Semiconductor heat dissipation device and semiconductor device

Abstract

The invention relates to the technical field of semiconductors, and discloses a semiconductor heat dissipation device and a semiconductor device.The semiconductor heat dissipation device comprises a thin film base material, semiconductor chips are arranged on a bearing face of the thin film base material in the first direction, and the first direction is the extension direction of the side edge of the bearing face; the resin protection layer is wound on the semiconductor chip and is connected with the side edge of the semiconductor chip and the bearing surface of the film substrate; the graphic cooling fin is connected to the side, away from the thin film base material, of the semiconductor chip and covers the semiconductor chip, the space between the graphic cooling fin and the semiconductor chip is filled with a bonding material layer, and the space among the graphic cooling fin, the resin protection layer and the thin film base material is further filled with the bonding material layer; in the first direction, the end portion of the semiconductor chip protrudes out of the bonding material layer, heat dissipation concave notches are formed in the two sides of the pattern cooling fin, and the end portion of the semiconductor chip is correspondingly arranged in the heat dissipation concave notches. The heat dissipation effect of the semiconductor chip is improved.

Description

Technical Field

[0001] The present application relates to the field of semiconductor technology, and in particular to a semiconductor heat dissipation device. Background Art

[0002] In semiconductor integrated circuits, as the performance of semiconductor chips improves, their heat generation also increases. As a means of heat dissipation, graphic heat sinks are usually attached to improve heat dissipation efficiency. However, in related technologies, once air enters the chip when it is attached to the graphic heat sink, there is no means to exhaust the air, so the air will accumulate between the chip and the graphic heat sink. The area where the air accumulates has gaps, resulting in the graphic heat sink being unable to fit tightly against the chip, reducing the contact area between the two, thereby reducing the heat dissipation efficiency, causing the chip temperature to rise and posing a risk of damage. This situation needs to be changed. Summary of the invention

[0003] In view of this, the present application provides a semiconductor heat dissipation device and a semiconductor device to improve the heat dissipation effect of the semiconductor chip.

[0004] To achieve the above objectives, according to the first aspect, the technical solution adopted is: A semiconductor heat dissipation device, comprising: A film substrate, used for carrying semiconductor chips having a first set thickness, and the semiconductor chips are arranged on a carrying surface of the film substrate along a first direction, wherein the first direction is an extension direction of a side edge of the carrying surface; A resin protective layer is disposed around the semiconductor chip and connects the side of the semiconductor chip and the supporting surface of the film substrate; A pattern heat sink connected to a side of the semiconductor chip away from the film substrate and covering the semiconductor chip, an adhesive material layer being filled between the pattern heat sink and the semiconductor chip, and the adhesive material layer further filling between the pattern heat sink, the resin protective layer and the film substrate; Among them, in the first direction, the end of the semiconductor chip protrudes from the adhesive material layer, and the two sides of the graphic heat sink and the adhesive material layer are provided with heat dissipation recesses, and the end of the semiconductor chip corresponds to the heat dissipation recess.

[0005] The present application is further configured as follows: in the first direction, the heat dissipation recess gap gradually expands from close to the semiconductor chip to away from the semiconductor chip.

[0006] The present application is further configured as follows: the adhesive material layer includes a first heat dissipation material portion and a second heat dissipation material portion, the first heat dissipation material portion is applied between the graphic heat sink and the semiconductor chip, and the second heat dissipation material portion is connected to the first heat dissipation material portion and is filled between the graphic heat sink, the resin protective layer and the film substrate.

[0007] The present application is further configured as follows: the forming material of the first heat dissipation material part includes liquid silver paste or colloidal thermal conductive adhesive; and the colloidal thermal conductive adhesive includes at least one of silver paste thermal conductive adhesive, graphene-based thermal conductive adhesive or ceramic filler thermal conductive adhesive.

[0008] The present application is further configured such that: in the second direction, the vertical projection of the first heat dissipation material portion and the vertical projection of the semiconductor chip are located on the same center line, and the vertical projection of the first heat dissipation material portion partially covers the vertical projection of the semiconductor chip, and the vertical projections of the first heat dissipation material portion and the second heat dissipation material portion are located within the coverage range of the vertical projection of the graphic heat sink, wherein the second direction is perpendicular to the supporting surface of the film substrate and the first direction.

