured to shift each of the affected metal line segments in the direction away from the interconnected metal line by a certain distance in the width direction according to the original metal line and through-hole layout transmitted by the acquisition module and the size expansion amount of the connecting through-hole in the width direction transmitted by the hole expansion module, wherein the shifting distance is equal to the size expansion amount of the connecting through-hole in the width direction, so as to form a pre-processed metal line and through-hole layout;

[0015] The optical proximity correction module is used to perform optical proximity correction on the pre-processed metal line and through-hole layout transmitted by the line shifting module to obtain a corrected metal line and through-hole layout.

[0016] An embodiment of the present application further provides a computer-readable storage medium storing a computer program, wherein the computer program is suitable for being loaded by a processor to execute the optical proximity effect correction method for the above-mentioned metal line and through-hole layout.

[0017] The beneficial effects of the present application are as follows: the optical proximity effect correction method of the metal line and through-hole layout provided by the present application first finds the connecting through-holes connecting the metal lines located in different layers respectively and the interconnecting metal lines, influencing metal lines and influencing metal line segments corresponding to the connecting through-holes from the original metal line and through-hole layout, wherein the interconnecting metal line is the metal line connected to the connecting through-hole, the influencing metal line is the metal line adjacent to the interconnecting metal line in the width direction, the width direction is the direction perpendicular to the extension direction of the interconnecting metal line in the plane of the layer where the interconnecting metal line is located, and the influencing metal line segment is the projection area line segment of the connecting through-hole on the influencing metal line along the width direction, then the connecting through-hole is expanded in the width direction to form an enlarged connecting through-hole, and the influencing metal line segment is translated a certain distance in the width direction in a direction away from the interconnecting metal line, and the moving distance It is equal to the size expansion of the connecting through hole in the width direction. In this way, the enlargement of the connecting through hole can increase the photolithography process window of the interconnected metal wire and the connecting through hole, and the movement of the affected metal wire segment can make the interconnected metal wire less likely to have Bridge defects with the adjacent metal wires, and the limited movement of the affected metal wire segment can make the affected metal wire less likely to have defects such as Necking and disconnection, thereby ensuring that the subsequent use of the optical critical correction method to correct the enlarged connecting through hole and the moved interconnected metal wire can further enlarge the photolithography process window of the interconnected metal wire and the connecting through hole on the basis of satisfying the circuit conduction, thereby improving the process feasibility of the interconnected metal wire and the connecting through hole, improving the product yield, and reducing the technical node of the interconnected metal wire (for example, to around 25nm), thereby improving the product competitiveness. In addition, the optical proximity effect correction method for the metal wire and through hole layout provided in the present application is universal for the metal wire and through hole layout, and its application prospects are broad. BRIEF DESCRIPTION OF THE DRAWINGS

[0018] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the drawings required for use in the description of the embodiments will be briefly introduced below. Obviously, the drawings described below are only some embodiments of the present application. For those skilled in the art, other drawings can be obtained based on these drawings without creative work.

[0019] Figure 1 It is a schematic flow chart of a method for correcting the optical proximity effect of metal line and via layout provided in an embodiment of the present application;

[0020] Figure 2 is a schematic cross-sectional structure diagram of the original metal line and through-hole layout provided in an embodiment of the present application;

[0021] Figure 3 yes Figure 2 A schematic diagram of the top view of the structure of the middle square via layer and the second metal line layer;

[0022] Figure 4 yes Figure 2 A schematic diagram of the structure of the first metal line layer and the square through-hole layer viewed from above;

[0023] Figure 5 is a schematic diagram of a top view of the structure after the connecting through hole is expanded according to an embodiment of the present application;

[0024] Figure 6 It is a schematic diagram of a top view structure after the affected metal line segment is translated, provided in an embodiment of the present application;

[0025] Figure 7 is another cross-sectional structural schematic diagram of the original metal line and through-hole layout provided in an embodiment of the present application;

[0026] Figure 8 yes Figure 7 A schematic diagram of a top view structure of a first square via layer, a second metal line layer, and a second square via layer;

[0027] Fig. 9 is another schematic diagram of a top view of the structure after the connecting through hole is expanded according to an embodiment of the present application;

[0028] Fig.10 is another schematic diagram of a top view of the structure after the metal line segment is translated according to an embodiment of the present application;

[0029] Fig.11 It is a schematic diagram of the structure of an optical proximity effect correction device for metal line and through-hole layout provided in an embodiment of the present application. DETAILED DESCRIPTION

[0030] The following will be combined with the drawings in the embodiments of the present application to clearly and completely describe the technical solutions in the embodiments of the present application. Obviously, the described embodiments are only part of the embodiments of the present application, not all of the embodiments. Based on the embodiments in the present application, all other embodiments obtained by those skilled in the art without creative work are within the scope of protection of this application.

[0031] In the following description, the specific embodiments of the present application will be described with reference to the steps and symbols performed by one or more computers, unless otherwise specified. Therefore, these steps and operations will be mentioned several times as being performed by a computer, and the computer execution referred to herein includes the operation of a computer processing unit by an electronic signal representing data in a structured form. This operation converts the data or maintains it at a location in the memory system of the computer, which can be reconfigured or otherwise change the operation of the computer in a manner familiar to testers in the field. The data structure maintained by the data is a physical location in the memory, which has specific characteristics defined by the data format. However, the principles of the present application are described in the above text, which does not represent a limitation, and testers in the field will understand that the various steps and operations described below can also be implemented in hardware.

[0032] The terms "module" or "unit" used herein may be considered as software objects executed on the computing system. The different components, modules, engines and services described herein may be considered as implementation objects on the computing system. The devices and methods described herein are preferably implemented in software, but may also be implemented in hardware, all within the scope of protection of this application.

[0033] In the following description of the present application, reference is made to “some embodiments”, which describe a subset of all possible embodiments, but it can be understood that “some embodiments” may be the same subset or different subsets of all possible embodiments and may be combined with each other without conflict.

[0034] In the following description of the present application, the terms "first\second\third" involved are merely used to distinguish similar objects and do not represent a specific ordering of the objects. It can be understood that "first\second\third" can be interchanged with a specific order or sequence where permitted, so that the embodiments of the present application described here can be implemented in an order other than that illustrated or described here.

[0035] In addition, the directional terms mentioned in this application, such as [up], [down], [front], [back], [left], [right], [inside], [outside], [side], etc., are only referenced to the directions of the attached drawings. Therefore, the directional terms used are used to illustrate and understand the present application, rather than to limit the present application. In each of the drawings, units with similar structures are represented by the same figure numbers. For clarity, the various parts in the drawings are not drawn to scale. In addition, certain well-known parts may not be shown in the drawings.

[0036] Unless otherwise defined, all technical and scientific terms used herein have the same meaning as those commonly understood by those skilled in the art to which this application belongs. The terms used herein are only for the purpose of describing the embodiments of this application and are not intended to limit this application.

[0037] The embodiment of the present application provides a method for correcting the optical proximity effect of a metal line and a through-hole layout. First, a connecting through-hole connecting metal lines located in different layers and an interconnecting metal line, an influencing metal line and an influencing metal line segment corresponding to the connecting through-hole are found from the original metal line and through-hole layout. The interconnecting metal line is a metal line connected to the connecting through-hole, the influencing metal line is a metal line adjacent to the interconnecting metal line in a width direction, the width direction is a direction perpendicular to the extension direction of the interconnecting metal line in the plane of the layer where the interconnecting metal line is located, and the influencing metal line segment is a line segment of a projection area of ​​the connecting through-hole on the influencing metal line along the width direction. Then, the connecting through-hole is expanded in the width direction. The hole processing forms an enlarged connecting through hole to increase the lithography process window of the interconnected metal line and the connecting through hole, and the affected metal line segment is translated a certain distance in the width direction away from the interconnected metal line, and the moving distance is equal to the size expansion of the connecting through hole in the width direction, so as to reduce the occurrence of Bridge defects between the interconnected metal line and its adjacent metal line, and at the same time reduce the occurrence of defects such as Necking and disconnection of the affected metal line segment due to excessive movement of the affected metal line segment. Afterwards, the optical critical correction method is used to correct the enlarged connecting through hole and the moved interconnected metal line to enlarge the lithography process window on the basis of satisfying the circuit conduction.

