Power module package with molded vias and dual-sided crimp pins

Abstract

A module includes an assembly of a semiconductor device die (110), a lead frame (120, 130) connected to the semiconductor device die, and a substrate (112) connected to the lead frame. The substrate includes at least one plated through hole (PTH) (172). A mold body (150) encapsulates the assembly. The mold body includes a molded via (TMV) (160) aligned with a portion of the substrate that includes the at least one PTH. The PTH is exposed in the TMV in an environment external to the motif, and physical contact can be made through the TMV from the outside of the motif.

Description

[0001] Related Applications

[0002] This application claims priority to and the benefit of U.S. patent application No. 18 / 056,442, filed on November 17, 2022, which is hereby incorporated by reference in its entirety. Technical Field

[0003] The present disclosure relates to power devices and circuits. More particularly, the present disclosure relates to power device modules or packages. Background Art

[0004] Power device packages are used in many power electronic circuits (e.g., power electronic circuits for household appliances, the automotive industry, and other industrial applications). An example power device package may include one or more semiconductor device dies encapsulated in a molding material within a housing. The semiconductor device die may be electrically coupled to a lead frame that forms an external power terminal of the power device package. The power device package may also include a set of signal leads and a set of power leads extending from the housing. The set of signal leads and the set of power leads extending from the housing may be soldered to or coupled to an external substrate (e.g., a printed circuit board (PCB) of a host power electronic circuit) using crimp pins. Summary of the invention

[0005] In a general aspect, a module includes an assembly of a semiconductor device die, a lead frame connected to the semiconductor device die, and a substrate connected to the lead frame. The substrate includes at least one plated through hole (PTH). A mold body encapsulates the assembly. The mold body includes a molded through hole (TMV) aligned with a portion of the substrate including the at least one PTH. The PTH is exposed to an environment outside the mold body in the TMV, and physical contact can be made from outside the mold body through the TMV.

[0006] In a general aspect, a module includes a power device encapsulated in a mold body and a press-fit pin coupler disposed outside the mold body. The press-fit pin coupler is electrically connected to the power device encapsulated in the mold body.

[0007] In a general aspect, a method includes forming an assembly including a semiconductor device die, at least one lead frame connected to the semiconductor device die, and a substrate connected to the lead frame. The substrate includes at least one plated through hole (PTH). The method also includes packaging the assembly in a mold body having a molded via (TMV) aligned with a portion of the substrate including the at least one plated through hole (PTH). The PTH is exposed to an environment outside the mold body in the TMV and can be physically contacted from outside the mold body through the TMV. BRIEF DESCRIPTION OF THE DRAWINGS

[0008] Figure 1A A power module including a press-fit pin coupler is illustrated in cross-section.

[0009] Figure 1B The top view shows Figure 1A of power modules.

[0010] Figure 1C The cross-sectional view illustrates Figure 1A A power module in which a crimp pin is inserted into a crimp pin coupler.

[0011] Figure 2A and Figure 2B An individual press-fit pin and a group of press-fit pins in a package are illustrated respectively.

[0012] Figure 3 An example method for assembling a power module having press-fit pins as external signal or power leads is illustrated.

[0013] Figure 4 An example method for assembling a power module having press-fit pins as external signal or power leads is illustrated.

[0014] FIG. 5A to FIG. 5G The power module is schematically illustrated in different stages of construction.

[0015] Figure 5H Example pins disposed in molded through vias (TMVs) to form signal leads or power leads of a power module are illustrated.

[0016] Figure 6 A power module attached to an external substrate is schematically illustrated.

[0017] In the drawings that are not necessarily drawn to scale, similar reference symbols may indicate similar and / or similar parts (elements, structures, etc.) in different views. The drawings illustrate various specific implementations discussed in the present disclosure by way of example and not limitation. Reference symbols shown in one drawing may not be repeated for the same and / or similar elements in the same view or related views. Reference symbols repeated in multiple figures may not be specifically discussed with respect to each of the figures in these figures, but are provided for context between related views. In addition, not all similar elements in the drawings are specifically referenced by reference symbols when multiple instances of the element are illustrated in a given view. DETAILED DESCRIPTION

[0018] As newer electronic applications (eg, automotive or other applications) emerge, performance requirements (eg, size, electrical, thermal, mechanical, reliability and fatigue, external connections, and assembly requirements) for power modules used to power the host electronic applications may become increasingly demanding.

