Process chamber of semiconductor equipment

Abstract

The invention provides a process chamber of semiconductor equipment. The process chamber comprises a process chamber body, a base, a protective lining and a grounding device, the base is arranged in the process cavity in a liftable mode and used for supporting a wafer, the protective lining is arranged around the inner side wall of the process cavity and used for protecting the inner side wall of the process cavity, the grounding device comprises a first connecting piece, a second connecting piece and a connecting spring, the first connecting piece is connected with the base, the second connecting piece is connected with the first connecting piece through the connecting spring, and the second connecting piece is connected with the second connecting piece through the connecting spring. The second connecting piece can be attached to the protective lining so as to be electrically connected with the base and the protective lining. The first connecting piece is electrically connected with the base, and when the base ascends to a machining position, the connecting spring supports the second connecting piece to be attached to the protective lining, so that electric connection of the base and the protective lining is achieved, the base and the protective lining are located at the same potential, and arc sparking between the base and the protective lining is avoided. The connecting spring cannot be damaged after multiple times of telescoping, and the service life of the grounding device is prolonged.

Description

Technical Field

[0001] The present application relates to the field of semiconductor manufacturing, and in particular, to a process chamber of a semiconductor device. Background Art

[0002] In this field, the HKMG (High-k Mental Gate) process is widely used in the production of very large-scale integrated circuits. When preparing metal gates, the HKMG process has a larger depth-to-width ratio of metal film filling holes and a higher step coverage requirement, which is often above 60%. If the CVD (Chemical Vapor Deposition) process is selected to form the metal layer and the metal part of the gate stack structure is formed, the residual particles from the organic metal precursor may contaminate the dielectric layer below and affect the dielectric properties of the gate dielectric layer. However, the traditional DC (Direct Current) power PVD (Physical Vapor Deposition) technology has a low plasma ionization rate and a low step coverage, and often cannot meet the process requirements.

[0003] At present, the PVD technology that simultaneously couples RF (Radio Frequency) and DC is mainly used to deposit metal films for metal gates. After the introduction of RF, a higher plasma ionization rate can be achieved, a higher step coverage can be achieved, and the process requirements can be met. However, after the introduction of RF power, the plasma uniformity will be affected, and the chamber will have higher requirements for RF shielding and RF current distribution. During the process, RF is very likely to produce arcs in the chamber, affecting the performance of the deposited film layer, generating particles and / or affecting the uniformity of the process. This greatly increases the safety risks and manufacturing costs of the process, and also poses great challenges to the stability of the device.

[0004] Therefore, how to prevent radio frequency from causing arcing in a process chamber of a semiconductor device is a technical problem that those skilled in the art need to solve urgently. Summary of the invention

[0005] The present application aims to solve at least one of the technical problems existing in the prior art, and proposes a process chamber of a semiconductor device, wherein the base is electrically connected to a protective liner through a grounding device, thereby preventing arc ignition from occurring in the process chamber.

[0006] In order to achieve the purpose of the present application, a process chamber of a semiconductor device is provided, comprising a process chamber, a base, a protective liner and a grounding device; wherein:

[0007] The base is liftably disposed in the process chamber and is used to support the wafer;

[0008] The protective lining is arranged around the inner wall of the process chamber to protect the inner wall of the process chamber;

[0009] The grounding device includes a first connecting member, a second connecting member and a connecting spring. The first connecting member is connected to the base. The second connecting member is connected to the first connecting member through the connecting spring. The second connecting member can be fitted with the protective lining when the base rises to the processing position to electrically connect the base and the protective lining.

[0010] In some embodiments, the connecting spring sleeve is arranged around the axis of the base, the first connecting member and the second connecting member are both annular, and are respectively connected to the two ends of the connecting spring, the outer diameter of the second connecting member is larger than the inner diameter of the protective lining, and the upper surface of the second connecting member is used to fit with the protective lining.

[0011] In some embodiments, the first connecting member is arranged around the axis of the base, and the first connecting member includes a first connecting ring, a second connecting ring and a third connecting ring which are arranged coaxially, the first connecting ring and the third connecting ring are respectively located at two ends of the second connecting ring, and the first connecting ring is used to connect with the base;

[0012] The second connecting piece is block-shaped, and the connecting spring is arranged along the radial direction of the third connecting ring. One end of the connecting spring is fixedly connected to the outer edge of the third connecting ring, and the other end is fixedly connected to the second connecting piece. The connecting spring can support the second connecting piece to fit with the protective lining surface.

[0013] In some embodiments, there are multiple connecting springs, which are evenly distributed along the circumference of the third connecting ring. The number of the second connecting members is equal to the number of the connecting springs, and they are connected to the connecting springs one by one.

