Adjustment method and plasma processing apparatus

Abstract

The invention provides a technique for correcting inter-device differences generated among a plurality of plasma processing devices. The adjustment method includes: acquiring reference distribution data in a first plasma processing apparatus having a first chamber and a first substrate support portion disposed in the first chamber; the reference distribution data is data on the distribution of ion flux generated between the plasma generated in the first chamber and the substrate arranged on the first substrate supporting part; in a second plasma processing apparatus having a second chamber and a second substrate support portion disposed in the second chamber, acquiring distribution data relating to the distribution of ion flux generated between the plasma generated in the second chamber and the substrate disposed in the second substrate support portion; and a step of adjusting an element capable of adjusting the ion flux in the second plasma processing apparatus on the basis of the distribution data acquired in the second plasma processing apparatus and the reference distribution data acquired in the first plasma processing apparatus.

Description

Technical Field

[0001] Illustrative embodiments of the present invention relate to a conditioning method and a plasma processing apparatus. Background Art

[0002] As a technology for measuring plasma on the wafer surface, there is an on-wafer monitoring system (On-wafer Monitoring System) described in Patent Document 1.

[0003] Prior art literature

[0004] Patent Literature

[0005] Patent Document 1: Japanese Patent Application Publication No. 2003-282546 Summary of the invention

[0006] Technical problem to be solved by the invention

[0007] The present invention provides a technique for correcting inter-device differences occurring among a plurality of plasma processing devices.

[0008] Technical solutions for solving technical problems

[0009] An adjustment method in an exemplary embodiment of the present invention includes: (a) in a first plasma processing apparatus having a first chamber and a first substrate support portion arranged in the first chamber, a step of acquiring baseline distribution data, the baseline distribution data being data on the distribution of ion flux generated between plasma generated in the first chamber and a substrate arranged in the first substrate support portion; (b) in a second plasma processing apparatus having a second chamber and a second substrate support portion arranged in the second chamber, a step of acquiring distribution data, the distribution data being data on the distribution of ion flux generated between plasma generated in the second chamber and a substrate arranged in the second substrate support portion; and (c) based on the distribution data acquired in the second plasma processing apparatus and the baseline distribution data acquired in the first plasma processing apparatus, a step of adjusting an element capable of adjusting the ion flux in the second plasma processing apparatus.

[0010] Effects of the Invention

[0011] According to an exemplary embodiment of the present invention, it is possible to provide a technique for correcting inter-apparatus differences occurring among a plurality of plasma processing apparatuses. BRIEF DESCRIPTION OF THE DRAWINGS

[0012] Figure 1 It is a diagram for explaining a configuration example of a plasma processing system.

[0013] Figure 2 It is a diagram for explaining a configuration example of a capacitive coupling type plasma processing apparatus.

[0014] Figure 3 1 is a diagram showing an example of the upper surface of the substrate supporting portion 11 .

[0015] Figure 4 1 is a diagram showing an example of a cross section of the substrate supporting portion 11 .

[0016] Figure 5 is a block diagram showing an example of the structure of the control substrate 80.

[0017] Figure 6 is a flow chart representing a method of one exemplary embodiment.

[0018] Figure 7 This is a flowchart showing an example of step ST1.

[0019] Figure 8 This is a diagram showing an example of reference distribution data.

[0020] Fig. 9 This is a flowchart showing an example of step ST2.

[0021] Fig.10 This is a diagram showing an example of distribution data.

[0022] Fig.11 This is a flowchart showing an example of step ST3.

[0023] Fig.12 is a flow chart representing a method of one exemplary embodiment.

[0024] Fig.13 This is a flowchart showing an example of step ST0.

[0025] Fig.14 It is a diagram for explaining another configuration example of the plasma processing apparatus. DETAILED DESCRIPTION

[0026] Hereinafter, each embodiment of the present invention will be described.

[0027] In an exemplary embodiment, an adjustment method is provided, comprising: (a) in a first plasma processing apparatus having a first chamber and a first substrate support portion disposed in the first chamber, a step of acquiring baseline distribution data, the baseline distribution data being data on the distribution of ion flux generated between a plasma generated in the first chamber and a substrate disposed on the first substrate support portion; (b) in a second plasma processing apparatus having a second chamber and a second substrate support portion disposed in the second chamber, a step of acquiring distribution data, the distribution data being data on the distribution of ion flux generated between a plasma generated in the second chamber and a substrate disposed on the second substrate support portion; and (c) a step of adjusting an element capable of adjusting ion flux in the second plasma processing apparatus based on the distribution data acquired in the second plasma processing apparatus and the baseline distribution data acquired in the first plasma processing apparatus.

[0028] In an exemplary embodiment, step (a) includes: (a-1) a step of configuring a substrate in a first substrate support; (a-2) a step of generating plasma in a first chamber to perform plasma processing on the substrate; (a-3) a step of supplying electric power to each of a plurality of first heaters configured in the first substrate support; (a-4) a step of obtaining the electric power supplied to each of the plurality of first heaters in a state where plasma is generated in the first chamber; and (a-5) a step of calculating baseline distribution data based on the electric power obtained for each of the plurality of first heaters in step (a-4).

[0029] In an exemplary embodiment, step (b) includes: (b-1) a step of configuring a substrate in a second substrate support; (b-2) a step of generating plasma in a second chamber to perform plasma processing on the substrate; (b-3) a step of supplying electric power to each of a plurality of second heaters configured in the second substrate support; (b-4) a step of obtaining the electric power supplied to each of the plurality of second heaters in a state where plasma is generated in the second chamber; and (b-5) a step of calculating distribution data based on the electric power obtained for each of the plurality of second heaters in step (b-4).

[0030] In an exemplary embodiment, the elements in step (c) include at least any one of a parameter related to the plasma processing in the second plasma processing apparatus and a parameter related to the structure of the second plasma processing apparatus.

[0031] In an exemplary embodiment, the method further includes a step (d) of preparing a data table associating changes in the distribution of ion flux with changes in elements capable of adjusting the distribution of ion flux, and a step (c) of adjusting elements in the second plasma processing device based on a difference between the baseline distribution data and the distribution data, with reference to the data table prepared in step (d).

[0032] In an exemplary embodiment, the change in the element includes a change in the distribution of the electron density of the plasma.

[0033] In an exemplary embodiment, the first substrate supporting portion has a first substrate supporting surface for supporting the substrate, the first substrate supporting surface includes a plurality of first supporting regions, and the plurality of first heaters are respectively arranged in the first substrate supporting portion in each of the plurality of first supporting regions.

[0034] In an exemplary embodiment, the second substrate supporting portion has a second substrate supporting surface for supporting the substrate, the second substrate supporting surface includes a plurality of second supporting regions, and the plurality of second heaters are respectively arranged in the second substrate supporting portion in each of the plurality of second supporting regions.

[0035] In an exemplary embodiment, a plasma processing apparatus is provided, comprising a chamber, a substrate support portion arranged in the chamber, and a control portion, wherein the control portion of the plasma processing apparatus performs the following processing: (a) obtaining baseline distribution data obtained in other plasma processing apparatuses different from the plasma processing apparatus, the baseline distribution data being data on the distribution of ion flux generated between plasma generated in other chambers in the other plasma processing apparatuses and substrates arranged on other substrate supports; (b) obtaining distribution data in the plasma processing apparatus, the distribution data being data on the distribution of ion flux generated between plasma generated in the chamber and substrates arranged on the substrate support portion; and (c) adjusting an element capable of adjusting ion flux in the plasma processing apparatus based on the distribution data obtained in the plasma processing apparatus and the baseline distribution data obtained in the other plasma processing apparatuses.

[0036] Hereinafter, various embodiments of the present invention will be described in detail with reference to the accompanying drawings. In addition, the same reference numerals are used for the same or identical elements in the various figures, and repeated descriptions are omitted. Unless otherwise specifically denied, the positional relationships such as up, down, left, and right are described based on the positional relationships shown in the drawings. The dimensions of the drawings do not represent actual ratios, and the actual ratios are not limited to the ratios shown in the drawings.