[0019] The present disclosure describes a power module including a press-fit pin coupler or connector located within the power module. The power module may include at least one power device die (e.g., an insulated gate bipolar transistor (IGBT), a power metal oxide semiconductor field effect transistor (MOSFET), etc.) encapsulated in a housing or body made of a molding material (e.g., an epoxy molding compound (EMC)). The power device die may be electrically connected to a lead frame that extends through the mold body to the outside of the housing to form, for example, an external power terminal or an external ground terminal of the power module.

[0020] A crimp pin coupler or connector (hereinafter referred to as a crimp pin coupler) is disposed in an opening in a mold body or through an opening in a mold body (e.g., disposed through a molded through hole (TMV) in the mold body). The crimp pin coupler may include a crimp pin receiving hole configured to receive an end of at least one crimp pin through an opening (TMV) in the mold body and electrically connect the crimp pin to a power device die. The crimp pin receiving hole is not covered by molding material, but is exposed to the environment outside the mold body in the TMV and is able to make physical contact freely from outside the mold body through the TMV. The crimp pins may form, for example, signal leads, power leads, or other terminals (e.g., motor terminals) of a power module.

[0021] The crimp pin may, for example, include a shaft (e.g., a cylindrical shaft) having a first end. The first end may be sized equal to or greater than a size of a crimp pin receiving hole to create a friction fit or interference fit when the first end of the crimp pin is inserted into the hole. In some implementations, the crimp pin may be a double-sided crimp pin having a first end and a second end. The first end may be received in a crimp pin coupler of a power module to electrically connect the crimp pin to a power device die, and the second end may be used to connect the power module to (or mount the power module on) a substrate (e.g., a printed circuit board) of a host electronic application (e.g., an automotive circuit application).

[0022] Using press-fit pins with a press-fit pin coupler enables reliable, solderless mounting of a power module on a substrate of a host electronic application while reducing the risk of stress-induced mechanical damage (e.g., cracking) to, for example, an epoxy molding compound used to encapsulate the semiconductor device die in the power module.

[0023] In an example implementation, the press-fit pin coupler may be a resilient substrate or board (e.g., a printed circuit board) having at least one plated through hole (PTH) therethrough. The at least one plated through hole (PTH) may be adapted to receive a press-fit pin to establish an electrical connection with a lead frame in a power module. Insertion (or removal) of the press-fit pin in the PTH may cause mechanical stress (insertion stress). The resiliency of the substrate or board may help prevent or reduce the propagation of stress caused by the pin insertion through the body of the power module, and thus reduce the risk of cracking or other damage to the body of the power module.

[0024] Figure 1A and Figure 1B A cross-sectional view and a top view, respectively, of an example power module 100 including a crimp pin coupler 145 according to the principles of the present disclosure are shown. Figure 1C A cross-sectional view of the power module 100 is shown with a crimp pin (eg, crimp pin 170 ) inserted into the crimp pin coupler 145 .

[0025] The power module 100 may include, for example, at least one semiconductor device die 110 encapsulated in a mold body 150. The power module 100 may also include, for example, at least one pair of lead frames (e.g., lead frame 120 and lead frame 130) that may be connected to the semiconductor device die 110 and extend out of the mold body as an external terminal of the power module 100. The lead frame 130 may include, for example, two portions (e.g., lead frame portion 130a and lead frame portion 130b) separated by a molded through hole (TMV) (e.g., TMV 160). The TMV 160 may, for example, extend from a top surface T to a bottom surface B of the mold body 150.