[0038] Compared with the optical proximity effect correction method of the related metal line and through-hole layout, the through-hole is first enlarged as a whole, the interconnected metal line is reduced, and then the OPC model is used to correct the enlarged through-hole and the reduced interconnected metal line, so that the photolithography process window is enlarged on the basis of satisfying the circuit conduction. In this way, the enlargement of adjacent through-holes is prone to produce through-hole bridge defects, and the reduction of interconnected metal lines is prone to electromigration and local thinning (necking) defects of interconnected metal lines. In addition, affected by processes such as etching and chemical mechanical polishing (CMP), the risk of disconnection of interconnected metal lines increases. ; The embodiment of the present application enlarges the through hole and moves the related affected metal line segments appropriately, and does not shrink the interconnecting metal line. Therefore, it can not only increase the lithography process window of the interconnecting metal line and the through hole, but also reduce the occurrence of Bridge defects in the interconnecting metal line. Moreover, since the shrinking of the interconnecting metal line is avoided, the problem of local thinning (necking) defects caused by electromigration of the interconnecting metal line after shrinking can be avoided, and the problem of short circuit caused by etching, chemical mechanical polishing (CMP) and other processes after shrinking the interconnecting metal line can be avoided, which is beneficial to improving product yield.

[0039] Compared with the related method of merging adjacent through holes to increase the size of the through hole to solve the problem of too small a photolithography process window in subsequent conventional OPC correction, the implementation of this solution requires that the original metal line and through hole layout meet the prerequisites (i.e., there are two through holes, the two through holes belong to the same layer and are close to each other; the functions of the devices to which the two through holes belong are consistent, and will not affect the interconnection circuit). These prerequisites limit the use of this solution and have poor versatility for metal line and through hole layouts. The optical proximity effect correction method for the metal line and through hole layout of the embodiment of the present application can not only solve the problem of too small a photolithography process window in conventional OPC correction, but also has good versatility for metal line and through hole layouts, and has broad application prospects.

[0040] The following is a detailed description with reference to specific embodiments. It should be noted that the serial numbers of the following embodiments are not intended to limit the preferred order of the embodiments.

[0041] See also Figure 1 , Figure 1 It is a flow chart of the optical proximity effect correction method for metal line and via layout provided in an embodiment of the present application. The method can be executed by an optical proximity effect correction device for metal line and through hole layout, and can be applied to the scene of optical proximity correction of the original metal line and through hole layout (i.e., the metal line and through hole layout that needs to correct the optical proximity effect, that is, the designed metal line and through hole layout obtained after the actual preparation process), first find the connecting through holes connecting the metal lines located in different layers and the interconnecting metal lines, influencing metal lines and influencing metal line segments corresponding to the connecting through holes from the original metal line and through hole layout, then expand the connecting through holes, and move the corresponding influencing metal line segments appropriately to form a pre-processed metal line and through hole layout, and then use a conventional optical critical correction method to correct the pre-processed metal line and through hole layout to obtain a corrected metal line and through hole layout, and the corrected metal line and through hole layout can be used to make the corresponding metal line and through hole mask, and the metal line and through hole patterns in the corrected metal line and through hole layout are consistent with the metal line and through hole patterns on the corresponding metal line and through hole mask. The specific process of the method can be as follows:

[0042] S101. Obtain an original metal line and via layout, the original metal line and via layout including at least two layers of metal line layers and a square via layer connecting metal lines located in different layers, the metal line layer including interconnected metal lines, the interconnected metal lines are connected to the connecting vias; within the plane of the layer where the interconnected metal lines are located, the direction perpendicular to the extension direction of the interconnected metal lines is the width direction, the projection of the connecting vias on the horizontal plane is within the projection of the interconnected metal lines on the horizontal plane, and the size of the connecting vias in the width direction is equal to the width of the interconnected metal lines; the metal lines in the metal line layer adjacent to the interconnected metal lines in the width direction are influencing metal lines, the influencing metal lines include influencing metal line segments, and the influencing metal line segments are line segments of the projection area of ​​the connecting vias along the width direction on the influencing metal lines.

[0043] In this embodiment, in the original metal line and through-hole layout, each metal line layer may include at least one metal line, the number of square through-hole layers may be one or more layers, each square through-hole layer may include at least one square through-hole, and the cross-section of the square through-hole may be a square or a rectangle.

[0044] Specifically, in the original metal line and via layout, the number of connecting vias can be one or more, and the connecting vias belong to a square via layer, and each connecting via is specifically a square via in the square via layer that connects metal lines located in different layers.

[0045] Specifically, in the original metal line and via layout, for each connecting via, the metal line connected to the connecting via in each metal line layer is the interconnecting metal line corresponding to the connecting via; within the plane of the layer where the interconnecting metal line corresponding to the connecting via is located, the direction perpendicular to the extension direction of the interconnecting metal line corresponding to the connecting via is the width direction corresponding to the connecting via; the projection of the connecting via on the horizontal plane is located within the projection of the interconnecting metal line corresponding to the connecting via on the horizontal plane, and the size of the connecting via in its corresponding width direction is equal to the width of its corresponding interconnecting metal line; the metal line adjacent to the interconnecting metal line corresponding to the connecting via in each metal line layer in the width direction corresponding to the connecting via is the influencing metal line corresponding to the connecting via; the line segment of the projection area of ​​the connecting via along its corresponding width direction on its corresponding influencing metal line is the influencing metal line segment corresponding to the connecting via.

[0046] Furthermore, in a specific implementation, after obtaining the original metal line and through-hole layout, all connecting through-holes and the interconnecting metal lines, width directions, influencing metal lines and influencing metal line segments corresponding to each connecting through-hole can be found from the obtained original metal line and through-hole layout, so as to facilitate subsequent relevant processing of the obtained original metal line and through-hole layout.

[0047] And, for ease of understanding, the following Figure 2 The original metal line and through hole layout 20 shown in FIG. Figure 2 As shown, the original metal line and via layout 20 may include two metal line layers (i.e., a first metal line layer 21 and a second metal line layer 23) and a square via layer (i.e., a first square via layer 22) for connecting the metal line 211 in the first metal line layer 21 with the metal line 231 in the second metal line layer 23. The first square via layer 22 includes three connecting vias (i.e., connecting via 221A, connecting via 221B, and connecting via 221C), each of which is used to connect the metal line 211 in the first metal line layer 21 with the metal line 231 in the second metal line layer 23.

[0048] Furthermore, if Figure 3 As shown, from the top view of the first square via layer 22 and the second metal wire layer 23, it can be seen that the second metal wire layer 23 includes three metal wires 231 (i.e., the first metal wire 231A, the second metal wire 231B, and the third metal wire 231C). In addition, in the second metal wire layer 23, the interconnecting metal wire corresponding to the connecting via 221A is the metal wire 231B, and the corresponding width direction is Figure 3 In the direction parallel to the Y axis, there are two corresponding affected metal lines, namely, metal line 231A and metal line 231C, and there are two corresponding affected metal line segments, namely, metal line segment A1 included in metal line 231A and metal line segment C1 included in metal line 231C; the interconnected metal line corresponding to the connecting through hole 221B is metal line 231B, and the corresponding width direction is Figure 3 In the direction parallel to the Y axis, there are two corresponding affected metal lines, namely, metal line 231A and metal line 231C, and there are two corresponding affected metal line segments, namely, metal line segment A2 included in metal line 231A and metal line segment C2 included in metal line 231C; the interconnected metal line corresponding to the connecting through hole 221C is metal line 231B, and the corresponding width direction is Figure 3 In the direction parallel to the Y axis, there are two corresponding affected metal wires, namely metal wire 231A and metal wire 231C, and there are two corresponding affected metal wire segments, namely metal wire segment A3 included in metal wire 231A and metal wire segment C3 included in metal wire 231C.