[0037] Figure 1: is a diagram for illustrating a structural example of a plasma processing system. In one embodiment, the plasma processing system includes a plasma processing device 1 and a control unit 2. The plasma processing system may include a plurality of plasma processing devices 1 and a plurality of control units 2. The plasma processing system is an example of a substrate processing system, and the plasma processing device 1 is an example of a substrate processing device. The plasma processing device 1 includes a plasma processing chamber (also referred to as a "chamber") 10, a substrate support portion 11, and a plasma generating portion 12. The plasma processing chamber 10 has a plasma processing space. In addition, the plasma processing chamber 10 has: at least one gas supply port for supplying at least one processing gas to the plasma processing space; and at least one gas exhaust port for exhausting gas from the plasma processing space. The gas supply port is connected to the gas supply portion 20 described later, and the gas exhaust port is connected to the exhaust system 40 described later. The substrate support portion 11 is arranged in the plasma processing space and has a substrate support surface for supporting a substrate.

[0038] The plasma generating unit 12 is configured to generate plasma from at least one processing gas supplied to the plasma processing space. The plasma formed in the plasma processing space may be a capacitively coupled plasma (CCP: Capacitively Coupled Plasma), an inductively coupled plasma (ICP: Inductively Coupled Plasma), an ECR plasma (Electron-Cyclotron-resonance plasma: Electron cyclotron resonance plasma), a helicon wave excited plasma (HWP: Helicon Wave Plasma) or a surface wave plasma (SWP: Surface Wave Plasma), etc. In addition, various types of plasma generating units including an AC (Alternating Current: Alternating Current) plasma generating unit and a DC (Direct Current: Direct Current) plasma generating unit may be used. In one embodiment, the AC signal (AC electric power) used in the AC plasma generating unit has a frequency in the range of 100kHz to 10GHz. Therefore, the AC signal includes an RF (Radio Frequency: High Frequency) signal and a microwave signal. In one embodiment, the RF signal has a frequency in the range of 100kHz to 150MHz.

[0039] The control unit 2 is capable of processing computer-executable commands, which are used to cause the plasma processing device 1 to perform the various steps described in the present invention. The control unit 2 can be configured to control the various elements of the plasma processing device 1 to perform the various steps described herein. In one embodiment, a part or all of the control unit 2 may be included in the plasma processing device 1. The control unit 2 can control multiple plasma processing devices 1. The control unit 2 may include a processing unit 2a1, a storage unit 2a2, and a communication interface 2a3. The control unit 2 is implemented, for example, by a computer 2a. The processing unit 2a1 can read a program from the storage unit 2a2 and perform various control operations by executing the read program. The program can be stored in the storage unit 2a2 in advance, or it can be obtained via a medium when necessary. The obtained program is maintained in the storage unit 2a2, and is read and executed from the storage unit 2a2 by the processing unit 2a1. The medium can be various storage media readable by the computer 2a, or it can be a communication line connected to the communication interface 2a3. The processing unit 2a1 can be a CPU (Central Processing Unit). The storage unit 2a2 may include a RAM (Random Access Memory), a ROM (Read Only Memory), a HDD (Hard Disk Drive), an SSD (Solid State Drive), or a combination thereof. The communication interface 2a3 may communicate with the plasma processing device 1 via a communication line such as a LAN (Local Area Network).

[0040] Next, a configuration example of a capacitive coupling type plasma processing apparatus will be described as an example of the plasma processing apparatus 1 . Figure 2 This is a diagram for explaining a configuration example of a capacitive coupling type plasma processing apparatus.

[0041] A capacitively coupled plasma processing apparatus 1 includes a plasma processing chamber 10, a gas supply unit 20, a power supply 30, and an exhaust system 40. In addition, the plasma processing apparatus 1 includes a substrate support unit 11 and a gas introduction unit. The gas introduction unit is configured to be able to introduce at least one processing gas into the plasma processing chamber 10. The gas introduction unit includes a shower head 13. The substrate support unit 11 is disposed in the plasma processing chamber 10. The shower head 13 is disposed above the substrate support unit 11. In one embodiment, the shower head 13 constitutes at least a portion of the ceiling of the plasma processing chamber 10. The plasma processing chamber 10 has a plasma processing space 10s defined by the shower head 13, the side walls 10a and the bottom wall 10b of the plasma processing chamber 10, and the substrate support unit 11. The plasma processing chamber 10 is grounded. The shower head 13 and the substrate support unit 11 are electrically insulated from the shell of the plasma processing chamber 10.

[0042] The substrate support portion 11 includes a main body 111 and a ring assembly 112. The main body 111 has a central region 111a for supporting a substrate W, and an annular region 111b for supporting the ring assembly 112. A wafer is an example of a substrate W. The annular region 111b of the main body 111 surrounds the central region 111a of the main body 111 when viewed from above. The substrate W is arranged on the central region 111a of the main body 111, and the ring assembly 112 is arranged on the annular region 111b of the main body 111 in a manner of surrounding the substrate W on the central region 111a of the main body 111. Therefore, the central region 111a is also referred to as a substrate support surface for supporting the substrate W, and the annular region 111b is also referred to as a ring support surface for supporting the ring assembly 112.

[0043] In one embodiment, the main body 111 includes a base 1110 and an electrostatic chuck 1111. The base 1110 includes a conductive component. The conductive component of the base 1110 can function as a lower electrode. The electrostatic chuck 1111 is arranged on the base 1110. The electrostatic chuck 1111 includes a ceramic component 1111a and an electrostatic electrode 1111b arranged in the ceramic component 1111a. The ceramic component 1111a has a central area 111a. In one embodiment, the ceramic component 1111a also has an annular area 111b. In addition, other components surrounding the electrostatic chuck 1111, such as an annular electrostatic chuck or an annular insulating component, may have an annular area 111b. In this case, the ring assembly 112 may be arranged on the annular electrostatic chuck or the annular insulating component, or on both the electrostatic chuck 1111 and the annular insulating component. In addition, at least one RF / DC electrode coupled to the RF power supply 31 and / or DC power supply 32 described later may be arranged in the ceramic component 1111a. In this case, the at least one RF / DC electrode functions as a lower electrode. In the case where the bias RF signal and / or DC signal described later is supplied to at least one RF / DC electrode, the RF / DC electrode is also referred to as a bias electrode. In addition, the conductive component of the base 1110 and the at least one RF / DC electrode may function as a plurality of lower electrodes. In addition, the electrostatic electrode 1111b may function as a lower electrode. Therefore, the substrate support portion 11 includes at least one lower electrode.

[0044] The ring assembly 112 includes one or more ring-shaped components. In one embodiment, the one or more ring-shaped components include one or more edge rings and at least one cover ring. The edge ring is formed of a conductive material or an insulating material, and the cover ring is formed of an insulating material.

[0045] In addition, the substrate support portion 11 may include a temperature adjustment module, which is configured to adjust at least one of the electrostatic chuck 1111, the ring assembly 112 and the substrate to a target temperature. The temperature adjustment module may include a heater, a heat transfer medium, a flow path 1110a, or a combination thereof. A heat transfer fluid such as brine or gas can flow in the flow path 1110a. In one embodiment, the flow path 1110a is formed in the base 1110, and one or more heaters are arranged in the ceramic part 1111a of the electrostatic chuck 1111. In addition, the substrate support portion 11 may include a heat transfer gas supply portion, which is configured to supply a heat transfer gas to the gap between the back side of the substrate W and the central area 111a. Details of the temperature adjustment module are described in Figure 4 To be described later.

[0046] The shower head 13 is configured to be able to introduce at least one processing gas from the gas supply unit 20 into the plasma processing space 10s. The shower head 13 has at least one gas supply port 13a, at least one gas diffusion chamber 13b and a plurality of gas introduction ports 13c. The processing gas supplied to the gas supply port 13a is introduced into the plasma processing space 10s from the plurality of gas introduction ports 13c through the gas diffusion chamber 13b. In addition, the shower head 13 includes at least one upper electrode. In addition, in addition to the shower head 13, the gas introduction unit may also include one or more side gas injection units (SGI: Side Gas Injector) installed in one or more openings formed in the side wall 10a.