[0009] The present application is further configured to: further include a transport tape for loading and transporting the graphic heat sink before the graphic heat sink is connected to the semiconductor chip; A plurality of the pattern heat sinks are arranged at intervals on the transport tape, and the adhesive material layer is connected between the pattern heat sinks and the transport tape.

[0010] The present application is further configured as follows: an adjustment groove is provided on the side of the transport tape facing the graphic heat sink, the first heat dissipation material portion of the adhesive material layer is connected to the graphic heat sink and is located in the adjustment groove, and the second heat dissipation material portion of the adhesive material layer is connected between the graphic heat sink and the transport tape and is arranged on both sides of the first heat dissipation material portion.

[0011] The present application is further configured as follows: it also includes a resin heat dissipation layer, which is coated on the semiconductor chip and the resin protective layer and wraps the semiconductor chip and the resin protective layer, the graphic heat sink is connected to the side of the resin heat dissipation layer away from the film substrate and the adhesive material layer is filled between the graphic heat sink and the resin heat dissipation layer.

[0012] The present application is further configured as follows: the semiconductor chip has a second set thickness that is smaller than the first set thickness; after the semiconductor chip is polished from the first set thickness to the second set thickness, the semiconductor chip has an integral plane on a side facing away from the film substrate; and the graphic heat sink is covered on the integral plane through the adhesive material layer.

[0013] According to the second aspect, the technical solution adopted is: A semiconductor device comprises the semiconductor heat dissipation device as described in any one of the above embodiments.

[0014] In summary, compared with the prior art, the present application discloses a semiconductor heat dissipation device and a semiconductor device, specifically, the semiconductor chips are arranged on the supporting surface of the film substrate along a first direction, the resin protective layer is wrapped around the semiconductor chips and connects the side of the semiconductor chip and the supporting surface of the film substrate, the pattern heat sink is connected to the side of the semiconductor chip away from the film substrate and covers the semiconductor chip, wherein an adhesive material layer is filled between the pattern heat sink and the semiconductor chip, and the adhesive material layer is further filled between the pattern heat sink, the resin protective layer and the film substrate, the end of the semiconductor chip in the first direction protrudes from the adhesive material layer, and heat dissipation recesses are opened on both sides of the pattern heat sink, and the end of the semiconductor chip corresponds to the heat dissipation recess, that is, through the above arrangement, the possible accumulation of an air layer between the two when the pattern heat sink is attached to the semiconductor chip is avoided, and a discharge channel is constructed for this air layer, thereby ensuring the close fit between the pattern heat sink and the semiconductor chip and improving the heat dissipation efficiency of the semiconductor chip. BRIEF DESCRIPTION OF THE DRAWINGS

[0015] In order to more clearly illustrate the technical solutions in the embodiments of the present application, the following briefly introduces the drawings required for use in the description of the embodiments. Obviously, the drawings described below are only some embodiments of the present application. For those skilled in the art, other drawings can be obtained based on these drawings without creative work.

[0016] Figure 1 It is a schematic diagram of the planar structure of a first semiconductor heat dissipation device according to an embodiment of the present application; Figure 2 is a schematic cross-sectional structural diagram of a first semiconductor heat dissipation device according to an embodiment of the present application; Figure 3 is a schematic diagram of the planar structure of a second semiconductor heat dissipation device according to an embodiment of the present application; Figure 4 is a schematic cross-sectional structural diagram of a second semiconductor heat dissipation device according to an embodiment of the present application; Figure 5 is a schematic diagram of the planar structure of a third semiconductor heat dissipation device according to an embodiment of the present application; Figure 6 It is a schematic diagram of the planar structure of the transport tape of an embodiment of the present application; Figure 7 is a schematic diagram of the cross-sectional structure of the transport tape of an embodiment of the present application; Figure 8 is a schematic cross-sectional structural diagram of a third semiconductor heat dissipation device according to an embodiment of the present application; Fig. 9 It is a schematic diagram of the cross-sectional structure of the fourth semiconductor heat dissipation device of an embodiment of the present application. DETAILED DESCRIPTION

[0017] Exemplary embodiments will be described in detail herein, examples of which are shown in the accompanying drawings. When the following description refers to the drawings, the same numbers in different drawings represent the same or similar elements unless otherwise indicated. The implementations described in the following exemplary embodiments do not represent all implementations consistent with the present application. Instead, they are merely examples of devices and methods consistent with some aspects of the present application as detailed in the appended claims.