[0014] In some embodiments, the first connecting member also includes a fixing member, which is in a sheet shape and is arranged perpendicular to the third connecting ring. One side surface of the fixing member is fixedly connected to the outer edge of the third connecting ring, and the connecting spring is fixedly connected to the surface of the fixing member away from the third connecting ring.

[0015] In some embodiments, the first connecting member is arranged around the axis of the base, and the first connecting member includes a first connecting ring, a second connecting ring and a third connecting ring which are arranged coaxially, the first connecting ring and the third connecting ring are respectively located at two ends of the second connecting ring, and the first connecting ring is used to connect with the base;

[0016] The third connecting ring is located below the protective lining, the outer diameter of the third connecting ring is larger than the inner diameter of the protective lining, the connecting spring is vertically arranged on the upper surface of the third connecting ring, and the second connecting member is arranged on the upper end of the connecting spring.

[0017] In some embodiments, the second connecting member is block-shaped, the number of the second connecting members is equal to the number of the connecting springs, and both are multiple, the connecting springs are distributed along the positive projection of the protective lining on the upper surface of the third connecting ring, and the second connecting members are fixed one-to-one at the upper ends of the connecting springs for fitting with the protective lining.

[0018] In some embodiments, the second connecting member is annular and is arranged around the axis of the base. There are multiple connecting springs, and the connecting springs are distributed along the positive projection of the protective lining on the upper surface of the third connecting ring. The second connecting member is fixedly connected to the upper end of each connecting spring for fitting with the protective lining.

[0019] In some embodiments, a lifting shaft and a bellows assembly are also included, wherein:

[0020] The lifting shaft is inserted into the lifting hole on the bottom surface of the process chamber, and the upper end of the lifting shaft is connected to the base to drive the base to rise and fall;

[0021] The bellows assembly includes a first mounting plate, a second mounting plate and a bellows, the bellows is sleeved on the outer circumference of the lifting shaft, the first mounting plate and the second mounting plate are respectively located at two ends of the bellows, the first mounting plate is sealed and connected to the base, the second mounting plate is arranged around the lifting hole and is sealed and connected to the bottom surface of the process chamber, and the first connecting piece is fixedly connected to the first mounting plate.

[0022] In some embodiments, the protective lining is cylindrical, and its lower end has a folded portion that is folded upward, and the inner surface of the folded portion and the lower end surface of the protective lining form a fitting surface for achieving electrical connection with the second connector through fitting.

[0023] This application has the following beneficial effects:

[0024] The process chamber of the semiconductor equipment provided in the present application includes a process chamber, a base, a protective lining and a grounding device; the process chamber is grounded, the base is liftably arranged in the process chamber, and is used to support a wafer, the protective lining is arranged around the inner wall of the process chamber and is electrically connected to the process chamber, and is used to protect the inner wall of the process chamber, the grounding device includes a first connecting member, a second connecting member and a connecting spring, the first connecting member is connected to the base, the second connecting member is connected to the first connecting member through the connecting spring, and the second connecting member can be fitted with the protective lining when the base rises to the processing position to electrically connect the base and the protective lining.

[0025] The first connecting piece is electrically connected to the base, and when the base rises to the processing position, the connecting spring supports the second connecting piece to fit the protective lining, thereby realizing the electrical connection between the base and the protective lining, making the two at the same potential, and avoiding arcing between the two. In addition, the connecting spring can be stretched and retracted multiple times without being damaged, thereby extending the service life of the grounding device. BRIEF DESCRIPTION OF THE DRAWINGS

[0026] Figure 1 A schematic diagram of the structure of a semiconductor process equipment provided for a specific implementation of the present application;

[0027] Figure 2 for Figure 1 Schematic diagram of the structure of the middle grounding device cooperating with the protective lining when the middle grounding device is not working;

[0028] Figure 3 for Figure 1 Schematic diagram of the structure of the middle grounding device cooperating with the protective lining when working;

[0029] Figure 4 for Figure 2 Schematic diagram of the structure of the grounding device;

[0030] Figure 5 This is a structural schematic diagram of another specific implementation of the present application when the grounding device is not working and cooperates with the protective lining;

[0031] Figure 6 for Figure 5 Schematic diagram of the structure of the middle grounding device cooperating with the protective lining when working;

[0032] Figure 7 This is a structural schematic diagram of the grounding device in another specific implementation manner of the present application when the grounding device is not working and cooperates with the protective lining;

[0033] Figure 8 for Figure 7 Schematic diagram of the structure of the middle grounding device cooperating with the protective lining when working.