[0047] The gas supply unit 20 may include at least one gas source 21 and at least one flow controller 22. In one embodiment, the gas supply unit 20 is configured to supply at least one process gas from the gas source 21 corresponding thereto to the shower head 13 via the flow controller 22 corresponding thereto. Each flow controller 22 may include, for example, a mass flow controller or a pressure-controlled flow controller. Furthermore, the gas supply unit 20 may include at least one flow modulation device for modulating or pulsing the flow of at least one process gas.

[0048] The power supply 30 includes an RF power supply 31 coupled to the plasma processing chamber 10 via at least one impedance matching circuit. The RF power supply 31 is configured to supply at least one RF signal (RF electric power) to at least one lower electrode and / or at least one upper electrode. Thus, plasma can be formed from at least one processing gas supplied to the plasma processing space 10s. Therefore, the RF power supply 31 can function as at least a part of the plasma generating unit 12. In addition, by supplying a bias RF signal to at least one lower electrode, a bias potential can be generated on the substrate W, and the ion components in the formed plasma can be attracted to the substrate W.

[0049] In one embodiment, the RF power supply 31 includes a first RF generating unit 31a and a second RF generating unit 31b. The first RF generating unit 31a is coupled to at least one lower electrode and / or at least one upper electrode via at least one impedance matching circuit, and is configured to generate a generating source RF signal (generating source RF electric power) for plasma generation. In one embodiment, the generating source RF signal has a frequency in the range of 10 MHz to 150 MHz. In one embodiment, the first RF generating unit 31a may be configured to generate a plurality of generating source RF signals having different frequencies. The generated one or more generating source RF signals are supplied to at least one lower electrode and / or at least one upper electrode.

[0050] The second RF generating unit 31b is coupled to at least one lower electrode via at least one impedance matching circuit, and is configured to generate a bias RF signal (bias RF electric power). The frequency of the bias RF signal may be the same as or different from the frequency of the generating source RF signal. In one embodiment, the bias RF signal has a frequency lower than the frequency of the generating source RF signal. In one embodiment, the bias RF signal has a frequency in the range of 100kHz to 60MHz. In one embodiment, the second RF generating unit 31b may be configured to generate a plurality of bias RF signals having different frequencies. The generated one or more bias RF signals are supplied to at least one lower electrode. In addition, in various embodiments, at least one of the generating source RF signal and the bias RF signal may be pulsed.

[0051] In addition, the power supply 30 may include a DC power supply 32 coupled to the plasma processing chamber 10. The DC power supply 32 includes a first DC generating unit 32a and a second DC generating unit 32b. In one embodiment, the first DC generating unit 32a is connected to at least one lower electrode and is configured to generate a first DC signal. The generated first DC signal is applied to at least one lower electrode. In one embodiment, the second DC generating unit 32b is connected to at least one upper electrode and is configured to generate a second DC signal. The generated second DC signal is applied to at least one upper electrode.

[0052] In various embodiments, the first DC signal and the second DC signal may be pulsed. In this case, a sequence of voltage pulses is applied to at least one lower electrode and / or at least one upper electrode. The voltage pulse may have a pulse waveform in the shape of a rectangle, a trapezoid, a triangle, or a combination thereof. In one embodiment, a waveform generator for generating a sequence of voltage pulses from a DC signal is connected between the first DC generator 32a and at least one lower electrode. Therefore, the first DC generator 32a and the waveform generator constitute a voltage pulse generator. In the case where the second DC generator 32b and the waveform generator constitute a voltage pulse generator, the voltage pulse generator is connected to at least one upper electrode. The voltage pulse may have a positive polarity or a negative polarity. In addition, the sequence of voltage pulses may include one or more positive polarity voltage pulses and one or more negative polarity voltage pulses in one cycle. In addition, the first DC generator 32a and the second DC generator 32b may be provided in addition to the RF power supply 31, or the first DC generator 32a may be provided instead of the second RF generator 31b.

[0053] The exhaust system 40 can be connected to the gas exhaust port 10e provided at the bottom of the plasma processing chamber 10, for example. The exhaust system 40 can include a pressure regulating valve and a vacuum pump. The pressure in the plasma processing space 10s can be adjusted by the pressure regulating valve. The vacuum pump can include a turbomolecular pump, a dry pump, or a combination thereof.

[0054] Figure 3 FIG. 1 is a diagram showing an example of the upper surface of the substrate support portion 11. Figure 3 As shown in FIG. 1 , the substrate support portion 11 includes a central region 111 a for supporting the substrate W and an annular region 111 b for supporting the ring assembly 112. The central region 111 a is as shown in FIG. Figure 3 As shown by the dotted lines in FIG. 1 , the temperature control module includes a plurality of partitions 111c. In this embodiment, the temperature control module can control the temperature of the substrate W or the substrate support 11 by the partition 111c. The number of partitions 111c and the area and shape of each partition 111c can be appropriately set according to the conditions required for the temperature control of the substrate W.

[0055] Figure 4 1 is a diagram showing an example of a cross section of the substrate supporting portion 11 . Figure 4 express Figure 3 A portion of the cross section of the substrate support portion 11 at AA'. Figure 4 As shown in FIG. 1 , the substrate support portion 11 includes an electrostatic chuck 1111, a base 1110, and a control substrate 80. The electrostatic chuck 1111 includes a plurality of heaters 200 and a plurality of resistors 201 therein. Figure 3 In each of the partitions 111c shown, a heater 200 and a resistor 201 are arranged inside the electrostatic chuck 1111. In each of the partitions 111c, the resistor 201 is arranged near the heater 200. In one example, the resistor 201 can be arranged between the heater 200 and the base 1110, closer to the heater 200 than the base 1110. The resistor 201 is configured so that its resistance value can change with temperature. In one example, the resistor 201 can also be a thermistor (temperature sensor).

[0056] The base 1110 has one or more through holes 90 extending from the upper surface (the surface opposite to the electrostatic suction cup 1111) of the base 1110 to the lower surface (the surface opposite to the control substrate 80). The plurality of heaters 200 and the plurality of resistors 201 can be electrically connected to the control substrate 80 via the through holes 90. In the present embodiment, a connector 91 is embedded at one end of the upper surface side of the through hole 90, and a connector 92 is embedded at one end of the lower surface side of the through hole 90. The plurality of heaters 200 and the plurality of resistors 201 are electrically connected to the connector 91. The plurality of heaters 200 and the plurality of resistors 201 can be connected to the connector 91, for example, via wiring arranged inside the electrostatic suction cup 1111. The connector 92 is electrically connected to the control substrate 80. In addition, a plurality of wirings 93 for electrically connecting the connector 91 to the connector 92 are arranged in the through holes 90. Thus, the plurality of heaters 200 and the plurality of resistors 201 can be electrically connected to the control substrate 80 via the through-holes 90. In addition, the connector 92 can function as a supporting member for fixing the control substrate 80 to the base 1110.

[0057] The control substrate 80 is a substrate on which elements for controlling the plurality of heaters 200 and / or the plurality of resistors 201 are arranged. The control substrate 80 can be arranged parallel to the lower surface of the base 1110, opposite to the lower surface. The control substrate 80 can be arranged surrounded by a conductive member. The control substrate 80 can be supported on the base 1110 by a supporting member other than the connector 92.

[0058] The control substrate 80 can be electrically connected to the power supply unit 70 via the wiring 73. That is, the power supply unit 70 can be electrically connected to the plurality of heaters 200 via the control substrate 80. The power supply unit 70 generates power to be supplied to the plurality of heaters 200. Thus, the power supplied from the power supply unit 70 to the control substrate 80 can be supplied to the plurality of heaters 200 via the connector 92, the wiring 93, and the connector 91. In addition, an RF filter for reducing RF may be disposed between the power supply unit 70 and the control substrate 80. The RF filter may be provided outside the plasma processing chamber 10.