[0018] It should be noted that, in this article, the terms "include", "comprises" or any other variants thereof are intended to cover non-exclusive inclusion, so that a process, method, article or device including a series of elements includes not only those elements, but also includes other elements not explicitly listed, or also includes elements inherent to such process, method, article or device. In the absence of further restrictions, an element defined by the sentence "includes a ..." does not exclude the existence of other identical elements in the process, method, article or device including the element. In addition, components, features, and elements with the same name in different embodiments of the present application may have the same meaning or different meanings, and their specific meanings need to be determined by their explanation in the specific embodiment or further combined with the context of the specific embodiment.

[0019] It should be further understood that the terms "comprising" and "including" indicate the presence of the described features, steps, operations, elements, components, items, kinds, and / or groups, but do not exclude the presence, occurrence or addition of one or more other features, steps, operations, elements, components, items, kinds, and / or groups. The terms "or", "and / or", "including at least one of the following", etc. used in this application may be interpreted as inclusive, or mean any one or any combination. For example, "including at least one of the following: A, B, C" means "any one of the following: A; B; C; A and B; A and C; B and C; A and B and C", and for another example, "A, B or C" or "A, B and / or C" means "any one of the following: A; B; C; A and B; A and C; B and C; A and B and C". Exceptions to this definition will only occur when the combination of elements, functions, steps or operations is inherently mutually exclusive in some way.

[0020] It should be understood that although the terms first, second, third, etc. may be used herein to describe various information, such information should not be limited to these terms. These terms are only used to distinguish information of the same type from each other. For example, without departing from the scope of this document, the first information may also be referred to as the second information, and similarly, the second information may also be referred to as the first information. Depending on the context, as used herein, the singular forms "a", "an", and "the" are intended to include the plural forms as well, unless otherwise indicated in the context.

[0021] It should be understood that the orientations or positional relationships indicated by terms such as "top", "bottom", "up", "down", "vertical", and "horizontal" are based on the orientations or positional relationships shown in the accompanying drawings and are only for the convenience of describing the present application and simplifying the description. They do not indicate or imply that the device referred to must have a specific orientation, be constructed and operated in a specific orientation, and therefore should not be understood as a limitation on the present application.

[0022] For ease of description, in the following embodiments, the orthogonal space formed by the horizontal plane and the vertical direction is used as an example for explanation, and this premise should not be understood as a limitation to the present application.

[0023] Please refer to Figure 1 and Figure 2 The semiconductor heat dissipation device of the embodiment of the present application includes a film substrate 1, a resin protective layer 3 and a graphic heat sink 4. Specifically, the film substrate 1 is used to carry a semiconductor chip 2 with a first set thickness, and the semiconductor chip 2 is arranged on the carrying surface 1a of the film substrate 1 along a first direction, wherein the first direction is the extension direction of the side of the carrying surface 1a.

[0024] Preferably, the film substrate 1 is a COF (Chip-on-Film) film. The COF film has good flexibility and is suitable for use in scenarios that require bending or lightweighting. It can be better adapted to other integrated circuit components. The COF film itself has a carrier function, and circuit design can be performed on it, reducing redundant connections, making the semiconductor heat dissipation device more compact and more integrated.

[0025] Among them, the upper surface of the film substrate 1 can be used as the bearing surface 1a of the film substrate 1, and the bearing surface 1a is an integrated plane. The integrated plane can be understood as a complete and crack-free plane, and a thermal conductive coating can be added or a thermal conductive material can be filled on the bearing surface 1a.