[0034] in, Figures 1 to 8 The reference numerals in the drawings are:

[0035] Target 10, wafer 20, upper electrode mechanism 100, RF power supply 101, first RF matching device 102, DC power supply 103, upper electrode metal shell 104, metal sleeve 105, target back plate 106, magnetron mounting plate 107, magnet 108, rotating shaft 109, ceramic ring 110, process chamber 200, protection mechanism 300, protection liner 301, cover ring 302, deposition ring 303, base 400, support 401, cooling plate 402, bellows assembly 500, first mounting plate 501, bellows Tube 502, second mounting plate 503, lifting shaft 600, second RF matcher 700, grounding device 800, first connecting part 810, first connecting ring 811a, 811b, 811c, connecting holes 812a, 812b, 812c, second connecting ring 813a, 813b, third connecting ring 814a, 814b, fixing part 815, connecting spring 820, 820a, 820b, 820c, second connecting part 830, grounding ring 831, hemispherical metal part 832, connecting metal part 833. DETAILED DESCRIPTION

[0036] In order to enable those skilled in the art to better understand the technical solution of the present application, the process chamber of the semiconductor equipment provided by the present application is described in detail below with reference to the accompanying drawings.

[0037] The process chamber of the semiconductor device provided in the present application includes an upper electrode mechanism 100, a process chamber 200, a base 400, a protection mechanism 300 and a grounding device 800. Figure 1 As shown, the upper electrode mechanism 100 is arranged above the process chamber 200, and the target material 10 is installed on the lower side of the upper electrode mechanism 100 and faces the inside of the process chamber 200. The base 400 is located in the process chamber 200 and below the target material 10, and the wafer 20 to be processed is placed on the base 400. The upper electrode mechanism 100 provides the target material 10 with the energy required for sputtering, and the target material 10 is sputtered and deposited on the wafer 20 to form a deposited film. The protective mechanism 300 includes a protective liner 301, which is arranged around the inner wall of the process chamber 200. The protective liner 301 can block the material sputtered by the target material 10 and prevent it from falling on the inner wall of the process chamber 200.

[0038] like Figure 1As shown, the upper electrode mechanism 100 includes an RF power supply 101, a DC power supply 103, a magnetron module, an upper electrode metal shell 104 and a target back plate 106. Among them, the upper electrode metal shell 104 opens downward, the target back plate 106 is installed at the opening of the upper electrode metal shell 104, and an upper electrode metal cavity is formed between the upper electrode metal shell 104 and the target back plate 106. The target 10 can be fixed on the lower surface of the target back plate 106 by welding or the like. The magnetron module includes a rotating shaft 109, a magnetron mounting plate 107 and a magnet 108, and the magnetron mounting plate 107 and the magnet 108 are arranged in the upper electrode metal cavity. The magnet 108 is arranged on the lower surface of the magnetron mounting plate 107, the rotating shaft 109 is arranged in the center of the upper surface of the magnetron mounting plate 107, and the rotating shaft 109 passes through the top of the upper electrode metal shell 104. The upper electrode metal shell 104 also has a metal sleeve 105 arranged around the rotating shaft 109, and the RF power supply 101 and the DC power supply 103 are both connected to the metal sleeve 105. The RF current output by the RF power supply 101 passes through the RF matcher, the metal sleeve 105 and the upper electrode metal shell 104 in sequence, and is coupled to the target material 10. The DC power supply 103 passes through the metal sleeve 105 and the upper electrode metal cavity and is coupled to the target material 10. The DC and RF power are coupled to the target material 10 to provide the energy required for sputtering. The magnetron module can use the magnetic field to confine the plasma, enhance the density of the plasma on the surface of the target material 10, maintain the stability of the magnetron sputtering, and then form a deposited film on the surface of the wafer 20.

[0039] The process chamber 200 is a frame that supports the entire process chamber and can be made of materials such as stainless steel or aluminum alloy. A ceramic ring 110 is provided between the upper electrode mechanism 100 and the process chamber, and the ceramic ring 110 can be sealed with the target backing plate 106 through a sealing ring. The ceramic ring 110 can isolate the environment inside and outside the process chamber and maintain the vacuum state in the process chamber 200.