[0059] The control substrate 80 can be connected to the control unit 2 via the wiring 75 so as to be communicable. The wiring 75 may be an optical fiber. In this case, the control substrate 80 communicates with the control unit 2 by optical communication. The wiring 75 may also be a metal wiring.

[0060] Figure 51 is a block diagram showing an example of the structure of the control substrate 80. The control substrate 80 is provided with a control unit 81, a plurality of supply units 82 as an example of an element, and a plurality of measurement units 83. The plurality of supply units 82 and the plurality of measurement units 83 are provided corresponding to the plurality of heaters 200 and the plurality of resistors 201, respectively. One supply unit 82 and one measurement unit 83 may be provided for one heater 200 and one resistor 201.

[0061] Each measuring unit 83 generates a voltage based on the resistance value of each resistor 201 provided corresponding to each measuring unit 83 and supplies it to the control unit 81. The measuring unit 83 may be configured to convert the voltage generated based on the resistance value of the resistor 201 into a digital signal and output it to the control unit 81.

[0062] The control unit 81 controls the temperature of the substrate W in each partition 111c. The control unit 81 controls the supply of electric power to the plurality of heaters 200 based on the set temperature received from the control unit 2 and the voltage indicated by the digital signal received from the measuring unit 83. As an example, the control unit 81 calculates the temperature of the resistor 201 (hereinafter also referred to as "measured temperature") based on the voltage indicated by the digital signal received from the measuring unit 83. Furthermore, the control unit 81 controls each supply unit 82 based on the set temperature and the measured temperature. Each supply unit 82 switches whether to supply the electric power supplied from the electric power supply unit 70 to each heater 200 based on the control of the control unit 81. In addition, each supply unit 82 can also increase or decrease the electric power supplied from the electric power supply unit 70 based on the control of the control unit 81 and supply it to each heater 200. Thus, the substrate W, the electrostatic chuck 1111 and / or the susceptor 1110 can be brought to a predetermined temperature.

[0063] <An example of plasma treatment method>

[0064] The plasma processing method performed in the plasma processing apparatus 1 includes an etching process for etching a film on the substrate W using plasma. In one embodiment, the plasma processing method is executed by the control unit 2 .

[0065] First, the substrate W is transported into the chamber 10 by the transport arm and placed on the substrate support 11 by the lifter. Figure 2 The substrate is shown being held by suction on the substrate support portion 11 .

[0066] Then, the processing gas is supplied to the shower head 13 by the gas supply unit 20, and is supplied to the plasma processing space 10s from the shower head 13. The processing gas supplied at this time includes a gas for generating active species necessary for etching the substrate W.

[0067] One or more RF signals are supplied to the upper electrode and / or the lower electrode from the RF power supply 31. The atmosphere gas in the plasma processing space 10s may be exhausted from the gas exhaust port 10e, and the interior of the plasma processing space 10s may be depressurized. Thus, plasma is generated in the plasma processing space 10s, and the substrate W is etched.

[0068] During plasma processing, electric power is supplied to each of the plurality of heaters 200 so that the temperature of each of the plurality of heaters 200 (the temperature detected by the resistor 201) reaches a certain set temperature. Thus, the substrate W and the substrate support 11 are controlled to reach the set temperature.

[0069] <An example of a method for adjusting a plasma processing device>

[0070] Figure 6 1 is a flow chart showing an exemplary embodiment of an adjustment method (hereinafter also referred to as "this method"). This method may include a method for correcting the inter-device difference generated between multiple plasma processing devices. In one embodiment, the second plasma processing device is adjusted based on the first plasma processing device. Figure 6 As shown, the method includes a step (ST1) of acquiring reference distribution data in a first plasma processing device, a step (ST2) of acquiring distribution data in a second plasma processing device, and a step (ST3) of adjusting the second plasma processing device. The processing in each step can be Figure 1 The plasma processing system shown is performed. Figure 2 The plasma processing apparatus 1 shown is an example of a first plasma processing apparatus and a second plasma processing apparatus. Hereinafter, as an example, the control unit 2 controls each unit of the plasma processing apparatus 1 to execute the present method.

[0071] <Step ST1: Acquiring Reference Distribution Data in First Plasma Processing Device>

[0072] Figure 7: is a flowchart showing an example of step ST1. In step ST1, a substrate is subjected to plasma treatment in a first plasma processing device to obtain reference distribution data. The first plasma processing device may be a plasma processing device that serves as a reference device for adjustment. The first plasma processing device may be predetermined at the time of shipment, or may be determined by a user in a factory or a production line after shipment. In addition, the first plasma processing device may also be determined based on past processing performance. The first plasma processing device may be one or more. As an example, the substrate when obtaining the reference distribution data may be a simulated substrate. The simulated substrate may be a substrate on which no film is formed. The simulated substrate is, for example, a silicon wafer. The substrate may be a substrate on which a semiconductor element is formed. In addition, the plasma treatment when obtaining the reference distribution data may include a plasma etching process for forming a semiconductor element on the substrate. That is, the substrate may include a prescribed film and a mask film disposed on the prescribed film. The mask film may have a prescribed opening pattern.

[0073] like Figure 7 As shown, step ST1 includes a step of configuring a substrate (step ST11), a step of setting a temperature of the substrate (step ST12), a step of generating plasma (step ST13), a step of acquiring the supplied electric power of each heater (step ST14), and a step of calculating reference distribution data (step ST15). In one example, step ST1 can be performed after the first plasma processing apparatus is set up or maintained.

[0074] First, in step ST11, the substrate is arranged on the substrate support part 11. Then, in step ST12, the temperature of the substrate is set. In one example, the control unit 2 controls the control unit 81 arranged to control the substrate 80 so that the temperature of the substrate in each partition 111c becomes the set temperature. In addition, the control unit 2 obtains the electric power supplied to each heater 200 when the temperature of the substrate is stabilized at the set temperature, and stores it in the storage unit 2a2. In addition, the state in which the temperature of the substrate is stabilized at the set temperature after a predetermined time has passed since the substrate was arranged on the substrate support part 11. In addition, the substrate may not be arranged on the substrate support part 11, and the electric power supplied to each heater 200 may be obtained when the temperature of the electrostatic chuck 1111 is stabilized at the set temperature, and stored in the storage unit 2a.

[0075] After the temperature of the substrate is stabilized at the set temperature, in step ST13, plasma is generated in the plasma processing chamber 10 to perform plasma processing on the substrate. The plasma processing is performed based on a processing scheme including a plurality of parameters. The processing scheme may be the same as the processing scheme of the plasma processing (step ST23) performed in the second plasma processing device described later. The parameters of the processing scheme may include the type of processing gas, the flow rate of the processing gas, the frequency, power and duty cycle of the source RF signal, the frequency, power / voltage and duty cycle of the bias signal, the pressure in the plasma processing chamber 10, and the distribution of the magnetic field applied to the plasma processing chamber 10.

[0076] Next, in step ST14, the electric power supplied to the plurality of heaters 200 is acquired. In steps ST13 and ST14, the control unit 2 controls the electric power supplied to each heater 200 so that the temperature of the substrate in each partition 111c becomes the set temperature. Then, in a state where plasma is generated in step ST14, the control unit 2 acquires the electric power supplied to each of the plurality of heaters 200. The control unit 2 can store the electric power supplied to the plurality of heaters 200 acquired in step ST14 in the storage unit 2a.

[0077] Next, in step ST15 , reference distribution data is calculated. The reference distribution data may be distribution data of ion flux generated between the plasma generated in the plasma processing chamber 10 and the substrate.

[0078] The distribution data of the ion flux can be calculated based on the heat flux generated between the substrate disposed on the substrate support part 11 and the plasma generated in the plasma processing chamber 10. For example, when the temperature of the substrate disposed on the substrate support part 11 is constant, the ion flux Γ generated between the substrate and the plasma generated in the plasma processing chamber 10 is i (m -2 s -1 ), where it is related to the heat flux Γ heat (W / m 2 ) can have the following relationship, where the heat flux Γ heat (W / m 2 ) is the heat flux generated between the substrate and the plasma generated in the plasma processing chamber 10.