[0049] Furthermore, if Figure 4As shown, when observing the first metal wire layer 21 and the first square via layer 22 from a bottom-up perspective, it can be seen that the first metal wire layer 21 includes three metal wires 211 (i.e., a first metal wire 211A, a second metal wire 211B, and a third metal wire 211C). In addition, in the first metal wire layer 21, the interconnecting metal wire corresponding to the connecting via 221A is the metal wire 211B, and the corresponding width direction is Figure 4 In the direction parallel to the Y axis, there are two corresponding affected metal lines, namely, metal line 211A and metal line 211C, and there are two corresponding affected metal line segments, namely, metal line segment A11 included in metal line 211A and metal line segment C11 included in metal line 211C; the interconnected metal line corresponding to the connecting through hole 221B is metal line 211B, and the corresponding width direction is Figure 4 In the direction parallel to the Y axis, there are two corresponding affected metal lines, namely metal line 211A and metal line 211C, and there are two corresponding affected metal line segments, namely metal line segment A12 included in metal line 211A and metal line segment C12 included in metal line 211C; the interconnected metal line corresponding to the connecting through hole 221C is metal line 211B, and the corresponding width direction is Figure 4 In the direction parallel to the Y axis, there are two corresponding affected metal wires, namely, metal wire 211A and metal wire 211C, and there are two corresponding affected metal wire segments, namely, metal wire segment A13 included in metal wire 211A and metal wire segment C13 included in metal wire 211C.

[0050] Furthermore, it should be noted that if Figure 4 As shown, in this embodiment, each connecting through hole (for example, connecting through hole 221A, connecting through hole 221B and connecting through hole 221C) is on a horizontal plane (ie, with Figure 4 The projection of the connecting via 221A, the connecting via 221B and the connecting via 221C on the plane parallel to the X-axis and the Y-axis in the figure is located within the projection of the corresponding interconnection metal line 211B on the horizontal plane, and each connecting via (for example, the connecting via 221A, the connecting via 221B and the connecting via 221C) .... Figure 4 The dimension in the direction parallel to the Y-axis is equal to the width of the corresponding interconnection metal line 211B. While controlling the dimension of the connection hole in the width direction to be smaller, the contact area between the designed metal connection plug filled in the connection hole and the interconnection metal line is maximized, thereby achieving better interconnection performance.

[0051] Understandably, Figure 2 This is not a complete display of the metal line layer and the square through hole layer included in the original metal line and through hole layout, but only a part thereof, which is sufficient to achieve the purpose of displaying this application. Of course, the original metal line and through hole layout may also include only Figure 2 Metal line layers and square via layers shown.

[0052] In some embodiments, in the original metal wire and through-hole layout, for each metal wire layer, all metal wires included in the metal wire layer may be arranged in a regular manner, for example, all metal wires included in the metal wire layer are arranged in a periodic pattern as a whole. Specifically, all metal wires included in the metal wire layer may have only two extension directions, namely, a horizontal direction and a vertical direction, wherein the horizontal direction and the vertical direction are parallel to the metal wire layer, and the horizontal direction is perpendicular to the vertical direction; or, all metal wires included in the metal wire layer may be arranged in an irregular manner, for example, all metal wires included in the metal wire layer are in a disordered state as a whole. Specifically, all metal wires included in the metal wire layer have multiple extension directions and no regularity.

[0053] In some embodiments, in the original metal line and via layout, for each metal line layer, all metal line patterns included in the metal line layer can be designed to be transferred through one or more photolithography processes. And it can be understood that by designing all metal line patterns included in the metal line layer to be transferred through multiple photolithography processes, the metal line layer can be suitable for Multi-Patterning technology.

[0054] S102. Each connecting through hole is enlarged in the width direction to form an enlarged connecting through hole, so that the size of the enlarged connecting through hole in the width direction is larger than the width of the interconnecting metal line, and the size in the extension direction remains unchanged; the amount of size expansion of the connecting through hole in the width direction is determined according to the current lithography process window.

[0055] Specifically, in the original metal line and via layout, for each connection via, the connection via can be expanded in the corresponding width direction to form a corresponding expanded connection via, and the size of the expanded connection via corresponding to the connection via in the corresponding width direction of the connection via is greater than the width of the interconnection metal line corresponding to the connection via, and the size of the expanded connection via corresponding to the connection via in the extension direction of the interconnection metal line corresponding to the connection via is equal to the size of the connection via in the extension direction of the interconnection metal line corresponding to the connection via. In other words, the expansion of the connection via only increases the size of the connection via in the corresponding width direction, and does not change the size of the connection via in the extension direction of the interconnection metal line corresponding to the connection via.

[0056] Furthermore, the inventor of the present application has found that increasing the size of the connecting via in the extension direction of the corresponding interconnecting metal line has no significant effect on increasing the photolithography process window of the connecting via and the interconnecting metal line, and will cause the enlarged connecting via to be too large, resulting in waste of filling materials, and making the enlarged connecting via easy to bridge. Therefore, in this embodiment, by only increasing the size of the connecting via in the corresponding width direction, while keeping the size of the connecting via in the extension direction of the corresponding interconnecting metal line unchanged, it is possible to increase the photolithography process window of the connecting via and the interconnecting metal line, and reduce the difficulty of hole expansion processing for the connecting via, and avoid waste of filling materials caused by the enlarged connecting via being too large, and reduce the risk of bridging of the enlarged connecting via.

[0057] Specifically, for each connecting via, the dimension of the connecting via in its corresponding width direction can be specifically one of the width and length of the connecting via, and the dimension of the connecting via in the extension direction of its corresponding interconnecting metal line can be specifically the other of the width and length of the connecting via.

[0058] In this embodiment, for each connecting through hole, the difference between the size of the enlarged connecting through hole corresponding to the connecting through hole in the corresponding width direction and the size of the connecting through hole in the corresponding width direction is equal to the size expansion amount of the connecting through hole in the corresponding width direction, and the size expansion amount of the connecting through hole in the corresponding width direction is determined according to the current lithography process window.

[0059] It is understandable that in the photolithography process, the process window is an extremely important standard for measuring the level of photolithography, and relevant R&D personnel are always committed to optimizing the process window to obtain a larger process window. The process window can refer to the exposure dose and defocus range that ensures that the mask pattern can be correctly transferred to the silicon wafer, and can include three aspects of information: imaging accuracy, exposure and depth of focus.

[0060] Specifically, the current photolithography process window in this embodiment may refer to: the exposure dose and defocus range that ensures that the metal line and via pattern included in the original metal line and via layout can be correctly transferred to the silicon wafer. In addition, the size expansion amount of the connecting via in the corresponding width direction in this embodiment is determined according to the current photolithography process window, which may refer to: the size expansion amount of the connecting via in the corresponding width direction should be sufficient to enable the corresponding enlarged connecting via to be correctly transferred to the silicon wafer under the current photolithography process window, that is, no defects such as bridging or overlapping will occur.

[0061] Furthermore, in a specific implementation, the size expansion amount of the connecting via in the corresponding width direction may be less than or equal to the alignment margin. The alignment margin refers to: the maximum allowable offset when transferring the metal wire layer of the upper layer of the layer where the connecting via is located through the photolithography process. It can be understood that the upper layer of the metal wire layer can be correctly transferred only when the offset when the through-hole photolithography process transfers the metal wire layer of the upper layer of the layer where the connecting via is located is not greater than the maximum allowable offset, and when the offset when the through-hole photolithography process transfers the metal wire layer of the upper layer of the layer where the connecting via is located is greater than the maximum allowable offset, the upper layer of the metal wire layer cannot be correctly transferred.

[0062] In some embodiments, for each connecting via, the ratio of the size expansion amount of the connecting via in the corresponding width direction to the size of the connecting via in the corresponding width direction may be α, 0.5≤α≤0.75. For example, α may be equal to 0.5, 0.55, 0.6, 0.65, 0.7 or 0.75, etc. In this way, it is possible to ensure that the size expansion amount of the connecting via 221 is relatively moderate, so as to increase the photolithography process window of the connecting via and the interconnecting metal line, while reducing the risk of bridging or overlapping of the interconnecting metal line under the increased photolithography process window.