[0040] The pedestal 400 is disposed in the process chamber 200, and a lifting mechanism is provided below the pedestal 400 for promoting the lifting thereof. The pedestal 400 can support the wafer 20, fix the wafer 20 by electrostatic adsorption, and adjust the temperature of the wafer 20 to prevent temperature fluctuations from affecting the process. Figure 1As shown, the base 400 includes a support member 401 and a cooling plate 402. Among them, the support member 401 is located above the cooling plate 402, and is used to support and fix the wafer 20. The support member 401 is usually made of a high thermal conductivity dielectric material, such as pyrolytic boron nitride, aluminum nitride, aluminum oxide or an equivalent material. The cooling plate 402 is mainly used to adjust the temperature, and it is generally made of a metal material such as stainless steel or aluminum. Before the process, the base 400 drives the wafer 20 to rise to the process position, and the target material 10 is sputtered on the upper surface of the wafer 20 to form a deposited film. The deposited wafer 20 can be used to produce chips and other devices. After the process is completed, the base 400 drives the wafer 20 to descend to the loading and unloading position, which is convenient for taking out the processed wafer 20 and loading the processed wafer 20.

[0041] The process chamber is fed with RF power by an electrode mechanism, and the process chamber 200 and the lifting mechanism are both grounded. The RF current will pass through the plasma in the chamber, with one part flowing to the ground through the side wall of the process chamber 200, and the other part flowing to the ground through the base 400 and the lifting mechanism. Due to the difference in the paths, the two parts of the RF current pass through different components during the transmission process, and there will be a potential difference between the components, which may cause arc ignition in the chamber. The grounding device 800 is used to electrically connect the protective liner 301 and the base 400 so that the two are at the same potential, thereby avoiding arc ignition between the two.

[0042] The grounding device 800 includes a first connector 810, a second connector 830 and a connecting spring 820, all of which are conductors. Specifically, the three can be made of metal materials with good conductivity, such as copper, aluminum and stainless steel, and the surface can be silver-plated to enhance conductivity. Among them, the first connector 810 is connected to the base 400 and is electrically conductive with the base 400. The second connector 830 can be located below the first connector 810 and connected to the first connector 810 through the connecting spring 820. The connecting spring 820 bears the gravity of the second connector 830. The grounding device 800 can be raised and lowered with the base 400. When the base 400 rises to the processing position, the second connector 830 fits the protective lining 301, and the two are electrically conductive. The base 400 is electrically connected to the protective lining 301 through the grounding device 800 , so that the base 400 and the protective lining 301 are at the same potential, thereby avoiding arcing between the base 400 and the protective lining 301 .

[0043] In this embodiment, during the process, the grounding device 800 electrically connects the base 400 and the protective liner 301. A portion of the RF current flows to the ground through the protective liner 301 and the side wall of the process chamber, and the other portion flows to the ground through the base 400 and the lifting mechanism. Since the base 400 and the protective liner 301 are electrically connected, the two are at the same potential when the RF current passes through, which avoids arcing between the base 400 and the protective liner 301 due to the potential difference, thereby improving the safety of the process. In addition, the connecting spring 820 can be stretched and retracted multiple times without being damaged, thereby extending the service life of the grounding device 800.

[0044] In some embodiments, the protective lining 301 is cylindrical, and its lower end has a folded portion that is folded upward. The inner surface of the folded portion and the lower end surface of the protective lining 301 form a fitting surface for achieving electrical connection with the second connector 830 through fitting.

[0045] The protection mechanism 300 further includes a deposition ring 303 and a cover ring 302. The deposition ring 303 is arranged around the support member 401 of the base 400, and the cover ring 302 surrounds the outer circumference of the deposition ring 303. The cover ring 302 generally at least partially covers a portion of the deposition ring 303. During the process, the deposition ring 303 and the cover ring 302 cooperate with each other to reduce the deposition of sputtered deposits around the wafer 20, and reduce the destructive effects of sputtered deposits on the edge of the base 400 and the back of the wafer 20. The deposition ring 303 is generally made of a dielectric material resistant to plasma sputtering, such as a ceramic material alumina. The cover ring 302 is generally made of a material resistant to plasma sputtering, such as a metal material stainless steel, titanium, aluminum and a ceramic material alumina. The cover ring 302 is generally located above the folded portion of the protection liner 301.

[0046] In this embodiment, the grounding device 800 is connected to the base 400 through the first mounting plate 501 of the bellows assembly 500, so that the bellows assembly 500 is at the same potential as the protective lining 301 during the process, further reducing the risk of arc ignition in the process chamber.

[0047] Embodiment 1

[0048] like Figure 2 and Figure 4 As shown, the connecting spring 820a sleeve is arranged around the axis of the base 400, the first connecting member 810 is a first connecting ring 811a, and the second connecting member 830 is a grounding ring 831. The first connecting ring 811a and the grounding ring 831 are respectively connected to the two ends of the connecting spring 820a, and the three are coaxially arranged. The connecting spring 820a and the grounding ring 831 are located below the first connecting ring 811a. The outer diameter of the first connecting ring 811a is smaller than the inner diameter of the protective lining 301, the outer diameter of the grounding ring 831 is larger than the inner diameter of the protective lining 301, and the grounding ring 831 is located below the protective lining 301.