[0079] Γ i ×Vdc∝Γ heat Formula (1)

[0080] Here, Vdc (V) is a bias voltage (V) generated between the dummy substrate and the plasma. In addition, the heat flux Γ generated between the dummy substrate disposed on the substrate support 11 and the plasma generated in the plasma processing chamber 10 is heat , can be calculated based on the supplied electric power obtained in step ST14. In one example, the heat flux Γ in each partition 111c heat It can be calculated based on the following formula.

[0081] Γ heat =(P0-P htr ) / A Formula (2)

[0082] Here, P0 is the electric power (W) supplied to the heater 200 of the partition 111c in a state where plasma is not generated. That is, P0 is the electric power supplied to the heater 200 of the partition 111c acquired in step ST12. htr is the electric power (W) supplied to the heater 200 of the partition 111c in the state where plasma is generated. htr is the electric power supplied to the heater 200 of the partition 111c acquired in step ST14. As an example, P htr It can be the electric power (W) supplied to the heater 200 of the partition 111c when the electric power (W) becomes substantially constant after the plasma is generated. In addition, A is the area (m 2 ).

[0083] Figure 8 is a diagram showing an example of reference distribution data. The reference distribution data can be obtained in a first plasma processing device that can normally perform plasma processing. Therefore, the reference distribution data can use the ion flux generated between the plasma and the substrate as the reference distribution data. In addition, multiple reference distribution data can be obtained from multiple substrates, and the reference distribution data can be calculated based on the multiple reference distribution data. Figure 8 In addition, the benchmark distribution data includes not only Figure 8 The distribution of ion flux as shown in FIG. 1 also includes various numerical information corresponding to the distribution. In addition, as an example, Figure 8 Calculated distribution data for a substrate having a diameter of 300 mm are shown.

[0084] <Step ST2: Acquiring distribution data in the second plasma processing apparatus>

[0085] Fig. 9: is a flowchart showing an example of step ST2. In step ST2, a substrate is subjected to plasma treatment in a second plasma processing device to obtain distribution data. The second plasma processing device may be a plasma processing device that is an object of adjustment. The second plasma processing device may be a device located in the same factory or production line as the first plasma processing device, or may be a device that performs plasma treatment according to the same treatment scheme as the first plasma processing device. The second plasma processing device may be one or more. As an example, the substrate when obtaining distribution data may be a simulated substrate. The simulated substrate may be a substrate on which no film is formed. The simulated substrate may be, for example, a silicon wafer. In addition, the plasma treatment when obtaining distribution data may include a plasma etching treatment for forming a semiconductor element on the substrate. The plasma treatment may be a plasma treatment performed according to the same treatment scheme as the plasma treatment performed in the above-mentioned first plasma processing device. The substrate may be the same substrate as the substrate used when obtaining the reference distribution data in the above-mentioned first plasma processing device, a substrate having the same structure, or another substrate of the same type.

[0086] like Fig. 9 As shown, step ST2 includes a step of configuring a substrate (step ST21), a step of setting a temperature of the substrate (step ST22), a step of generating plasma (step ST23), a step of acquiring the supplied electric power of each heater (step ST24), and a step of calculating distribution data (step ST25). In one example, step ST2 can be performed after the first plasma processing apparatus is set up or maintained.

[0087] First, in step ST21, the substrate is arranged on the substrate support part 11. Then, in step ST22, the temperature of the substrate is set. In one example, the control part 2 controls the control part 81 arranged to control the substrate 80 so that the temperature of the substrate in each partition 111c becomes the set temperature. The set temperature may be the same set temperature as the above-mentioned step SR12 in the first plasma processing device. In addition, the control part 2 obtains the electric power supplied to each heater 200 when the temperature of the substrate is stabilized at the set temperature, and stores it in the storage part 2a2. In addition, the state after a predetermined time has passed since the substrate was arranged on the substrate support part 11 can be regarded as the state in which the temperature of the substrate is stabilized at the set temperature. In addition, the substrate may not be arranged on the substrate support part 11, but the electric power supplied to each heater 200 may be obtained when the temperature of the electrostatic chuck 1111 is stabilized at the set temperature, and stored in the storage part 2a.

[0088] After the temperature of the substrate is stabilized at the set temperature, in step ST23 , plasma is generated in the plasma processing chamber 10 to perform plasma processing on the substrate.

[0089] Next, in step ST24, the electric power supplied to the plurality of heaters 200 is acquired. In steps ST23 and ST24, the control unit 2 controls the electric power supplied to each heater 200 so that the temperature of the substrate in each partition 111c becomes the set temperature. Then, in a state where plasma is generated in step ST24, the control unit 2 acquires the electric power supplied to each of the plurality of heaters 200. The control unit 2 can store the electric power supplied to the plurality of heaters 200 acquired in step ST24 in the storage unit 2a2.

[0090] Next, in step ST25, distribution data is calculated. The distribution data may be distribution data of ion flux generated between the plasma generated in the plasma processing chamber 10 and the substrate. The distribution data of the ion flux may be calculated based on equations (1) and (2) described in step ST15.

[0091] Fig.10 is a graph showing an example of distribution data. As an example, Fig.10 The distribution data shown is obtained after the second plasma processing device is set up or maintained. The distribution data in the second plasma processing device is obtained by plasma processing with the same processing scheme as the reference distribution data in the first plasma processing device, and thus can be data reflecting the difference between the first plasma processing device and the second plasma processing device. In addition, as an example, Figure 8 Calculated distribution data for a substrate having a diameter of 300 mm are shown.

[0092] <Step ST3: Adjusting the Second Plasma Processing Device>

[0093] Fig.11 1 is a flowchart showing an example of step ST3. In step ST3, the elements capable of adjusting the distribution data in the second plasma processing apparatus are adjusted so that the distribution data acquired in the second plasma processing apparatus approaches the reference distribution data acquired in the first plasma processing apparatus.

[0094] like Fig.11 As shown, step ST3 includes a step of comparing the distribution data in the second plasma processing apparatus with the reference distribution data in the first plasma processing apparatus (ST31), and a step of adjusting the elements of the second plasma processing apparatus that can adjust the distribution data (ST32).

[0095] First, in step ST31, the distribution data in the second plasma processing apparatus is compared with the reference distribution data in the first plasma processing apparatus. If there is a difference of a predetermined value or more between the distribution data and the reference distribution data, step ST32 is performed, and if there is no difference of a predetermined value or more, step ST3 is terminated.

[0096] exist Fig.10 The distribution of ion flux is shown in Figure 8 Compared with the distribution of ion flux shown in FIG30 , the ion flux is higher in the central area and the lower area. Therefore, in step ST32, the elements of the second plasma processing device are adjusted so that the distribution of ion flux in the second plasma processing device is the same as that in the first plasma processing device. The adjusted elements include parameters related to the plasma processing in the second plasma processing device and parameters related to the structure of the second plasma processing device. The parameters related to the plasma processing may include the type of processing gas, the flow rate of the processing gas, the frequency, electric power and duty cycle of the generated source RF signal, the frequency, electric power / voltage and duty cycle of the bias signal, the pressure in the plasma processing chamber 10, and the distribution of the magnetic field applied to the plasma processing chamber 10. The adjusted elements include parameters related to the output adjustment (correction) of the plasma processing device. The output adjustment (correction) of the plasma processing device may include correction of the electric power of the RF signal and the bias signal, correction of the pressure sensor, correction of the pressure regulating valve, and correction of the gas flow controller. Parameters regarding the structure (physical structure) of the device may include the amount of threaded tightening used to mount components of the device to the device body, the gap state between components of the device (adjusted, for example, by gap gauges and shims), the electrical contact state between components of the device (through the contact state of conductive spirals), etc.