[0063] In some specific embodiments, the above-mentioned hole expansion process for the connecting through hole in the width direction to form an enlarged connecting through hole can be specifically as follows: the connecting through hole is expanded by a first size expansion amount and a second size expansion amount respectively on both sides of the interconnecting metal line in the width direction, and the sum of the first size expansion amount and the second size expansion amount is equal to the size expansion amount of the connecting through hole.

[0064] Specifically, in the original metal line and through-hole layout, for each connecting through-hole, the connecting through-hole can be expanded by a first size expansion amount and a second size expansion amount in the corresponding width direction toward both sides of the corresponding interconnecting metal line, respectively, wherein the sum of the first size expansion amount and the second size expansion amount is equal to the size expansion amount of the connecting through-hole in the corresponding width direction, and the spacing distance between the two opposite sides of the enlarged connecting through-hole corresponding to the connecting through-hole along the corresponding width direction of the connecting through-hole and the connecting through-hole can be equal to the first size expansion amount and the second size expansion amount, respectively, and, in a specific implementation, the first size expansion amount and the second size expansion amount can be equal to achieve the same amplitude of outward edge expansion processing on the two opposite sides of the connecting through-hole along the corresponding width direction, thereby improving the electrical uniformity of the metal interconnection structure.

[0065] And, for ease of understanding, the following Figure 3 The three connecting vias (i.e., connecting via 221A, connecting via 221B, and connecting via 221C) in the original metal line and via layout 20 shown in FIG. Figure 3 and Figure 5 As shown, after the connecting through hole 221A is enlarged in its corresponding width direction, the connecting through hole 221A will become an enlarged connecting through hole 221A'; after the connecting through hole 221B is enlarged in its corresponding width direction, the connecting through hole 221B will become an enlarged connecting through hole 221B'; after the connecting through hole 221C is enlarged in its corresponding width direction, the connecting through hole 221C will become an enlarged connecting through hole 221C'.

[0066] S103. Each affected metal line segment is translated in the width direction away from the interconnected metal line by a certain distance, the moving distance being equal to the size expansion amount of the connecting through hole in the width direction, to form a pre-processed metal line and through hole layout.

[0067] Specifically, in the original metal line and via layout, for each connecting via, after the connecting via is expanded in the corresponding width direction to form the corresponding enlarged connecting via, the influencing metal line segment corresponding to the connecting via can be translated a certain distance in the corresponding width direction of the connecting via along the direction away from the interconnecting metal line corresponding to the connecting via, and the moving distance is equal to the spacing distance between the target side of the enlarged connecting via corresponding to the connecting via and the connecting via, and the target side is the side opposite to the influencing metal line segment corresponding to the connecting via in the corresponding width direction of the connecting via. In this way, after enlarging the connecting via to increase the photolithography process window of the interconnecting metal line and the connecting via, the influencing metal line segment is further moved a corresponding distance, which not only makes it difficult for the enlarged connecting via to overlap with the influencing metal line segment, but also makes it difficult for the interconnecting metal line to bridge the influencing metal line under the enlarged photolithography process window.

[0068] In some embodiments, in order to prevent the influence metal wire segment from being easily broken due to the movement of the influence metal wire segment, the maximum allowable movement distance of the influence metal wire segment during translation can be set to control the movement distance of the influence metal wire segment during translation to be less than or equal to the maximum allowable movement distance. For example, the maximum allowable movement distance of the influence metal wire segment can be less than or equal to 1 / 2 to 3 / 4 of the width of the influence metal wire segment.

[0069] In some embodiments, in the same metal line layer, there may be an influencing metal line on both sides of an interconnecting metal line, namely, a first influencing metal line and a second influencing metal line. Accordingly, the connecting via connected to the interconnecting metal line is expanded in the corresponding width direction, which may be specifically: the connecting via connected to the interconnecting metal line is expanded in the corresponding width direction toward the first influencing metal line and the second influencing metal line by a first size expansion amount and a second size expansion amount, respectively.

[0070] Correspondingly, the moving distance of the influencing metal wire segment of the first influencing metal wire can be a first moving distance, the moving distance of the influencing metal wire segment of the second influencing metal wire can be a second moving distance, and the first moving distance can be equal to the first size expansion amount of the connecting via connected to the interconnecting metal wire when the edge expansion processing is performed, and the second moving distance can be equal to the second size expansion amount of the connecting via connected to the interconnecting metal wire when the edge expansion processing is performed.

[0071] And, for ease of understanding, the following Figure 2 As an example, the second metal line layer 23 in the original metal line and via layout 20 shown in FIG. Figure 2 and Figure 3 As shown, in the second metal line layer 23, there may be an influencing metal line on both sides of the interconnection metal line 231B, namely, a first influencing metal line 231A and a second influencing metal line 231C. Figure 3 and Figure 5 , the connection through hole 221A connected to the interconnection metal line 231B can be expanded by the first size expansion amount and the second size expansion amount respectively in the corresponding width direction toward the first influencing metal line 231A and the second influencing metal line 231C to form an expanded connection through hole 221A'; the connection through hole 221B connected to the interconnection metal line 231B can be expanded by the first size expansion amount and the second size expansion amount respectively in the corresponding width direction toward the first influencing metal line 231A and the second influencing metal line 231C to form an expanded connection through hole 221B'; the connection through hole 221C connected to the interconnection metal line 231B can be expanded by the first size expansion amount and the second size expansion amount respectively in the corresponding width direction toward the first influencing metal line 231A and the second influencing metal line 231C to form an expanded connection through hole 221C'.

[0072] Then, if Figure 3 , Figure 5 and Figure 6As shown, the influenced metal line segment A1 included in the first influenced metal line segment 231A and corresponding to the connecting through hole 221A can be translated for a certain distance in the direction away from the interconnecting metal line 231B in the width direction corresponding to the connecting through hole 221A, and the moving distance of the influenced metal line segment A1 of the first influenced metal line 231A is equal to the first size expansion amount of the connecting through hole 221A when the edge expansion process is performed; the influenced metal line segment A2 included in the first influenced metal line segment 231A and corresponding to the connecting through hole 221B can be translated for a certain distance in the direction away from the interconnecting metal line 231B in the width direction corresponding to the connecting through hole 221B. The first influencing metal line segment 231A is translated in the direction of the metal line 231B by a certain distance, and the moving distance of the influencing metal line segment A2 is equal to the first size expansion amount of the connecting through hole 221B when the edge expansion process is performed; the influencing metal line segment A3 corresponding to the connecting through hole 221C included in the first influencing metal line segment 231A is translated in the direction away from the interconnecting metal line 231B by a certain distance in the width direction corresponding to the connecting through hole 221C, and the moving distance of the influencing metal line segment A3 of the first influencing metal line 231A is equal to the first size expansion amount of the connecting through hole 221C when the edge expansion process is performed. a large amount; the influenced metal line segment C1 included in the second influenced metal line segment 231C and corresponding to the connecting through hole 221A is translated by a certain distance in the width direction corresponding to the connecting through hole 221A in the direction away from the interconnecting metal line 231B, and the moving distance of the influenced metal line segment C1 of the second influenced metal line 231C is equal to the second size expansion amount of the connecting through hole 221A when the edge expansion process is performed; the influenced metal line segment C2 included in the second influenced metal line segment 231C and corresponding to the connecting through hole 221B is translated by a certain distance in the width direction corresponding to the connecting through hole 221B in the direction away from the interconnecting metal line 2 The influencing metal wire segment C3 corresponding to the connecting through hole 221C included in the second influencing metal wire segment 231C is translated a certain distance in the direction of the connecting through hole 221C, and the moving distance of the influencing metal wire segment C2 of the second influencing metal wire 231C is equal to the second size expansion amount of the connecting through hole 221C when the edge expansion processing is performed; the influencing metal wire segment C3 corresponding to the connecting through hole 221C included in the second influencing metal wire segment 231C is translated a certain distance in the direction away from the interconnecting metal wire 231B in the width direction corresponding to the connecting through hole 221C, and the moving distance of the influencing metal wire segment C3 of the second influencing metal wire 231C is equal to the second size expansion amount of the connecting through hole 221C when the edge expansion processing is performed.