[0026] In an example implementation, a semiconductor device die 110 (e.g., a power device) may be disposed on a substrate 112 (e.g., a double-sided bonded metal (DBM) substrate). The substrate 112 may, for example, include a thermally conductive ceramic tile 112b disposed between a conductive layer 112c and a conductive layer 112a (e.g., a metal layer). The semiconductor device die 110 and the lead frame 120 may be attached to the conductive layer 112c by an adhesive layer (e.g., a first adhesive layer 114 and a second adhesive layer 114, respectively) (e.g., solder or conductive epoxy). In addition, wire bonds (e.g., wire bonds 116) may connect the semiconductor device die 110 to the conductive layer 112c and to a discontinuous portion of the lead frame 130 (e.g., lead frame portion 130a).

[0027] As shown in the figure, for example Figure 1A , Figure 1B and Figure 1C, a crimp pin coupler 145 may be disposed on TMV 160. The crimp pin coupler 145 may include a resilient substrate or board (e.g., a printed circuit board) (e.g., board 140) having at least one plated through hole (PTH) (e.g., hole 162) therethrough. Hole 162 may, for example, have a diameter D. The PTH (e.g., hole 162) is not covered by the molding material, but is exposed to the environment (surrounding environment) outside the mold body in TMV 160 and can be physically contacted from outside the mold body through the TMV. At least one plated through hole (PTH) (e.g., hole 162) may be adapted to receive a crimp pin (e.g., crimp pin 170, Figure 1C ). The crimp pins can form, for example, signal leads, power leads or other terminals (for example, motor terminals) of a power module.

[0028] In an example implementation, the crimp pin coupler 145 / board 140 may be a flat laminate composite material made of a non-conductive substrate material (e.g., fiberglass, plastic, or epoxy material). A metal layer (e.g., copper or a copper alloy) may be disposed on a top surface (e.g., surface tb) of the board 140 surrounding the hole 162, a side wall (e.g., side wall sw) of the hole 162, and a bottom surface (e.g., surface tb) of the board 140 surrounding the hole 162. For example, the metal layer 142 may be plated or deposited on the surface bb of the board 140, the metal layer 144 may be plated or deposited on the surface tb of the board 140, and the metal layer 146 may be plated or deposited on the side wall sw of the hole 162 in the board 140. In an example implementation, some of the metal layers disposed on the board 140 may be attached to the lead frame 130. For example, metal layer 142 on the bottom surface (e.g., surface tb) of plate 140 surrounding hole 162 can be attached to lead frame portion 130a (on the left side L of hole 162) and lead frame portion 130b (on the right side R of hole 162) via a conductive layer (e.g., solder or conductive epoxy).

[0029] In an example implementation, the power module 100 may include several lead frames (e.g., lead frame 120 and lead frame 130) that may be connected to the semiconductor device die 110 and extend out of the die body as external terminals of the power module 100. Correspondingly, the press-fit pin coupler 145 / plate 140 may include several plated through holes (PTHs) (e.g., hole 162) that are suitable for press-fit pins (e.g., press-fit pin 170, Figure 1C ) to form a number of signal leads or power leads of the power module 100 that are electrically connected to the number of lead frames. In some implementations, a number of plated through holes (PTHs) (e.g., holes 162) can be aligned with corresponding cutouts or openings (e.g., openings 132) in the lead frame 130. Figure 1BA press-fit pin coupler 145 / plate 140 is shown, for example, disposed in TMV 160, having several (e.g., three) plated through holes (PTHs) (e.g., holes 162) adapted to receive press-fit pins. Plate 140 is disposed over lead frame 130, and holes 162 may be aligned with cutouts, holes, or openings (e.g., opening 132) in lead frame 130.

[0030] A crimp pin (e.g., crimp pin 170, inserted into hole 162) Figure 1C ) may form a signal lead or a power lead of the power module 100. The press-fit pin 170 is electrically connected to the lead frame 130 by press-fitting (ie, mechanically contacting) with the metal layer 146 plated or deposited on the sidewall sw of the hole 162 in the board 140.