[0097] According to an exemplary embodiment of the present invention, the adjustment method includes: (a) a step of acquiring reference distribution data, which is data on the distribution of ion flux generated between the plasma generated in the chamber 10 in the first plasma processing device and the substrate arranged on the substrate support part 11; (b) a step of acquiring distribution data, which is data on the distribution of ion flux generated between the plasma generated in the chamber 10 in the second plasma processing device and the substrate arranged on the substrate support part 11; (c) a step of adjusting the element capable of adjusting the ion flux in the second plasma processing device based on the distribution data acquired in the second plasma processing device and the reference distribution data acquired in the first plasma processing device. According to the exemplary embodiment, the distribution data on the distribution of ion flux can be used as an indicator to correct the device difference between multiple plasma processing devices, so there is no need to change the parameters of the plasma processing device based on empirical rules. As a result, the time required for the coordination of multiple plasma processing devices can be reduced and the accuracy of the coordination can be improved.

[0098] According to the exemplary embodiment of the present invention, it is possible to reduce the unevenness of the distribution of ion fluxes generated between a plurality of plasma processing apparatuses, thereby reducing the unevenness between the apparatuses in plasma processing.

[0099] Fig.12 is a flow chart showing an exemplary embodiment of the present method. Fig.12 As shown, the method may further include a step of generating a data table (ST0). That is, the method includes a step of generating a data table (ST0), a step of acquiring reference distribution data in a first plasma processing device (ST1), a step of acquiring distribution data in a second plasma processing device (ST2), and a step of adjusting the second plasma processing device (ST3).

[0100] <Step ST1: Generate data table>

[0101] Fig.13 is a flowchart showing an example of step ST0. The data table generated in step ST0 may be a data table stored in association with the change in the element capable of adjusting the distribution of the ion flux and the change in the distribution of the ion flux generated according to the change. In addition, the element capable of adjusting the distribution of the ion flux may include one or more parameters related to plasma generation. In one example, the parameter may be a parameter capable of changing the distribution of the electron density generated in the plasma processing chamber 10, such as the magnetic flux density of the magnetic field applied to the plasma processing chamber 10. As an example, the plasma processing apparatus 1 may have a plurality of electromagnets configured to apply a magnetic field to the plasma processing chamber 10 (see Fig.14), in which case the parameter may be, for example, the current and / or voltage supplied to the plurality of electromagnets.

[0102] like Fig.13 As shown, step ST0 includes the steps of configuring the simulated substrate (ST01), setting the temperature of the simulated substrate (ST02), setting the parameters of the plasma processing (ST03), generating plasma (ST04), obtaining the supplied electric power of each heater (ST05), confirming the acquisition of the supplied electric power (ST06), and generating a data table (ST07). In one example, step ST0 can be performed after the plasma processing device 1 is set up or maintained. Step ST0 can be performed in the first plasma processing device, in the second plasma processing device, or in other plasma processing devices.

[0103] First, in step ST01, the simulation substrate is arranged on the substrate support part 11. In one example, the simulation substrate can be a substrate without a film formed thereon. The simulation substrate can be, for example, a silicon wafer. Next, in step ST02, the temperature of the simulation substrate is set. In one example, the control unit 2 controls the control unit 81 arranged on the control substrate 80 so that the temperature of the simulation substrate in each partition 111c becomes a set temperature. In addition, the control unit 2 obtains the electric power supplied to each heater 200 and stores it in the storage unit 2a2 when the temperature of the simulation substrate is stabilized at the set temperature. In addition, the temperature of the simulation substrate can also be regarded as being stabilized at the set temperature when a specified time has passed since the simulation substrate was arranged on the substrate support part 11.

[0104] In addition, when the dummy substrate is not arranged on the substrate support part 11 and the temperature of the electrostatic chuck 1111 is stabilized at a set temperature, the electric power supplied to each heater 200 can be obtained and stored in the storage part 2a.

[0105] After the temperature of the dummy substrate is stabilized at the set temperature, in step ST03, parameters for plasma treatment of the dummy substrate are set. The parameters may be the same as the parameters for plasma treatment performed on the substrate in steps ST1 and ST2. The plasma treatment may include plasma etching for forming semiconductor elements on the dummy substrate and the process substrate.

[0106] The parameters of the plasma processing may include the type of processing gas, the flow rate of the processing gas, the frequency, power and duty cycle of the generated source RF signal, the frequency, power / voltage and duty cycle of the bias signal, the pressure in the plasma processing chamber 10, and the distribution of the magnetic field applied to the plasma processing chamber 10. Then, in step ST04, plasma is generated and the plasma processing is performed on the dummy substrate.

[0107] Next, in step ST05, the electric power supplied to the plurality of heaters 200 is acquired. In step ST04 and step ST05, the control unit 2 can control the electric power supplied to each heater 200 so that the temperature of the substrate in each partition 111c becomes the set temperature. Moreover, the control unit 2 acquires the electric power supplied to each of the plurality of heaters 200 in a state where plasma is generated in the plasma processing chamber 10. The control unit 2 can store the supplied electric power supplied to the plurality of heaters 200 acquired in step ST05 in the storage unit 2a in association with one or more parameters of plasma processing. In the present embodiment, the parameter can be a parameter that can change the distribution of the electron density generated in the plasma processing chamber 10.

[0108] Next, in step ST06, it is determined whether the supplied electric power supplied to the plurality of heaters 200 is obtained under all conditions under which the parameters are changed. When it is determined that the supplied electric power supplied to the plurality of heaters 200 is not obtained under all conditions (step ST06: No), the process returns to step ST03, and the control unit 2 changes one or more parameters to generate plasma (step ST04). The parameter may be a parameter that changes the distribution of the electron density generated in the plasma processing chamber 10. In one example, the parameter may be the magnetic flux density of the magnetic field applied to the plasma processing chamber 10. Then, in a state in which plasma is generated according to the parameters newly set in step ST03, the electric power supplied to each of the plurality of heaters 200 is re-obtained (step ST05). The control unit 2 can store the supplied electric power supplied to the plurality of heaters 200 obtained in step ST05 in the storage unit 2a2 in association with one or more parameters.

[0109] In addition, when it is determined that the electric power supplied to the plurality of heaters 200 is obtained under all conditions under which the parameters are changed (step ST06: Yes), the control unit 2 stops the plasma processing. Then, in step ST07, the control unit 2 generates a data table based on the values ​​of the parameters stored in the storage unit 2a2 and the electric power supplied to the plurality of heaters 200. The data table may be a data table that associates the amount of change in the parameter in the plasma processing performed in step ST04 with the amount of change in the distribution of the ion flux generated according to the change. In addition, the distribution data of the ion flux may be calculated based on the equations (1) and (2) described in step ST15.

[0110] In addition, in the data table generated in step ST07, the parameter stored in association with the change in ion flux may be the change in magnetic flux density of the magnetic field applied to the plasma, or the change in current and / or voltage supplied to the electromagnet generating the magnetic field. Here, when the temperature of the substrate is constant, the ion flux Γ generated between the substrate and the plasma is i The electron density in the plasma can have a relationship based on the following equation.

[0111] Γ i ∝n e ×(Vdc) 1 / 2 Formula (3)

[0112] Here, n e is the electron density in the plasma (m -3 ). In addition, Vdc is a bias voltage (V) generated between the substrate and the plasma. In addition, the electron density in the plasma and the magnetic flux density of the magnetic field applied to the plasma have a relationship based on the following formula.

[0113] n e ∝H formula (4)

[0114] Here, H is the magnetic flux density (G). Thus, the distribution of the magnetic flux density applied to the plasma can be changed, and the distribution of the ion flux generated between the plasma and the substrate can be changed. Thus, in step ST07, as an example, the control unit 2 can generate a data table that associates the amount of change in the distribution of the magnetic flux density of the magnetic field applied to the plasma with the amount of change in the distribution of the ion flux.