[0073] In some embodiments, in the same metal line layer, the upper surface and the upper surface of an interconnecting metal line can be connected to two connecting through holes (i.e., a first connecting through hole and a second connecting through hole) respectively. In addition, the projection of the first connecting through hole on the horizontal plane overlaps with the projection of the second connecting through hole on the horizontal plane. The size of the first connecting through hole in its corresponding width direction can be the same as the size of the second connecting through hole in its corresponding width direction, for example, it can be equal to the width of the interconnecting metal line. The size of the first connecting through hole in the extension direction of the interconnecting metal line can be smaller than the size of the second connecting through hole in the extension direction of the interconnecting metal line.

[0074] Furthermore, the first connecting through hole and the second connecting through hole are respectively expanded to form corresponding enlarged connecting through holes, which can be: the first connecting through hole is expanded in its corresponding width direction to form a first enlarged connecting through hole; the second connecting through hole is expanded in its corresponding width direction to form a second enlarged connecting through hole, and the size expansion of the first connecting through hole in its corresponding width direction is greater than the size expansion of the second connecting through hole in its corresponding width direction.

[0075] In some specific embodiments, the ratio of the size expansion amount of the second connection via during the edge expansion process to the size expansion amount of the first connection via during the edge expansion process may be β, 0.4≤β≤0.8. For example, β may be equal to 0.4, 0.45, 0.5, 0.55, 0.6, 0.65, 0.7, 0.75 or 0.8, etc. In this way, it can be ensured that the size expansion amounts of the first connection via and the second connection via, which respectively connect the upper surface and the lower surface of the same interconnection metal line, are both moderate.

[0076] In some specific embodiments, the upper surface and the lower surface of the interconnected metal line are respectively connected to the first connecting via and the second connecting via. Then, in the metal line layer where the interconnected metal line is located, the affected metal line segments corresponding to the first connecting via and the second connecting via may include a first-region affected metal line segment, a second-region affected metal line segment, and a third-region affected line segment, wherein the first-region affected metal line segment is an overlapping projection area line segment of the first connecting via and the second connecting via along the corresponding width direction on the corresponding affected metal line, and the second-region affected metal line segment is an overlapping projection area line segment of the first connecting via and the second connecting via along the corresponding width direction on the corresponding affected metal line. The projection area line segment on the metal line, the third area affects the metal line segment which is the projection area line segment of only the second connecting through hole along its corresponding width direction on the corresponding metal line; in other words, the first area affects the metal line segment which belongs to both the affected metal line segment corresponding to the first connecting through hole and the affected metal line segment corresponding to the second connecting through hole, the second area affects the metal line segment which belongs only to the affected metal line segment corresponding to the first connecting through hole, but not to the affected metal line segment corresponding to the second connecting through hole, and the third area affects the metal line segment which belongs only to the affected metal line segment corresponding to the second connecting through hole, but not to the affected metal line segment corresponding to the first connecting through hole.

[0077] Correspondingly, the affected metal wire segments corresponding to the first connecting through hole and the second connecting through hole are translated, which can be specifically as follows: the affected metal wire segments in the first region, the affected metal wire segments in the second region and the affected metal wire segments in the third region are translated a certain distance in the corresponding width direction (i.e., the direction perpendicular to the extension direction of the interconnected metal wires connected to the first connecting through hole and the second connecting through hole on the above-mentioned upper surface and lower surface respectively) in the direction away from the corresponding interconnected metal wires (i.e., the interconnected metal wires connected to the first connecting through hole and the second connecting through hole on the above-mentioned upper surface and lower surface respectively), and the moving distance of the affected metal wire segments in the first region is equal to the sum of the size expansion amount of the first connecting through hole when the edge expansion processing is performed and the size expansion amount of the second connecting through hole when the edge expansion processing is performed, the moving distance of the affected metal wire segments in the second region is equal to the size expansion amount of the first connecting through hole when the edge expansion processing is performed, and the moving distance of the affected metal wire segments in the third region is equal to the size expansion amount of the second connecting through hole when the edge expansion processing is performed.

[0078] Specifically, the first connecting via and the second connecting via are respectively expanded, which can be specifically as follows: the first connecting via is expanded by a first size expansion amount and a second size expansion amount in the corresponding width direction toward both sides (i.e., the first side and the second side) of the corresponding interconnecting metal line; the second connecting via is expanded by a first size expansion amount and a second size expansion amount in the corresponding width direction toward both sides of the corresponding interconnecting metal line. Accordingly, in the metal wire layer where the corresponding interconnecting metal line is located, for the affected metal wire segments corresponding to the first connecting via and the second connecting via, the first area of ​​the affected metal wire segments located on the first side of the corresponding interconnecting metal line has a moving distance equal to the sum of the first size expansion amount of the first connecting via and the first size expansion amount of the second connecting via when the expansion is performed; the first area of ​​the affected metal wire segments located on the second side of the corresponding interconnecting metal line has a moving distance equal to the sum of the second size expansion amount of the first connecting via and the second size expansion amount of the second connecting via when the expansion is performed; the first area of ​​the affected metal wire segments located on the second side of the corresponding interconnecting metal line has a moving distance equal to the sum of the second size expansion amount of the first connecting via and the second size expansion amount of the second connecting via when the expansion is performed; The second area on one side affects the moving distance of the metal wire segment when it is translated, which is equal to the first size expansion amount of the first connecting through hole when the edge expansion process is performed; the second area located on the second side of the corresponding interconnected metal line, which includes the moving distance of the metal wire segment when it is translated, which is equal to the second size expansion amount of the first connecting through hole when the edge expansion process is performed; the third area located on the first side of the corresponding interconnected metal line, which includes the moving distance of the metal wire segment when it is translated, which is equal to the first size expansion amount of the second connecting through hole when the edge expansion process is performed; the third area located on the second side of the corresponding interconnected metal line, which includes the moving distance of the metal wire segment when it is translated, which is equal to the second size expansion amount of the second connecting through hole when the edge expansion process is performed.

[0079] And, for ease of understanding, the following Figure 7 The original metal line and through hole layout 20 shown in FIG. Figure 7 The original metal line and via layout 20 shown can be understood as being Figure 2 Based on the original metal line and via layout 20 shown, another square via layer (i.e., second square via layer 24) is added. Figure 7 and Figure 8 As shown, in the original metal line and via layout 20, the upper surface of the interconnection metal line 231B included in the second metal line layer 23 is connected to the connection via 221B included in the first square via layer 22, and the lower surface is connected to the connection via 241 included in the second square via layer 24. Figure 8As shown, when observing the first square through hole layer 22, the second metal line layer 23 and the second square through hole layer 24 from a top view, it can be seen that the connecting through hole 221B is in a horizontal plane (ie, Figure 8 The projection of the connecting through hole 221B on the plane perpendicular to the Z-axis in the middle overlaps with the projection of the connecting through hole 241 on the horizontal plane, and the connecting through hole 221B and the connecting through hole 241 have the same size in the corresponding width direction (i.e., the direction perpendicular to the extension direction of the interconnection metal line 231B), and the size of the connecting through hole 221B in the extension direction of the interconnection metal line 231B is smaller than the size of the connecting through hole 241 in the extension direction of the interconnection metal line 231B.

[0080] Specifically, Figure 8 As shown, in the second metal line layer 23 where the interconnection metal line 231B is located, the affected metal line segments corresponding to the connection via 221B and the connection via 241 (i.e., the affected metal line segment A2, the affected metal line segment A4, the affected metal line segment C2, and the affected metal line segment C4) include the first regional affected metal line segment (i.e., the regional affected metal line segment A22 and the regional affected metal line segment C22) and the third regional affected metal line segment (i.e., the regional affected metal line segment A21, the regional affected metal line segment A23, the regional affected metal line segment C21, and the regional affected metal line segment C4). The regional influencing metal segment A22 does not include the second regional influencing segment, wherein the regional influencing metal segment A22 belongs to both the influencing metal segment A2 and the influencing metal segment A4, the regional influencing metal segment C22 belongs to both the influencing metal segment C2 and the influencing metal segment C4, the regional influencing metal segment A21, the regional influencing metal segment A23, the regional influencing metal segment C21 and the regional influencing metal segment C22 belong to the influencing metal segment A4, the influencing metal segment A4, the influencing metal segment C4 and the influencing metal segment C4 respectively.