[0026] It should be noted that the embodiment of the present application is constructed with XY coordinates. Figure 2 or Figure 4For example, the X-axis direction can be regarded as the first direction, that is, the extension direction of the side of the supporting surface 1a or the left-right extension direction of the semiconductor heat dissipation device, and the Y-axis direction can be regarded as the second direction, that is, the direction perpendicular to the supporting surface 1a of the film substrate 1 and the first direction or the up-and-down extension direction of the semiconductor heat dissipation device. Of course, this embodiment is not limited to this, and XY can also be any other directions perpendicular to each other in space in actual needs, which will not be repeated here.

[0027] Furthermore, the resin protection layer 3 is disposed around the semiconductor chip 2 and connects the side edge of the semiconductor chip 2 and the supporting surface 1 a of the film substrate 1 , so as to protect the semiconductor chip 2 on the film substrate 1 .

[0028] Preferably, the resin protection layer 3 can be made of epoxy resin or polyimide resin with high heat resistance, chemical corrosion resistance and good adhesion.

[0029] Furthermore, the pattern heat sink 4 is connected to the side of the semiconductor chip 2 facing away from the film substrate 1 and covers the semiconductor chip 2 to dissipate heat for the semiconductor chip 2 .

[0030] The adhesive material layer 5 is filled between the pattern heat sink 4 and the semiconductor chip 2 , and the adhesive material layer 5 is further filled between the pattern heat sink 4 , the resin protection layer 3 and the film substrate 1 .

[0031] It should be noted that the graphic heat sink 4 is connected to the semiconductor chip 2 through the adhesive material layer 5. While ensuring the stable assembly of the graphic heat sink 4 and the semiconductor chip 2, the adhesive material layer 5 transfers the heat of the semiconductor chip 2 to the graphic heat sink 4 for heat dissipation. At the same time, the design of the adhesive material layer 5 extending and filling between the graphic heat sink 4, the resin protective layer 3 and the film substrate 1 can increase the heat dissipation path, ensure the heat dissipation effect of the graphic heat sink 4 and improve the overall structural stability of the semiconductor heat dissipation device, and the extended and filled adhesive material layer 5 can provide a certain connection buffer to reduce the stress caused by thermal expansion and contraction of different components, and prevent material stratification or cracking during long-term use.

[0032] In the specific implementation process, in the first direction, the end of the semiconductor chip 2 protrudes from the adhesive material layer 5, that is, the two ends of the semiconductor chip 2 will not be covered by the adhesive material layer 5. Then, when the graphic heat sink 4 is bonded to the semiconductor chip 2 through the adhesive material layer 5, the air that may exist on the side of the semiconductor chip 2 can be discharged from the end of the uncovered semiconductor chip 2, thereby preventing the relative contact area between the graphic heat sink 4 and the semiconductor chip 2 from being reduced, ensuring the close fit between the graphic heat sink 4 and the semiconductor chip 2, and further ensuring the overall heat dissipation effect of the semiconductor heat dissipation device.

[0033] Continue to refer Figure 3 and Figure 4, heat dissipation recessed notches 6 are provided on both sides of the pattern heat sink 4 and the adhesive material layer 5, and the end of the semiconductor chip 2 corresponds to the heat dissipation recessed notches 6, that is, the structures on both sides of the pattern heat sink and the adhesive material layer 5 are designed not to cover the end of the semiconductor chip 2, thereby forming an exhaust channel at the edge of the adhesive material layer 5. In the process of connecting the pattern heat sink 4 with the semiconductor chip 2 through the adhesive material layer 5, the air on the side of the semiconductor chip 2 can be discharged through this exhaust channel, avoiding bubbles from being enclosed in the adhesive material layer 5 to form thermal resistance, affecting the heat conduction from the semiconductor chip 2 to the pattern heat sink 4, that is, the heat dissipation recessed notch 6 allows the adhesive material layer 5 to more evenly cover the area between the semiconductor chip 2 and the pattern heat sink 4, thereby reducing the thermal resistance caused by the gaps generated by the bubbles, and ensuring the close fit between the pattern heat sink 4 and the semiconductor chip 2, further enhancing the efficiency of heat conduction.