[0115] In addition, in the data table generated in step ST07, the parameter stored in association with the change amount of the ion flux may be a parameter that can change the distribution of the bias voltage generated between the substrate W disposed on the substrate support 11 and the plasma generated in the plasma processing chamber 10. Here, when the temperature of the substrate is constant, the ion flux Γ generated between the substrate and the plasma is iWith respect to the bias voltage (V) generated between the substrate and / or the ring assembly 112 and the plasma, the relationship of the above formula (3) can be achieved. As a result, the distribution of the bias voltage Vdc can be changed, so that the distribution of the ion flux generated between the plasma and the substrate can be changed. In this way, in step ST07, as an example, the control unit 2 can generate a data table that associates the change in the distribution of the bias voltage with the change in the distribution of the ion flux. In addition, in step ST07, as an example, the control unit 2 can generate a data table that associates the change in the voltage applied to the ring assembly 112 with the change in the distribution of the ion flux. In addition, in step ST07, as an example, the control unit 2 can generate a data table that associates the change in the height of the ring assembly 112 with the change in the distribution of the ion flux.

[0116] Step ST1 and step ST2 may be the same as those in the above-described exemplary embodiment.

[0117] In step ST3 , when adjusting the second plasma processing apparatus, the elements in the second plasma processing apparatus are adjusted based on the difference between the reference distribution data and the distribution data, with reference to the data table created in step ST0 .

[0118] exist Fig.10 An example of the distribution of ion flux is shown, with Figure 8 Compared with the example of the distribution of ion flux shown in FIG. 1 , the ion flux is higher in the central area and the lower area. Therefore, in step ST3, the correction value of the element capable of adjusting the distribution data in the second plasma processing device is calculated based on the reference distribution data and the distribution data, so that the distribution of the ion flux in the second plasma processing device is the same as that in the first plasma processing device. The correction value of the element may be the difference between the reference distribution data and the distribution data. The correction value of the element may be calculated by the control unit 2 of the second plasma processing device, or by the control unit 2 of the first plasma processing device, or by a server connected to the plasma processing device via a network, and sent from the server to the control unit 2 of the second plasma processing device to be adjusted. Moreover, the control unit 2 refers to the change in the distribution of the ion flux corresponding to the correction value in the data table stored in the storage unit 2a2 in step ST0. Moreover, the control unit 2 sets and adjusts the parameters for correcting the distribution of the ion flux based on the change in the parameter corresponding to the change in the distribution of the ion flux contained in the data table. In one example, the parameter may be the magnetic flux density of the magnetic field applied to the plasma or the current and / or voltage supplied to the electromagnet generating the magnetic field.

[0119] In addition, in the above step ST3, the correction value is calculated based on the reference distribution data and the distribution data, but the calculation method of the correction value is not limited to this. In one example, the data obtained in the plasma processing of step ST1 and step ST2 can also be stored, and based on the stored data, the parameters in the plasma processing are corrected to correct the distribution of the ion flux. The stored data may include the parameters of the plasma processing, the power supplied to the heater, the temperature of the heater, the distribution of the heat flux, the distribution of the ion flux, the type and structure of the substrate, etc.

[0120] <Other embodiments of plasma processing apparatus 1>

[0121] Fig.14 1 is a diagram for explaining another structural example of a plasma processing apparatus. In one embodiment, the plasma processing apparatus 1 may include an electromagnet assembly 3 including one or more electromagnets 45. The electromagnet assembly 3 is configured to generate a magnetic field in the chamber 10. In one embodiment, the plasma processing apparatus 1 includes an electromagnet assembly 3 including a plurality of electromagnets 45. Fig.14 In the illustrated embodiment, the plurality of electromagnets 45 include electromagnets 46 to 49. The plurality of electromagnets 45 are disposed on or above the chamber 10. That is, the electromagnet assembly 3 is disposed on or above the chamber 10. Fig.14 In the example shown, a plurality of electromagnets 45 are disposed on the shower head 13 .

[0122] Each of the one or more electromagnets 45 includes a coil. Fig.14 In the example shown, the electromagnets 46 to 49 include coils 61 to 64. The coils 61 to 64 are wound around the central axis Z. The central axis Z may be an axis passing through the center of the substrate W or the substrate support 11. That is, in the electromagnet assembly 3, the coils 61 to 61 may be annular coils. The coils 61 to 64 are coaxially arranged at the same height position with the central axis Z as the center.

[0123] The electromagnet assembly 3 also includes a bobbin 50 (or a yoke). Coils 61 to 64 are wound around the bobbin 50 (or a yoke). The bobbin 50 is formed, for example, of a magnetic material. The bobbin 50 has a columnar portion 51, a plurality of cylindrical portions 52 to 55, and a base portion 56. The base portion 56 has a substantially disc shape, and its central axis coincides with the central axis Z. The columnar portion 51 and the plurality of cylindrical portions 52 to 55 extend downward from the lower surface of the base portion 56. The columnar portion 51 has a substantially cylindrical shape, and its central axis coincides with the central axis Z. The radius of the columnar portion 51 is, for example, 30 mm. The cylindrical portions 52 to 55 extend radially outside the columnar portion 51 relative to the central axis Z.

[0124] The coil 61 is wound along the outer circumference of the columnar portion 51 and is housed in the groove between the columnar portion 51 and the cylindrical portion 52. The coil 62 is wound along the outer circumference of the cylindrical portion 52 and is housed in the groove between the cylindrical portion 52 and the cylindrical portion 53. The coil 63 is wound along the outer circumference of the cylindrical portion 53 and is housed in the groove between the cylindrical portion 53 and the cylindrical portion 54. The coil 64 is wound along the outer circumference of the cylindrical portion 54 and is housed in the groove between the cylindrical portion 54 and the cylindrical portion 55.

[0125] Each coil included in the one or more electromagnets 45 is connected to the current source 65. Supply and stop of current from the current source 65 to each coil included in the one or more electromagnets 45, the direction of the current, and the current value are controlled by the control unit 2. In addition, when the plasma processing apparatus 1 is provided with a plurality of electromagnets 45, each coil of the plurality of electromagnets 45 may be connected to one current source, or may be individually connected to different current sources.

[0126] The one or more electromagnets 45 form a magnetic field in the chamber 10 that is symmetrical about the central axis Z. By controlling the current supplied to each of the one or more electromagnets 45, the intensity distribution (or magnetic flux density) of the magnetic field can be adjusted in the radial direction relative to the central axis Z. Thus, the plasma processing apparatus 1 adjusts the radial distribution of the density of the plasma generated in the chamber 10. Fig.14 Other structures, operations and / or functions of the plasma processing device 1 shown may be different from those of Figure 2 The plasma processing apparatus 1 described in the illustrated example is the same.

[0127] The embodiments of the present invention also include the following aspects.

[0128] (Note 1)

[0129] A method of regulation, comprising:

[0130] (a) in a first plasma processing apparatus having a first chamber and a first substrate support disposed in the first chamber, a step of acquiring reference distribution data, the reference distribution data being data on distribution of ion flux generated between plasma generated in the first chamber and a substrate disposed on the first substrate support;

[0131] (b) in a second plasma processing apparatus having a second chamber and a second substrate support portion disposed in the second chamber, a step of acquiring distribution data on a distribution of ion fluxes generated between plasma generated in the second chamber and a substrate disposed on the second substrate support portion; and

[0132] (c) A step of adjusting a factor capable of adjusting the ion flux in the second plasma processing apparatus based on the distribution data acquired in the second plasma processing apparatus and the reference distribution data acquired in the first plasma processing apparatus.

[0133] (Note 2)

[0134] According to the adjustment method described in Appendix 1,

[0135] The above step (a) includes:

[0136] (a-1) a step of placing the substrate on the first substrate support portion;

[0137] (a-2) generating plasma in the first chamber to perform plasma treatment on the substrate;

[0138] (a-3) supplying electric power to each of the plurality of first heaters disposed in the first substrate supporting portion;

[0139] (a-4) a step of obtaining electric power supplied to each of the plurality of first heaters in a state where plasma is generated in the first chamber; and

[0140] (a-5) A step of calculating the reference distribution data based on the electric power acquired for each of the plurality of first heaters in the step (a-4).