[0031] For example, Figure 1C A crimp pin (e.g., crimp pin 170) is shown inserted into hole 162 of board 140 to form a signal lead or a power lead of power module 100. Crimp pin 170 may be made of, for example, a metal or a metal alloy (e.g., brass, copper, copper telluride, etc.). Crimp pin 170 may be, for example, a double-sided crimp pin having a first end 172 and a second end 174. The two ends (e.g., first end 172 and second end 174) may be, for example, structures having a compressible width. For example, first end 172 may be a pin-eye type structure having a (compressible) width W. Width W may be the same as (or slightly larger than) a diameter D of a plated through hole (PTH) (e.g., hole 162). Inserting the first end 172 tightly into a slightly smaller hole (e.g., hole 162) can result in a compression fit (also referred to as an interference fit or friction fit) fastening of the press-fit pin 170 with the metal layer 146 plated or deposited on the side wall sw of the hole 162 in the board 140. This solder-free fastening of the first end 172 and the metal layer 146 can be achieved by normal force of the contacting surfaces, friction, and cold welding.

[0032] In an example implementation, a crimp pin (e.g., Figure 1C The second end portion (e.g., second end portion 174) of the crimp pin 170 can be used to mount (e.g., crimp) the power module 100 in a host electronic application (e.g., an automotive circuit application) ( Figure 6 ) on a substrate (e.g., a printed circuit board).

[0033] In some example implementations, the crimp pin coupler 145 / plate 140 ( Figure 1B ) can be assembled by inserting individual single pins (e.g., individual double-sided press-fit pins) one by one into several plated through holes (PTHs) (e.g., holes 162) in board 140. For example, Figure 2AA single individual crimp pin (e.g., crimp pin 170) is shown. In some other example implementations, assembly of crimp pins in crimp pin coupler 145 / board 140 may be accomplished by simultaneously inserting multiple crimp pins into several plated through holes (PTHs) (e.g., hole 162) in board 140. For example, Figure 2B A set of multiple crimp pins (e.g., crimp pin 170) in housing 175 is shown, which can be simultaneously inserted into several plated through holes (PTHs) (e.g., holes 162) in board 140. In an example implementation, housing 175 can be made of plastic (e.g., plastic 177).

[0034] Figure 3 An example method 300 for assembling a power module having press-fit pins as external signal or power leads is shown. Method 300A includes forming an assembly of a power module component (310). The assembly of the power module component includes a semiconductor device die, at least one lead frame connected to the semiconductor device die, and a board (substrate) connected to the lead frame. The board (e.g., a PCB) can be made of an elastic material. The board includes a plated through hole (PTH). Method 300 also includes packaging the assembly in a mold body having a molded via (TMV) that is aligned with a portion of the board including the plated through hole (PTH) (320). The PTH is not covered by the molding material, but is exposed to the environment (surrounding environment) in the TMV and can be physically contacted from outside the mold body through the TMV. Method 300 also includes crimping the press-fit pin in the PTH through the TMV (330). The press-fit pins (made of metal or metal alloy) are electrically connected to the lead frame by press-fitting and may form external signal or power leads of the power module.

[0035] Figure 4 An example method 400 for assembling a power module having press-fit pins as external signal or power leads is shown.

[0036] Method 400 includes placing a semiconductor power device on a first adhesive layer on a substrate (410), and placing the substrate with the semiconductor power device thereon on a fixture (e.g., a soldering fixture) (420). The power semiconductor power device may be, for example, an IGBT or MOSFET device. The substrate may be, for example, a direct bond copper (DBC) substrate, a direct bond metal (DBM) substrate, an active metal brazing (AMB) substrate, an insulated metal substrate (IMS), or a ceramic substrate, etc. The first adhesive layer may be, for example, a solder material (e.g., a solder preform, a solder paste, etc.).

[0037] The method 300 also includes disposing a first lead frame on a second adhesive layer on a substrate having a semiconductor power device disposed on a fixture (430), and disposing a second lead frame on the fixture (440). The second lead frame may include a cutout or opening through the second lead frame. The method 300 also includes disposing a board (e.g., a PCB substrate) on a third adhesive layer on the second lead frame (450). The board has a through hole (e.g., a plated through hole (PTH)) therein. The board may have a metal layer deposited on the top and bottom surfaces and on the sidewalls of the through hole in the board. The board may be disposed on the second lead frame, wherein the through hole is aligned with the cutout or opening in the second lead frame located below the board.