[0034] It should be noted that, in the first direction, the heat dissipation recessed gap 6 gradually expands from close to the semiconductor chip 2 to far away from the semiconductor chip 2 , and the gradually expanding heat dissipation recessed gap 6 helps to reduce the resistance of air discharge and improve the smoothness of air discharge.

[0035] Preferably, the heat dissipation recessed notch 6 may be designed in a V-shaped notch structure or a trapezoidal notch structure.

[0036] refer to Figure 5 The adhesive material layer 5 may include a first heat dissipation material portion 51 and a second heat dissipation material portion 52, the first heat dissipation material portion 51 is applied between the graphic heat sink 4 and the semiconductor chip 2, and the second heat dissipation material portion 52 is connected to the first heat dissipation material portion 51 and filled between the graphic heat sink 4, the resin protective layer 3 and the film substrate 1.

[0037] In the specific implementation process, the first heat dissipation material part 51 takes the lead in the heat conduction work for the semiconductor chip 2, and transfers the heat of the semiconductor chip 2 to the graphic heat sink 4, while the second heat dissipation material part 52 can increase the heat dissipation path, while ensuring the stable connection relationship between the graphic heat sink 4, the resin protective layer 3 and the film substrate 1, and providing a certain connection buffer to reduce the stress caused by thermal expansion and contraction of different components, and prevent material stratification or cracking during long-term use.

[0038] It is understandable that the heat dissipation recess 6 can be located on both sides of the first heat dissipation material portion 51 , or the heat dissipation recess 6 can be located on both sides of the first heat dissipation material portion 51 and extend to the second heat dissipation material portion 52 .

[0039] Furthermore, the forming material of the first heat dissipation material portion 51 includes liquid silver paste. It should be noted that liquid silver paste has excellent thermal conductivity. Using liquid silver paste as the forming material of the first heat dissipation material portion 51 can significantly improve the heat dissipation effect, and help to more quickly direct the heat of the semiconductor chip 2 to the graphic heat sink 4, thereby enhancing the overall thermal management capability of the heat dissipation device. Liquid silver paste has good fluidity and can effectively fill the tiny gap between the semiconductor chip 2 and the graphic heat sink 4 to avoid the generation of voids or bubbles. Based on this, in an application scenario, the semiconductor heat dissipation device can omit the design of the heat dissipation recess notch 6, that is, the selection of liquid silver paste for the first heat dissipation material portion 51 no longer requires changing the processing of the graphic heat sink 4 according to the chip size.

[0040] In one embodiment, the forming material of the first heat dissipation material part 51 includes a colloidal thermal conductive adhesive, wherein the colloidal thermal conductive adhesive includes at least one of a silver paste thermal conductive adhesive, a graphene-based thermal conductive adhesive or a ceramic filler thermal conductive adhesive. Specifically, the silver paste thermal conductive adhesive not only has excellent thermal conductivity, but also can provide strong adhesion to ensure a stable connection between the graphic heat sink 4 and the semiconductor chip 2, and prevent contact failure caused by external force. Compared with metal-based thermal conductive adhesive, graphene-based thermal conductive adhesive can maintain good adhesion and high temperature resistance for a longer period of time, and is suitable for high temperature and high frequency working environments.

[0041] It should be noted that in the second direction, the vertical projection of the first heat dissipation material portion 51 and the vertical projection of the semiconductor chip 2 are located on the same center line, and the vertical projection of the first heat dissipation material portion 51 partially covers the vertical projection of the semiconductor chip 2, and the vertical projections of the first heat dissipation material portion 51 and the second heat dissipation material portion 52 are located within the coverage range of the vertical projection of the graphic heat sink 4.

[0042] Specifically, the vertical projection of the first heat dissipation material portion 51 and the vertical projection of the semiconductor chip 2 are located on the same center line, ensuring the optimal contact position between the first heat dissipation material portion 51 and the semiconductor chip 2, which can minimize the thermal resistance in the heat conduction process, ensure that heat can be efficiently conducted from the semiconductor chip 2 to the first heat dissipation material portion 51 and further transferred to the graphic heat sink 4, and can also avoid gaps or uneven areas between the first heat dissipation material portion 51 and the semiconductor chip 2, thereby optimizing the heat flow path and improving the heat conduction efficiency.