[0049] Optionally, the outer diameter of the first connecting ring 811a may be the same as that of the first mounting plate 501, the inner diameter of the first connecting ring 811a is about 0.8 times the outer diameter of the first mounting plate 501, and the thickness of the first connecting ring 811a is about 0.5 cm. The inner diameter of the grounding ring 831 is the same as that of the first connecting ring 811a, the thickness of the grounding ring 831 is about 0.5 cm, and the outer diameter of the grounding ring 831 is about 1.2 to 1.5 times the outer diameter of the base 400. Ensure that when the base 400 rises, the grounding ring 831 maintains good surface contact with the lower edge of the protective lining 301. Of course, the user can also set the size of each component in the grounding device 800 as needed, which is not limited here.

[0050] like Figure 2 As shown, when the base 400 is located at the loading and unloading position, the connecting spring 820a is in a stretched state under the gravity of the grounding ring 831, and at this time, the grounding ring 831 is separated from the lower end of the protective lining 301 by a certain distance. Figure 3 As shown, when the base 400 rises to the processing position, the height of its rise is greater than the distance between the grounding ring 831 and the lower end of the protective lining 301 when it is in the loading and unloading position. Therefore, the rising process of the base 400 needs to overcome the downward pulling force applied by the connecting spring 820a to the first connecting ring 811a. At this time, the connecting spring 820a applies an upward pulling force to the grounding ring 831, so that the upper surface of the grounding ring 831 fits with the protective lining 301, thereby electrically connecting the base 400 and the protective lining 301.

[0051] Optional, such as Figure 4 As shown, the first connecting ring 811a may be provided with a connecting hole 812a penetrating in the axial direction, and the connecting holes 812a are multiple and distributed along the circumference of the first connecting ring 811a. The first connecting ring 811a is connected to the base 400 through the connecting holes 812a.

[0052] In this embodiment, the connection spring 820a of the grounding device 800 is arranged around the axis of the base 400, and the inner diameter and outer diameter of the connection spring 820a are large, so the connection spring 820a has a large rigidity and is not easy to bend, which can reduce the risk of interference between the grounding device 800 and the lifting mechanism, etc. In addition, the second connecting member 830 is a grounding ring 831, and the contact area between the grounding ring 831 and the protective lining 301 is large, which can reduce the connection resistance between the two.

[0053] Embodiment 2

[0054] like Figure 5 and Figure 6As shown, the first connecting member 810 is arranged around the axis of the base 400. The first connecting member 810 includes a first connecting ring 811b, a second connecting ring 813a and a third connecting ring 814a which are arranged coaxially, and the first connecting ring 811b and the third connecting ring 814a are respectively located at both ends of the second connecting ring 813a. The first connecting ring 811b can be provided with a connecting hole 812b which penetrates along the axial direction, and the number of the connecting holes 812b is multiple and distributed along the circumference of the first connecting ring 811b. The first connecting ring 811b is connected to the base 400 through the connecting hole 812b. The second connecting ring 813a and the third connecting ring 814a are both located below the first connecting ring 811b, and the second connecting ring 813a extends along its axial direction, so that the first connecting member 810 is cylindrical as a whole.

[0055] The second connecting member 830 may be specifically a hemispherical metal member, and the connecting spring 820b extends radially outwardly along the third connecting ring 814a. One end of the connecting spring 820b may be fixedly connected to the outer edge of the third connecting ring 814a by welding or the like, and the other end may be fixedly connected to the second connecting member 830 by welding or the like. The distance between the hemispherical metal member 832 and the center of the third connecting ring 814a is greater than the inner diameter of the protective liner 301.

[0056] like Figure 5 As shown, the connecting spring 820b can support the second connecting member 830 to fit the inner side of the protective lining 301. When the base 400 is located at the loading and unloading position, the connecting spring 820b is in a naturally extended state, and the hemispherical metal member 832 is located at the outer periphery of the third connecting ring 814a and is separated from the lower end of the protective lining 301 by a certain distance. Figure 6 As shown, when the base 400 rises to the processing position, the height of its rise is greater than the distance between the hemispherical metal part 832 and the lower end of the protective lining 301 when it is in the loading and unloading position, and during the rising process. When the base 400 is in the processing position, the hemispherical metal part 832 is located on the inner side of the protective lining 301, and the supporting hemispherical metal part 832 of the connecting spring 820b is fitted with the protective lining 301, thereby electrically connecting the base 400 and the protective lining 301. The surface of the side where the hemispherical metal part 832 fits with the protective lining 301 is hemispherical, and the surface can play a guiding role in the process of the hemispherical metal part 832 and the protective lining 301 cooperating. The hemispherical metal part 832 can be made of a metal material with good conductivity, such as copper, aluminum and stainless steel. Of course, the second connecting member 830 can also adopt surfaces of other shapes, such as an ellipsoidal surface, an arc surface, etc., which are not limited here.