[0038] The method 400 may also include applying heat to the assembly on the fixture to reflow solder in the first adhesive layer, the second adhesive layer, and the third adhesive layer (460). Reflowing the solder may bond the semiconductor device die to the substrate; bonding the first lead frame to the substrate, and connecting the board to the second lead frame through the first lead frame. The method may also include wire bonding the semiconductor device die to the substrate and the second lead frame.

[0039] Method 400 may also include removing the component from the fixture and placing the component into a mold cavity for packaging (470). The mold cavity may be shaped to encapsulate the component in a mold body having a molded through hole (TMV). A portion of the board including a plated through hole (e.g., a PTH) is aligned with the TMV so that the PTH can be contacted through the TMV (after the mold body is removed from the mold cavity). Method 400 includes, after encapsulating the component in the mold body having a molded through hole (TMV), crimping a press-fit pin into a plated through hole (PTH) in the board through the TMV (480). As an example, the press-fit pin may include a shaft having a first end. When the first end is inserted into the plated through hole (e.g., PTH), the first end may have a size for crimping (e.g., friction or interference fit). The press-fit pin is electrically connected to a semiconductor power device in a power module by crimping, and may form a signal lead or a power lead of the power module.

[0040] In an example embodiment, the press-fit pin may have a second end (distal end) on the shaft of the press-fit pin, the second end opposite the first end inserted into the plated through hole. The second end may be coupled to a substrate (e.g., PCB) of a host electronic application (e.g., automotive application) powered by a power module, for example.

[0041] FIG. 5A to FIG. 5G A power module (eg, power module 100 ) having crimped signal or power leads is schematically illustrated at different stages of construction or after different steps of a method 400 for manufacturing a power module. FIG. 5A to FIG. 5GCross-sectional views of an optical sensor package at different stages of construction are shown.

[0042] Figure 5A An example semiconductor device die 110 is shown disposed on a substrate 112 (e.g., a DBM substrate) in a first stage of construction. The semiconductor device die 110 can be placed on an adhesive layer (e.g., a first adhesive layer 114) (e.g., a solder preform or solder paste, etc.) disposed on the substrate 112.

[0043] Figure 5B The substrate 112 with the semiconductor device die disposed thereon, the lead frame (e.g., lead frame 120, lead frame 130), and the board 140 having at least one plated through hole (PTH) (e.g., hole 162) therethrough are shown placed on a fixture 210 (e.g., a soldering fixture) in a second stage of construction. The lead frame 120 may be placed on an adhesive layer (e.g., second adhesive layer 114) (e.g., solder) on the substrate 112. The board 140 may include at least one plated through hole (e.g., hole 162). The board 140 may also include a metal layer (e.g., metal layer 142, metal layer 144) disposed on the top surface tb and the bottom surface bb of the board 140, and a metal layer 146 disposed on the sidewalls (e.g., sidewalls sw) of the hole 162. The bottom surface metal layer (eg, metal layer 144 ) of board 140 is placed on an adhesive layer (eg, layer 114 ) (eg, solder preform or solder paste, etc.) disposed on lead frame 130 .

[0044] Figure 5C It is shown that in the third stage of construction, heat (heat 230) can be applied to the assembly for solder reflow of various adhesive layers (e.g., a first adhesive layer 114 located between the semiconductor device die 110 and the substrate 112, a second adhesive layer 114 located between the substrate 112 and the lead frame 120, and a third adhesive layer 114 located between the lead frame 130 and the board 140).

[0045] Additionally, wire bonds (wire bonds 116) may be made to connect semiconductor device die 110 to substrate 112 and lead frame 130. In the fourth stage of construction, as shown in FIG. Figure 5D As shown in , a fixture 210 (e.g., a welding fixture) can be removed to release an assembly (e.g., an unmolded assembly 250) that includes a semiconductor device die 110 attached (welded) to a substrate 112, a substrate 112 attached (welded) to a lead frame 120, and a plate 140 attached (welded) to a lead frame 130.