[0043] And the vertical projections of the first heat dissipation material part 51 and the second heat dissipation material part 52 are located within the coverage range of the vertical projection of the pattern heat sink 4, thereby ensuring that the adhesive material layer 5 is configured between the semiconductor chip 2 and the pattern heat sink 4 without overflowing, that is, the heat conduction of the first heat dissipation material part 51 and the second heat dissipation material part 52 is fully applied to the pattern heat sink 4, and the pattern heat sink 4 fully contacts the adhesive material layer 5 on the entire heat flow path, ensuring the heat absorption and diffusion ability of the pattern heat sink 4, avoiding heat retention or loss, and improving the heat dissipation efficiency.

[0044] In one embodiment, reference Figure 6 and Figure 7 The semiconductor heat dissipation device further includes a transport tape 7 for loading and transporting the pattern heat sink 4 before the pattern heat sink 4 is connected to the semiconductor chip 2 .

[0045] Specifically, a plurality of pattern heat sinks 4 are arranged at intervals on the transport tape 7, and the adhesive material layer 5 is connected between the pattern heat sink 4 and the transport tape 7. The transport tape 7 is used as a transport and loading tool for the graphic heat sink 4, and the adhesive material layer 5 is connected between the graphic heat sink 4 and the transport tape 7. This can omit the step of applying adhesive on the side of the semiconductor chip 2 and the corresponding equipment in the related technology, thereby improving the assembly efficiency of the semiconductor heat sink.

[0046] Furthermore, an adjustment groove 71 is provided on the side of the transport tape 7 facing the graphic heat sink 4, so that the first heat dissipation material portion 51 of the adhesive material layer 5 is connected to the graphic heat sink 4 and is located in the adjustment groove 71, and the second heat dissipation material portion 52 of the adhesive material layer 5 is connected between the graphic heat sink 4 and the transport tape 7 and is arranged on both sides of the first heat dissipation material portion 51, thereby ensuring that the adhesive material layer 5 is stably connected between the graphic heat sink 4 and the transport tape 7, and the size of the first heat dissipation material portion 51 can be adjusted by the adjustment groove 71, that is, the amount of material forming the first heat dissipation material portion 51 is adjusted, thereby improving the application range of the graphic heat sink 4 for different semiconductor chips 2, that is, the design of the adjustment groove 71 makes it possible to more accurately control the filling amount of the material forming the first heat dissipation material portion 51, for example, by adjusting the size of the adjustment groove 71, the volume and amount of the first heat dissipation material portion 51 are adjusted, thereby avoiding the waste of excess heat dissipation material or the problem of insufficient heat dissipation caused by insufficient material.

[0047] It can be understood that before the graphic heat sink 4 is connected to the semiconductor chip 2, the adjustment groove 71 provides a fixed accommodation space for the first heat dissipation material portion 51, that is, the first heat dissipation material portion 51 is located in the adjustment groove 71, and it can firmly contact the graphic heat sink 4 and be stably fixed, while the second heat dissipation material portion 52 is filled on both sides of the first heat dissipation material portion 51, ensuring the stable connection of the adhesive material layer 5 between the graphic heat sink 4 and the transport tape 7.

[0048] At the same time, the existence of the adjustment groove 71 effectively prevents the first heat dissipation material part 51 from being displaced or loosened during transportation, and the adjustment groove 71 provides a preset space for filling the material, avoiding the deviation of the heat dissipation material usage caused by improper human operation, thereby improving the accuracy and consistency of the production process.

[0049] In one embodiment, reference Figure 8 The semiconductor chip 2 may also have a second set thickness that is smaller than the first set thickness. Specifically, after the semiconductor chip 2 is polished from the first set thickness to the second set thickness, the semiconductor chip 2 has an integrated plane on the side facing away from the film substrate 1, and the graphic heat sink 4 is covered on the integrated plane through the adhesive material layer 5.