[0141] (Note 3)

[0142] The adjustment method according to Appendix 1 or 2, wherein:

[0143] The above step (b) includes:

[0144] (b-1) a step of placing the substrate on the second substrate support portion;

[0145] (b-2) generating plasma in the second chamber to perform plasma treatment on the substrate;

[0146] (b-3) supplying electric power to each of the plurality of second heaters disposed in the second substrate supporting portion;

[0147] (b-4) obtaining electric power supplied to each of the plurality of second heaters in a state where plasma is generated in the second chamber; and

[0148] (b-5) A step of calculating the distribution data based on the electric power acquired for each of the plurality of second heaters in the step (b-4).

[0149] (Note 4)

[0150] The adjustment method according to any one of Supplements 1 to 3, wherein:

[0151] The element in the step (c) includes at least any one of a parameter related to the plasma processing in the second plasma processing apparatus and a parameter related to the structure of the second plasma processing apparatus.

[0152] (Note 5)

[0153] The adjustment method according to any one of Supplements 1 to 4, wherein:

[0154] The method further includes the step of (d) creating a data table that associates the amount of change in the distribution of the ion flux with the amount of change in the element capable of adjusting the distribution of the ion flux.

[0155] The step (c) adjusts the elements in the second plasma processing apparatus by referring to the data table prepared in the step (d) based on the difference between the reference distribution data and the distribution data.

[0156] (Note 6)

[0157] According to the adjustment method described in Appendix 5,

[0158] The amount of change in the above-mentioned element includes the amount of change in the distribution of the electron density of the above-mentioned plasma.

[0159] (Note 7)

[0160] According to the adjustment method described in Appendix 2,

[0161] The first substrate supporting portion has a first substrate supporting surface for supporting the substrate.

[0162] The first substrate supporting surface comprises a plurality of first supporting areas.

[0163] The plurality of first heaters are respectively arranged on the first substrate supporting portion in each of the plurality of first supporting regions.

[0164] (Note 8)

[0165] According to the adjustment method described in Appendix 3,

[0166] The second substrate supporting portion has a second substrate supporting surface for supporting the substrate.

[0167] The second substrate supporting surface comprises a plurality of second supporting areas.

[0168] The plurality of second heaters are respectively arranged on the second substrate supporting portion in each of the plurality of second supporting regions.

[0169] (Note 9)

[0170] A plasma processing device, wherein:

[0171] The invention comprises a chamber, a substrate support unit and a control unit arranged in the chamber,

[0172] The control unit performs the following processing:

[0173] (a) obtaining reference distribution data obtained in another plasma processing apparatus different from the plasma processing apparatus, wherein the reference distribution data is data on the distribution of ion flux generated between plasma generated in another chamber of the other plasma processing apparatus and a substrate disposed on another substrate support portion,

[0174] (b) acquiring distribution data in the plasma processing apparatus, the distribution data being data on distribution of ion flux generated between the plasma generated in the chamber and the substrate disposed on the substrate support portion,

[0175] (c) adjusting a factor capable of adjusting the ion flux in the plasma processing apparatus based on the distribution data acquired in the plasma processing apparatus and the reference distribution data acquired in the other plasma processing apparatus.

[0176] The above embodiments are described for illustration and are intended to limit the scope of the present invention. The above embodiments can be variously modified without departing from the scope and gist of the present invention. For example, a part of the components in one embodiment can be added to other embodiments. In addition, a part of the components in one embodiment can be replaced with corresponding components of other embodiments.

[0177] Description of Reference Numerals

[0178] 1... plasma processing device, 2... control unit, 10... plasma processing chamber, 10a... side wall, 10b... bottom wall, 10s... plasma processing space, 11... substrate supporting unit, 12... plasma generating unit, 70... electric power supply unit, 73... wiring, 75... wiring, 81... control unit, 82... supply unit, 83... measuring unit, 111c... partition, 112... ring assembly, 200... heater, 201... resistor, 1110... base, 1110a... flow path, 1111... electrostatic suction cup, 1111a... ceramic component, 1111b... electrostatic electrode.

Claims

1. A method of regulation, characterized in that: include: (a) in a first plasma processing apparatus having a first chamber and a first substrate support portion disposed in the first chamber, a step of acquiring reference distribution data, the reference distribution data being data on distribution of ion flux generated between plasma generated in the first chamber and a substrate disposed on the first substrate support portion; (b) in a second plasma processing apparatus having a second chamber and a second substrate support portion disposed in the second chamber, a step of acquiring distribution data, the distribution data being data on distribution of ion flux generated between plasma generated in the second chamber and a substrate disposed on the second substrate support portion; and (c) A step of adjusting a factor capable of adjusting the ion flux in the second plasma processing apparatus based on the distribution data acquired in the second plasma processing apparatus and the reference distribution data acquired in the first plasma processing apparatus.

2. The adjustment method according to claim 1, characterized in that: The step (a) comprises: (a-1) a step of placing the substrate on the first substrate supporting portion; (a-2) generating plasma in the first chamber to perform plasma treatment on the substrate; (a-3) supplying electric power to each of the plurality of first heaters disposed in the first substrate supporting portion; (a-4) a step of obtaining electric power supplied to each of the plurality of first heaters in a state where plasma is generated in the first chamber; and (a-5) A step of calculating the reference distribution data based on the electric power acquired for each of the plurality of first heaters in the step (a-4).

3. The adjustment method according to claim 1, characterized in that: The step (b) comprises: (b-1) a step of placing the substrate on the second substrate supporting portion; (b-2) generating plasma in the second chamber to perform plasma treatment on the substrate; (b-3) supplying electric power to each of the plurality of second heaters disposed in the second substrate supporting portion; (b-4) a step of obtaining electric power supplied to each of the plurality of second heaters in a state where plasma is generated in the second chamber; and (b-5) A step of calculating the distribution data based on the electric power acquired for each of the plurality of second heaters in the step (b-4).

4. The adjustment method according to claim 1, characterized in that: The elements in the step (c) include at least any one of a parameter related to the plasma processing in the second plasma processing apparatus and a parameter related to the structure of the second plasma processing apparatus.

5. The adjustment method according to claim 1, characterized in that: The method further comprises the step of (d) creating a data table associating the amount of change in the distribution of the ion flux with the amount of change in the element capable of adjusting the distribution of the ion flux. The step (c) adjusts the elements in the second plasma processing apparatus by referring to the data table created in the step (d) based on the difference between the reference distribution data and the distribution data.

6. The adjustment method according to claim 5, characterized in that: The amount of change in the element includes an amount of change in the distribution of the electron density of the plasma.

7. The adjustment method according to claim 2, characterized in that: The first substrate supporting portion has a first substrate supporting surface for supporting a substrate, The first substrate supporting surface comprises a plurality of first supporting areas, The plurality of first heaters are respectively arranged on the first substrate supporting portion in each of the plurality of first supporting regions.

8. The adjustment method according to claim 3, characterized in that: The second substrate supporting portion has a second substrate supporting surface for supporting the substrate, The second substrate supporting surface comprises a plurality of second supporting areas, The plurality of second heaters are respectively arranged on the second substrate supporting portion in each of the plurality of second supporting regions.

9. A plasma processing device, characterized in that: The invention comprises a chamber, a substrate support unit and a control unit arranged in the chamber, The control unit performs the following processing: (a) obtaining reference distribution data obtained in another plasma processing apparatus different from the plasma processing apparatus, wherein the reference distribution data is data on the distribution of ion flux generated between plasma generated in another chamber of the other plasma processing apparatus and a substrate disposed on another substrate support portion, (b) acquiring distribution data in the plasma processing apparatus, the distribution data being data on distribution of ion flux generated between the plasma generated in the chamber and the substrate disposed on the substrate support portion, (c) adjusting a factor capable of adjusting the ion flux in the plasma processing apparatus based on the distribution data acquired in the plasma processing apparatus and the reference distribution data acquired in the other plasma processing apparatus.

Images