[0057] In addition, the hemispherical metal part 832 will rub against the protective lining 301 during the rising and falling process, and the friction between the two will produce particles, which will affect the yield of the wafer 20 processing. The protective structure also has a covering ring 302 and a deposition ring 303, and the covering ring 302 and the deposition ring 303 are located above the grounding device 800. The two can block the particles generated by the friction between the grounding device 800 and the protective lining 301 during the lifting and lowering process, so as to prevent the particles from affecting the process. Of course, in other embodiments, the protective structure can also be provided with a covering ring 302 and a deposition ring 303, which is not limited here.

[0058] Optionally, there are multiple connecting springs 820b, which are evenly distributed along the circumference of the third connecting ring 814a, and the number of hemispherical metal parts 832 is equal to the number of connecting springs 820b, and they are connected one-to-one with the connecting springs 820b. The number of hemispherical metal parts 832 is multiple, which can increase the number of contact points between the grounding device 800 and the protective lining 301 and reduce the connection resistance between the two. Moreover, multiple connecting springs 820b are evenly distributed along the circumference of the third connecting ring 814a, and the resultant force of the thrust of the connecting springs 820b acting on the third connecting ring 814a is small in the radial direction of the third connecting ring 814a, which can reduce the risk of damage to the part where the grounding device 800 is connected to the base 400 due to the thrust of the connecting springs 820b.

[0059] Optionally, the first connecting member 810 further includes a fixing member 815, such as Figure 5 or Figure 6 As shown, the fixing member 815 is in the form of a sheet and is arranged perpendicular to the third connecting ring 814a. One side surface of the fixing member 815 is fixedly connected to the outer edge of the third connecting ring 814a by welding or the like, and the connecting spring 820b is fixedly connected to the surface of the fixing member 815 away from the third connecting ring 814a by welding or the like. The fixing member 815 is perpendicular to the axial direction of the connecting spring 820b connected thereto, and the connecting spring 820b is connected to the outer edge of the third connecting ring 814a through the fixing member 815, which can improve the stability of the connection and reduce the risk of damage at the connection. Of course, the user can also connect the connecting spring 820b to the third connecting ring 814a in other ways as needed, which is not limited here.

[0060] Optionally, a limiting rod may be provided on the side of the fixing member 815 away from the third connecting ring 814a, and the connecting spring 820b is sleeved on the outer periphery of the limiting rod, and the length of the limiting rod is less than the length of the connecting spring 820b when it is in the process position. During the ascending process of the base 400, the friction between the hemispherical metal part 832 and the protective lining 301 will cause the spring to bend downward, and the limiting rod can limit the bending degree of the connecting spring 820b, ensuring that the connecting spring 820b can drive the hemispherical metal part 832 to fit the inner wall of the protective lining 301.

[0061] In this embodiment, the first connecting member 810 is cylindrical, and its upper end is connected to the base 400. The connecting spring 820b is located at the lower end of the first connecting member 810 and extends radially outwardly of the first connecting member 810. When the base 400 rises to the process position, the hemispherical metal member 832 contacts the inner wall of the protective lining 301 to achieve electrical connection between the base 400 and the protective lining 301. The force of the connecting spring 820b is mainly distributed in the radial direction of the first connecting member 810, and the force acting on the axial direction of the first connecting member 810 is relatively small, thereby reducing the load at the connection between the first connecting member 810 and the base 400, and reducing the risk of loosening between the first connecting member 810 and the base 400.

[0062] Embodiment 3

[0063] In some embodiments, Figure 7 and Figure 8 As shown, the first connecting member 810 is arranged around the axis of the base 400. The first connecting member 810 includes a first connecting ring 811c, a second connecting ring 813b and a third connecting ring 814b which are coaxially arranged. The first connecting ring 811c and the third connecting ring 814b are respectively located at both ends of the second connecting ring 813b. The first connecting ring 811c can be provided with a connecting hole 812c which penetrates along the axial direction. The number of the connecting holes 812c is multiple and distributed along the circumference of the first connecting ring 811c. The first connecting ring 811c is connected to the base 400 through the connecting hole 812c. The second connecting ring 813b and the third connecting ring 814b are both located below the first connecting ring 811c. The second connecting ring 813b extends along the axial direction thereof, so that the first connecting member 810 is cylindrical as a whole.