[0050] Specifically, the first set thickness of the semiconductor chip 2 may include 500-600 microns, and the second set thickness of the semiconductor chip 2 may include 200-300 microns. In the process of polishing the semiconductor chip 2 from the first set thickness to the second set thickness, the strength of the semiconductor chip 2 can be improved, and the flatness of the semiconductor chip 2 is improved, thereby preventing the generation of air cavities or air layers when the graphic heat sink 4 is connected to the semiconductor chip 2 through the adhesive material layer 5. Based on this, in an application scenario, the semiconductor heat dissipation device can omit the design of the heat dissipation recess notch 6, that is, through the polishing design of the second set thickness, there is no need to change the processing of the graphic heat sink 4 according to the chip size.

[0051] Preferably, the first set thickness of the semiconductor chip 2 is 570 micrometers, and the second set thickness of the semiconductor chip 2 is 210 micrometers.

[0052] In one embodiment, reference Fig. 9 The semiconductor heat dissipation device also includes a resin heat dissipation layer 8, which can be coated on the semiconductor chip 2 and the resin protective layer 3, and wrap the semiconductor chip 2 and the resin protective layer 3. The graphic heat sink 4 is connected to the side of the resin heat dissipation layer 8 away from the film substrate 1, and the adhesive material layer 5 is filled between the graphic heat sink 4 and the resin heat dissipation layer 8.

[0053] It should be noted that the side of the resin heat dissipation layer 8 facing the graphic heat sink 4 can be an integrated flat surface or an integrated curved surface, that is, the side of the resin heat dissipation layer 8 facing the graphic heat sink 4 has a flatness that avoids the presence of bubbles in the adhesive material layer 5, thereby preventing the generation of air cavities or air layers when the graphic heat sink 4 is connected to the resin heat dissipation layer 8 through the adhesive material layer 5. Based on this, in an application scenario, the semiconductor heat dissipation device can omit the design of the heat dissipation recess notch 6, that is, through the selection of the resin heat dissipation layer 8, there is no need to change the processing of the graphic heat sink 4 according to the chip size.

[0054] In an application scenario, the side of the resin heat dissipation layer 8 facing the graphic heat sink 4 is an integrated curved surface. Correspondingly, the structural contours of the graphic heat sink 4 and the resin heat dissipation layer 8 match. Therefore, the curved surface design of the two can help disperse the mechanical stress of the connection interface and reduce stress concentration. That is, under thermal expansion or external pressure, the curved surface can withstand pressure more evenly and avoid failure or separation of the contact layer due to pressure concentration. For heat dissipation devices that work in high-temperature environments for a long time, this structural design can improve the stability and reliability of the structure.

[0055] It should be noted that the graphic heat sink 4 of the embodiment of the present application may be a fin structure, a mesh heat dissipation structure or a honeycomb heat dissipation structure, so as to ensure the heat dissipation effect on the semiconductor chip 2.

[0056] An embodiment of the present application also provides a semiconductor device, which includes the semiconductor heat dissipation device of any of the above embodiments. Compared with the semiconductor devices in the related art, the semiconductor device of this embodiment avoids the possible accumulation of an air layer between the graphic heat sink and the semiconductor chip when the graphic heat sink is attached to the semiconductor chip, and constructs a discharge channel for this air layer, thereby ensuring the close fit between the graphic heat sink and the semiconductor chip, thereby improving the heat dissipation efficiency of the semiconductor chip.

[0057] For other working principles and processes of the semiconductor device of this embodiment, please refer to the description of the semiconductor heat dissipation device in the aforementioned embodiment of the present invention, which will not be repeated here.

[0058] The semiconductor heat dissipation device and semiconductor device provided by the present application are introduced in detail above. The principle and implementation method of the present application are explained by using specific examples in this article. It should be noted that in the present application, the description of each embodiment has its own emphasis. For the part that is not described or recorded in detail in a certain embodiment, please refer to the relevant description of other embodiments.

[0059] The above are only preferred embodiments of the present application, and the patent scope of the present application is not limited thereto. The various technical features of the technical solution of the present application can be arbitrarily combined. In order to make the description concise, not all possible combinations of the various technical features in the above embodiments are described. Any equivalent structure or equivalent process transformation made using the contents of the specification and drawings of this application, or directly or indirectly used in other related technical fields, as long as there is no contradiction in the combination of these technical features, are equally included in the patent protection scope of the present application.