[0081] Specifically, Figure 8 and Fig. 9 As shown, after the connecting through hole 221B is expanded in the corresponding width direction, the connecting through hole 221B will become an expanded connecting through hole 221B'; after the connecting through hole 241 is expanded in the corresponding width direction, the connecting through hole 241 will become an expanded connecting through hole 241'. In addition, the size expansion amount of the connecting through hole 221 when the edge expansion process is performed is greater than the size expansion amount of the connecting through hole 241 when the edge expansion process is performed. In other words, the size of the expanded connecting through hole 221B' in the width direction corresponding to the connecting through hole 221B is greater than the size of the expanded connecting through hole 241' in the width direction corresponding to the connecting through hole 241.

[0082] Then, if Figure 8 , Fig. 9 and Fig.10As shown, the first region-affecting metal line segment (i.e., the region-affecting metal line segment A22 and the region-affecting metal line segment C22) and the third region-affecting metal line segment (i.e., the region-affecting metal line segment A21, the region-affecting metal line segment A23, the region-affecting metal line segment C21, and the region-affecting metal line segment C22) can be respectively translated by a certain distance in the corresponding width direction (i.e., the direction perpendicular to the extending direction of the interconnection metal line 231B) in the direction away from the interconnection metal line 231B, and the region-affecting metal line segments A22 and The sum of the moving distances of the area-affected metal wire segment C22 is equal to the sum of the size expansion of the connecting through hole 221B when the edge expansion processing is performed and the size expansion of the connecting through hole 241 when the edge expansion processing is performed, the sum of the moving distances of the area-affected metal wire segment A21 and the area-affected metal wire segment C21 is equal to the size expansion of the connecting through hole 241 when the edge expansion processing is performed, and the sum of the moving distances of the area-affected metal wire segment A23 and the area-affected metal wire segment C23 is equal to the size expansion of the connecting through hole 241 when the edge expansion processing is performed.

[0083] S104. Perform optical proximity correction on the pre-processed metal line and through-hole layout to obtain a corrected metal line and through-hole layout.

[0084] Specifically, after obtaining the pre-processed metal line and via layout, an optical proximity correction method (for example, conventional optical proximity correction methods such as a model-based optical proximity correction method) can be used to correct the optical proximity effect of the pre-processed metal line and via layout, so as to enlarge the lithography process window while satisfying circuit conduction, thereby obtaining a corrected metal line and via layout.

[0085] Furthermore, it should be noted that, in the present embodiment, the connecting vias in the original metal lines and the through-hole layout are first enlarged, the related influencing metal line segments in the original metal lines and the through-hole layout are appropriately moved, and then the enlarged connecting vias and the moved interconnecting metal lines are corrected by a conventional optical critical correction method. In this way, the photolithography process window of the interconnecting metal lines and the connecting vias can be further enlarged on the basis of satisfying the circuit conduction, thereby improving the process feasibility of the interconnecting metal lines and the connecting vias, improving the product yield, and reducing the technical node of the interconnecting metal lines (for example, to around 25 nm), thereby improving the product competitiveness.

[0086] In some embodiments, after S104 above, that is, after obtaining the above-mentioned revised metal line and through-hole layout, a mask is prepared according to the metal line and through-hole patterns in the revised metal line and through-hole layout, and then the metal line and through-hole patterns are prepared on the wafer using photolithography technology to achieve the transfer of the designed original metal line and through-hole layout to the wafer.

[0087] As can be seen from the above, the optical proximity effect correction method for the metal line and through-hole layout provided in this embodiment first finds the connecting through-holes connecting the metal lines located in different layers respectively and the interconnecting metal lines, influencing metal lines and influencing metal line segments corresponding to the connecting through-holes from the original metal line and through-hole layout, wherein the interconnecting metal lines are metal lines connected to the connecting through-holes, the influencing metal lines are metal lines adjacent to the interconnecting metal lines in the width direction, the width direction is a direction perpendicular to the extension direction of the interconnecting metal lines in the plane of the layer where the interconnecting metal lines are located, and the influencing metal line segments are projected area line segments of the connecting through-holes on the influencing metal lines along the width direction, then the connecting through-holes are expanded in the width direction to form expanded connecting through-holes, and the influencing metal line segments are translated by a certain distance in the width direction in a direction away from the interconnecting metal lines, and make them The moving distance is equal to the amount of size expansion of the connecting through hole in the width direction. In this way, the enlargement of the connecting through hole can increase the photolithography process window of the interconnecting metal wire and the connecting through hole. The movement of the interconnecting metal wire can make the interconnecting metal wire less prone to Bridge defects, and the limited movement of the interconnecting metal wire can make the interconnecting metal wire less prone to defects such as Necking and disconnection, thereby ensuring that the subsequent use of the optical critical correction method to correct the enlarged connecting through hole and the moved interconnecting metal wire can further enlarge the photolithography process window of the interconnecting metal wire and the connecting through hole on the basis of satisfying the circuit conduction, thereby improving the process feasibility of the interconnecting metal wire and the connecting through hole, improving the product yield, and reducing the technical node of the interconnecting metal wire (for example, to around 25nm), thereby improving the competitiveness of the product. In addition, the optical proximity effect correction method for the metal wire and through hole layout provided in the present application is universal for the metal wire and through hole layout, and has a broad application prospect.

[0088] Based on the method described in the above embodiment, this embodiment will further describe the optical proximity effect correction device of the metal line and through hole layout to implement the method described in the above embodiment. Fig.11 , Fig.11 The optical proximity effect correction device for metal line and via layout provided by the embodiment of the present application is specifically described. Fig.11 , Fig.11 The optical proximity effect correction device for metal line and through-hole layout provided by the embodiment of the present application is specifically described, and the optical proximity effect correction device for metal line and through-hole layout includes: an acquisition module 401, a hole expansion module 402, a line shifting module 403 and an optical proximity correction module 404, wherein the acquisition module 401 is connected in communication with the hole expansion module 402, the hole expansion module 402 is connected in communication with the line shifting module 403, and the line shifting module 403 is connected in communication with the optical proximity correction module 404. Among them:

[0089] (1) Get module 401

[0090] The acquisition module 401 is used to acquire the original metal line and through-hole layout, wherein the original metal line and through-hole layout includes at least two layers of metal line layers and a square through-hole layer connecting metal lines located in different layers, wherein the metal line layer includes interconnected metal lines, and the interconnected metal lines are connected to the connecting through-holes; within the plane of the layer where the interconnected metal lines are located, the direction perpendicular to the extension direction of the interconnected metal lines is the width direction, the projection of the connecting through-holes on the horizontal plane is within the projection of the interconnected metal lines on the horizontal plane, and the size of the connecting through-holes in the width direction is equal to the width of the interconnected metal lines; the metal lines in the metal line layer that are adjacent to the interconnected metal lines in the width direction are the influencing metal lines, and the influencing metal lines include influencing metal line segments, and the influencing metal line segments are the line segments of the projection area of ​​the connecting through-holes on the influencing metal lines along the width direction.

[0091] Specifically, the ratio of the enlarged amount of the connecting through hole to the size of the connecting through hole in the width direction may be α, 0.5≤α≤0.75.

[0092] (2) Hole expansion module 402

[0093] The hole expansion module 402 is used to expand each connecting through hole in the width direction to form an enlarged connecting through hole according to the original metal line and through hole layout transmitted by the acquisition module 401, so that the size of the enlarged connecting through hole in the width direction is larger than the width of the interconnected metal line, and the size in the extension direction remains unchanged; the size expansion amount of the connecting through hole in the width direction is determined according to the current lithography process window.