[0064] Optionally, the outer diameter of the third connecting ring 814b is greater than the inner diameter of the protective liner 301, the connecting spring 820c is vertically arranged on the upper surface of the third connecting ring 814b, and the second connecting member 830 is arranged on the upper end of the connecting spring 820c. Figure 7 As shown, when the base 400 is located at the loading and unloading position, the connecting spring 820c is in a compressed state under the gravity of the second connecting member 830, and at this time, the second connecting member 830 is separated from the lower end of the protective lining 301 by a certain distance. Figure 8 As shown, when the base 400 rises to the processing position, the height of its rise is greater than the distance between the second connecting member 830 and the lower end of the protective lining 301 when it is in the loading and unloading position. Therefore, the rising process of the base 400 causes the second connecting member 830 to fit with the lower end of the protective lining 301, and further compresses the connecting spring 820c. At this time, the connecting spring 820c exerts an upward thrust on the second connecting member 830, so that the upper surface of the second connecting member 830 fits with the protective lining 301, thereby electrically connecting the base 400 and the protective lining 301.

[0065] Optionally, the second connecting member 830 is a connecting metal member 833. Specifically, the connecting metal member 833 may be block-shaped, and its upper surface is used to fit with the protective lining 301. The number of second connecting members 830 is equal to the number of connecting springs 820c, and both are multiple. The connecting springs 820c are distributed along the positive projection of the protective lining 301 on the upper surface of the third connecting ring 814b, and the second connecting members 830 are fixed to the upper ends of the connecting springs 820c in a one-to-one correspondence. The number of metal connecting members is multiple, which can increase the number of contact points between the grounding device 800 and the protective lining 301 and reduce the connection resistance between the two. The upper surface of the metal connecting member fits with the protective lining 301, which can increase the contact area between the two and further reduce the connection resistance.

[0066] Optionally, the second connecting member 830 may also be annular and arranged around the axis of the base 400. There are multiple connecting springs 820c, which are distributed along the positive projection of the protective lining 301 on the upper surface of the third connecting ring 814b, and the second connecting member 830 is fixedly connected to the upper end of each connecting spring 820c. Multiple connecting springs 820c are evenly distributed along the circumference of the third connecting ring 814b, which can apply a uniform thrust to the second connecting member 830, so that it is fully in contact with the protective lining 301, thereby reducing the connection resistance.

[0067] In this embodiment, the outer diameter of the third connecting ring 814b is larger than the inner diameter of the protective lining 301, the second connecting member 830 is arranged above the third connecting ring 814b, and the connecting spring 820c supports the second connecting member 830 to contact the protective lining 301. The structure of the grounding device 800 can meet the process requirements of a larger range of travel of the base 400, which is conducive to process development and debugging.

[0068] In some embodiments, the semiconductor process equipment further includes a lifting shaft 600 and a bellows assembly 500. Specifically, a lifting hole is provided at the bottom of the process chamber 200, and the lifting shaft 600 is inserted into the lifting hole to drive the base 400 to rise and fall. A bellows assembly 500 is provided between the base 400 and the bottom surface of the process chamber 200, and the bellows assembly 500 is arranged around the lifting hole and can be extended and retracted with the lifting and falling of the base 400, so that the inside and outside of the process chamber are isolated from each other.

[0069] like Figure 1As shown, the bellows assembly 500 includes a first mounting plate 501, a second mounting plate 503 and a bellows 502. The first mounting plate 501 and the second mounting plate 503 are both annular, and the first mounting plate 501 and the cooling plate of the base 400 can be fixed together by welding. The second mounting plate 503 is arranged around the lifting hole and is sealed and connected to the bottom surface of the process chamber 200. The bellows 502 is located on the first mounting plate 501 and the second mounting plate 503. The bellows 502 expands and contracts with the lifting and lowering of the base 400, and plays a role in isolating the external space of the process chamber.

[0070] Optionally, the lifting shaft 600 is connected to the second RF matcher 700, which can adjust the impedance of the base 400 to the ground, thereby adjusting the bias voltage on the surface of the base 400. The base 400 is electrically connected to the protective liner 301 through the grounding device 800, so that the two are at the same potential to avoid arcing between the two.

[0071] Optionally, the grounding device 800 may be connected to the first mounting plate 501 of the bellows assembly 500, so that the bellows assembly 500 and the shielding ring maintain a consistent potential during the process. Figure 1 As shown, the first connecting ring 811 of the grounding device 800 can be fixed on the lower edge of the first mounting plate 501 by screws, and the installation position is located about 2 cm from the edge of the first mounting plate 501. Of course, the user can also set the position of the first connecting ring 811 as needed, which is not limited here.