Claims

1. A semiconductor heat dissipation device, characterized in that: include: A film substrate, used for carrying semiconductor chips having a first set thickness, and the semiconductor chips are arranged on a carrying surface of the film substrate along a first direction, wherein the first direction is an extension direction of a side edge of the carrying surface; A resin protective layer is disposed around the semiconductor chip and connects the side of the semiconductor chip and the supporting surface of the film substrate; A pattern heat sink connected to a side of the semiconductor chip away from the film substrate and covering the semiconductor chip, an adhesive material layer being filled between the pattern heat sink and the semiconductor chip, and the adhesive material layer further filling between the pattern heat sink, the resin protective layer and the film substrate; Among them, in the first direction, the end of the semiconductor chip protrudes from the adhesive material layer, and the two sides of the graphic heat sink and the adhesive material layer are provided with heat dissipation recesses, and the end of the semiconductor chip corresponds to the heat dissipation recess.

2. The semiconductor heat dissipation device according to claim 1, characterized in that: In the first direction, the heat dissipation recess gradually expands from close to the semiconductor chip to away from the semiconductor chip.

3. The semiconductor heat dissipation device according to claim 1, characterized in that: The adhesive material layer includes a first heat dissipation material portion and a second heat dissipation material portion, wherein the first heat dissipation material portion is applied between the graphic heat sink and the semiconductor chip, and the second heat dissipation material portion is connected to the first heat dissipation material portion and filled between the graphic heat sink, the resin protective layer and the film substrate.

4. The semiconductor heat dissipation device according to claim 3, characterized in that: The forming material of the first heat dissipation material part includes liquid silver paste or colloidal thermal conductive adhesive; and the colloidal thermal conductive adhesive includes at least one of silver paste thermal conductive adhesive, graphene-based thermal conductive adhesive or ceramic filler thermal conductive adhesive.

5. The semiconductor heat dissipation device according to claim 3, characterized in that: In the second direction, the vertical projection of the first heat dissipation material portion and the vertical projection of the semiconductor chip are located on the same center line, and the vertical projection of the first heat dissipation material portion partially covers the vertical projection of the semiconductor chip, and the vertical projections of the first heat dissipation material portion and the second heat dissipation material portion are located within the coverage range of the vertical projection of the graphic heat sink, wherein the second direction is perpendicular to the supporting surface of the film substrate and the first direction.

6. The semiconductor heat dissipation device according to claim 3, characterized in that: Also included is a shipping tape for loading and shipping the patterned heat sink before the patterned heat sink is attached to the semiconductor chip; A plurality of the pattern heat sinks are arranged at intervals on the transport tape, and the adhesive material layer is connected between the pattern heat sinks and the transport tape.

7. The semiconductor heat dissipation device according to claim 6, characterized in that: An adjustment groove is provided on the side of the transport tape facing the graphic heat sink, the first heat dissipation material portion of the adhesive material layer is connected to the graphic heat sink and is located in the adjustment groove, and the second heat dissipation material portion of the adhesive material layer is connected between the graphic heat sink and the transport tape and is arranged on both sides of the first heat dissipation material portion.

8. The semiconductor heat dissipation device according to claim 1, characterized in that: It also includes a resin heat dissipation layer, which is coated on the semiconductor chip and the resin protective layer and wraps the semiconductor chip and the resin protective layer. The graphic heat sink is connected to the side of the resin heat dissipation layer away from the film substrate and the adhesive material layer is filled between the graphic heat sink and the resin heat dissipation layer.

9. The semiconductor heat dissipation device according to claim 1, characterized in that: The semiconductor chip has a second set thickness that is smaller than the first set thickness. After the semiconductor chip is polished from the first set thickness to the second set thickness, the semiconductor chip has an integral plane on a side facing away from the film substrate, and the graphic heat sink is covered on the integral plane through the adhesive material layer.

10. A semiconductor device, characterized in that: The semiconductor device comprises the semiconductor heat dissipation device according to any one of claims 1 to 9.

Images