[0094] (3) Line shifting module 403

[0095] The line shifting module 403 is used to translate each affected metal line segment in the direction away from the interconnected metal line by a certain distance in the width direction according to the original metal line and through-hole layout transmitted by the acquisition module 401 and the size expansion amount of the connecting through-hole in the width direction transmitted by the hole expansion module 402, and the moving distance is equal to the size expansion amount of the connecting through-hole in the width direction, so as to form a pre-processed metal line and through-hole layout.

[0096] In some embodiments, when the above-mentioned hole expansion module 302 expands the connecting through hole in the width direction to form an enlarged connecting through hole, it can specifically execute: expanding the connecting through hole in the width direction toward both sides of the interconnected metal line by a first size expansion amount and a second size expansion amount, respectively, and the sum of the first size expansion amount and the second size expansion amount is equal to the size expansion amount of the connecting through hole.

[0097] Specifically, the first size enlargement amount and the second size enlargement amount may be equal.

[0098] Specifically, there may be an influencing metal line on both sides of the interconnected metal line, namely a first influencing metal line and a second influencing metal line. The moving distance of the influencing metal line segment of the first influencing metal line is the first moving distance, and the moving distance of the influencing metal line segment of the second influencing metal line is the second moving distance. Furthermore, the first moving distance may be equal to the first size enlargement amount, and the second moving distance may be equal to the second size enlargement amount.

[0099] In some embodiments, the upper surface of the interconnecting metal line may be connected to the first connecting through hole, and the lower surface may be connected to the second connecting through hole. The projection of the first connecting through hole on the horizontal plane overlaps with the projection of the second connecting through hole on the horizontal plane, and the first connecting through hole and the second connecting through hole may have the same size in the width direction, and the size of the first connecting through hole in the extension direction may be smaller than the size of the second connecting through hole in the extension direction.

[0100] Specifically, when the hole enlarging module 402 performs hole enlarging processing on the connecting through hole in the width direction to form an enlarged connecting through hole, the following steps may be specifically performed:

[0101] The first connecting through hole is expanded in the width direction to form a first expanded connecting through hole, and the second connecting through hole is expanded in the width direction to form a second expanded connecting through hole, and the size expansion amount of the first connecting through hole is greater than the size expansion amount of the second connecting through hole.

[0102] Specifically, the influencing metal line segment may include a first area influencing metal line segment, a second area influencing metal line segment and a third area influencing line segment, wherein the first area influencing metal line segment is an overlapping projection area segment of the first connecting through hole and the second connecting through hole on the influencing metal line along the width direction, the second area influencing metal line segment is a projection area segment of only the first connecting through hole on the influencing metal line along the width direction, and the third area influencing metal line segment is a projection area segment of only the second connecting through hole on the influencing metal line along the width direction.

[0103] Accordingly, when the above-mentioned line shifting module 403 shifts the metal line segment in the width direction in a direction away from the interconnected metal line by a certain distance, it can specifically perform the following steps:

[0104] The metal wire segments affected by the first area, the metal wire segments affected by the second area and the metal wire segments affected by the third area are translated respectively, and the moving distance of the metal wire segments affected by the first area is equal to the sum of the size expansion amounts of the first connecting through hole and the size expansion amounts of the second connecting through hole, the moving distance of the metal wire segments affected by the second area is equal to the size expansion amount of the first connecting through hole, and the moving distance of the metal wire segments affected by the third area is equal to the size expansion amount of the second connecting through hole.

[0105] In some specific embodiments, a ratio of the enlarged amount of the second connection through hole to the enlarged amount of the first connection through hole may be β, 0.4≤β≤0.8.

[0106] (4) Optical proximity correction module 404

[0107] The optical proximity correction module 404 is used to perform optical proximity correction on the pre-processed metal line and through-hole layout transmitted by the line shifting module 403 to obtain a corrected metal line and through-hole layout.

[0108] In specific implementation, the above modules can be implemented as independent entities, or can be arbitrarily combined and implemented as the same or several entities. The specific implementation of the above modules can be found in the previous method embodiments, which will not be repeated here.

[0109] The embodiment of the present application further provides a computer-readable storage medium, which stores a computer program. The computer program is suitable for being loaded by a processor to execute the method described in the above embodiment.

[0110] A person of ordinary skill in the art will appreciate that all or part of the steps in the various methods of the above embodiments may be completed by instructions, or by controlling related hardware through instructions. The instructions may be stored in a computer-readable storage medium and loaded and executed by a processor.

[0111] To this end, the embodiment of the present application further provides a computer-readable storage medium, which stores a computer program, and the computer program can be loaded by a processor to execute the steps in any of the optical proximity effect correction methods for metal line and via layout provided in the embodiment of the present application. For example, the computer program can execute the following steps:

[0112] Obtaining an original metal line and through-hole layout, the original metal line and through-hole layout includes at least two layers of metal line layers and a square through-hole layer connecting metal lines located in different layers, the metal line layer includes interconnected metal lines, and the interconnected metal lines are connected to the connecting through-holes; in the plane of the layer where the interconnected metal lines are located, the direction perpendicular to the extension direction of the interconnected metal lines is the width direction, the projection of the connecting through-holes on the horizontal plane is within the projection of the interconnected metal lines on the horizontal plane, and the size of the connecting through-holes in the width direction is equal to the width of the interconnected metal lines; the metal lines in the metal line layer that are adjacent to the interconnected metal lines in the width direction are influencing metal lines, the influencing metal lines include influencing metal line segments, and the influencing metal line segments are line segments of the projection area of ​​the connecting through-holes on the influencing metal lines along the width direction;

[0113] Performing hole enlargement processing on each connecting through hole in the width direction to form an enlarged connecting through hole, so that the size of the enlarged connecting through hole in the width direction is greater than the width of the interconnecting metal line, and the size in the extension direction remains unchanged; the size enlargement amount of the connecting through hole in the width direction is determined according to the current photolithography process window;

[0114] Each affected metal line segment is translated in a certain distance in the width direction in a direction away from the interconnected metal line, and the moving distance is equal to the size expansion amount of the connecting through hole in the width direction, so as to form a pre-processed metal line and through hole layout;

[0115] Optical proximity correction is performed on the pre-processed metal line and through-hole layout to obtain a corrected metal line and through-hole layout.

[0116] The specific implementation of the above operations can be found in the previous embodiments, which will not be described in detail here.

[0117] The computer-readable storage medium may include: a read-only memory (ROM), a random access memory (RAM), a magnetic disk or an optical disk, etc.

[0118] Since the computer program stored in the computer-readable storage medium can execute the steps in any method for correcting the optical proximity effect of the metal line and via layout provided in the embodiments of the present application, the beneficial effects that can be achieved by any method for correcting the optical proximity effect of the metal line and via layout provided in the embodiments of the present application can be achieved. Please refer to the previous embodiments for details and will not be repeated here.

[0119] The above is a detailed introduction to the optical proximity effect correction method, device and computer-readable storage medium for metal line and through-hole layout provided in the embodiments of the present application. Specific examples are used in this article to illustrate the principles and implementation methods of the present application. The description of the above embodiments is only used to help understand the method of the present application and its core idea. At the same time, for technical personnel in this field, according to the ideas of the present application, there will be changes in the specific implementation methods and application scopes. In summary, the content of this specification should not be understood as a limitation on the present application.