[0046] In the fifth stage of construction, the unmolded component 250 is placed in a molding cavity (e.g., molding cavity 240). Figure 5EAs shown, mold cavity 240 may, for example, have a clamshell shape including a cavity top shape 242 and a cavity bottom shape 244 to enclose a portion of unmolded component 250. Mold cavity 240 may have a shape that forms a mold body (e.g., mold body 150) including molded vias (e.g., TMV 160) aligned with at least one plated through hole (e.g., hole 162) in board 40 and opening 132 in lead frame 130.

[0047] Fig. 5F An unmolded component 250 is shown positioned and encapsulated in mold body 150 within mold cavity 240 .

[0048] In the sixth stage of construction, Figure 5G As shown, the molded assembly (e.g., the power module 100 encapsulated in the mold body 150) can be removed from the mold cavity 240. The power module 100 encapsulated in the mold body 150 includes a press-fit pin coupler 145 / plate 140 having a PTH (e.g., hole 162) suitable for receiving a press-fit pin for a signal or power lead. Figure 5G As shown, for example, crimp pins 170 may be inserted into holes 162 of board 140 to form signal leads or power leads of power module 100 .

[0049] In some example implementations, the pins may be disposed in the TMV and attached to a portion of a substrate lead frame in the TMV using one of solder, adhesive, or interference fit. Figure 5H An example pin 180 is shown disposed in the TMV 160 and connected to the substrate lead frame (through the board 140) to form a signal lead or power lead of the power module 100. The pin 180 may not be a press-fit pin. The pin 180 may be attached to the board 140, for example, using an adhesive or solder (e.g., solder 182) or by an interference fit in the hole 162.

[0050] In an example implementation, the power module 100 having press-fit pins (eg, pins 170 ) may be coupled to an external substrate (eg, a printed circuit board (PCB) of a host power electronics circuit). Figure 6 The power module 100 is schematically illustrated attached to an external substrate (e.g., PCB 610). In the power module 100, a first end (e.g., first end 172) of a press-fit pin 170 is coupled to the power module in a press-fit pin coupler 145. A second end (e.g., second end 174) of the press-fit pin 170 may be press-fitted in a socket (not shown) or a plated through hole (not shown), or soldered to a trace (not shown) in the PCB 610.

[0051] It should also be understood that for the purpose of this disclosure, when an element such as a layer, a zone or a substrate is mentioned on another element, is arranged on another element, is arranged in another element, is connected to another element, is electrically connected to another element, is coupled to another element, or is electrically coupled to another element, the element may be directly on another element, connected to another element, or is coupled to another element, or one or more intermediate elements may be present. On the contrary, when an element is mentioned to be directly on another element or layer, directly arranged on another element or layer, directly arranged in another element or layer, directly connected to another element or layer, or directly coupled to another element or layer, there is no intermediate element or layer. Although the term may not be used in the entire specific embodiment directly on ..., directly in ..., directly connected to ..., or directly connected to ..., the element shown as being directly located on an element, directly connected or directly connected can be mentioned in this manner. The claims of the present application may be revised to narrate the exemplary relationship described in the specification or shown in the drawings.

[0052] As used in this specification, the singular may include the plural unless the context indicates otherwise. Spatially relative terms (e.g., above, above, above, below, below, below, below, etc.) are intended to cover different orientations of the device in use or operation, in addition to the orientations shown in the drawings. In some implementations, the relative terms above and below may include vertically above and vertically below, respectively. In some implementations, the term adjacent may include laterally adjacent to, vertically adjacent to, or horizontally adjacent to.

[0053] Some implementations may be implemented using various semiconductor processing and / or packaging technologies. Some implementations may be implemented using various types of semiconductor processing technologies associated with semiconductor substrates, including but not limited to, for example, silicon (Si), gallium arsenide (GaAs), gallium nitride (GaN), silicon carbide (SiC), etc.