[0072] It is to be understood that the above embodiments are merely exemplary embodiments used to illustrate the principles of the present application, but the present application is not limited thereto. For those skilled in the art, various modifications and improvements can be made without departing from the spirit and substance of the present application, and these modifications and improvements are also considered to be within the scope of protection of the present application.

Claims

1. A process chamber of a semiconductor device, characterized in that: It includes a process chamber, a base, a protective lining and a grounding device; wherein, The base is liftably disposed in the process chamber and is used to support the wafer; The protective lining is arranged around the inner wall of the process chamber to protect the inner wall of the process chamber; The grounding device includes a first connecting member, a second connecting member and a connecting spring. The first connecting member is connected to the base. The second connecting member is connected to the first connecting member through the connecting spring. The second connecting member can be fitted with the protective lining when the base rises to the processing position to electrically connect the base and the protective lining.

2. The process chamber according to claim 1, characterized in that: The connecting spring sleeve is arranged around the axis of the base, the first connecting member and the second connecting member are both annular, and are respectively connected to the two ends of the connecting spring, the outer diameter of the second connecting member is larger than the inner diameter of the protective lining, and the upper surface of the second connecting member is used to fit with the protective lining.

3. The process chamber according to claim 1, characterized in that: The first connecting member is arranged around the axis of the base, and comprises a first connecting ring, a second connecting ring and a third connecting ring which are coaxially arranged, the first connecting ring and the third connecting ring are respectively located at two ends of the second connecting ring, and the first connecting ring is used to be connected to the base; The second connecting piece is block-shaped, and the connecting spring is arranged along the radial direction of the third connecting ring. One end of the connecting spring is fixedly connected to the outer edge of the third connecting ring, and the other end is fixedly connected to the second connecting piece. The connecting spring can support the second connecting piece to fit with the protective lining surface.

4. The process chamber according to claim 3, characterized in that: There are multiple connecting springs, which are evenly distributed along the circumference of the third connecting ring. The number of the second connecting members is equal to the number of the connecting springs, and they are connected to the connecting springs in a one-to-one correspondence.

5. The process chamber according to claim 3, characterized in that: The first connecting member also includes a fixing member, which is in the shape of a sheet and is arranged perpendicular to the third connecting ring. One side surface of the fixing member is fixedly connected to the outer edge of the third connecting ring, and the connecting spring is fixedly connected to the surface of the fixing member away from the third connecting ring.

6. The process chamber according to claim 1, characterized in that: The first connecting member is arranged around the axis of the base, and comprises a first connecting ring, a second connecting ring and a third connecting ring which are coaxially arranged, the first connecting ring and the third connecting ring are respectively located at two ends of the second connecting ring, and the first connecting ring is used to be connected to the base; The third connecting ring is located below the protective lining, the outer diameter of the third connecting ring is larger than the inner diameter of the protective lining, the connecting spring is vertically arranged on the upper surface of the third connecting ring, and the second connecting member is arranged on the upper end of the connecting spring.

7. The process chamber according to claim 6, characterized in that: The second connecting member is block-shaped, the number of the second connecting members is equal to the number of the connecting springs, and both are multiple. The connecting springs are distributed along the positive projection of the protective lining on the upper surface of the third connecting ring. The second connecting members are fixed one-to-one at the upper ends of the connecting springs for fitting with the protective lining.

8. The process chamber according to claim 6, characterized in that: The second connecting member is ring-shaped and is arranged around the axis of the base. There are multiple connecting springs, which are distributed along the positive projection of the protective lining on the upper surface of the third connecting ring. The second connecting member is fixedly connected to the upper end of each connecting spring for fitting with the protective lining.

9. The process chamber according to any one of claims 1 to 8, characterized in that: It also includes a lifting shaft and a bellows assembly, wherein: The lifting shaft is inserted into the lifting hole on the bottom surface of the process chamber, and the upper end of the lifting shaft is connected to the base to drive the base to rise and fall; The bellows assembly includes a first mounting plate, a second mounting plate and a bellows, the bellows is sleeved on the outer circumference of the lifting shaft, the first mounting plate and the second mounting plate are respectively located at two ends of the bellows, the first mounting plate is sealed and connected to the base, the second mounting plate is arranged around the lifting hole and is sealed and connected to the bottom surface of the process chamber, and the first connecting piece is fixedly connected to the first mounting plate.

10. The process chamber according to any one of claims 1 to 8, characterized in that: The protective lining is cylindrical, and has a folded portion folded upward at its lower end. The inner surface of the folded portion and the lower end surface of the protective lining form a fitting surface for achieving electrical connection with the second connector through fitting.

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