Claims

1. A method for correcting the optical proximity effect of metal line and via layout, characterized in that: include: Obtaining an original metal line and through-hole layout, the original metal line and through-hole layout comprising at least two layers of metal line layers and a square through-hole layer connecting metal lines respectively located in different layers, the metal line layer comprising interconnection metal lines, the interconnection metal lines being connected to connection through-holes; within the plane of the layer where the interconnection metal lines are located, the direction perpendicular to the extension direction of the interconnection metal lines is the width direction, the projection of the connection through-hole on the horizontal plane is within the projection of the interconnection metal lines on the horizontal plane, and the size of the connection through-hole in the width direction is equal to the width of the interconnection metal lines; the metal lines in the metal line layer adjacent to the interconnection metal lines in the width direction are influencing metal lines, the influencing metal lines include influencing metal line segments, and the influencing metal line segments are line segments of the projection area of ​​the connection through-holes on the influencing metal lines along the width direction; Performing hole expansion processing on each of the connecting through holes in the width direction to form an enlarged connecting through hole, so that the size of the enlarged connecting through hole in the width direction is larger than the width of the interconnecting metal line, and the size in the extension direction remains unchanged; the size expansion amount of the connecting through hole in the width direction is determined according to the current photolithography process window; Each of the affected metal line segments is translated in the direction away from the interconnection metal line by a certain distance in the width direction, and the moving distance is equal to the size expansion amount of the connecting through hole in the width direction, so as to form a pre-processed metal line and through hole layout; Optical proximity correction is performed on the pre-processed metal line and through-hole layout to obtain a corrected metal line and through-hole layout.

2. The method according to claim 1, characterized in that A ratio of the size expansion amount of the connecting through hole to the size of the connecting through hole in the width direction is α, and 0.5≤α≤0.

75.

3. The method according to claim 1, characterized in that The connecting through hole is expanded in the width direction to form an enlarged connecting through hole, specifically: The connecting via is enlarged by a first size enlargement amount and a second size enlargement amount respectively toward both sides of the interconnecting metal line in the width direction, and the sum of the first size enlargement amount and the second size enlargement amount is equal to the size enlargement amount of the connecting via.

4. The method according to claim 3, characterized in that: The first size enlargement amount is equal to the second size enlargement amount.

5. The method according to claim 3, characterized in that: There is one influencing metal line on both sides of the interconnecting metal line, namely a first influencing metal line and a second influencing metal line; The moving distance of the metal wire segment influenced by the first influencing metal wire is a first moving distance, and the moving distance of the metal wire segment influenced by the second influencing metal wire is a second moving distance; The first moving distance is equal to the first size expansion amount, and the second moving distance is equal to the second size expansion amount.

6. The method according to claim 1, characterized in that The upper surface of the interconnecting metal line is connected to the first connecting through hole, and the lower surface is connected to the second connecting through hole; the projection of the first connecting through hole on the horizontal plane overlaps with the projection of the second connecting through hole on the horizontal plane, and the first connecting through hole and the second connecting through hole have the same size in the width direction, and the size of the first connecting through hole in the extension direction is smaller than the size of the second connecting through hole in the extension direction; The connecting through hole is expanded in the width direction to form an enlarged connecting through hole, specifically: the first connecting through hole is expanded in the width direction to form a first enlarged connecting through hole, and the second connecting through hole is expanded in the width direction to form a second enlarged connecting through hole; the size expansion amount of the first connecting through hole is greater than the size expansion amount of the second connecting through hole; The affected metal line segment includes a first area affected metal line segment, a second area affected metal line segment and a third area affected line segment, the first area affected metal line segment is an overlapping projection area line segment of the first connecting through hole and the second connecting through hole on the affected metal line along the width direction, the second area affected metal line segment is a projection area line segment of only the first connecting through hole on the affected metal line along the width direction, and the third area affected metal line segment is a projection area line segment of only the second connecting through hole on the affected metal line along the width direction; The affected metal line segment is translated by a certain distance in the width direction in a direction away from the interconnected metal line, specifically: The metal wire segments affected by the first area, the metal wire segments affected by the second area and the metal wire segments affected by the third area are translated respectively; the moving distance of the metal wire segments affected by the first area is equal to the sum of the size expansion amounts of the first connecting through hole and the size expansion amounts of the second connecting through hole, the moving distance of the metal wire segments affected by the second area is equal to the size expansion amount of the first connecting through hole, and the moving distance of the metal wire segments affected by the third area is equal to the size expansion amount of the second connecting through hole.

7. The method according to claim 6, characterized in that A ratio of an enlarged amount of the second connecting through hole to an enlarged amount of the first connecting through hole is β, and 0.4≤β≤0.

8.

8. An optical proximity effect correction device for metal line and via layout, characterized in that: include: an acquisition module, for acquiring an original metal line and through-hole layout, wherein the original metal line and through-hole layout comprises at least two layers of metal line layers and a layer of square through-holes connecting metal lines respectively located in different layers, wherein the metal line layer comprises interconnection metal lines, wherein the interconnection metal lines are connected to connection through-holes; within the plane of the layer where the interconnection metal lines are located, a direction perpendicular to an extension direction of the interconnection metal lines is a width direction, a projection of the connection through-holes on a horizontal plane is within a projection of the interconnection metal lines on a horizontal plane, and a size of the connection through-holes in the width direction is equal to a width of the interconnection metal lines; a metal line in the metal line layer adjacent to the interconnection metal lines in the width direction is an influencing metal line, wherein the influencing metal line comprises an influencing metal line segment, wherein the influencing metal line segment is a line segment of a projection area of ​​the connection through-holes on the influencing metal lines along the width direction; a hole expansion module, configured to expand each of the connecting through holes in the width direction to form an expanded connecting through hole according to the original metal line and through hole layout transmitted by the acquisition module, so that the size of the expanded connecting through hole in the width direction is larger than the width of the interconnecting metal line, and the size in the extension direction remains unchanged; the size expansion amount of the connecting through hole in the width direction is determined according to the current photolithography process window; A line shifting module, configured to shift each of the affected metal line segments in the direction away from the interconnected metal line by a certain distance in the width direction according to the original metal line and through-hole layout transmitted by the acquisition module and the size expansion amount of the connecting through-hole in the width direction transmitted by the hole expansion module, wherein the shifting distance is equal to the size expansion amount of the connecting through-hole in the width direction, so as to form a pre-processed metal line and through-hole layout; The optical proximity correction module is used to perform optical proximity correction on the pre-processed metal line and through-hole layout transmitted by the line shifting module to obtain a corrected metal line and through-hole layout.

9. The device according to claim 8, characterized in that The upper surface of the interconnecting metal line is connected to the first connecting through hole, and the lower surface is connected to the second connecting through hole; the projection of the first connecting through hole on the horizontal plane overlaps with the projection of the second connecting through hole on the horizontal plane, and the first connecting through hole and the second connecting through hole have the same size in the width direction, and the size of the first connecting through hole in the extension direction is smaller than the size of the second connecting through hole in the extension direction; When the hole enlarging module performs hole enlarging processing on the connecting through hole in the width direction to form an enlarged connecting through hole, the following specifically executes: performing hole enlarging processing on the first connecting through hole in the width direction to form a first enlarged connecting through hole, and performing hole enlarging processing on the second connecting through hole in the width direction to form a second enlarged connecting through hole; the size enlargement amount of the first connecting through hole is greater than the size enlargement amount of the second connecting through hole; The affected metal line segment includes a first area affected metal line segment, a second area affected metal line segment and a third area affected line segment, the first area affected metal line segment is an overlapping projection area line segment of the first connecting through hole and the second connecting through hole on the affected metal line along the width direction, the second area affected metal line segment is a projection area line segment of only the first connecting through hole on the affected metal line along the width direction, and the third area affected metal line segment is a projection area line segment of only the second connecting through hole on the affected metal line along the width direction; When the line shifting module shifts the affected metal line segment by a certain distance in the width direction in a direction away from the interconnected metal line, the following is specifically performed: The metal wire segments affected by the first area, the metal wire segments affected by the second area and the metal wire segments affected by the third area are translated respectively; the moving distance of the metal wire segments affected by the first area is equal to the sum of the size expansion amounts of the first connecting through hole and the size expansion amounts of the second connecting through hole, the moving distance of the metal wire segments affected by the second area is equal to the size expansion amount of the first connecting through hole, and the moving distance of the metal wire segments affected by the third area is equal to the size expansion amount of the second connecting through hole.

10. A computer-readable storage medium, characterized in that: The computer-readable storage medium stores a computer program, and the computer program is suitable for being loaded by a processor to execute the method according to any one of claims 1 to 7.

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