[0054] Although certain features of various example implementations have been illustrated as described herein, those skilled in the art will now expect many modifications, alternatives, variations, and equivalents. Therefore, it should be understood that the appended claims are intended to cover all such modifications and variations that fall within the scope of the implementation. It should be understood that these modifications and variations are presented only by way of example and not limitation, and various changes in form and detail may be made. In addition to mutually exclusive combinations, any part of the apparatus and / or method described herein may be combined in any combination. The implementations described herein may include various combinations and / or sub-combinations of the functions, components, and / or features of the different implementations described.

Claims

1. A module (100), comprising: An assembly comprising a semiconductor device die (110), a lead frame (120, 130) connected to the semiconductor device die, and a substrate (112) connected to the lead frame, the substrate comprising at least one plated through hole (PTH) (162); and A mold body (150) encapsulates the component, the mold body comprising a molded via TMV (160) aligned with a portion of the substrate comprising the at least one PTH, the PTH being exposed to an environment outside the mold body in the TMV and physically contactable from outside the mold body through the TMV.

2. The module according to claim 1, further comprising: A pin, an end of which is crimped into the at least one PTH outside the mold body through the TMV. The module according to claim 2 , wherein the end of the pin has an eye-of-needle structure. 4 . The module of claim 2 , wherein the end is a first end of the pin, and wherein a second end of the pin is coupled to an external substrate. The module according to claim 1 , wherein the substrate is a printed circuit board (PCB). 6 . The module of claim 1 , wherein the semiconductor device die comprises at least one of an insulated gate bipolar transistor (IGBT) and a metal oxide semiconductor field effect transistor (MOSFET). 7 . The module of claim 1 , wherein the semiconductor device die is disposed on a direct bond metal (DBM) substrate, and wherein the assembly comprises wire bonds between the semiconductor device die and the DBM substrate.

8. The module of claim 1 wherein the assembly comprises wire bonds between the semiconductor device die and the lead frame.

9. The module according to claim 1, wherein the mold body encapsulating the components is made of epoxy molding compound (EMC).

10. The module according to claim 1, further comprising: A pin is disposed in the TMV and attached to the lead frame in the TMV using one of solder, adhesive, or an interference fit.

11. A module (100), comprising: A power device (110), wherein the power device is packaged in a mold body (150); and A press-fit pin coupler (145) is disposed outside the mold body and is electrically connected to the power device encapsulated in the mold body.

12. The module according to claim 11, further comprising: A pin is coupled to the crimp pin coupler outside the mold body.

13. The module according to claim 12, wherein the press-fit pin coupler comprises a substrate having a plated through hole PTH, a portion of the substrate including the PTH being arranged outside the mold body in a molded through hole TMV in the mold body, and the PTH can be physically contacted from outside the mold body through the TMV.

14. The module according to claim 13, further comprising: The pins are crimped into the PTH, and the ends of the pins have a needle eye structure.

15. The module according to claim 14, wherein the pins crimped in the PTH are double-sided crimped pins. 16 . The module of claim 11 , wherein the power device comprises at least one of an insulated gate bipolar transistor (IGBT) and a metal oxide semiconductor field effect transistor (MOSFET).

17. A method comprising: forming an assembly comprising a semiconductor device die, at least a lead frame connected to the semiconductor device die, and a substrate connected to the lead frame, the substrate comprising at least one plated through hole (PTH) (310); and The assembly is packaged in a mold body having a molded via TMV aligned with a portion of the substrate including the at least one plated through hole PTH, the PTH being exposed to an environment outside the mold body in the TMV and physically contactable from outside the mold body through the TMV (320).

18. The method according to claim 17, further comprising: The end of the pin is crimped into the at least one PTH through the TMV (330).

19. The method of claim 18, wherein the end of the pin is a first end of the pin, the method further comprising: The second end of the pin is coupled to an external substrate.

20. The method of claim 17, wherein the substrate is a printed circuit board (PCB).

21. The method of claim 17, wherein the semiconductor device die comprises at least one of an insulated gate bipolar transistor (IGBT) and a metal oxide semiconductor field effect transistor (MOSFET).

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